# Dual MOSFET, N Channel, 30 V, 30 V, 7.8 A, 7.8 A, 0.0174 ohm

![Product image](https://novapart.co/image/farnell:2803418/)

**URL**: https://novapart.co/products/IRF7905TRPBF/dual-mosfet-n-channel-30-v-78-a-00174-ohm
**SKU**: IRF7905TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.7050
**Stock**: 10+

## Description

Transistor Polarity:Dual N Channel; Continuous Drain Current Id:7.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0174ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage V

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET Series |
| Qualification | - |
| Transistor Case Style | SOIC |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 2W |
| Power Dissipation P Channel | 2W |
| Drain Source Voltage Vds N Channel | 30V |
| Drain Source Voltage Vds P Channel | 30V |
| Continuous Drain Current Id N Channel | 7.8A |
| Continuous Drain Current Id P Channel | 7.8A |
| Drain Source On State Resistance N Channel | 0.0174ohm |
| Drain Source On State Resistance P Channel | 0.0174ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2803418/)

## IRF7905PbF 

HEXFET ® Power MOSFET 

## **Applications** 

Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box 

|**VDSS**||**RDS(on) max**|**ID**|
|---|---|---|---|
|**30V**|**Q1 **<br>**Q2 **|**21.8m @VGS = 10V**<br> **17.1m @VGS = 10V**<br>Q<br>Q|**7.8A**<br>**8.9A**<br>~~S|~~<br>~~|~~|



## **Benefits** 

Very Low RDS(on) at 4.5V VGS Low Gate Charge * Fully Characterized Avalanche Voltage and Current : 20V VGS  Max. Gate Rating : Improved Body Diode Reverse Recovery 100% Tested for RG Lead-Free 

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## **Absolute Maximum Ratings** 

||**Parameter**<br>~~pt~~|**Q1 Max.**<br>~~pt~~|**Q2 Max.**|**Units**|
|---|---|---|---|---|
|VDS|Drain-to-Source Voltage<br>~~a~~<br>~~pt~~|30<br>~~a~~<br>~~pt~~||V|
|VGS<br>~~a~~<br>~~———~~|Gate-to-Source Voltage<br>~~pt~~<br>~~a~~<br>~~———ee~~|± 20<br>~~pt~~<br>~~eeoo~~|||
|ID@ TA= 25°C<br>~~a~~<br>~~———~~|Continuous Drain Current, VGS@ 10V<br>~~pt~~<br>~~a~~<br>~~———ee~~|7.8<br>~~pt~~<br>~~ee~~|8.9<br>~~oo~~|A|
|ID@ TA= 70°C<br>~~a~~<br>~~———~~<br>~~a~~|Continuous Drain Current, VGS@ 10V<br>~~a~~<br>~~———ee~~<br>~~a~~|6.2<br>~~ee~~<br>|7.1<br>~~oo~~<br>||
|IDM<br>~~———~~<br>~~a~~|Pulsed Drain Current<br>~~———ee~~<br>~~a~~|62<br>~~ee~~<br>|71<br>~~oo~~<br>||
|PD@TA= 25°C<br>~~———~~<br>~~a~~|Power Dissipation<br>~~——— ee~~<br>~~aa~~|2.0<br>~~ee ~~<br>~~a~~|2.0<br> ~~oo~~<br>~~a~~|W|
|PD@TA= 70°C<br>~~ee~~|Power Dissipation<br>~~a~~<br>~~ee~~|1.3<br>~~a~~|1.3<br>~~a~~||
|~~ee~~|Linear DeratingFactor<br>~~ee~~|0.016|0.016|W/°C|
|TJ<br>TSTG<br>~~ee~~|Operating Junction and<br>Storage Temperature Range<br>~~ee~~|-55  to + 150||°C|



