# Power MOSFET, N Channel, 30 V, 8.3 A, 0.017 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2839485/)

**URL**: https://novapart.co/products/IRF7807VTRPBF/power-mosfet-n-channel-30-v-83-a-0017-ohm-soic
**SKU**: IRF7807VTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2120
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 2.5W |
| Rds(On) Test Voltage | 4.5V |
| On Resistance Rds(On) | 0.017ohm |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 8.3A |
| Drain Source On State Resistance | 0.017ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2839485/)

PD-95210 

## IRF7807VPbF 

- N Channel Application Specific MOSFET 

## HEXFET ® Power MOSFET 

- Ideal for Mobile DC-DC Converters 

- Low Conduction Losses 

- Low Switching Losses 100% RG Tested Lead-Free 

## **Description** 

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduction of conduction and switching losses makes it ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. 

A pair of IRF7807V devices provides the best cost/ performance solution for system voltages, such as 3.3V and 5V. 

**==> picture [160 x 88] intentionally omitted <==**

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A<br>S 1 8 D<br>S 2 7 D<br>S 3 6 D<br>G 4 5 D<br>od a :<br>SO-8 Top View<br>**----- End of picture text -----**<br>


## DEVICE CHARACTERISTICS 

||**IRF7807V**|
|---|---|
|RDS(on)|17 mΩ|
|QG|9.5 nC|
|QSW|3.4 nC|
|QOSS|12 nC|



## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**|**Absolute Maximum Ratings**||||
|---|---|---|---|---|
|**Parameter**||**Symbol**<br>~~ee~~|**IRF7807V**<br>~~ee~~|**Units**|
|Drain-Source Voltage||VDS<br>~~ee~~|30<br>~~ee~~|V|
|Gate-Source Voltage||VGS<br>~~ee~~<br>~~Ee~~|±20<br>~~ee~~<br>~~Ee~~||
|Continuous Drain or Source<br>(VGS ≥4.5V)<br>~~O~~|Continuous Drain or Source<br>TA= 25°C|ID<br>~~po~~<br>~~ee~~|8.3<br>~~po~~|A<br>~~po~~<br>~~ee~~|
||TA= 70°C||6.6<br>~~po~~<br>~~ee~~||
|Pulsed Drain Current<br>~~O~~||IDM<br>~~po~~<br>~~ee~~<br>~~ee~~|66<br>~~po~~<br>~~ee~~<br>||
|Power Dissipation<br>~~O~~<br>~~°~~|TA= 25°C|PD<br>~~po~~<br>~~ee~~<br>~~a~~<br>~~ee~~|2.5<br>~~po~~<br>~~ee~~<br>~~eee~~<br>|W<br>~~po~~<br>~~eee~~<br>~~ee~~|
||TA= 70°C||1.6<br>~~eee~~<br>~~ee~~||
|Junction & Storage Temperature Range<br>~~°~~<br>~~©~~<br>~~——~~||TJ, TSTG<br>~~a ~~<br>~~ee~~<br>~~——~~|-55  to 150<br> ~~eee~~<br>~~ee~~|°C<br>~~eee~~<br>~~ee~~|
|Continuous Source Current  (Body Diode)<br>~~©~~<br>~~——~~||IS<br>~~ee ~~<br>~~——~~|2.5<br> ~~ee~~|A<br>~~ee~~|
|Pulsed Source Current<br>~~©~~<br>~~——~~||ISM<br>~~——~~|66||



## **Thermal Resistance** 

|**Thermal Resistance**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**|**Typ**|**Max**|**Units**|
|Maximum Junction-to-Ambient|RθJA|–––|50|°C/W|
|Maximum Junction-to-Lead|RθJL|–––|20||



