# Power MOSFET, N Channel, 200 V, 3.7 A, 0.078 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2777395RL/)

**URL**: https://novapart.co/products/IRF7820TRPBF/power-mosfet-n-channel-200-v-37-a-0078-ohm-soic
**SKU**: IRF7820TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4010
**Stock**: 1000+
**Lead Time**: 64 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0625ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Pow

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3.7A |
| Drain Source On State Resistance | 0.078ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2777395RL/)

## IRF7820PbF 

HEXFET Power MOSFET 

## **Applications** 

Synchronous MOSFET for Notebook Processor Power 

Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems 

## **Benefits** 

Very Low RDS(on) at 10V VGS Low Gate Charge 

Fully Characterized Avalanche Voltage and Current 20V VGS  Max. Gate Rating 

**VDSS RDS(on) max Qg (typ.) 200V 78m**  **@VGS = 10V 29nC** 

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## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**|**Absolute Maximum Ratings**<br>**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS<br>~~ee~~|Drain-to-Source Voltage<br>~~a~~<br>~~ee~~|200<br>~~a~~<br>~~ee~~|V<br>~~ee~~|
|VGS<br>~~ee~~<br>~~—~~|Gate-to-Source Voltage<br>~~ee~~|± 20<br>~~ee~~||
|ID@ TA= 25°C<br>~~—~~|Continuous Drain Current,VGS@ 10V|3.7|A|
|ID@ TA= 70°C<br>~~——~~|Continuous Drain Current,VGS@ 10V|2.9||
|IDM<br>~~——~~|Pulsed Drain Current|29||
|PD@TA= 25°C<br>~~Soo~~|Power Dissipation<br>~~Soo~~|2.5<br>~~Soo~~|W<br>~~Soo~~|
|PD@TA= 70°C<br>~~Soo~~|Power Dissipation<br>~~Soo~~|1.6<br>~~Soo~~||
|~~Soo~~<br>~~a~~|Linear Derating Factor<br>~~Soo~~<br>~~a~~<br>~~ee~~|0.02<br>~~Soo~~<br>~~a~~<br>~~ee~~|W/°C<br>~~Soo~~<br>~~a~~<br>~~ee~~|
|TJ<br>TSTG<br>~~a~~|Linear Derating Factor<br>Operating Junction and<br>Storage Temperature Range<br>~~a~~<br>~~ee~~|-55  to + 150<br>~~a~~<br>~~ee~~|°C<br>~~a~~<br>~~ee~~|



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RJL|Junction-to-Drain Lead|–––|20|°C/W|
|RJA|Junction-to-Ambient|–––|50||



