# Power MOSFET, N Channel, 30 V, 19 A, 0.0036 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2839486RL/)

**URL**: https://novapart.co/products/IRF7834TRPBF/power-mosfet-n-channel-30-v-19-a-00036-ohm-soic
**SKU**: IRF7834TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3340
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Channel Type | N Channel |
| Power Dissipation | 2.5W |
| Drain Source On State Resistance | 0.0036ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2839486RL/)

## IRF7834PbF 

## **Applications** 

Synchronous MOSFET for Notebook Processor Power Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Lead-Free 

## **Benefits** 

Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 

HEXFET Power MOSFET 

|**VDSS**|**RDS(on) max**|**Qg (typ.)**|
|---|---|---|
|**30V **|**4.5m @VGS = 10V**|**29nC**|



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20V VGS  Max. Gate Rating 

## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-to-Source Voltage<br>~~Oe~~|30<br>~~Oe~~|V<br>~~ee~~|
|VGS|Gate-to-Source Voltage<br>~~ee~~|± 20<br>~~ee~~||
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V<br>~~oo~~<br>~~ee~~|19<br>~~oo~~<br>~~ee~~|A<br>~~ee~~<br>|
|ID@ TA= 70°C|Continuous Drain Current, VGS@ 10V<br>~~TTT~~<br>~~ee~~|16<br>~~TTT~~<br>~~ee~~||
|IDM<br>~~OO~~<br>~~ss~~|Pulsed Drain Current<br>~~ee~~<br>~~OO~~<br>~~.wWnw~~<br>~~ss~~|160<br>~~ee~~<br>~~.wWnw~~<br>||
|PD@TA= 25°C<br>~~OO~~<br>~~ss~~|Power Dissipation<br>~~ee~~<br>~~OO~~<br>~~.wWnw~~<br>~~ss~~|2.5<br>~~ee~~<br>~~.wWnw~~<br>|W<br>~~ee~~<br>|
|PD@TA= 70°C<br>~~OO~~<br>~~ss~~|Power Dissipation<br>~~OO~~<br>~~.wWnw~~<br>~~ss~~|1.6<br>~~.wWnw~~<br>||
|~~ss~~|Linear Derating Factor<br>~~ss~~|0.02<br><br>~~ee~~|W/°C<br><br>~~ee~~|
|TJ<br>TSTG<br>|Operating Junction and<br>Storage Temperature Range<br>~~ee~~|-55  to + 150<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~<br>~~ee~~|