www.irf.com 

1 

07/09/08 

## IRF7905P bF 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Static @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)**<br>IRF7905P|**Static @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**<br>IRF7905P bF||||||ntenational|
|---|---|---|---|---|---|---|---|
||**Parameter**|~~fl~~<br>~~SS~~|**Min.**<br>~~fl~~<br>~~SS~~|**Typ.**<br>~~fl~~<br>~~SS~~|**Max.**<br>~~SS~~|**Units**<br>~~SS~~|**Conditions**<br>~~SS~~|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~Pree~~|Q1&Q2<br>~~Pree~~<br>~~fl~~<br>~~SS~~|30<br>~~Pree~~<br>~~fl~~<br>~~SS~~|–––<br>~~Pree~~<br>~~fl~~<br>~~SS~~|–––<br>~~Pree~~<br>~~SS~~|V<br>~~Pree~~<br>~~SS~~|VGS= 0V,ID= 250µA<br>~~Pree~~<br>~~SS~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~OF~~|Q1<br>~~fl~~<br>~~OF~~<br>~~SS~~|–––<br>~~fl~~<br>~~OF~~<br>~~SS~~|0.024<br>~~fl~~<br>~~OF~~<br>~~SS~~|–––<br>~~OF~~<br>~~SS~~|V/°C<br>~~OF~~<br>~~SS~~|Reference to 25°C, ID= 1mA<br>~~OF~~<br>~~SS~~|
|||Q2<br>~~OF~~<br>~~SS~~|–––<br>~~OF~~<br>~~SS~~|0.024<br>~~OF~~<br>~~SS~~|–––<br>~~OF~~<br>~~SS~~|||
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~OF~~<br>~~a ~~|Q1<br>~~OF~~<br>~~SS~~<br>~~==~~|–––<br>~~OF~~<br>~~SS~~<br>~~I~~<br>~~==~~|17.4<br>~~OF~~<br>~~SS~~<br>~~I~~<br>~~==~~|21.8<br>~~OF~~<br>~~SS~~<br>~~I~~<br>~~==~~|mΩ<br>~~OF~~<br>~~SS~~<br>~~==~~|VGS= 10V,ID= 7.8A<br>~~OF~~<br>~~SS~~<br>~~z~~<br>~~==~~|
||||–––<br>~~I~~<br>~~==~~|23.4<br>~~I~~<br>~~==~~|29.3<br>~~I~~<br>~~==~~||VGS= 4.5V,ID= 6.2A<br>~~z~~<br>~~==~~|
|||Q2<br> ~~==~~|–––<br>~~I~~<br>~~==~~|13.7<br>~~I~~<br>~~==~~|17.1<br>~~I~~<br>~~==~~||VGS= 10V,ID= 8.9A<br>~~z~~<br>~~==~~|
||||–––<br>~~I~~<br>~~==~~|17.1<br>~~I~~<br>~~==~~|21.3<br>~~I~~<br>~~==~~||VGS= 4.5V,ID= 7.1A<br>~~z~~<br>~~==~~|
|VGS(th)|Gate Threshold Voltage<br>~~a~~<br>~~ee~~|Q1&Q2<br>~~a~~<br>~~ee~~|1.35<br>~~a~~<br>~~ee~~|1.8<br>~~a~~<br>~~ee~~|2.25<br>~~a~~<br>~~ee~~|V<br>~~a~~<br>~~ee~~|VDS= VGS, ID= 25µA<br>~~ee~~|
|GS(th)<br>∆VGS(th)/∆TJ<br>~~————~~|Gate Threshold Voltage Coefficient<br>~~ee~~<br>~~————~~|Q1<br>~~ee~~|–––<br>~~ee~~|-5.0<br>~~ee~~|–––<br>~~ee~~|mV/°C<br>~~ee~~||
|||Q2<br>~~ee~~|–––<br>~~ee~~|-5.0<br>~~ee~~|–––<br>~~ee~~|||
|IDSS<br>~~————~~|Drain-to-Source Leakage Current<br>~~ee~~<br>~~————~~|Q1&Q2<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|1.0<br>~~ee~~|µA<br>~~ee~~|VDS= 24V,VGS= 0V<br>~~ee~~|
|||Q1&Q2|–––|–––|150||VDS= 24V,VGS= 0V,TJ= 125°C|
|IGSS<br>~~————~~<br>~~rE~~|Gate-to-Source Forward Leakage<br>~~————~~<br>~~ee~~<br>~~rE~~|Q1&Q2<br>~~ee~~<br>~~rE~~|–––<br>~~ee~~|–––<br>~~ee~~|100<br>~~ee~~|nA<br>~~ee~~|VGS= 20V<br>~~ee~~<br>~~————————~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~<br>~~rE~~|Q1&Q2<br>~~ee~~<br>~~rE~~|–––<br>~~ee~~|–––<br>~~ee~~|-100<br>~~ee~~||VGS= -20V<br>~~ee~~<br>~~————————~~|
|gfs<br>~~rE~~|Forward Transconductance<br>~~rE~~|Q1<br>~~rE~~|15|–––|–––|S|VDS= 15V,ID= 6.2A<br>~~————————~~|
|||Q2<br>~~rE~~|18|–––|–––||VDS= 15V,ID= 7.1A<br>~~————————~~|
