# Power MOSFET, N Channel, 60 V, 375 A, 0.0011 ohm, DirectFET L8, Surface Mount

![Product image](https://novapart.co/image/farnell:2803415/)

**URL**: https://novapart.co/products/IRF7749L2TRPBF/power-mosfet-n-channel-60-v-375-a-00011-ohm
**SKU**: IRF7749L2TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.8000
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | DirectFET |
| Power Dissipation | 125W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 125W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0011ohm |
| Transistor Case Style | DirectFET L8 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 375A |
| Drain Source On State Resistance | 0.0011ohm |
| Gate Source Threshold Voltage Max | 2.9V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2803415/)

> DirectFET ™ Power MOSFET 

> RoHS Compliant, Halogen FreeLead-Free (Qualified up to 260°C Reflow) o Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques Industrial Qualified 

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VDSS VGS RDS(on)<br>60V min ±20V max 1.1m Ω @ 10V<br>Qg  tot Qgd   Vgs(th)<br>200nC 71nC 2.9V<br>ii<br>S S<br>S S<br>D G S S D<br>“ S “ S<br>A<br>DirectFET ™  ISOMETRIC<br>**----- End of picture text -----**<br>


Applicable DirectFET Outline and  Substrate Outline **SB SC M2 M4 L4 L6 L8** ~~[LfOETf ft~~ 

## **Description** 

The IRF7749L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET[TM] packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D[2] PAK and only 0.7 mm profile.  The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. 

The IRF7749L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters. 

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po Standard Pack<br>Orderable part number Package Type Note<br>cre Form Quantity<br>IRF7749L2TRPbF DirectFET2 Large Can Tape and Reel ees 4000 "TR" suffix<br>| IRF7749L2TR1PbF DirectFET2 Large Can Tape and Reel 1000 SE "TR1" suffix  EOL notice # 264<br>Absolute Maximum Ratings<br>Parameter Max. Units<br>V DS a Drain-to-Source Voltage 60 V<br>V GS a Gate-to-Source Voltage  ±20<br>I D @ T C = 25°C   Continuous Drain Current, V GS @ 10V (Silicon Limited) 200<br>I D @ T C = 100°C Continuous Drain Current, V GS @ 10V (Silicon Limited) 140 A<br>I D @ T A = 25°C = Continuous Drain Current, V GS @ 10V (Silicon Limited) 33<br>I D @ T C = 25°C   a Continuous Drain Current, V GS @ 10V (Package Limited)  < 375<br>I DM —<—<—_—_——— Pulsed Drain Current  800 ae<br>E AS Single Pulse Avalanche Energy  260 mJ<br>I AR © e Avalanche Current sG 120 A<br>12.0 1.60<br>ID = 120A TC= 25°C VGS = 6.0V<br>10.0 VGS = 8.0V<br>8.0 1.40 VGS = 10V<br>VGS = 14V<br>6.0 He}rootft | 1.20 p=aene oe =<br>TJ = 25°C<br>4.0<br>| BY | TJ = 125°C 1.00 S—=———<br>2.0<br>0.0 ———— FP<br>0.80<br>4.0 6.0 8.0 10.0 12.0 14.0 16.0<br>40 80 120 160 200<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain Current (A)<br>Fig 1.    Typical On-Resistance vs. Gate Voltage<br>Fig 2.    Typical On-Resistance vs. Drain Current<br>Ω)<br>Typical  RDS(on) (m<br>Ω)<br>Typical  RDS(on),  (m<br>**----- End of picture text -----**<br>


Notes: ® Click on this section to link to the appropriate technical paper. ® TC measured with thermocouple mounted to top (Drain) of part. measured with thermocouple mounted to top (Drain) of part. 

® TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.035mH, RG = 25 Ω , IAS = 120A. 

