# Power MOSFET, N Channel, 100 V, 375 A, 3500 µohm, DirectFET L8, Surface Mount

![Product image](https://novapart.co/image/farnell:2725914/)

**URL**: https://novapart.co/products/IRF7769L1TRPBF/power-mosfet-n-channel-100-v-375-a-3500-ohm
**SKU**: IRF7769L1TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.8500
**Stock**: 10+
**Lead Time**: 14 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:375A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 15Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 125W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DirectFET L8 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 375A |
| Drain Source On State Resistance | 3500µohm |
| Gate Source Threshold Voltage Max | 2.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725914/)

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|||||||||
|---|---|---|---|---|---|---|---|
|IRF7769L1TRPbF|
|__————————————LL|
|DirectFET™ Power MOSFET|
|Typical values (unless otherwise specified)|
|Applications|
||RoHS Compliant, Halogen Free||VDSS|VGS|RDS(on)|
||Lead-Free (Qualified up to 260°C Reflow)||100V min|±20V max|2.8m@ 10V|
|Ideal for High Performance Isolated Converter|
|Primary Switch Socket|Qg  tot|Qgd|Vgs(th)|
|Optimized for Synchronous Rectification|
|200nC|110nC|2.7V|
|Low Conduction Losses|
|High Cdv/dt Immunity|
|Low Profile (<0.7mm)|S|S|
||Dual Sided Cooling Compatible||S|S|
||Compatible with existing Surface Mount Techniques||D|G|SS|SS|D|
|Industrial Qualified|
|DirectFET|™|ISOMETRIC|
|Applicable DirectFET Outline and  Substrate Outline|OO||L8|
|SB|SC|M2|M4|L4|L6|L8|
|[tTTT|—Eee|
|Description|
|The IRF7769L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET|[TM]|packaging|
|to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The|
|DirectFET™ package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor|
|phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods|
|and processes. The DirectFET™ package allows dual sided cooling to maximize thermal transfer in power systems.|

**----- End of picture text -----**<br>


The IRF7769L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters. 

## **Ordering Information** 

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|||||||||
|---|---|---|---|---|---|---|---|
|Standard Pack|
|Part number|Package Type|Note|
|Form|Quantity|
|IRF7769L1TRPbF|DirectFET Large|Can|Tape|and Reel|4000|“TR” suffix|
|Absolute Maximum Ratings gs s|
|Parameter|Max.|Units|
|VDS|Drain-to-Source Voltage|100|
|VGS|Gate-to-Source Voltage|±20|V|
|ID|@ TC = 25°C|Continuous Drain Current, VGS|@ 10V (Silicon Limited)|124|
|ID @ TC|= 100°C|Continuous Drain Current, VGS @ 10V (Silicon Limited)|88|
|ID|@ TA = 25°C|Continuous Drain Current, VGS|@ 10V (Silicon Limited)|20|A|
|ID|@ TC = 25°C|Continuous Drain Current, VGS|@ 10V (Package Limited)||375|
|IDM|Pulsed Drain Current|500|
|EAS|Single Pulse Avalanche Energy |260|mJ|
|IAR|Avalanche Current |74|A|
|12.00|3.10|
|ID = 74A|TA= 25°C|
|10.00|
|VGS = 7.0V|
|8.00|3.00|
|VGS = 8.0V|
|6.00|TJ = 125°C|VGS = 10V|
|4.00|a]|||2.90|
|VGS = 15V|
|Esl|ES|
|2.00|
|TJ = 25°C|
|CLE|2.80|TP|
|0.00|
|20|40|60|80|100|
|2.0|4.0|6.0|8.0|10.0|12.0|14.0|16.0|
|ID, Drain Current (A)|
|VGS, Gate-to-Source Voltage (V)|

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**Absolute Maximum Ratings gs s** 

**Fig 2.** Typical On-Resistance vs. Drain Current 

**Fig 1.** Typical On-Resistance vs. Gate Voltage Notes 

 TC measured with thermocouple mounted to top (Drain) of part. 

-  Click on this section to link to the appropriate technical paper. 

   -  Repetitive rating;  pulse width limited by max. junction temperature. 

-  Click on this section to link to the DirectFET Website. 

   -  Starting TJ = 25°C, L = 0.09mH, RG = 25, IAS = 74A. 

-  Surface mounted on 1 in. square Cu board, steady state. 