|Qg<br>~~rE~~|Total Gate Charge<br>~~rE~~<br>~~———————~~|Q1<br>~~rE~~<br>~~———————~~|–––<br>~~———————~~|4.6<br>~~———————~~|6.9<br>~~———————~~|nC|Q1<br>VDS= 15V<br>VGS= 4.5V, ID= 6.2A<br>Q2<br>VDS= 15V<br>VGS= 4.5V, ID= 7.1A<br>~~————————~~|
|||Q2<br>~~———————~~|–––<br>~~———————~~|6.9<br>~~———————~~|10<br>~~———————~~|||
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~——~~|Q1<br>~~——~~|–––<br>~~——~~|0.9<br>~~——~~|–––<br>~~——~~|||
|||Q2<br>~~——~~|–––<br>~~——~~|1.5<br>~~——~~|–––<br>~~——~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~SS~~|Q1<br>~~SS~~|–––<br>~~SS~~|0.6<br>~~SS~~|–––<br>~~SS~~|||
|||Q2<br>~~SS~~|–––<br>~~SS~~|0.8<br>~~SS~~|–––<br>~~SS~~|||
|Qgd|Gate-to-Drain Charge<br>~~SS~~|Q1<br>~~SS~~|–––<br>~~SS~~|1.7<br>~~SS~~|–––<br>~~SS~~|||
|||Q2<br>~~SS~~|–––<br>~~SS~~|2.5<br>~~SS~~|–––<br>~~SS~~|||
|Qgodr|Gate Charge Overdrive<br>~~OT~~|Q1<br>~~OT~~|–––<br>~~OT~~|1.4<br>~~OT~~|–––<br>~~OT~~|||
|||Q2<br>~~OT~~|–––<br>~~OT~~|2.1<br>~~OT~~|–––<br>~~OT~~|||
|Qsw|Switch Charge (Qgs2+ Qgd)<br>~~—————~~|Q1<br>~~—————~~|–––<br>~~—————~~|2.3<br>~~—————~~|–––<br>~~—————~~|||
|||Q2<br>~~—————~~|–––<br>~~—————~~|3.3<br>~~—————~~|–––<br>~~—————~~|||
|Qoss|Output Charge<br>~~—————~~<br>~~ee~~|Q1<br>~~—————~~<br>~~ee~~|–––<br>~~—————~~<br>~~ee~~|2.9<br>~~—————~~<br>~~ee~~|–––<br>~~—————~~<br>~~ee~~|nC<br>~~ee~~|VDS= 16V, VGS= 0V<br>~~ee~~|
|||Q2<br>~~ee~~|–––<br>~~ee~~|4.5<br>~~ee~~|–––<br>~~ee~~|||
|RG|Gate Resistance<br>~~ee~~<br>~~ee~~|Q1<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|3.1<br>~~ee~~<br>~~ee~~|4.9<br>~~ee~~<br>~~ee~~|Ω<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|
|||Q2<br>~~ee~~|–––<br>~~ee~~|3.1<br>~~ee~~|4.9<br>~~ee~~|||
|td(on)|Turn-On Delay Time<br>~~SS~~|Q1<br>~~SS~~|–––<br>~~SS~~|5.2<br>~~SS~~|–––<br>~~SS~~|ns|ID= 6.2A<br>ID= 7.1A<br>VDD= 15V, VGS= 4.5V<br>VDD= 15V, VGS= 4.5V<br>Clamped Inductive Load<br>Q1<br>Q2|
|||Q2<br>~~SS~~|–––<br>~~SS~~|6.2<br>~~SS~~|–––<br>~~SS~~|||
|tr|Rise Time<br>~~SS~~|Q1<br>~~SS~~|–––<br>~~SS~~|8.3<br>~~SS~~|–––<br>~~SS~~|||
|||Q2<br>~~SS~~|–––<br>~~SS~~|9.3<br>~~SS~~|–––<br>~~SS~~|||
|td(off)|Turn-Off Delay Time<br>~~TT~~|Q1<br>~~TT~~|–––<br>~~TT~~|6.9<br>~~TT~~|–––<br>~~TT~~|||
|||Q2<br>~~TT~~|–––<br>~~TT~~|8.1<br>~~TT~~|–––<br>~~TT~~|||
|tf|Fall Time<br>~~———————~~|Q1<br>~~———————~~|–––<br>~~———————~~|3.4<br>~~———————~~|–––<br>~~———————~~|||
|||Q2<br>~~———————~~|–––<br>~~———————~~|3.4<br>~~———————~~|–––<br>~~———————~~|||
|Ciss|Input Capacitance<br>~~———————~~<br>~~———~~|Q1<br>~~———————~~<br>~~———~~|–––<br>~~———————~~<br>~~———~~|600<br>~~———————~~<br>~~———~~|–––<br>~~———————~~<br>~~———~~|pF|VDS= 15V<br>VGS= 0V<br>ƒ = 1.0MHz|
|||Q2<br>~~———~~|–––<br>~~———~~|910<br>~~———~~|–––<br>~~———~~|||
|Coss|Output Capacitance<br>~~TT~~|Q1<br>~~TT~~|–––<br>~~TT~~|130<br>~~TT~~|–––<br>~~TT~~|||
|||Q2<br>~~TT~~|–––<br>~~TT~~|190<br>~~TT~~|–––<br>~~TT~~|||
|Crss|Reverse Transfer Capacitance<br>~~———~~|Q1<br>~~———~~|–––<br>~~———~~|78<br>~~———~~|–––<br>~~———~~|||
|||Q2<br>~~———~~|–––<br>~~———~~|95<br>~~———~~|–––<br>~~———~~|||



