# Power MOSFET, N Channel, 30 V, 14 A, 8500 µohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2725924RL/)

**URL**: https://novapart.co/products/IRF8721TRPBF/power-mosfet-n-channel-30-v-14-a-8500-ohm-soic
**SKU**: IRF8721TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2700
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0069ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.35V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (17-Jan-2023) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 14A |
| Drain Source On State Resistance | 8500µohm |
| Gate Source Threshold Voltage Max | 2.35V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725924RL/)

## IRF8721PbF 

## **Applications** 

Control MOSFET of Sync-Buck Converters used for Notebook Processor Power | Control MOSFET for Isolated DC-DC 

Converters in Networking Systems **Benefits** 

Very Low Gate Charge 

Low RDS(on) at 4.5V VGS , Low Gate Impedance Fully Characterized Avalanche Voltage and Current 

20V VGS  Max. Gate Rating Lead-Free 

HEXFET Power MOSFET 

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VDSS RDS(on) max Qg<br>30V 8.5m @VGS = 10V 8.3nC<br>a eea ee<br>A<br>A<br>S 1 8 D<br>S “T] 2 TE 7 D<br>S ml 3 iz 6 D<br>G 4 5 D<br>SO-8<br>Top View<br>**----- End of picture text -----**<br>


## **Description** 

The IRF8721PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package The IRF8721PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for Notebook and Netcom applications. 

|**Absolute Maximum Ratings**<br>**Parameter**<br>**Units**<br>VDS<br>Drain-to-Source Voltage<br>V<br>VGS<br>Gate-to-Source Voltage<br>ID@ TA= 25°C<br>Continuous Drain Current, VGS@ 10V<br>ID@ TA= 70°C<br>Continuous Drain Current, VGS@ 10V<br>A<br>IDM<br>Pulsed Drain Current<br>PD@TA= 25°C<br>Power Dissipation<br>W<br>PD@TA= 70°C<br>Power Dissipation<br>Linear Derating Factor<br>W/°C<br>TJ<br>Operating Junction and<br>°C<br>TSTG<br>Storage Temperature Range<br>-55  to + 150<br>2.5<br>0.02<br>1.6<br>**Max.**<br>14<br>11<br>110<br>± 20<br>30<br>~~a~~<br>~~a ee~~<br>~~a~~<br>~~——~~<br>~~——~~<br>~~i~~<br>~~a~~<br>~~aa~~<br>~~——~~<br>~~eee~~<br>~~a~~<br>~~ee~~<br>~~ee~~|
|---|
|**Thermal Resistance**|
|Notes<br>through  are on page 9<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RθJL<br>Junction-to-Drain Lead<br>–––<br>20<br>°C/W<br>RθJA<br>Junction-to-Ambient<br>–––<br>50<br>~~SC~~<br>~~—~~<br>es|
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**Static @ TJ = 25°C (unless otherwise specified)** 

