# Power MOSFET, N Channel, 100 V, 124 A, 0.0028 ohm, DirectFET L8, Surface Mount

![Product image](https://novapart.co/image/farnell:2725915/)

**URL**: https://novapart.co/products/IRF7769L2TRPBF/power-mosfet-n-channel-100-v-124-a-00028-ohm
**SKU**: IRF7769L2TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €3.0200
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Power Dissipation | 125W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 125W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0028ohm |
| Transistor Case Style | DirectFET L8 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 124A |
| Drain Source On State Resistance | 0.0028ohm |
| Gate Source Threshold Voltage Max | 2.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725915/)

~~e~~ RoHS Compliant, Halogen Free DirectFET Power MOSFET 

- ~~e~~ Lead-Free (Qualified up to 260°C Reflow) Typical values (unless otherwise specified) 

|**VDSS**|**VGS**|**RDS(on)**|
|---|---|---|
|100V min|±20V max|2.8mΩ@ 10V|
|**Qg  tot**|**Qgd**|**Vgs(th)**|
|200nC|110nC|2.7V|



> Ideal for High Performance Isolated Converter **VDSS VGS RDS(on)** Primary Switch Socket 100V min ±20V max 2.8m Ω @ 10V Optimized for Synchronous Rectification Low Conduction Losses **Qg  tot Qgd Vgs(th)** High Cdv/dt Immunity 200nC 110nC 2.7V Low Profile (<0.7mm) ° Dual Sided Cooling Compatible ® **S S** Compatible with existing Surface Mount Techniques **S S** Industrial Qualified **D G S S D S S** DirectFET ™ ISOMETRIC 

> Applicable DirectFET Outline and  Substrate Outline o Le **SB SC M2 M4 L4 L6 L8** A ~~=~~ **Description** 

The IRF7769L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET[TM] packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D[2] PAK and only 0.7 mm profile.  The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. 

The IRF7769L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters. 

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Standard Pack<br>Orderable part number Package Type Note<br>crPo Form Quantity<br>IRF7769L2TRPbF DirectFET2 Large Can Tape and Reel eee 4000 "TR" suffix<br>SS IRF7769L2TR1PbF ee DirectFET2 Large Can ee Tape and Reel 1000 ee "TR1" suffix  EOL notice # 264 eee<br>Absolute Maximum Ratings<br>Parameter Max. Units<br>VDS Drain-to-Source Voltage 100 V<br>VGS $$a Gate-to-Source Voltage ______________}+—_______  ±20 ]<br>ID @ TC = 25°C   Continuous Drain Current, VGS @ 10V (Silicon Limited) 124<br>ID @ TC = 100°C RO Continuous Drain Current, VGS @ 10V (Silicon Limited) 88 A<br>ID @ TA = 25°C a Continuous Drain Current, VGS @ 10V (Silicon Limited) 20<br>ID @ TC = 25°C   PO Continuous Drain Current, VGS @ 10V (Package Limited) 375<br>IDM Pulsed Drain Current  500<br>a<br>EAS a: Single Pulse Avalanche Energy 260 mJ<br>IAR  D Avalanche Current 74 A<br>=————sa<br>12.00 3.10<br>ID = 74A TA= 25°C<br>10.00<br>VGS = 7.0V<br>8.00 A Tr<br>3.00<br>Soa | VGS = 8.0V _<br>6.00<br>A TJ = 125°C eS VGS = 10V<br>4.00 ————— —<br>2.90<br>2.00 VGS = 15V<br>NEE TJ = 25°C ~~<br>0.00<br>Pa} PP<br>2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 2.80<br>20 40 60 80 100<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain Current (A)<br>Fig 1.    Typical On-Resistance vs. Gate Voltage<br>Fig 2.    Typical On-Resistance vs. Drain Current<br>Ω)<br>Typical  RDS(on) (m<br>Ω)<br>Typical  RDS(on),  (m<br>**----- End of picture text -----**<br>


Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. 

TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.09mH, RG = 25 Ω , IAS = 74A. 