## **Typical Characteristics** 

## **Q1 - Control FET** 

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100<br>VGS<br>TOP           10V<br>5.0V<br>4.5V<br>ae? -of|<br>3.5V<br>10 3.0V<br>2.7V<br>2.5V<br>ee nt BOTTOM 2.3V<br>ae<br>1<br>FEE EEA<br>i |<br>0.1<br>cent<br>≤ 60µs PULSE WIDTH<br>0.01 Pe p 2.3V Til i Tj = 25°C n ail<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>100<br>VGS<br>TOP           10V<br>Ee)FEE AAZee 5.0V4.5V<br>3.5V<br>ape 3.0V<br>2.7V<br>10 er TT 2.5V<br>Wg sett ell BOTTOM 2.3V<br>IZA | rrr tt LT TTT<br>CAT Ei<br>1 TCIM |<br>Ceci<br>try 2.3V EH<br>ee ee eee |<br>≤ 60µs PULSE WIDTH<br>Tj = 150°C<br>0.1<br>CHI Fy ELL<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Output Characteristics 

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**----- Start of picture text -----**<br>
100.0<br>———<br>ee eee eee ee eee<br>PA<br>10.0<br>pit |W | | |<br>TJ = 150°C<br>Fy AAR<br>ee ee) 2 ee eee eee<br>1.0 T = 25°C<br>J<br>a ee eee<br>ae ee ee VDS = 15V<br>≤ 60µs PULSE WIDTH<br>TE<br>0.1 P| yt<br>1.0 2.0 3.0 4.0 5.0 6.0<br>VGS, Gate-to-Source Voltage (V)<br>)(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


## **Q2 - Synchronous FET** 

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**----- Start of picture text -----**<br>
100<br>VGS<br>TOP           10V<br>5.0V<br>4.5V<br>oo 3.5V<br>10 3.0V<br>2.7V<br>2.5V<br>eT BOTTOM 2.3V<br>ee EL tiem<br>1<br>i |<br>a |<br>0.1<br>aa 2.3V<br>≤ 60µs PULSE WIDTH<br>0.01 iePHT El Tj = 25°C aill<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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100<br>VGS<br>TOP           10V<br>FHWA 5.0V<br>ee. ae 4.5V<br>3.5V<br>By Amen 3.0V<br>2.7V<br>10 |_ 2.5V<br>Goo BOTTOM 2.3V<br>ZA Se ee |<br>C A 2.3V TA<br>1 PecoEEoi FH | Ll<br>PEt EEE<br>ae ee eee |<br>≤ 60µs PULSE WIDTH<br>Tj = 150°C<br>0.1<br>CCH Fy ELL<br>0.1 1 10 100<br>VDS,   Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Output Characteristics 

