# Power MOSFET, N Channel, 30 V, 13.3 A, 9000 µohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2777386/)

**URL**: https://novapart.co/products/IRF7809AVTRPBF/power-mosfet-n-channel-30-v-133-a-9000-ohm-soic
**SKU**: IRF7809AVTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5780
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:13.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 13.3A |
| Drain Source On State Resistance | 9000µohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2777386/)

PD - 95212A 

## IRF7809AVPbF 

- N-Channel Application-Specific MOSFETs 

- Ideal for CPU Core DC-DC Converters 

- Low Conduction Losses 

- Low Switching Losses 

- Minimizes Parallel MOSFETs for high current applications 

- 100% Tested for Rg 

- Lead-Free 

## **Description** 

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. 

The IRF7809AV has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7809AV offers particulary low RDS(on) and high Cdv/dt immunity for synchronous FET applications. 

The package is designed for vapor phase, infra-red, convection, or wave soldering techniques.  Power dissipation of greater than 2W is possible in a typical PCB mount application. 

**==> picture [154 x 89] intentionally omitted <==**

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A<br>A<br>S 1 8 D<br>S 2 7 D<br>S 3 6 D<br>G 4 5 D<br>SO-8 Top View<br>**----- End of picture text -----**<br>


DEVICE CHARACTERISTICS 

|**IRF7809AV**|**IRF7809AV**|
|---|---|
|RDS(on)|7.0mΩ|
|QG|41nC|
|Qsw|14nC|
|Qoss|30nC|



## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**|**Absolute Maximum Ratings**||||
|---|---|---|---|---|
|**Parameter**<br>Ge<br>PO||**Symbol**<br>Ge<br>PO<br>Pe|**IRF7809A V**<br>Ge<br>Pe|**Units**<br>Ge|
|Drain-Source Voltage<br>PO||VDS<br>PO<br>Pe|30<br>Pe|V|
|Gate-Source Voltage<br>PO<br>po||VGS<br>PO<br>Pe|±12<br>Pe||
|Continuous Drain or Source<br>Current (VGS≥ 4.5V)<br>po|TA= 25°C|ID|13.3|A|
||TL= 90°C||14.6||
|Pulsed Drain Current<br>po<br>eG||IDM<br>eG|100<br>eG||
|Power Dissipation<br>po<br>LE|TA= 25°C<br>LE|PD<br>LE|2.5|W|
||TL= 90°C<br>LE||3.0||
|Junction & Storage Temperature Range||TJ, TSTG|–55 to 150|°C|
|Continuous Source Current (Body Diode)||IS|2.5|A|
|Pulsed Source Current||ISM|50||
|**Thermal Resistance**<br>rs<br>Po<br>PO|||||
|**Parameter**<br>rs<br>Po||rs<br>rs<br>PO|**Max.**<br>rs<br>PO|**Units**<br>rs|
|Maximum Junction-to-Ambient<br>Po||RθJA<br>rs<br>PO|50<br>PO|°C/W|
|Maximum Junction-to-Lead<br>Po||RθJL<br>rs<br>PO|20<br>PO|°C/W|



