# Power MOSFET, N Channel, 30 V, 11 A, 0.0119 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2725922RL/)

**URL**: https://novapart.co/products/IRF8707TRPBF/power-mosfet-n-channel-30-v-11-a-00119-ohm-soic
**SKU**: IRF8707TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5260
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0093ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 11A |
| Drain Source On State Resistance | 0.0119ohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725922RL/)

## IRF8707PbF 

## **Applications** 

Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC Converters in Networking Systems 

## **Benefits** 

Very Low Gate Charge Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 20V VGS  Max. Gate Rating 100% tested for Rg Lead-Free 

HEXFET Power MOSFET 

|**VDSS**|**RDS(on) max**|**Qg**|
|---|---|---|
|**30V**|**11.9m @VGS = 10V**|**6.2nC**|



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A<br>A<br>S 1 8 D<br>S 2 7 D<br>S 3 6 D<br>G 4 5 D<br>SO-8<br>Top View<br>**----- End of picture text -----**<br>


## **Description** 

The IRF8707PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8707PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications. 

## **Absolute Maximum Ratings** 

||**Parameter**<br>**Max.**|**Units**|
|---|---|---|
|VDS<br>VGS<br>ID@ TA= 25°C<br>ID@ TA= 70°C<br>IDM<br>PD@TA= 25°C<br>PD@TA= 70°C|Drain-to-Source Voltage<br>Gate-to-Source Voltage<br>Continuous Drain Current, VGS@ 10V<br>Continuous Drain Current, VGS@ 10V<br>Pulsed Drain Current<br>Power Dissipation<br>Power Dissipation<br>V<br>A<br>W<br>11<br>9.1<br>88<br>± 20<br>30<br>2.5<br>1.6<br>~~a~~<br>~~i~~<br>~~ee~~<br>~~aGe~~<br>~~ot~~<br>~~a~~<br>~~ee~~||
||Linear Derating Factor<br>0.02|W/°C|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>-55  to + 150|°C|
|**Thermal Resistance**|||
|**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RθJL<br>Junction-to-Drain Lead<br>–––<br>20<br>RθJA<br>Junction-to-Ambient<br>–––<br>50<br>°C/W<br>~~ot~~|||
|Notes<br>through<br>®|through<br>are on page 9<br>©)||
|www.irf.com||1|



