# Power MOSFET, N Channel, 30 V, 192 A, 1500 µohm, DirectFET MT, Surface Mount

![Product image](https://novapart.co/image/farnell:2579997RL/)

**URL**: https://novapart.co/products/IRF8301MTRPBF/power-mosfet-n-channel-30-v-192-a-1500-ohm
**SKU**: IRF8301MTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.0000
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:192A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (08-Jul-2021) |
| No. Of Pins | 5Pins |
| Channel Type | N Channel |
| Product Range | StrongIRFET HEXFET Series |
| Qualification | - |
| Power Dissipation | 89W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DirectFET MT |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 192A |
| Drain Source On State Resistance | 1500µohm |
| Gate Source Threshold Voltage Max | 2.35V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2579997RL/)

> DirectFET ™ Power MOSFET 

Ultra-low R DS(on) Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra-low Package Inductance 

|Ultra-low RDS(on)||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Ultra-low RDS(on)<br>Low Profile (<0.7 mm)|||||**VDSS**|||||**VGS**||**RDS(on)**|||||**RDS(on)**|||
|Dual Sided Cooling Compatible|||||30V max||||±20V max|||1.3mΩ@10V||||1.9mΩ@ 4.5V||||
|Ultra-low Package Inductance||||||||||||||||||||
|Optimized for high speed switching or high current||||||||||||||||||||
|switch (Power Tool)||||||||||||||||||||
|Low Conduction and Switching Losses<br>Compatible with existing Surface Mount Techniques||||Compatible with existing Surface Mount Techniques<br>.||||||||||||||||
|||||||||||MT|||||DirectFET||ISOMETRIC<br>“|ISOMETRIC||
|Applicable DirectFET Outline and  Substrate Outline (see p.7,8 for details)|Applicable DirectFET Outline and  Substrate Outline (see p.7,8 for details)|||||||®||||||||||||
|SQ<br>SX<br>ST||MQ||MX||**MT**||||MP||||||||||



Optimized for high speed switching or high current switch (Power Tool) 

Low Conduction and Switching Losses 

Compatible with existing Surface Mount Techniques 

Applicable DirectFET Outline and  Substrate Outline (see p.7,8 for details) 

## **Description** 

The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET[TM] packaging to achieve very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile.  The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. 

The IRF8301MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses and very high current carrying capability make this product ideal for power tools. 

## **Ordering Information** 

|**Ordering Information**|||||
|---|---|---|---|---|
|**Base Part Number**|**Package Type**|**Standard Pack**||**Orderable Part Number**|
|||**Form**|**Quantity**||
|IRF8301MPbF|DirectFET MT|Tape and Reel|4800|IRF8301MTRPbF|



