# Dual MOSFET, N Channel, 30 V, 30 V, 11 A, 11 A, 9800 µohm

![Product image](https://novapart.co/image/farnell:2725920RL/)

**URL**: https://novapart.co/products/IRF7907TRPBF/dual-mosfet-n-channel-30-v-11-a-9800-ohm
**SKU**: IRF7907TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.3780
**Stock**: 1000+
**Lead Time**: 281 days (indicative)

## Description

Transistor Polarity:Dual N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0098ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET Series |
| Qualification | - |
| Transistor Case Style | SOIC |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 2W |
| Power Dissipation P Channel | 2W |
| Drain Source Voltage Vds N Channel | 30V |
| Drain Source Voltage Vds P Channel | 30V |
| Continuous Drain Current Id N Channel | 11A |
| Continuous Drain Current Id P Channel | 11A |
| Drain Source On State Resistance N Channel | 9800µohm |
| Drain Source On State Resistance P Channel | 9800µohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725920RL/)

## IRF7907PbF 

HEXFET ® Power MOSFET 

## **Applications** 

Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box 

|||HEXFET<br>Power MOSFET<br>®|Power MOSFET|
|---|---|---|---|
|**VDSS**||**RDS(on) max**|**ID**|
|**30V**|**Q1 **|**16.4m @VGS = 10V**<br>~~2~~|**9.1A**<br>~~po~~|
||**Q2 **|**11.8m @VGS = 10V**<br>2|**11A**|



## **Benefits** 

° Very Low RDS(on) at 4.5V VGS Low Gate Charge Fully Characterized Avalanche Voltage and Current : 20V VGS  Max. Gate Rating . Improved Body Diode Reverse Recovery 100% Tested for RG Lead-Free 

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SO-8<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

||**Parameter**|**Q1 Max.**|**Q2 Max.**|**Units**|
|---|---|---|---|---|
|VDS|Drain-to-Source Voltage<br>~~a~~<br>~~ee~~|30<br>~~a~~<br>~~ee a~~||V<br>~~a~~|
|VGS|Gate-to-Source Voltage<br>~~ee~~|± 20<br>~~ee a~~|||
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V<br>~~ee~~<br>~~a~~|9.1<br>~~ee~~<br>~~a~~|11<br>~~ee a~~<br>~~a~~|A<br>~~a~~|
|ID@ TA= 70°C|Continuous Drain Current, VGS@ 10V<br>~~eo~~|7.3<br>~~eo~~|8.8<br>~~eo~~||
|IDM<br>~~NN~~|Pulsed Drain Current<br>~~a~~<br>~~NN~~|76<br>~~a~~|85<br>~~a~~||
|PD@TA= 25°C<br>~~NN~~|Power Dissipation<br>~~NN~~|2.0|2.0|W|
|PD@TA= 70°C<br>~~NN~~|Power Dissipation<br>~~NN~~<br>~~a~~|1.3<br>~~a~~<br>~~ee~~|1.3<br>~~a~~<br>~~ee~~||
|~~NN~~|Linear DeratingFactor<br>~~NN~~<br>~~es~~|0.016<br>~~es~~<br>~~ee~~|0.016<br>~~es~~<br>~~ee~~|W/°C<br>~~es~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~es~~|-55  to + 150<br>~~es~~<br>~~ee~~||°C<br>~~es~~|