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**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage|100|–––|–––|V|VGS= 0V, ID= 250μA|
|ΔΒVDSS/ΔTJ|Breakdown Voltage Temp. Coefficient|–––|0.02|–––|V/°C|Reference to 25°C, ID= 2mA|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|2.8|3.5|mΩ|VGS= 10V, ID= 74A�|
|VGS(th)|Gate Threshold Voltage|2.0|2.7|4.0|V|VDS= VGS, ID= 250μA|
|ΔVGS(th)/ΔTJ|Gate Threshold Voltage Coefficient|–––|-10|–––|mV/°C||
|IDSS|Drain-to-Source Leakage Current|–––|–––|20|μA|VDS= 100V, VGS= 0V|
|||–––|–––|250||VDS= 80V, VGS= 0V, TJ= 125°C|
|IGSS|Gate-to-Source Forward Leakage|–––|–––|100|nA|VGS= 20V|
||Gate-to-Source Reverse Leakage|–––|–––|-100||VGS= -20V|
|gfs|Forward Transconductance|410|–––|–––|S|VDS= 25V, ID= 74A|
|Qg|Total Gate Charge|–––|200|300|nC|See Fig. 9<br>ID= 74A<br>VGS= 10V<br>VDS= 50V|
|Qgs1|Pre-Vth Gate-to-Source Charge|–––|30|–––|||
|Qgs2|Post-Vth Gate-to-Source Charge|–––|9.0|–––|||
|Qgd|Gate-to-Drain Charge|–––|110|165|||
|Qgodr|Gate Charge Overdrive|–––|51|–––|||
|Qsw|Switch Charge(Qgs2+ Qgd)|–––|119|–––|||
|Qoss|Output Charge|–––|53|–––|nC|VDS= 16V, VGS= 0V|
|RG|Gate Resistance|–––|1.5|–––|Ω||
|td(on)|Turn-On DelayTime|–––|44|–––|ns|VDD= 50V, VGS= 10V��<br>ID= 74A<br>RG=1.8Ω|
|tr|Rise Time|–––|32|–––|||
|td(off)|Turn-Off DelayTime|–––|92|–––|||
|tf|Fall Time|–––|41|–––|||
|Ciss|Input Capacitance|–––|11560|–––|pF|VGS= 0V<br>ƒ= 1.0MHz<br>VDS= 25V|
|Coss|Output Capacitance|–––|1240|–––|||
|Crss|Reverse Transfer Capacitance|–––|590|–––|||
|Coss|Output Capacitance|–––|6665|–––||VGS= 0V, VDS= 1.0V, f=1.0MHz|
|Coss|Output Capacitance|–––|690|–––||VGS= 0V, VDS= 80V, f=1.0MHz|
|**Diode Characteristics**|||||||
||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|IS|Continuous Source Current<br>(BodyDiode)|–––|–––|124|A|showing  the<br>integral reverse<br>p-njunction diode.<br>MOSFET symbol|
|ISM|Pulsed Source Current<br>(BodyDiode)��|–––|–––|500|||
|VSD|Diode Forward Voltage|–––|–––|1.3|V|TJ= 25°C, IS= 74A, VGS= 0V�|
|trr|Reverse RecoveryTime|–––|75|112|ns|TJ= 25°C, IF= 74A, VDD= 50V<br>di/dt = 100A/μs�|
|Qrr|Reverse RecoveryCharge|–––|220|330|nC||



|Coss<br>Output Capacitance|Coss<br>Output Capacitance|–––|690|–––||VGS= 0V, VDS= 80V, f=1.0MHz|
|---|---|---|---|---|---|---|
|**Diode Characteristics**|||||||
||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|IS|Continuous Source Current|–––|–––|124||MOSFET symbol|
||(BodyDiode)||||A|showing  the|
|ISM|Pulsed Source Current|–––|–––|500||integral reverse|
||(BodyDiode)��|||||p-njunction diode.|
|VSD|Diode Forward Voltage|–––|–––|1.3|V|TJ= 25°C, IS= 74A, VGS= 0V�|
|trr|Reverse RecoveryTime|–––|75|112|ns|TJ= 25°C, IF= 74A, VDD= 50V|
|Qrr|Reverse RecoveryCharge|–––|220|330|nC|di/dt = 100A/μs�|



## **������** 

> � Repetitive rating;  pulse width limited by max. junction temperature. 

> � Pulse width ≤ 400μs; duty cycle ≤ 2%. 

