# Power MOSFET, N Channel, 40 V, 18 A, 5000 µohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2468026/)

**URL**: https://novapart.co/products/IRF7842TRPBF/power-mosfet-n-channel-40-v-18-a-5000-ohm-soic
**SKU**: IRF7842TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4510
**Stock**: 1000+
**Lead Time**: 99 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.004ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.25V; Pow

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 18A |
| Drain Source On State Resistance | 5000µohm |
| Gate Source Threshold Voltage Max | 2.25V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2468026/)

## HEXFET Power MOSFET ~~ee~~ **VDSS RDS(on) max Qg (typ.) 40V 5.0m @VGS = 10V 33nC** 

## **Applications** 

Synchronous MOSFET for Notebook Processor Power 

Secondary Synchronous Rectification for Isolated DC-DC Converters 

- Synchronous Fet for Non-Isolated 

- DC-DC Converters 

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A<br>A<br>Lead-Free S 1 8 D<br>S 2 7 D<br>Benefits<br>S 3 6 D<br>e Very Low RDS(on) at 4.5V VGS<br>e Low Gate Charge G 4 5 D<br>e Fully Characterized Avalanche Voltage SO-8<br>Top View<br>     and Current<br>**----- End of picture text -----**<br>


|**Base Part  Number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRF7842PbF|SO-8|Tube/Bulk|95|IRF7842PbF|
|||Tape andReel|4000|IRF7842TRPbF|



## **Absolute Maximum Ratings** 

|||**Parameter**<br>**Max.**|**Units**||
|---|---|---|---|---|
|VDS||Drain-to-Source Voltage<br>V<br>40<br>~~a~~|||
|VGS||Gate-to-Source Voltage<br>± 20<br>~~ee~~|||
|ID@ TA= 25°C|= 25°C|Continuous Drain Current, VGS@ 10V<br>18<br>~~a~~|||
|ID@ TA= 70°C|= 70°C|Continuous Drain Current, VGS@ 10V<br>14<br>~~ee~~|A||
|IDM<br>PD@TA= 25°C<br>PD@TA= 70°C||Pulsed Drain Current<br>Power Dissipation<br>W<br>Power Dissipation<br>2.5<br>1.6<br>140<br>~~a~~<br>~~a~~<br>~~[8~~<br>~~7~~|||
|TJ<br>TSTG||Linear Derating Factor<br>Operating Junction and<br>Storage Temperature Range<br>-55  to + 150<br>0.02<br>~~ee ee~~|W/°C<br>°C||
|**Thermal Resistance**|||||
|||**Parameter**<br>**Typ.**<br>**Max.**|**Units**||
|Notes<br>RθJL<br>RθJA|through  are on page 10<br>Junction-to-Drain Lead<br>–––<br>20<br>Junction-to-Ambient<br>–––<br>50<br>~~3s~~<br>~~+~~<br>~~a~~<br>®<br>©)||°C/W<br>~~|~~||



