# Power MOSFET, N Channel, 150 V, 67 A, 0.011 ohm, DirectFET L8, Surface Mount

![Product image](https://novapart.co/image/farnell:2579995/)

**URL**: https://novapart.co/products/IRF7779L2TRPBF/power-mosfet-n-channel-150-v-67-a-0011-ohm
**SKU**: IRF7779L2TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.5100
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:67A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 15Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 125W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DirectFET L8 |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 67A |
| Drain Source On State Resistance | 0.011ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2579995/)

## Typicalypical values ees ees otherwise species species DirectFET values ees ees otherwise species species Power MOSFET otherwise species species 

**==> picture [509 x 679] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|DirectFET|Power MOSFET|
|RoHS Compliant, Halogen Free|
|:|Lead-Free (Qualified up to 260°C Reflow)|°|Typicalypical values ees ees otherwise species species|
|Ideal for High Performance Isolated Converter|VDSS|VGS|RDS(on)|
|Primary Switch Socket|
|150V min|±20V max|9.0m|Ω|@ 10V|
|Optimized for Synchronous Rectification|
|Low Conduction Losses|Qg  tot|Qgd|Vgs(th)|
|High Cdv/dt Immunity|97nC|33nC|4.0V|
|Low Profile (<0.7mm)|
|Dual Sided Cooling Compatible|S|S|
|.|©|f|ee|»|Ii|>.|
|Compatible with existing Surface Mount Techniques Industrial Qualified|D|G|SSS|SSS|D|
|&|5|
|:|»|[|FH|]|
|DirectFET|.|ISOMETRIC|
|Applicable DirectFET Outline and  Substrate Outline|,|=|
|SB|SC|M2|M4|L4|L6|L8|
|LT|COUT|CT|CT|CT|te|Ee|
|Description|
|The IRF7779L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET|[TM]|packaging to|
|achieve the lowest on-state resistance in a package that has a footprint smaller than a D|[2]|PAK|and only 0.7 mm profile.  The DirectFET package is|
|compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering|
|techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual|
|sided cooling to maximize thermal transfer in power systems.|
|The IRF7779L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in|
|the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability|
|improvements, and makes this device ideal for high performance power converters.|
|Standard Pack|
|Orderable part number|Package Type|Note|
|Form|Quantity|
|IRF7779L2TRPbF|DirectFET2 Large Can|Tape and Reel|4000|"TR" suffix|
|ee|IRF7779L2TR1PbF|DirectFET2 Large Can|Tape and Reel|||1000|ee|"TR1" suffix|EOL notice # 264|iF|
|Absolute Maximum Ratings|
|Parameter|Max.|Units|
|V|DS|Drain-to-Source Voltage|150|V|
|a|V|GS|Gate-to-Source Voltage|±20|
|I|D|@ T|C|= 25°C|Continuous Drain Current, V|GS|@ 10V (Silicon Limited)|67|
|I|D|@ T|C|= 100°C|Continuous Drain Current, V|GS|@ 10V (Silicon Limited)|47|A|
|I|D|@ T|A|= 25°C|Continuous Drain Current, V|GS|@ 10V (Silicon Limited)|11|
|ee|I|D|@ T|C|= 25°C|Continuous Drain Current, V|GS|@ 10V (Package Limited)|375|
|————————|I|DM|Pulsed Drain Current|270|ee|
|Ee|E|AS|Single Pulse Avalanche Energy|270|mJ|
|a|I|AR|Avalanche Current|40|A|
|50.00|20.00|
|ID = 40A|TC= 25°C|
|40.00|
|are|16.00|VGS = 7.0V||||,|
|30.00|
|iti|VGS = 8.0V|—|WA|
|20.00|TJ = 125°C|VVGS GS = 10V= 15V|
|12.00|
|10.00|ScsenE|ea|
|Cert|TJ = 25°C|a|
|0.00|
|HCeSE=|8.00|oh|
|4.0|6.0|8.0|10.0|12.0|14.0|16.0|
|50|70|90|110|
|VGS, Gate-to-Source Voltage (V)|
|ID, Drain Current (A)|
|Fig 1.|Typical On-Resistance vs. Gate Voltage|
|Fig 2.|Typical On-Resistance vs. Drain Current|
|.|Click on this section to link to the appropriate technical paper.|5|TC measured with thermocouple mounted to top (Drain) of part.C measured with thermocouple mounted to top (Drain) of part. measured with thermocouple mounted to top (Drain) of part.|
|@|Click on this section to link to the DirectFET Website.|©|Repetitive rating;  pulse width limited by max. junction temperature.|
|©|Surface mounted on 1 in. square Cu board, steady state.|©|Starting TJ = 25°C, L = 0.33mH, RG = 25|Ω|, IAS = 40A.|

