# Power MOSFET, N Channel, 30 V, 21 A, 3500 µohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2725925/)

**URL**: https://novapart.co/products/IRF8734TRPBF/power-mosfet-n-channel-30-v-21-a-3500-ohm-soic
**SKU**: IRF8734TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3230
**Stock**: 1000+
**Lead Time**: 113 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0029ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 21A |
| Drain Source On State Resistance | 3500µohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725925/)

PD - 96226 

## IRF8734PbF 

## HEXFET Power MOSFET 

## **Applications** 

Synchronous MOSFET for Notebook Processor Power 

Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems 

## **Benefits** 

Very Low RDS(on) at 4.5V VGS Low Gate Charge Fully Characterized Avalanche Voltage and Current 

100% Tested for RG Lead-Free 

## **VDSS RDS(on) max Qg (typ.) 30V 3.5m @VGS = 10V 20nC** 

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## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**<br>~~a~~|**Absolute Maximum Ratings**<br>**Parameter**<br>~~a~~|**Max.**<br>|**Units**<br>|
|---|---|---|---|
|VDS<br>~~a~~|Drain-to-Source Voltage<br>~~aoh~~|30<br>~~oh~~|V<br>~~oh~~|
|VGS<br>~~a~~<br>~~a~~|Gate-to-Source Voltage<br>~~aoh~~<br>~~a~~|± 20<br>~~oh~~<br>~~es~~||
|ID@ TA= 25°C<br><br>~~a~~|Continuous Drain Current,VGS@ 10V<br>~~oh~~<br>~~————~~<br>~~a~~|21<br>~~oh~~<br>~~————~~<br>~~es~~|A<br>~~oh~~<br>~~————~~|
|ID@ TA= 70°C<br>~~a~~|Continuous Drain Current,VGS@ 10V<br>~~————~~<br>~~a~~|17<br>~~————~~<br>~~es~~||
|IDM<br>~~aaNN~~|Pulsed Drain Current<br>~~————~~<br>~~aaNN~~|168<br>~~————~~<br>~~es~~||
|PD@TA= 25°C<br>~~aaNN~~|Power Dissipation<br>~~————~~<br>~~aaNN~~|2.5<br>~~————~~<br>~~es~~|W<br>~~————~~|
|PD@TA= 70°C<br>~~aNN~~|Power Dissipation<br>~~aNN~~|1.6||
|~~NN~~|Linear DeratingFactor<br>~~NN~~<br>~~es~~|0.02<br>~~es~~|W/°C<br>~~es~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~es~~<br>~~ee~~|-55  to + 150<br>~~es~~<br>~~ee~~|°C<br>~~es~~<br>~~ee~~|



## **Thermal Resistance** 

|—|**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJL<br>—|Junction-to-Drain Lead|–––|20|°C/W|
|RθJA<br>—|Junction-to-Ambient|–––|50||



Notes 0) hrough ©) are on page 10 

## _ORDERING INFORMATION:_ 

_See detailed ordering and shipping information on the last page of this data sheet._ 