1 

2016-10-14 

~~Cinfineon~~ 

IRF7769L1TRPbF ~~LLL~~ 

**Static @ TJ = 25°C (unless otherwise specified)** 

|~~ee~~<br>~~ee~~|**Parameter**<br>~~Sd~~<br>~~ne~~|**Min.**<br>~~Sd~~<br>~~ts ts~~|**Typ. Max.**<br>~~Sd~~<br>~~ts~~|**. Max.**<br>~~Sd~~<br>~~ts~~|**Units**<br>~~Sd~~|**Conditions**<br>~~Sd~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~ee~~<br>~~ee~~<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~Sd~~<br>~~ne~~<br>~~nn~~|100<br>~~Sd~~<br>~~ts ts~~<br>~~(III~~|–––<br>~~Sd~~<br>~~ts~~<br>~~I~~|–––<br>~~Sd~~<br>~~ts~~<br>~~I~~|V<br>~~Sd~~<br>~~(OO~~|VGS= 0V, ID= 250µA<br>~~Sd~~<br>~~(I~~|
|VDSS/TJ<br>~~ee~~<br>~~es~~<br>~~es~~|Breakdown Voltage Temp. Coefficient<br>~~ne ~~<br>~~nn~~<br>~~rn~~|–––<br> ~~ts ts~~<br>~~(III~~<br>~~ts~~|0.02<br>~~ts~~<br>~~I~~|–––<br>~~ts~~<br>~~I~~|V/°C Reference to 25°C<br>~~(OO~~|V/°C Reference to 25°C,ID= 2mA<br>~~(I~~|
|RDS(on)<br>~~es~~<br>~~es~~|Static Drain-to-Source On-Resistance<br>~~nn~~<br>~~rn~~|–––<br>~~(III ~~<br>~~ts~~|2.8<br> ~~I ~~|3.5<br> ~~I ~~|m<br> ~~(OO ~~|VGS= 10V, ID= 74A<br> ~~(I~~|
|VGS(th)<br>~~es~~|Gate Threshold Voltage<br>~~rn ~~|2.0<br> ~~ts~~|2.7|4.0|V|VDS= VGS, ID= 250µA<br>~~SO~~|
|VGS(th)/TJ|Gate Threshold Voltage Temp. Coefficient|–––|-10<br>~~SO~~|–––<br>~~SO~~|mV/°C<br>~~SO~~||
|IDSS<br>~~PE~~|Drain-to-Source Leakage Current<br>~~PE~~|–––<br>~~PE~~|–––<br>~~PE~~<br>~~SO~~|20<br>~~PE~~<br>~~SO~~|µA<br>~~PE~~<br>~~SO~~|VDS= 100 V,VGS= 0V<br>~~PE~~<br>~~SO~~|
|||–––<br>~~PE~~|–––<br>~~PE~~<br>~~SO~~|250<br>~~PE~~<br>~~SO~~||VDS= 80V,VGS= 0V,TJ=125°C<br>~~PE~~<br>~~SO~~|
|IGSS<br>~~rr~~|Gate-to-Source Forward Leakage<br>~~rr~~|–––<br>~~rr~~|–––<br>~~SO~~<br>~~rr~~|100<br>~~SO~~<br>~~rr~~|nA<br>~~SO~~<br>~~rr~~|VGS= 20V<br>~~SO~~<br>~~rr~~|
||Gate-to-SourceReverseLeakage<br>~~rr~~|–––<br>~~rr~~|–––<br>~~rr~~|-100<br>~~rr~~||VGS= -20V<br>~~rr~~|
|gfs|Forward Transconductance|410|–––|–––|S|VDS= 25V,ID= 74A|
|Qg<br>~~ee~~|Total Gate Charge<br>~~ee~~|–––<br>~~ee~~|200<br>~~ee~~|300<br>~~ee~~|<br>nC<br>~~ee~~|VDS= 50V<br>VGS= 10V<br>ID= 74A<br>See Fig.9<br>~~ee~~|
|Qgs1<br>~~ee~~|Pre– VthGate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~|30<br>~~ee~~|–––<br>~~ee~~|||
|gs1<br>Qgs2<br>~~ee~~<br>~~ee~~|Post– Vth Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~|9.0<br>~~ee~~|–––<br>~~ee~~|||
|Qgd<br>~~ee~~<br>~~ee~~|Gate-to-Drain Charge<br>~~ee~~|–––<br>~~ee~~|110<br>~~ee~~|165<br>~~ee~~|||
