# Power MOSFET, N Channel, 30 V, 20 A, 4000 µohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2468025/)

**URL**: https://novapart.co/products/IRF7832TRPBF/power-mosfet-n-channel-30-v-20-a-4000-ohm-soic
**SKU**: IRF7832TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3820
**Stock**: 1000+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0031ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.32V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 155°C |
| Continuous Drain Current Id | 20A |
| Drain Source On State Resistance | 4000µohm |
| Gate Source Threshold Voltage Max | 2.32V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2468025/)

## PD-95016A IRF7832PbF 

## HEXFET Power MOSFET 

## **Applications** 

Synchronous MOSFET for Notebook Processor Power 

Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Lead-Free 

## **Benefits** 

Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 

|**VDSS**|**RDS(on) max**|**Qg**|
|---|---|---|
|**30V**|**4.0m @VGS = 10V**|**34nC**|



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20V VGS  Max. Gate Rating 100% tested for Rg 

## **Absolute Maximum Ratings** 

||**Parameter**<br>~~ee ee~~|**Max.**<br>~~ee~~|**Units**<br>~~ie~~|
|---|---|---|---|
|VDS|Drain-to-Source Voltage<br>~~a~~<br>~~ee ee~~|30<br>~~a~~<br>~~ee~~|V<br>~~a~~<br>~~ie~~|
|VGS<br>~~—_—_—~~|Gate-to-Source Voltage<br>~~ee ee~~<br>~~—_—_—~~|± 20<br>~~ee~~||
|ID@ TA= 25°C<br>~~—_—_—~~|Continuous Drain Current, VGS@ 10V<br>~~ee ee~~<br>~~pf~~<br>~~—_—_—~~|20<br>~~ee ~~<br>~~pf~~|A<br> ~~ie~~<br>~~pf~~<br>~~a~~|
|ID@ TA= 70°C<br>~~—_—_—~~|Continuous Drain Current, VGS@ 10V<br>~~a~~<br>~~—_—_—~~|16<br>~~a~~||
|IDM<br>~~—_—_—~~|Pulsed Drain Current<br>~~—_—_—~~|160||
|PD@TA= 25°C<br>~~—_—_—~~|Power Dissipation<br>~~—_—_—~~<br>~~=}~~|2.5<br>~~=}~~|W<br>~~a~~|
|PD@TA= 70°C|Power Dissipation<br>~~a~~<br>~~ee~~|1.6<br>~~a~~<br>~~ee~~||
||Linear Derating Factor<br>~~a~~<br>~~ee~~|0.02<br>~~a~~<br>~~ee~~|W/°C<br>~~a~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~ee~~|-55  to + 155<br>~~ee~~|°C|



## **Thermal Resistance** 

|**Thermal Resistance**|**Thermal Resistance**<br>~~ee ~~|~~ee~~|~~ee~~||
|---|---|---|---|---|
|—|**Parameter**<br>~~pO~~|**Typ.**|**Max.**|**Units**|
|RθJL<br>—|Junction-to-Drain Lead<br>~~pO~~|–––|20|°C/W|
|RθJA<br>—|Junction-to-Ambient<br>~~pO~~|–––|50||



