# Power MOSFET, N Channel, 30 V, 16 A, 6800 µohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2777389RL/)

**URL**: https://novapart.co/products/IRF7805ZTRPBF/power-mosfet-n-channel-30-v-16-a-6800-ohm-soic
**SKU**: IRF7805ZTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8340
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.25V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 16A |
| Drain Source On State Resistance | 6800µohm |
| Gate Source Threshold Voltage Max | 2.25V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2777389RL/)

## IRF7805ZPbF 

HEXFET Power MOSFET 

## **Applications** 

High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. Lead-Free 

## **Benefits** 

Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 100% tested for Rg 

||HEXFET<br>Power MOSFET<br>®|Power MOSFET|
|---|---|---|
|**VDSS**|**RDS(on) max**|**Qg (typ.)**|
|**30V **|**6.8m @VGS = 10V**|**18nC**|



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## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-to-Source Voltage<br>~~Ge~~|30<br>~~Ge~~|V|
|VGS|Gate-to-Source Voltage<br>~~ee~~|± 20<br>~~ee~~||
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V<br>~~ee~~<br>~~Ge~~<br>~~re~~|16<br>~~ee~~<br>~~Ge~~<br>~~re~~|A<br>~~re~~|
|ID@ TA= 70°C<br>~~a~~|Continuous Drain Current, VGS@ 10V<br>~~re~~<br>~~a~~|12<br>~~re~~<br>||
|IDM<br>~~a~~|Pulsed Drain Current<br>~~re~~<br>~~a~~|120<br>~~re~~<br>||
|PD@TA= 25°C<br>~~a~~|Power Dissipation<br>~~re~~<br>~~aa~~<br>~~ee~~|2.5<br>~~re~~<br>~~a~~<br>~~ee~~|W<br>~~re~~<br>~~ee~~|
|PD@TA= 70°C|Power Dissipation<br>~~ee~~|1.6<br>~~ee~~||
||Linear Derating Factor<br>~~ee~~|0.02<br>~~ee~~|W/°C<br>~~ee~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 150|°C|