## **Absolute Maximum Ratings** 

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**----- Start of picture text -----**<br>
Parameter Max. Units<br>VGS a Gate-to-Source Voltage  ±20<br>ID @ TA = 25°C   a Continuous Drain Current, VGS @ 10V  34<br>ID @ TA = 70°C © Continuous Drain Current, VGS @ 10V  27 A<br>ID @ TC = 25°C © Continuous Drain Current, VGS @ 10V  192<br>IDM Pulsed Drain Current  250<br>EAS Single Pulse Avalanche Energy  260 mJ<br>IAR Avalanche Current 25 A<br>pe<br>6 5.0<br>5 ID = 32A ID= 25A VDS= 24V<br>4.0<br>VDS= 15V<br>4 PP TT<br>t+ ae<br>3.0<br>3<br>TJ = 125°C 2.0<br>2 a ee ee an<br>1 1.0<br>T = 25°C<br>J<br>2 p A | | fT<br>0 a 0.0 Yi | | | |<br>0 5 10 15 20 0 10 20 30 40 50 60<br> QG,  Total Gate Charge (nC)<br>VGS, Gate -to -Source Voltage  (V)<br>)Ω<br>Typical RDS(on) (m<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Typical  Total Gate Charge vs. Gate-to-Source Voltage 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~pe~~|30<br>~~pe~~|–––<br>~~pe~~<br>~~OG~~|–––<br>~~pe~~<br>~~OG~~|V<br>~~pe~~<br>~~OG~~|VGS= 0V,ID= 250µA<br>~~pe~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~pe~~<br>~~Ds~~|–––<br>~~pe~~<br>~~Ds~~|21<br>~~pe~~<br>~~Ds~~<br>~~OG~~|–––<br>~~pe~~<br>~~Ds~~<br>~~OG~~|mV/°C<br>~~pe~~<br>~~Ds~~<br>~~OG~~|Reference to 25°C,ID= 1mA<br>~~pe~~<br>~~Ds~~|
|RDS(on)<br>~~SS~~|Static Drain-to-Source On-Resistance<br>~~Ds~~<br>~~ee~~<br>~~SS~~<br>~~a~~|–––<br>~~Ds~~<br>~~ee~~<br>~~|~~|1.3<br>~~Ds~~<br>~~OG~~<br>~~ee~~<br>~~| |~~|1.5<br>~~Ds~~<br>~~OG~~<br>~~ee~~<br>~~|~~|mΩ<br>~~Ds~~<br>~~OG~~<br>~~ee~~<br>~~a~~|VGS= 10V,ID= 32A<br>~~Ds~~<br>~~ee~~<br>~~@~~|
|||–––<br>~~ee~~<br>~~|~~<br>~~a~~|1.9<br>~~ee~~<br>~~| |~~<br>~~a~~|2.4<br>~~ee~~<br>~~|~~<br>~~a~~||VGS= 4.5V,ID= 25A<br>~~ee~~<br>~~@~~<br>~~ee~~|
|VGS(th)<br>~~SS~~|Gate Threshold Voltage<br>~~SS~~<br>~~a~~|1.35<br>~~|~~<br>~~a~~|1.7<br>~~| |~~<br>~~a~~|2.35<br>~~|~~<br>~~a~~|V<br>~~a~~|VDS= VGS, ID= 150µA<br>~~@~~<br>~~ee~~|
|∆VGS(th)/∆TJ<br>~~SS~~|Gate Threshold Voltage Coefficient<br>~~SS~~<br>~~a~~|–––<br>~~|~~<br>~~a~~|-6.0<br>~~| |~~<br>~~a~~|–––<br>~~|~~<br>~~a~~|mV/°C<br>~~a~~||
|GS(th)<br>IDSS<br>~~SS~~|Drain-to-Source Leakage Current<br>~~SS~~<br>~~a~~<br>~~i~~|–––<br>~~|~~<br>~~a~~<br>~~**|**~~|–––<br>~~| |~~<br>~~a~~<br>~~**|**~~|1.0<br>~~|~~<br>~~a~~|µA<br>~~a~~|VDS= 24V,VGS= 0V<br>~~@~~<br>~~ee~~|
|||–––<br>~~**|**~~|–––<br>~~**|**~~|150||VDS= 24V,VGS= 0V,TJ= 125°C|
|IGSS|Gate-to-Source Forward Leakage<br>~~i~~<br>~~ee~~|–––<br>~~**|**~~<br>~~ee~~|–––<br>~~**|**~~<br>~~ee~~|100<br>~~ee~~|nA<br>~~| -_——~~<br>~~OG~~|VGS= 20V<br>~~-_——~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~|–––<br>~~ee~~<br>~~OD~~|–––<br>~~ee~~<br>~~OD OG~~|-100<br>~~ee~~<br>~~OG~~||VGS= -20V<br>~~-_——~~|
|gfs|Forward Transconductance<br>~~ee~~<br>~~es~~|150<br>~~ee~~<br>~~es~~<br>~~OD~~|–––<br>~~ee~~<br>~~es~~<br>~~OD OG~~|–––<br>~~ee~~<br>~~es~~<br>~~OG~~|S<br>~~| -_——~~<br>~~es~~<br>~~OG~~|VDS= 15V,ID= 25A<br>~~-_——~~<br>~~es~~|
|Qg|Total Gate Charge<br>~~es~~|–––<br>~~es~~<br>~~OD~~|51<br>~~es~~<br>~~OD OG~~|77<br>~~es~~<br>~~OG~~|nC<br>~~es~~<br>~~OG~~|See Fig. 15<br>VGS= 4.5V<br>ID= 25A<br>VDS= 15V<br>~~es~~|
|g<br>Qgs1|Pre-Vth Gate-to-Source Charge<br>~~a~~|–––<br>~~a~~|12<br>~~a~~|–––<br>~~a~~|||
|gs1<br>Qgs2|Post-Vth Gate-to-Source Charge|–––|5.4|–––|||
|Qgd|Gate-to-Drain Charge<br>~~ee~~|–––<br>~~ee~~|16<br>~~ee~~|–––<br>~~ee~~|||
|gd<br>Qgodr|Gate Charge Overdrive<br>~~a~~|–––<br>~~a~~<br>~~ee~~|18<br>~~a~~<br>~~ee~~|–––<br>~~a~~|||
|godr<br>Qsw|Switch Charge(Qgs2+Qgd)<br>~~a~~|–––<br>~~a~~<br>~~ee~~|21<br>~~a~~<br>~~ee~~|–––<br>~~a~~|||
|Qoss|Output Charge<br>~~pe~~|–––<br>~~ee ~~<br>~~pe~~|28<br> ~~ee~~<br>~~pe~~|–––<br>~~pe~~|nC<br>~~pe~~|VDS= 16V,VGS= 0V<br>~~pe~~|
|RG|Gate Resistance<br>~~pe~~|–––<br>~~pe~~|1.0<br>~~pe~~|3.0<br>~~pe~~|Ω<br>~~pe~~|~~pe~~|
|td(on)|Turn-On DelayTime<br>~~pe~~<br>~~a~~|–––<br>~~pe~~<br>~~a~~|20<br>~~pe~~<br>~~a~~|–––<br>~~pe~~<br>~~a~~|ns<br>~~pe~~<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|RG= 1.8Ω<br>ID= 25A<br>VDD= 15V, VGS= 4.5V<br>See Fig. 17<br>~~pe~~<br>~~aC~~<br>~~a~~<br>~~a~~<br>~~a~~|
|tr|Rise Time<br>~~a~~|–––<br>~~a~~|30<br>~~a~~|–––<br>~~a~~|||
|td(off)|Turn-Off DelayTime<br>~~a~~|–––<br>~~a~~<br>~~ee~~|25<br>~~a~~<br>~~ee~~|–––<br>~~a~~|||
|d(off)<br>tf|Fall Time<br>~~a~~|–––<br>~~a~~<br>~~ee~~|17<br>~~a~~<br>~~ee~~|–––<br>~~a~~|||
|Ciss|Input Capacitance<br>~~a~~|–––<br>~~ee ~~<br>~~a~~|6140<br> ~~ee~~<br>~~a~~|–––<br>~~a~~|pF|ƒ= 1.0MHz<br>VGS= 0V<br>VDS= 15V|
|Coss|Output Capacitance<br>~~a~~|–––<br>~~a~~|1270<br>~~a~~|–––<br>~~a~~|||
|Crss|Reverse Transfer Capacitance<br>~~a~~|–––<br>~~a~~|590<br>~~a~~|–––<br>~~a~~|||



