# Power MOSFET, HEXFET®, N Channel, 100 V, 8.3 A, 0.018 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2776815/)

**URL**: https://novapart.co/products/IRF7853TRPBF/power-mosfet-hexfet-n-channel-100-v-83-a-0018-ohm
**SKU**: IRF7853TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5190
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:8.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0144ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.9V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 8.3A |
| Drain Source On State Resistance | 0.018ohm |
| Gate Source Threshold Voltage Max | 4.9V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2776815/)

## IRF7853PbF 

HEXFET Power MOSFET 

## **Applications** 

> : Primary Side Switch in Bridge Topology in Universal Input (36-75Vin) Isolated DC-DC Converters 

Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DC Converters 

Secondary Side Synchronous Rectification Switch for 15Vout ° Suitable for 48V Non-Isolated ° Synchronous Buck DC-DC Applications 

## **Benefits** 

Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) 

|**VDSS**|**RDS(on) max**|**ID**|
|---|---|---|
|**100V**<br>~~ee~~|**18m @VGS = 10V**|**8.3A**|



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A<br>A<br>S 1 8 D<br>2 7<br>S 1 TE D<br>3 6<br>S mi in D<br>4 5<br>G we in D<br>SO-8<br>Top View<br>**----- End of picture text -----**<br>


Fully Characterized Avalanche Voltage and Current 

## **Absolute Maximum Ratings** 

|~~es~~<br>~~es~~<br>~~—.~~|**Parameter**<br>~~es~~<br>~~+>$Y~~|**Max.**<br>~~es~~<br>~~$Y~~|**Units**<br>~~es~~|
|---|---|---|---|
|VDS<br>~~es~~<br>~~es~~<br>~~—.~~|Drain-to-Source Voltage<br>~~es~~<br>~~+>$Y~~|100<br>~~es~~<br>~~$Y~~|V<br>~~es~~<br>~~ie~~|
|VGS<br>~~es~~<br>~~—.~~<br>~~——~~|Gate-to-Source Voltage<br>~~+>$Y~~<br>~~——~~<br>~~ee~~|± 20<br>~~$Y~~<br>~~ie~~||
|ID@ TA= 25°C<br>~~—. ~~<br>~~——~~<br>~~es~~|Continuous Drain Current, VGS@ 10V<br> ~~+> $Y~~<br>~~——~~<br>~~ee~~|8.3<br>~~$Y~~<br>~~ie~~|A<br>~~ie~~|
|ID@ TA= 70°C<br>~~——~~<br>~~es~~<br>~~es~~|Continuous Drain Current, VGS@ 10V<br>~~——~~<br>~~ee~~<br>~~©~~|6.6<br>~~ie~~||
|IDM<br>~~——~~<br>~~es~~<br>~~es~~<br>~~es~~|Pulsed Drain Current<br>~~——~~<br>~~ee~~<br>~~©~~|66<br>~~ie~~||
|PD@TA= 25°C<br>~~——~~<br>~~es~~<br>~~es~~<br>~~es~~|Maximum Power Dissipation<br>~~——~~<br>~~ee~~<br>~~©~~|2.5<br>~~ie~~|W<br>~~ie~~|
|~~es~~<br>~~es~~|Linear DeratingFactor|0.02|W/°C|
|dv/dt<br>~~es~~|Peak Diode Recoverydv/dt|5.1|V/ns|
|TJ<br>TSTG<br>~~a~~|Operating Junction and<br>Storage Temperature Range|-55  to + 150|°C|