|Qgodr<br>~~ee~~<br>~~ee~~<br>~~—~~|Gate Charge Overdrive<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|51<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|||
|Qsw<br>~~ee~~<br>~~—~~|Switch Charge(Qgs2+ Qgd)<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|119<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|||
|Qoss<br>~~ee~~|Output Charge<br>~~ee~~|–––<br>~~ee~~|53<br>~~ee~~|–––<br>~~ee~~|nC<br>~~ee~~|VDS= 16V,VGS= 0V<br>~~ee~~|
|RG<br>~~ee~~<br>~~ee~~|Gate Resistance<br>~~ee~~|–––<br>~~ee~~|1.5<br>~~ee~~|–––<br>~~ee~~|<br>~~ee~~|~~ee~~|
|td(on)<br>~~ee~~|Turn-On DelayTime|–––|44|–––|ns|VDD= 50V, VGS= 10V<br>ID= 74A<br>RG= 1.8|
|tr<br>~~ee~~<br>~~ee~~|Rise Time|–––|32|–––|||
|td(off)<br>~~ee~~|Turn-Off DelayTime|–––|92|–––|||
|tf<br>~~ee~~<br>~~————e~~|Fall Time<br>~~————e~~|–––<br>~~————e~~|41<br>~~————e~~|–––<br>~~————e~~|||
|Ciss<br>~~————e~~|Input Capacitance<br>~~————e~~|––– 11560 –––<br>~~————e~~|––– 11560 –––<br>~~————e~~|––– 11560 –––<br>~~————e~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz<br>~~ee~~|
|Coss|Output Capacitance|–––|1240|–––|||
|Crss<br>~~a~~|Reverse Transfer Capacitance<br>~~en~~|–––|590|–––|||
|Coss<br>~~a~~<br>~~es~~|Output Capacitance<br>~~en~~|–––<br>~~GO~~|6665<br>~~ee~~|–––||VGS=0V, VDS= 1.0V,ƒ =1.0MHz<br>~~ee~~<br>~~ee~~|
|Coss<br>~~a ~~<br>~~es~~|Output Capacitance<br> ~~en~~|–––<br>~~GO~~|690<br>~~ee~~|–––||VGS=0V,VDS= 80V,ƒ=1.0MHz<br>~~ee~~<br>~~ee~~|
|**Diode Characteristics**<br>~~es~~<br>~~GO ee~~<br>~~ee~~<br>~~ee~~|||||||
|~~ee~~|**Parameter **<br>|**Min.**<br>|**Typ. M**<br>|**. Max.**<br>|**Units**<br>|**Conditions**<br>|
|IS<br>~~eea~~|Continuous Source Current<br>(Body Diode)<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|124<br>~~a~~|A<br>~~a~~<br>~~Cr~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunctiondiode.<br>~~a~~<br>~~Cr~~|
|ISM<br>~~eea~~<br>~~ee~~<br>~~ee~~|Pulsed Source Current<br>(BodyDiode)<br>~~a~~<br>~~Cr~~|–––<br>~~a~~<br>~~Cr~~<br>~~(tt~~|–––<br>~~a~~<br>~~Cr~~<br>~~(ts~~|500<br>~~a~~<br>~~Cr~~<br>~~(ts~~|||
|VSD<br>~~ee~~<br>~~ee~~|Diode Forward Voltage<br>~~Cr~~|–––<br>~~Cr~~<br>~~(tt~~|–––<br>~~Cr~~<br>~~(ts~~|1.3<br>~~Cr~~<br>~~(ts~~|V<br>~~Cr~~|TJ= 25°C,IS= 74A,VGS= 0V<br>~~Cr~~|
|trr<br>Qrr<br>~~ee~~<br>~~ee~~|Reverse Recovery Time<br>Reverse RecoveryCharge<br>~~Cr~~|–––<br>~~Cr~~<br>~~(tt~~|75<br>~~Cr~~<br>~~(ts~~|112<br>~~Cr~~<br>~~(ts~~|ns<br>nC<br>~~Cr~~|TJ= 25°C,IF= 74A,VDD= 50V<br>di/dt = 100A/µs<br>~~Cr~~|
|||–––<br>~~(tt~~|220<br>~~(ts~~|330<br>~~(ts~~|||



