# Power MOSFET, N Channel, 30 V, 8.3 A, 0.025 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2725916RL/)

**URL**: https://novapart.co/products/IRF7807TRPBF/power-mosfet-n-channel-30-v-83-a-0025-ohm-soic
**SKU**: IRF7807TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3410
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:8.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 8.3A |
| Drain Source On State Resistance | 0.025ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725916RL/)

PD – 95290 

## IRF7807PbF IRF7807APbF **HEXFET[®] Chip-Set for DC-DC Converters** 

- N Channel Application Specific MOSFETs 

- Ideal for Mobile DC-DC Converters 

- Low Conduction Losses 

- Low Switching Losses 

- Lead-Free 

## **Description** 

These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. 

A pair of IRF7807 devices provides the best cost/ performance solution for system voltages, such as 3.3V and 5V. 

**==> picture [160 x 88] intentionally omitted <==**

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A<br>S 1 8 D<br>S 2 7 D<br>S | 3 6 D<br>E i:<br>G 4 5 D<br>SO-8 Top View<br>**----- End of picture text -----**<br>


**==> picture [117 x 75] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||
|---|---|---|
|Device Features|
|IRF7807  IRF7807A|
|Vds|30V|30V|
|Rds(on)|25mΩ|25mΩ|
|Qg|17nC|17nC|
|Qsw|5.2nC|
|Qoss|16.8nC|16.8nC|

**----- End of picture text -----**<br>


**Absolute Maximum Ratings** 

**==> picture [433 x 221] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||
|---|---|---|---|---|---|---|
|es|Parameter|Symbol|IRF7807|IRF7807A|Units|
|Drain-Source Voltage|VDS|30|V|
|Gate-Source Voltage|VGS|±12|
|—|
|Continuous Drain or Source|25°C|ID|8.3|8.3|A|
|Current (VGS ≥|4.5V)|70°C|6.6|6.6|
|Eeee|Pulsed Drain Current|IDM|66|66|
|Power Dissipation|25°C|PD|2.5|W|
|eere|70°C|Oe een|1.6|ee|
|Junction & Storage Temperature Range|TJ,|TSTG|–55 to 150|°C|
|SennnD|Continuous Source Current (Body Diode)|IS|2.5|2.5|A|
|rs|Pulsed source Current|es|ISM|es|66|66|
|Thermal Resistance|
|Parameter|Max.|Units|
|Maximum Junction-to-Ambient|RθJA|50|°C/W|
|eees|ee|