> Notes @ through ) are on page 10 www.irf.com 

1 06/30/05 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**<br>~~GD~~|**Max. **<br>~~OD~~|**Units**<br>~~GO CO~~|**Conditions**<br>~~CO~~|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~GO~~|30<br>~~GO~~<br>~~Gs~~|–––<br>~~GO~~<br>~~GD~~<br>~~sD~~|–––<br>~~GO~~<br>~~OD~~<br>~~sD~~|V<br>~~GO~~<br>~~GO CO~~|VGS= 0V, ID= 250µA<br>~~GO~~<br>~~CO~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~GO~~<br>~~en~~<br>|–––<br>~~GO~~<br>~~en~~<br>~~Gs~~<br><br>~~|~~|0.023<br>~~GO~~<br>~~GD ~~<br>~~en~~<br>~~sD~~<br><br>~~|~~|–––<br>~~GO~~<br> ~~OD ~~<br>~~en~~<br>~~sD~~<br><br>|V/°C<br>~~GO~~<br> ~~GO CO~~<br>~~en~~<br>|Reference to 25°C, ID= 1mA<br>~~GO~~<br>~~CO~~<br>~~en~~<br>~~—~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~en~~<br>~~eS~~|–––<br>~~en~~<br>~~Gs ~~<br>~~eS~~<br>~~|~~|3.1<br>~~en~~<br> ~~sD~~<br>~~eS~~<br>~~|~~|4.0<br>~~en~~<br>~~sD~~<br>~~eS~~<br>|mΩ<br>~~en~~<br>~~eS~~|VGS= 10V, ID= 20A<br>~~en~~<br>~~eS—~~|
|||–––<br>~~eS~~<br>~~|~~|3.7<br>~~eS~~<br>~~||~~|4.8<br>~~eS~~<br>~~|~~||VGS= 4.5V, ID= 16A<br>~~eS—~~<br>~~©~~|
|VGS(th)<br>~~a~~|Gate Threshold Voltage<br>~~eS~~<br>~~ee~~<br>~~a~~|1.39<br>~~eS~~<br>~~|~~<br>~~ee~~<br>|–––<br>~~eS~~<br>~~| |~~<br>~~ee~~<br>|2.32<br>~~eS~~<br>~~|~~<br>|V<br>~~eS~~<br>|VDS= VGS, ID= 250µA<br>~~eS—~~<br>~~©~~<br>|
|∆VGS(th)<br>~~a~~|Gate Threshold Voltage Coefficient<br>~~a~~|–––<br>|5.7<br>|–––<br>|mV/°C<br>||
|IDSS<br>~~a~~|Drain-to-Source Leakage Current<br>~~aeS~~|–––<br>~~eS~~|–––<br>~~eS~~|1.0<br>~~eS~~|µA<br>~~eS~~|VDS= 24V, VGS= 0V<br>~~eS~~|
|||–––<br>~~eS~~|–––<br>~~eS~~<br>~~PT~~|150<br>~~eS~~<br>~~PT~~||VDS= 24V, VGS= 0V, TJ= 125°C<br>~~eS~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~a~~<br>~~**|**~~|–––<br>~~a~~<br>~~**|**~~|–––<br>~~a~~|100<br>~~a~~|nA<br>~~a~~<br>~~GOGO~~|VGS= 20V<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~a~~<br>~~**|**~~|–––<br>~~a~~<br>~~**|**~~|–––<br>~~a~~<br>~~|~~|-100<br>~~a~~<br>~~|~~<br>~~OD~~||VGS= -20V<br>~~a~~<br>~~GOGO~~|
|gfs|Forward Transconductance<br>~~a~~<br>~~**|**~~<br>~~GD~~|77<br>~~a~~<br>~~**|**~~<br>~~GD~~|–––<br>~~a~~<br>~~|~~<br>~~GD~~|–––<br>~~a~~<br>~~|~~<br>~~GD~~<br>~~OD~~|S<br>~~a~~<br>~~GD~~<br>~~GOGO~~|VDS= 15V, ID= 16A<br>~~a~~<br>~~GD~~<br>~~GOGO~~|
|Qg|Total Gate Charge<br>~~GD~~<br>~~eG~~|–––<br>~~GD~~<br>~~eG~~|34<br>~~GD~~<br>~~eG~~|51<br>~~GD~~<br>~~OD~~<br>~~eG~~|nC<br>~~GD~~<br>~~GOGO~~<br>~~GOGO~~|See Fig. 16<br>ID= 16A<br>VGS= 4.5V<br>VDS= 15V<br>~~GD~~<br>~~GOGO~~<br>~~GOGO~~|
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~a~~|–––<br>~~a~~|8.6<br>~~a~~|–––<br>~~a~~|||
|Qgs2|Post-Vth Gate-to-Source Charge|–––|2.9|–––|||
|Qgd|Gate-to-Drain Charge<br>~~a~~|–––<br>~~a~~|12<br>~~a~~|–––<br>~~a~~|||
|Qgodr|Gate Charge Overdrive|–––|10.5|–––|||
|Qsw|Switch Charge (Qgs2+ Qgd)<br>~~en~~<br>~~GD~~|–––<br>~~en~~<br>~~GD~~|14.9<br>~~en~~<br>~~GD~~|–––<br>~~en~~<br>~~GOGO~~|||
|Qoss|Output Charge<br>~~en~~<br>~~GD~~|–––<br>~~en~~<br>~~GD~~<br>~~GO~~|23<br>~~en~~<br>~~GD~~<br>~~RD OD~~|–––<br>~~en~~<br>~~GOGO~~<br>~~RD OD~~|nC<br>~~GOGO~~<br>~~GOGO~~|VDS= 16V, VGS= 0V<br>~~GOGO~~<br>~~GOGO~~|
|Rg|Gate Resistance<br>~~GD~~<br>~~en~~|–––<br>~~GD~~<br>~~en~~<br>~~GO~~|1.2<br>~~GD ~~<br>~~en~~<br>~~RD OD~~|2.4<br> ~~GOGO~~<br>~~en~~<br>~~RD OD~~|Ω<br>~~GOGO~~<br>~~en~~<br>~~GOGO~~|~~GOGO~~<br>~~en~~<br>~~GOGO~~|
|td(on)|Turn-On DelayTime<br>~~en~~|–––<br>~~GO ~~<br>~~en~~|12<br> ~~RD OD~~<br>~~en~~|–––<br>~~RD OD~~<br>~~en~~|ns<br>~~GOGO~~|Clamped Inductive Load<br>VDD= 15V, VGS= 4.5V<br>ID= 16A<br>~~GOGO~~|
|tr|Rise Time<br>~~eG~~|–––<br>~~eG~~|6.7<br>~~eG~~|–––<br>~~eG~~|||
|td(off)|Turn-Off DelayTime<br>~~a~~|–––<br>~~a~~<br>~~ee~~|21<br>~~a~~<br>~~ee~~|–––<br>~~a~~|||
|tf|Fall Time<br>~~es~~|–––<br>~~es~~<br>~~ee~~|13<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||
|Ciss|Input Capacitance<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~<br>~~ee~~|4310<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~|pF|VGS= 0V<br>VDS= 15V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance|–––|990|–––|||
|Crss|Reverse Transfer Capacitance<br>~~a~~|–––<br>~~a~~|450<br>~~a~~|–––<br>~~a~~|||