> Notes ® hrough ® are on page 9 

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1 

07/24/2012 

**Static @ TJ = 25°C (unless otherwise specified)** 

|~~a~~|**Parameter**<br>~~GO~~|**Min.**<br>~~GO~~|**Typ.**<br>~~GO CO~~|**Max. **<br>~~CO~~<br>~~OC~~|**Units**<br>~~CO~~<br>~~OC~~|**Conditions**<br>~~CO~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~GG~~<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~GG~~<br>|200<br>~~GG~~<br>|–––<br>~~GG~~<br>~~QO~~<br>|–––<br>~~GG~~<br>~~OC~~<br>~~QO~~<br>|V<br>~~GG~~<br>~~OC~~<br>~~QO~~<br>|VGS= 0V,ID= 250μA<br>~~GG~~<br>|
|VDSS/TJ<br>~~GG~~<br>~~GO~~<br>~~es~~|Breakdown Voltage Temp. Coefficient<br>~~GG~~<br>~~GO~~<br>|–––<br>~~GG~~<br>~~GO~~<br>|0.23<br>~~GG~~<br>~~GO~~<br>~~QO~~<br>|–––<br>~~GG~~<br>~~OC~~<br>~~GO~~<br>~~QO~~<br><br>~~CO~~|V/°C<br>~~GG~~<br>~~OC~~<br>~~GO~~<br>~~QO~~<br><br>~~CO~~|Reference to 25°C,ID= 1mA<br>~~GG~~<br>~~GO~~<br><br>~~©~~|
|RDS(on)<br>~~es~~|Static Drain-to-Source On-Resistance<br>~~GO~~|–––<br>~~GO~~|62.5<br>~~QO~~<br>~~GO~~|78<br>~~QO~~<br>~~GO~~<br>~~CO~~|m<br>~~QO~~<br>~~GO~~<br>~~CO~~|VGS= 10V,ID= 2.2A<br>~~GO~~<br>~~©~~|
|VGS(th)<br>~~es~~<br>~~Sn~~|Gate Threshold Voltage<br>~~GO~~<br>~~Sn~~|3.0<br>~~GO~~<br>~~Sn~~|4.0<br>~~QO~~<br>~~GO~~<br>~~Sn~~|5.0<br>~~QO~~<br>~~GO~~<br>~~CO~~<br>~~Sn~~|V<br>~~QO~~<br>~~GO~~<br>~~CO~~<br>~~Sn~~|VDS= VGS, ID= 100μA<br>~~GO~~<br>~~©~~<br>~~Sn~~<br>~~ee~~|
|VGS(th)<br>~~Sn~~<br>~~GG~~|Gate Threshold Voltage Coefficient<br>~~Sn~~<br>~~GG~~|–––<br>~~Sn~~<br>~~GG~~|-12<br>~~Sn~~<br>~~GG~~|–––<br>~~Sn~~<br>~~GG~~|mV/°C<br>~~Sn~~<br>~~GG~~||
|IDSS<br>~~a~~|Drain-to-Source Leakage Current<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|20<br>~~ee~~|μA<br>~~ee~~<br>~~et~~|VDS= 200V,VGS= 0V<br>~~ee~~<br>~~ee~~|
|||–––<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|250<br>~~ee~~<br>~~et~~||VDS= 200V,VGS= 0V,TJ= 125°C<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|IGSS<br>~~rrr~~<br>~~a~~|Gate-to-Source Forward Leakage<br>~~rrr~~|–––<br>~~rrr~~<br>~~ee~~|–––<br>~~rrr~~<br>~~ee~~|100<br>~~rrr~~<br>~~et~~|nA<br>~~rrr~~<br>~~et~~<br>~~QQ~~|VGS= 20V<br>~~ee~~<br>~~rrr~~<br>~~ee~~|