Notes hrough are on page 10 

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**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~e~~|**Typ.**<br>~~e~~|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~e~~|30<br>~~e~~<br>~~e~~|–––<br>~~e~~~~**s**~~<br>~~e~~|–––<br>~~**s**~~|V<br>~~**s**~~|VGS= 0V, ID= 250µA<br>~~**s**~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~e~~<br>~~GO~~|–––<br>~~e~~<br>~~e~~<br>~~GO~~<br>~~|~~|0.023<br>~~e~~~~**s**~~<br>~~e~~<br>~~GO~~<br>~~|~~|–––<br>~~**s**~~<br>~~|~~<br>|V/°C<br>~~**s**~~<br>~~QO~~<br>~~|~~|Reference to 25°C, ID= 1mA<br>~~**s**~~<br>~~QO~~<br>~~|~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~PE~~|–––<br>~~PE~~<br>~~|~~|3.6<br>~~PE~~<br>~~|~~|4.5<br>~~PE~~<br>~~|~~<br>|mΩ<br>~~PE~~<br>~~|~~|VGS= 10V, ID= 19A<br>~~PE~~<br>~~|~~|
|||–––<br>~~PE~~<br>~~|~~|4.4<br>~~PE~~<br>~~||~~|5.5<br>~~PE~~<br>~~|~~<br>~~|~~||VGS= 4.5V, ID= 16A<br>~~PE~~<br>~~|~~<br>~~®~~|
|VGS(th)|Gate Threshold Voltage<br>~~PE~~<br>~~ee~~|1.35<br>~~PE~~<br>~~|~~<br>~~ee~~<br>~~ee~~|–––<br>~~PE~~<br>~~| |~~<br>~~ee~~<br>~~es~~|2.25<br>~~PE~~<br>~~|~~<br>~~|~~|V<br>~~PE~~<br>~~|~~|VDS= VGS, ID= 250µA<br>~~PE~~<br>~~|~~<br>~~®~~<br>~~EE~~|
|∆VGS(th)|Gate Threshold Voltage Coefficient<br>~~es~~|–––<br>~~es~~<br>~~ee~~<br>~~**|**~~|- 5.2<br>~~es~~<br>~~es~~<br>~~**|**~~|–––<br>~~es~~<br>~~EE~~|mV/°C<br>~~es~~<br>~~EE~~||
|IDSS|Drain-to-Source Leakage Current<br>~~es~~<br>~~PE~~|–––<br>~~es~~<br>~~ee ~~<br>~~PE~~<br>~~**|**~~|–––<br>~~es~~<br> ~~es~~<br>~~PE~~<br>~~**|**~~|1.0<br>~~es~~<br>~~PE~~<br>~~EE~~|µA<br>~~es~~<br>~~PE~~<br>~~EE~~|VDS= 24V, VGS= 0V<br>~~PE~~<br>~~EE~~|
|||–––<br>~~PE~~<br>~~**|**~~|–––<br>~~PE~~<br>~~**|**~~|150<br>~~PE~~<br>~~EE~~||VDS= 24V, VGS= 0V, TJ= 125°C<br>~~PE~~<br>~~EE~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~PE~~<br>~~a~~<br>~~|~~|–––<br>~~PE~~<br>~~**|**~~<br>~~a~~<br>~~|~~|–––<br>~~PE~~<br>~~**|**~~<br>~~a~~<br>|100<br>~~PE~~<br>~~EE~~<br>~~a~~<br>|nA<br>~~PE~~<br>~~EE~~<br>~~a~~<br>~~ns~~|VGS= 20V<br>~~PE~~<br>~~EE~~<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~a~~<br>~~|~~|–––<br>~~a~~<br>~~|TT~~<br>~~en~~|–––<br>~~a~~<br>~~TT~~<br>~~Gs~~|-100<br>~~a~~<br>~~TT~~<br>~~ns~~||VGS= -20V<br>~~a~~|
|gfs|Forward Transconductance<br>~~a~~<br>~~|~~<br>~~es~~|85<br>~~a~~<br>~~|TT~~<br>~~es~~<br>~~en~~<br>~~ee~~|–––<br>~~a~~<br>~~TT~~<br>~~es~~<br>~~Gs~~<br>~~Ge~~|–––<br>~~a~~<br>~~TT~~<br>~~es~~<br>~~ns~~|S<br>~~a~~<br>~~es~~<br>~~ns~~|VDS= 15V, ID= 16A<br>~~a~~<br>~~es~~|
|Qg|Total Gate Charge<br>~~ee~~|–––<br>~~en ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|29<br> ~~Gs ~~<br>~~ee~~<br>~~Ge~~|44<br> ~~ns~~<br>~~ee~~|nC<br>~~ns~~|See Fig. 16<br>ID= 16A<br>VGS= 4.5V<br>VDS= 15V|
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|7.5<br> ~~Ge~~<br>~~es~~<br>~~Ge~~|–––<br>~~es~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.7<br>~~ee~~<br>~~Ge~~|–––<br>~~ee~~|||
|Qgd|Gate-to-Drain Charge<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|9.8<br> ~~Ge~~<br>~~es~~<br>~~Ge~~|–––<br>~~es~~|||
|Qgodr|Gate Charge Overdrive<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|9.0<br>~~ee~~<br>~~Ge~~<br>~~ee~~|–––<br>~~ee~~|||
|Qsw|Switch Charge (Qgs2+ Qgd)<br>~~es~~<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|12.5<br> ~~Ge~~<br>~~es~~<br>~~ee~~<br>~~Gs~~<br>|–––<br>~~es~~|||
|Qoss|Output Charge<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|19<br>~~es~~<br> ~~ee~~<br>~~es~~<br>~~Gs~~<br>~~es~~|–––<br>~~es~~<br>~~es~~|nC<br>~~es~~|VDS= 16V, VGS= 0V<br>~~es~~<br>©|
|td(on)|Turn-On DelayTime<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|13.7<br>~~es~~<br>~~Gs~~<br>~~es~~<br>~~Ge~~|–––<br>~~es~~|ns<br>~~es~~|Clamped Inductive Load<br>VDD= 15V, VGS= 4.5V<br>ID= 16A<br>~~es~~<br>©|
|tr|Rise Time<br>~~es ~~<br>~~ee~~|–––<br>~~ee~~<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|14.3<br>~~Gs~~<br> ~~es~~<br>~~ee~~<br>~~Ge~~|–––<br>~~ee~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|18<br> ~~Ge~~<br>~~es~~<br>~~Ge~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|5.0<br>~~ee~~<br>~~Ge~~|–––<br>~~ee~~|||
|Ciss|Input Capacitance<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|3710<br> ~~Ge~~<br>~~es~~<br>~~Ge~~|–––<br>~~es~~|pF|VGS= 0V<br>VDS= 15V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|810<br>~~ee~~<br>~~Ge~~<br>~~es~~|–––<br>~~ee~~|||
|Crss|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~|350<br> ~~Ge~~<br>~~ee~~<br>~~es~~|–––<br>~~ee~~|||