Notes hrough are on page 10 

www.irf.com 

1 06/30/05 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>~~Rs~~|**Min.**|**Typ.**|**Max. **<br>~~GO~~|**Units**<br>~~GO~~|**Conditions**<br>~~GO~~|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~Rs~~|30|–––|–––<br>~~GO~~|V<br>~~GO~~|VGS= 0V, ID= 250µA<br>~~GO~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~Rs~~<br>~~**e**e~~|–––<br>|0.023<br>~~||~~<br>|–––<br>~~GO~~<br>~~||~~<br>|V/°C<br>~~GO~~<br>|Reference to 25°C, ID= 1mA<br>~~GO~~<br>~~©—~~<br>|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~**e**e~~|–––<br>|5.5<br>~~||~~<br>|6.8<br>~~||~~<br>|mΩ<br>|VGS= 10V, ID= 16A<br>~~©—~~<br>|
|||–––<br>~~eee~~|7.0<br>~~||~~<br>~~eee~~|8.7<br>~~||~~<br>~~eee~~||VGS= 4.5V, ID= 13A<br>~~©—~~<br>~~ee~~|
|VGS(th)|Gate Threshold Voltage<br>~~**e**e~~|1.35<br>~~eee~~|–––<br>~~||~~<br>~~eee~~|2.25<br>~~||~~<br>~~eee~~|V<br>|VDS= VGS, ID= 250µA<br>~~©—~~<br>~~ee~~<br>~~eee~~|
|∆VGS(th)|Gate Threshold Voltage Coefficient<br>~~**e**e~~<br>~~s~~|–––<br>~~eee~~<br>~~s~~<br>~~ee eee~~|- 4.7<br>~~||~~<br>~~eee~~<br>~~s~~<br>~~eee~~|–––<br>~~||~~<br>~~eee~~<br>~~s~~<br>~~eee~~|mV/°C<br><br>~~s~~<br>~~eee~~||
|IDSS|Drain-to-Source Leakage Current<br>~~**e**e ~~<br>~~s~~<br>~~ee~~|–––<br> ~~eee~~<br>~~s~~<br>~~ee~~<br>~~ee eee~~<br>~~**|**~~|–––<br>~~||~~<br>~~eee~~<br>~~s~~<br>~~ee~~<br>~~eee~~<br>~~**|**~~|1.0<br>~~||~~<br>~~eee ~~<br>~~s~~<br>~~ee~~<br>~~eee~~|µA<br> <br>~~s~~<br>~~ee~~<br>~~eee~~|VDS= 24V, VGS= 0V<br>~~© —~~<br> ~~ee~~<br>~~ee~~<br>~~eee~~|
|||–––<br>~~ee~~<br>~~ee eee~~<br>~~**|**~~<br>~~ee~~|–––<br>~~ee~~<br>~~eee~~<br>~~**|**~~<br>~~ee~~|150<br>~~ee~~<br>~~eee~~||VDS= 24V, VGS= 0V, TJ= 125°C<br>~~ee~~<br>~~eee~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~ee eee~~<br>~~**|**~~<br>~~a~~<br>~~ee~~|–––<br>~~ee~~<br>~~eee~~<br>~~**|**~~<br>~~a~~<br>~~ee~~|100<br>~~ee~~<br>~~eee~~<br>~~a~~|nA<br>~~ee~~<br>~~eee ~~<br>~~a~~<br>~~G~~|VGS= 20V<br>~~ee~~<br> ~~eee~~<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~a~~|–––<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~rs~~|–––<br>~~a~~<br>~~ee~~<br>~~a~~<br>|-100<br>~~a~~<br>~~a~~<br>~~G~~||VGS= -20V<br>~~a~~<br>~~GO~~|
|gfs|Forward Transconductance<br>~~a~~<br>~~Rs~~|64<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~Rs~~<br>~~rs~~|–––<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~Rs~~<br>|–––<br>~~a~~<br>~~a~~<br>~~Rs~~<br>~~G~~|S<br>~~a~~<br>~~Rs~~<br>~~G~~|VDS= 15V, ID= 12A<br>~~a~~<br>~~Rs~~<br>~~GO~~|
|Qg|Total Gate Charge<br>~~es~~|–––<br>~~rs ~~<br>~~es~~|18<br> <br>~~es~~|27<br> ~~G~~<br>~~es~~|nC<br>~~G~~<br>~~GO~~|See Fig. 16<br>VDS= 15V<br>VGS= 4.5V<br>ID= 12A<br>~~GO~~|
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~|4.7<br>~~es~~|–––<br>~~es~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~|1.6<br>~~es~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain Charge<br>~~es~~|–––<br>~~es~~|6.2<br>~~es~~|–––<br>~~es~~|||
|Qgodr|Gate Charge Overdrive<br>~~es~~|–––<br>~~es~~|5.5<br>~~es~~|–––<br>~~es~~|||
|Qsw|Switch Charge (Qgs2+ Qgd)<br>~~es~~|–––<br>~~es~~<br>~~DD~~|7.8<br>~~es~~<br>~~DD~~|–––<br>~~es~~<br>~~GO~~|||
|Qoss|Output Charge<br>~~RD~~<br>~~es~~|–––<br>~~RD~~<br>~~DD~~<br>~~GO~~|10<br>~~RD~~<br>~~DD~~<br>~~GO~~|–––<br>~~RD~~<br>~~GO~~<br>~~G~~|nC<br>~~RD~~<br>~~GO~~<br>~~G~~|VDS= 16V, VGS= 0V<br>~~RD~~<br>~~GG~~|
|RG|Gate Resistance<br>~~es~~<br>~~es~~|–––<br>~~DD~~<br>~~es~~<br>~~GO~~|1.0<br>~~DD ~~<br>~~es~~<br>~~GO~~|2.1<br> ~~GO~~<br>~~es~~<br>~~G~~|Ω<br>~~GO~~<br>~~es~~<br>~~G~~|~~es~~<br>~~GG~~|
|td(on)|Turn-On DelayTime<br>~~es~~|–––<br>~~GO~~|11<br>~~GO~~|–––<br>~~G~~|ns<br>~~G~~|VDD= 15V, VGS= 4.5V<br>ID= 12A<br>Clamped Inductive Load<br>~~GG~~<br>©|
|tr|Rise Time<br>~~es~~<br>~~es~~|–––<br>~~GO~~<br>~~es~~|10<br>~~GO ~~<br>~~es~~|–––<br> ~~G~~<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~es~~|14<br>~~es~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~es~~|–––<br>~~es~~|3.7<br>~~es~~|–––<br>~~es~~|||
|Ciss|Input Capacitance<br>~~es~~|–––<br>~~es~~|2080<br>~~es~~|–––<br>~~es~~|pF|ƒ= 1.0MHz<br>VGS= 0V<br>VDS= 15V|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~es~~|480<br>~~es~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es~~|220<br>~~es~~|–––<br>~~es~~|||