1 08/10/07 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~Gs~~|**Typ.**<br>~~sD~~|**Max. **<br>~~sD~~|**Units**<br>~~GO QO~~|**Conditions**<br>~~QO~~|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~en~~|30<br>~~en~~<br>~~Gs~~|–––<br>~~en~~<br>~~sD~~<br>~~DD~~|–––<br>~~en~~<br>~~sD~~<br>~~DD~~|V<br>~~en~~<br>~~GO QO~~<br>~~GO CO~~|VGS= 0V, ID= 250µA<br>~~en~~<br>~~QO~~<br>~~CO~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~en~~<br>~~GO~~|–––<br>~~en~~<br>~~Gs ~~<br>~~GO~~<br>~~|~~|0.022<br>~~en~~<br> ~~sD~~<br>~~GO~~<br>~~DD~~<br>~~|~~|–––<br>~~en~~<br>~~sD ~~<br>~~GO~~<br>~~DD~~|V/°C<br>~~en~~<br> ~~GO QO~~<br>~~GO~~<br>~~GO CO~~|Reference to 25°C, ID= 1mA<br>~~en~~<br>~~QO~~<br>~~GO~~<br>~~CO~~<br>~~—~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~GO~~|–––<br>~~GO~~<br>~~|~~|9.3<br>~~GO~~<br>~~DD~~<br>~~|~~|11.9<br>~~GO~~<br>~~DD ~~|mΩ<br>~~GO~~<br> ~~GO CO~~<br>~~GO GO~~|VGS= 10V, ID= 11A<br>~~GO~~<br>~~CO~~<br>~~—~~|
|||–––<br>~~|~~<br>~~(ss~~|14.2<br>~~|~~<br>~~(ss~~|17.5<br>~~OD~~||VGS= 4.5V, ID= 8.8A<br>~~—~~<br>®<br>~~GO~~|
|VGS(th)<br>~~Pe~~|Gate Threshold Voltage<br>~~Pn~~<br>~~Pe~~|1.35<br>~~|~~<br>~~Pn~~<br>~~(ss~~|1.80<br>~~|~~<br>~~Pn~~<br>~~(ss~~<br>~~DD~~|2.35<br>~~Pn~~<br>~~OD~~<br>~~DD~~|V<br>~~Pn~~<br>~~GO GO~~<br>~~GO CO~~|VDS= VGS, ID= 25µA<br>~~—~~<br>~~Pn~~<br>~~GO~~<br>~~CO~~|
|∆VGS(th)<br>~~Pe~~|Gate Threshold Voltage Coefficient<br>~~Pn~~<br>~~GO~~<br>~~Pe~~|–––<br>~~Pn~~<br>~~(ss~~<br>~~GO~~|-5.8<br>~~Pn~~<br>~~(ss ~~<br>~~GO~~<br>~~DD~~|–––<br>~~Pn~~<br> ~~OD ~~<br>~~GO~~<br>~~DD~~|mV/°C<br>~~Pn~~<br> ~~GO GO~~<br>~~GO~~<br>~~GO CO~~|VDS= VGS, ID= 25µA<br>~~Pn~~<br>~~GO~~<br>~~GO~~<br>~~CO~~|
|IDSS<br>~~Pe~~|Drain-to-Source Leakage Current<br>~~GO~~<br>~~Pe~~|–––<br>~~GO~~|–––<br>~~GO~~<br>~~DD~~|1.0<br>~~GO~~<br>~~DD~~|µA<br>~~GO~~<br>~~GO CO~~|VDS= 24V, VGS= 0V<br>~~GO~~<br>~~CO~~|
|||–––|–––<br>~~DD~~<br>~~PT~~|150<br>~~DD~~<br>~~PT~~||VDS= 24V, VGS= 0V, TJ= 125°C<br>~~CO~~|
|IGSS<br>~~Pe~~<br>~~a~~|Gate-to-Source Forward Leakage<br>~~Pe~~<br>~~A~~|–––<br>~~A~~|–––<br>~~DD~~<br>~~A~~|100<br>~~DD~~<br>~~A~~|nA<br>~~GO CO~~<br>~~A~~<br>~~GO QO~~|VGS= 20V<br>~~CO~~<br>~~A~~|
||Gate-to-Source Reverse Leakage<br>~~A~~<br>~~a~~|–––<br>~~A~~<br>~~a ~~<br>~~Gs~~<br>|–––<br>~~A~~<br> ~~ee~~<br>~~sD~~<br>|-100<br>~~A~~<br>~~ee~~<br>~~sD~~<br>||VGS= -20V<br>~~A~~<br>~~QO~~|
|gfs<br>~~a~~|Forward Transconductance<br>~~en~~<br>~~a~~|25<br>~~en~~<br>~~Gs~~<br>|–––<br>~~en~~<br>~~sD~~<br>|–––<br>~~en~~<br>~~sD~~<br>|S<br>~~en~~<br>~~GO QO~~|VDS= 15V, ID= 8.8A<br>~~en~~<br>~~QO~~|
|Qg<br>~~a~~|Total Gate Charge<br>~~en~~<br>~~a~~|–––<br>~~en~~<br>~~Gs~~<br>|6.2<br>~~en~~<br>~~sD~~<br>|9.3<br>~~en~~<br>~~sD~~<br>|nC<br>~~en~~<br>~~GO QO~~<br>~~GO CO~~|See Figs. 15 & 16<br>ID= 8.8A<br>VGS= 4.5V<br>VDS= 15V<br>~~en~~<br>~~QO~~<br>~~CO~~|
|Qgs1<br>~~a~~|Pre-Vth Gate-to-Source Charge<br>~~aeG~~|–––<br>~~Gs ~~<br>~~eG~~|1.4<br> ~~sD~~<br>~~eG~~|–––<br>~~sD~~<br>~~eG~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~a~~|–––<br>~~a~~|0.7<br>~~a~~|–––<br>~~a~~|||
|Qgd|Gate-to-Drain Charge<br>~~eG~~|–––<br>~~eG~~|2.2<br>~~eG~~|–––<br>~~eG~~|||
|Qgodr|Gate Charge Overdrive<br>~~a~~|–––<br>~~a~~<br>~~ee~~|1.9<br>~~a~~<br>~~es~~|–––<br>~~a~~|||
|Qsw|Switch Charge (Qgs2+ Qgd)<br>~~es~~|–––<br>~~es~~<br>~~ee~~|2.9<br>~~es~~<br>~~es~~<br>~~DD~~|–––<br>~~es~~<br>~~DD~~|||
|Qoss|Output Charge<br>~~es~~<br>~~GO~~<br>~~GD~~|–––<br>~~es~~<br>~~ee~~<br>~~GO~~<br>~~GD~~|3.7<br>~~es~~<br>~~es~~<br>~~GO~~<br>~~DD~~<br>~~GD~~|–––<br>~~es~~<br>~~GO~~<br>~~DD~~<br>~~GOGO~~|nC<br>~~GO~~<br>~~GO CO~~<br>~~GOGO~~|VDS= 16V, VGS= 0V<br>~~GO~~<br>~~CO~~<br>~~GOGO~~|
|Rg|Gate Resistance<br>~~GO~~<br>~~GD~~|–––<br>~~GO~~<br>~~GD~~|2.2<br>~~GO~~<br>~~DD~~<br>~~GD~~|3.5<br>~~GO~~<br>~~DD ~~<br>~~GOGO~~|Ω<br>~~GO~~<br> ~~GO CO~~<br>~~GOGO~~|~~GO~~<br>~~CO~~<br>~~GOGO~~|
|td(on)|Turn-On DelayTime<br>~~GD~~<br>~~a~~|–––<br>~~GD~~<br>~~a~~|6.7<br>~~GD ~~<br>~~a~~|–––<br> ~~GOGO~~<br>~~a~~|ns<br>~~GOGO~~|RG= 1.8Ω<br>VDD= 15V, VGS= 4.5V<br>ID= 8.8A<br>See Fig. 18<br>~~GOGO~~|
|tr|Rise Time<br>~~eG~~|–––<br>~~eG~~|7.9<br>~~eG~~|–––<br>~~eG~~|||
|td(off)<br>~~a~~|Turn-Off DelayTime<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~ee~~<br>|7.3<br>~~a~~<br>~~es~~<br>|–––<br>~~a~~<br>|||
|tf<br>~~a~~|Fall Time<br>~~es~~<br>~~a~~|–––<br>~~es~~<br>~~ee~~<br>|4.4<br>~~es~~<br>~~es~~<br>|–––<br>~~es~~<br>|||
|Ciss<br>~~a~~|Input Capacitance<br>~~es~~<br>~~a~~|–––<br>~~es~~<br>~~ee~~<br>|760<br>~~es~~<br>~~es~~<br>|–––<br>~~es~~<br>|pF|VGS= 0V<br>VDS= 15V<br>ƒ= 1.0MHz|
|Coss<br>~~a~~|Output Capacitance<br>~~aeG~~|–––<br>~~ee ~~<br>~~eG~~|170<br> ~~es~~<br>~~eG~~|–––<br>~~eG~~|||
|Crss|Reverse Transfer Capacitance<br>~~eG~~|–––<br>~~eG~~|82<br>~~eG~~|–––<br>~~eG~~|||



