# Power MOSFET, N Channel, 30 V, 190 A, 1400 µohm, WDSON, Surface Mount

![Product image](https://novapart.co/image/farnell:3227660/)

**URL**: https://novapart.co/products/IRF8302MTRPBF/power-mosfet-n-channel-30-v-190-a-1400-ohm-wdson
**SKU**: IRF8302MTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9920
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 5Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 104W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | WDSON |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 190A |
| Drain Source On State Resistance | 1400µohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3227660/)

> RoHs Compliant and Halogen-Free Oo 

## HEXFET ® Power MOSFET plus Schottky Diode 

- Integrated Monolithic Schottky Diode 

- Low Profile (<0.7 mm) 

|**VDSS**|**VDSS**|**VGS**|**VGS**|**RDS(on)**|**RDS(on)**|**RDS(on)**|**RDS(on)**|**RDS(on)**|
|---|---|---|---|---|---|---|---|---|
|30V max||±20V max||1.4mΩ@ 10V|||2.2mΩ@ 4.5V||
|**Qg  tot**|**Qgd**||**Qgs2**||**Qrr**|**Qoss**||**Vgs(th)**|
|35nC<br>|8.9nC<br>||5.1nC<br>||40nC<br>|29nC<br>||1.8V<br>|



- Dual Sided Cooling Compatible 

- Ultra Low Package Inductance 

- Optimized for High Frequency Switching 

- Ideal for CPU Core DC-DC Converters 

- e@ ~~°~~ Optimized for Sync. FET socket of Sync. Buck Converter ~~®~~ 

- ~~;~~ Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques 

100% Rg tested 

|||||||||||||DirectFET<br>ISOMETRIC|DirectFET<br>ISOMETRIC|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Applicable DirectFET Outline and  Substrate Outline||||licable DirectFET Outline and  Substrate Outline(seep.7,8 for details)||||®||||||
|SQ<br>**Description**<br>~~LS~~||SX<br>**Description**|ST||MQ|**MX**|MT||MP|||||



## **Description** 

The IRF8302MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET[®] packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.  The DirectFET[®] package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET[®] package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. 

The IRF8302MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF8302MPbF has been optimized for parameters that are critical in synchronous buck converter’s Sync FET sockets. 

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Base Part number Package Type Standard Pack Orderable Part Number<br>Form Quantity<br>IRF8302MPbF DirectFET MX Tape and Reel 4800 IRF8302MTRPbF<br>Absolute Maximum Ratings<br>a Parameter Max. Units<br>VDS Drain-to-Source Voltage 30 V<br>VGS oe Gate-to-Source Voltage  ±20<br>ID @ TA = 25°C   © Continuous Drain Current, VGS @ 10V  31<br>ID @ TA = 70°C © Continuous Drain Current, VGS @ 10V  25 A<br>ID @ TC = 25°C Continuous Drain Current, VGS @ 10V  190<br>PO<br>IDM Pulsed Drain Current  250<br>—_—— ae<br>EAS Single Pulse Avalanche Energy 260 mJ<br>© Qe<br>IAR ©eG Avalanche Current 25 A<br>6 14.0<br>5 ID = 31A 12.0 ID= 25A VDS= 24V<br>4 SCA E P 10.0 L TT VDS= 15V PTTeee yy<br>VDS= 6.0V<br>8.0<br>3 FFRKET TI T J  = 125°C CT a n =” an<br>6.0<br>2 PT MEE HS - C O  G A<br>ARAL T | PA TO<br>4.0<br>1 4 T J  = 25°C SEES 2.0 |<br>an PP R ATTLE<br>0 | tT | tt 0.0 YET TT Tt ttt<br>0 2 4 6 8 10 12 14 16 18 20 0 10 20 30 40 50 60 70 80 90 100<br>VGS, Gate -to -Source Voltage  (V)  QG  Total Gate Charge (nC)<br>)Ω<br>Typical RDS(on) (m<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Typical  Total Gate Charge vs. Gate-to-Source Voltage 

Notes: ® Click on this section to link to the appropriate technical paper. ® TC measured with thermocouple mounted to top (Drain) of part.C measured with thermocouple mounted to top (Drain) of part. measured with thermocouple mounted to top (Drain) of part. 

® TC measured with thermocouple mounted to top (Drain) of part.C measured with thermocouple mounted to top (Drain) of part. measured with thermocouple mounted to top (Drain) of part. Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.83mH, RG = 25Ω, IAS = 25A. 