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1000<br>Von TIT TTTm<br>toy CN<br>100<br>s7ev_22) |TTT| ET<br>aev AHE<br>sottom 25v PLESTT tiie LTH<br>n | =="<br>10 O D aoe cima ll<br>|YprniZJf7/ Ail WV | IAA|<br>1 aAeO mey Elraeeoe on aa 2.5V  ——|aoe<br>HRT<br>20µs PULSE WIDTH<br>Tj = 25°C<br>0.1 EAT l<br>0.01 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>——eees es<br>rs es ee<br>100 ee<br>TJ = 150°C | = > Ain<br>i a<br>10 7 f/| | {| |<br>eee eEeEE EEE<br>| f TJ = 25°C ee ee<br>fy, VDS = 15V<br>i te<br>20µs PULSE WIDTH<br>1<br>2.5 3.0 3.5 4.0 4.5<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>)(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000 Veo SES<br>voy FHI EH<br>S75vsay HEATTT THM TTITHIN<br>100 re aee<br>Bottom 25v HAs<br>EH| —|_ 4474 tH}<br>10<br>Ye<br>a;|TAA| GGAtraiZaneeele 2.5V ceta eeee<br>| VA ZAHN A EH<br>20µs PULSE WIDTH<br>V/V Tj = 150°C ll<br>1<br>0.01 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>2.0<br>ID = 16A<br>VGS = 10V<br>1.5<br>~ |<br>A<br>1.0 a<br>|<br>— |<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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10000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>C  = C<br>rss   gd<br>Coss  = Cds + Cgd<br>eo Ciss<br>1000<br>S M<br>Coss<br>Crss<br>e t = enilll<br>L E EL<br>100<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs.<br>Drain-to-Source Voltage<br>1000.0<br>100.0<br>TJ = 150°C<br>10.0<br>1.0 TJ = 25°C<br>VGS = 0V<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, Source-toDrain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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12<br>ID= 12A VDS= 24V<br>10 VDS= 15V<br>8 YY<br>6<br>4<br>2<br>a<br>0 AP<br>0 10 20 30 40<br> QG  Total Gate Charge (nC)<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br>1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>100µsec<br>10<br>1msec<br>1<br>10msec<br>Tc = 25°C<br>Tj = 150°C<br>Single Pulse<br>0.1<br>1.0 10.0 100.0<br>VDS  , Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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16 2.2<br>2.0<br>12 TAT) « =A<br>1.8<br>ID = 250µA<br>8 1.6<br>oN P it} N oa<br>1.4<br>4 TTTTN) § =HEEHARNEE<br>1.2<br>0 1.0<br>CN = EF L [EELLELIN] EES<br>25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150<br>TJ , Junction Temperature (°C) TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Threshold Voltage Vs. Temperature<br>Case Temperature<br>100<br>D = 0.50<br>10 0.20<br>0.10<br>0.05<br>1 0.02<br>0.1 0.01 τJ τJτ1τ1 R1 R1 τ2 τR22 R2 Rτ33 R τ3 3 τR4τ4R4 4 τCτ Ri (°C/W)   1.081         0.00043712.880       0.21342824.191       2.335 τi (sec)<br>Ci= τi/Ri 11.862       52<br>Ci i/Ri<br>0.01 SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthja + Tc<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>ID  , Drain Current (A)<br>VGS(th) Gate threshold Voltage (V)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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0.030.02 1<br>0.01 \ TJ = 125°C<br>T = 25°C<br>J<br>OPE RA<br>0.00<br>2.0 4.0 6.0 8.0 10.0<br>VGS, Gate-to-Source Voltage (V)<br>)Ω<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 12.** On-Resistance Vs. Gate Voltage 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>. - [V][DD]<br>IAS<br>20VVGS<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 13a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>tp<br><— ad<br>Co<br>IAS<br>**----- End of picture text -----**<br>