~~Cinfineon~~ 

## IRF7769L1TRPbF ~~Ts~~ 

## **Absolute Maximum Ratings** 

|**Symbol**|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|PD @TC= 25°C|Power Dissipation|125|W|
|PD@TC =100°C Power Dissipation|C Power Dissipation|63||
|PD@TA =25°C|Power Dissipation|3.3||
|TP|Peak SolderingTemperature|270|°C|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175||



## **Thermal Resistance** 

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Symbol  Parameter  Typ.  Max.  Units<br>RqJA Junction-to-Ambient  –––  45<br>RqJA Junction-to-Ambient  12.5  –––<br>RqJA Junction-to-Ambient  20  –––  °C/W<br>RqJC Junction-to-Can  ––– 1.2<br>RqJA-PCB Junction-to-PCB Mounted  ––– 0.4<br>10<br>1 PLLA<br>D = 0.500.20 ee1  eee SS SseSlieeee—<br>0.010.1 Ceeeemee 0.01 0.020.050.10 eenallleee ees:  J  J  1 1 Seee R1R1 2  R22R2 re R 3 3R  33  R 4  4R4 4 C fdee  CRi  0.1080 0.6140  (°C/W) 0.000171 0.053914  i (sec)<br>Ci= iRi 0.4520  0.006099<br>Ci= iRi<br>1.47e-05  0.036168<br>re ee ee<br>0.001 SINGLE PULSE<br>Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


## **Notes:** 

-  Surface mounted on 1 in. square Cu board, steady state. 

-  TC measured with thermocouple incontact with top (Drain) of part. 

-  Repetitive rating;  pulse width limited by max. junction temperature. 

   -  Used double sided cooling, mounting pad with large heatsink.  Mounted on minimum footprint full size board with metalized back and with small clip heatsink. 

   -  R is measured at TJ of approximately 90°C. 

-  Surface mounted on 1 in. square Cu board  (still air). 

-  Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 

3 

2016-10-14 

IRF7769L1TRPbF 

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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>6.0V 6.0V<br>100 TEs 5.0V 5.0V ple<br>4.5V 4.5V<br>4.0V 4.0V<br>BOTTOM 3.5V BOTTOM 3.5V<br>10 Sl Bl 100 AL<br>1<br>3.5V<br>a 3.5V  60µs PULSE WIDTH  60µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>cima<br>0.1 10<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Output Characteristics<br>Fig 4.   Typical Output Characteristics<br>1000 2.5<br>VDS = 25V ID = 74A<br> 60µs PULSE WIDTH V GS  = 10V<br>100  -Al 2.0 foo<br>T = 175°C<br>10 T J  = 25°C 1.5<br>J<br>T = -40°C<br>J<br>1 Wit 1.0 TLE<br>Ty TLCLPATELL<br>0.1 VRE} = 0.5 TTT<br>2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>Fig 6.   Typical Transfer Characteristics  Fig 7.   Normalized On-Resistance vs. Temperature<br>100000<br>VGS   = 0V,       f = 1 MHZ 14 I = 74A<br>Ciss    = Cgs + Cgd,  Cds SHORTED D<br>Crss   = Cgd  12 VDS= 80V<br>C oss   = C ds  + C gd VDS= 50V<br>T. _<br>10000 Ciss 10 V DS = 20V<br>8<br>Coss<br>6<br>Crss<br>1000<br>4<br>2<br>100 PR) =  ERE 0 Ae<br>1 10 100 0 50 100 150 200 250 300<br>VDS, Drain-to-Source Voltage (V)  QG  Total Gate Charge (nC)<br>Fig 8.   Typical Capacitance vs. Drain-to-Source Voltage  Fig 9.   Typical Gate Charge vs. Gate-to-Source Voltage<br>4  2016-10-14<br>ee<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


