# Power MOSFET, N Channel, 30 V, 13 A, 0.0092 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2781121RL/)

**URL**: https://novapart.co/products/IRF7805TRPBF/power-mosfet-n-channel-30-v-13-a-00092-ohm-soic
**SKU**: IRF7805TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9130
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Channel Type | N Channel |
| Power Dissipation | 2.5W |
| Drain Source On State Resistance | 0.0092ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781121RL/)

IRF7805PbF ~~—~~ 

## ~~infineon~~ 

**HEXFET[® ] Chip-Set for DC-DC Converters** 

- N Channel Application Specific MOSFETs 

- Ideal for Mobile DC-DC Converters 

- Low Conduction Losses 

- Low Switching Losses 

- Lead-Free 

**==> picture [179 x 73] intentionally omitted <==**

**----- Start of picture text -----**<br>
A<br>S 1 8 DA<br>S 2 7 D<br>S 3 6 D<br>G 4 5 D<br>SO-8<br>Top View IRF7805PbF<br>**----- End of picture text -----**<br>


## **Description** 

Devices Features 

|**Description**||Devices Features||
|---|---|---|---|
|This new device employs advanced HEXFET Power<br>MOSFET technology to achieve an unprecedented<br>balance of on-resistance and gate charge. The reduced<br>conduction and switching losses make this device ideal<br>for high efficiency DC-DC Converters that power the<br>latest generation of mobile microprocessors.<br>The IRF7805PbF offers maximum efficiency for mobile<br>CPU core DC-DC converters.||**VDSS**<br>**30V**<br>**RDS(on)**<br>**11m**<br>**QOSS**<br>**36nC**<br>**Qg**<br>**31nC**<br>**QSW**<br>**11.5nC**<br>**IRF7805PbF**<br>~~=~~|~~=~~|
|||~~=~~|~~=~~|
||**G**<br>**D**<br>**S**<br>Gate<br>Drain<br>Source<br>~~a~~|||



|**Symbol**|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-Source Voltage|30|V|
|VGS|Gate-to-Source Voltage|± 12||
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V|13|A|
|ID @TA= 70°C|Continuous Drain Current,VGS @10V|10||
|IDM|Pulsed Drain Current|100||
|PD@TA= 25°C|Maximum Power Dissipation|2.5|W|
|PD@TA= 70°C|Maximum Power Dissipation|1.6||
||Linear Derating Factor|0.02|W/°C|
|TJ<br>TSTG|Operating Junction and<br>StorageTemperatureRange|-55  to + 150|°C|



|**Thermal Resistance**||||||
|---|---|---|---|---|---|
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>°C/W<br>RJL<br>Junction-to-Drain Lead<br>–––<br>20<br>RJA<br>Junction-to-Ambient<br>–––<br>50<br>~~Be~~||||||
|1||||2016-8-23|2016-8-23|



