# Power MOSFET, N Channel, 30 V, 21 A, 3300 µohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2777398/)

**URL**: https://novapart.co/products/IRF7862TRPBF/power-mosfet-n-channel-30-v-21-a-3300-ohm-soic
**SKU**: IRF7862TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3340
**Stock**: 1000+
**Lead Time**: 99 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.35V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 21A |
| Drain Source On State Resistance | 3300µohm |
| Gate Source Threshold Voltage Max | 2.35V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2777398/)

PD -972758 IRF7862PbF HEXFET ® Power MOSFET 

## **Applications** 

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VDSS RDS(on) max Qg<br>30V 3.3m @VGS = 10V 30nC<br>ee<br>A<br>A<br>S 1 8 D<br>S 2 7 D<br>S 3 6 D<br>G 4 5 D<br>SO-8<br>Top View<br>**----- End of picture text -----**<br>


Synchronous MOSFET for Notebook Processor Power Synchronous Rectifier MOSFET for Isolated DC-DC Converters 

## **Benefits** 

Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 

20V VGS  Max. Gate Rating 100% tested for Rg Lead-Free 

## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-to-Source Voltage<br>~~a~~<br>~~G~~|30<br>~~a~~<br>~~G~~|V<br>~~a~~<br>~~G~~<br>~~a~~|
|VGS|Gate-to-Source Voltage<br>~~a~~|± 20<br>~~a~~||
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V<br>~~a~~<br>~~a~~<br>~~G~~<br>~~——_——————~~|21<br>~~a~~<br>~~a~~<br>~~G~~<br>~~——_——————~~|A<br>~~a~~<br>~~a~~<br>~~G~~<br>~~——_——————~~<br>~~a~~|
|ID@ TA= 70°C|Continuous Drain Current, VGS@ 10V<br>~~——_——————~~|17<br>~~——_——————~~||
|IDM|Pulsed Drain Current<br>~~——_——————~~<br>~~a~~|170<br>~~——_——————~~<br>~~a~~||
|PD@TA= 25°C|Power Dissipation<br>~~——_——————~~<br>~~a~~<br>~~a~~|2.5<br>~~——_——————~~<br>~~a~~<br>~~a~~|W<br>~~——_——————~~<br>~~a~~<br>~~a~~<br>~~a~~|
|PD@TA= 70°C|Power Dissipation<br>~~a~~|1.6<br>~~a~~||
||Linear Derating Factor<br>~~a~~|0.02<br>~~a~~|W/°C<br>~~a~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 150|°C|



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJL|Junction-to-Drain Lead|–––|20|°C/W<br>~~a~~|
|RθJA|Junction-to-Ambient<br>~~a~~|–––<br>~~a~~|50<br>~~a~~||