**Static @ TJ = 25°C (unless otherwise specified)** 

|~~a~~|**Parameter**<br>~~ee~~|**Min.**<br>~~GG~~|**Typ.**<br>~~GG~~|**Max.**<br>~~GG~~|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS<br>~~a~~|Drain-to-Source Breakdown Voltage<br>~~ee~~|40<br>~~GG~~|**Typ.**<br>–––<br>~~GG~~|–––<br>~~GG~~|V|VGS= 0V,ID= 250μA|
|ΔΒVDSS/ΔTJ<br>~~a~~<br>~~ee~~|Breakdown Voltage Temp. Coefficient<br>~~ee~~<br>~~ee~~|–––<br>~~GG~~<br>~~ee~~|0.037<br>~~GG~~<br>~~ee~~|–––<br>~~GG~~<br>~~ee~~|V/°C<br>~~ee~~|Reference to 25°C,ID= 1mA<br>~~ee~~|
|RDS(on)<br>~~a~~<br>~~Se~~|Static Drain-to-Source On-Resistance<br>~~ee~~|–––<br>~~ee~~|4.0<br>~~ee~~|5.0<br>~~ee~~|mΩ<br>~~ee~~|VGS= 10V,ID= 17A<br>~~eee~~|
|||–––<br>~~ee~~<br>~~Pt~~|4.7<br>~~ee~~<br>~~Pt~~|5.9<br>~~ee~~<br>~~Pt~~||VGS= 4.5V,ID= 14A<br>~~eee~~<br>~~a~~|
|VGS(th)<br>~~a~~<br>~~Se~~|Gate Threshold Voltage<br>~~ee~~|1.35<br>~~ee~~<br>~~Pt~~|–––<br>~~ee~~<br>~~Pt~~|2.25<br>~~ee~~<br>~~Pt~~|V<br>~~ee~~|VDS= VGS, ID= 250μA<br>~~eee~~<br>~~a~~|
|GS(th)<br>ΔVGS(th)<br>~~Se~~<br>~~ee~~|Gate Threshold Voltage Coefficient<br>~~ee~~|–––<br>~~Pt~~<br>~~ee~~|- 5.6<br>~~Pt~~<br>~~ee~~|–––<br>~~Pt~~<br>~~ee~~|mV/°C<br>~~ee~~||
|GS(th)<br>IDSS<br>~~Se~~<br>~~a~~|Drain-to-Source Leakage Current<br>~~|~~|–––<br>~~Pt~~<br>~~|~~|–––<br>~~Pt~~<br>|1.0<br>~~Pt~~<br>|μA|VDS= 32V,VGS= 0V<br>~~a~~|
|||–––<br>~~|fT~~|–––<br>~~fT~~|150<br>~~fT~~||VDS= 32V,VGS= 0V,TJ= 125°C|
|IGSS<br>~~a~~<br>~~I~~<br>~~a~~|Gate-to-Source Forward Leakage<br>~~|~~<br>~~ee~~<br>~~|~~|–––<br>~~|fT~~<br>~~ee~~<br>~~|~~|–––<br>~~fT~~<br>~~ee~~<br>|100<br>~~fT~~<br>~~ee~~<br>|nA<br>~~eee~~|VGS= 20V<br>~~eee~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~<br>~~|~~<br>~~Ge~~|–––<br>~~ee~~<br>~~|||~~<br>~~GQ~~|–––<br>~~ee~~<br>~~||~~<br>~~GQ~~|-100<br>~~ee~~<br>~~||~~<br>~~GQ~~||VGS= -20V<br>~~eee~~|
|gfs<br>~~I~~<br>~~a~~<br>~~ee~~|Forward Transconductance<br>~~ee~~<br>~~|~~<br>~~Ge~~<br>~~ee~~|81<br>~~ee ~~<br>~~|||~~<br>~~GQ~~<br>~~ee~~|–––<br> ~~ee~~<br>~~||~~<br>~~GQ~~<br>~~ee~~|–––<br>~~ee~~<br>~~||~~<br>~~GQ~~<br>~~ee~~|S<br>~~eee~~|VDS= 20V,ID= 14A<br>~~eee~~|
|Qg<br>~~a~~<br>~~ee~~<br>~~ee~~|Total Gate Charge<br>~~Ge~~<br>~~ee~~<br>~~ee~~|–––<br>~~GQ~~<br>~~ee~~<br>~~ee~~|33<br>~~GQ~~<br>~~ee~~<br>~~ee~~|50<br>~~GQ~~<br>~~ee~~<br>~~ee~~|nC|ID= 14A<br>VGS= 4.5V<br>VDS= 20V|
|g<br>Qgs1<br>~~ee~~<br>~~ee~~<br>~~ee~~|Pre-Vth Gate-to-Source Charge<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|9.6<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|||
|gs1<br>Qgs2<br>~~ee~~<br>~~ee~~<br>~~es~~|Post-Vth Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~|2.8<br>~~ee~~|–––<br>~~ee~~|||
|gs2<br>Qgd<br>~~ee~~<br>~~es~~<br>~~ee~~|Gate-to-Drain Charge<br>~~ee~~|–––<br>~~ee~~|10<br>~~ee~~|–––<br>~~ee~~|||
|gd<br>Qgodr<br>~~es~~<br>~~ee~~<br>~~es~~|Gate Charge Overdrive<br>~~ee~~|–––<br>~~ee~~|10.6<br>~~ee~~|–––<br>~~ee~~|||
|godr<br>Qsw<br>~~ee~~<br>~~es~~|Switch Charge(Qgs2+ Qgd)<br>~~ee~~|–––<br>~~ee~~|12.8<br>~~ee~~|–––<br>~~ee~~|||
|Qoss<br>~~es~~<br>~~se~~<br>~~es~~|gs2gd<br>Output Charge<br>~~se~~<br>~~GG~~|–––<br>~~se~~<br>~~GG~~|18<br>~~se~~<br>~~GG~~|–––<br>~~se~~<br>~~GG~~|nC<br>~~se~~<br>~~GG~~|VDS= 16V,VGS= 0V<br>~~se~~<br>~~GG~~|
|RG<br>~~se~~<br>~~es~~<br>~~ee~~|Gate Resistance<br>~~se~~<br>~~GG~~|–––<br>~~se~~<br>~~GG~~|1.3<br>~~se~~<br>~~GG~~|2.6<br>~~se~~<br>~~GG~~|Ω<br>~~se~~<br>~~GG~~|~~se~~<br>~~GG~~<br>@|
|td(on)<br>~~es~~<br>~~ee~~<br>~~es~~|Turn-On DelayTime<br>~~GG~~|–––<br>~~GG~~|14<br>~~GG~~|–––<br>~~GG~~|ns<br>~~GG~~|Clamped Inductive Load<br>VDD= 20V, VGS= 4.5V<br>ID= 14A<br>~~GG~~<br>@|
|d(on)<br>tr<br>~~ee~~<br>~~es~~<br>~~ee~~|Rise Time<br>~~ee~~|–––<br>~~ee~~|12<br>~~ee~~|–––<br>~~ee~~|||
|td(off)<br>~~es~~<br>~~ee~~<br>~~es~~|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee~~|21<br>~~ee~~|–––<br>~~ee~~|||
|d(off)<br>tf<br>~~ee~~<br>~~es~~|Fall Time<br>~~ee~~|–––<br>~~ee~~|5.0<br>~~ee~~|–––<br>~~ee~~|||
|Ciss<br>~~es~~<br>~~a~~<br>~~ee~~|Input Capacitance|–––|4500|–––|pF|VGS= 0V<br>VDS= 20V<br>ƒ= 1.0MHz|
|Coss<br>~~ee~~|Output Capacitance|–––|680|–––|||
|Crss<br>~~ee~~<br>~~se~~|Reverse Transfer Capacitance<br>~~se~~|–––<br>~~se~~|310<br>~~se~~|–––<br>~~se~~|||