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~~.~~ Click on this section to link to the appropriate technical paper. 5 TC measured with thermocouple mounted to top (Drain) of part.C measured with thermocouple mounted to top (Drain) of part. measured with thermocouple mounted to top (Drain) of part. 

Click on this section to link to the appropriate technical paper. @ Click on this section to link to the DirectFET Website. © © Surface mounted on 1 in. square Cu board, steady state. © 

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**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage|150|–––|–––|V|VGS= 0V, ID= 250μA|
|ΔΒVDSS/ΔTJ|Breakdown Voltage Temp. Coefficient|–––|0.13|–––|V/°C|Reference to 25°C, ID= 2mA|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|9.0|11|mΩ|VGS= 10V, ID= 40A�|
|VGS(th)|Gate Threshold Voltage|3.0|4.0|5.0|V|VDS= VGS, ID= 250μA|
|ΔVGS(th)/ΔTJ|Gate Threshold Voltage Coefficient|–––|-15|–––|mV/°C||
|IDSS|Drain-to-Source Leakage Current|–––|–––|20|μA|VDS= 150V, VGS= 0V|
|||–––|–––|250||VDS= 120V, VGS= 0V, TJ= 125°C|
|IGSS|Gate-to-Source Forward Leakage|–––|–––|100|nA|VGS= 20V|
||Gate-to-Source Reverse Leakage|–––|–––|-100||VGS= -20V|
|gfs|Forward Transconductance|83|–––|–––|S|VDS= 50V, ID= 40A|
|Qg|Total Gate Charge|–––|97|150|nC|See Fig. 9<br>ID= 40A<br>VGS= 10V<br>VDS= 75V|
|Qgs1|Pre-Vth Gate-to-Source Charge|–––|27|–––|||
|Qgs2|Post-Vth Gate-to-Source Charge|–––|6.9|–––|||
|Qgd|Gate-to-Drain Charge|–––|33|50|||
|Qgodr|Gate Charge Overdrive|–––|30|–––|||
|Qsw|Switch Charge(Qgs2+ Qgd)|–––|40|–––|||
|Qoss|Output Charge|–––|39|–––|nC|VDS= 16V, VGS= 0V|
|RG|Gate Resistance|–––|1.5|–––|Ω||
|td(on)|Turn-On DelayTime|–––|16|–––|ns|VDD= 75V, VGS= 10V��<br>ID= 40A<br>RG=1.8Ω|
|tr|Rise Time|–––|19|–––|||
|td(off)|Turn-Off DelayTime|–––|36|–––|||
|tf|Fall Time|–––|12|–––|||
|Ciss|Input Capacitance|–––|6660|–––|pF|VGS= 0V<br>ƒ= 1.0MHz<br>VDS= 25V|
|Coss|Output Capacitance|–––|840|–––|||
|Crss|Reverse Transfer Capacitance|–––|180|–––|||
|Coss|Output Capacitance|–––|5620|–––||VGS= 0V, VDS= 1.0V, f=1.0MHz|
|Coss|Output Capacitance|–––|400|–––||VGS= 0V, VDS= 120V, f=1.0MHz|



## **Diode Characteristics** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS|Continuous Source Current<br>(BodyDiode)|–––|–––|67|A|showing  the<br>integral reverse<br>p-njunction diode.<br>MOSFET symbol|
|ISM|Pulsed Source Current<br>(BodyDiode)��|–––|–––|270|||
|VSD|Diode Forward Voltage|–––|–––|1.3|V|TJ= 25°C, IS= 40A, VGS= 0V�|
|trr|Reverse RecoveryTime|–––|110|170|ns|TJ= 25°C, IF= 40A, VDD= 75V<br>di/dt = 100A/μs�|
|Qrr|Reverse RecoveryCharge|–––|510|770|nC||



## **������** 

> � Repetitive rating;  pulse width limited by max. junction temperature. 