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100.0<br>——— a  ao<br>ee ee ee ee ee ee eee<br>ey oe<br>10.0<br>ae Ae<br>T = 150°C<br>J<br>FA<br>lz | Ap ff}<br>1.0 T J  = 25°C<br>a ee | ee |<br>a eee ee | VDS = 15V<br>≤ 60µs PULSE WIDTH<br>if<br>0.1 | [Lt]<br>1.0 2.0 3.0 4.0 5.0<br>VGS, Gate-to-Source Voltage (V)<br>)(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Transfer Characteristics 

**Fig 6.** Typical Transfer Characteristics 

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**Q1 - Control FET** 

## **Typical Characteristics** 

**Q2 - Synchronous FET** 

**==> picture [484 x 649] intentionally omitted <==**

**----- Start of picture text -----**<br>
10000 10000<br>VGS   = 0V,       f = 1 MHZ VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED Ciss   = Cgs + Cgd,  Cds SHORTED<br>Crss   = Cgd  Crss   = Cgd<br>TT] Coss  = Cds + Cgd fl. Coss  = Cds + Cgd<br>1000 1000<br>Se Seer Ciss eee Se seen Ciss eee<br>Coss Coss<br>100 100<br>Crss Crss<br>10 10<br>1 10 100 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>  Typical Capacitance vs. Drain-to-Source Voltage Fig 8.   Typical Capacitance vs. Drain-to-Source Voltage<br>12 12<br>ID= 6.3A ID= 7.1A<br>10 VDS= 25V 10 VDS= 25V<br>VDS= 16V VDS= 16V<br>VDS= 7.6V VDS= 7.6V<br>8 8<br>6 6<br>4 Og aw e| 4 | frYA<br>Li |<br>20 teAEE | | 20 24fo,yy<br>0 2 4 6 8 10 0 4 8 12 16<br> QG  Total Gate Charge (nC)  QG,  Total Gate Charge (nC)<br>  Typical Gate Charge vs. Gate-to-Source Voltage Fig 10.   Typical Gate Charge vs. Gate-to-Source<br>Voltage<br>1000 1000<br>OPERATION IN THIS AREA  OPERATION IN THIS AREA<br>LIMITED BY R DS(on) LIMITED BY R DS(on)<br>100 100<br>1m s ec 1ms e c<br>10 10 0µsec 10 1 00 µsec<br>1 10 m s ec 1 10 m s ec<br>0.1 TA = 25°C 100 ms ec 0.1 TA = 25°C 100 ms ec<br>Tj = 150°C Tj = 150°C<br>Single Pulse Single Pulse<br>0.01 0.01<br>0.01 0.1 1 10 100 0.01 0.1 1 10 100<br>VDS,  Drain-to-Source Voltage (V) VDS,  Drain-to-Source Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>ID,  Drain-to-Source Current (A) ID,  Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage **Fig 8.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 9.** Typical Gate Charge vs. Gate-to-Source Voltage 

**Fig 11.** Maximum Safe Operating Area 

**Fig 12.** Maximum Safe Operating Area 

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4 

**Typical Characteristics** 

**Q1 - Control FET** 

**Q2 - Synchronous FET** 

**==> picture [486 x 646] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0 2.0<br>ID = 7.8A ID = 8.9A<br>VGS = 10V VGS = 10V<br>1.5 PTE 1.5 TTA<br>itty LL<br>LLL ery LL et<br>1.0 1.0<br>bert tet | ty<br>eT LE peceninneee<br>0.5 PLLLELLLLLLU 0.5 PEEEEEEE E E<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C) TJ , Junction Temperature (°C)<br>  Normalized On-Resistance vs. Temperature Fig 14.   Normalized On-Resistance vs. Temperature<br>100.0 100<br>TJ = 150°C TJ = 150°C<br>10.0 10<br>1.0 1<br>ff ff<br>TJ = 25°C TJ = 25°C<br>VGS = 0V VGS = 0V<br>0.1 a 0.1 eo<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD, Source-to-Drain Voltage (V) VSD, Source-to-Drain Voltage (V)<br>  Typical Source-Drain Diode Forward Voltage Fig 16.   Typical Source-Drain Diode Forward Voltage<br>50<br>50<br>ID = 7.8A ID = 8.9A<br>Wf) 40 ++)<br>40 eV ee<br>PAK | | PL fo ff<br>30 T J  = 125°C 30<br>p\NE i<br>ae ee PAWN<br>TJ = 125°C<br>TJ = 25°C 20<br>20 ee a eee ee ee<br>i ee PON<br>TJ = 25°C<br>10 ee 10 ed |<br>2 4 6 8 10 2 4 6 8 10<br>VGS, Gate-to-Source Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A) ISD, Reverse Drain Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>)<br>) Ω<br>Ω RDS(on),  Drain-to -Source On Resistance (m<br>RDS(on),  Drain-to -Source On Resistance (m<br>RDS(on),  Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 14.** Normalized On-Resistance vs. Temperature 