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1000<br>VGS<br>a ee ee TOP           10V5.0V<br>| 4.5V<br>3.5V<br>100 el 3.3V<br>3.0V<br>2.8V<br>BOTTOM 2.5V<br>Z aah<br>10<br>See at| | LLL |<br>1 2.5V<br>SSS eee<br>≤  60μs PULSE WIDTH<br>Tj = 25°C<br>0.1 PT | anti<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000.0<br>==a es<br>100.0<br>==Se<br>ee en ae 4<br>T J  = 150°C<br>a Gaon<br>10.0 ey 6a<br>T = 25°C<br>J<br>1.0 ee ae<br>7 a VDS = 25V<br>a<br>≤  60μs PULSE WIDTH<br>0.1<br>1.5 wane 2.0 2.5 3.0 3.5 4.0<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>) (Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000<br>VGS<br>a ee eeee TOP           10V5.0V<br>| 4.5V<br>3.5V<br>ar eel 3.3V<br>100 3.0V<br>2.8V<br>ne BOTTOM 2.5V<br>10 2.5V<br>Ce cil SS a aeeeel<br>a<br>≤  60μs PULSE WIDTH<br>Tj = 150°C<br>1 elie |<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>2.0<br>ID = 18A<br>V GS  = 10V LE<br>LL ELLE<br>1.5<br>ra<br>LLL LEYA<br>1.0<br>KX<br>eT<br>0.5 PLL EEE LL [EE]<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>= C  = C<br>rss   gd<br>C oss   = C ds  + C gd<br>10000 eeI<br>Ciss<br>ee a nel|<br>es ee<br>1000 Coss<br>SSS Th<br>ee ee Crss =<br>ee<br>100<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs.<br>Drain-to-Source Voltage<br>1000.0<br>Ee ee ee ee<br>100.0<br>pf || re<br>T = 150°C<br>J<br>eeee 7A re<br>10.0 a Ae<br>(ee ey ee 0 ee ee<br>1.0 T J  = 25°C<br>ey oe<br>VGS = 0V<br>| ft ff} +<br>0.1 ee ey oe<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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12<br>ID= 14A VDS= 30V<br>10 a VDS= 20V |SS<br>8 S| Y/Yo<br>6 f<br>4 P| |<br>4<br>2<br>0 ft|<br>0 20 40 60 80<br> QG  Total Gate Charge (nC)<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br>1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>een mM all<br>100<br>pobreerate tall | Lh<br>FLA<br>10 I<br>1msec<br>Ne A<br>1 10msec<br>PT Tc = 25°C TU eT<br>Tj = 150°C<br>Single Pulse<br>Ped de<br>0.1 muco<br>0 1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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18 2.4<br>16<br>NE 2.0 Ly} ey yyy.<br>14 PL PSA LE LL —a<br>12 ID = 250μA<br>PSSA PPR<br>1.6<br>10<br>ERAN ~ SO<br>8<br>COPEL NL 1.2 e]}<br>6 ERRReNe t} NG<br>4 cereeeeees 0.8 NI<br>2 EES) OL LT EL | LN<br>0 Ft tT |ttt]tf fl 0.4 EPCEETET<br>25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150<br>TJ , Junction Temperature (°C) TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Threshold Voltage Vs. Temperature<br>Case Temperature<br>100<br>D = 0.50<br>10 0.20<br>0.10<br>0.05<br>1 0.02<br>0.01<br>0.1 R 1R1 R 2R2 R 3R3 Ri (°C/W)     τ i (sec)<br>0.01 a ee | eee τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 τ C τ 10.48       0.13816726.83       1.8582 I<br>Ci=  τ i / Ri 12.69       44.8<br>Ci i / Ri<br>0.001 SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthja + Tc<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>ID  , Drain Current (A)<br>VGS(th) Gate threshold Voltage (V)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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16 200<br>ID = 18A                  I D<br>TOP          6.7A<br>160                 7.5A<br>12 BOTTOM   14A<br>120<br>\<br>8<br>Ay t TJ  f = 125°C Loo<br>80<br>4<br>|eeN= TJ  +— = 25°C 40 NC<br>pit<br>0 _  SL _——<br>0<br>2.0 4.0 6.0 i 8.0 10.0 | PSS.<br>25 50 75 100 125 150<br>VGS, Gate-to-Source Voltage (V)<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>) Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 12.** On-Resistance Vs. Gate Voltage 