> Notes ® hrough  are on page 8 @ www.irf.com 

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## IRF7853PbF 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>100<br>–––<br>–––<br>V<br>∆V(BR)DSS/∆TJ<br>Breakdown Voltage Temp. Coefficient<br>–––<br>0.11<br>–––<br>V/°C<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>14.4<br>18<br>mΩ<br>VGS(th)<br>Gate Threshold Voltage<br>3.0<br>–––<br>4.9<br>V<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>µA<br>–––<br>–––<br>250<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>**Dynamic @ TJ = 25°C(unless otherwise specified)**<br>VGS= 20V<br>VGS= -20V<br>**Conditions**<br>VGS= 0V,ID= 250µA<br>Reference to 25°C,ID= 1mA<br>VGS= 10V,ID= 8.3A<br>VDS= VGS,ID= 100µA<br>VDS= 100V,VGS= 0V<br>VDS= 100V,VGS= 0V,TJ= 125°C<br>~~eses~~<br>~~GD QO~~<br>~~esRs~~<br>~~GO QO~~<br>~~esRs~~<br>~~I QO~~<br>~~esRs~~<br>~~sD QO~~<br>~~esRs~~<br>~~I~~<br>~~QO~~<br>~~EE~~<br>~~PTT PO~~<br>~~_———————~~<br>~~EE~~<br>~~ee~~<br>~~ee~~<br>~~Pp~~|
|---|
|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>gfs<br>Forward Transconductance<br>11<br>–––<br>–––<br>S<br>Qg<br>Total Gate Charge<br>–––<br>28<br>39<br>Qgs<br>Gate-to-Source Charge<br>–––<br>7.8<br>–––<br>nC<br>Qgd<br>Gate-to-Drain("Miller")Charge<br>–––<br>10<br>–––<br>RG<br>Gate Resistance<br>–––<br>1.4<br>–––<br>Ω<br>td(on)<br>Turn-On DelayTime<br>–––<br>13<br>–––<br>tr<br>Rise Time<br>–––<br>6.6<br>–––<br>td(off)<br>Turn-Off DelayTime<br>–––<br>26<br>–––<br>ns<br>tf<br>Fall Time<br>–––<br>6.0<br>–––<br>Ciss<br>Input Capacitance<br>–––<br>1640<br>–––<br>Coss<br>Output Capacitance<br>–––<br>310<br>–––<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>71<br>–––<br>pF<br>Coss<br>Output Capacitance<br>–––<br>1600<br>–––<br>Coss<br>Output Capacitance<br>–––<br>180<br>–––<br>Cosseff.<br>Effective Output Capacitance<br>–––<br>320<br>–––<br>VGS= 0V,VDS= 1.0V, ƒ= 1.0MHz<br>VGS= 0V,VDS= 80V, ƒ= 1.0MHz<br>VGS= 0V,VDS= 0V to 80V<br>VGS= 10V<br>VDD= 50V<br>ID= 5.0A<br>RG= 6.2Ω<br>VGS= 10V<br>VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz<br>**Conditions**<br>VDS= 25V,ID= 5.0A<br>ID= 5.0A<br>VDS= 50V<br>~~rsRe~~<br>~~GO QO~~<br>~~esRs~~<br>~~sn QO~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~®~~<br>~~esRs~~<br>~~sn QO~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~®~~<br>~~es~~<br>~~es~~<br>~~esRe~~<br>~~esRe~~<br>~~PO~~<br>~~esRe~~<br>~~PO~~<br>~~esRe~~|
|**Avalanche Characteristics**|
|**Parameter**<br>**Units**<br>EAS<br>Single Pulse Avalanche Energy<br>mJ<br>IAR<br>Avalanche Current<br>A<br>**Max.**<br>610<br>5.0<br>**Typ.**<br>–––<br>–––<br>~~esQO~~<br>~~esQO~~<br>~~esQO~~<br>~~(~~|
|**Diode Characteristics**|
|D<br>**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>IS<br>Continuous Source Current<br>–––<br>–––<br>2.3<br>(BodyDiode)<br>A<br>MOSFET symbol<br>showing  the<br>**Conditions**<br>~~rn~~<br>~~ee~~|
|G<br>ISM<br>Pulsed Source Current<br>–––<br>–––<br>66<br>integral reverse|
|S<br>(BodyDiode)<br>p-njunctiondiode.|
|2<br>www.irf.com<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>trr<br>Reverse RecoveryTime<br>–––<br>45<br>68<br>ns<br>Qrr<br>Reverse RecoveryCharge<br>–––<br>84<br>130<br>nC<br>ton<br>Forward Turn-On Time<br>Intrinsic turn-on time is negligible (turn-on is dominated byLS+LD)<br>TJ= 25°C, IS= 5.0A, VGS= 0V<br>TJ= 25°C, IF= 5.0A, VDD= 25V<br>di/dt = 100A/µs<br>~~esRs~~<br>~~sD GOO~~<br>~~a~~<br>~~re~~<br>~~esRs~~<br>~~@~~<br>~~eses~~|



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## IRF7853PbF 

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100 100<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>10 7.0V6.0V Vaatiet Cerri | TH a llVomail 7.0V6.0V<br>5.5V 5.5V<br>5.0V zit Epil ==auatl 10 |At 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br>1<br>=e tl a 26, a<br>atlPeeema ETEecatl|| el HM 1 ail CL 4.5V —<br>0.1<br>ce TM aii eel SEEntlll<br>≤ 60µs PULSE WIDTH ≤ 60µs PULSE WIDTH<br>eee 4.5V teeeelll Tj = 25°C WY Tj = 150°C<br>0.01 0.1<br>0.01 0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>100.0 2.5<br>ID = 8.3A<br>VGS = 10V<br>lia) TJ = 150°C 2.0 LT<br>10.0<br>1 | i<br>1.5<br>1.0 [_ve TJ = 25°C TC<br>SS aa === 1.0 4yy<br>VDS = 25V<br>≤ 60µs PULSE WIDTH<br>0.1 Ay<br>0.5<br>3.0 4.0 5.0 6.0 | 7.0 ) CLT<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>VGS, Gate-to-Source Voltage (V)<br>TJ , Junction Temperature (°C)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>)(Α<br>ID, Drain-to-Source Current<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance vs. Temperature 