||Gate-to-Source Reverse Leakage<br>~~rrr~~|–––<br>~~rrr~~<br>~~ee~~|–––<br>~~rrr~~<br>~~ee~~|-100<br>~~rrr~~<br>~~et~~<br>~~QQ~~||VGS= -20V<br>~~rrr~~<br>~~ee~~|
|gfs<br>~~rrr~~<br>~~GQ~~<br>~~a~~|Forward Transconductance<br>~~rrr~~<br>~~GQ~~|5.0<br>~~rrr~~<br>~~ee ~~<br>~~GQ~~|–––<br>~~rrr~~<br> ~~ee ~~<br>~~GQ~~|–––<br>~~rrr~~<br> ~~et~~<br>~~GQ~~<br>~~QQ~~|S<br>~~rrr~~<br>~~et ~~<br>~~GQ~~<br>~~QQ~~|VDS= 50V,ID= 2.2A<br>~~rrr~~<br> ~~ee~~<br>~~GQ~~|
|Qg<br>~~a~~|Total Gate Charge|–––|29|44<br>~~QQ~~|nC<br>~~QQ~~<br>|See Figs. 6, 16a & 16b<br>ID= 2.2A<br>VGS= 10V<br>VDS= 100V<br>|
|Qgs1<br>~~a~~<br>~~es~~|Pre-Vth Gate-to-Source Charge|–––|8.6|–––|||
|Qgs2<br>~~es~~|Post-Vth Gate-to-Source Charge|–––|1.5|–––|||
|Qgs<br>~~es~~<br>~~GG~~<br>~~es~~|Gate-to-Source Charge<br>~~GG~~|–––<br>~~GG~~|10.1<br>~~GG~~|–––<br>~~GG~~|||
|Qgd<br>~~es~~|Gate-to-Drain Charge|–––|8.7|–––|||
|Qgodr<br>~~es~~<br>~~a~~|Gate Charge Overdrive|–––|10.2|–––|||
|Qsw<br>~~a~~|Switch Charge(Qgs2+ Qgd)<br>|–––<br>|10.2<br>|–––<br>|||
|Qoss<br>~~aGG~~<br>~~a~~|Output Charge<br>~~GG~~|–––<br>~~GG~~|30<br>~~GG~~|–––<br>~~OC~~<br>~~COO~~|nC<br>~~OC~~<br>~~COO~~|VDS= 20V,VGS= 0V<br>~~OC~~<br>~~@~~|
|RG<br>~~GG~~<br>~~GQ~~<br>~~a~~|Gate Resistance<br>~~GG~~<br>~~GQ~~|–––<br>~~GG~~<br>~~GQ~~|0.73<br>~~GG ~~<br>~~GQ~~|–––<br> ~~OC~~<br>~~GQ~~<br>~~COO~~|<br>~~OC~~<br>~~GQ~~<br>~~COO~~|~~OC~~<br>~~GQ~~<br>~~@~~|
|td(on)<br>~~a~~|Turn-On DelayTime|–––|7.1|–––<br>~~COO~~|ns<br>~~COO~~|RG= 1.8<br>VDD= 200V, VGS= 10V<br>ID= 2.2A<br>See Figs. 15a & 15b<br>~~@~~|
|tr<br>~~a~~<br>~~es~~|Rise Time|–––|3.2|–––|||
|td(off)<br>~~es~~|Turn-Off DelayTime|–––|14|–––|||
|tf<br>~~es~~<br>~~a~~|Fall Time|–––|12|–––|||
|Ciss<br>~~a~~|Input Capacitance|–––|1750|–––|pF|VGS= 0V<br>VDS= 100V<br>ƒ= 1.0MHz|
|Coss<br>~~a~~|Output Capacitance<br>|–––<br>|90<br>|–––<br>|||
|Crss<br>~~Ce~~|Reverse Transfer Capacitance<br>~~Ce~~|–––<br>~~Ce~~|25<br>~~Ce~~|–––<br>~~Ce~~|||