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100<br>VGS<br>TOP           10V<br>5.0V<br>4.5V<br>3.5V<br>10 g in 3.0V<br>2.7V<br>2.5V<br>T_T BOTTOM 2.3V<br>1 i |i<br>eee a<br>0.1 ≤60µs PULSE WIDTH<br>Tj = 25°C<br>0.01 aFT Pte  A 2.3V r| iTH<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>100 S S ae<br>a TJ = 150°C A<br>10<br>ey  (ee ee<br>Ee ee 2 0 eee ee eee<br>P A TJ = 25°C R<br>1<br>2 ee<br>= —<br>VDS = 15V<br>0.1 |FPff fo. ≤60µs PULSE WIDTH Fb<br>1 2 3 4 5 6<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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100<br>VGS<br>TOP           10V<br>5.0V<br>4.5V<br>3.5V<br>3.0V ee LHI<br>2.7V<br>10 2.5V<br>BOTTOM 2.3V Pr<br>o r<br>1<br>e T TIE I<br>2.3V<br>≤60µs PULSE WIDTH<br>pf<br>0.1 lll Tj = 150°C ll<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>2.0<br>I = 11A<br>D<br>VGS = 10V LEE<br>LLL LE<br>1.5<br>pa<br>7<br>Beeep denne<br>1.0<br>pa AO<br>L T LL LT<br>0.5 PLEELL ELLE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