® Click on this section to link to the appropriate technical paper. ® Click on this section to link to the DirectFET Website.[®] o) Surface mounted on 1 in. square Cu board, steady state. © 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~a~~|30<br>~~GN~~|–––<br>~~GN~~|–––<br>~~QO~~|V<br>~~QO ~~|VGS= 0V, ID= 1.0mA<br> ~~OO~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~OO~~|–––<br>~~OO~~|4.0<br>~~OO~~|–––<br>~~OO~~|mV/°C<br>~~OO~~|Reference to 25°C, ID= 10mA<br>~~OO~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~ee~~|1.4<br>~~ee~~<br>~~ee~~|1.8<br>~~ee~~|mΩ<br>~~ee~~|VGS= 10V, ID= 31A<br>~~ee~~<br>~~@~~|
|||–––<br>~~ee~~<br>~~ee~~|2.2<br>~~ee~~<br>~~ee~~|2.7<br>~~ee~~||VGS= 4.5V, ID= 25A<br>~~ee~~<br>~~@~~|
|VGS(th)|Gate Threshold Voltage<br>~~a~~<br>~~ee~~|1.35<br>~~ee ~~<br>~~QO~~<br>~~ee~~|1.8<br> ~~ee~~<br>~~QO~~<br>~~OO~~<br>|2.35<br>~~QO~~<br>~~OO~~<br>|V<br>~~QO~~<br>~~OO~~<br>|VDS= VGS, ID= 150µA<br>~~@~~<br>~~QO~~|
|∆VGS(th)/∆TJ|Gate Threshold Voltage Coefficient<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~<br>~~a~~|-4.2<br>~~es~~<br>~~OO~~<br>~~ee~~|–––<br>~~es~~<br>~~OO~~<br>~~ee~~|mV/°C<br>~~es~~<br>~~OO~~<br>~~ee~~|VDS= VGS, ID= 10mA<br>~~es~~|
|IDSS|Drain-to-Source Leakage Current<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~<br>~~a~~|–––<br>~~es~~<br>~~OO~~<br>~~ee~~|100<br>~~es~~<br>~~OO~~<br>~~ee~~|µA<br>~~es~~<br>~~OO~~<br>~~ee~~|VDS= 24V, VGS= 0V<br>~~es~~|
|||–––<br>~~ee~~<br>~~a~~|–––<br>~~OO~~<br>~~ee~~|5.0<br>~~OO~~<br>~~ee~~|mA<br>~~OO~~<br>~~ee~~|VDS= 24V, VGS= 0V, TJ= 125°C|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee~~|–––<br>~~ee ~~<br>~~a~~|–––<br>~~OO~~<br> ~~ee ~~|100<br>~~OO~~<br> ~~ee~~|nA<br>~~OO~~<br>~~ee~~|VGS= 20V|
||Gate-to-Source Reverse Leakage<br>~~es~~|–––<br>~~es~~|–––<br>~~es~~|-100<br>~~es~~||VGS= -20V|
|gfs|Forward Transconductance<br>~~a~~|120<br>~~GO~~<br>~~ee~~|–––<br>~~GO~~<br>~~ee~~|–––<br>~~GO~~|S<br>~~GO ~~|VDS= 15V, ID= 25A<br> ~~QO~~|
|Qg|Total Gate Charge<br>~~a~~|–––<br>~~a~~<br>~~ee~~|35<br>~~a~~<br>~~ee~~|53<br>~~a~~|nC<br>~~GO~~|See Fig. 15<br>VGS= 4.5V<br>ID= 25A<br>VDS= 15V|
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~a~~|–––<br>~~ee~~<br>~~a~~|11<br>~~ee~~<br>~~a~~|–––<br>~~a~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|5.1<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|Qgd|Gate-to-Drain Charge<br>~~a~~|–––<br>~~a~~<br>~~ee~~|8.9<br>~~a~~<br>~~ee~~|–––<br>~~a~~|||
|Qgodr|Gate Charge Overdrive<br>~~a~~|–––<br>~~ee~~<br>~~a~~<br>~~ee~~|10<br>~~ee~~<br>~~a~~<br>~~ee~~|–––<br>~~a~~|||
|Qsw|Switch Charge(Qgs2+ Qgd)<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~ee~~<br>~~GO~~|14<br>~~a~~<br>~~ee~~<br>~~GO~~|–––<br>~~a~~<br>~~GO~~|||
|Qoss|Output Charge<br>~~es~~<br>~~a~~|–––<br>~~ee~~<br>~~es~~<br>~~GO~~|29<br>~~ee~~<br>~~es~~<br>~~GO~~|–––<br>~~es~~<br>~~GO~~|nC<br>~~es~~<br>~~GO~~|VDS= 16V, VGS= 0V<br>~~es~~|
|RG|Gate Resistance<br>~~es~~<br>~~a~~<br>~~es~~|–––<br>~~es~~<br>~~GO~~<br>~~GO~~<br>~~es~~|1.3<br>~~es~~<br>~~GO~~<br>~~GO~~|2.2<br>~~es~~<br>~~GO~~|Ω<br>~~es~~<br>~~GO~~<br>~~GO~~|~~es~~<br>@|
|td(on)|Turn-On DelayTime<br>~~es~~|–––<br>~~GO~~<br>~~es~~|22<br>~~GO~~|–––|ns<br>~~GO~~|ID= 25A<br>VDD= 15V, VGS= 4.5V<br>RG= 1.8Ω<br>See Fig. 17<br>@|
|tr|Rise Time<br>~~es ~~<br>~~a~~|–––<br>~~GO~~<br> ~~es~~<br>~~a~~<br>~~ee~~|37<br>~~GO~~<br>~~a~~<br>~~ee~~|–––<br>~~a~~|||
|td(off)|Turn-Off DelayTime<br>~~a~~|–––<br>~~a~~<br>~~ee~~|20<br>~~a~~<br>~~ee~~|–––<br>~~a~~|||
|tf|Fall Time<br>~~a~~|–––<br>~~ee~~<br>~~a~~<br>~~ee~~|15<br>~~ee~~<br>~~a~~<br>~~ee~~|–––<br>~~a~~|||
|Ciss|Input Capacitance<br>~~a~~|–––<br>~~a~~<br>~~ee~~<br>~~es~~|6030<br>~~a~~<br>~~ee~~|–––<br>~~a~~|pF|VGS= 0V<br>VDS= 15V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~es~~<br>~~ee~~|1360<br>~~ee~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~es~~<br>~~ee~~<br>~~ee~~|560<br>~~ee~~<br>~~es~~|–––<br>~~ee~~|||