08/23/05 

## IRF7809AVPbF 

**Electrical Characteristics** 

|**Electrical Characteristics**|**Electrical Characteristics**|||||||
|---|---|---|---|---|---|---|---|
|**Parameter**<br>TP||TP|**Min**<br>TP|**Typ**<br>TP|**Max**<br>TP|**Units**<br>TP|**Conditions**<br>TP|
|Drain-to-Source<br>Breakdown Voltage<br>TP||BVDSS<br>TP|30<br>TP|–<br>TP<br>ee|–<br>TP<br>ee|V<br>TP|VGS= 0V, ID= 250µA<br>TP|
|Static Drain-Source<br>on Resistance<br>ee||RDS(on)<br>ee<br>ee|ee<br>eeee|7.0<br>ee<br>ee<br>eeee|9.0<br>ee<br>ee<br>eeGe|mΩ<br>ee<br>Ge|VGS= 4.5V, ID= 15A<br>ee|
|Gate Threshold Voltage<br>e||VGS(th)<br>e<br>ee|1.0<br>e<br>eeee|ee<br>e<br>eeee|ee<br>e<br>eeGe|V<br>ee<br>Ge|VDS= VGS,ID= 250µA<br>e|
|Drain-Source Leakage<br>Current*<br>Current||IDSS<br>ee|eeee|eeee|30<br>eeGe|µA<br>Ge|VDS= 24V, VGS= 0|
||||||150||VDS= 24V, VGS= 0,<br>Tj = 100°C|
|Gate-Source Leakage<br>Current*||IGSS|||±100|nA|VGS= ±12V|
|Total Gate Chg Cont FET<br>~~E~~||QG<br>~~E~~|~~E~~|41<br>~~E~~|62<br>~~E~~|nC<br>~~E~~E<br>a|VGS=5V,  ID=15A, VDS=20V<br>E|
|Total Gate Chg Sync FET<br>~~E~~<br>ee||QG<br>~~E~~<br>ee|~~E~~<br>ee|36<br>~~E~~<br>ee|54<br>~~E~~<br>ee||VGS= 5V, VDS< 100mV<br>E|
|Pre-Vth<br>Gate-Source Charge<br>ee<br>es||QGS1<br>ee<br>ee|ee<br>ee|7.0<br>ee<br>eeee|ee<br>eea||VDS= 20V, ID= 15A<br>a|
|Post-Vth<br>Gate-Source Charge<br>es||QGS2<br>ee|ee|2.3<br>eeee|eea|||
|Gate to Drain Charge<br>es||QGD<br>ee|ee|12<br>eeee|eea||ID=15A, VDS=16V<br>a|
|Switch Chg(Qgs2+ Qgd)<br>es <br>rs<br>Po||Qsw<br> ee <br>rs<br>eees|ee <br>rs<br>es|14<br> eeee<br>rs|21<br>eea<br>rs||a|
|Output Charge*<br>rs<br>es<br>Po<br>rrrrti—(i‘“‘<~i||Qoss<br>rs<br>es<br>eees<br>rrrrti—(i‘“‘<~i|rs<br>es<br>es|30<br>rs<br>es|45<br>rs<br>es||VDS= 16V, VGS= 0|
|Gate Resistance<br>Po<br>rrrrti—(i‘“‘<~i||RG<br>eees<br>rrrrti—(i‘“‘<~i<br>ee|es<br>ee|1.5<br>ee|3.0<br>ee|Ω||
|Turn-on Delay Time<br>Po<br>rrrrti—(i‘“‘<~i<br>ee||td (on)<br>eees<br>rrrrti—(i‘“‘<~i<br>ee<br>ee|es<br>ee<br>ee<br>ee|14<br>ee<br>ee<br>ee|ee<br>ee|ns|VDD= 16V, ID= 15A<br>VGS= 5V<br>Clamped Inductive Load|
|Rise Time<br>es||tr<br>ee <br>es<br>ee|ee<br>es<br>ee<br>ee|36<br>ee<br>es<br>ee<br>ee|ee<br>es<br>ee|||
|Turn-off Delay Time<br>ee||td (off)<br>ee<br>ee<br>ee|ee <br>ee<br>ee<br>es|96<br> ee<br>ee<br>ee|ee<br>ee|||
|Fall Time<br>es||tf<br>ee <br>es<br>ee<br>es|ee<br>es<br>es|10<br>ee <br>es<br>ee|ee<br>es<br>ee|||
|Input Capacitance<br>ee||Ciss<br>ee <br>ee<br>es<br>ee|–<br> es<br>ee<br>Ge|3780<br>ee<br>ee|–<br>ee<br>ee|pF<br>–|VDS= 16V, VGS= 0|
|Output Capacitance<br>es||Coss<br>es<br>es<br>ee<br>ee|–<br>es<br>Ge<br>ee|1060<br>ee<br>es<br>ee|–<br>ee<br>es|||
|Reverse Transfer Capacitance<br>a||Reverse Transfer Capacitance<br>ee <br>a<br>ee|Crss<br> Ge<br>a<br>ee|–<br>a<br>ee|130|||
|**Source-Drain Rating & Characteristics**<br>ee ee<br>rsGsrs<br>rstsrs(||||||||
|**Parameter**<br>rsGs<br>Ss|Gs<br>a||**Min**<br>rs<br>a|**Typ**<br>rs|**Max**<br>ts|**Units**<br>rs(|**Conditions**<br>(|
|Diode Forward<br>Voltage*<br>rsGs<br>Ss<br>oe<br>||VSD<br>Gs <br>a<br>feet||rs<br>a<br>feet|rs <br>feet|1.3<br> ts <br>feet|V<br> rs(<br>feet|IS= 15A<br>, VGS= 0V<br>(<br>feet|
|Reverse Recovery<br>Charge<br>Ss <br>oe<br>||Qrr<br> a<br>feet||a<br>feet|120<br>feet|feet|nC<br>feet|di/dt~700A/µs<br>VDS= 16V, VGS= 0V, IS= 15A<br>feet|
|Reverse Recovery<br>Charge (with Parallel<br>Schottky)<br>oe<br>||Qrr(s)<br>feet||feet|150<br>feet|feet|nC<br>feet|di/dt = 700A/µs<br>(with 10BQ040)<br>VDS= 16V, VGS= 0V, IS= 15A<br>feet|