® Click on this section to link to the appropriate technical paper. ® Click on this section to link to the DirectFET Website. © ® Surface mounted on 1 in. square Cu board, steady state. © 

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**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage|60|–––|–––|V|VGS= 0V, ID= 250μA|
|ΔΒVDSS/ΔTJ|Breakdown Voltage Temp. Coefficient|–––|0.03|–––|V/°C|Reference to 25°C, ID= 2mA|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|1.1|1.50|mΩ|VGS= 10V, ID= 120A�|
|VGS(th)|Gate Threshold Voltage|2.0|2.9|4.0|V|VDS= VGS, ID= 250μA|
|ΔVGS(th)/ΔTJ|Gate Threshold Voltage Coefficient|–––|-10|–––|mV/°C||
|IDSS|Drain-to-Source Leakage Current|–––|–––|20|μA|VDS= 60V, VGS= 0V|
|||–––|–––|250||VDS= 48V, VGS= 0V, TJ= 125°C|
|IGSS|Gate-to-Source Forward Leakage|–––|–––|100|nA|VGS= 20V|
||Gate-to-Source Reverse Leakage|–––|–––|-100||VGS= -20V|
|gfs|Forward Transconductance|280|–––|–––|S|VDS= 10V, ID= 120A|
|Qg|Total Gate Charge|–––|200|300|nC|See Fig. 9<br>ID= 120A<br>VGS= 10V<br>VDS= 30V|
|Qgs1|Pre-Vth Gate-to-Source Charge|–––|36|–––|||
|Qgs2|Post-Vth Gate-to-Source Charge|–––|12|–––|||
|Qgd|Gate-to-Drain Charge|–––|71|110|||
|Qgodr|Gate Charge Overdrive|–––|100|–––|||
|Qsw|Switch Charge(Qgs2+ Qgd)|–––|83|–––|||
|Qoss|Output Charge|–––|67|–––|nC|VDS= 16V, VGS= 0V|
|RG|Gate Resistance|–––|1.1|–––|Ω||
|td(on)|Turn-On DelayTime|–––|17|–––|ns|RG=1.8Ω<br>VDD= 30V, VGS= 10V��<br>ID= 120A|
|tr|Rise Time|–––|43|–––|||
|td(off)|Turn-Off DelayTime|–––|78|–––|||
|tf|Fall Time|–––|39|–––|||
|Ciss|Input Capacitance|–––|12320|–––|pF|VDS= 25V<br>VGS= 0V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance|–––|1810|–––|||
|Crss|Reverse Transfer Capacitance|–––|850|–––|||
|Coss|Output Capacitance|–––|8060|–––||VGS= 0V, VDS= 1.0V, f=1.0MHz|
|Coss|Output Capacitance|–––|1310|–––||VGS= 0V, VDS= 120V, f=1.0MHz|



## **Diode Characteristics** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS|Continuous Source Current<br>(BodyDiode)|–––|–––|200|A|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.|
|ISM|Pulsed Source Current<br>(BodyDiode)��|–––|–––|800|||
|VSD|Diode Forward Voltage|–––|–––|1.3|V|TJ= 25°C, IS= 120A, VGS= 0V�|
|trr|Reverse RecoveryTime|–––|45|68|ns|TJ= 25°C, IF= 120A, VDD= 30V<br>di/dt = 100A/μs�|
|Qrr|Reverse RecoveryCharge|–––|78|120|nC||



## **������** 

> � Repetitive rating;  pulse width limited by max. junction temperature. 

> � Pulse width ≤ 400μs; duty cycle ≤ 2%. 

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## **Absolute Maximum Ratings** 