@ Pulse width ≤ 400µs; duty cycle ≤ 2%. 

## **Absolute Maximum Ratings** 

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a Parameter Max. Units<br>PD @TA = 25°C © Power Dissipation  2.8 W<br>PD @TA = 70°C Power Dissipation  1.8<br>PD @TC = 25°C © Power Dissipation  a 104<br>a a<br>TP  Peak Soldering Temperature 270 °C<br>TJ  Operating Junction and -40  to + 150<br>TSTG Storage Temperature Range Z<br>Thermal Resistance<br>Parameter Typ. Max. Units<br>RθJA  © Junction-to-Ambient   ––– 45<br>RθJA  Junction-to-Ambient   12.5 –––<br>RθJA  a© Junction-to-Ambient   20 ––– °C/W<br>RθJC  a Junction-to-Case  ––– 1.2<br>RθJ-PCB  a Junction-to-PCB Mounted 1.0 –––<br>Linear Derating Factor  0.022 W/°C<br>a<br>100<br>D = 0.50<br>a1 ae on ON AA TTI I ee<br>10 0.20<br>0.10<br>1 a 0.020.05 aa em R 1 R 1 R 2 R 2 R | 3R 3 R 4R 4 Ri (°C/W)    τi (sec)<br>aeice ep e 0.01 enaPreaeeg eeeTalll τJ τJτ1 τ1 e τ2 τ2 w τ3 ow τ3 we) τ4 τ4 τAτA |HE-— 14.507       12.3350778.742         0.186593518.806       1.9583548 fff7<br>ee | Ci= τi/Ri i<br>0.1 e e eel Ci= τi/Ri 74 2.945         0.0065404<br>Notes:<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthja + Tc<br>0.01 eZaiiilll | eeeHeeee eal Hlll<br>1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 3.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (At lower pulse widths ZthJA & ZTHJC are combined) 

Used double sided cooling , mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. 

Rθ is measured at TJ of approximately 90°C. 

® Surface mounted on 1 in. square Cu (still air). 