Notes through  are on page 9 

www.irf.com 

1 06/04/09 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>~~GO~~|**Min.**<br>~~GO~~|**Typ.**<br>~~I~~|**Max. **<br>~~GOGO~~|**Units**<br>~~GOGO~~|**Conditions**<br>~~GOGO~~|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~eG~~<br>~~GO~~|30<br>~~eG~~<br>~~GO~~|–––<br>~~eG~~<br>~~I~~|–––<br>~~eG~~<br>~~GOGO~~|V<br>~~eG~~<br>~~GOGO~~|VGS= 0V, ID= 250µA<br>~~eG~~<br>~~GOGO~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~GO~~|–––<br>~~GO~~<br>~~|~~|0.023<br>~~I ~~<br>~~DCO~~<br>~~|~~|–––<br> ~~GOGO~~<br>~~DCO~~|V/°C<br>~~GOGO~~<br>~~DCO~~|Reference to 25°C, ID= 1mA<br>~~GOGO~~<br>~~DCO—~~|
|RDS(on)|Static Drain-to-Source On-Resistance|–––<br>~~|~~|3.0<br><br>~~|~~|3.3<br>|mΩ<br>|VGS= 10V, ID= 20A<br>~~—~~|
|||–––<br>~~|~~<br>~~Gs~~|3.7<br><br>~~|~~<br>~~sD~~|4.5<br><br>~~sD~~||VGS= 4.5V, ID= 16A<br>~~—~~<br>®|
|VGS(th)|Gate Threshold Voltage<br>~~en~~|1.35<br>~~|~~<br>~~en~~<br>~~Gs~~|–––<br><br>~~|~~<br>~~en~~<br>~~sD~~|2.35<br><br>~~en~~<br>~~sD~~<br>~~OD~~|V<br><br>~~en~~<br>~~GOGO~~|VDS= VGS, ID= 100µA<br>~~—~~<br>~~en~~<br>~~GOGO~~|
|∆VGS(th)|Gate Threshold Voltage Coefficient<br>~~en~~<br>~~GD~~|–––<br>~~en~~<br>~~Gs ~~<br>~~GD~~<br>~~|~~|-5.4<br>~~en~~<br> ~~sD~~<br>~~GD~~<br>~~|~~|–––<br>~~en~~<br>~~sD~~<br>~~GD~~<br>~~OD~~<br>~~]~~<br>|mV/°C<br>~~en~~<br>~~GD~~<br>~~GOGO~~<br>~~]~~|VDS= VGS, ID= 250µA<br>~~en~~<br>~~GD~~<br>~~GOGO~~|
|IDSS|Drain-to-Source Leakage Current<br>~~GD~~|–––<br>~~GD~~<br>~~|~~|–––<br>~~GD~~<br>~~|~~|1.0<br>~~GD~~<br>~~OD~~<br>~~]~~<br>|µA<br>~~GD~~<br>~~GOGO~~<br>~~]~~|VDS= 24V, VGS= 0V<br>~~GD~~<br>~~GOGO~~|
|||–––<br>~~|~~|–––<br>~~||~~|150<br>~~]~~<br>~~|~~||VDS= 24V, VGS= 0V, TJ= 125°C|
|IGSS|Gate-to-Source Forward Leakage<br>~~rs~~|–––<br>~~|~~<br>~~rs~~|–––<br>~~||~~<br>~~rs~~<br>~~ee~~|100<br>~~]~~<br>~~|~~<br>~~rs~~|nA<br>~~]~~<br>~~rs~~<br>~~GOGO~~|VGS= 20V<br>~~rs~~|
||Gate-to-Source Reverse Leakage<br>~~rs~~<br>~~GD~~|–––<br>~~rs~~<br>~~a~~<br>~~GD~~|–––<br>~~rs~~<br>~~a~~<br>~~ee~~<br>~~GD~~|-100<br>~~rs~~<br>~~a~~<br>~~GOGO~~||VGS= -20V<br>~~rs~~<br>~~GOGO~~|
|gfs|Forward Transconductance<br>~~rs~~<br>~~GD~~|87<br>~~rs~~<br>~~a~~<br>~~GD~~|–––<br>~~rs~~<br>~~a~~<br>~~ee~~<br>~~GD~~|–––<br>~~rs~~<br>~~a~~<br>~~GOGO~~|S<br>~~rs~~<br>~~GOGO~~|VDS= 15V, ID= 16A<br>~~rs~~<br>~~GOGO~~|
|Qg|Total Gate Charge<br>~~GD~~<br>~~a~~|–––<br>~~GD~~<br>~~a~~|30<br>~~GD ~~<br>~~a~~|45<br> ~~GOGO~~<br>~~a~~|nC<br>~~GOGO~~<br>~~GOGO~~|See Figs. 15 & 16<br>VDS= 15V<br>VGS= 4.5V<br>ID= 16A<br>~~GOGO~~<br>~~GOGO~~|
|Qgs1|Pre-Vth Gate-to-Source Charge|–––|7.5|–––|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~a~~|–––<br>~~a~~|3.1<br>~~a~~|–––<br>~~a~~|||
|Qgd|Gate-to-Drain Charge|–––|9.8|–––|||
|Qgodr|Gate Charge Overdrive<br>~~a~~|–––<br>~~a~~|9.6<br>~~a~~|–––<br>~~a~~|||
|Qsw|Switch Charge (Qgs2+ Qgd)|–––<br>~~GO~~|12.9<br>~~RD OD~~|–––<br>~~RD OD~~|||
|Qoss|Output Charge<br>~~en~~|–––<br>~~en~~<br>~~GO~~<br>~~Gs~~|18<br>~~en~~<br>~~RD OD~~<br>~~rs~~|–––<br>~~en~~<br>~~RD OD~~<br>|nC<br>~~en~~<br>~~GOGO~~<br>~~GO~~|VDS= 16V, VGS= 0V<br>~~en~~<br>~~GOGO~~<br>~~GO~~|
|Rg|Gate Resistance<br>~~en~~|–––<br>~~GO ~~<br>~~en~~<br>~~Gs~~|1.0<br> ~~RD OD~~<br>~~en~~<br>~~rs~~|1.6<br>~~RD OD~~<br>~~en~~<br>|Ω<br>~~GOGO~~<br>~~en~~<br>~~GO~~|~~GOGO~~<br>~~en~~<br>~~GO~~|
|td(on)|Turn-On DelayTime<br>~~en~~<br>~~ee~~|–––<br>~~en~~<br>~~Gs~~<br>~~ee~~|16<br>~~en~~<br>~~rs ~~<br>~~ee~~|–––<br>~~en~~<br> <br>~~ee~~|ns<br>~~en~~<br> ~~GO~~<br>~~a~~|See Fig. 18<br>VDD= 15V, VGS= 4.5V<br>ID= 16A<br>RG= 1.8Ω<br>~~en~~<br>~~GO~~|
|tr|Rise Time|–––|19|–––|||
|td(off)|Turn-Off DelayTime<br>~~a~~|–––<br>~~a~~|18<br>~~a~~|–––<br>~~a~~|||
|tf|Fall Time|–––|11|–––|||
|Ciss|Input Capacitance<br>~~a~~|–––<br>~~a~~|4090<br>~~a~~|–––<br>~~a~~|pF<br>~~a~~|ƒ= 1.0MHz<br>VDS= 15V<br>VGS= 0V|
|Coss<br>~~a~~|Output Capacitance<br>~~a~~|–––<br>~~a~~|810<br>~~a~~|–––<br>~~a~~|||
|Crss<br>~~a~~|Reverse Transfer Capacitance<br>~~a~~|–––<br>~~a~~|390<br>~~a~~|–––<br>~~a~~|||