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1000 100<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>100 7.0V 6.25V 7.0V 6.25V<br>6.0V 6.0V<br>5.75V 5.75V<br>5.5V 10 5.5V<br>10 BOTTOM 5.25V BOTTOM 5.25V<br>5.25V<br>1 Feo a<br>1<br>a es LP et EHH<br>0.1 a 5.25V er ll PHEE EEE<br>———— ae PT<br>60μs PULSE WIDTH 60μs PULSE WIDTH<br>0.01 Ce Tj = 25°C meal 0.1 | LH | Tj = 150°C ill<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>100 2.5<br>VDS = 50V ID = 3.7A<br>60μs PULSE WIDTH VGS = 10V<br>===ee ee ee ee ee. es ee 2.0 Ty) | Wa<br>10<br>ptt yy va<br>1.5<br>FF TJ = 150  +A ° C Bi<br>TJ = 25°C 1.0<br>1<br>| {f| yy | Epo cannnnne<br>ee ee 4 ee ee 2 ee ee ee 0.5<br>0.1 rT E EE 0.0<br>4 4 5 5 6 6 7 7 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance vs. Temperature 

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100000 14.0<br>VGS   = 0V,       f = 1 MHZ<br>I = 2.2A<br>Ciss   = C gs + Cgd,  C ds SHORTED D<br>C  = C 12.0<br>C rss   = C gd  + C VDS= 160V<br>10000 oss   ds  gd 10.0 V DS = 100V<br>VDS= 40V<br>pg Ciss ey 8.0 — Gf<br>1000<br>C<br>oss 6.0<br>100 Crss 4.0<br>2.0<br>en |<br>10 0.0<br>1 10 100 1000 0 10 20 30 40<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>Fig 5.   Typical Capacitance vs. Fig 6.   Typical Gate Charge vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>100 100<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on) 100μsec<br>1 msec<br>a a aril cai a il<br>10<br>10 TJ = 150°C<br>10msec<br>ar ae eee 1 TA Ay a TPE<br>T J  = 25°C<br>DC<br>1<br>0.1<br>Tc = 25°C<br>lf | | Uf V GS  = 0V Tj = 150°CSingle Pulse Pelt<br>0.1 ae 0.01 WR ses|  1  tiie FT<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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4 —Rf 6.05.5 PLE]yy yyy<br>~~<br>3 PNR pS<br>5.0<br>P| NE SECTS<br>4.5<br>oo} FPSSKPBK<br>2<br>ID = 100μA<br>4.0<br>FEN ID = 250μA BSNGER<br>ID = 1.0mA<br>3.5<br>1 Pot NG ID = 1.0A 228Nwe<br>3.0<br>P| | | ft \ BeePENS wNN<br>0 po 2.5 OEEPt tT |] | | | | TN<br>25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150<br> TA , Ambient Temperature (°C) TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Threshold Voltage vs. Temperature<br>Ambient Temperature<br>100<br>D = 0.50<br>10 0.20<br>0.10<br>0.05<br>1 0.02<br>0.01<br>0.1<br>0.01<br>0.001 SINGLE PULSE<br>( THERMAL RESPONSE )<br>PTE HEHEHE EEE<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1 , Rectangular Pulse Duration (sec)<br>ID,  Drain Current (A)<br>VGS(th), Gate threshold Voltage (V)<br>Thermal Response ( Z thJA ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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150 2500<br>ID = 3.6A ID<br>TOP         0.25A<br>2000 0.37A<br>125<br>BOTTOM 2.8A<br>T = 125°C<br>J<br>Ni 1500 en<br>Trott NCE<br>100<br>QOUERRREE<br>1000<br>aac<br>75<br>T = 25°C<br>J  500<br>50 /\senene Sheree} 0 SN LLL TSS<br>4 6 8 10 12 14 16 18 20 25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>VGS, Gate -to -Source Voltage  (V)<br>Fig 12.    On-Resistance vs. Gate Voltage Fig 13.   Maximum Avalanche Energy<br>vs. Drain Current<br>V(BR)DSS<br>15V <~<— tp —>»<br>VDS L DRIVER /<br>RG D.U.T + /<br>- [V][DD]<br>IAS A<br>2V0VGS<br>:  Jt tp 0.01 IAS /<br>Fig 14a.   Unclamped Inductive Test Circuit Fig 14b.   Unclamped Inductive Waveforms<br>VDS<br>Vps 5 Ra 90% /._\<br>Ves D.U.T. K |<br>+<br>-<br>10% /\ |<br> VGS<br><br>td(on) tr td(off) tf<br>) <br>RDS(on),  Drain-to -Source On Resistance (m EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 15a.** Switching Time Test Circuit 

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Fig 15b.   Switching Time Waveforms<br>www.irf.com<br>**----- End of picture text -----**<br>


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Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>0<br>S Vgs(th)<br>201 K<br>Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>


## **Fig 16a.** Gate Charge Test Circuit 

## **Fig 16b.** Gate Charge Waveform 

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Driver Gate Drive<br>P.W.<br>D.U.T + { $ P.W. $ Period — — D = —— Period<br>) [©)]  Circuit Layout Considerations V t t GS x =10V<br>| — -  GroundLow StrayPlane Inductance<br> Low Leakage Inductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [1] Current Transformer - ® + Current r Current di/dt AN<br>©) D.U.T. VDS Waveform Diode Recovery<br>‘+ 00 dv/dt \ > VDD<br> Re-Applied<br>Re )  dvidtDriver controlledsame type byas ReD.U.T. Vo**p + Voltage Body Diode  Forward Drop [_<br> - Inductor Curent<br><br>D.U.T. - Device Under Test e s ee<br>Isp controlled by Duty Factor "D" @) Ripple   5% ISD<br>**----- End of picture text -----**<br>


**Fig 17.** 

> for HEXFET ® Power MOSFETs 

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Dimensions are shown in milimeters (inches) 

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Po [129 [1968 | 4.80_[ 5.00<br>**----- End of picture text -----**<br>


## SO-8 Part Marking Information 

**Note: For the most current drawing please refer to IR website at http://www.irf.com/package/** 

www.irf.com 

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## **SO-8 Tape and Reel** 

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TERMINAL NUMBER 1<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>rir 7.9 ( .312 ) | FEED DIRECTION ah<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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 330.00<br>(12.992)<br>  MAX.<br>Y O )<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

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1. CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 155mH, RG = 50, IAS = 2.8A Pulse width  400μs; duty cycle  2%. 

When mounted on 1 inch square  copper board. 

Ris measured at 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd.., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/12 

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