www.irf.com 

1 

2/12/09 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~a~~|30<br>~~QO~~<br>~~QO~~|–––<br>~~QO~~<br>~~QO~~|–––<br>~~QO~~<br>~~QO~~|V<br>~~QO~~<br>~~QO~~|VGS= 0V, ID= 250µA|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~a~~<br>~~es~~|–––<br>~~QO~~<br>~~es~~<br>~~QO~~<br>~~|~~|0.023<br>~~QO~~<br>~~es~~<br>~~QO~~<br>~~ee~~<br>~~|~~|–––<br>~~QO~~<br>~~es~~<br>~~QO~~<br>~~ee~~|V/°C<br>~~QO~~<br>~~es~~<br>~~QO~~<br>~~ee~~|Reference to 25°C, ID= 1mA<br>~~es~~<br>~~ce~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~QO~~<br>~~ee~~<br>~~|~~|2.9<br>~~es~~<br>~~QO~~<br>~~ee~~<br>~~ee~~<br>~~|~~|3.5<br>~~es~~<br>~~QO~~<br>~~ee~~<br>~~ee~~|mΩ<br>~~es~~<br>~~QO~~<br>~~ee~~<br>~~ee~~|VGS= 10V, ID= 21A<br>~~es~~<br>~~ee~~<br>~~ce~~|
|||–––<br>~~ee~~<br>~~|~~|4.2<br>~~ee~~<br>~~ee~~<br>~~|~~<br>||5.1<br>~~ee~~<br>~~ee~~||VGS= 4.5V, ID= 17A<br>~~ee~~<br>~~ce~~<br>®|
|VGS(th)|Gate Threshold Voltage<br>~~SS~~|1.35<br>~~|~~<br>~~SS~~|1.80<br>~~ee~~<br>~~|~~<br>~~SS~~|2.35<br>~~ee~~|V<br>~~ee~~|VDS= VGS, ID= 50µA<br>~~ce~~<br>~~ee~~|
|∆VGS(th)|Gate Threshold Voltage Coefficient<br>~~a~~|–––<br>~~a~~<br>~~ee~~|-6.5<br>~~a~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~|mV/°C<br>~~a~~<br>||
|IDSS|Drain-to-Source Leakage Current<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~|~~|–––<br>~~ee~~<br>~~ee~~<br>~~|~~<br>~~|~~|1.0<br>~~ee~~<br>~~ee~~|µA<br>~~ee~~<br><br>~~[_E~~|VDS= 24V, VGS= 0V<br>~~ee~~<br>~~ee~~|
|||–––<br>~~ee~~<br>~~ee~~<br>~~|~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~|~~<br>~~|~~<br>~~ee~~|150<br>~~ee~~<br>~~ee~~<br>~~ee~~||VDS= 24V, VGS= 0V, TJ= 125°C<br>~~ee~~<br>~~ee~~<br>~~[_E~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~a]~~|–––<br>~~ee~~<br>~~|~~<br>~~a]~~<br>~~ee~~|–––<br>~~ee~~<br>~~|~~<br>~~|~~<br>~~a]~~<br>~~ee~~<br>~~ee~~|100<br>~~ee ~~<br>~~a]~~<br>~~ee~~|nA<br> <br>~~a]~~<br>~~[_E~~|VGS= 20V<br> ~~ee~~<br>~~a]~~<br>~~[_E~~|
||Gate-to-Source Reverse Leakage<br>~~a]~~|–––<br>~~a]~~<br>~~ee~~|–––<br>~~a]~~<br>~~ee~~<br>~~ee~~|-100<br>~~a]~~<br>~~ee~~||VGS= -20V<br>~~a]~~<br>~~[_E~~|
|gfs|Forward Transconductance<br>~~GO~~|85<br>~~ee~~<br>~~GO~~|–––<br>~~ee~~<br>~~ee~~<br>~~GO~~|–––<br>~~ee~~<br>~~GO~~|S<br>~~[_E~~<br>~~GO~~|VDS= 15V, ID= 17A<br>~~[_E~~<br>~~GO~~|
|Qg|Total Gate Charge<br>~~a~~|–––<br>~~a~~|20<br>~~a~~|30<br>~~a~~|nC|See Figs. 16a &16b<br>VDS= 15V<br>ID= 17A<br>VGS= 4.5V|
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~a~~|–––<br>~~a~~|5.2<br>~~a~~|–––<br>~~a~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~a~~|–––<br>~~a~~|2.3<br>~~a~~|–––<br>~~a~~|||
|Qgd|Gate-to-Drain Charge<br>~~a~~|–––<br>~~a~~|6.9<br>~~a~~|–––<br>~~a~~|||
|Qgodr|Gate Charge Overdrive<br>~~a~~|–––<br>~~a~~|5.4<br>~~a~~|–––<br>~~a~~|||
|Qsw|Switch Charge(Qgs2+ Qgd)<br>~~a~~|–––<br>~~a~~|9.2<br>~~a~~|–––<br>~~a~~|||
|Qoss|Output Charge<br>~~GO~~|–––<br>~~GO~~|15<br>~~GO~~|–––<br>~~GO~~|nC<br>~~GO~~|VDS= 16V, VGS= 0V<br>~~GO~~|
|RG|Gate Resistance<br>~~GO~~|–––<br>~~GO~~|1.7<br>~~GO~~|3.1<br>~~GO~~|Ω<br>~~GO~~|~~GO~~|
|td(on)|Turn-On DelayTime<br>~~a~~|–––<br>~~a~~|13<br>~~a~~|–––<br>~~a~~|ns<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|See Figs. 15a &15b<br>RG= 1.8Ω<br>VDD= 15V, VGS= 4.5V<br>ID= 17A<br>~~a)~~<br>~~a~~<br>~~a~~<br>~~a~~|
|tr|Rise Time<br>~~a~~|–––<br>~~a~~|16<br>~~a~~|–––<br>~~a~~|||
|td(off)|Turn-Off DelayTime<br>~~a~~|–––<br>~~a~~|15<br>~~a~~|–––<br>~~a~~|||
|tf|Fall Time<br>~~a~~|–––<br>~~a~~|8.0<br>~~a~~|–––<br>~~a~~|||
|Ciss|Input Capacitance<br>~~a~~|–––<br>~~a~~|3175<br>~~a~~|–––<br>~~a~~|pF<br>~~a~~<br>~~a~~|ƒ= 1.0MHz<br>VGS= 0V<br>VDS= 15V<br>~~a~~<br>~~a~~|
|Coss|Output Capacitance<br>~~a~~|–––<br>~~a~~<br>~~ee~~|627<br>~~a~~|–––<br>~~a~~|||
|Crss|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|241<br>~~ee~~|–––<br>~~ee~~|||