**----- End of picture text -----**<br>


www.irf.com 

1 09/22/04 

## IRF7807/APbF 

|IRF7807/APbF|IRF7807/APbF|~~ee~~|~~ee~~|~~ee~~|~~ee~~|~~ee~~|~~ee~~|International<br>TORRectifier|International<br>TORRectifier|
|---|---|---|---|---|---|---|---|---|---|
|**Electrical Characteristics**||IRF7807<br>~~ee~~|||IRF7807A<br>~~ee~~|||||
|**Parameter**<br>~~a~~|~~a~~|**Min**<br>~~ee~~<br>~~a~~|**Typ**<br>~~ee~~<br>~~a~~|**Max**<br>~~ee~~<br>~~a~~|**Min**<br>~~a~~|**Typ**<br>~~ee~~<br>~~a~~|**Max **<br>~~ee~~<br>~~a~~|**Units**<br>~~a~~|**Conditions**<br>~~a~~|
|Drain-to-Source<br>Breakdown Voltage*<br>~~a~~<br>es|V(BR)DSS<br>~~a~~|30<br>~~a~~<br>a|–<br>~~a~~<br>a|–<br>~~a~~|30<br>~~a~~|–<br>~~a~~|–<br>~~a~~|V<br>~~a~~|VGS= 0V, ID= 250µA<br>~~a~~|
|Static Drain-Source<br>on Resistance*<br>~~es~~<br>es|RDS(on)<br>~~es~~<br>es|~~es~~<br>a<br>ee|17<br>~~es~~<br>a<br>eee|25<br>~~es~~<br>es|~~es~~<br>er|17<br>~~es~~<br>rs|25<br>~~es~~<br>td|mΩ<br>~~es~~<br>te|VGS= 4.5V, ID= 7A<br>~~es~~|
|Gate Threshold Voltage*<br>es|VGS(th)<br>es|1.0<br>a<br>ee|a<br>eee|es|1.0<br>er|rs|td|V<br>te|VDS= VGS, ID= 250µA|
|Drain-Source Leakage<br>Current*<br>es|IDSS<br>es|a<br> ee|a<br> eee|30<br>es|er|rs|30<br> td|µA<br> te|VDS= 24V, VGS= 0|
|||||150|||150||VDS= 24V, VGS= 0,<br>Tj = 100°C|
|Gate-Source Leakage<br>Current*|IGSS|||±100|||±100|nA|VGS= ±12V|
|Total Gate Charge*|Qg||12|17||12|17|nC<br>re<br>rs|VGS= 5V, ID= 7A|
|Pre-Vth<br>Gate-Source Charge<br>eea|Qgs1<br>a||2.1|||2.1|||VDS= 16V, ID= 7A<br>~~a~~|
|Post-Vth<br>Gate-Source Charge<br>eea|Qgs2<br>a||0.76|||0.76||||
|Gate to Drain Charge<br>eea|Qgd<br>a||2.9|||2.9||||
|Switch Charge*<br>(Qgs2+ Qgd)<br>eea<br>a|QSW<br>a<br>esGs|Gs|3.66<br>eee|5.2<br>rs|rs|3.66<br>esOd|Od|||
|Output Charge*<br>eea<br>a<br>ee|Qoss<br>a<br>esGs<br>eeGs|Gs<br>Gs|14<br>eee<br>tees|16.8<br>rs<br>terres|rs<br>rs|14<br>esOd<br>ss|16.8<br>Od<br>ss||VDS= 16V, VGS= 0<br>~~a~~|
|Gate Resistance<br>a<br>ee|Rg<br>esGs<br>eeGs<br>ee|Gs <br>Gs<br>eee|1.2<br> eee <br>tees<br>ee|rs <br>terres<br>ee|rs <br>rs<br>ee|1.2<br> esOd<br>ss<br>ee|Od <br>ss|Ω<br> re<br>rs||
|Turn-on Delay Time<br>ee<br>ee|g<br>td(on)<br>eeGs<br>ee<br>ee<br>es|Gs <br>ee<br>eee<br>e|12<br> tees <br>ee<br>ee<br>ee|terres<br>ee<br>ee<br>ee|rs <br>ee<br>ee<br>ee|12<br> ss<br>ee<br>ee<br>ee|ss<br>ee|ns<br>rs|VDD= 16V<br>ID= 7A<br>Rg= 2Ω<br>VGS= 4.5V<br>Resistive Load|
|Rise Time<br>e|tr<br>ee <br>e<br>es<br>es|eee <br>e**e**<br>e<br>ee|17<br> ee <br>**e**<br>ee<br>eeee|ee <br>**e**<br>ee<br>ee|ee<br>**e**<br>ee<br>ee|17<br>ee<br>**e**<br>ee<br>ee|**e**<br>ee|||
|Turn-off Delay Time<br>es|td(off)<br>es<br>es<br>es|e <br>es<br>ee|25<br> ee <br>es<br>eeee|ee <br>es<br>ee|ee <br>es<br>ee|25<br> ee<br>es<br>ee|es<br>ee|||
|Fall Time|tf<br>es|ee|6<br> eeee|ee|ee|6<br>ee|ee|||
|**Source-Drain Rating & Characteristics**<br>rsrsrsSsrsrd<br>tsOs||||||||||
|**Parameter**<br>rs<br>es|rs<br>a|**Min**<br>rsSs<br>a|**Typ**<br>Ss|**Max**<br>rs|**Min**<br>rd|**Typ**<br>ts|**Max **<br>Os|**Units**<br>Os|**Conditions**|
|Diode Forward<br>Voltage*<br>rs <br>es<br>es|VSD<br> rs <br>a<br>ee|rsSs<br>a<br>ee|Ss <br>ee|1.2<br> rs <br>ee|rd|ts|1.2<br> Os|V<br>Os|IS= 7A<br>, VGS= 0V|
|Reverse Recovery<br>Charge<br>es <br>es<br>ET|Qrr<br> a<br>ee<br>ETGT|a<br>ee<br>GT|80<br>ee<br>GT|ee<br>GT|GT|80||nC|di/dt = 700A/µs<br>VDS= 16V, VGS= 0V, IS= 7A|
|Reverse Recovery<br>Charge (with Parallel<br>Schotkky)<br>es <br>ET|Qrr(s)<br> ee<br>ETGT|ee<br>GT|50<br>ee<br>GT|ee<br>GT|GT|50|||di/dt = 700A/µs<br>(with 10BQ040)<br>VDS= 16V, VGS= 0V, IS= 7A|



Repetitive rating; pulse width limited by max. junction temperature. 