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10000 5.0<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED ID= 8.8A<br>Crss   = C gd  VDS= 24V<br>Coss   = Cds + Cgd 4.0 VDS= 15V<br>1000 S C e  eee S En EE O7E<br>iss<br>ooo coo a Yen<br>3.0<br>| Coss<br>2.0<br>100 Crss<br>E F eS T TT<br>1.0<br>10 ee r T 0.0 Ji) byl<br>1 10 100 0 1 2 3 4 5 6 7 8<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>Fig 5.   Typical Capacitance vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)(on)<br>100 100<br>100µsec<br>1msec<br>TJ = 150°C<br>10 10<br>a n AyA, Aff |_| Pii e sala HR,,<br>10msec<br>a TJ = 25°C emailmail em aii e e aiiil<br>1 1<br>ff a miiiiii imaa t<br>TA = 25°CA = 25°C = 25°C im wal<br>Tj = 150°C<br>VGS = 0V Single Pulse<br>0.1 a ee 0.1 PAN<br>0.4 0.6 0.8 1.0 1.2 1.4 0 1 10<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)(on)<br>100<br>100µsec<br>1msec<br>10<br>Pii e sala HR,,<br>10msec<br>emailmail em aii e e aiiil<br>1<br>a miiiiii imaa t<br>TA = 25°CA = 25°C = 25°C im wal<br>Tj = 150°C<br>Single Pulse<br>0.1 PAN<br>0 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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12<br>S E 2.5<br>10<br>2.2<br>8<br>P SS R EE<br>1.9 ID = 250µA<br>6<br>C OA RS A<br>1.6<br>4 ID = 25µA<br>H oe Ne} EES<br>2 1.3<br>P AY LEE NA<br>0<br>1.0<br>25 PN 50 75 100 125 150 =  COTTE -75 -50 -25 0 25 50 75 100 125 150<br> TA , Ambient Temperature (°C)<br>TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Threshold Voltage vs. Temperature<br>Ambient Temperature<br>100<br>D = 0.50<br>10 0.20<br>0.10<br>0.05<br>1 0.02 SINGLE PULSE<br>0.01<br>( THERMAL RESPONSE )<br>0.1 PDM<br>R 1 R 1 R 2 R 2 R 3 R 3 R 4R 4 Ri (°C/W)    τi (sec) t1<br>τJ τJ τAτA 2.2284     0.000169 t2<br>0.01 τ1 τ 1 τ 2 τ 2 τ 3 τ 3 τ 4 τ 4 7.0956     0.01373825.4895   0.68725 Notes:<br>Ci= τi/Ri 1. Duty factor D = t   / t 1 2<br>Ci= τi/Ri 15.1981    25.8 2. Peak T J = P DM x  Z thJA + TA<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>ID,  Drain Current (A)<br>VGS(th), Gate Threshold Voltage (V)<br>Thermal Response ( Z thJA ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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35 250<br>ID = 11A    ID<br>TOP           0.67A<br>30 Tit ite aaa<br>200   0.82A<br>BOTTOM   8.80A<br>MILETET<br>25<br>ET | 150 y e<br>20<br>WH A P<br>T = 125°C 100<br>J<br>15<br>10 TJ = 25°C 50<br>tess |  E NT<br>5 PEELE ELT 0 T OSS<br>2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>VGS, Gate -to -Source Voltage  (V)<br>Fig 12.  On-Resistance vs. Gate Voltage Fig 13.   Maximum Avalanche Energy<br>vs. Drain Current<br>V(BR)DSS<br>15V _ tp<br>L<br>VCC<br>VDS L DRIVER DUT<br>0<br>RG D.U.T + 20K1K S<br>- [V][DD]<br>IAS A<br>20V<br>tp 0.01Ω IAS<br>Fig 14.   Unclamped Inductive Test Circuit Fig 15.   Gate Charge Test Circuit<br>and Waveform<br>Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgodr Qgd Qgs2 Qgs1<br>) Ω<br>RDS(on),  Drain-to -Source On Resistance (m EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 16.** Gate Charge Waveform 

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**==> picture [415 x 436] intentionally omitted <==**

**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period ——— — D = —— Period<br>Circuit Layout Considerations V | GS=10V<br>   •<br>(4) [©)] ) t<br>•<br>| =] - LowGround StrayPla I n eductance<br>•   Low Leakage Inductance a) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [l] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 _ VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( 4 •   dv/dt controlled by Rg Vop - Inductor Curent<br>•<br>D.U.T. - Device Under Test SOO |<br>Isp controlled by Duty Factor "D" @ Ripple  ≤ 5% ISD<br>* Vg = 5V for Logic Level Devices<br>Fig 17. eak Diode Recovery dv/dt Test Circuit or N-Channel<br>HEXFET ® ower MOSFETs<br>Rp VDS<br>90%<br>Ves \ |<br>Re D.U.T. |<br>+<br>° - Vopb |<br>10% [\_<br>Pulse Width  1 s VGS | | |<br>Duty Factor  0.1 % levies<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

**Fig 18b.** Switching Time Waveforms 

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## **SO-8  Package Outline** 

Dimensions are shown in milimeters (inches) 

## **SO-8 Part Marking Information** 

**Note: For the most current drawing please refer to IR website at http://www.irf.com/package** 

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## **SO-8 Tape and Reel** 

Dimensions are shown in milimeters (inches) 

**==> picture [173 x 114] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>oOO 0) fF<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) ed FEED DIRECTION a<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

**==> picture [154 x 68] intentionally omitted <==**

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 330.00<br>(12.992)<br>  MAX.<br>PY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.38mH, RG = 25Ω, IAS = 8.8A. Pulse width ≤ 400µs; duty cycle ≤ 2%. When mounted on 1 inch square  copper board. Rθ is measured at TJ of approximately 90°C. 

## **Note: For the most current drawing please refer to IR website at http://www.irf.com/package** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 08/2007 

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> specialises in exactly the cases where availability is the real problem: stock
> shortages, allocation crises, end-of-life components, and cost-reduction
> alternatives. They guarantee delivery even during supply chain disruptions and
> typically respond to quote requests within one business day.
> [Request a quote](https://novapart.co/quote/) — it's free and there's no
> minimum order.