> � Pulse width ≤ 400μs; duty cycle ≤ 2%. 

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## **Absolute Maximum Ratings** 

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Parameter Max. Units<br>PD @TC = 25°C SO Power Dissipation  125 W<br>PD @TC = 100°C SO Power Dissipation  63<br>PD @TA = 25°C Power Dissipation  3.3<br>a<br>TP  Peak Soldering Temperature 270 °C<br>TJ  Operating Junction and -55  to + 175<br>TSTG i Storage Temperature Range<br>Thermal Resistance<br>Parameter Typ. Max. Units<br>R θ JA  On Junction-to-Ambient  ––– 45<br>R θ JA  © Junction-to-Ambient   12.5 –––<br>R θ JA  © Junction-to-Ambient   20 ––– °C/W<br>R θ J-Can 0 Junction-to-Can  ––– 1.2<br>R θ J-PCB  PH Junction-to-PCB Mounted ––– 0.5<br>10<br>aee ee ee eee<br>1 ct<br>D = 0.50<br>_——— 0.20 aLL a nete<br>0.1 Rt 0.10 eer<br>0.05<br>0.01 Sa—ae 0.01 0.02 ee en or 2 τ J τ | J τ 1 τ ee 1 R1R1 τ 2 τ R 2 2R2 R τ 33R τ 3 3 τ R4 τ 4R4 4 τ C τ Ri 0.1080         0.0001710.6140         0.0539140.4520         0.006099(°C/W)  τ i (sec)<br>TO Ci=  Ci τ i / Ri i / Ri | 1.47e-05      0.036168<br>0.001 wa SINGLE PULSE EE ee eerie Notes: eeeeee<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>ae ee a ee ee ee ee 2. Peak Tj = P dm x Zthjc + Tc a<br>0.0001 Ft TTT rE EET EE EET EET il<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 3.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

> Surface mounted on 1 in. square Cu board, steady state. @ Mounted on minimum footprint full size board with metalized TC measured with thermocouple incontact with top (Drain) of part. back and with small clip heatsink. Used double sided cooling, mounting pad with large heatsink. () R θ is measured at TJ of approximately 90°C. 

® Surface mounted on 1 in. square Cu board  (still air). 

(0) Mounted on minimum footprint full size board with metalized back and with small clip heatsink. (still air) 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.5V<br>7.0V rite7 ll<br>100 6.5V 6.0V Asm Ih<br>BOTTOM 5.5V<br>HH<br>LA |_| _| | |<br>10<br>≤  60μs PULSE WIDTH<br>Tj = 25°C<br>5.5V<br>Sieur,pe Lo<br>tin Mth<br>1 EE<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 4.   Typical Output Characteristics<br>1000<br>VDS = 50V<br>=<br>≤  60μs PULSE WIDTH<br>100 AZ|<br>Ee ee ee ee 4 ee) Ay 42 ee ee<br>a ee ee ee T = 175°C<br>J<br>10 T = 25°C<br>J<br>T = -40°C<br>J<br>1 PZT TAL<br>i A | | ee<br>0.1<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5<br>VGS, Gate-to-Source Voltage (V)<br>Fig 6.   Typical Transfer Characteristics<br>100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>==<br>Crss   = Cgd<br>= C oss   = C ds  + C gd<br>10000<br>Rs Ciss e esreein<br>e tH<br>PINCHESNOE EEE<br>Coss<br>1000 Ney<br>Crss<br>PCP SEU<br>100 P| HNALT<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 8.** Typical Capacitance vs.Drain-to-Source Voltage 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.5V FICCI<br>7.0V HY}<br>6.5V<br>6.0V all<br>BOTTOM 5.5V<br>Att II<br>100<br>TTeeeee eae<br>5.5V<br>Haga V ≤  60μs PULSE WIDTH hn<br>A Tj = 175°C<br>10 WO Alleen<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Output Characteristics 

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3.0<br>I D  = 40A TTL<br>VGS = 10V<br>2.5<br>fyictey<br>2.0 Z|<br>1.5<br>B<br>1.0<br>XK<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>Fig 7.   Normalized On-Resistance vs. Temperature<br>14<br>ID= 40A<br>12 aa VDS= 120V [4<br>VDS= 75V<br>an Se<br>10 V DS = 30V<br>8 | ) YVien<br>64 |PY1LA| | || |fl|<br>2<br>0 ZV) Pt)<br>0 20 40 60 80 100 120 140<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 7.** Normalized On-Resistance vs. Temperature 