**Notes:** ® Repetitive rating; pulse width limited by max. junction temperature. 

Pulse width ≤ 400 µs; duty cycle ≤ 2%. 

When mounted on 1 inch square copper board, t < 10 sec. 

Typ = measured - Qoss 

ypical values  measured at VGS = 4.5V, IF = 15A. 

www.irf.com 

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## IRF7809AVPbF 

**==> picture [441 x 478] intentionally omitted <==**

**----- Start of picture text -----**<br>
 1000 VGS  1000 VGS<br>TOP 10V ct re TOP 10V ee<br>4.5V 4.5V<br>3.7V | 3.7V eT<br>3.5V3.3V 1 a | | 3.5V3.3V |<br>3.0V2.7V en ll 3.0V2.7V a<br>BOTTOM 2.5V BOTTOM 2.5V<br>iN S00 MTU HUAI|<br> 100  100<br>ee // SP -—— if LSS ee ee eee ee<br>el a / 0 ee eee ell ER)” a) . ee eee<br>_<br>P61 2 ee el<br>2.5V<br>|eV ZG 2.5V all |DY| OYPAT] M T<br>20µs PULSE WIDTH 20µs PULSE WIDTH<br>aA T  = 25J °C Ai Y Us 7 T  = 150 | J el °C<br> 10  10<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 1000 2.0<br>SS ID = 15A<br>Eeaeeee ee ee eee PEELE EEL<br>1.5<br>ee ee ee ee eee pes<br>PT Ty eal<br> 100 faeeeeeeee 1.0 Pee<br>T  = 150  CJ °<br>-— == ee ae === ETALLETT<br>eeSeepee eee eee eee TOLLE- EEL<br>T  = 25  CJ ° 0.5<br>V      = 15VDS<br> 10 Pa 20µs PULSE WIDTH 0.0 EEE V EE GS= 10V L<br>2.4 2.6 2.8 3.0 3.2 3.4 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>D D<br>I   ,  Drain-to-Source Current (A) I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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3 

## IRF7809AVPbF 

**==> picture [438 x 474] intentionally omitted <==**

**----- Start of picture text -----**<br>
6000 10<br>VGS = 0V, f = 1MHz ID = 15A<br>5000 —H CCCissrssoss === CCCgsgdds + C+ Cgd ,gd C      SHORTEDds 8 pp fet VDS = 20V E ye<br>| PTTL aoa<br>4000 Po SERRERRREEED<br>Pr Ciss 6 ZA<br>PC PTET ELLE<br>3000<br>I NC E PTTL TELE LTA ELT<br>4<br>2000 SE PTY PT DATTT<br>PRI ll TTT TAT TT<br>Coss<br>PT, TT 2 a eedeeeeeeene<br>1000 PPTLTTL<br>STI SP [Si] vA<br>Crss<br>0 i 0 VEL i EEL [TEEPE]<br> 1  10  100 0 10 20 30 40 50 60 70<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000  1000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br> 100 PTT tT | Ty | PC<br>T  = 150  CJ °  100 10us<br>=a S=— === payeespe =ea ll<br> 10 PT i7A TT Ty Pe 100us<br>== 2 ° a CTS iT<br>T  = 25  CJ<br> 10 1ms<br>SSR SSSR e S<br> 1 PF i/i 7} | | rt tT Se eeeee e<br>0.1 oePE V      = 0 V GS  1 R  T T Single PulseAJ = 25  C= 150  C° ° E CI S 10ms it<br>0.2 0.6 1.0 1.4 1.8 2.2 0.1  1  10  100<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