O) Click on this section to link to the appropriate technical paper. @ TC measured with thermocouple mounted to top (Drain) of part. @ Click on this section to link to the DirectFET Website. ©) Repetitive rating;  pulse width limited by max. junction temperature. @ Surface mounted on 1 in. square Cu board, steady state. © Starting TJ = 25°C, L = 0.82mH, RG = 25Ω, IAS = 25A. @ Pulse width ≤ 400µs; duty cycle ≤ 2%. 

## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Max.**|**Units**|
|---|---|---|---|---|
|PD @TA= 25°C<br>PD @TA= 70°C<br>PD @TC= 25°C<br>TP|Power Dissipation<br>Power Dissipation<br>Power Dissipation<br>Peak SolderingTemperature<br>270<br>89<br>2.8<br>1.8<br>~~©~~<br>~~«ee~~<br>~~2~~|||W<br>°C|
|TJ|Operating Junction and|-40  to + 150|||
|TSTG|Storage Temperature Range||||
|**Thermal Resistance**|||||
||**Parameter**|**Typ.**|**Max.**|**Units**|
|RθJA<br>RθJA<br>RθJA<br>RθJC<br>RθJ-PCB|Junction-to-Ambient<br>–––<br>45<br>Junction-to-Ambient<br>12.5<br>–––<br>Junction-to-Ambient<br>20<br>–––<br>°C/W<br>Junction-to-Case<br>–––<br>1.4<br>Junction-to-PCB Mounted<br>1.0<br>–––<br>Linear DeratingFactor<br>W/°C<br>0.022<br>~~a~~<br>~~a~~<br>~~a~~<br>~~aGO~~||||



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**----- Start of picture text -----**<br>
100<br>FFEHH EHH EEE el TTT<br>D = 0.50 meerI TH<br>10 a re 0.20 Sh ey |<br>0.10<br>—= 0.05 He<br>1 0.02<br>O a ancM<br>= 0.01 a<br>a | a | | 8<br>0.1 e r ar ee<br>|<br>0.01 w ill SINGLE PULSE Ee | Notes: 8 Md<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>ee Ey 2. Peak Tj = P dm x Zthja + Tc nl<br>0.001 PEmati P Hi TSu cl Sanaa All|<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 3.   Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  @<br>10<br>aeaa aeeeeO00 eeOODeOOO 0 GOeeOO 0 ee|ee eeeee ee el|<br>1 a D = 0.50 a | ees es<br>a a 0.20 O g 0 _— a eeGOO eeOO OO<br>——- s+ HFa ee eeeSS<br>7 0.10 e e a ee ee<br>0.1 c oeIT<br>0.05<br>7 0.02 eS a ee a os 0 ee eeee<br>0.01<br>0.01 r eed eeee | ee ee|<br>S ee FA | TAP ET<br>SINGLE PULSE Notes:<br>0.001 aaeaee eeeel ( THERMAL RESPONSE ) a ee 0SreIee | E 1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc css Hl|Ttll<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC ) °C/W<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 4.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

Used double sided cooling , mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. 