**Fig 9.** Typical  Total Gate Charge vs Gate-to-Source Voltage 

**==> picture [210 x 199] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>TJ = 175°C<br>100 TJ = 25°C<br>TJ = -40°C<br>10<br>1<br>VGS = 0V<br>0.1<br>0.2 0.4 0.6 0.8 1.0<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 10.** Typical Source-Drain Diode Forward Voltage 

**==> picture [214 x 197] intentionally omitted <==**

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70<br>60<br>St<br>50 N<br>40 ELLEN EEE<br>30<br>20 PEELE EEA<br>PEELE<br>10<br>PEELE  EEL ELEN LEN<br>0<br>25 50 75 100 125 150 175<br>TC , CaseTemperature (°C)<br>ID  , Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 12.** Maximum Drain Current vs. Case Temperature 

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**----- Start of picture text -----**<br>
1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>100μsec<br>10 1msec<br>10 m sec<br>1 DC<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>0.1<br>0 1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>Fig11.   Maximum Safe Operating Area<br>5.5<br>ID = 1.0A<br>5.0 I D  = 1.0mA<br>4.5 I D  = 250μA<br>SR<br>4.0<br>3.5 TTC EASESSS WN<br>3.0<br>2.5<br>NN<br>2.0<br>CECE ELINN<br>1.5<br>COCPEELE}<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 13.** Typical Threshold Voltage vs. Junction Temperature 

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**----- Start of picture text -----**<br>
1200<br>                 I D<br>TOP          7.8A<br>1000<br>                12A<br>BOTTOM   40A<br>800<br>600 PX | ff<br>400 NNER<br>200<br>SSN<br>|OSS<br>0<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Avalanche Energy Vs. Drain Current 

**==> picture [442 x 203] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>Allowed avalanche Current vs avalanche<br>Duty Cycle = Single Pulse<br>Po TE ETN pulsewidth, tav, assuming  Δ Tj = 150°C and  mal<br>Tstart =25°C (Single Pulse)<br>100<br>oe<br>0.01<br>10 Ne<br>0.05<br>,,a —RSHSSE EH<br>0.10<br>1 A<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming ΔΤ j = 25°C and<br>| Tstart = 150°C. a a ee<br>re i Sars<br>eo I<br>0.1 herr eee eee.<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Avalanche Current Vs.Pulsewidth 

**==> picture [213 x 197] intentionally omitted <==**

**----- Start of picture text -----**<br>
280<br>TOP          Single Pulse<br>240 BOTTOM   1% Duty Cycle<br>ID = 40A<br>SOL<br>200 IN x SS<br>NEN EEE<br>160 PN IN ETE<br>120 NL UN<br>80 PEN IUNNE<br>\ON<br>PELL<br>40 EN LING<br>SERRE RNa Pw TEN<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

**Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)** 

1. Avalanche failures assumption: 

- Purely a thermal phenomenon and failure occurs at a 

- temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 19a, 19b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. Δ T = Allowable rise in junction temperature, not to exceed 

- Tjmax (assumed as 25°C in Figure 15, 16). 

- tav = Average time in avalanche. 

- D = Duty cycle in avalanche =  tav ·f 

- ZthJC(D, tav) = Transient thermal resistance, see figure 11) 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·ta** 

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**----- Start of picture text -----**<br>
+<br>) ©)    •  Circuit Layout Considerations<br> •<br>-  •   Low Leakage Inductance<br>+<br>@ - 8 S Current Transformer - ® +<br>•<br>Re •   Driver; same type as D.U.T. V +<br>(4 •   dildt controlled by Rg D D -<br>•<br>**----- End of picture text -----**<br>


**==> picture [224 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. Period<br>{ + , r e oe | f<br>VGS=10V<br>|<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current Current ™=—<br>r di/dt /<br>©) D.U.T. VDS Waveform Diode Recovery<br>dv/dt<br>VDD<br>Re-Applied 4<br>Voltage Body Diode  Forward Drop<br>e s ee<br>Ripple  ≤ 5% ISD<br>® t<br>**----- End of picture text -----**<br>


for N-Channel HEXFET Power MOSFETs 

**Fig 17.** 

**==> picture [451 x 144] intentionally omitted <==**

**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>0<br>S Vgs(th)<br>201 K<br>Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>