**Fig 13b.** Unclamped Inductive Waveforms 

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300<br>                 I D<br>TOP         6.0A<br>250<br>               6.9A<br>BOTTOM   12A<br>200 EE<br>\ |<br>150 \ i | | |<br>|<br>100<br>50<br>E SSE<br>| ee<br>0<br>25 50 75 100 125 150<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 13c.** Maximum Avalanche Energy Vs. Drain Current 

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LD<br>VDS<br>Cd<br>+<br>VDD -<br>(ht<br>D.U.T<br>VGS<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br>Fig 14a.   Switching Time Test Circuit<br>V<br>DS<br>90%<br>YM<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 14a.** Switching Time Test Circuit 

**Fig 14b.** Switching Time Waveforms 

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Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period ——— — D = —— Period<br>Circuit Layout Considerations V | GS=10V<br>   •<br>(4) [©)] ) t<br>•<br>| =] - LowGround StrayPla I n eductance<br>•   Low Leakage Inductance a) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [l] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 _ VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( 4 •   dv/dt controlled by Rg Vop - Inductor Curent<br>•<br>D.U.T. - Device Under Test SOO |<br>Isp controlled by Duty Factor "D" @ Ripple  ≤ 5% ISD<br>* Vg = 5V for Logic Level Devices<br>Fig 15.  Peak Diode Recovery dv/dt Test Circuit or N-Channel<br>HEXFET ® Power MOSFETs<br>Id<br>ee SameCurrentTypeRegulatoras D.U.T. I Vds u1<br>|<br>I fi Vgs<br>50KΩ |<br>12V .2µF || 1<br>.3µF | '<br>to + {<br>D.U.T. -VDS 1t<br>VGS > Vgs(th) H\' \\1<br>3mA ro I !<br>W\- IG ID L atepinging<br>Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 16.** Gate Charge Test Circuit 

**Fig 17.** Gate Charge Waveform 

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## **Power MOSFET Selection for Non-Isolated DC/DC Converters** 

## **Control FET** 

## **Synchronous FET** 

The power loss equation for Q2 is approximated by; 

**==> picture [185 x 15] intentionally omitted <==**

This can be expanded and approximated by; 

**==> picture [207 x 109] intentionally omitted <==**

**==> picture [187 x 102] intentionally omitted <==**

*dissipated primarily in Q1. 

For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant.  Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. 

The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of  Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Q /Q must be minimized to reduce the gd gs1 potential for Cdv/dt turn on. 

Figure A:  Qoss Characteristic 

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## **SO-8 Package Outline** 

Dimensions are shown in millimeters (inches) 

## **SO-8 Part Marking** 

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## **SO-8 Tape and Reel** 

Dimensions are shown in millimeters (inches) 

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TERMINAL NUMBER 1<br>ooo ©<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) i FEED DIRECTION<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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 330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.94mH RG = 25Ω, IAS = 12A. Pulse width ≤ 400µs; duty cycle ≤ 2%. 

When mounted on 1 inch square copper board 

θ 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 06/05 

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