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1000 1000<br>≤Tj = 25°C60µs PULSE WIDTH TOP           VGS10V5.0V ≤Tj = 150°C60µs PULSE WIDTH TOP           VGS10V5.0V<br>100 4.5V3.5V 4.5V3.5V<br>3.0V 3.0V<br>2.7V 2.7V<br>2.5V 100 2.5V<br>10 C aeotn BOTTOM 2.3V f r BOTTOM 2.3V<br>= W O<br>1 l l V ———<br>10<br>Pett SSS. eee<br>0.1<br>S e ee Pe ee<br>2.3V<br>2.3V<br>0.01 e ee 1 all<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 1.6<br>VDS = 15V ID = 21A<br>≤60µs PULSE WIDTH VGS = 10V<br>1.4<br>100 ——— — ELL<br>ee ee Ay, ee 1.2 Wa<br>10 TJ = 150°C TJ = 25°C<br>=—— [fA] S s 1.0 L AL<br>ee yw<br>1 ee ee ee pZ<br>———eee e y—ETE—E—E—E————— oo 0.8 nZ|O Annnnnne<br>ee/ ey ee ee<br>0.1 eeee yeoe ee ee 0.6<br>1 2 3 4 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance vs. Temperature 

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**==> picture [215 x 483] intentionally omitted <==**