**Fig 18a.** Gate Charge Test Circuit 

**Fig 18b.** Gate Charge Waveform 

**==> picture [190 x 122] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>L DRIVER<br>VDS<br>D.U.T +<br>- [V][DD]<br>IAS<br>e 20V dt<br>t 0.01 Ω<br>p<br>**----- End of picture text -----**<br>


**Fig 19a.** Unclamped Inductive Test Circuit 

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**----- Start of picture text -----**<br>
+<br>-<br>≤ 1<br>≤ 0.1 % us<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V(BR)DSS<br>+ tp -><br>/<br>y |i<br>yf<br>/<br>IAS<br>Fig 19b.   Unclamped Inductive Waveforms<br>V90%DS fe<br>x |<br>|<br>10% /\ |<br>/\<br>VGS<br>| | \<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 19b.** Unclamped Inductive Waveforms 

**Fig 20a.** Switching Time Test Circuit 

**Fig 20b.** Switching Time Waveforms 

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations 

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**----- Start of picture text -----**<br>
G = GATE<br>D = DRAIN<br>S = SOURCE<br>D D<br>S S<br>S S<br>D G D<br>S S<br>S S<br>D | D<br>**----- End of picture text -----**<br>


**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations 

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|---|---|---|---|
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|A<br>9.05<br>~~ee ee~~<br>~~eeee~~|9.15<br>~~ee ee ~~<br>~~eeee~~|0.356<br> ~~ee ~~<br>~~ee~~|0.360<br> ~~ee~~<br>~~ee~~|
|B<br>6.85<br>~~eeee~~<br>~~eeee~~|7.10<br>~~eeee~~<br>~~eeee~~|0.270<br>~~ee~~<br>~~ee~~|0.280<br>~~ee~~<br>~~ee~~|
|C<br>5.90<br>~~ee ee~~<br>~~eeee~~<br>~~eeee~~|6.00<br>~~ee ee ~~<br>~~eeee~~<br>~~eeee~~|0.232<br> ~~ee~~<br>~~ee~~<br>~~ee~~|0.236<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|D<br>0.55<br>~~ee ee~~<br>~~eeee~~<br>~~eeee~~|0.65<br>~~ee ee ~~<br>~~eeee~~<br>~~eeee~~|0.022<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|0.026<br> ~~ee~~<br>~~ee~~<br>~~ee~~|
|E<br>0.58<br>~~ee ee~~<br>~~eeee~~<br>~~eeee~~|0.62<br>~~ee ee ~~<br>~~eeee~~<br>~~eeee~~|0.023<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|0.024<br> ~~ee~~<br>~~ee~~<br>~~ee~~|
|1.18<br>~~ee ee~~<br>~~eeee~~<br>~~eeee~~|1.22<br>~~ee ee ~~<br>~~eeee~~<br>~~eeee~~|0.046<br> ~~ee~~<br>~~ee~~<br>~~ee~~|0.048<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|G<br>0.98<br>~~ee ee~~<br>~~eeee~~<br>~~eeee~~|1.02<br>~~ee ee ~~<br>~~eeee~~<br>~~eeee~~|0.015<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|0.017<br> ~~ee~~<br>~~ee~~<br>~~ee~~|
|H<br>0.73<br>~~ee ee~~<br>~~eeee~~<br>~~eeee~~|0.77<br>~~ee ee ~~<br>~~eeee~~<br>~~eeee~~|0.029<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|0.030<br> ~~ee~~<br>~~ee~~<br>~~ee~~|
|0.38<br>~~ee ee~~<br>~~eeee~~<br>~~eeee~~|0.42<br>~~ee ee ~~<br>~~eeee~~<br>~~eeee~~|0.015<br> ~~ee~~<br>~~ee~~<br>~~ee~~|0.017<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|K<br>1.34<br>~~ee ee~~<br>~~eeee~~<br>~~eeee~~|1.47<br>~~ee ee ~~<br>~~eeee~~<br>~~eeee~~|0.053<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|0.058<br> ~~ee~~<br>~~ee~~<br>~~ee~~|
|2.52<br>~~ee ee~~<br>~~eeee~~<br>~~eeee~~|2.69<br>~~ee ee ~~<br>~~eeee~~<br>~~eeee~~|0.099<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|0.106<br> ~~ee~~<br>~~ee~~<br>~~ee~~|
|M<br>0.59<br>~~ee ee~~<br>~~eeee~~<br>~~eeee~~|0.70<br>~~ee ee ~~<br>~~eeee~~<br>~~eeee~~|0.023<br> ~~ee~~<br>~~ee~~<br>~~ee~~|0.028<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|N<br>0.03<br>~~ee ee~~<br>~~eeee~~<br>~~eeee~~|0.08<br>~~ee ee ~~<br>~~eeee~~<br>~~eeee~~|0.001<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|0.003<br> ~~ee~~<br>~~ee~~<br>~~ee~~|
|P<br>0.09<br>~~ee ee~~<br>~~eeee~~|0.18<br>~~ee ee ~~<br>~~eeee~~|0.003<br> ~~ee ~~<br>~~ee~~|0.007<br> ~~ee~~<br>~~ee~~|