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Parameter Max. Units<br>PD @TC = 25°C Power Dissipation  125 W<br>©<br>PD @TC = 100°C Power Dissipation  63<br>©<br>PD @TA = 25°C Power Dissipation  3.3<br>©<br>TP  Peak Soldering Temperature 270 °C<br>TJ  Operating Junction and -55  to + 175<br>TSTG ee Storage Temperature Range es<br>Thermal Resistance<br>Parameter Typ. Max. Units<br>R θ JA  ©en Junction-to-Ambient  ––– 45<br>R θ JA  Junction-to-Ambient   12.5 –––<br>a<br>R θ JA  ©eC Junction-to-Ambient   20 ––– °C/W<br>R θ J-Can Junction-to-Can  ––– 1.2<br>a<br>R θ J-PCB  a Junction-to-PCB Mounted ––– 0.5<br>10<br>ee<br>1 PE er erFF<br>D = 0.50<br>ee ee es me ee eee eer<br>tzeS 0.20 0 ee ee Se oesOOOe OO OO<br>0.1 Se 0.10 eer<br>0.01 a—— 0.01 a 0.020.05  a esa> | eeeee τ J τ J τ 1 τ 1 R1R1 τ 2 τ R22R2 R τ 33R τ 33 τ R4 τ 4R4 4 IIE τ C τ Ri (0.10804         0.0001710.61403         0.0539140.45202         0.006099°C/W)    ei4  τ Cra i (sec)<br>Ci= τ i / Ri 0.00001         0.036168<br>a Ci i / Ri ee eee<br>0.001 SINGLE PULSE<br>Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>0.0001 enPE 2. Peak Tj = P dm x Zthjc + Tc Hy ll<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 3.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

Notes: @ Surface mounted on 1 in. square Cu board, steady state. @ Mounted on minimum footprint full size board with metalized @ TC measured with thermocouple incontact with top (Drain) of part. back and with small clip heatsink. Used double sided cooling, mounting pad with large heatsink. (0) R θ is measured at TJ of approximately 90°C. 

(6) Surface mounted on 1 in. square Cu board  (still air). 

©) Mounted on minimum footprint full size board with metalized back and with small clip heatsink. (still air) 

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1000<br>VGS<br>TOP           15V<br>10V<br>7.0V<br>100 5.0V<br>4.5V<br>S555 S=Sae-: 4.3V4.0V<br>BOTTOM 3.8V<br>PT LLL<br>10<br>≤  60μs PULSE WIDTH<br>1 Tj = 25°C<br>ee 3.8V eee<br>0.1 a= nheha ell<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Output Characteristics 

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1000 PT]<br>100<br>aPAM2//oe TJ = 175°C<br>TJ = 25 ° C<br>10 ae ese TJ = -40°C<br>1<br>py yyy VDS = 25V | |<br>≤  60μs PULSE WIDTH<br>0.1<br>anni<br>2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5<br>VGS, Gate-to-Source Voltage (V)<br>Fig 6.   Typical Transfer Characteristics<br>100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>Crss   = Cgd<br>C oss   = C ds  + C gd<br>=e<br>10000 Ciss<br>re<br>ag<br>Coss<br>STS<br>1000<br>| | Crss eH<br>PSE HSE EHH<br>a ee ee ee<br>Ere<br>100<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Typical Capacitance vs.Drain-to-Source Voltage 

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1000<br>VGS<br>TOP           15V<br>10V<br>7.0V<br>5.0V<br>4.5V<br>4.3V<br>Yor 4.0V<br>AY ||||_ [++] BOTTOM 3.8V<br>100<br>aA 3.8V mall<br>≤  60μs PULSE WIDTH<br>Tj = 175°C<br>ar ll<br>10<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Output Characteristics 

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2.0<br>ID = 120A<br>LY V GS  = 10V TLL<br>1.5<br>ya<br>LTTE LAE<br>1.0<br>ATT TTT<br>0.5 TEL EEE ELL<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>Fig 7.   Normalized On-Resistance vs. Temperature<br>14<br>ID= 120A<br>12 V DS = 48V<br>VDS= 30V<br>10 | || V DS = 12V Yr<br>|<br>8 | / py | |<br>6<br>pL Ux |<br>4<br>2/40<br>2 A} Tf<br>0 Vi | | | | dd<br>0 40 80 120 160 200 240 280<br> QG  Total Gate Charge (nC)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 7.** Normalized On-Resistance vs. Temperature 