**Fig 13c.** Maximum Avalanche Energy Vs. Drain Current 

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15V<br>LD<br>VDS<br>r y<br>VDS L DRIVER +<br>VDD -<br>RG D.U.T +<br>IAS - [V][DD] A D.U.T<br>4 q<br>2V0VGS tp 0.01 Ω VGS<br>Pulse Width < 1μs<br>Duty Factor < 0.1%<br> Unclamped Inductive Test Circuit<br>Fig 14a.   Switching Time Test Circuit<br>V(BR)DSS(BR)DSS<br>V<br>tp DS<br>90%<br>—_— > ft |<br>/ 10% [\<br>V<br>GS<br>td(on) tr td(off) tf<br> Unclamped Inductive Waveformsped Inductive Waveformsed Inductive Waveforms Fig 14b.   Switching Time Waveforms<br>**----- End of picture text -----**<br>


**Fig 13a.** Unclamped Inductive Test Circuit 

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V(BR)DSS(BR)DSS<br>—_— tp ><br>/<br>IAS<br>**----- End of picture text -----**<br>


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Fig 13b.   Unclamped Inductive Waveformsped Inductive Waveformsed Inductive Waveforms<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>D.U.T + { P.W. + Period ——— + D = —— Period<br>) [©)]    • Circuit Layout Considerations ) V | t GS=10V<br>•<br>| 1] - LowGround StrayPla I n eductance<br>•   CurrentLow LeakageTransformerInductance a) D.U.T. ISD Waveform<br>+<br>Reverse<br>fe) - 8 | a - ® + RecoveryCurrent r Body Diode ForwardCurrent di/dt /\ ——_<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ ’<br>00 + VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re (A •   dv/dt controlled by Rg Vo p - Inductor Curent<br>•<br>D.U.T. - Device Under Test e e ee<br>Isp controlled by Duty Factor "D" @ Ripple  ≤ 5% ISD<br>* Vg = 5V for Logic Level Devices<br>Fig 15.  Peak Diode Recovery dv/dt Test Circuit or N-Channel<br>HEXFET ® Power MOSFETs<br>Id<br>SameCurrentTypeRegulatorasCurrentTypeRegulatorasTypeRegulatorasRegulatorasas D.U.T. ,II Vds u1<br>|<br>| Vgs<br>50K Ω |<br>12V [| .2 ]: μ F || 1\<br>.3 μ F | '<br>et + {<br>D.U.T. -VDSVDSDS \ t\<br>Vgs(th) H \<br>VGSGS > \'\ \1\<br>! 1<br>3mA<br>WA IGG = IDD qa p i g pig<br>Current Resistors Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