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1000 1000<br>VGS VGS<br>TOP           10V TOP           10V<br>5.0V 5.0V<br>100 4.5V3.5V 4.5V3.5V<br>3.0V 3.0V<br>2.7V 2.7V<br>2.5V 100 2.5V<br>10 BOTTOM 2.25V BOTTOM 2.25V<br>err HH HH F e ee a<br>1<br>10<br>2.25V<br>2.25V<br>0.1<br>20µs PULSE WIDTH 20µs PULSE WIDTH<br>Tj = 25°C Tj = 150°C<br>0.01 Siiiisesi eet 1 a EI<br>0.1 1 10 100 1000 0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 2.0<br> ID = 16A<br>VGS = 4.5V<br>100 1.5<br>a ee p T<br>T = 150°C<br>J<br>P E<br>SS TT<br>10 A)o oor 1.0 PEery> —| | pert<br>foa TJ = 25°C p beTi | | ty<br>1 | f f 0.5<br>p y ee P ELE EL<br>= VDS = 15V Saeeeeeeee<br>20µs PULSE WIDTH<br>0 fT 0.0 PE<br>2.0 2.5 3.0 3.5 4.0 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>VGS, Gate-to-Source Voltage (V) TJ, Junction Temperature (°C )<br>RDS(on) ,  Drain-to -Source On Resistance                      (Normalized)<br>ID, Drain-to-Source Current (A)<br>)<br>(Α<br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>-—| Crss   = Cgd<br>C = C + C<br>— oss   ds  gd<br>10000<br>Pe ro<br>ee ee Ciss<br>1000 e e<br>Coss<br>Crss<br>FEE Hh<br>100 PT<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs.<br>Drain-to-Source Voltage<br>1000<br>100 Fo a<br>S aaS Ze==<br>TJ = 150°C<br>10<br>ff }<br>TJ =  25°C<br>E R<br>1<br>S SSe eee<br>VGS = 0V<br>ee<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>VSD , Source-to-Drain Voltage (V)<br>) Α<br>ISD , Reverse Drain Current (<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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6<br>ID= 16A<br>5 VDS= 24V aa<br>VDS= 15V<br>| | Zea<br>4<br>| | YZ |<br>3<br>O Oo<br>2 Ppf f<br>1<br>A $+—}-—} —}—<br>0 A<br>0 10 20 30 40 50<br> QG  Total Gate Charge (nC)<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br>1000<br>a<br>100 SR<br>100µsec<br>pS<br>10 A h SI<br>1msec<br>Tc = 25°C ae<br>Tj = 150°C<br>ee ee<br>Single Pulse 10msec<br>1 eileeebaseneee|<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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24 2.5<br>20<br>2.0<br>16<br>ID = 250µA<br>12 1.5<br>8 N e ' NY<br>1.0<br>4<br>0 0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>25 50 75 100 125 150<br>TJ , Temperature (°C)<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>VGS(th), Gate Threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current Vs. Case Temperature 