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1 

07/09/08 

## IRF7907PbF 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Static @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)**<br>IRF7907PbF|**Static @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**<br>IRF7907PbF||||||ntenational|
|---|---|---|---|---|---|---|---|
||**Parameter**|~~GD~~|**Min.**<br>~~GD~~<br>~~ee~~|**Typ.**<br>~~I~~<br>~~ee~~|**Max.**<br>~~ID~~<br>~~ee~~|**Units**<br>~~(OO~~<br>~~ee~~|**Conditions**<br>~~(OO~~|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~es~~|Q1&Q2<br>~~es~~<br>~~GD~~|30<br>~~es~~<br>~~GD~~<br>~~ee~~|–––<br>~~es~~<br>~~I~~<br>~~ee~~|–––<br>~~es~~<br>~~ID~~<br>~~ee~~|V<br>~~es~~<br>~~(OO~~<br>~~ee~~|VGS= 0V,ID= 250µA<br>~~es~~<br>~~(OO~~|
|∆ΒVDSS/∆TJ<br>~~Po~~|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~es~~<br>~~Po~~|Q1<br>~~es~~<br>~~GD~~<br>~~es~~|–––<br>~~es~~<br>~~GD ~~<br>~~es~~<br>~~ee~~|0.024<br>~~es~~<br> ~~I~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~ID ~~<br>~~es~~<br>~~ee~~|V/°C<br>~~es~~<br> ~~(OO ~~<br>~~es~~<br>~~ee~~|Reference to 25°C, ID= 1mA<br>~~es~~<br> ~~(OO~~<br>~~es~~<br>~~d~~|
|||Q2<br>~~es~~|–––<br>~~es~~<br>~~ee~~<br>~~=~~|0.024<br>~~es~~<br>~~ee~~<br>~~=~~|–––<br>~~es~~<br>~~ee~~<br>~~=~~|||
|RDS(on)<br>~~Po~~|Static Drain-to-Source On-Resistance<br>~~Po~~<br>~~a~~|Q1<br>~~EER~~|–––<br>~~ee~~<br>~~=~~<br>~~EER~~|13.7<br>~~ee~~<br>~~=~~<br>~~EER~~|16.4<br>~~ee~~<br>~~=~~<br>~~EER~~|mΩ<br>~~ee~~<br> <br>|VGS= 10V,ID= 9.1A<br>~~d~~<br>~~ES~~|
||||–––<br>~~=~~<br>~~EER~~|17.1<br>~~=~~<br>~~EER~~|20.5<br>~~=~~<br>~~EER~~||VGS= 4.5V,ID= 7.3A<br>~~d~~<br>~~ES~~|
|||Q2<br>~~EER~~<br>|–––<br>~~=~~<br>~~EER~~|9.8<br>~~=~~<br>~~EER~~|11.8<br>~~=~~<br>~~EER~~||VGS= 10V,ID= 11A<br>~~d~~<br>~~ES~~|
||||–––<br>~~=~~<br>~~EER~~<br>|11.5<br>~~=~~<br>~~EER~~<br>|13.7<br>~~=~~<br>~~EER ~~<br>~~I~~<br>||VGS= 4.5V,ID= 8.8A<br>~~d~~<br> ~~ES~~<br>|
|VGS(th)<br>~~Po~~|Gate Threshold Voltage<br>~~Po~~<br>~~DD~~<br>~~a~~|Q1&Q2<br>~~DD~~<br>~~ae~~|1.35<br>~~=~~<br>~~DD~~<br>~~ae~~|1.8<br>~~=~~<br>~~DD~~<br>~~ae~~|2.35<br>~~=~~<br>~~DD~~<br>~~I~~<br>~~ae~~|V<br>~~DD~~<br>~~ae~~|Q2: VDS= VGS, ID= 50µA<br>Q1: VDS= VGS, ID= 25µA<br>~~d~~<br>~~ae~~|
|GS(th)<br>∆VGS(th)/∆TJ|Gate Threshold Voltage Coefficient<br>~~a ~~|Q1<br>~~ae~~|–––<br>~~ae~~|-4.6<br>~~ae~~|–––<br>~~I~~<br>~~ae~~|mV/°C<br>~~ae~~||
|||Q2<br> ~~ae~~|–––<br>~~ae~~|-4.9<br>~~ae~~|–––<br>~~I~~<br>~~ae~~|||
|IDSS|Drain-to-Source Leakage Current<br>~~EE~~|Q1&Q2<br>~~EE~~|–––<br>~~EE~~|–––<br>~~EE~~|1.0<br>~~EE~~|µA<br>~~EE~~|VDS= 24V,VGS= 0V<br>~~EE~~|
|||Q1&Q2<br>~~EE~~|–––<br>~~EE~~|–––<br>~~EE~~|150<br>~~EE~~||VDS= 24V,VGS= 0V,TJ= 125°C<br>~~EE~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~EE~~<br>~~EEE~~|Q1&Q2<br>~~EE~~<br>~~EEE~~|–––<br>~~EE~~<br>~~EEE~~|–––<br>~~EE~~<br>~~EEE~~<br>~~—~~|100<br>~~EE~~<br>~~EEE~~<br>~~—~~|nA<br>~~EE~~<br>~~EEE~~<br>~~—————~~|VGS= 20V<br>~~EE~~<br>~~EEE~~<br>~~————~~|
||Gate-to-Source Reverse Leakage<br>~~EEE~~|Q1&Q2<br>~~EEE~~|–––<br>~~EEE~~|–––<br>~~EEE~~<br>~~—~~|-100<br>~~EEE~~<br>~~—~~||VGS= -20V<br>~~EEE~~<br>~~————~~|