IRF7805PbF ~~[7~~ 

**Static @ TJ = 25°C (unless otherwise specified)** 

|Qg<br>~~es~~<br>~~es~~|Total Gate Charge<br>~~ee~~|–––<br>~~ee~~|22<br>~~ee~~|31<br>~~ee~~|nC|VGS= 5.0V<br>VDS= 16V<br>ID= 7.0A|
|---|---|---|---|---|---|---|
|g<br>Qgs1<br>~~es~~<br>~~es~~|Pre -Vth Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~|3.7<br>~~ee~~|–––<br>~~ee~~|||
|Qgs2<br>~~es~~<br>~~a ~~<br>~~es~~|Post-Vth Gate-to-Source Charge<br> ~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|1.4<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|||
|gs2<br>Qgd<br>~~es~~<br>~~es~~|Gate-to-Drain Charge<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|6.8<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|||
|gd<br>Qsw<br>~~es~~<br>~~es~~<br>~~es~~|Switch Charge (Qgs2+Qgd)<br>~~ee~~<br>~~ee~~<br>~~DQ~~|–––<br>~~ee~~<br>~~ee~~<br>~~DQ~~|8.2<br>~~ee~~<br>~~ee~~<br>~~DQ~~|11.5<br>~~ee~~<br>~~ee~~|||
|Qoss<br>~~es~~<br>~~es~~<br>~~es~~|Output Charge<br>~~ee~~<br>~~DQ~~<br>~~GQ~~|–––<br>~~ee~~<br>~~DQ~~<br>~~GQ~~|30<br>~~ee~~<br>~~DQ~~<br>~~GQ~~|36<br>~~ee~~<br>~~GQ~~|nC V<br>~~GQ~~|nC VDS =16V, VGS =0V<br>~~GQ~~|
|RG<br>~~es~~<br>~~es~~<br>~~es~~|Gate Resistance<br>~~DQ~~<br>~~GQ~~<br>~~ee~~|0.5<br>~~DQ~~<br>~~GQ~~<br>~~ee~~|–––<br>~~DQ~~<br>~~GQ~~<br>~~ee~~|1.7<br>~~GQ~~<br>~~ee~~|<br>~~GQ~~|~~GQ~~|
|td(on)<br>~~es~~<br>~~es~~<br>~~es~~|Turn-On Delay Time<br>~~GQ~~<br>~~ee~~<br>~~ee~~|–––<br>~~GQ~~<br>~~ee~~<br>~~ee~~|16<br>~~GQ~~<br>~~ee~~<br>~~ee~~|–––<br>~~GQ~~<br>~~ee~~<br>~~ee~~|ns<br>~~GQ~~|VDD= 16V,VGS= 4.5V<br>ID= 7.0A<br>RG= 2<br>ResistiveLoad<br>~~GQ~~|
|d(on)<br>tr<br>~~es~~<br>~~es~~<br>~~es~~|RiseTime<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|20<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|||
|td(off)<br>~~es~~<br>~~es~~<br>~~es~~|Turn-Off DelayTime<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|38<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|||
|d(off)<br>tf<br>~~es~~<br>~~es~~|Fall Time<br>~~ee~~|–––<br>~~ee~~|16<br>~~ee~~|–––<br>~~ee~~|||
|**Diode Characteristics**<br>~~es~~<br>~~es~~<br>~~rsIsts~~|||||||
|~~es~~<br>~~ee~~|**Parameter **<br>~~rs~~<br>~~ee~~|**Min.**<br>~~Is~~<br>~~ee~~|**Typ. M**<br>~~ts~~<br>~~ee~~|**. Max.**<br>~~ee~~|**Units**<br>~~ee~~|**Conditions**<br>~~ee~~|
|IS<br>~~es~~<br>~~ee~~|Continuous Source Current<br>(Body Diode)<br>~~rs ~~<br>~~ee~~|–––<br> ~~Is ~~<br>~~ee~~|–––<br> ~~ts~~<br>~~ee~~|2.5<br>~~ee~~|A<br>~~ee~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>~~ee~~|
|ISM<br>~~ee~~<br>~~es~~|Pulsed Source Current<br>(Body Diode)<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~rs~~|–––<br>~~ee~~<br>~~QU~~|106<br>~~ee~~|||
|VSD<br>~~ee~~<br>~~es~~|Diode Forward Voltage<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~rs~~|–––<br>~~ee~~<br>~~QU~~|1.2<br>~~ee~~|V<br>~~ee~~|TJ =25°C,IS=7.0A,VGS =0V<br>~~ee~~|
|Qrr<br>~~es~~|Reverse Recovery Charge<br>~~ee~~|–––<br>~~rs~~|88<br>~~QU~~|–––|nC|di/dt = 700A/µs<br>VDS=16V, VGS= 0V, IS= 7.0A|
|Qrr|Reverse Recovery Charge|–––|55|–––||di/dt = 700A/µs (with 10BQ040)<br>VDS=16V, VGS= 0V, IS= 7.0A|



## **Notes:** 

-  Repetitive rating;  pulse width limited by max. junction temperature. 

-  Pulse width 300µs; duty cycle  2%. 

-  When mounted on 1" in square copper board, t < 10 sec. 

-  Typ = measured - QOSS 

-  R is measured at TJ of approximately 90°C. 

-  Devices are 100% tested to these parameters. 

2 

2016-8-23 

IRF7805PbF 

**Fig. 1** Normalized On-Resistance vs. Temperature 

**Fig. 2** Typical Gate Charge vs. Gate-to-Source Voltage 

**==> picture [227 x 209] intentionally omitted <==**

**----- Start of picture text -----**<br>
 10 Saeepf ff— —|<br>—— ° aaa ee<br>T  = 150  C J<br>An |<br>Ry-| fY | |<br>a<br> 1<br>|{-—-—J<br>VAT<br>Sas ===<br>°<br>Fa T  = 25  CJ<br>et—_ Ft|<br>CEEoan—J |_|-_ | | |<br>Ziyennee V      = 0 V GS<br>0.1<br>0.4 0.5 0.6 0.7 0.8 0.9<br>V     ,Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig.** 3 Typical Rds(on) vs. Gate-to-Source Voltage 

**Fig. 4** Typical Source-Drain Diode Forward Voltage 

**Fig 5.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

3 

2016-8-23 

IRF7805PbF 

## **SO-8 Package Outline** (Dimensions are shown in millimeters (inches) 

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**----- Start of picture text -----**<br>
INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>L n => _<br>A 5 | a A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>Ft] b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>E 6 H |a D |_| .189 .1968 |tT 4.80 5.00<br>1 2 3 4 0.25 [.010]  A a E .1497 .1574 + 3.80 4.00<br>e .050  BASIC 1.27  BASIC<br>’ | [{|]<br>e 1 .025  BASIC 0.635  BASIC<br>t _ _ |eeee H .2284  ee .2440 5.80 -—— 6.20<br>6X e J oi eee K .0099 .0196 0.25 0.50<br>L .016 .050 0.40 1.27<br>Sa A en<br>y  0°  8°  0°  8°<br>| ft. TS<br>e1 K x 45°<br>A<br>A C<br>y<br>S IR E<br>0.10 [.004]<br>8X b A1 8X L 8X c<br>0.25 [.010]  C A B 7<br>**----- End of picture text -----**<br>