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1000 1000<br>VGS VGS<br>a eee TOP           10V a TOP           10V<br>                   4.5V                    4.5V<br>                   3.8V                    3.8V<br>100 ape ee                    3.5V LITee                    3.5V<br>                   3.3V                    3.3V<br>                   3.0V 100                    3.0V<br>                   2.8V                    2.8V<br>BOTTOM  2.5V BOTTOM  2.5V<br>Anan | E+perf<br>10<br>10 2.5V<br>EFAS Fr 7 eee|<br>2.5V<br>1 eP e E c | e|eee<br>Pt > 60µs PULSE WIDTH > 60µs PULSE WIDTH<br>eanlll Tj = 25°C ll Tj = 150°C<br>0.1 1<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000.00 1.5<br>ID = 20A<br>a ee essees VGS = 10V y<br>100.00<br>TJ = 150°C Oo f| | |<br>10.00 SSS aS — 1.0 AO<br>1.00<br>T = 25°C<br>J<br>a “a<br>0.10<br>—— VDS = 10V<br>if > 60µs PULSE WIDTH<br>=<br>0.01<br>0.5<br>2.0 3.0 4.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>VGS, Gate-to-Source Voltage (V)<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>)(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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100000 12<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED ID= 16AD= 16A= 16A VDS= 24VDS= 24V= 24V<br>Crss   = Cgd  10 VDS= 15V<br>Coss  = Cds + Cgd<br>10000 8<br>Ciss 6<br>1000 Coss 4<br>e e<br>| oo A<br>Crss 2<br>a eeeee<br>100 ee ee 0 Ji |i i i<br>0 10 20 30 40 50 60<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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12<br>ID= 16AD= 16A= 16A VDS= 24VDS= 24V= 24V<br>10 VDS= 15V<br>8<br>6<br>4<br>A<br>2<br>0 Ji |i i i<br>0 10 20 30 40 50 60 70<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

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1000.0<br>100.0<br>T = 150°C<br>J<br>10.0<br>1.0 TJ = 25°C<br>V = 0V<br>GS<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>10<br>1<br>100µsec<br>Tc = 25°C<br>1msec<br>Tj = 150°C<br>Single Pulse 10msec<br>0.1<br>0 1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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20 2.2<br>P |<br>16<br>P AN LEE 1.8 P NT]<br>12 L ENE BN<br>. N<br>ID = 250µA<br>8<br>T ONED} 1.4 P N G<br>4 S T TLELLLIN N<br>EEL ELLER \<br>0 1.0<br>25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150<br>TJ , Junction Temperature (°C) TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Threshold Voltage Vs. Temperature<br>Case Temperature<br>100<br>D = 0.50<br>10 0.20<br>0.10<br>0.05<br>1 0.02<br>0.1 0.01 τJ τJτ1τ1 R1 R 1 τ2 τR22 R 2 Rτ33 R τ33 τR4τ4R4 4 τCτ Ri (°C/W)   1.1659       0.0001849.9439       0.15391925.520       1.7486 τi (sec)<br>SINGLE PULSE Ci= τi/Ri 13.380       49<br>Ci i/Ri<br>0.01 ( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthja + Tc<br>0.001 FEF ENE FEHR FEEPH i<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>ID  , Drain Current (A)<br>VGS(th) Gate threshold Voltage (V)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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20 100<br>ID = 20A                  I D<br>TOP          5.9A        5.9A<br>16 80                 6.7A<br>BOTTOM   16A  16A<br>12 qt of 60 oee<br>{i} | \ tf<br>8<br>40<br>A PP TJ = 125°C W r<br>4<br>20<br>TJ = 25°C<br>0 ee ee<br>0<br>2.0 4.0 6.0 8.0 10.0<br>25 50 75 100 125<br>VGS, Gate-to-Source Voltage (V)<br>Starting TJ, Junction Temperature (°C)<br>Fig 12.    On-Resistance Vs. Gate Voltage Fig 13c.   Maximum Avalanche Energy<br>Vs. Drain Current<br>15V<br>LDD<br>VDSDS<br>eel<br>VDS L DRIVER +<br>VDDDD -<br>RG D.U.T +<br>; IAS - [V][DD] A D.U.T<br>20VVGS tp 0.01Ω VGSGS<br>EAS, Single Pulse Avalanche Energy (mJ)<br>)Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