|gfs|Forward Transconductance|Q1|19|–––<br>~~—~~|–––<br>~~—~~|S<br>~~—————~~|VDS= 15V,ID= 7.0A<br>~~————~~|
|||Q2|24|–––<br>~~—~~|–––<br>~~—~~||VDS= 15V,ID= 8.8A<br>~~————~~|
|Qg|Total Gate Charge<br>~~Et~~|Q1<br>~~Et~~|–––<br>~~Et~~|6.7<br>~~—~~<br>~~Et~~|10<br>~~—~~<br>~~Et~~|nC<br>~~—————~~<br>~~ee~~|Q1<br>VDS= 15V<br>VGS= 4.5V, ID= 7.0A<br>Q2<br>VDS= 15V<br>VGS= 4.5V, ID= 8.8A<br>~~————~~|
|||Q2<br>~~Et~~|–––<br>~~Et~~|14<br>~~Et~~|21<br>~~Et~~|||
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~Et~~|Q1<br>~~Et~~|–––<br>~~Et~~|1.3<br>~~Et~~|–––<br>~~Et~~|||
|||Q2<br>~~Et~~|–––<br>~~Et~~|3.0<br>~~Et~~|–––<br>~~Et~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~Et~~|Q1<br>~~Et~~|–––<br>~~Et~~|0.7<br>~~Et~~|–––<br>~~Et~~|||
|||Q2<br>~~Et~~|–––<br>~~Et~~|1.3<br>~~Et~~|–––<br>~~Et~~|||
|Qgd|Gate-to-Drain Charge<br>~~a~~|Q1<br>~~a~~|–––<br>~~a~~|2.5<br>~~a~~|–––<br>~~a~~|||
|||Q2<br>~~a~~|–––<br>~~a~~|4.9<br>~~a~~|–––<br>~~a~~|||
|Qgodr|Gate Charge Overdrive<br>~~EE~~|Q1<br>~~EE~~|–––<br>~~EE~~|2.2<br>~~EE~~|–––<br>~~EE~~|||
|||Q2<br>~~EE~~|–––<br>~~EE~~|4.8<br>~~EE~~|–––<br>~~EE~~|||
|Qsw|Switch Charge (Qgs2+ Qgd)<br>~~SS~~|Q1<br>~~SS~~|–––<br>~~SS~~|3.2<br>~~SS~~|–––<br>~~SS~~|||
|||Q2<br>~~SS~~|–––<br>~~SS~~|6.2<br>~~SS~~|–––<br>~~SS~~|||
|Qoss|Output Charge<br>~~SS~~<br>~~ee~~|Q1<br>~~SS~~<br>~~ee~~|–––<br>~~SS~~<br>~~ee~~|4.5<br>~~SS~~<br>~~ee~~|–––<br>~~SS~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~|VDS= 16V, VGS= 0V<br>~~ee~~|
|||Q2<br>~~ee~~|–––<br>~~ee~~|9.0<br>~~ee~~|–––<br>~~ee~~|||
|RG|Gate Resistance<br>~~ee~~|Q1<br>~~ee~~|–––<br>~~ee~~|2.6<br>~~ee~~|4.7<br>~~ee~~|Ω<br>~~ee~~<br>~~ee~~|~~ee~~|
|||Q2<br>~~ee~~|–––<br>~~ee~~|3.0<br>~~ee~~|5.0<br>~~ee~~|||
|td(on)|Turn-On Delay Time<br>~~ee~~<br>~~Ft~~|Q1<br>~~ee~~<br>~~Ft~~|–––<br>~~ee~~<br>~~Ft~~|6.0<br>~~ee~~<br>~~Ft~~|–––<br>~~ee~~<br>~~Ft~~|ns<br>~~ee~~|ID= 7.0A<br>ID= 8.8A<br>Q1<br>Q2<br>VDD= 15V, VGS= 4.5V<br>Clamped Inductive Load<br>VDD= 15V, VGS= 4.5V<br>~~ee~~|
|||Q2<br>~~Ft~~|–––<br>~~Ft~~|8.0<br>~~Ft~~|–––<br>~~Ft~~|||
|tr|Rise Time<br>~~Et~~|Q1<br>~~Et~~|–––<br>~~Et~~|9.3<br>~~Et~~|–––<br>~~Et~~|||
|||Q2<br>~~Et~~|–––<br>~~Et~~|14<br>~~Et~~|–––<br>~~Et~~|||
|td(off)|Turn-Off Delay Time<br>~~Et~~|Q1<br>~~Et~~|–––<br>~~Et~~|8.0<br>~~Et~~|–––<br>~~Et~~|||
|||Q2<br>~~Et~~|–––<br>~~Et~~|13<br>~~Et~~|–––<br>~~Et~~|||
|tf|Fall Time<br>~~t=~~|Q1<br>~~t=~~|–––<br>~~t=~~|3.4<br>~~t=~~|–––<br>~~t=~~|||
|||Q2<br>~~t=~~|–––<br>~~t=~~|5.3<br>~~t=~~|–––<br>~~t=~~|||
|Ciss|Input Capacitance<br>~~t=~~<br>~~Et~~|Q1<br>~~t=~~<br>~~Et~~|–––<br>~~t=~~<br>~~Et~~|850<br>~~t=~~<br>~~Et~~|–––<br>~~t=~~<br>~~Et~~|pF|VDS= 15V<br>VGS= 0V<br>ƒ = 1.0MHz|
|||Q2<br>~~Et~~|–––<br>~~Et~~|1790<br>~~Et~~|–––<br>~~Et~~|||
|Coss|Output Capacitance<br>~~Et~~|Q1<br>~~Et~~|–––<br>~~Et~~|190<br>~~Et~~|–––<br>~~Et~~|||
|||Q2<br>~~Et~~|–––<br>~~Et~~|390<br>~~Et~~|–––<br>~~Et~~|||
|Crss|Reverse Transfer Capacitance<br>~~——~~|Q1<br>~~——~~|–––<br>~~——~~|88<br>~~——~~|–––<br>~~——~~|||
|||Q2<br>~~——~~|–––<br>~~——~~|190<br>~~——~~|–––<br>~~——~~|||