Pulse width ≤ 300 µs; duty cycle ≤ 2%. 

When mounted on 1 inch square copper board, t < 10 sec. 

Typ = measured - Qoss 

* Devices are 100% tested to these parameters. 

www.irf.com 

2 

## IRF7807/APbF 

## **Power MOSFET Selection for DC/DC Converters** 

## **Control FET** 

Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are only about one half of the total losses. 

Power losses in the control switch Q1 are given by; 

**==> picture [185 x 14] intentionally omitted <==**

This can be expanded and approximated by; 

**==> picture [207 x 109] intentionally omitted <==**

This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. 

Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 1. 

**==> picture [201 x 154] intentionally omitted <==**

**----- Start of picture text -----**<br>
4<br>Drain Current<br>1<br>Gate Voltage<br>t2<br>t3<br>t1<br>V<br>GTH<br>t0<br>2<br>Drain Voltage<br>Ce GS1 GS2 GD<br>Q Q Q<br>**----- End of picture text -----**<br>


Figure 1:  Typical MOSFET switching waveform 

## **Synchronous FET** 

The power loss equation for Q2 is approximated by; 

**==> picture [188 x 102] intentionally omitted <==**

*dissipated primarily in Q1. 

Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached (t1) and the time the drain current rises to Idmax (t2) at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. 

Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure 2 shows how Qoss is formed by the parallel combination of the voltage dependant (non-linear) capacitance’s Cds and Cdg when multiplied by the power supply input buss voltage. 

www.irf.com 

3 

## IRF7807/APbF 

For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant.  Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. 

The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of  Q2 and can induce a voltage spike on the gate that is sufficient to turn 

the MOSFET on, resulting in shoot-through current . The ratio of Q /Q must be minimized to reduce the gd gs1 potential for Cdv/dt turn on. 

Spice model for IRF7807 can be downloaded in machine readable format at www.irf.com. 

Figure 2:  Qoss Characteristic 

## **Typical Mobile PC Application** 

The performance of these new devices has been tested in circuit and correlates well with performance predictions generated by the system models. An advantage of this new technology platform is that the MOSFETs it produces are suitable for both control FET and synchronous FET applications. This has been demonstrated with the 3.3V and 5V converters. (Fig 3 and Fig 4). In these applications the same MOSFET IRF7807 was used for both the control FET (Q1) and the synchronous FET (Q2). This provides a highly effective cost/performance solution. 

3.3V Supply : Q1=Q2=IRF7807 

5V Supply : Q1=Q2=IRF7807 

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93 95<br>92<br>919089 aAef[areeee ee 9493 eeee<br>et fee 92 SS<br>88<br>87 I Coa OO 91<br>86 a Vin = 10V Once Sre e OO Pec Vin = 10V nt<br>85  a Vin = 14V 90 Vin = 14V<br>Vin = 24V<br>Vin=24V<br>84 SP tse I ee 89 So<br>1 1.5 2 2.5 3 3.5 4 4.5 5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>Load Current (A) Load Current (A)<br>  Figure 3   Figure 4<br>4 www.irf.com<br>Efficiency (%) Efficiency (%)<br>**----- End of picture text -----**<br>


## IRF7807/APbF 

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**----- Start of picture text -----**<br>
Typical Characteristics<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IRF7807<br>e= 1 . 5ffet Le]iw<br>LA |<br>d<br>§ 10 ya<br>28 a—<br>et 0 . 5 E ELL ELL at)<br>6 0 - 40 - 20 00 20 40 60 80 100 120 140<br>T,, Junction Temperature (°C)<br>  Figure 5. Normalized On-Resistance vs. Temperature<br>**----- End of picture text -----**<br>


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IRF7807A<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
  Figure 6. Normalized On-Resistance vs. Temperature<br>**----- End of picture text -----**<br>


Figure 7. Typical Gate Charge vs. Gate-to-Source Voltage 

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**----- Start of picture text -----**<br>
  Figure 8. Typical Gate Charge vs. Gate-to-Source Voltage<br>**----- End of picture text -----**<br>