11/3/04 

## IRF7807VPbF 

## **Electrical Characteristics** 

|**Electrical Characteristics**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Min**|**Typ **|**Max **|**Units**|**Conditions**|
|Drain-Source Breakdown Voltage|BVDSS<br>~~a~~|30<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= 250µA<br>~~ee~~|
|Static Drain-Source On-Resistance|RDS(on)<br>~~a~~<br>~~a~~|–––<br>~~ee~~<br>~~ee~~|17<br>~~ee~~<br>~~ee~~|25<br>~~ee~~<br>~~ee~~|mΩ<br>~~ee~~<br>~~ee~~|VGS= 4.5V,ID= 7.0A<br>~~ee~~<br>~~ee~~|
|Gate Threshold Voltage|VGS(th)<br>~~a~~<br>~~a~~|1.0<br>~~ee~~<br>~~|~~|–––<br>~~ee~~<br>~~|~~|3.0<br>~~ee~~<br>|V<br>~~ee~~<br>|VDS= VGS,ID= 250µA<br>~~ee~~|
|Drain-Source Leakage Current|IDSS<br>~~a~~|–––<br>~~|~~<br>~~|~~|–––<br>~~||~~<br>~~|~~|100<br>~~|~~<br>~~|~~|µA<br>~~|~~|VDS= 30V,VGS= 0|
|||–––<br>~~|~~<br>~~|~~<br>~~|~~|–––<br>~~|~~<br>~~|~~<br>~~|~~|20<br><br>~~|~~<br>||VDS= 24V,VGS= 0|
|||–––<br>~~|~~<br>~~|~~|–––<br>~~|~~<br>~~||~~|100<br>~~|~~<br>~~|~~||VDS= 24V,VGS= 0,TJ= 100°C|
|Gate-Source Leakage Current*|IGSS<br>~~a~~<br><br>~~a~~|–––<br>~~|~~<br>~~ee~~|–––<br>~~|~~|±100<br>|nA|VGS= ± 20V|
|Total Gate Charge*|QG<br>~~a~~<br>~~a~~ <br>~~a~~|–––<br> ~~ee~~|9.5|14|nC<br>~~ee~~|VDS= 16V<br>VGS= 5V, ID= 7.0A|
|Pre-Vth Gate-Source Charge|QGS1<br> <br>~~a~~<br>~~a~~|–––<br> ~~ee~~<br>~~ee~~|2.3|–––|||
|Post-Vth Gate-Source Charge|QGS2<br>~~a~~<br>~~a~~|–––<br>~~ee~~<br>~~ee~~|1.0|–––|||
|Gate-to-Drain Charge|QGD<br>~~a~~<br>~~a~~<br>~~a~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.4|–––|||
|Switch Charge(Qgs2+ Qgd)|QSW<br>~~a~~<br>~~a~~|–––<br>~~ee~~<br>~~ee~~|3.4|5.2|||
|Output Charge*|QOSS<br>~~a~~<br>~~a~~<br>~~es~~|–––<br>~~ee~~|12<br>~~ee~~|16.8<br>~~ee~~||VDS= 16V, VGS= 0<br>~~ee~~|
|Gate Resistance|RG<br>~~a~~<br>~~es~~<br>~~a~~|0.9<br>~~ee~~|–––<br>~~ee~~|2.8<br>~~ee~~|Ω<br>~~ee~~|~~ee~~|
|Turn-On DelayTime|td(on)<br>~~es~~<br>~~a~~<br>~~a~~|–––<br>~~ee~~<br>~~ee~~|6.3<br>~~ee~~|–––<br>~~ee~~|ns<br>~~ee~~|VGS= 5V, RG= 2Ω<br>VDD= 16V<br>ID= 7A<br>Resistive Load<br>~~ee~~|
|Rise Time|tr<br>~~a~~<br>~~a~~<br>~~a~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.2|–––|||
|Turn-Off DelayTime|td(off)<br>~~a~~<br>~~a~~|–––<br>~~ee~~<br>~~ee~~|11|–––|||
|Fall Time|tf<br>~~a~~<br>~~a~~|–––<br>~~ee~~|2.2|–––|||