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## **Absolute Maximum Ratings** 

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Parameter Max. Units<br>PD @TC = 25°C © Power Dissipation  Se 125 W<br>PD @TC = 100°C > Power Dissipation  63<br>PD @TA = 25°C © Power Dissipation  3.3<br>TP  Peak Soldering Temperature 270 °C<br>TJ  Operating Junction and -55  to + 175<br>TSTG ee Storage Temperature Range es<br>Thermal Resistance<br>Parameter Typ. Max. Units<br>R θ JA  Junction-to-Ambient  ––– 45<br>© en<br>R θ JA  Junction-to-Ambient   12.5 –––<br>a<br>R θ JA  Junction-to-Ambient   20 ––– °C/W<br>© en<br>R θ J-Can Junction-to-Can  ––– 1.2<br>©<br>R θ J-PCB  a Junction-to-PCB Mounted ––– 0.5<br>10<br>eeee ee ee eee el<br>1 eeee<br>D = 0.50<br>_———— 0.20 esLLanma | a<br>0.1 an 0.10<br>0.05<br>0.01 =arrr—ee 0.01 0.02 SS a τ J τ J τ 1 τ 1 R1R1 τ 2 τ R 2 2R2 R τ 33R τ | 3 3 τ R4 τ 4R4 4 τ C τ | Ri  — 0.1080         0.0001710.6140         0.0539140.4520         0.006099(°C/W | )  τ i  | (sec) &<br>Ee a eee ieee ee Ci=  Ci τ i / Ri i / Ri | 1.47e-05      0.036168<br>0.001 wa SINGLE PULSE yy ene<br>Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>0.0001 aFete eeEteee ee eeth ee el 2. Peak Tj = P dm x Zthjc + Tc ail<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 3.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple incontact with top (Drain) of part. Used double sided cooling, mounting pad with large heatsink. 

Mounted on minimum footprint full size board with metalized back and with small clip heatsink. R θ is measured at TJ of approximately 90°C. 

® Surface mounted on 1 in. square Cu board  (still air). 

(©) Mounted on minimum footprint full size board with metalized back and with small clip heatsink. (still air) 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>6.0V<br>100 5.0V<br>4.5V<br>4.0V<br>BOTTOM 3.5V<br>10 gill Sut<br>1<br>se<br>—pa 3.5V ≤  60μs PULSE WIDTH<br>Tj = 25°C<br>0.1 Pret |4 Crit<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 4.   Typical Output Characteristics<br>1000<br>VDS = 25V<br>≤  60μs PULSE WIDTH<br>100<br>anAZ|ce<br>PP<br>T = 175°C<br>J<br>10 oy Anse| TJ = 25°C<br>T = -40°C<br>J<br>a arse<br>1<br>A+ -<br>Sa<br>0.1<br>a<br>2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Transfer Characteristics 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>Crss   = Cgd<br>C oss   = C ds  + C gd<br>Lt Ciss Se |<br>10000<br>SS<br>Coss<br>ee el tl<br>PL Crss<br>1000<br>pL PE<br>PtBS Pa |<br>ee ee ee<br>ll<br>100<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 8.** Typical Capacitance vs.Drain-to-Source Voltage 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>6.0V<br>5.0V<br>4.5V<br>4.0V<br>BOTTOM 3.5V<br>me<br>100<br>AHHH<br>3.5V<br>Lfue ≤ oer  60μs PULSE WIDTH td TAA<br>Tj = 175°C<br>10 IPAIN7 | |<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Output Characteristics 

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2.5<br>ID = 74A<br>2.0 VGS = 10V tA<br>UII7<br>PEELE ELLY<br>1.5 oeeeeee 4a7<br>LLL PAELLA<br>1.0 fae 4eeeeee<br>|PALL<br>TT TTT<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 7.** Normalized On-Resistance vs. Temperature 

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14<br>I = 74A<br>D<br>12 VDS= 80V<br>VDS= 50V<br>10 na V DS = 20V WY<br>86 P| | Uf | | |<br>y Z|<br>4 iAP<br>20 Vi)ToT| | ldoT<br>0 50 100 150 200 250 300<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical  Total Gate Charge vs Gate-to-Source Voltage 

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1000<br>100<br>TJ = 175°C<br>10 TJ = 25°C<br>TJ = -40°C<br>1<br>VGS = 0V<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 10.** Typical Source-Drain Diode Forward Voltage 

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10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000<br>100<br>100μsec<br>DC<br>10<br>10msec<br>1 Tc = 25°C 1msec<br>Tj = 175°C<br>Single Pulse<br>0.1<br>0 1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig11.** Maximum Safe Operating Area 