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1000<br>VGS<br>TOP           10V<br>5.0V<br>100 4.5V<br>3.5V<br>Lr TT 3.0V<br>10 CSe eeS BOTTOM 2.7V2.5V2.3V<br>1<br>S es i lemmas am<br>0.1<br>a ee ee ee eee eee<br>0.01 _= —== == — 2.3V — — ES ee<br>≤60µs PULSE WIDTH<br>0.001 FT===: Tj = 25°C e = ccone<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>Ee ee ee ee ee<br>100<br>p ie<br>T = 150°C<br>J<br>PA<br>10<br>T = 25°C<br>J<br>1<br>ff<br>c a ee ee be ee ee es ee<br>VDS = 15V<br>a) ae<br>≤60µs PULSE WIDTH<br>0.1 |ff 3 _ |<br>1.5 2 2.5 3 3.5 4 4.5<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000<br>VGS<br>TOP           10V<br>5.0V<br>4.5V<br>100 3.5V<br>— — eer —— 3.0V<br>S aan a Z BOTTOM 2.7V2.5V2.3V<br>10<br>e e<br>1 2.3V<br>———SSSnn SSa Seca==Se oo i oooal<br>≤60µs PULSE WIDTH<br>0.1 lllpep Tj = 150°C ill<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>1.8<br>ID = 21A<br>1.6 VGS = 10V<br>1.4 Se ctttHter<br>1.2 E EL ELL<br>1.0<br>e r<br>0.8 I A | LLL EL<br>0.6 TELELLLLEL<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>C  = C<br>|| Crss   = C gd + C<br>= oss   ds  gd e<br>10000<br>C<br>iss<br>1000 Coss<br>e e<br>Crss<br>100 t t<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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14.0<br>ID= 17A<br>12.0<br>VDS= 24V<br>10.0 tt V t DS= 15V<br>8.0<br>6.04.0 L LL AALS<br>2.00.0 VL LIL [ELEL]<br>0 5 10 15 20 25 30 35 40 45 50 55<br> QG,  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