|~~es~~<br>~~es~~|**Parameter**<br>~~GO~~<br>~~a~~|**Min.**<br>~~GO~~<br>~~GO~~|**Typ.**<br>~~GO~~<br>~~GO QO~~|**Max. **<br>~~GO~~<br>~~QO~~|**Units**<br>~~GO~~<br>~~QO~~|**Conditions**<br>~~GO~~<br>~~QO~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~es~~<br>~~es~~<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~GO~~<br>~~a~~<br>~~es~~|30<br>~~GO~~<br>~~GO~~<br>~~es~~<br>~~rs~~|–––<br>~~GO~~<br>~~GO QO~~<br>~~es~~<br>~~GD~~|–––<br>~~GO~~<br>~~QO~~<br>~~es~~<br>~~GD~~|V<br>~~GO~~<br>~~QO~~<br>~~es~~<br>~~GO~~|VGS= 0V,ID= 250μA<br>~~GO~~<br>~~QO~~<br>~~es~~<br>~~GO~~|
|ΔΒVDSS/ΔTJ<br>~~es~~<br>~~es~~|Breakdown Voltage Temp. Coefficient<br>~~a~~<br>~~es~~|–––<br>~~GO~~<br>~~es~~<br>~~rs~~|0.021<br>~~GO QO~~<br>~~es~~<br>~~GD~~|–––<br>~~QO~~<br>~~es~~<br>~~GD~~|V/°C<br>~~QO~~<br>~~es~~<br>~~GO~~|Reference to 25°C,ID= 1mA<br>~~QO~~<br>~~es~~<br>~~GO~~|
|RDS(on)<br>~~es~~<br>~~EE~~<br>~~**e**e~~<br>~~s~~|Static Drain-to-Source On-Resistance<br>~~es~~<br>~~EE~~<br>~~es~~<br>|–––<br>~~es~~<br>~~rs ~~<br>~~EE~~|6.9<br>~~es~~<br> ~~GD~~<br>~~EE~~|8.5<br>~~es~~<br>~~GD ~~<br>~~EE~~|mΩ<br>~~es~~<br> ~~GO~~<br>~~EE~~<br>|VGS= 10V,ID= 14A<br>~~es~~<br>~~GO~~<br>~~EE~~|
|||–––<br>~~EE~~<br>~~PTT~~<br>~~Od~~<br>|10.6<br>~~EE~~<br>~~PTT~~<br>~~ee~~<br>|12.5<br>~~EE~~<br>~~PTT~~<br>~~ee~~<br>||VGS= 4.5V,ID= 11A<br>~~EE~~|
|VGS(th)<br>~~EE~~<br>~~**e**e~~<br>~~s~~|Gate Threshold Voltage<br>~~EE~~<br>~~es~~<br>|1.35<br>~~EE~~<br>~~PTT~~<br>~~Od~~<br>|–––<br>~~EE~~<br>~~PTT~~<br>~~ee~~<br>|2.35<br>~~EE~~<br>~~PTT~~<br>~~ee~~<br>|V<br>~~EE~~<br>|VDS= VGS, ID= 25μA<br>~~EE~~<br>~~LEE~~<br>|
|ΔVGS(th)<br>~~**e**e~~<br>~~s~~|Gate Threshold Voltage Coefficient<br>~~es~~<br>~~ee~~|–––<br>~~PTT~~<br>~~Od~~<br>~~ee~~<br>~~Pt~~|-6.2<br>~~PTT~~<br>~~ee~~<br>~~ee~~<br>~~Pt~~|–––<br>~~PTT~~<br>~~ee~~<br>~~ee~~<br>~~LEE~~<br>|mV/°C<br>~~ee~~<br>~~LEE~~<br>||
|IDSS<br>~~**e**e~~<br>~~s~~<br>~~EE~~<br>~~————————————~~|Drain-to-Source Leakage Current<br>~~es ~~<br>~~ee~~<br>~~EE~~<br>~~————————————~~|–––<br>~~PTT~~<br> ~~Od ~~<br>~~ee~~<br>~~EE~~<br>~~Pt~~|–––<br>~~PTT~~<br> ~~ee~~<br>~~ee~~<br>~~EE~~<br>~~Pt~~|1.0<br>~~PTT~~<br>~~ee~~<br>~~ee~~<br>~~EE~~<br>~~LEE~~<br>|μA<br>~~ee~~<br>~~EE~~<br>~~LEE~~<br><br>~~————————————~~|VDS= 24V,VGS= 0V<br>~~EE~~<br>~~LEE~~<br>|
|||–––<br>~~EE~~<br>~~Pt~~<br>~~————————————~~|–––<br>~~EE~~<br>~~PtrT~~<br>~~————————————~~|150<br>~~EE~~<br>~~LEE~~<br>~~rT~~<br>~~————————————~~||VDS= 24V,VGS= 0V,TJ= 125°C<br>~~EE~~<br>~~LEE~~<br>~~PO~~<br>~~————————————~~|
|IGSS<br>~~EE~~<br>~~————————————~~<br>~~es~~|Gate-to-Source Forward Leakage<br>~~EE~~<br>~~————————————~~<br>~~ee~~|–––<br>~~EE~~<br>~~Pt~~<br>~~————————————~~<br>~~ee~~|–––<br>~~EE~~<br>~~Pt rT~~<br>~~————————————~~|100<br>~~EE~~<br>~~LEE~~<br>~~rT ~~<br>~~————————————~~|nA<br>~~EE~~<br>~~LEE~~<br> <br>~~————————————~~<br>|VGS= 20V<br>~~EE~~<br>~~LEE~~<br> ~~PO~~<br>~~————————————~~<br>~~Po~~|