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## IRF7853PbF 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>= Crss   = Cgd<br>10000 _ C oss   = C ds  + C gd<br>Ciss<br>1000 SCH TE =|<br>Coss<br>ene See ee<br>100 SLUT Crss uT<br>ae en<br>FEE<br>PEE EEE<br>10<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance vs.<br>Drain-to-Source Voltage<br>100.0 ——<br>ee<br>TJ = 150°C<br>10.0 pf |<br>| AA A)<br>1.0 A TEP dS<br>TJ = 25°C<br>e t<br>a ee ie<br>VGS = 0V<br>ee a e<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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20<br>ID= 5.0A<br>VDS= 80V<br>Sf<br>16 VDS= 50V<br>VDS= 20V SS<br>12 Pr ae<br>8<br>Are<br>a An<br>40 J) | fof<br>0 10 20 30 40 50<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000<br>ee OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>=i: eer<br>100<br>Seer renee ner" EEE<br>100µsec<br>OLAS<br>10<br>1m se c<br>2S<br>10 ms ec<br>pop A s<br>1 Soy<br>Tc = 25°C<br>Tj = 150°C TT * TT TT TTT<br>Single Pulse<br>0.1 eR<br>0 1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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## IRF7853PbF 

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10<br>Rp<br>8 aeNY ne aV l 8 D.U.T. -<br>6 Ss | , Vopp<br>A )} 10V<br>≤ 1<br>4 ≤ 0.1 %<br>2 EEN. Fig 10a.   Switching Time Test Circuit<br>VDS<br>90%<br>0 \ [—<br>25 50 75 100 125 150<br>TC , CaseTemperature (°C)<br>10% /\ \<br>Fig 9.   Maximum Drain Current vs. VGS |\< re >|ale ><br>Ambient Temperature td(on) tr td(off) tf<br>Fig 10b.   Switching Time Waveforms<br>100<br>PR<br>ee NL ea TT<br>D = 0.50<br>10 e 0.20 l<br>0.10<br>—— 0.05 tl HR A AR AE<br>1 PT 0.02 0.01 EE secre | IN R1 R LVI 1 R2 R2 1 R3R LIE 3 Ri (°C/W)    EEE  τi (sec)<br>0.1 SSSBS Ti oDTAT)a SE ae ee ee  oo τJ τJτ1 τ 1 τ2 τ 2 τ3 τ 3 τ 7.016       0.00474 26.95       0.04705 |i]<br>PHA Ci= τi/Ri 16.04       2.3619 |<br>Ci τi/Ri<br>IW 7; | tii ey If<br>0.01 A,a | a | ee | ee | ee ee Notes: | l<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>AT ( THERMAL RESPONSE ) ee ee een 2. Peak Tj = Pdm x Zthja + Ta |<br>mal ETE |<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1 , Rectangular Pulse Duration (sec)<br>ID  , Drain Current (A)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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## IRF7853PbF 

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**----- Start of picture text -----**<br>
40 40<br>VGS = 10V ID = 5.0A<br>35<br>30 i TC = 125°C [ 30 VY | |] TJ = 125°C<br>25<br>20 AeEEe<br>P ot) | | +<br>20<br>TJ = 25°C<br>TC = 25°C 15<br>So y , ONE<br>10<br>e o } Eee<br>10 4 6 8 10 12 14 16<br>0 10 20 30 40 50 60 70<br>VGS, Gate-to-Source Voltage (V)<br>ID , Drain Current (A)<br>)Ω<br>RDS (on) , Drain-to-Source On Resistance (m<br>)Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 12.** On-Resistance vs. Drain Current 

**Fig 13.** On-Resistance vs. Gate Voltage 

**==> picture [439 x 216] intentionally omitted <==**

**----- Start of picture text -----**<br>
QG<br>L<br>0 DUT VCC QGS QGD 2500<br>1K VG                  I D<br>TOP         0.23A<br>Charge 2000                0.34A<br>BOTTOM   5.0A<br>Fig 14a&b.   Basic Gate Charge Test Circuit 1500<br>and Waveform ET<br>1000<br>Cuma<br>15V<br>V(BR)DSS 500<br>tp VDS L DRIVER BNGHm<br>R20VG IASD.U.T +- [V][DD] A 0 25 50 75 100 125 150<br>IAS tp 0.01Ω Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 15a&b.** Unclamped Inductive Test circuit and Waveforms 