## **Typical Characteristics** 

## **Q1 - Control FET** 

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100<br>VGS<br>TOP           10V<br>5.0V<br>Ao 4.5V<br>3.5V<br>10 3.0V<br>2.7V<br>2.5V<br>PT BOTTOM 2.3V<br>1<br>a | ee ee ee ee|<br>0.1 | mean<br>2.3V<br>a ee a | ≤ 60µs PULSE WIDTH I<br>0.01 elie HE Tj = 25°C Ball all<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

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100<br>VGS<br>TOP           10V<br>Ae 5.0V<br>ene), 4.5V<br>3.5V<br>3.0V<br>ee oan 2.7V<br>2.5V<br>| iil BOTTOM 2.3V<br>10 | fie<br>UATHe/A JA eeraaet<br>V/A<br>Zan<br>≤ 60µs PULSE WIDTH<br>2.3V Tj = 150°C<br>1 Ge ALLante | a all|<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Output Characteristics 

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100.0<br>ee ee a ee<br>10.0 ee oe<br>TJ = 150°C<br>Ee eeyyee 1 ee e eeee ee eeee eeeee<br>ee)<br>1.0 T = 25°C<br>J<br>ofp<br>Ee ee VDS = 15V<br>≤ 60µs PULSE WIDTH<br>0.1 aie<br>1.0 2.0 3.0 4.0 5.0<br>VGS, Gate-to-Source Voltage (V)<br>)(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


## **Q2 - Synchronous FET** 

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100<br>VGS<br>TOP           10V<br>5.0V<br>4.5V<br>stl nnil|<br>3.5V<br>10 3.0V<br>2.7V<br>2.5V<br>Ty BOTTOM 2.3V<br>1<br>ee eeee eee<br>0.1 SEC ore Et|<br>2.3V<br>y TT ≤ 60µs PULSE WIDTH I<br>0.01 eliePHI El Tj = 25°C Balll<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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100<br>VGS<br>TOP           10V<br>t——- Fh 5.0V<br>rv 4.5V<br>3.5V<br>3.0V<br>| | | er 2.7V<br>2.5V<br>| AE<br>BOTTOM 2.3V<br>D/A<br>10<br>Ce 7| eeTHTSSee eee el<br>Cea TT | ||<br>2.3V ≤ 60µs PULSE WIDTH<br>Tj = 150°C<br>1 ailTH aul |  ETL |<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Output Characteristics 