**Fig 9.** Typical  Total Gate Charge vs Gate-to-Source Voltage 

May 6, 2014 

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10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000<br>100μsec<br>100<br>1msec<br>10 DC<br>10msec<br>1 RASA Tc = 25°C lle Ml<br>Tj = 175°C<br>0.1 Single Pulse Saices<br>0 1 10 100<br>VDS  , Drain-toSource Voltage (V)<br>Fig11.   Maximum Safe Operating Area<br>4.5<br>4.0 I D = 1.0A<br>LETT TTT ID = 1.0mA Ty<br>3.5 I D  = 250μA<br>ASSES<br>3.0<br>PSSA<br>2.5<br>CTR<br>2.0<br>HSA<br>1.5<br>SRRRRREENN<br>1.0<br>PEEP TTT iN<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>ID,  Drain-to-Source Current (A)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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1000<br>100<br>T = 175 ° C<br>J<br>T = 25°C<br>J<br>T = -40°C<br>10 J<br>= eS ———<br>V GS  = 0V<br>ty<br>1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 10.** Typical Source-Drain Diode Forward Voltage 

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200 4.5<br>4.0<br>160 NEEL<br>3.5<br>PSST<br>120<br>3.0<br>aE<br>2.5<br>80<br>LEE<br>2.0<br>40<br>SC LEEELEN<br>1.5<br>\<br>0 1.0<br>TA<br>25 50 75 100 125 150 175 -75<br>TC , CaseTemperature (°C)<br>Fig 12.   Maximum Drain Current vs. Case Temperature Fig 13.<br>1200<br>                 I<br>D<br>TOP          20A<br>1000<br>                31A<br>BOTTOM   120A<br>800<br>Rann<br>600<br>400<br>Nee<br>200<br>SNE<br>SS<br>0 |)<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>ID  , Drain Current (A)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 13.** Typical Threshold Voltage vs. Junction Temperature 

**Fig 14.** Maximum Avalanche Energy Vs. Drain Current 

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1000<br>Allowed avalanche Current vs avalanche<br>Duty Cycle = Single Pulse<br>PS pulsewidth, tav, assuming  Δ Tj = 150°C and  +H<br>Ur Tstart =25°C (Single Pulse) al<br>100<br>NESS 0.01<br>EY LTP NEQUE TT<br>10 Oe 0.05<br>0.10<br>ee Allowed avalanche Current vs avalanche   eee eee eee ee eel<br>1 : all<br>pulsewidth, tav, assuming ΔΤ j = 25°C and<br>Tstart = 150°C.<br>aeraOOO0 ee OO<br>0.1 eee ee ll<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


tav (sec) 

**Fig 15.** Typical Avalanche Current Vs.Pulsewidth 

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280<br>TOP          Single Pulse<br>240 BOTTOM   1% Duty Cycle<br>ID = 120A<br>200<br>INSTI<br>160 NEEL IN<br>120<br>N AN EEE<br>80 NI IN<br>PE INUEING ETT<br>PTT<br>40 NUNI  ENGN<br>ENE<br>0 NS IN<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

**Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)** 

1. Avalanche failures assumption: 

- Purely a thermal phenomenon and failure occurs at a 

- temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 19a, 19b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. Δ T = Allowable rise in junction temperature, not to exceed 

- Tjmax (assumed as 25°C in Figure 15, 16). 

- tav = Average time in avalanche. 

- D = Duty cycle in avalanche =  tav ·f 

- ZthJC(D, tav) = Transient thermal resistance, see figure 11) 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·ta** 

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D.U.T<br>+<br>) [©)]    •  Circuit Layout Considerations<br> •<br>| -  •   LowLow StrayLeakage Inductance inductance<br>+<br>® - a = Current Transformer - ® +<br>•<br>Re •   Driver. same type as D.U.T. AV/ +<br>(4 •   dildt controlled by Rg D D -<br>•<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>J Period D = P.W.<br>P.W. Period<br>| —_ ——. ) V | t GS=10V<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current Current ™=—<br>r di/dt /<br>©) D.U.T. VDS Waveform Diode Recovery<br>dv/dt<br>VDD<br>Re-Applied ms<br>Voltage Body Diode  Forward Drop<br>e s ee<br>Ripple  ≤ 5% ISD<br>® t<br>**----- End of picture text -----**<br>


for N-Channel HEXFET Power MOSFETs 

**Fig 17.** 

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Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>0<br>S Vgs(th)<br>201 K<br>Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>