6 

**Fig 15c.** Maximum Avalanche Energy vs. Drain Current 

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## IRF7853PbF 

## **SO-8 Package Details** 

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**----- Start of picture text -----**<br>
INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>ane =<br>A 5 A .0532 .0688 1.35 1.75<br>0 ee ee<br>i 8 7 6 af 5 eseeee A1bc .0040.013.0075 .0098.020.0098 eeee 0.100.330.19 0.250.510.25<br>E : 6 H ———— D .189 .1968 4.80 5.00<br>0.25 [.010]  A E .1497 .1574 3.80 4.00<br>1 2 3 4<br>e .050  BASIC 1.27  BASIC<br>e1 .025  BASIC 0.635  BASIC<br>Ot Soooa H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X el e L esee L .016 .050 eeee 0.40 1.27<br>ee y  0° ee  8°  0°  8°<br>e1 K x 45°<br>“rt A alae<br>C<br>y<br>0.10 [.004]<br>ale 8X b A1 = SL 8X L 8X c 4<br>0.25 [.010]  C A B 7<br>FOOTPRINT<br>NOTES:<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>On ]<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>6.46 [.255] | | |<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>     A SUBSTRATE.<br>NOOO<br>3X 1.27 [.050] job<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## NOTES: 

1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 

2.  CONTROLLING DIMENSION: MILLIMETER 

3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 

4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 

- 5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. 

- MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. _ 6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 

- 7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 

## **SO-8 Part Marking** 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

DATE CODE (YWW) 

- P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) 

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XXXX<br>INTERNATIONAL F7101<br>RECTIFIER<br>LOGO<br>**----- End of picture text -----**<br>


- Y =  LAST DIGIT OF THE YEAR WW =  WEEK 

- A =  ASSEMBLY SITE CODE 

LOT CODE 

PART NUMBER 

www.irf.com 

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## IRF7853PbF 

## **SO-8 Tape and Reel** 

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TERMINAL NUMBER 1<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) : FEED DIRECTION<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

**==> picture [155 x 69] intentionally omitted <==**

**----- Start of picture text -----**<br>
 330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Notes: o® Repetitive rating;  pulse width limited by Pulse width ≤ 400µs; duty cycle ≤ 2%. max. junction temperature. © Cossoss eff. is a fixed capacitance that gives the same charging time @ Starting TJ = 25°C, L = 49mH, as Coss while VDS is rising from 0 to 80% VDSS.oss while VDS is rising from 0 to 80% VDSS.while VDS is rising from 0 to 80% VDSS.DS is rising from 0 to 80% VDSS.is rising from 0 to 80% VDSS.DSS.. RG = 25Ω, IAS = 5.0A. © ISD ≤ 5.0A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS, TJ ≤SD ≤ 5.0A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS, TJ ≤≤ 5.0A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS, TJ ≤ 5.0A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS, TJ ≤≤ 320A/µs, VDD ≤ V(BR)DSS, TJ ≤ 320A/µs, VDD ≤ V(BR)DSS, TJ ≤DD ≤ V(BR)DSS, TJ ≤≤ V(BR)DSS, TJ ≤V(BR)DSS, TJ ≤(BR)DSS, TJ ≤, TJ ≤J ≤≤ 150°C. 5 When mounted on 1 inch square copper @ Rθ is measured at θ is measured at is measured at Ty of approximately 90°C. board,  t ≤ 10 sec. 

© Cossoss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.oss while VDS is rising from 0 to 80% VDSS.while VDS is rising from 0 to 80% VDSS.DS is rising from 0 to 80% VDSS.is rising from 0 to 80% VDSS.DSS.. © ISD ≤ 5.0A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS, TJ ≤SD ≤ 5.0A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS, TJ ≤≤ 5.0A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS, TJ ≤ 5.0A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS, TJ ≤≤ 320A/µs, VDD ≤ V(BR)DSS, TJ ≤ 320A/µs, VDD ≤ V(BR)DSS, TJ ≤DD ≤ V(BR)DSS, TJ ≤≤ V(BR)DSS, TJ ≤V(BR)DSS, TJ ≤(BR)DSS, TJ ≤, TJ ≤J ≤≤ 150°C. @ Rθ is measured at θ is measured at is measured at Ty of approximately 90°C. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 1/06 

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8 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF7853TRPBF/power-mosfet-hexfet-n-channel-100-v-83-a-0018-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf7853trpbf/mosfet-n-ch-8-3a-100v-soic-8/dp/2776815)
---

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> [Request a quote](https://novapart.co/quote/) — it's free and there's no
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