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100.0<br>es ee 4<br>10.0 eee/<br>TJ = 150°C<br>Ee eee eyee 2A ee e ee e ee eeee e ee<br>mi se ee<br>1.0 T = 25°C<br>J<br>Pep<br>Ee VDS = 15V<br>≤ 60µs PULSE WIDTH<br>ET<br>0.1 eee ee |<br>1.0 2.0 3.0 4.0 5.0<br>VGS, Gate-to-Source Voltage (V)<br>)(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Transfer Characteristics 

**Fig 6.** Typical Transfer Characteristics 

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## **Typical Characteristics** 

**Q1 - Control FET** 

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**----- Start of picture text -----**<br>
Q2 - Synchronous FET<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10000 10000<br>VGS   = 0V,       f = 1 MHZ VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED Ciss   = Cgs + Cgd,  Cds SHORTED<br>Crss   = Cgd  Crss   = Cgd<br>Teed Coss  = Cds + Cgd l Coss  = C o ds + Cgd c<br>1000 Soo Ciss oo co Ciss co<br>1000<br>Coss<br>100 Crss Coss<br>Crss<br>10 PAE Th 100 Ea e —_| ol<br>1 10 100 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF) C, Capacitance (pF)<br>**----- End of picture text -----**<br>


VDS, Drain-to-Source Voltage (V) 

**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage **Fig 8.** Typical Capacitance vs. Drain-to-Source Voltage 

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12 12<br>10 ID= 7.0A VDS= 24V 10 ID= 8.8A VDS= 24V<br>a VDS= 15V i VDS= 15V |<br>VDS= 6.0V VDS= 6.0V<br>8 8<br>6 6<br>//A- aay Ae<br>4 4<br>ff ff<br>2 Z ee 2 pF<br>0 YJ | | 0 J\ | | ji |<br>0 4 8 12 16 0 5 10 15 20 25 30<br> QG  Total Gate Charge (nC)  QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Gate Charge vs. Gate-to-Source Voltage 

**Fig 10.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>1msec<br>10 100 µsec<br>1<br>10 ms ec<br>0.1 TA = 25°C 100 m sec<br>Tj = 150°C<br>Single Pulse<br>0.01<br>0.1 1 10 100<br>VDS,  Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Safe Operating Area 

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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>100µsec<br>1m s ec<br>10<br>1<br>10 ms ec<br>0.1 TA = 25°C 10 0 msec<br>Tj = 150°C<br>Single Pulse<br>0.01<br>0.1 1 10 100<br>VDS,  Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 12.** Maximum Safe Operating Area 

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**Typical Characteristics** 

**Q1 - Control FET** 

**Q2 - Synchronous FET** 

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**----- Start of picture text -----**<br>
1.5<br>1.5<br>I = 11A<br>ID = 9.1A D<br>VGS = 10V VGS = 10V<br>2 ae ee uy<br>1.0<br>1.0<br>Hetty Ler<br>THLE 0.5 TELE<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ,  Junction Temperature (°C)<br>TJ,  Junction Temperature (°C)<br>  Normalized On-Resistance vs. Temperature Fig 14.   Normalized On-Resistance vs. Temperature<br>100.0<br>100.0<br>T = 150°C TJ = 150°CJ = 150°C= 150°C<br>J  10.0<br>10.0<br>1.0<br>1.0<br>TJ = 25°C TJ = 25°CJ = 25°C= 25°C<br>V = 0V VGS = 0VGS = 0V= 0V<br>GS<br>0.1<br>0.1 ee a ae<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>VSD, Source-to-Drain Voltage (V)<br>VSD, Source-to-Drain Voltage (V)<br>  Typical Source-Drain Diode Forward Voltage Fig 16.   Typical Source-Drain Diode Forward Voltage<br>40 40<br>ID = 8.8A ID = 11A<br>pp ep<br>30<br>30<br>pt | | 2<br>PIN Ff 20 ee<br>TJ = 125°C TJ = 125°C<br>20<br>) \Se Sa<br>10<br>T = 25°C<br>J  TJ = 25°C<br>NS A<br>10 | | | | 0 es<br>2 4 6 8 10 2 4 6 8 10<br>VGS, Gate-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A)<br>ISD, Reverse Drain Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>)Ω )Ω<br>RDS(on),  Drain-to -Source On Resistance (m RDS(on),  Drain-to -Source On Resistance (m<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