Rθ is measured at TJ of approximately 90°C. 

(6)) Surface mounted on 1 in. square Cu (still air). 

© Mounted to a PCB with small clip heatsink (still air) 

@ Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 

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1000<br>VGS<br>TOP           10V<br>5.0V<br>4.5V<br>4.0V<br>100 A mama 3.5V<br>3.0V<br>2.8V<br>i a BOTTOM 2.5V i<br>10 t ooo TTI|<br>Eri 2.5V ete<br>1 eo<br>a ee ee ee ee<br>≤60µs PULSE WIDTH<br>Tj = 25°C<br>0.1 __| mani<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Output Characteristics 

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**----- Start of picture text -----**<br>
1000<br>VDS = 15V<br>≤60µs PULSE WIDTH LA<br>100<br>——— a ee ae<br>T  = 150°C<br>J<br>T  = 25°C<br>10 J<br>T  = -40°C P/ha<br>J<br>a ee pe ee<br>1 ee ee se ee<br>ee ee ee ee ee ee ee eee<br>0.1 rFTfT/tsitT 4<br>1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current  (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Transfer Characteristics 

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**----- Start of picture text -----**<br>
100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>=— Crss   = C gd<br>F Coss   = Cds + Cgd E<br>10000<br>ee Ciss<br>EeaSSee eeeeeSSSee eee<br>P—— a e e el<br>|| Coss Hit Ey<br>1000<br>C<br>rss<br>a r e nll<br>aPAa eeCTel<br>100<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Capacitance vs.Drain-to-Source Voltage 

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**----- Start of picture text -----**<br>
1000<br>VGS<br>TOP           10V<br>5.0V<br>4.5V<br>4.0V<br>ge 3.5V<br>3.0V<br>100 2.8V<br>[) A LA BOTTOM 2.5V<br>(Or 2<br>2.5V<br>10<br>PS asutremansSS| ll<br>≤60µs PULSE WIDTH<br>Tj = 150°C<br>1 aie<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Output Characteristics 

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**----- Start of picture text -----**<br>
2.0<br>ID = 32A<br>VGS = 10V<br>VGS = 4.5V<br>1.5 r~|_ A<br>Be<br>1.0<br>Fz rl<br>SA<br>0.5 LLL EEL<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>Typical RDS(on) (Normalized)<br>**----- End of picture text -----**<br>


**Fig 8.** Normalized On-Resistance vs. Temperature 

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**----- Start of picture text -----**<br>
5<br>Vgs = 3.5V  TJ = 25°C<br>Vgs = 4.0V<br>4 Vgs = 4.5V  Ti, y<br>Vgs = 5.0V<br>Vgs = 8.0V<br>Vgs = 10V<br>3 <ENA I<br>SN \<br>21 a “Tbr _<br>0 | | fp<br>0 50 100 150 200<br>ID, Drain Current (A)<br>)Ω<br>Typical RDS(on) (m<br>**----- End of picture text -----**<br>


**Fig 10.** Typical On-Resistance vs. Drain Current and Gate Voltage 

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**----- Start of picture text -----**<br>
1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100 TJ = 150°C 100 10msec 100µsec<br>TJ = 25°C 1m sec<br>TJ = -40°C DC<br>10 10<br>1 1<br>Tc = 25°C<br>Tj = 150°C<br>VGS = 0V Single Pulse<br>0 0.1<br>0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 11.   Typical Source-Drain Diode Forward Voltage Fig 12.   Maximum Safe Operating  Area<br>200160120 SPP enneININ 3.02.52.0 BA ERR44PT REERE<br>1.5 ID = 100µA<br>80<br>ID = 150µA eaSN~<br>ID = 250µA<br>40 1.0 ID = 1.0mA<br>ID = 1.0A<br>0.5<br>0<br>-75 -50 -25 0 25 50 75 100 125 150<br>25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>Typical VGS(th) Gate threshold Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
SPP enneININ<br>120160120200160120<br>80<br>40<br>0<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 14.** Typical Threshold Voltage vs. Junction Temperature 