## **Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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4 

## IRF7809AVPbF 

**==> picture [431 x 473] intentionally omitted <==**

**----- Start of picture text -----**<br>
16 Nf EEE oa<br>> awe Ves D.U.T<br>12 PPNEEL EEL we | +-<br>PET TENET EI vee<br>≤ 1<br>8 Pi tL EENPA  | oo ≤ 0.1 % |<br>PE dT EL INLING Pulse— Width us<br>EEL Fig 10a.   Switching Time Test Circuit<br>4 PE tL N<br>VDS<br>COPEL ING 90%<br>0 PEELE Ee |<br>25 50 75 100 125 150 |<br>T   , Case TemperatureC (  C)° |<br>10%<br>pE EL EE VGS AY.\« >< >!| le<br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 100<br>D = 0.50<br>e ae eer — a<br> 10 0.20<br>0.10<br>Se ear! eereeerema es] EIS ESI SSS ee eel | EE ES<br>0.05<br>S r<br>ae =ag<br>0.02<br> 1<br>a 0.01<br>e e PDM<br>a a | | t1<br>0.1 a (THERMAL RESPONSE)SINGLE PULSE t2<br>Notes:<br>ai e 1. Duty factor D = t   / t1 2<br>ee 2. Peak T J = P DM x  Z thJA + TA<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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5 

## IRF7809AVPbF 

**==> picture [431 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.008<br>0.012<br>VGS = 4.5V<br>0.007 TT T a e<br>t ee} 0.010 fy ft<br>PEELE PN ID = 15A<br>0.006<br>VGS = 10V 0.008<br>0.005 uy ) 0.006 G PEELARREr<br>0 20 40 60 80 100 120 2.5 3.0 3.5 4.0 4.5<br>ID , Drain Current (A) VGS, Gate -to -Source Voltage  (V)<br>)<br>Ω<br>RDS (on) , Drain-to-Source On Resistance (<br>)<br> Ω<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 12.** On-Resistance Vs. Drain Current 

**Fig 13.** On-Resistance Vs. Gate Voltage 

**==> picture [436 x 284] intentionally omitted <==**

**----- Start of picture text -----**<br>
Current Regulator<br>Same Type as D.U.T.<br>QG<br>50KΩ<br>12V .2µF<br>.3µF QGS QGD<br>D.U.T. +-VDS VG 500 ID<br>VGS TOP 6.7A<br>a= 3mA tae Charge TOTO 9.5A<br>oe IG ID . 400 Nae BOTTOM 15A<br>Current —_ Sampling Resistors Ne<br>Fig 13a&b.   Basic Gate Charge Test Circuitand Waveform 300 GENRENaNeee<br>200 P NIX |tt<br>NONN<br>15V<br>100 P oKANALL<br>V(BR)DSS<br>tp VDS L DRIVER<br>~ || RS<br>R G D.U.T + 0<br>IAS - [V][DD] A 25 50 75 100 125 150<br>20V °<br>I AS jLech tp 0.01Ω EBSSE Starting T  , Junction TemperatureJ (  C)<br>Fig 14c.   Maximum Avalanche Energy<br>Fig 14a&b.   Unclamped Inductive Test circuit<br>Vs. Drain Current<br>and Waveforms<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


6 

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## IRF7809AVPbF 

SO-8  Package Outline Dimensions are shown in milimeters (inches) 

## SO-8 Part Marking Information 

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7 

## IRF7809AVPbF 

## SO-8 Tape and Reel 

Dimensions are shown in milimeters (inches) 

**==> picture [62 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>**----- End of picture text -----**<br>


**==> picture [211 x 274] intentionally omitted <==**

**----- Start of picture text -----**<br>
12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) ek FEED DIRECTION |<br> 330.00<br>g (12.992) \/<br>  MAX.<br>VAy<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

- NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 08/05 

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8 



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- [Supplier page](https://es.farnell.com/infineon/irf7809avtrpbf/mosfet-n-ch-30v-13-3a-soic/dp/2777386)
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