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-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ,  Junction Temperature (°C)<br>  Normalized On-Resistance vs. Temperature<br>100.0<br>TJ = 150°CJ = 150°C= 150°C<br>10.0<br>1.0<br>TJ = 25°CJ = 25°C= 25°C<br>VGS = 0VGS = 0V= 0V<br>0.1<br>a ae<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 14.** Normalized On-Resistance vs. Temperature 

**Fig 13.** Normalized On-Resistance vs. Temperature 

**Fig 16.** Typical Source-Drain Diode Forward Voltage 

**Fig 15.** Typical Source-Drain Diode Forward Voltage 

**Fig 17.** Typical On-Resistance vs.Gate Voltage 

**Fig 18.** Typical On-Resistance vs.Gate Voltage 

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**Typical Characteristics** 

**Q1 - Control FET** 

**Q2 - Synchronous FET** 

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**----- Start of picture text -----**<br>
12<br>10<br>TT<br>8<br>ENT<br>CPS<br>6<br>fp<br>4<br>CCCP<br>20 TTTPEEPEEEE<br>25 50 75 100 125 150<br>TJ, Ambient Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


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10<br>10<br>ST TT<br>8<br>8<br>PSO ENT<br>6<br>_ CPS<br>6<br>4 NO fp<br>4<br>TNE CCCP<br>20 UNEE 020 TTTPEEPEEEE<br>25 50 75 100 125 150 25 50 75 100 125 150<br>TJ, Ambient Temperature (°C) TJ, Ambient Temperature (°C)<br>Maximum Drain Current vs. Ambient Temp. Fig 20.   Maximum Drain Current vs. Ambient Temp.<br>2.2 2.2<br>2.0 NOLO 2.0 TNO<br>1.8 SERNGHEEE ID = 250µA 1.8 CCE ID D = 250µA E = 250µA<br>1.6 PCAN 1.61.4 CCAPCAP<br>1.4 CAPE 1.4 CCAP<br>1.2 1.2<br>CCAP PEEP<br>1.0 CCEA 1.0 PCA<br>-75 -50 -25 0 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150<br>TJ, Temperature ( °C ) TJ, Temperature ( °C )<br>Fig 21.   Threshold Voltage vs. Temperature Fig 22.   Threshold Voltage vs. Temperature<br>50 60<br>                 I D                  I D<br>TOP         3.0A 50 TOP         3.8A<br>40                3.5A                4.4A<br>BOTTOM   7.0A BOTTOM   8.8A<br>40<br>cee RE<br>30<br>30<br>20 S--t- VEEL<br>20<br>10<br>10<br>NSE Ne<br>0 ES 0 SSBR<br>25 50 75 100 125 150 25 50 75 100 125 150<br>Starting TJ, Junction Temperature (°C) Starting TJ, Junction Temperature (°C)<br>ID,  Drain Current (A)<br>VGS(th,  Gate threshold Voltage (V) VGS(th,  Gate threshold Voltage (V)<br>EAS, Single Pulse Avalanche Energy (mJ) EAS, Single Pulse Avalanche Energy (mJ)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 19.** Maximum Drain Current vs. Ambient Temp. 

**Fig 20.** Maximum Drain Current vs. Ambient Temp. 

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2.2<br>2.0 TNO<br>1.8 CCE<br>ID D = 250µA<br>CCAPCAP<br>1.61.4 CCAP<br>1.2<br>PEEP<br>PCA<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ, Temperature ( °C )<br>VGS(th,  Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 23.** Maximum Avalanche Energy vs. Drain Current 