## **Source-Drain Ratings and  Characteristics** 

|**Parameter**|**Symbol**|**Min**|**Typ **|**Max **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|Diode Forward Voltage*|VSD<br>~~a ~~|–––<br> ~~ee~~|–––<br>~~ee~~|1.2<br>~~ee~~|V<br>~~ee~~|IS= 7.0A<br>,VGS= 0V<br>~~ee~~|
|Reverse Recovery Charge<br>ef<br>~~o~~<br>~~|~~|Qrr<br>|<br>~~|~~<br>~~|~~|–––<br>~~tt~~<br>~~tt~~|64<br>~~tt~~<br>~~tt~~|–––<br>~~tt~~<br>~~tt~~|nC|di/dt = 700A/µs<br>VDS= 16V,VGS= 0V,IS= 7.0A|
|Reverse Recovery Charge<br>(with Parallel Schottsky)<br>~~o~~<br>~~|~~|Qrr(s)<br>~~|~~<br>~~|~~|–––<br>~~tt~~|41<br>~~tt~~|–––<br>~~tt~~||di/dt = 700A/µs , (with 10BQ040)<br>VDS= 16V,VGS= 0V,IS= 7.0A|



## **Notes:** 

Repetitive rating; pulse width limited by max. junction temperature. 

Pulse width ≤ 400 µs; duty cycle ≤ 2%. 

When mounted on 1 inch square copper board 

Typ = measured - Qoss 

© ypical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS = 5.0V, IF = 7.0A. 

θ 

- Device are 100% tested to these parameters. 

www.irf.com 

2 

## IRF7807VPbF 

## **Power MOSFET Selection for DC/DC Converters** 

## **Control FET** 

Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are only about one half of the total losses. 

Power losses in the control switch Q1 are given by; 

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4<br>Drain Current<br>1<br>Gate Voltage<br>t2<br>t3<br>t1<br>V<br>GTH<br>t0<br>2<br>Drain Voltage<br>Ce GS1 GS2 GD<br>Q Q Q<br>**----- End of picture text -----**<br>


This can be expanded and approximated by; 

Figure 1:  Typical MOSFET switching waveform 

**==> picture [207 x 109] intentionally omitted <==**

This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. 

Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 1. 

## **Synchronous FET** 

The power loss equation for Q2 is approximated by; 

**==> picture [188 x 102] intentionally omitted <==**

*dissipated primarily in Q1. 

Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached (t1) and the time the drain current rises to Idmax (t2) at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. 

Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure 2 shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitance’s Cds and Cdg when multiplied by the power supply input buss voltage. 

www.irf.com 

3 

## IRF7807VPbF 

For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant.  Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. 

The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of  Q2 and can induce a voltage spike on the gate that is sufficient to turn 

the MOSFET on, resulting in shoot-through current . The ratio of Q /Q must be minimized to reduce the gd gs1 potential for Cdv/dt turn on. 

Spice model for IRF7807V can be downloaded in machine readable format at www.irf.com. 

Figure 2:  Qoss Characteristic 

## **Typical Mobile PC Application** 

The performance of these new devices has been tested in circuit and correlates well with performance predictions generated by the system models. An advantage of this new technology platform is that the MOSFETs it produces are suitable for both control FET and synchronous FET applications. This has been demonstrated with the 3.3V and 5V converters. (Fig 3 and Fig 4). In these applications the same MOSFET IRF7807V was used for both the control FET (Q1) and the synchronous FET (Q2). This provides a highly effective cost/performance solution. 

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93<br>92 ee<br>91 a ee ee<br>90<br>—— Eee<br>89<br>88<br>87 rs ae ee<br>86 Vin=24V<br>85 el Vin=14V es<br>84 a Vin=10V fp<br>83 oe —a<br>1 2 3 4 5<br>Load current (A)<br>  Figure 3<br>4<br>Efficiency (%)<br>**----- End of picture text -----**<br>


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95<br>94 = ee ee ee<br>93 ae ee ee eee<br>92<br>ee ee ee ree<br>91<br>90<br>Vin=24V<br>89<br>Vin=14V<br>88<br>pe | Vin=10V |__|<br>87<br>ee<br>86 ee<br>1 2 3 4 5<br>Load current (A)<br>  Figure 4<br>www.irf.com<br>Efficiency (%)<br>**----- End of picture text -----**<br>