**Fig 10.** Threshold Voltage Vs. Temperature 

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100<br>D = 0.50 ae aa mart eet ET atl<br>10 e e 0.20 ee ee ae |<br>0.10<br>S 0.05 T<br>1 g D 0.02 eeezal<br>0.01<br>e 1 eHe HA aTeH<br>PM A eer Tr -<br>0.1<br>r r ey |<br>SINGLE PULSE<br>EE ( THERMAL RESPONSE ) 1. Duty fackor D= ttty<br>> asi HLL<br>HH ET ETHEE) 2: Pees to Boe nr<br>0.01<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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10 600<br>ID = 20A I<br>D<br>500 TOP         7.0A<br>8<br>13A<br>BOTTOM 16A<br>V ite 400 S H |<br>6 i ve fo oL N Et<br>TJ = 125°C<br>300<br>4 o S fo R K ET<br>200<br>TJ = 25°C<br>2 p S N NENGEEEEE<br>0 P o) Fc 1000 UPSSSSA<br>2 3 4 5 6 7 8 9 10 25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>VGS, Gate -to -Source Voltage  (V)<br>Fig 12.  On-Resistance vs. Gate Voltage Fig 13.   Maximum Avalanche Energy<br>vs. Drain Current<br>Current Regulator<br>Same Type as D.U.T.<br>V(BR)DSS<br>15V tp 50KΩ<br>12V .2µF<br>.3µF<br>VDS L DRIVER +<br>D.U.T. -VDS<br>RG D.U.T +<br>20VVGS IAS - [V][DD] A VGS<br>1 tp 0.01Ω IAS 3mA<br>e e 7 of |<br>Fig 14.   Unclamped Inductive Test Circuit CurrentIGSampling ResistorsID<br>and Waveform<br>LD Fig 15.   Gate Charge Test Circuit<br>VDS V<br>DS<br>+ 90%<br>VDD -<br>D.U.T<br>10%<br>VGS V<br>GS<br>Pulse Width < 1µs<br>md Duty Factor < 0.1%<br>)<br> Ω<br>RDS(on),  Drain-to -Source On Resistance (m EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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V<br>DS<br>90%<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 16.** Switching Time Test Circuit 

**Fig 17.** Switching Time Waveforms 

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Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period ——— + D = —— Period<br>) [©)]    • Circuit Layout Considerations ) t V | GS=10V<br>•<br>| =] - LowGround StrayPla I n eductance<br>•   Low Leakage Inductance a) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [l] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 > VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( 4 •   dv/dt controlled by Rg Vop - Inductor Curent<br>•<br>D.U.T. - Device Under Test SOO |<br>Isp controlled by Duty Factor "D" @ Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 18.** eak Diode Recovery dv/dt Test Circuit or N-Channel HEXFET ® ower MOSFETs 

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Id<br>Vds i]!<br>1 Vgs<br>1<br>1<br>1<br>1<br>1<br>1<br>1<br>1<br>1<br>! \<br>Vgs(th) !H \|<br>! \<br>! \<br>! \<br>H \<br>I ! \ ! 1<br>L t > <1 $§ p e) - <g—_$___——_———_ ><br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 19.** Gate Charge Waveform 

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## **Power MOSFET Selection for Non-Isolated DC/DC Converters** 

## **Control FET** 

## **Synchronous FET** 

The power loss equation for Q2 is approximated by; 

**==> picture [185 x 15] intentionally omitted <==**

This can be expanded and approximated by; 

**==> picture [207 x 109] intentionally omitted <==**

**==> picture [187 x 102] intentionally omitted <==**

*dissipated primarily in Q1. 

For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant.  Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. 

The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of  Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Q /Q must be minimized to reduce the gd gs1 potential for Cdv/dt turn on. 

Figure A:  Qoss Characteristic 

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## **SO-8 Package Details** 

## **SO-8 Part Marking** 

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## **SO-8 Tape and Reel** 

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TERMINAL NUMBER 1<br>oO Oo ©<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) | FEED DIRECTION<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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 330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 2.0mH, RG = 25Ω, IAS = 16A. Pulse width ≤ 400µs; duty cycle ≤ 2%. 

When mounted on 1 inch square  copper board. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 06/05 

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