||Gate-to-Source Reverse Leakage<br>~~————————————~~<br>~~ee~~<br>~~GO~~|–––<br>~~————————————~~<br>~~ee~~<br>~~GO~~|–––<br>~~————————————~~<br>~~GG~~|-100<br>~~————————————~~<br>~~GG~~||VGS= -20V<br>~~————————————~~<br>~~Po~~<br>|
|gfs<br>~~————————————~~<br>~~es~~<br>~~es~~|Forward Transconductance<br>~~————————————~~<br>~~ee~~<br>~~GO~~|27<br>~~————————————~~<br>~~ee~~<br>~~GO~~|–––<br>~~————————————~~<br>~~GG~~|–––<br>~~————————————~~<br>~~GGC~~|S<br>~~————————————~~<br>~~C~~|VDS= 15V,ID= 11A<br>~~————————————~~<br>~~Po~~<br>~~CO~~|
|Qg<br>~~es~~<br>~~es~~<br>~~es~~|Total Gate Charge<br>~~ee ~~<br>~~GO~~|–––<br> ~~ee~~<br>~~GO ~~|8.3<br> ~~GG~~|12<br>~~GGC~~|nC<br>~~C~~<br>~~es~~<br>~~GO~~|See Fig. 16a and 16b<br>VDS= 15V<br>VGS= 4.5V<br>ID= 11A<br>~~Po~~<br>~~CO~~<br>~~es~~<br>~~GO~~|
|Qgs1<br>~~es~~<br>~~es~~<br>~~es~~|Pre-Vth Gate-to-Source Charge<br>|–––<br>|2.0<br>|–––<br>~~C~~|||
|Qgs2<br>~~es~~<br>~~es~~<br>~~es~~|Post-Vth Gate-to-Source Charge|–––|1.0|–––|||
|Qgd<br>~~es~~<br>~~es~~<br>~~es~~|Gate-to-Drain Charge|–––|3.2|–––|||
|Qgodr<br>~~es~~<br>~~es~~<br>~~es~~|Gate Charge Overdrive|–––|2.0|–––|||
|Qsw<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|Switch Charge(Qgs2+ Qgd)<br>~~es~~<br>|–––<br>~~es~~<br>~~eG~~|4.2<br>~~es~~<br>~~eG~~|–––<br>~~es~~<br>~~eG~~|||
|Qoss<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|Output Charge<br>~~es~~<br>~~a~~|–––<br>~~es~~<br>~~eG~~<br>~~GO~~|5.0<br>~~es~~<br>~~eG~~<br>~~GO~~|–––<br>~~es~~<br>~~eG~~<br>~~GO C~~|nC<br>~~es~~<br>~~GO~~<br>~~C~~|VDS= 16V,VGS= 0V<br>~~es~~<br>~~GO~~<br>~~CO~~|
|RG<br>~~es~~<br>~~es~~<br>~~es~~|Gate Resistance<br>~~es~~<br>~~a~~|–––<br>~~es~~<br>~~eG~~<br>~~GO~~|1.8<br>~~es~~<br>~~eG~~<br>~~GO~~|3.0<br>~~es~~<br>~~eG~~<br>~~GO C~~|Ω<br>~~es~~<br>~~GO~~<br>~~C~~|~~es~~<br>~~GO~~<br>~~CO~~|
|td(on)<br>~~es~~<br>~~es~~<br>~~es~~|Turn-On DelayTime<br>~~a~~|–––<br>~~eG~~<br>~~GO~~|8.2<br>~~eG~~<br>~~GO~~|–––<br>~~eG ~~<br>~~GO C~~|ns<br> ~~GO~~<br>~~C~~|See Fig. 15a<br>VDD= 15V, VGS= 4.5V<br>ID= 11A<br>RG= 1.8Ω<br>~~GO~~<br>~~CO~~|
|tr<br><br>~~es~~<br>~~es~~<br>~~es~~|Rise Time<br>~~a~~|–––<br>~~GO ~~|11<br> ~~GO ~~|–––<br> ~~GO C~~|||
|td(off)<br>~~es~~<br>~~es~~<br>~~es~~|Turn-Off DelayTime|–––|8.1|–––|||
|tf<br>~~es~~<br>~~es~~<br>~~es~~|Fall Time|–––|7.0|–––|||
|Ciss<br>~~es~~<br>~~es~~<br>~~es~~|Input Capacitance|–––|1040|–––|pF|ƒ= 1.0MHz<br>VGS= 0V<br>VDS= 15V|
|Coss<br>~~es~~<br>~~es~~<br>~~es~~|Output Capacitance|–––|229|–––|||
|Crss<br>~~es~~<br>~~es~~|Reverse Transfer Capacitance|–––|114|–––|||