**Fig 18a.** Gate Charge Test Circuit 

**Fig 18b.** Gate Charge Waveform 

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15V<br>L DRIVER<br>VDS<br>D.U.T +<br>- [V][DD]<br>IAS<br>y 20V Jt<br>t 0.01 Ω<br>p<br>**----- End of picture text -----**<br>


**Fig 19a.** Unclamped Inductive Test Circuit 

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+<br>-<br>≤ 1<br>≤ 0.1 % us<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>+ tp -><br>/<br>y |i<br>J 4<br>/ |<br>IAS<br>Fig 19b.   Unclamped Inductive Waveforms<br>V90%DS jf<br>X |<br>|<br>10% /\ |<br>/\__\<br>VGS<br>| | \<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 19b.** Unclamped Inductive Waveforms 

**Fig 20a.** Switching Time Test Circuit 

**Fig 20b.** Switching Time Waveforms 

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations 

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G = GATE<br>D = DRAIN<br>S = SOURCE<br>D D<br>S S<br>S S<br>D G D<br>S S<br>S S<br>D | D<br>**----- End of picture text -----**<br>


**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations 

|~~PO~~|~~PO~~|~~PO~~|~~PO~~|
|---|---|---|---|
|DIMENSIONS<br>~~PO~~||||
|METRIC<br>~~PO~~<br>~~ee~~<br>~~ee~~<br>~~aa~~<br>~~ee~~||IMPERIAL<br>~~PO~~||
|CODE<br>MIN<br>~~ee~~<br>~~aa~~<br>~~aa~~|MAX<br>~~ee~~<br>~~ee~~<br>~~ee~~|MIN|MAX|
|A<br>9.05<br>~~a a~~<br>~~aa~~<br>~~eeee~~|9.15<br>~~ee~~<br>~~ee~~<br>~~eeee~~|0.356<br>~~ee~~|0.360|
|B<br>6.85<br>~~a a~~<br>~~eeee~~<br>~~aa~~|7.10<br>~~ee~~<br>~~eeee~~<br>~~ee~~|0.270<br>~~ee~~|0.280|
|C<br>5.90<br>~~ee ee~~<br>~~aa~~<br>~~aa~~|6.00<br>~~ee ee ~~<br>~~ee~~<br>~~ee~~|0.232<br> ~~ee~~|0.236|
|D<br>0.55<br>~~a a~~<br>~~aa~~<br>~~eeee~~|0.65<br>~~ee~~<br>~~ee~~<br>~~eeee~~|0.022<br>~~ee~~|0.026|
|E<br>0.58<br>~~a a~~<br>~~eeee~~<br>~~aa~~|0.62<br>~~ee~~<br>~~eeee~~<br>~~ee~~|0.023<br>~~ee~~|0.024|
|1.18<br>~~ee ee~~<br>~~aa~~<br>~~aa~~|1.22<br>~~ee ee ~~<br>~~ee~~<br>~~ee~~|0.046<br> ~~ee~~|0.048|
|G<br>0.98<br>~~a a~~<br>~~aa~~<br>~~eeee~~|1.02<br>~~ee~~<br>~~ee~~<br>~~eeee~~|0.015<br>~~ee~~|0.017|
|H<br>0.73<br>~~a a~~<br>~~eeee~~<br>~~aa~~|0.77<br>~~ee~~<br>~~eeee~~<br>~~ee~~|0.029<br>~~ee~~|0.030|
|0.38<br>~~ee ee~~<br>~~aa~~<br>~~aa~~|0.42<br>~~ee ee ~~<br>~~ee~~<br>~~ee~~|0.015<br> ~~ee~~|0.017|
|K<br>1.34<br>~~a a~~<br>~~aa~~<br>~~eeee~~|1.47<br>~~ee~~<br>~~ee~~<br>~~eeee~~|0.053<br>~~ee~~|0.058|
|2.52<br>~~a a~~<br>~~eeee~~<br>~~aa~~|2.69<br>~~ee~~<br>~~eeee~~<br>~~ee~~|0.099<br>~~ee~~|0.106|
|M<br>0.59<br>~~ee ee~~<br>~~aa~~<br>~~aa~~|0.70<br>~~ee ee ~~<br>~~ee~~<br>~~ee~~|0.023<br> ~~ee~~|0.028|
|N<br>0.03<br>~~a a~~<br>~~aa~~|0.08<br>~~ee~~<br>~~ee~~|0.001|0.003|
|P<br>0.09<br>~~a a~~<br>~~Po~~|0.18<br>~~ee~~<br>~~Po~~|0.003<br>~~Po~~|0.007<br>~~Po~~|