**Fig 24.** Maximum Avalanche Energy vs. Drain Current 

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**----- Start of picture text -----**<br>
100<br>Ho D = 0.50  rrr<br>10 0.20<br>0.10<br>err TR<br>a |<br>0.05<br>1 ime SE FY ETN 0.020.01 ee Re A TERR ETAT τJ τJτ1τ pp 1 | R1 R1 τ2Rτ22 R2 ew Rτ | 33 R τ3 3 τR4τ4 R 4 4 τa es Ri (2.2887897.16790636.98193 | °C/W) 0.0001370.014957τι 0.72461(sec) |<br>RY TAAL TE PEEP i) | | i) ee |<br>0.1 ea aE Ci=  Ci τi/Ri i/Ri es 16.07333 26.8<br>SINGLE PULSE Notes:<br>1. Duty Factor D = t1/t2<br>W4mnE ( THERMAL RESPONSE ) ee ee 2. Peak Tj = P dm x Zthja + Ta Hl<br>PT ll<br>0.01<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 25.   Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q1)<br>100<br>ee D = 0.50  aR<br>10 0.20<br>0.10<br>a Ta LF<br>nr OO a a a |<br>0.05<br>1 P 0.02 C eee TTY R1 R1 R2 R2 V R3R 3 T R4 R4 LLL Ri (°C/W) τι (sec)  Ld<br>SSHS 0.01 τJ τ cere J en τa a 1.848416 0.000164<br>ett τ1 τ1 τ2 τ2 τ3τ3 τ4 τ4 es 11.2981834.97452 0.0541580.9598<br>PC AE T | | | | es |<br>0.1 Ci=  Ci τi/Ri i/Ri 14.3858 38.2<br>Se Tn ee cenit —r-rertsm epee<br>Notes:<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthja + Ta<br>0.01 Yt Het yn EE AEH HEI ll Hl<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 26.   Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q2)<br>L<br>S2 1 8 D2<br>G2 Lt=mali= 2 mz 7 D2<br>S1 mn 3 | = 6 D1<br>G1 4 5 D1<br>3 EF<br>--------l<br>Co i} Cin<br>( i)<br>Vo GND Vin<br>Thermal Response ( Z thJA )<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 27.** Layout Diagram 

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Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period ——— + D = —— Period<br>) [©)]    •  CircuitLow  LayoutS ConsiderationsInd | t V t GS=10<br> •<br>-  •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt /<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 > VDD<br>Ro •  •   Driver same type as D.U.T. Vv, + Re-AppliedVoltage Body Diode  Forward Drop ma<br>( a8 •   dv/dt controlled by Rg DD -<br>•<br>D.U.T. - Device Under Test ee ee<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" @|\ t<br>* Veg = 5V for Logic Level Devices<br>Fig 28.  Peak Diode Recovery dv/dt Test Circuit or N-Channel<br>HEXFET ® Power MOSFETs<br>V(BR)DSS(BR)DSS<br>15V ~_— tp -><br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>Ww dt /<br>20VVGS aie<br>tp 0.01 WAY Ω IASAS a<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V(BR)DSS(BR)DSS<br>~_— tp -><br>/<br>IASAS<br>**----- End of picture text -----**<br>


**Fig 29b.** Unclamped Inductive Waveforms 

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**----- Start of picture text -----**<br>
Fig 29a.   Unclamped Inductive Test Circuit<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>¢ 20V Zt<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V<br>DS<br>90% X<br>10%<br>V<br>GS<br>ie le<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


## **Fig 30a.** Switching Time Test Circuit 

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**----- Start of picture text -----**<br>
Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>D.U.T. +-VDS<br>VGS<br>-3mA<br>IG = ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 31a.** Gate Charge Test Circuit 

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**----- Start of picture text -----**<br>
Fig 30b.   Switching Time Waveforms<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>Vgs(th)<br>pengtg<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 31b.** Gate Charge Waveform 

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8 

## **SO-8 Package Outline** (Mosfet & Fetky) 

Dimensions are shown in milimeters (inches) 

## SO-8 Part Marking Information 

**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

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9 

## **SO-8 Tape and Reel** 

Dimensions are shown in millimeters (inches) 

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**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>rir 7.9 ( .312 ) | FEED DIRECTION |<br>NOTES:<br>1.   CONTROLLING DIMENSION : MILLIMETER.<br>2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).<br>3.   OUTLINE CONFORMS TO EIA-481 & EIA-541.<br> 330.00<br>(12.992)<br>  MAX.<br>| YO<br>14.40 ( .566 )<br>12.40 ( .488 )<br>NOTES :<br>1. CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>**----- End of picture text -----**<br>


## **Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, Q1: L = 0.41mH, RG = 25Ω, IAS = 7.0A; Q2: L = 0.38mH, RG = 25Ω, IAS = 8.8A. Pulse width ≤ 400µs; duty cycle ≤ 2%. 

When mounted on 1 inch square copper board. 

θ 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2008 

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10 



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- [Supplier page](https://es.farnell.com/infineon/irf7907trpbf/mosfet-dual-n-ch-30v-11a-soic/dp/2725920RL)
---

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