@® Mounted to a PCB with small clip heatsink (still air) 

©) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 

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1000<br>VGS<br>TOP           10V<br>5.0V<br>4.5V<br>100 4.0V<br>3.5V<br>3.0V<br>2.8V<br>10 BOTTOM 2.5V<br>1<br>0.1 2.5V<br>≤60µs PULSE WIDTH<br>Tj = 25°C<br>0.01<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 4.   Typical Output Characteristics<br>1000<br>VDS = 15V<br>≤60µs PULSE WIDTH<br>100<br>T  = 150°C<br>J<br>T  = 25°C<br>10 J<br>T  = -40°C<br>J<br>1<br>0.1<br>1 2 3 4<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current  (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Transfer Characteristics 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>C  = C<br>rss   gd<br>C = C + C<br>oss   ds  gd<br>10000<br>C<br>iss<br>C<br>oss<br>1000<br>C<br>rss<br>100<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 8.** Typical Capacitance vs.Drain-to-Source Voltage 

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1000<br>VGS<br>TOP           10V<br>5.0V<br>4.5V<br>4.0V<br>3.5V<br>3.0V<br>100 2.8V<br>BOTTOM 2.5V<br>10<br>2.5V<br>≤60µs PULSE WIDTH<br>Tj = 150°C<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Output Characteristics<br>2.0<br>ID = 31A<br>VGS = 10V<br>1.5 VGS = 4.5V<br>1.0<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>  Normalized On-Resistance vs. Temperature<br>10<br>T = 25°C<br>J  Vgs = 3.5V<br>Vgs = 4.0V<br>8<br>Vgs = 4.5V<br>Vgs = 5.0V<br>Vgs = 10V<br>6<br>4<br>2<br>0<br>0 50 100 150 200<br>ID, Drain Current (A)<br>)Ω<br>Typical RDS(on) (m<br>ID, Drain-to-Source Current (A)<br>Typical RDS(on) (Normalized)<br>**----- End of picture text -----**<br>


**Fig 7.** Normalized On-Resistance vs. Temperature 

**Fig 9.** Typical On-Resistance vs. Drain Current and Gate Voltage 

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Té4zR | IRF8302MPbF<br>1000 1000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>100µse c<br>100 100<br>1msec<br>10ms e c<br>10 10<br>DC<br>T  = 150°C<br>J<br>1 TJ = 25°C 1<br>TJ = -40°C TA = 25°C<br>T  = 150°C<br>VGS = 0V Single PulseJ<br>HEE eye<br>0 0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0.10 1.00 10.00 100.00<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 10.   Typical Source-Drain Diode Forward Voltage Fig11.   Maximum Safe Operating  Area<br>200 2.4<br>2.2<br>S OT] E CHEEEOEE<br>150<br>PN aN<br>2.0<br>C SE E NG<br>100 ID = 10mA<br>1.8<br>G R a nnnanens<br>50 \ T LL NE<br>1.6<br>0 1.4<br>PL ELIA P LES\<br>25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150<br> TC , Case Temperature (°C) TJ , Temperature ( °C )<br>Fig 12.   Maximum Drain Current vs. Case Temperature Fig 13.   Typical Threshold Voltage vs. Junction<br>Temperature<br>1200<br>ID<br>TOP      1.3A<br>1000<br>2.2A<br>BOTTOM 25A<br>800<br>600 E NSRRREEEE<br>400<br>N N EE<br>200<br>P SST<br>PiSSS<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>Typical VGS(th) Gate threshold Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>ID,  Drain Current (A)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Avalanche Energy vs. Drain Current 

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Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>0<br>S Vgs(th)<br>201 K<br>Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>


**Fig 15a.** Gate Charge Test Circuit 

**Fig 15b.** Gate Charge Waveform 

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15V<br>L DRIVER<br>VDS<br>D.U.T +<br>- [V][DD]<br>IAS<br>: 20V dt<br>t 0.01Ω<br>p<br>**----- End of picture text -----**<br>


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IAS<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp -><br>**----- End of picture text -----**<br>


**Fig 16a.** Unclamped Inductive Test Circuit 

**Fig 16b.** Unclamped Inductive Waveforms 

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+<br>-<br>≤ 1<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 17a.** Switching Time Test Circuit 

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VDS<br>90%<br>a<br>10% /\<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 17b.** Switching Time Waveforms 

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Driver Gate Drive<br>P.W.<br>D.U.T ——— Period D = —<br>+ P.W. Period<br>) [©)]    •  Circuit Layout Considerations V ttx GS=10V<br> •<br>-  •   Low Leakage Inductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oB - [1] Current Transformer - ® + Current r Current di/dt NN<br>00 ® D.U.T. VDS Waveform Diode Recovery<br>dv/dt<br>* \ > VDD<br>•   Re-Applied<br>•   Driver same type as D.U.T. ** + Voltage Body Diode  Forward Drop<br>Re ( a4 •   dvidt controlled by Rg Vop - Inductor Curent ee<br>•<br>D.U.T. - Device Under Test es ee<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" @)<br>Use P-Channel Driver for P-Channel Measurements *** \/.5 = 5V for Logic Level Devices<br>Reverse Polarity for P-Channel<br>Fig 18.  Diode Reverse Recovery Test Circuit for HEXFET ®  Power MOSFETs<br>**----- End of picture text -----**<br>