**==> picture [385 x 86] intentionally omitted <==**

**----- Start of picture text -----**<br>
N O T E S : F O O T P R I N T<br>1 .   D I M E N S I O N I N G  &  T O L E R A N C I N G  P E R  A S M E  Y 1 4 . 5 M - 1 9 9 4 . 8 X  0 . 7 2  [ . 0 2 8 ]<br>2 .   C O N T R O L L I N G  D I M E N S I O N :  M I L L I M E T E R<br>3 .   D I M E N S I O N S  A R E  S H O W N  I N  M I L L I M E T E R S  [ I N C H E S ] .<br>4 .   O U T L I N E  C O N F O R M S  T O  J E D E C  O U T L I N E  M S - 0 1 2 A A .<br>5    D I M E N S I O N  D O E S  N O T  I N C L U D E  M O L D  P R O T R U S I O N S .<br>     M O L D  P R O T R U S I O N S  N O T  T O  E X C E E D  0 . 1 5  [ . 0 0 6 ] . 6 . 4 6  [ . 2 5 5 ]<br>6    D I M E N S I O N  D O E S  N O T  I N C L U D E  M O L D  P R O T R U S I O N S .<br>     M O L D  P R O T R U S I O N S  N O T  T O  E X C E E D  0 . 2 5  [ . 0 1 0 ] .<br>7    D I M E N S I O N  I S  T H E  L E N G T H  O F  L E A D  F O R  S O L D E R I N G  T O<br>     A  S U B S T R A T E .<br>3 X  1 . 2 7  [ . 0 5 0 ] 8 X  1 . 7 8  [ . 0 7 0 ]<br>**----- End of picture text -----**<br>


## **SO-8 Part Marking Information** 

E X A M P L E : TH IS  IS  A N  IR F 7 1 0 1  (M O S F E T) 

D A T E  C O D E  (YW W ) 

P  = D E S IG N A TE S  L E A D -F R E E P R O D U C T (O P TIO N A L ) Y = L A S T D IG IT O F  TH E  YE A R X X X X W W  = W E E K IN TE R N A TIO N A L F 7 1 0 1 A  = A S S E M B L Y S ITE  C O D E ~~“fo~~ r R E C TIF IE R L O T C O D E L O G O P A R T N U M B E R 

2016-8-23 

4 

~~Cinfineon~~ 

IRF7805PbF ~~LL~~ 

**SO-8 Tape and Reel** (Dimensions are shown in millimeters (inches) 

## TERMINAL NUMBER 1 

**==> picture [309 x 115] intentionally omitted <==**

**----- Start of picture text -----**<br>
12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

**==> picture [274 x 120] intentionally omitted <==**

**----- Start of picture text -----**<br>
 330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

2016-8-23 

5 

~~Cinfineon~~ 

IRF7805PbF ~~LL~~ 

## **Qualification Information Qualification Level** Consumer MSL1 **Moisture Sensitivity Level** SO-8 (per JEDEC J-STD-020D)[†] **RoHS Compliant** Yes ~~fr~~ † Applicable version of JEDEC standard at the time of product release. **Revision History** 

|**Date**|**Comments**|
|---|---|
|08/23/2016|<br>Changed datasheet with Infineon logo - all pages.<br><br>Corrected typo Qoss from typ/max “3.0nC/3.6nC” to “30nC/36nC” on page 2.<br><br>Added disclaimer on lastpage.|



## **Trademarks of Infineon Technologies AG** 

µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ 

Trademarks updated November 2015 

## **Other Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

## **IMPORTANT NOTICE** 

**Edition 2016-04-19** The information given in this document shall in no **Published by** event be regarded as a guarantee of conditions or **Infineon Technologies AG characteristics  (“Beschaffenheitsgarantie”) . 81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information **© 2016 Infineon Technologies AG.** regarding the application of the product, Infineon **All Rights Reserved.** Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement **Do you have a question about this** of intellectual property rights of any third party. **document? Email:** erratum@infineon.com In addition, any information given in this document **is subject to customer’s compliance with its** obligations stated in this document and any applicable legal requirements, norms and **Document reference** standards concerning customer’s products and **ifx1** any use of the product of Infineon Technologies in **customer’s applications.** The data contained in this document is exclusively intended for technically trained staff. It is the **responsibility of customer’s technical departments** to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, **Infineon Technologies’ products may** not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

6 

2016-8-23 



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---

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