# Dual MOSFET, N Channel, 12 V, 10 A, 0.0115 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2725921/)

**URL**: https://novapart.co/products/IRF7910TRPBF/dual-mosfet-n-channel-12-v-10-a-00115-ohm-soic
**SKU**: IRF7910TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.8640
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 2W |
| Rds(On) Test Voltage | 4.5V |
| On Resistance Rds(On) | 0.0115ohm |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 12V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 10A |
| Power Dissipation N Channel | 2W |
| Power Dissipation P Channel | 2W |
| Gate Source Threshold Voltage Max | 2V |
| Drain Source Voltage Vds N Channel | 12V |
| Drain Source Voltage Vds P Channel | 12V |
| Continuous Drain Current Id N Channel | 10A |
| Continuous Drain Current Id P Channel | 10A |
| Drain Source On State Resistance N Channel | 0.0115ohm |
| Drain Source On State Resistance P Channel | 0.0115ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725921/)

## IRF7910PbF 

## HEXFET ® Power MOSFET 

## **Applications** 

High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications Power Management for Netcom, Computing and Portable Applications Lead-Free 

## **Benefits** 

Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage and Current 

**VDSS RDS(on) max ID 12V** 15mΩ @VGS = 4.5V 10A 

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S1 1 8 D1<br>G1 2 7 D1<br>S2 3 6 D2<br>G2 4 5 D2<br>SO-8<br>Top View<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

**Symbol Parameter Max. Units** rs er GO VDS Drain-Source Voltage 12 V VGS                                     Gate-to-Source Voltage ± 12                                   V ~~eees~~ ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 10 ~~Rs~~ ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 7.9 A ~~ee———————~~ IDM Pulsed Drain Current 79 ~~ae~~ PD @TA = 25°C Maximum Power Dissipation 2.0 W ~~BP Se~~ PD @TA = 70°C Maximum Power Dissipation 1.3 W ~~BP Se~~ Linear Derating Factor                                                                      16                              mW/°C ~~Sn~~ TJ , TSTG ~~I~~ Junction and Storage Temperature Range -55  to + 150 °C 

## **Thermal Resistance** 

|**Symbol**<br>~~Wf~~|**Parameter**<br>~~Wf~~<br>~~___________+—___|___|~~|**Typ.**<br>~~___________+—___|___|~~|**Max.**<br>~~___________+—___|___|~~|**Units**<br>~~___________+—___|___|—~~|
|---|---|---|---|---|
|RθJL<br>~~Wf~~|Junction-to-Drain Lead<br>~~Wf~~<br>~~___________+—___|___|~~<br>~~Po~~|–––<br>~~___________+—___|___|~~<br>~~Po~~|42<br>~~___________+—___|___|~~|°C/W<br>~~___________+—___|___| —~~|
|RθJA<br>~~Wf~~|Junction-to-Ambient<br>~~Wf~~<br>~~___________+—___|___|~~|–––<br>~~___________+—___|___|~~|62.5<br>~~___________+—___|___|~~||