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100<br>                 I D<br>TOP          5.9A        5.9A<br>80                 6.7A<br>BOTTOM   16A  16A<br>oee<br>60<br>\ tf<br>40<br>W r<br>20 ee<br>0<br>25 50 75 100 125 150<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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LDD<br>VDSDS<br>eel<br>+<br>VDDDD -<br>D.U.T<br>VGSGS<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br>Fig 14a.   Switching Time Test Circuit<br>V<br>DS<br>90%<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 13a.** Unclamped Inductive Test Circuit 

**Fig 14a.** Switching Time Test Circuit 

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V(BR)DSS<br>tp<br>IAS<br>**----- End of picture text -----**<br>


**Fig 14b.** Switching Time Waveforms 

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**Fig 13b.** Unclamped Inductive Waveforms 6 

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Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period ——— — D = —— Period<br>) [©)]    • Circuit Layout Considerations ) t V | GS=10V<br>•<br>| =] - LowGround StrayPla I n eductance<br>•   Low Leakage Inductance a) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [l] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 _ VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( 4 •   dv/dt controlled by Rg Vop - Inductor Curent<br>•<br>D.U.T. - Device Under Test SOO |<br>Isp controlled by Duty Factor "D" @ Ripple  ≤ 5% ISD<br>* Vg = 5V for Logic Level Devices<br>Fig 15.  Peak Diode Recovery dv/dt Test Circuit or N-Channel<br>HEXFET ® Power MOSFETs<br>Id<br>ee SameCurrentTypeRegulatoras D.U.T. I Vds u1<br>|<br>I fi Vgs<br>50KΩ |<br>12V .2µF || 1<br>.3µF | '<br>to + {<br>D.U.T. -VDS 1(<br>VGS > Vgs(th) H\' \\1<br>3mA ro I !<br>W\- IG ID L atepinging<br>Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 16.** Gate Charge Test Circuit 

**Fig 17.** Gate Charge Waveform 

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## **Power MOSFET Selection for Non-Isolated DC/DC Converters** 

## **Control FET** 

## **Synchronous FET** 

The power loss equation for Q2 is approximated by; 

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This can be expanded and approximated by; 

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*dissipated primarily in Q1. 

For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant.  Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. 

The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of  Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Q /Q must be minimized to reduce the gd gs1 potential for Cdv/dt turn on. 

Figure A:  Qoss Characteristic 

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## **SO-8 Package Outline** 

Dimensions are shown in millimeters (inches) 

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INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>- eee b .013 .020 0.33 0.51<br>1 8 F 7 LELE 6 5 +--+ c .0075 .0098 0.19 0.25  4<br>i 6 H a D .189 .1968 4.80 5.00<br>E<br>0.25 [.010]  A E .1497 .1574 3.80 4.00<br>1 2 3 4<br>| |r ———— e .050  BASIC 1.27  BASIC<br>1 es<br>e1 .025  BASIC 0.635  BASIC<br>-——— {——<br>H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e<br>of oon L .016 .050 0.40 1.27<br>a y  0°  8°  0°  8°<br>- e1 K x 45°<br>A<br>C<br>y<br>0.10 [.004]<br>dh 8X b n A1 iveau X S L 8X L 8X c 4<br>[ef 0.25 [.010]  @ C TT A B | 7<br>FOOTPRINT<br>NOTES:<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER<br>nae<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>Heng<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>6.46 [.255]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>     A SUBSTRATE. | ao<br>0003<br>3X 1.27 [.050] wy<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## **SO-8 Part Marking** 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

XXXX INTERNATIONAL F7101 RECTIFIER LOGO ~~m~~ e 

DATE CODE (YWW) 

- P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) 

Y =  LAST DIGIT OF THE YEAR WW =  WEEK A =  ASSEMBLY SITE CODE LOT CODE 

PART NUMBER 

www.irf.com 

9 

## **SO-8 Tape and Reel** 

Dimensions are shown in millimeters (inches) 

**==> picture [177 x 278] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>OOO ©<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )7.9 ( .312 ) _ FEED DIRECTION<br>|  330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


**==> picture [21 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
NOTES:<br>**----- End of picture text -----**<br>


1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.19mH RG = 25Ω, IAS = 16A. Pulse width ≤ 400µs; duty cycle ≤ 2%. 

When mounted on 1 inch square copper board 

θ 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/04 

www.irf.com 

10 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF7834TRPBF/power-mosfet-n-channel-30-v-19-a-00036-ohm-soic)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irf7834trpbf/mosfet-n-ch-30v-19a-soic/dp/2839486RL)
---

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