**----- Start of picture text -----**<br>
100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>C  = C<br>rss   gd<br>C = C + C<br>oss   ds  gd<br>10000<br>C<br>iss<br>1000 SEE Coss TT<br>C<br>rss<br>PAINE FA<br>100<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance vs.<br>Drain-to-Source Voltage<br>1000<br>100<br>T = 150°C<br>J<br>T = 25°C<br>10 J<br>VGS = 0V<br>1.0<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, Source-to-Drain Voltage (V)<br>C, Capacitance (pF)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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**----- Start of picture text -----**<br>
5.0<br>ID= 16A<br>VDS= 24V<br>4.0<br>VDS= 15V<br>3.0<br>2.0<br>1.0 Z EEE<br>0.0<br>0 5 10 15 20 25 30 35<br> QG,  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>100µsec<br>1msec<br>10<br>10msec<br>1<br>TA = 25°C<br>Tj = 150°C<br>Single Pulse<br>0.1<br>0.1 1.0 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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**----- Start of picture text -----**<br>
25 2.5<br>2.3<br>20<br>T TT) A e<br>2.0<br>15<br>P SN] P HP<br>1.8<br>ID = 250µA<br>10 a N o N<br>1.5<br>r N l ori NEE<br>5<br>1.3<br>0 et | LN\ 1.0 LB ETNE ELLLIN<br>25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150<br> TA , Ambient Temperature (°C) TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Threshold Voltage vs. Temperature<br>Ambient Temperature<br>100<br>D = 0.50<br>10 0.20<br>0.10<br>0.05<br>1 0.02<br>0.01<br>SINGLE PULSE<br>0.1 ( THERMAL RESPONSE )<br>0.01 R 1 R 1 R 2 R2 R 3 R 3 R 4 R 4 Ri (°C/W)    τi (sec) P DM<br>0.001 τJ τJτ1 τ1 τ2 τ2 τ3 τ3 τ4 τ4 τA τA 1.242       0.000172 4.759       0.03139728.506     1.2211 Notes: t1 t2<br>Ci= τi/R i 1. Duty factor D = t   / t 1 2<br>Ci= τi/Ri 15.507     44.5 2. Peak TJ = P DM x  Z thJA + TA<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>ID,  Drain Current (A)<br>VGS(th), Gate Threshold Voltage (V)<br>Thermal Response ( Z thJA ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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12 1600<br>ID = 21A ID<br>1400<br>TOP         1.0A<br>10 1.4A<br>1200<br>BOTTOM 16A<br>HL o t<br>ARLE} 1000 G EE<br>8<br>800<br>6 TJ = 125°C<br>600<br>PS N e<br>CHEATER w eaeeneee<br>400<br>4<br>eeeH+Hy R RS<br>200<br>T = 25°C<br>J<br>2 iors 0 E SSE<br>2 3 4 5 6 7 8 9 10 11 12 25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>VGS, Gate -to -Source Voltage  (V)<br>Fig 12.  On-Resistance vs. Gate Voltage Fig 13.   Maximum Avalanche Energy<br>vs. Drain Current<br>V(BR)DSS<br>15V tp<br>L<br>VCC<br>VDS L DRIVER DUT<br>0<br>RG D.U.T + 20K1K S<br>m - [V][DD] /<br>IAS A<br>20V<br>tp 0.01Ω IAS<br>Fig 14.   Unclamped Inductive Test Circuit Fig 15.   Gate Charge Test Circuit<br>and Waveform<br>Id<br>Vds<br>Vgs<br>Vgs(th)<br>INA<br>Qgodr Qgd Qgs2 Qgs1<br>Fig 16.    Gate Charge Waveform<br>) Ω<br>RDS(on),  Drain-to -Source On Resistance (m EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period ——— — D = —— Period<br>) [©)]    • Circuit Layout Considerations ) t V | GS=10V<br>•<br>| =] - LowGround StrayPla I n eductance<br>•   Low Leakage Inductance a) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [l] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 _ VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( 4 •   dv/dt controlled by Rg Vop - Inductor Curent<br>•<br>D.U.T. - Device Under Test SOO |<br>Isp controlled by Duty Factor "D" @ Ripple  ≤ 5% ISD<br>* Vg = 5V for Logic Level Devices<br>Fig 17. eak Diode Recovery dv/dt Test Circuit or N-Channel<br>HEXFET ® ower MOSFETs<br>Rp VDS<br>90%<br>Ves | VV |<br>nN ° D.U.T. +- Vpp ||<br>10%<br>Lt /\_<br>DutyPulseNes FactorWidth  0.1 % 1 s VGS +la | >|aan,<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


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Fig 18a.   Switching Time Test Circuit<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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## **SO-8 Package Outline** (Mosfet & Fetky) 

Dimensions are shown in milimeters (inches) 

## SO-8 Part Marking Information 

**Note: For the most current drawing please refer to IR website at http://www.irf.com/package/** 

www.irf.com 

8 

**SO-8 Tape and Reel** Dimensions are shown in millimeters (inches) 

**==> picture [173 x 236] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>OOO 6 a)<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )7.9 ( .312 ) | FEED DIRECTION<br>NOTES:<br>1.   CONTROLLING DIMENSION : MILLIMETER.<br>2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).<br>3.   OUTLINE CONFORMS TO EIA-481 & EIA-541.<br> 330.00<br>(12.992)<br>  MAX.<br>VAG<br>14.40 ( .566 )<br>12.40 ( .488 )<br>NOTES :<br>1. CONTROLLING DIMENSION : MILLIMETER.<br>2. OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>**----- End of picture text -----**<br>


Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 2.7mH, RG = 25Ω, IAS = 16A. Pulse width ≤ 400µs; duty cycle ≤ 2%. 

When mounted on 1 inch square  copper board. 

Rθ is measured at TJ of approximately 90°C. 

## **Revision History** 

|**Date**|**Comment**|
|---|---|
|6/4/2009|Maximum Rds(on) at Vgs=10V changed from 3.7mΩto 3.3mΩ. All other parameters are unchanged.|



## **Note: For the most current drawing please refer to IR website at http://www.irf.com/package** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 06/2009 

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9 



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---

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