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125 4.0<br>ID = 1.0A<br>3.5 I D  = 1.0mA<br>100 ID = 250μA<br>SO 3.0 £4<br>75<br>2.5<br>cP) = PSR<br>ALLL NL 2.0 PESSSPPRS<br>50<br>LLEEN CTT RASA<br>1.5<br>25<br>EEE] «= 1.0 FEES<br>0 EN 0.5 HESCEEEEEEE<br>25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175<br>TC , CaseTemperature (°C) TJ , Temperature ( °C )<br>ID  , Drain Current (A)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 12.** Maximum Drain Current vs. Case Temperature 

**Fig 13.** Typical Threshold Voltage vs. Junction Temperature 

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1200<br>                 I<br>D<br>TOP          13A<br>1000<br>                20A<br>BOTTOM   74A<br>800600 PN | tf<br>400<br>CREEP<br>200<br>PINNG |<br>0 | |SSS<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Avalanche Energy Vs. Drain Current 

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1000<br>Allowed avalanche Current vs avalanche<br>Duty Cycle = Single Pulse<br>PTT pulsewidth, tav, assuming  Δ Tj = 150°C and  mal<br>Tstart =25°C (Single Pulse)<br>100<br>10 eSDePE 0.01 SRSTOO SeaRET0 |TTT|<br>0.05<br>oo 0.10<br>1 es<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming ΔΤ j = 25°C and  Sar as<br>| Tstart = 150°C. a a a ee ee ee<br>ee —— | |<br>(ere cece | TT<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Avalanche Current Vs.Pulsewidth 

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280<br>TOP          Single Pulse<br>240 BOTTOM   1% Duty Cycle<br>ID = 74A<br>200 PEN EEE<br>160 NUN N IN EEE<br>12080 PONUNNJ IN LE<br>40 PELENENg EINEIN<br>PEE N IN<br>0 EE NEN<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

**Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)** 

1. Avalanche failures assumption: 

- Purely a thermal phenomenon and failure occurs at a 

- temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 19a, 19b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. Δ T = Allowable rise in junction temperature, not to exceed 

- Tjmax (assumed as 25°C in Figure 15, 16). 

- tav = Average time in avalanche. 

- D = Duty cycle in avalanche =  tav ·f 

- ZthJC(D, tav) = Transient thermal resistance, see figure 11) 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·ta** 

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+<br>) ©)    •  Circuit Layout Considerations<br> •<br>| -  •   LowLow StrayLeakage Inductance inductance<br>+<br>0) - 8 <, Current Transformer - © +<br>•<br>Re •   Driver; same type as D.U.T. Vv, +<br>(4 •   dildt controlled by Rg D D -<br>•<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. Period<br>— — — , §————— | f<br>VGS=10V<br>|<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current Current ™=—<br>r di/dt /<br>@ D.U.T. VDS Waveform Diode Recovery<br>dv/dt<br>VDD<br>Re-Applied 4<br>Voltage Body Diode  Forward Drop<br>e s ee<br>Ripple  ≤ 5% ISD<br>® t<br>**----- End of picture text -----**<br>


for N-Channel HEXFET Power MOSFETs 

**Fig 17.** 

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Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>0<br>S Vgs(th)<br>201 K<br>Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>


**Fig 18a.** Gate Charge Test Circuit 

**Fig 18b.** Gate Charge Waveform 

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15V<br>L DRIVER<br>VDS<br>D.U.T +<br>- [V][DD]<br>IAS<br>e 20V dt<br>t 0.01 Ω<br>p<br>**----- End of picture text -----**<br>


**Fig 19a.** Unclamped Inductive Test Circuit 

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+<br>-<br>≤ 1<br>≤ 0.1 % us<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>+ tp -><br>/<br>y |i<br>yf<br>/<br>IAS<br>Fig 19b.   Unclamped Inductive Waveforms<br>V90%DS fe<br>x |<br>|<br>10% /\ |<br>/\ _\<br>VGS<br>| | \<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 19b.** Unclamped Inductive Waveforms 

**Fig 20a.** Switching Time Test Circuit 

**Fig 20b.** Switching Time Waveforms 

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations 

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G = GATE<br>D = DRAIN<br>S = SOURCE<br>D D<br>ail 070 7<br>S S<br>S S<br>D G D<br>S S<br>S S<br>D | a D<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package 