Notes through  are on page 8 

www.irf.com 

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## IRF7910PbF 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**<br>es|**Parameter**<br>es|**Min.**<br>es<br>ee|**Typ. **<br>es<br>ee|**Max.**<br>es|**Max.**<br>es|**Units**<br>es|**Conditions**<br>es|**Conditions**<br>es|**Conditions**<br>es|
|---|---|---|---|---|---|---|---|---|---|---|
|gfs|Forward Transconductance<br>es||18<br>ee <br>es|–––<br> ee<br>es|–––<br>es||S<br>es|VDS= 6.0V, ID= 8.0A<br>es|||
|Qg|Total Gate Charge<br>~~a~~||–––      17      26                 I<br>~~a~~|–––      17      26                 I<br>~~a~~|–––      17      26                 I<br>~~a~~||–––      17      26                 I<br>nC<br>~~a~~<br>~~es~~<br>~~a~~|–––      17      26                 ID= 8.0A<br>VDS= 6.0V<br>VGS= 4.5V|||
|Qgs|Gate-to-Source Charge<br>~~es~~||–––<br>~~es~~|4.4<br>~~es~~|–––<br>~~es~~||||||
|Qgd<br>Rs|Gate-to-Drain ("Miller") Charge<br>~~a~~||–––<br>~~a~~|5.2<br>~~a~~|–––<br>~~a~~||||||
|gd<br>Qoss<br>Rs<br>Rs|Output Gate Charge<br>~~a~~||–––<br>~~a~~|16<br>~~a~~|–––<br>~~a~~|||VGS= 0V, VDS= 10V|||
|td(on)<br>Rs<br>Rs<br>ee|Turn-On Delay Time<br>~~a~~||–––<br>~~a~~|9.4<br>~~a~~|–––<br>~~a~~||ns<br>~~a~~<br>ee<br>~~ee~~|VDD= 6.0V<br>ID= 8.0A<br>RG= 1.8Ω<br>VGS= 4.5V|||
|d(on)<br>tr<br>Rs<br>ee<br>es|Rise Time<br>ee||–––<br>ee|22<br>ee|–––<br>ee||||||
|td(off)<br>ee<br>es|Turn-Off Delay Time<br>ee||–––<br>ee|16<br>ee|–––<br>ee||||||
|tf<br>es<br>~~ee~~|Fall Time<br>ee<br>~~ee~~||–––<br>ee<br>~~ee~~|6.3<br>ee<br>~~ee~~|–––<br>ee<br>~~ee~~||||||
|Ciss<br>~~ee~~<br>~~Rs~~|Input Capacitance<br>~~ee~~<br>~~es~~<br>||–––<br>~~ee~~<br>~~es~~<br>|1730<br>~~ee~~<br>~~es~~<br>|–––<br>~~ee~~<br>~~es~~<br>||pF<br>~~ee~~<br>~~es~~<br>|VGS= 0V<br>VDS= 6.0V<br>ƒ = 1.0MHz<br>|||
|Coss<br>~~Rs~~|Output Capacitance<br>~~es~~<br>||–––<br>~~es~~<br>|1340<br>~~es~~<br>|–––<br>~~es~~<br>||||||
|Crss<br>~~Rs~~|Reverse Transfer Capacitance<br>~~es~~<br>||–––<br>~~es~~<br>|330<br>~~es~~<br>|–––<br>~~es~~<br>||||||
|**Avalanche Characteristics**<br>|||||||||||
|**Symbol**<br>oe<br>Rs||**Parameter**<br>oe||||**Typ.**<br>oe|||**Max.**<br>oe|**Units**<br>oe|
|EAS<br>oe<br>Rs||Single Pulse Avalanche Energy<br>oe||||–––<br>oe|||100<br>oe|mJ<br>oe|
|IAR<br>oe<br>Rs||Avalanche Current<br>oe||||–––<br>oe|||8.0<br>oe|A<br>oe|
|**Diode Characteristics**<br>oe<br>~~ne~~<br>~~ee~~|||||||||||
|**Symbol**<br>~~ne~~|**Parameter**<br>~~ee~~||**Min.**<br>~~ee~~|**Typ. **|**Max. **||**Units**|**Conditions**|||
|IS<br>~~ne~~|Continuous Source Current<br>(Body Diode)<br>~~ee~~||–––<br>~~ee~~|–––|1.8|||MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>S<br>D<br>G|||
|ISM<br>~~ne~~|Pulsed Source Current<br>(Body Diode)<br>~~ee~~||–––<br>~~ee~~|–––|79||||||
|VSD<br>~~|~~|Diode Forward Voltage<br>~~|~~||–––<br>~~|~~|0.85<br>~~|~~|1.3<br>~~|~~||V|TJ= 25°C, IS= 8.0A, VGS= 0V<br>—-|||
||||–––<br>~~|~~<br>Ft|0.70<br>~~|~~<br>Ft|–––<br>~~|~~<br>Ft|||TJ= 125°C, IS= 8.0A, VGS= 0V<br>—-<br>@|||
|trr<br>~~ee~~<br>~~a~~<br>~~a~~|Reverse RecoveryTime<br>~~ee~~<br>~~a~~<br>||–––<br>~~ee~~<br>|50<br>~~ee~~<br>|75<br>~~ee~~<br>||ns<br>~~ee~~<br>|TJ= 25°C, IF= 8.0A, VR=12V<br>di/dt = 100A/µs<br>~~ee~~<br>~~©~~<br>|||
|Qrr<br>~~ee~~<br>~~a~~<br>~~a~~|Reverse RecoveryCharge<br>~~ee~~<br>~~a~~<br>||–––<br>~~ee~~<br>|60<br>~~ee~~<br>|90<br>~~ee~~<br>||nC<br>~~ee~~<br>||||
|trr<br>~~a~~<br>~~a ee~~|Reverse Recovery Time<br>~~a~~<br>~~ee~~||–––<br>~~ee~~|51<br>~~ee~~|77<br>~~ee~~||ns<br>~~ee~~|TJ= 125°C, IF= 8.0A, VR=12V<br>di/dt = 100A/µs<br>~~©~~<br>~~ee~~<br>®|||
|Qrr<br>a|Reverse Recovery Charge||–––|60|90||nC||||