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1000 1000<br>VGS VGS<br>TOP           10V TOP           10V<br>5.0V 5.0V<br>100 4.5V3.5V3.5V 4.5V3.5V<br>3.0V 3.0V<br>2.7V 2.7V<br>gilli 2.5V 100 alii mail 2.5V<br>10 BOTTOM 2.3V BOTTOM 2.3V<br>ott Tn A/T<br>penniillieemesHHHH Ae EH<br>1<br>cm| ST LTH<br>10<br>| Saati DUN<br>0.1 ee ee ee ee eee P| 2.3V ee| tT TT<br>i 2.3V ≤ 60μs PULSE WIDTH 60μs PULSE WIDTH ee ≤ 60μs PULSE WIDTH<br>Tj = 25°C Tj = 150°C<br>0.01 ania | 1 Sain |<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 2.0<br>VDS = 15V ID = 14A<br>≤ 60μs PULSE WIDTH VGS = 10V<br>100 = EL Ly<br>ee P| ee| ny fe  Aor 1.5 HLLy,<br>10<br>ro<br>TJ = 25°C<br>TJ = 150°C<br>1 Se7/see<br>1.0<br>SS 4<br>0.1<br>a a ae<br>a ee<br>0.01<br>pot 7 fe ae<br>0.5<br>1.0 2.0 3.0 4.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>VGS, Gate-to-Source Voltage (V)<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000<br>VGS<br>TOP           10V<br>5.0V<br>100 4.5V3.5V3.5V<br>3.0V<br>2.7V<br>gilli 2.5V<br>10 BOTTOM 2.3V<br>ott Tn<br>penniillieemesHHHH<br>1<br>cm|<br>0.1 ee ee ee ee eee<br>i 2.3V ≤ 60μs PULSE WIDTH 60μs PULSE WIDTH<br>Tj = 25°C<br>ania |<br>0.01<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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10000 16<br>VGS   = 0V,       f = 1 MHZ ID= 11A<br>Ciss   = Cgs + Cgd,  Cds SHORTED VDS= 24V<br>Crss   = Cgd  VDS= 15V<br>| Coss  = Cds + Cgd 12 PR<br>TOLL<br>fo ><br>8<br>1000 TM Ciss | EE<br>en Coss See eel 4 || Wy) |<br>Crss<br>Sa Salil fi<br>0<br>A i s<br>100<br>til l 0 §$AEE 5 10 15 20 25<br>1 10 100<br> Qg,  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100 100<br>100μsec<br>T = 150°C<br>J<br>1 m sec<br>10 10<br>10mse c<br>1 TJ = 25°C 1<br>TA = 25°C<br>Tj = 150°C<br>VGS = 0V Single Pulse<br>0.1 PA Y) 0.1 Le<br>0.2 0.4 0.6 0.8 1.0 0.1 1 10 100<br>VSD,  Source-to-Drain Voltage (V) VDS,  Drain-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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16 2.4<br>2.2<br>12 OT) 2.0 REE<br>awe CRSEEEEE<br>1.8<br>ID = 25μA<br>8 SYNEaN 1.6 P AARPPEE<br>1.4<br>4 NG\ 1.2 PtPET TEENEEE IN<br>1.0<br>0 Ter 0.8 EPET EE TT<br>25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150<br>TA,  Ambient Temperature (°C) TJ, Temperature ( °C )<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Threshold Voltage Vs. Temperature<br>Case Temperature<br>100 See eee emt eee eee eerie eee ete ||| EEGTLLL<br>D = 0.50<br>10 m 0.20 mLN LT | LI<br>0.10<br>a 0.05 eee---:— aa<br>1 0.020.01 τJ τJτ1τ1 R1 R1 τ2Rτ22 R2 Rτ33 R τ3 3 τR4τ4 R 4 4 τa Ri (1.9355957.02154526.61013°C/W) 0.0001480.019345τι 0.81305(sec)<br>0.1 Ci= Ciτi/Rii/Ri 14.43961 26.2<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>Peal Hil phi 2. Peak Tj = P dm x Zthja + Tc  ——<br>0.01<br>Zeenat Bull |<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1,  Rectangular Pulse Duration (sec)<br>VGS(th) Gate threshold Voltage (V)<br>ID  , Drain Current (A)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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16 300<br>ID = 14A<br>14 250<br>aA e e<br>200<br>12 PLN]<br>TJ = 125°C<br>150<br>10 Vrs<br>100<br>8 IN)<br>TJ = 25°C<br>50<br>CoS<br>6<br>0<br>2.0 4.0 6.0 8.0 10.0<br>VGS,  Gate-to-Source Voltage (V)<br>Fig 12.  On-Resistance vs. Gate Voltage<br>15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>20V<br>tp 0.01Ω<br>a h<br>)Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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300<br>                 ID<br>250 TOP          0.83A<br>                1.05A<br>BOTTOM      11A<br>200<br>M e<br>150<br>R R<br>100<br>S SE<br>50<br>B SS<br>0<br>| |PS<br>25 50 75 100 125 150<br>Starting TJ, Junction Temperature (°C)<br>Fig 13.   Maximum Avalanche Energy<br>vs. Drain Current<br>V(BR)DSS<br>tp<br>IAS |<br>**----- End of picture text -----**<br>