## IRF7807VPbF 

**==> picture [437 x 479] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0 ID = 7.0A 5 ID = 7.0A<br>VDS = 16V<br>PE ELE 4 CT T<br>1.5<br>PITT Ty Sean n aan<br>eT) =| 3 FEEL CE<br>1.0 LE er TTTTT<br>To a<br>2<br>TTT TT PAT<br>0.5<br>PLATT Vea<br>1<br>TTT TTT A<br>VGS = 4.5V<br>0.0 EEE PEE | VEEL<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 0<br>T  , Junction TemperatureJ (  C)° 0 2Q   , Total Gate Charge (nC)G 4 6 8 10 12<br>Fig 5.   Normalized On-Resistance Fig 6.   Typical Gate Charge Vs.<br>Vs. Temperature Gate-to-Source Voltage<br>0.030  100<br>T OD) | Eee<br>0.025 T  = 150  CJ °<br>P re ELLE EEE LL  10 BEane aden<br>0.020 C PN ELLEETEEL j SsS|<br>ID = 7.0A T  = 25  CJ °<br>TN  1 FA RA<br>0.015<br>Pt Pr<br>0.010 PELE 0.1 O A V      = 0 V GS<br>0.2 0.4 0.6 0.8 1.0 1.2<br>2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0<br>V     ,Source-to-Drain Voltage (V)SD<br>VGS, Gate -to -Source Voltage  (V)<br>(Normalized)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>I     , Reverse Drain Current (A)SD<br>)<br>Ω<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 7.** On-Resistance Vs. Gate Voltage 

**Fig 8.** Typical Source-Drain Diode Forward Voltage 

www.irf.com 

5 

## IRF7807VPbF 

**==> picture [422 x 193] intentionally omitted <==**

**----- Start of picture text -----**<br>
 100<br>D = 0.50<br>e e i nll<br>nf<br> 10 0.20<br>0.10<br>0.05<br>= eee<br>PDM<br>0.02<br> 1 e ee<br>—p 0.01 ereRt t1<br>t2<br>= SINGLE PULSE<br>S (THERMAL RESPONSE) a i Notes:<br>1. Duty factor D = t   / t1 2<br>Et o 2. Peak T J = P DM x  Z thJA + TA<br>0.1 com tat<br>0.00001 0.0001 0.001 0.01 0.1  1  10<br>t  , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


Figure 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

www.irf.com 

6 

## IRF7807VPbF 

## SO-8  Package Outline 

Dimensions are shown in milimeters (inches) 

**==> picture [292 x 270] intentionally omitted <==**

**----- Start of picture text -----**<br>
INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>7 ooa b .013 .020 0.33 0.51<br>8 7 a 6 5 ————o c .0075 .0098 0.19 0.25<br>E 6 0.25 [.010] H A === DE .189.1497 .1968.1574 4.803.80 5.004.00<br>1 2 3 4<br>e .050  BASIC 1.27  BASIC<br>_ ee<br>ee e1 .025  BASIC 0.635  BASIC<br>ee H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e<br>ok = L .016 .050 0.40 1.27<br>a y  0°  8°  0°  8°<br>- e1 A K x 45°<br>C<br>y<br>0.10 [.004]<br>Tanermi 8X b A1 c if 8X L 8X c<br>0.25 [.010]  C A B 0 7<br>FOOTPRINT<br>NOTES:<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER nae<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>:      MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. | CO0C<br>6.46 [.255]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>s)      MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. oan<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>     A SUBSTRATE.<br>O 3X 1.27 [.050] tne 8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## SO-8 Part Marking Information (Lead-Free) 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

DATE CODE (YWW) 

P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y =  LAST DIGIT OF THE YEAR ron’ XXXX WW =  WEEK INTERNATIONAL F7101 A =  ASSEMBLY SITE CODE RECTIFIER LOT CODE LOGO ~~ee~~ 

PART NUMBER 

www.irf.com 

7 

## IRF7807VPbF 

## SO-8 Tape and Reel 

Dimensions are shown in milimeters (inches) 

**==> picture [174 x 112] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>& O66) fF<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) | FEED DIRECTION a<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

**==> picture [154 x 68] intentionally omitted <==**

**----- Start of picture text -----**<br>
 330.00<br>(12.992)<br>  MAX.<br>SY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 11/04 

www.irf.com 

8 



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- [Supplier page](https://es.farnell.com/en-ES/infineon/irf7807vtrpbf/mosfet-n-ch-30v-8-3a-soic/dp/2839485)
---

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