www.irf.com 

## IRF7910PbF 

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1000 Ves ===ESSS S S EEEEG<br>sev FEFEH<br>100<br>a8<br>3.5V _—<rt |<br>oy2.0V. er1 a<br>10 po rromisy EL}| |<br>1<br>e H<br>1.5V<br>Ff ET<br>0.1<br>20µs PULSE WIDTH<br>0.01 rTee CT CT Tj = 25°C | | | JTttt<br>0.1 1 10<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

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100 a— Ee———a a a a<br>Eea e es e eyes e ee ©es ee<br>TJ = 150°C<br>10 a V/, aa<br>es ey 2 ee ee ee ee eee<br>Ee TJ = 25°C ee<br>sa ee ee<br>PP<br>VDS = 10V<br>20µs PULSE WIDTH<br>1<br>1.0 2.0 3.0 4.0<br>VGS, Gate-to-Source Voltage (V)<br>)(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000 Ves === EEREEG<br>Bay EEE HH<br>100 4sv3.5V2 TAee| + + ++ ++]<br>povrom 27y2.0Vsv gerrars + ee—T TTeee——_ee eeeeTTT<br>10<br>es eeee<br>1.5V<br>1<br>a aeT<br>20µs PULSE WIDTH<br>0.1 Pt TTT Tj = 150°C mannii<br>0.1 1 10<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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2.0<br>ID = 10A<br>P eeEEE<br>1.5 P EEEE<br>1.0 EL eeTT |<br>EEE<br>0.5<br>V GS = 4.5V<br>0.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

www.irf.com 

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## IRF7910PbF 

**==> picture [435 x 478] intentionally omitted <==**

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10000 — = VCGS  iss   = C = 0V,       f = 1 MHZgs + Cgd,  Cds SHORTED 12 ID= 8.0A VDS= 9.6V<br>Crss    = Cgd  10 a VDS= 6.0V a<br>Coss   = Cds + Cgd<br>8<br>| i<br>Ciss<br>1000 eet TR: Coss TII| 6 P| LA<br>Po =PE UNSSSEEEETSeaEEE 4 Ff/ | |<br>Crss<br>P SH E) 2 A<br>FOR TEST CIRCUIT<br>SEE FIGURE 13<br>0<br>100 r r cnn =  Ze<br>0 10 20 30 40<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>100.0 1000<br>OPERATION IN THIS AREA<br>ee 4 A A 7 LIMITED BY R A DS(on)<br>10.0 TJ = 150°CJ = 150°C= 150°C 100<br>. | ff |<br>Eees 2 ee ee ee eee P77] TTT TTT] UH]<br>100µsec<br>es eeee Catt SCI _TII<br>1.0 TJ = 25°CJ = 25°C= 25°C 10<br>ie r Ny 1msec<br>ee ey ee ee eee Tc = 25°C eel<br>10msec<br>VGS = 0VGS = 0V= 0V Tj = 150°C<br>0.1 |—j4—+—"—j4—+—" = 1 Se Single Pulse 1 ll serell<br>0.0 0.5 1.0 1.5 2.0 0 1 10 100<br>VSD, Source-toDrain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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100.0<br>ee 4 A A<br>10.0 TJ = 150°CJ = 150°C= 150°C<br>. | ff<br>‘ Eees 2 eeee ee ee eee<br>1.0 TJ = 25°CJ = 25°C= 25°C<br>ie r<br>ee ey ee ee eee<br>VGS = 0VGS = 0V= 0V<br>0.1 |—j4—+—"—j4—+—" =<br>0.0 0.5 1.0 1.5 2.0<br>VSD, Source-toDrain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