IRF7769L1TRPbF ~~Td~~ 

## ~~Cinfineon~~ 

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1000 10000<br>OPERATION IN THIS AREA<br>== LIMITED BY R DS(on)<br>1000<br>100<br>TJ = 175°C 100 100µsec<br>10 TJ = 25°C<br>DC<br>TJ = -40°C 10<br>10msec<br>LAR 1 PAR<br>1 Tc = 25°C 1msec<br>Tj = 175°C<br>VGS = 0V Single Pulse<br>0.1 iifLib 0.1 issHl<br>0.2 0.4 0.6 0.8 1.0 1.2 0 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>Fig 11.   Maximum Safe Operating Area<br>Fig 10.   Typical Source-Drain Diode Forward Voltage<br>125 4.0<br>ID = 1.0A<br>3.5 I D  = 1.0mA<br>100 ID = 250µA<br>3.0<br>RO | |RE<br>75 ELAN N 2.5 POSSEIS<br>2.0<br>50 LEE COO AST<br>1.5<br>25 ELELELEEN HENS<br>1.0<br>0 ELLE ELLE\ 0.5 PECELELECCELELEL L NE<br>25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175<br>TC , CaseTemperature (°C) TJ , Temperature ( °C )<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>VGS(th) Gate threshold Voltage (V)<br>ID  , Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 12.** Maximum Drain Current vs. Case Temperature 

**Fig 13.** Typical Threshold Voltage vs. Junction Temperature 

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**----- Start of picture text -----**<br>
1200<br>                 ID<br>TOP          13A<br>1000<br>                20A<br>BOTTOM   74A<br>800600 ‘cooNaRGR<br>400<br>NING<br>200<br>BNE<br>|OSS<br>0<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Avalanche Energy vs. Drain Current 

5 ~~=~~ 

2016-10-14 

~~Cinfineon~~ 

## IRF7769L1TRPbF ~~Ts~~ 

**==> picture [432 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>Allowed avalanche Current vs avalanche<br>Duty Cycle = Single Pulse<br>pulsewidth, tav, assuming  Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>100<br>0.01<br>10<br>0.05<br>0.10<br>| |<br>1 ET AZeTcs rel<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  j = 25°C and<br>Tstart = 150°C.<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


## **Fig 15.** Typical Avalanche Current vs. Pulse width 

**==> picture [212 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
280<br>TOP          Single Pulse<br>240 BOTTOM   1% Duty Cycle<br>ID = 74A<br>200<br>160120 NSECNEERNEEEEAN IN<br>8040 PENGUINENGINNg IN<br>0 PET N g INANS IN hs<br>t TT<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 )** 

- 1.Avalanche failures assumption: 

- Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 19a, 19b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. T = Allowable rise in junction temperature, not to exceed 

- Tjmax (assumed as 25°C in Figure 15, 16). 

- tav = Average time in avalanche. 

- D = Duty cycle in avalanche =  tav ·f 

- ZthJC(D, tav) = Transient thermal resistance, see Figures 3) 

PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] 

EAS (AR) = PD (ave)·tav 

## **Fig 16.** Maximum Avalanche Energy vs. Temperature 

**Fig 17.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

6 

2016-10-14 

~~Cinfineon~~ 

IRF7769L1TRPbF ~~Ts~~ 

**Fig 18a.** Gate Charge Test Circuit 

**==> picture [192 x 121] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>- [V][DD]<br>A 20V JL IAS<br>tp 0.01<br>v aAl |<br>**----- End of picture text -----**<br>


**Fig 19a.** Unclamped Inductive Test Circuit 

**Fig 20a.** Switching Time Test Circuit 

**Fig 18b.** Gate Charge Waveform 

**==> picture [219 x 128] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS<br><4 tp ><br>IAS<br>**----- End of picture text -----**<br>


**Fig 19b.** Unclamped Inductive Waveforms 

**Fig 20b.** Switching Time Waveforms 

2016-10-14 

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IRF7769L1TRPbF ~~Ts~~ 

## **DirectFET™  Board Footprint, L8 Outline (Large Size Can, 8-Source Pads)** 

Please see DirectFET™ application note AN-1035 for all details regarding the assembly of DirectFET™. This includes all recommendations for stencil and  substrate designs. 

**==> picture [351 x 185] intentionally omitted <==**

**----- Start of picture text -----**<br>
G = GATE<br>D = DRAIN<br>S = SOURCE<br>D D<br>S S<br>i]<br>A S S<br>D G D A<br>i] S S<br>S S<br>D D<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to website at http://www.irf.com/package/ 

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IRF7769L1TRPbF 

## **DirectFET®  Outline Dimension, L8 Outline (Large Size Can, 8-Source Pads)** 

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and  substrate designs. 