## DirectFET Part Marking 

## **GATE MARKING** 

## **LOGO** 

## **PART NUMBER** 

## **BATCH NUMBER** 

## **DATE CODE** 

Line above the last character of the date code indicates "Lead-Free" 

**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

## DirectFET ™ Tape & Reel Dimension (Showing component orientation). 

~~dhs~~ NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. (ordered as IRF7779L2PBF). pe **REEL DIMENSIONS** ee STANDARD OPTION **(QTY 4000)** rs METRIC ee eee IMPERIAL ~~ee~~ CODE MIN ~~eeee~~ MAX MIN MAX A 330.0 N.C 12.992 N.C ~~eeee~~ B 20.2 N.C 0.795 N.C ~~eeee~~ C 12.8 13.2 0.504 0.520 ~~ee eeee~~ D 1.5 N.C 0.059 N.C ~~ee eeee~~ E 100.0 N.C 3.937 N.C ~~ee eeee~~ F N.C 22.4 N.C 0.889 ~~ee eeee~~ G 16.4 18.4 0.646 0.724 ~~ee eeee~~ H 15.9 18.4 0.626 0.724 ~~ee~~ ee ~~eee~~ 

**==> picture [149 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
LOADED TAPE FEED DIRECTION<br>**----- End of picture text -----**<br>


|NOTE: CONTROLLING<br>DIMENSIONS IN MM|MIN<br>11.90<br>3.90<br>15.90<br>7.40<br>7.20<br>9.90<br>1.50<br>1.50<br>CODE<br>A<br>B<br>C<br>D<br>E<br>F<br>G<br>H<br>MAX<br>12.10<br>4.10<br>16.30<br>7.60<br>7.40<br>10.10<br>NC<br>1.60<br>MIN<br>0.469<br>0.154<br>0.626<br>0.291<br>0.284<br>0.390<br>0.059<br>0.059<br>MAX<br>0.476<br>0.161<br>0.642<br>0.299<br>0.291<br>0.398<br>NC<br>0.063<br>DIMENSIONS<br>METRIC<br>IMPERIAL<br>~~PO~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~es eeee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee ee ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee ee ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee ee ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|---|---|



**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

## **Qualification Information[†]** 

|**Qualification Information[†]**|||
|---|---|---|
|Qualification level|Industrial††||
||(per JEDEC JESD47F†††guidelines)||
||Comments: This family of products has passed JEDEC’s Industrial<br>qualification. IR’s Consumer qualification level is granted by extension of the<br>higher Industrial level.||
|Moisture Sensitivity Level|DFET2|MSL1<br>(perJEDEC J-STD-020D†††)|
|RoHS Compliant|Yes||



- T http://www.irf.com/product-info/reliability 

- t ~~h~~ o 

- Qualification standards can be found at International Rectifier’s web site 

- Higher qualification ratings may be available should the user have such requirements. 

- Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ 

- ttt Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Date**<br>**Revision History**|**Comments**<br>**Revision History**|
|---|---|
|5/6/2014|•Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option  (EOL notice #264).<br>•Updated data sheet based on corporate template.|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF7779L2TRPBF/power-mosfet-n-channel-150-v-67-a-0011-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf7779l2trpbf/mosfet-n-ch-150v-67a-directfet/dp/2579995)
---

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