**Fig 13.** Maximum Drain Current vs. Case Temperature 

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**----- Start of picture text -----**<br>
1200<br>ID<br>TOP      2.7A<br>1000<br>3.9A<br>BOTTOM 25A<br>800 KN annae<br>600 E NSGERREEe<br>400<br>N N UTE E<br>200<br>S ST<br>E LT<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 15.** Maximum Avalanche Energy vs. Drain Current 

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**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>0<br>S Vgs(th)<br>201 K<br>Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>


**Fig 16a.** Gate Charge Test Circuit 

**Fig 16b.** Gate Charge Waveform 

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**----- Start of picture text -----**<br>
15V<br>L DRIVER<br>VDS<br>D.U.T +<br>- [V][DD]<br>IAS<br>e 20V dt<br>t 0.01Ω<br>p<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IAS<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp -><br>**----- End of picture text -----**<br>


**Fig 17a.** Unclamped Inductive Test Circuit 

**Fig 17b.** Unclamped Inductive Waveforms 

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+<br>-<br>≤ 1<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


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VDS<br>90%<br>10% /\<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

**Fig 18b.** Switching Time Waveforms 

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Driver Gate Drive<br>P.W.<br>D.U.T ——— Period D = —<br>+ P.W. Period<br>) [©)]    •  Circuit Layout Considerations V ttx GS=10V<br> •<br>-  •   CurrentLow LeakageTransformerInductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>o - 8 1 - ® + Current r Current di/dt NN<br>00 @ D.U.T. VDS Waveform Diode Recoverydv/dt \ ny<br>. VDD<br>•   Re-Applied<br>•   Driver same type as D.U.T. ** + Voltage Body Diode  Forward Drop<br>Re ( a4 •   dv/dt controlled by Rg Vpp - Inductor Curent im<br>•<br>D.U.T. - Device Under Test es ee<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" @<br>**----- End of picture text -----**<br>


## **Fig 19.** 

## for HEXFET Power MOSFETs 

**==> picture [165 x 152] intentionally omitted <==**

**----- Start of picture text -----**<br>
G = GATE<br>0.90 D = DRAIN<br>* 4 0.85 S = SOURCE<br>1.85<br>x2<br>D D<br>c Z 4S. C<br>S<br>G<br>qtdaperat p<br>S<br>AAS D @ < yg D<br>**----- End of picture text -----**<br>


PO DIMENSIONS a a METRIC ee IMPERIAL aa CODE MIN MAX MIN MAX a A 6.25 6.35 ee 0.246 0.250 aa B 4.80 5.05 0.189 0.199 a C 3.85 a 3.95 0.152 0.156 a D 0.35 0.45 ee 0.014 0.018 aa E 0.78 0.82 0.031 0.032 a F 0.88 a 0.92 0.035 0.036 a G 1.78 1.82 ee 0.070 0.072 aa H 0.98 1.02 0.039 0.040 a J 0.63 a 0.67 0.025 0.026 a K 0.88 1.01 ee 0.035 0.039 aa L 2.46 2.63 0.097 0.104 a M 0.616 a 0.676 0.0235 0.0274 a R 0.020 0.080 ee 0.0008 0.0031 P 0.08 0.17 0.003 0.007 a eeee 

## DirectFET ™ Part Marking 

## DirectFET 

## Tape & Reel Dimension (Showing component orientation). 

**==> picture [126 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
LOADED TAPE FEED DIRECTION<br>**----- End of picture text -----**<br>


**==> picture [216 x 19] intentionally omitted <==**

**----- Start of picture text -----**<br>
NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as l d IRF6726M TR1PBF eee ). For 1000 parts on 7"<br>**----- End of picture text -----**<br>


G DIMENSIONS PO METRIC IMPERIAL NOTE: CONTROLLING a CODE MIN ee MAX MIN MAX DIMENSIONS IN MM a eeee es A B 7.90 3.90 8.10 4.10 0.3110.154 0.3190.161 a C 11.90 ee 12.30 ee 0.469 ee 0.484 D 5.45 5.55 0.215 0.219 a ee ee ee E 5.10 5.30 0.201 0.209 a ee ee ee ee F 6.50 ee 6.70 ee 0.256 ee 0.264 G 1.50 N.C 0.059 N.C | H 1.50 1.60 0.059 0.063 

|**Revision History**||
|---|---|
|**Date**|**Comments**|
|09/05/2013|•Added the StrongIRFET logo on the top of the part number, on page 1.|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF8301MTRPBF/power-mosfet-n-channel-30-v-192-a-1500-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf8301mtrpbf/mosfet-n-ch-30v-192a-directfet/dp/2579997RL)
---

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