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations 

|IMPERIAL<br>METRIC<br>DIMENSIONS<br>~~Po~~|
|---|
|MAX<br>0.360<br>0.280<br>0.236<br>0.026<br>0.024<br>0.048<br>0.017<br>0.030<br>0.017<br>0.058<br>0.106<br>0.0274<br>0.0031<br>0.007<br>MIN<br>0.356<br>0.270<br>0.232<br>0.022<br>0.023<br>0.046<br>0.015<br>0.029<br>0.015<br>0.053<br>0.099<br>0.0235<br>0.0008<br>0.003<br>CODE<br>A<br>B<br>C<br>D<br>E<br>F<br>G<br>H<br>J<br>K<br>L<br>M<br>N<br>P<br>MIN<br>9.05<br>6.85<br>5.90<br>0.55<br>0.58<br>1.18<br>0.98<br>0.73<br>0.38<br>1.34<br>2.52<br>0.616<br>0.020<br>0.09<br>MAX<br>9.15<br>7.10<br>6.00<br>0.65<br>0.62<br>1.22<br>1.02<br>0.77<br>0.42<br>1.47<br>2.69<br>0.676<br>0.080<br>0.18<br>~~es ee~~<br>~~ft~~<br>~~ee ee ee ee~~<br>~~ee ee ee ee~~<br>~~ee ee ee ee~~<br>~~ee ee ee ee~~<br>~~ee ee ee ee~~<br>~~ee ee ee ee~~<br>~~ee ee ee ee~~<br>~~ee ee ee ee~~<br>~~ee ee ee ee~~<br>~~ee ee ee ee~~<br>~~ee ee ee~~<br>~~ee ee ee ee~~<br>~~eeee~~|



## DirectFET Part Marking 

## **GATE MARKING** 

## **LOGO** 

## **PART NUMBER** 

## **BATCH NUMBER** 

## **DATE CODE** 

Line above the last character of the date code indicates "Lead-Free" 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package 

## DirectFET ™ Tape & Reel Dimension (Showing component orientation). 

NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. (ordered as IRF7769L2PBF). 

|**REEL DIMENSIONS**<br>STANDARD OPTION**(QTY 4000)**<br>MIN<br>330.0<br>20.2<br>12.8<br>1.5<br>100.0<br>N.C<br>16.4<br>15.9<br>CODE<br>A<br>B<br>C<br>D<br>E<br>F<br>G<br>H<br>MAX<br>N.C<br>N.C<br>13.2<br>N.C<br>N.C<br>22.4<br>18.4<br>18.4<br>MIN<br>12.992<br>0.795<br>0.504<br>0.059<br>3.937<br>N.C<br>0.646<br>0.626<br>MAX<br>N.C<br>N.C<br>0.520<br>N.C<br>N.C<br>0.889<br>0.724<br>0.724<br>METRIC<br>IMPERIAL<br>pepe<br>a<br>ee<br>ee<br>~~re~~<br>~~ee ee~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~eeee~~<br>~~ee ee ee ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~ee~~<br>ee~~ee eee~~|**REEL DIMENSIONS**<br>STANDARD OPTION**(QTY 4000)**<br>MIN<br>330.0<br>20.2<br>12.8<br>1.5<br>100.0<br>N.C<br>16.4<br>15.9<br>CODE<br>A<br>B<br>C<br>D<br>E<br>F<br>G<br>H<br>MAX<br>N.C<br>N.C<br>13.2<br>N.C<br>N.C<br>22.4<br>18.4<br>18.4<br>MIN<br>12.992<br>0.795<br>0.504<br>0.059<br>3.937<br>N.C<br>0.646<br>0.626<br>MAX<br>N.C<br>N.C<br>0.520<br>N.C<br>N.C<br>0.889<br>0.724<br>0.724<br>METRIC<br>IMPERIAL<br>pepe<br>a<br>ee<br>ee<br>~~re~~<br>~~ee ee~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~eeee~~<br>~~ee ee ee ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~ee~~<br>ee~~ee eee~~|**REEL DIMENSIONS**<br>STANDARD OPTION**(QTY 4000)**<br>MIN<br>330.0<br>20.2<br>12.8<br>1.5<br>100.0<br>N.C<br>16.4<br>15.9<br>CODE<br>A<br>B<br>C<br>D<br>E<br>F<br>G<br>H<br>MAX<br>N.C<br>N.C<br>13.2<br>N.C<br>N.C<br>22.4<br>18.4<br>18.4<br>MIN<br>12.992<br>0.795<br>0.504<br>0.059<br>3.937<br>N.C<br>0.646<br>0.626<br>MAX<br>N.C<br>N.C<br>0.520<br>N.C<br>N.C<br>0.889<br>0.724<br>0.724<br>METRIC<br>IMPERIAL<br>pepe<br>a<br>ee<br>ee<br>~~re~~<br>~~ee ee~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~eeee~~<br>~~ee ee ee ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~ee~~<br>ee~~ee eee~~|
|---|---|---|
|A<br>~~re~~<br>~~ee~~<br>~~ee~~|330.0<br>N.C<br>~~re~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|N.C<br>12.992<br>N.C<br>~~ee ee~~<br>~~eeee~~<br>~~eeee~~|
|B<br>~~ee~~<br>~~ee~~<br>~~ee~~|20.2<br>N.C<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~eeee~~|N.C<br>0.795<br>N.C<br>~~ee ee~~<br>~~eeee~~<br>~~eeee~~|
|C<br>~~ee~~<br>~~ee~~<br>~~ee~~|12.8<br>13.2<br>~~ee~~<br>~~ee~~<br>~~eeee~~<br>~~ee~~<br>~~ee~~|13.2<br>0.504<br>0.520<br>~~eeee~~<br>~~eeee~~<br>~~eeee~~|
|D<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.5<br>N.<br>~~ee ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|N.C<br>0.059<br>N.C<br> ~~ee ee~~<br>~~eeee~~<br>~~ee~~<br>~~ee~~|
|E<br>~~ee~~<br>~~ee~~<br>~~ee~~|100.0<br>N.<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|N.C<br>3.937<br>N.C<br>~~ee ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|F<br>~~ee~~<br>~~ee~~<br>~~ee~~|N.C<br>22.4<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|22.4<br>N.C<br>0.889<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~eeee~~|
|G<br>~~ee~~<br>~~ee~~<br>~~ee~~|16.4<br>18<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>ee~~ee~~|8.4<br>0.646<br>0.724<br>~~ee~~<br>~~ee~~<br>~~eeee~~<br>~~ee eee~~|
|H<br>~~ee~~<br>~~ee~~|15.9<br>18.4<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>ee~~ee~~|18.4<br>0.626<br>0.724<br>~~ee ee~~<br>~~ee eee~~|