**Fig 13.** Normalized On-Resistance vs. Temperature 

**Fig 16.** Typical Source-Drain Diode Forward Voltage 

**Fig 15.** Typical Source-Drain Diode Forward Voltage 

**Fig 17.** Typical On-Resistance vs.Gate Voltage 

**Fig 18.** Typical On-Resistance vs.Gate Voltage 

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5 

**Typical Characteristics** 

## **Q1 - Control FET** 

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8<br>we<br>6<br>4 POPPE PELE  EENANCE<br>2 PCEEEELENS<br>PEL ELEN<br>0 PEt it et EL<br>25 50 75 100 125 150<br>TJ, Ambient Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 19.** Maximum Drain Current vs. Ambient Temp. 

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2.2<br>N<br>2.0<br>1.8 ASST I D  = 250µA TP<br>1.6 TELLIN:ue<br>1.4<br>LELLLEN.<br>1.2 PLLELLLLI<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ, Temperature ( °C )<br>Fig 21.   Threshold Voltage vs. Temperature<br>50<br>                 I<br>D<br>TOP         3.0A<br>40                3.5A<br>BOTTOM   6.2A<br>HJ]<br>30<br>A<br>20 AE EE<br>\<br>10<br>A<br>SL<br>0<br>25 50 75 100 125 150<br>Starting TJ, Junction Temperature (°C)<br>VGS(th,  Gate threshold Voltage (V)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 23.** Maximum Avalanche Energy vs. Drain Current 

## **Q2 - Synchronous FET** 

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**----- Start of picture text -----**<br>
10<br>8<br>6<br>HEP<br>4 PEER EEN<br>FREE ENE<br>2<br>0 PpoPEEE EEE N,<br>25 50 75 100 125 150<br>TJ, Ambient Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 20.** Maximum Drain Current vs. Ambient Temp. 

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2.4<br>2.2 TTT LLL.<br>2.0<br>1.8 CASE I D  = 250µA<br>1.6 POONACCCP<br>1.4<br>1.2 Py<br>CELE<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ, Temperature ( °C )<br>VGS(th),  Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 22.** Threshold Voltage vs. Temperature 

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80<br>                 I<br>D<br>TOP         3.2A<br>               3.7A<br>60 BOTTOM   7.1A<br>i,<br>A<br>40<br>A<br>20<br>RR<br>0 SL<br>25 50 75 100 125 150<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 24.** Maximum Avalanche Energy vs. Drain Current 