## **Fig 18.** 

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G=GATE<br>D=DRAIN<br>(2X) S=SOURCE<br>145<br>oR<br>GY D | YZ D 5<br>S<br>ED AA<br>G<br>S<br>D Ll D |<br>**----- End of picture text -----**<br>


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DIMENSIONS<br>METRIC IMPERIAL<br>CODE MIN MAX MIN MAX<br>A 6.25 6.35 0.246 0.250<br>pot<br>B 4.80 5.05 0.189 0.199<br>C 3.85 3.95 0.152 0.156<br>pota ee<br>a D  ee 0.35 0.45 0.014 0.018<br>pot E 0.68 0.72 0.027 0.028<br>F 0.68 0.72 0.027 0.028<br>G 1.38 1.42 0.054 0.056<br>pot<br>a H  ee 0.80 0.84 0.032 0.033<br>J 0.38 0.42 0.015 0.017<br>eeee<br>K 0.88 1.01 0.035 0.039<br>L 2.28 2.41 0.090 0.095<br>M 0.59 0.70 0.023 0.028<br>pot R 0.020 0.080 0.0008 0.0031<br>| fo ft<br>ee P 0.08 0.17 0.003 0.007<br>**----- End of picture text -----**<br>


## DirectFET Part Marking 

## GATE MARKING 

## LOGO 

## PART NUMBER 

## BATCH NUMBER 

## DATE CODE 

## Line above the last character of the date code indicates "Lead-Free" 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

## DirectFET Tape & Reel Dimension (Showing component orientation). 

**==> picture [155 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
LO A DE D TA PE FE ED  D IR EC TIO N<br>**----- End of picture text -----**<br>


NOTE: Controlling dimensions in mm 

Std reel quantity is 4800 parts. (ordered as IRF8302MTRPBF). For 1000 parts on 7" reel, order   IRF8302MTR1PBF 

|CODE<br>A<br>B<br>C<br>D<br>E<br>F<br>G<br>H|MIN<br>MAX<br>MIN<br>MAX<br>330<br>N.C<br>12.992<br>N.C<br>20.2<br>N.C<br>0.795<br>N.C<br>12.8<br>13.2<br>0.504<br>0.520<br>1.5<br>N.C<br>0.059<br>N.C<br>100.0<br>N.C<br>3.937<br>N.C<br>N.C<br>18.4<br>N.C<br>0.724<br>12.4<br>14.4<br>0.488<br>0.567<br>11.9<br>15.4<br>0.469<br>0.606<br>METRIC<br>IMPERIAL<br>STANDARD OPTION (QTY 4800)<br>**REEL DIMENSIONS**|N O T E : C O N T R O LLIN G<br>D IM EN S ION S IN  M M|N O T E : C O N T R O LLIN G<br>D IM EN S ION S IN  M M|C O D E<br>A<br>B<br>C<br>D<br>E<br>F<br>G<br>H<br>IM PE R IAL<br>M IN<br>0.3 11<br>0.1 54<br>0.4 69<br>0 .215<br>0.2 01<br>0.2 56<br>0.0 59<br>0.0 59<br>M A X<br>8.10<br>4.10<br>12 .30<br>5.5 5<br>5.30<br>6.70<br>N .C<br>1.60<br>M IN<br>7 .90<br>3 .90<br>11.90<br>5.45<br>5 .10<br>6 .50<br>1 .50<br>1 .50<br>M ET R IC<br>D IM E N S IO N S<br>M A X<br>0.319<br>0.161<br>0.484<br>0.219<br>0.209<br>0.264<br>N .C<br>0.063<br>PT<br>a<br>a<br>ee<br>eeee<br>a<br>a<br>a<br>ee<br>a<br>ee<br>a<br>ee<br>ee<br>ee<br>a<br>ee<br>a<br>ee<br>a|
|---|---|---|---|---|



|**Revision History**|**Revision History**|
|---|---|
|**Date**|**Comments**|
|2/17/2014|•Added the orgering information table, on page 1.<br>•Updated data sheet with new IR corporate template.|





## Links

- [View this product on Novapart](https://novapart.co/products/IRF8302MTRPBF/power-mosfet-n-channel-30-v-190-a-1400-ohm-wdson)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf8302mtrpbf/mosfet-n-ch-30v-190a-150deg-c/dp/3227660)
---

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