LOADED TAPE FEED DIRECTION 

|NOTE: CONTROLLING<br>DIMENSIONS IN MM|DIMENSIONS<br>METRIC<br>IMPERIAL<br>~~PO~~|
|---|---|
||MIN<br>11.90<br>3.90<br>15.90<br>7.40<br>7.20<br>9.90<br>1.50<br>1.50<br>CODE<br>A<br>B<br>C<br>D<br>E<br>F<br>G<br>H<br>MAX<br>12.10<br>4.10<br>16.30<br>7.60<br>7.40<br>10.10<br>NC<br>1.60<br>MIN<br>0.469<br>0.154<br>0.626<br>0.291<br>0.284<br>0.390<br>0.059<br>0.059<br>MAX<br>0.476<br>0.161<br>0.642<br>0.299<br>0.291<br>0.398<br>NC<br>0.063<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee eee~~<br>~~ee~~<br>~~ee~~<br>~~eeeee~~<br>~~ee~~<br>~~ee~~<br>~~eeeee~~<br>~~ee~~<br>~~ee~~<br>~~eeeee~~<br>~~ee~~<br>~~ee~~<br>~~ee eee~~<br>~~ee~~<br>~~ee~~<br>~~eeeee~~<br>~~ee~~<br>~~ee~~<br>~~eeeee~~<br>~~a~~<br>~~ee~~<br>~~eeee~~|



Note: For the most current drawing please refer to IR website at http://www.irf.com/package 

## **Qualification Information[†]** 

|**Qualification Information[†]**|||
|---|---|---|
|Qualification level|Industrial††||
||(per JEDEC JESD47F†††guidelines)||
||Comments: This family of products has passed JEDEC’s Industrial<br>qualification. IR’s Consumer qualification level is granted by extension of the<br>higher Industrial level.||
|Moisture Sensitivity Level|DFET2|MSL1<br>(perJEDEC J-STD-020D†††)|
|RoHS Compliant|Yes||



T Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability tH Higher qualification ratings may be available should the user have such requirements. 

- Higher qualification ratings may be available should the user have such requirements. 

- Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ 

- Ht Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Revision History**|**Revision History**|
|---|---|
|**Date**<br>**Revision History**|**Comments**<br>**Revision History**|
|5/6/2014|•Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option  (EOL notice #264).<br>•Updated data sheet based on corporate template.|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF7769L2TRPBF/power-mosfet-n-channel-100-v-124-a-00028-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irf7769l2trpbf/mosfet-n-ch-100v-375a-directfet/dp/2725915)
---

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