**==> picture [397 x 158] intentionally omitted <==**

**----- Start of picture text -----**<br>
DIMENSIONS<br>METRIC IMPERIAL<br>4~ CODE MIN MAX MIN MAX<br>A 9.05 9.15 0.356 0.360<br>B 6.85 7.10 0.270 0.280<br>C 5.90 6.00 0.232 0.236<br>D 0.55 0.65 0.022 0.026<br>E 0.58 0.62 0.023 0.024<br>F 1.18 1.22 0.046 0.048<br>A G 0.98 1.02 0.039 0.040<br>I H 0.73 0.77 0.029 0.030<br>J 0.38 0.42 0.015 0.017<br>K 1.35 1.45 0.053 0.057<br>L 2.55 2.65 0.100 0.104<br>L1 5.35 5.45 0.211 0.215<br>M 0.68 0.74 0.027 0.029<br>= T I L i RP 0.090.02 0.170.08 0.0030.001 0.0070.003<br>**----- End of picture text -----**<br>


## **DirectFET[™] Part Marking** 

**==> picture [303 x 163] intentionally omitted <==**

**----- Start of picture text -----**<br>
GATE MARKING<br>+ a a LOGO<br>PART NUMBER<br>BATCH NUMBER<br>DATE CODE<br>Line above the last character of<br>the date code indicates "Lead-Free"<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to website at http://www.irf.com/package/ 

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## IRF7769L1TRPbF ~~LLL~~ 

## **DirectFET[™] Tape & Reel Dimension (Showing component orientation).** 

**==> picture [146 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
LOADED TAPE FEED DIRECTION<br>**----- End of picture text -----**<br>


**==> picture [6 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
+<br>**----- End of picture text -----**<br>


NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. (ordered as IRF7769L1TRPBF). 

||**REEL DIMENSIONS**|**REEL DIMENSIONS**|**REEL DIMENSIONS**||
|---|---|---|---|---|
|STANDARD OPTION|||STANDARD OPTION**(QTY 4000)**||
||METRIC||IMPERIAL||
|CODE|MIN|MAX|MIN|MAX|
|A|330.00|N.C|12.992|N.C|
|B|20.20|N.C|0.795|N.C|
|C|12.80|13.20|0.504|0.520|
|D|1.50|N.C|0.059|N.C|
|E|99.00|100.00|3.900|3.940|
|F|N.C|22.40|N.C|0.880|
|G|16.40|18.40|0.650|0.720|
|H|15.90|19.40|0.630|0.760|



NOTE: CONTROLLING DIMENSIONS IN MM 

|DIMENSIONS|DIMENSIONS|DIMENSIONS|DIMENSIONS|DIMENSIONS|
|---|---|---|---|---|
||METRIC||IMPERIAL||
|CODE|CODE<br>MIN|MAX|MIN|MAX|
|A|11.90|12.10|4.69|0.476|
|B|3.90|4.10|0.154|0.161|
|C|15.90|16.30|0.623|0.642|
|D|7.40|7.60|0.291|0.299|
|E|7.20|7.40|0.283|0.291|
|F|9.90|10.10|0.390|0.398|
|G|1.50|N.C|0.059|N.C|
|H|1.50|1.60|0.059|0.063|



Note: For the most current drawing please refer to website at http://www.irf.com/package/ 

## **Qualification Information** 

|**Qualification Information**|||
|---|---|---|
|**Qualification Level**|Industrial *<br>(per JEDEC JESD47F†guidelines)||
|**Moisture Sensitivity Level**|DirectFET (Large -Can)|DirectFET (Large -Can)<br>MSL1<br>(per JEDEC J-STD-020D†)|
|**RoHS Compliant**|Yes||



- Applicable version of JEDEC standard at the time of product release. 

- Industrial qualification standards except autoclave test conditions. 

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## infineon IRF7769L1TRPbF ~~LL~~ **Revision History** 

|**Date**|**Comments**|
|---|---|
|2/13/2013|<br>TR1 option removed and Tape & Reel Info updated accordingly. Hyperlinks added throw-out the document|
|10/14/2016|<br>Changed datasheet with “Infineon” logo –all pages.<br><br>Corrected Outline Dimension, L8 Outline on page 9.<br><br>Added disclaimer on lastpage.|



**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

11 

2016-10-14 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF7769L1TRPBF/power-mosfet-n-channel-100-v-375-a-3500-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf7769l1trpbf/mosfet-n-ch-100v-375a-directfet/dp/2725914)
---

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