www.irf.com 

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## IRF7910PbF 

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10.0<br>PfPDS Et Vps Ro <<br>8.0 PTMELEE<br>Pt ENE= EL V,y DUT.<br>-<br>6.0 PT tT | INE EL Rg<br>PN<br>Bae Ves<br>≤ 1<br>PPP iN mtr ≤ 0.1 %<br>4.0<br>TEEN —<br>Fig 10a.   Switching Time Test Circuit<br>2.0<br>VDSDS<br>90%<br>0.0 Ft} | i ft | ft tt | \[[ /<br>25 50 75 100 125 150 |<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
VDSDS<br>90%<br>\[[<br>10% /\<br>VGS |\« le >|\TTpl<<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


## **Fig 9.** Maximum Drain Current Vs. Ambient Temperature 

**Fig 10b.** Switching Time Waveforms 

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**----- Start of picture text -----**<br>
 100<br>SS ae ee eeel<br>eeeee<br>ee<br>D = 0.50<br>R S ee __ eee<br>0.20 SET eee e ee<br> 10 r mamemmnnsae (eee cal ON |<br>0.10<br>po pA 0.05 eeeereee || oe tTeeTE ee eeeEtee eee<br>e 0.02 e ae ee P DM<br> 1 = ee IIE<br>0.01 t 1<br>S e<br>pTa a a eerw ee ee ee ee ee ee eee t 2<br>} |_| SINGLE PULSE a ee ee Notes:<br>Pd (THERMAL RESPONSE) 0 1. Duty factor D = t   / t1 2<br>mail ELUM ELEM 1 2. Peak T J = P DM x  Z thJA + T A<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>(Z        )thJA<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

www.irf.com 

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## IRF7910PbF 

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**----- Start of picture text -----**<br>
0.0145 0.020<br>0.0140<br>0.018<br>0.0135<br>0.015<br>0.0130 VGS = 4.5V ID = 8.0A<br>0.013<br>0.0125<br>0.0120 CEE 0.010<br>0 20 40 60 80 100 2.5 3.5 4.5 5.5<br>ID , Drain Current (A) VGS, Gate -to -Source Voltage  (V)<br>Fig 12.    On-Resistance Vs. Drain Current Fig 13.    On-Resistance Vs. Gate Voltage<br>Current Regulator<br>Same Type as D.U.T.<br>QG<br>50KΩ<br>12V .2µF<br>.3µF QGS QGD<br>inf D.U.T. +-VDS VG 250 I D<br>VGS TOP 3.6A<br>3mA Charge 6.4A<br>a® | w y 200 TT BOTTOM 8.0A<br>IG ID<br>Current Sampling Resistors | en PX<br>P NT<br>150 ft<br>Fig 14a&b.   Basic Gate Charge Test Circuit<br>and Waveform<br>GENER<br>KERN eee<br>15V 100 PKNO<br>50 POA AL<br>V(BR)DSS<br>tp VDS L DRIVER<br>_ PAS<br>R G D.U.T + 0<br>/ IAS - [V][DD] A 25 Pt 50 75 100 125 150<br>aa 20V S E °<br>I AS tp 0.01Ω Starting T  , Junction TemperatureJ (  C)<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>)Ω<br>RDS (on) , Drain-to-Source On Resistance (<br>)Ω<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 15a&b.** Unclamped Inductive Test circuit and Waveforms 

6 

**Fig 15c.** Maximum Avalanche Energy Vs. Drain Current 

www.irf.com 

## IRF7910PbF 

## **SO-8 Package Outline** (Mosfet & Fetky) 

Dimensions are shown in milimeters (inches) 

## SO-8 Part Marking Information 

**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

www.irf.com 

7 

## IRF7910PbF 

## **SO-8 Tape and Reel** 

Dimensions are shown in millimeters (inches) 

**==> picture [177 x 278] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>ood 0) fF<br>12.3 ( .484 )<br>11.7 ( .461 )<br>a<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br> 330.00<br>g (12.992)  MAX. \/<br>PY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
NOTES:<br>**----- End of picture text -----**<br>


1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

NOTES : 

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**----- Start of picture text -----**<br>
1. CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>**----- End of picture text -----**<br>


**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 3.2mH RG = 25Ω, IAS = 8.0A. 

Pulse width ≤ 300µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board,  t<10 sec 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2008 

www.irf.com 

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---

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