Figure 9. Typical Rds(on) vs. Gate-to-Source Voltage 

Figure 10. Typical Rds(on) vs. Gate-to-Source Voltage 

www.irf.com 

5 

## IRF7807/APbF 

**==> picture [419 x 228] intentionally omitted <==**

**----- Start of picture text -----**<br>
IRF7807 IRF7807A<br> 10  10<br>aeea A eeAeeA aeeAee eeA<br>me eee ee fr | | | Y | | | A]<br>T  = 150  CJ ° T  = 150  CJ °<br> 1 e fiAtf  1 e AunesunA<br>ena ) eee eee T  = 25  CJ ° [| |H+| [fF [| T{IT[ tT) - T  = 25  CJ ° [|<br>re ee ee Pe ee ee<br>PALE TAL pS A<br>LEAL V      = 0 V GS LE AL V      = 0 V GS<br>0.1 0.1<br>0.4 0.5 0.6 0.7 0.8 0.9 0.4 0.5 0.6 0.7 0.8 0.9<br>V     ,Source-to-Drain Voltage (V)SD V     ,Source-to-Drain Voltage (V)SD<br>  Figure 11. Typical Source-Drain Diode Forward Voltage   Figure 12. Typical Source-Drain Diode Forward Voltage<br>I     , Reverse Drain Current (A)SD I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
 100<br>D = 0.50<br>S e el<br>ee ma eel es ee<br>0.20<br> 10<br>0.10<br>0.05<br>e ee Tn eo<br>0.02 me ff Pe PDM<br> 1 eee 0.01 TTITTT<br>SINGLE PULSE t 1<br>ee (THERMAL RESPONSE) eee<br>a tt ee tEH t 2<br>Notes:<br>1. Duty factor D = t   / t1 2<br>Cen CCC 2. Peak T J = P DM x  Z thJA + TA<br>0.1<br>0.001 0.01 0.1  1  10  100  1000<br>t  , Rectangular Pulse Duration (sec)1<br>  Figure 13. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


www.irf.com 

6 

## IRF7807/APbF 

## **SO-8 Package Outline** 

Dimensions are shown in millimeters (inches) 

**==> picture [356 x 336] intentionally omitted <==**

**----- Start of picture text -----**<br>
INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>b .013 .020 0.33 0.51<br>non 8 7 6 5 ff ee c .0075 .0098 ee 0.19 0.25 ee<br>ra E : 6 H EFes D .189 .1968 4.80 5.00<br>0.25 [.010]  A E .1497 .1574 3.80 4.00<br>1 2 3 4<br>e .050  BASIC 1.27  BASIC<br>—— en<br>e1 .025  BASIC 0.635  BASIC<br>TOT TT | aen ee ee<br>H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X oH e he escoer L .016 .050 0.40 1.27<br>y  0°  8°  0°  8°<br>es<br>e1 K x 45°<br>A<br>= FL C nai<br>y<br>JLSSe 8X b A1 n | : 0.10 [.004]  i S L f 8X L n 8X c 2)<br>fe. 0.25 [.010]  @ C TTI A B 7<br>FOOTPRINT<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>[rT]<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. | “Wood [|]<br>6.46 [.255]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>| gus<br>3X 1.27 [.050] Kak<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## NOTES: 

1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 

2.  CONTROLLING DIMENSION: MILLIMETER 

3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 

4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 

- 5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 

- 7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 

## **SO-8 Part Marking** 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

- XXXX 

- INTERNATIONAL F7101 a ~~c~~ ai 

- RECTIFIERLOGO TE EE 

- DATE CODE (YWW) P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) 

- Y =  LAST DIGIT OF THE YEAR WW =  WEEK 

- A =  ASSEMBLY SITE CODE 

LOT CODE 

PART NUMBER 

www.irf.com 

7 

## IRF7807/APbF 

## **SO-8 Tape and Reel** 

Dimensions are shown in millimeters (inches) 

**==> picture [59 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) ok FEED DIRECTION |<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

**==> picture [176 x 78] intentionally omitted <==**

**----- Start of picture text -----**<br>
 330.00<br>(12.992)<br>  MAX.<br>WAy<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/04 

www.irf.com 

8 



## Links

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- [Supplier page](https://es.farnell.com/infineon/irf7807trpbf/mosfet-n-ch-30v-8-3a-soic/dp/2725916RL)
---

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