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SameCurrentTypeRegulatorasCurrentTypeRegulatorasTypeRegulatorasRegulatorasas D.U.T. ,II<br>|<br>|<br>50K Ω<br>12V [| .2 ]: μ F |<br>.3 μ F |<br>et +<br>D.U.T. -VDSVDSDS<br>><br>VGSGS<br>3mA<br>WA =<br>IGG IDD<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 16.** Gate Charge Test Circuit 

**Fig 17.** Gate Charge Waveform 

## ���������� 

## **SO-8 Package Outline** 

Dimensions are shown in millimeters (inches) 

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INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>6 H D .189 .1968 4.80 5.00<br>E<br>0.25 [.010]  A E .1497 .1574 3.80 4.00<br>1 2 3 4<br>e .050  BASIC 1.27  BASIC<br>e 1 .025  BASIC 0.635  BASIC<br>H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e<br>L .016 .050 0.40 1.27<br>y  0°  8°  0°  8°<br>e1 K x 45°<br>A<br>C<br>y<br>0.10 [.004]<br>8X b A1 8X L 8X c<br>0.25 [.010]  C A B 7<br>FOOTPRINT<br>NOTES:<br>1.  DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENS ION: MILLIMETER<br>3.  DIMENS IONS  ARE S HOWN IN MILLIMETERS  [INCHES ].<br>4.  OUT LINE CONFORMS  TO JEDEC OUTLINE MS-012AA.<br>5   DIMENS ION DOES  NOT  INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROT RUSIONS NOT TO EXCEED 0.15 [.006].<br>6.46 [.255]<br>6   DIMENS ION DOES  NOT  INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROT RUSIONS NOT TO EXCEED 0.25 [.010].<br>7   DIMENS ION IS T HE LENGTH OF LEAD FOR S OLDERING TO<br>     A SUBS TRAT E.<br>3X 1.27 [.050]<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## **SO-8 Part Marking** 

EXAMPLE: T HIS  IS  AN IRF7101 (MOS FET) 

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DATE CODE (YWW)<br>P =  DESIGNATES  LEAD-FREE<br>PRODUCT  (OPTIONAL)<br>Y =  LAST DIGIT  OF THE YEAR<br>XXXX WW =  WEEK<br>INTERNATIONAL F7101 A =  AS SEMBLY SIT E CODE<br>RECT IFIER<br>LOT CODE<br>LOGO<br>PART  NUMBER<br>**----- End of picture text -----**<br>


**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

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## **SO-8 Tape and Reel** 

Dimensions are shown in millimeters (inches) 

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TERMINAL NUMBER 1<br>Oo OO © j<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) | FEED DIRECTION<br>NOTES:<br>1.   CONTROLLING DIMENSION : MILLIMETER.<br>2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).<br>3.   OUTLINE CONFORMS TO EIA-481 & EIA-541.<br> 330.00<br>(12.992)<br>  MAX.<br>| 2<br>14.40 ( .566 )<br>12.40 ( .488 )<br>NOTES :<br>1. CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>


**==> picture [21 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
NOTES:<br>**----- End of picture text -----**<br>


1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

**==> picture [108 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>**----- End of picture text -----**<br>


**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

|**Qualification information**<br>†|||
|---|---|---|
|Qualification level|Consumer<br>(per JEDEC JESD47F<br>††guidelines)||
|Moisture Sensitivity Level|SO-8|MS L1<br>(per JEDEC J-STD-020D<br>††)|
|RoHS compliant|(per JEDEC J<br>)<br>Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability ††   Applicable version of JEDEC standard at the time of product release 

Notes: ®® Repetitive rating;  pulse width limited by When mounted on 1 inch square copper board 

®® Repetitive rating;  pulse width limited by When mounted on 1 inch square copper board max. junction temperature. ®R θ is measured at T approximately 90°C ® Starting TJ = 25°C, L = 0.5mH RG = 25 Ω , IAS = 14A. ® Pulse width ≤ 400μs; duty cycle ≤ 2%. 

## **Revision History** 

|**Date**|**Comment**|
|---|---|
||•Updated data sheet based on corporate template.|
|7/8/2014|•Added Qual level on page10.<br>•Added ordering information on page1|
||•Updated Max RG from"TBD"to"2.6Ohm"on page2.|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF7842TRPBF/power-mosfet-n-channel-40-v-18-a-5000-ohm-soic)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf7842trpbf/mosfet-n-ch-40v-18a-soic-8/dp/2468026)
---

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