**Fig 14a.** Unclamped Inductive Test Circuit 

**Fig 14b.** Unclamped Inductive Waveforms 

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-<br>er |<br>≤ 1<br>≤ 0.1<br>**----- End of picture text -----**<br>


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VDS<br>90%<br>i<br>10%<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 15a.** Switching Time Test Circuit 

**Fig 15b.** Switching Time Waveforms 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2μF<br>.3μF<br>+<br>D.U.T. -VDS<br>VGS<br>3mA<br>WN<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


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Id<br>Vds<br>Vgs<br>Vgs(th)<br>toy<br>——¢—_§_ >  4+—\__ _ _ ?> ><< >4 !<br>Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>


## **Fig 16a.** Gate Charge Test Circuit 

**Fig 16b.** Gate Charge Waveform 

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Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period — — D = —— Period<br>Circuit Layout Considerations V t GS=10V<br>   •<br>cc [®@]  t<br> •<br>| ——| - LowGround Stray Pla I n eductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>- - + Current Current di/dt<br>o Eat ® ®r D.U.T. VDS Waveform Diode Recoverydv/dt NN‘<br>00 = VDD<br>ms<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Rg c c •   dv/dt controlled by Rg Vpp - Inductor Curent<br>•<br>D.U.T. - Device Under Test es ee<br>Isp controlled by Duty Factor "D" ® Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


## **Fig 17.** 

## Recovery dv/dt Test Circuit for N-Channel HEXFET ® Power MOSFETs 

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## **SO-8  Package Outline** 

Dimensions are shown in milimeters (inches) 

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DIM ee INCHE S MIL LIME T E RS<br>D B MIN MAX MIN MAX<br>A ‘Ss 5 a A .0532 .0688 1.35 1.75<br>a A1  ee .0040 .0098 0.10 0.25<br>b .013 .020 0.33 0.51<br>4 8 7 6 5 i [ee] c .0075 .0098 0.19 0.25<br>6 H D .189 .1968 4.80 5.00<br>E<br>1 2 3 4 0.25 [.010]  A a E .1497 .1574 3.80 4.00<br>! a e .050  B AS IC 1.27  B AS IC<br>e 1 .025  B AS IC 0.635  B AS IC<br>| eea H ee .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e +obL ee<br>— a L ee .016 .050 0.40 1.27<br>a y  0°  8°  0°  8°<br>— e1 —_ — K  x 45°<br>A<br>C<br>y<br>0.10 [.004]<br>|. 8X b fo A1 te PAL 8X L 8X c ]<br>0.25 [.010]  C A B 7<br>FOOTPRINT<br>**----- End of picture text -----**<br>


NOTES: 

1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 

2.  CONTROLLING DIMENSION: MILLIMETER 

3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 

4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. 

OC MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 

- 7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 

**==> picture [201 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
8X 0.72 [.028]<br>|<br>6.46 [.255] |<br>_ | 00002— -<br>3X 1.27 [.050]<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## **SO-8 Part Marking Information** 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

rer" XXXX INTERNATIONAL F7101 RECTIFIER LOGO 

DATE CODE (YWW) P =  DISGNATES LEAD - FREE PRODUCT (OPTIONAL) Y =  LAST DIGIT OF THE YEAR WW =  WEEK A =  ASSEMBLY SITE CODE LOT CODE PART NUMBER 

www.irf.com 

8 

## **SO-8 Tape and Reel** 

Dimensions are shown in milimeters (inches) 

**==> picture [174 x 112] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) = — FEED DIRECTION<br>**----- End of picture text -----**<br>


**==> picture [21 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
NOTES:<br>**----- End of picture text -----**<br>


1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

**==> picture [216 x 81] intentionally omitted <==**

**----- Start of picture text -----**<br>
 330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>NOTES :<br>1. CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>


**==> picture [108 x 4] intentionally omitted <==**

**----- Start of picture text -----**<br>
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>**----- End of picture text -----**<br>


Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.09mH, RG = 25Ω, IAS = 11A. Pulse width ≤ 400μs; duty cycle ≤ 2%. 

When mounted on 1 inch square  copper board. Rθ is measured at Ty of approximately 90°C. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2007 

www.irf.com 

9 

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## Links

- [View this product on Novapart](https://novapart.co/products/IRF8721TRPBF/power-mosfet-n-channel-30-v-14-a-8500-ohm-soic)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf8721trpbf/mosfet-n-ch-30v-14a-soic/dp/2725924RL)
---

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