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1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100 100<br>100µsec<br>TJ = 150°C<br>10 10<br>1 m sec<br>TJ = 25°C<br>1 1<br>TA = 25°C 10 m sec<br>VGS = 0V Tj = 150°CSingle Pulse<br>0.1 TF TE 0.1 ni<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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25 2.5<br>T TL] E OE<br>20<br>2.0<br>a P ALE<br>15 P P F PN<br>ID = 50µA<br>1.5<br>O NS B ARRS see<br>10<br>| PP TT<br>1.0<br>C NY TENET<br>5<br>OLEELLEEER<br>0 P Y 0.5 EPE]EELEEEN.EE EEL<br>25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150<br> TA , Ambient Temperature (°C) TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Threshold Voltage Vs. Temperature<br>Ambient Temperature<br>100<br>D = 0.50<br>10 0.20<br>0.10<br>0.05<br>1 0.02<br>0.01 R1 R1 R2 R2 R3 R3 R4R4 Ri (°C/W)    9.66830     0.169346 τi (sec)<br>τJ τ<br>0.1 τJτ1τ1 τ2 τ2 τ3τ3 τ4τ4 τ  16.3087     11.46293 20.7805     1.815389<br>Ci= τi/Ri  3.14828      0.005835<br>Ci i/Ri<br>0.01 SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthja + T A<br>E E E H Ht<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1 , Rectangular Pulse Duration (sec)<br>ID,  Drain Current (A)<br>VGS(th), Gate Threshold Voltage (V)<br>Thermal Response ( Z thJA ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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20 1000<br>ID = 21A 900 P t tT tT ID<br>TOP          1.26A<br>800 A E TT  2.03A<br>15<br>BOTTOM  17A<br>700<br>600<br>10 Veit| } 500 NPR CEeeIN;<br>400<br>\ T = 125°C EE EET<br>J<br>\ 300 V ENEER<br>5<br>200<br>SS EP SP ANESAT TT Tt<br>TJ = 25°C 100<br>0 0 Pt | | tT )Se<br>2 4 6 8 10 25 50 75 100 125 150<br>VGS, Gate -to -Source Voltage  (V) Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>) Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 12.** On-Resistance Vs. Gate Voltage 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>VV IAS - [V][DD]<br>poh 20VVGS<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 14a.** Unclamped Inductive Test Circuit 

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+<br>-<br>≤ 1<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 15a.** Switching Time Test Circuit 

**Fig 13c.** Maximum Avalanche Energy Vs. Drain Current 

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V(BR)DSS<br><— tp —><br>al<br>|<br>/<br>IAS _<br>**----- End of picture text -----**<br>


**Fig 14b.** Unclamped Inductive Waveforms 

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VDS<br>90%<br>| VV<br>10% /\<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


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Fig 15b.   Switching Time Waveforms<br>www.irf.com<br>**----- End of picture text -----**<br>


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Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>0<br>S Vgs(th)<br>201 K<br>Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>


## **Fig 16a.** Gate Charge Test Circuit 

## **Fig 16b.** Gate Charge Waveform 

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Driver Gate Drive<br>P.W.<br>D.U.T + {$$ P.W. Period — — D = —— Period<br>) [©)]    •  Circuit Layout Considerations V ttx GS=10V<br>| — -  •   GroundLow StrayPlane Inductance<br> •   Low Leakage Inductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [1] Current Transformer - ® + Current r Current di/dt AN<br>@ D.U.T. VDS Waveform Diode Recovery<br>‘+ 00 dv/dt \ ny VDD<br>•   Re-Applied<br>Re ) •   dvidtDriver controlledsame type byas ReD.U.T. Vop** + Voltage Body Diode  Forward Drop [_<br>•   Isp controlled by Duty Factor "D" - @) Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


**Fig 17.** 

## for HEXFET ® Power MOSFETs 

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## **SO-8 Package Outline** (Mosfet & Fetky) 

Dimensions are shown in milimeters (inches) 

## SO-8 Part Marking Information 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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## SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)) 

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TERMINAL NUMBER 1<br>oO 6 © |<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br>oo |<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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 330.00<br>(12.992)<br>  MAX.<br>VAY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

www.irf.com 

9 

|**Orderable part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Note**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRF8734PbF|SO-8|Tube/Bulk|**Quantity**<br>95||
|IRF8734TRPbF|SO-8|Tape and Reel|4000||



## **Qualification Information[†]** 

|Qualification level|Consumer††|Consumer††|
|---|---|---|
||(per JEDEC JESD47F†††guidelines)||
|Moisture Sensitivity Level|SO-8|MSL1<br>(per JEDEC J-STD-020D†††)|
|RoHS Compliant|Yes||



- Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability 

- †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ 

- ††† Applicable version of JEDEC standard at the time of product release. 

## **Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.69mH RG = 25Ω, IAS = 16A. Pulse width ≤ 400µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board Rθ is measured at TJ of approximately 90°C. 

Data and specifications subject to change without notice 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 02/2009 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF8734TRPBF/power-mosfet-n-channel-30-v-21-a-3500-ohm-soic)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf8734trpbf/mosfet-n-ch-30v-21a-soic/dp/2725925)
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