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**----- Start of picture text -----**<br>
100<br>ee D = 0.50 ama ar a al<br>10 0.20<br>eee emeneny amenent—<br>0.10<br>O ee I a tee SS | PP | I |<br>0.05<br>1 — 0.02 moe R1 R1 R2 R2 R3 R3 R4 R4 es Ri (°C/W) τι (sec) |<br>ETE 0.01 LA pay τJ τJτ1τ1 τ2τ2 τ3 τ3 τ4τ4 τa es 2.1953558.47032636.46787 0.0001490.0192870.63002 |<br>eT i) i) | | ee |<br>0.1 a RET Ci=  eee Ci τi/Ri i/Ri 15.37789 ae 15.12 |<br>SINGLE PULSE Notes:<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>LAA | a a a 2. Peak Tj = P dm x Zthja + Ta Ml<br>a ee a ll<br>0.01<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 25.   Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q1)<br>100<br>me D = 0.50 a a | at<br>10 0.20<br>0.10<br>eh PR<br>0.05<br>1 ime ee 0.02 eeea re A  a a oes — 0  ot R1 R1 | R2 R2 R3R 3 R4 R4 Ri (°C/W | ) τι (sec) |<br>0.01 | τJ τJ wep τa 2.073115 0.000216 |<br>PATI IE τ1 τ1 τ2τ2 τ3 τ3 τ4τ4 9.06902836.96639 | 0.0285920.75582<br>Pt PA i) | | i) |<br>0.1 Ci=  Ci τi/Ri i/Ri 14.40736 21<br>Se Tn ee rene —reretsn—t-eee ere<br>SINGLE PULSE Notes:<br>YA TT ( THERMAL RESPONSE ) a 1. Duty Factor D = t1/t2 Ml<br>2. Peak Tj = P dm x Zthja + Ta<br>AA TT ET PTE ll<br>0.01<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1, Rectangular Pulse Duration (sec)<br>Fig 26.   Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q2)<br>L<br>S2 1 8 D2<br>G2 Lt= 2 i=mz 7 D2<br>S1 oa 3 | = 6 D1<br>G1 4 5 D1<br>—2 E<br>--------|<br>Co i} Cin<br>i}<br>Vo GND Vin<br>Thermal Response ( Z thJA )<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 27.** Layout Diagram 

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**==> picture [412 x 345] intentionally omitted <==**

**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period ——— + D = —— Period<br>) [©)]    •  CircuitLow  LayoutStray ConsiderationsInd | t V t GS=10<br> •<br>-  •   Low Leakage Inductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [1] Current Transformer - ® + Current r Current di/dt AN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 > VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Ro ( a8 •   dv/dt controlled by Rg Vpp -<br>•<br>D.U.T. - Device Under Test ee ee<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" @|\ t<br>* Veg = 5V for Logic Level Devices<br>Fig 28.  Peak Diode Recovery dv/dt Test Circuit or N-Channel<br>HEXFET ® Power MOSFETs<br>V(BR)DSS(BR)DSS<br>15V << tp ><br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>Ww dt /<br>20VVGS aie<br>tp 0.01 WAY Ω IASAS a<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V(BR)DSS(BR)DSS<br><< tp ><br>/<br>IASAS<br>**----- End of picture text -----**<br>


**Fig 29b.** Unclamped Inductive Waveforms 

## **Fig 29a.** Unclamped Inductive Test Circuit 

**==> picture [147 x 98] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20V ee<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


## **Fig 30a.** Switching Time Test Circuit 

**==> picture [134 x 131] intentionally omitted <==**

**----- Start of picture text -----**<br>
Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>D.U.T. +-VDS<br>VGS<br>-3mA<br>IG = ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 31a.** Gate Charge Test Circuit 

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**----- Start of picture text -----**<br>
V<br>DS<br>90%<br>10%<br>XA<br>V<br>GS<br>td(on) tr td(off) tf<br>Fig 30b.   Switching Time Waveforms<br>Id<br>Vds<br>Vgs<br>Vgs(th)<br>pengtg<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 31b.** Gate Charge Waveform 

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## **SO-8 Package Outline** (Mosfet & Fetky) 

Dimensions are shown in milimeters (inches) 

## SO-8 Part Marking Information 

**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

www.irf.com 

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## **SO-8 Tape and Reel** 

Dimensions are shown in millimeters (inches) 

**==> picture [217 x 290] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>rir 7.9 ( .312 ) | FEED DIRECTION |<br>NOTES:<br>1.   CONTROLLING DIMENSION : MILLIMETER.<br>2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).<br>3.   OUTLINE CONFORMS TO EIA-481 & EIA-541.<br> 330.00<br>(12.992)<br>  MAX.<br>| YO<br>14.40 ( .566 )<br>12.40 ( .488 )<br>NOTES :<br>1. CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>**----- End of picture text -----**<br>


## **Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, Q1: L = 0.62mH RG = 25Ω, IAS = 6.2A; Q2: L = 0.72mH RG = 25Ω, IAS = 7.1A. Pulse width ≤ 400µs; duty cycle ≤ 2%. 

When mounted on 1 inch square copper board. 

θ 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2008 

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- [Supplier page](https://es.farnell.com/infineon/irf7905trpbf/mosfet-dual-n-ch-30v-7-8a-soic/dp/2803418)
---

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