## DirectFET 

## Part Marking 

## **GATE MARKING** 

## **LOGO** 

## **PART NUMBER** 

## **BATCH NUMBER** 

## **DATE CODE** 

Line above the last character of the date code indicates "Lead-Free" 

**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

## DirectFET ™ Tape & Reel Dimension (Showing component orientation). 

|**REEL DIMENSIONS**<br>NOTE: Controlling dimensions in mm Std reel<br>quantity is 4000 parts. (ordered as IRF7749L2PBF).<br>~~dh ~~pe|**REEL DIMENSIONS**<br>NOTE: Controlling dimensions in mm Std reel<br>quantity is 4000 parts. (ordered as IRF7749L2PBF).<br>~~dh ~~pe|**REEL DIMENSIONS**<br>NOTE: Controlling dimensions in mm Std reel<br>quantity is 4000 parts. (ordered as IRF7749L2PBF).<br>~~dh ~~pe|**REEL DIMENSIONS**<br>NOTE: Controlling dimensions in mm Std reel<br>quantity is 4000 parts. (ordered as IRF7749L2PBF).<br>~~dh ~~pe|**REEL DIMENSIONS**<br>NOTE: Controlling dimensions in mm Std reel<br>quantity is 4000 parts. (ordered as IRF7749L2PBF).<br>~~dh ~~pe|
|---|---|---|---|---|
|||||STANDARD OPTION**(QTY 4000)**<br>pe|
|||||MIN<br>330.0<br>20.2<br>12.8<br>1.5<br>100.0<br>N.C<br>16.4<br>15.9<br>CODE<br>A<br>B<br>C<br>D<br>E<br>F<br>G<br>H<br>MAX<br>N.C<br>N.C<br>13.2<br>N.C<br>N.C<br>22.4<br>18.4<br>18.4<br>MIN<br>12.992<br>0.795<br>0.504<br>0.059<br>3.937<br>N.C<br>0.646<br>0.626<br>MAX<br>N.C<br>N.C<br>0.520<br>N.C<br>N.C<br>0.889<br>0.724<br>0.724<br>METRIC<br>IMPERIAL<br>rs<br>eeeee<br>~~re ee ee eee~~<br>~~ee~~<br>~~eeee~~<br>~~ee~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~ee~~<br>~~ee eeee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~eeee~~<br>~~aeee~~|



NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. (ordered as IRF7749L2PBF). 

## LOADED TAPE FEED DIRECTION 

|DIMENSIONS<br>~~Pe~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|DIMENSIONS<br>~~Pe~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|DIMENSIONS<br>~~Pe~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|DIMENSIONS<br>~~Pe~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|DIMENSIONS<br>~~Pe~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|---|---|---|---|---|
|~~Pe~~<br>~~ee~~<br>~~a~~|METRIC<br>~~Pe~~<br>~~ee~~<br>~~eeee~~||IMPERIAL<br>~~Pe~~<br>~~ee~~<br>~~ee~~||
|CODE<br>~~ee~~<br>~~a~~<br>~~ee~~|MIN<br>~~ee~~<br>~~ee~~<br>~~ee~~|MAX<br>~~ee~~<br>~~eeee~~<br>~~ee~~<br>~~ee~~|MIN<br>~~ee~~<br>~~ee~~<br>~~ee~~|MAX<br>~~ee~~<br>~~ee~~<br>~~eeee~~|
|A<br>~~a~~<br>~~ee~~<br>~~es~~|11.90<br>~~ee~~<br>~~ee~~<br>~~ee~~|12.10<br>~~ee ee~~<br>~~ee~~<br>~~ee~~<br>~~eeee~~|0.469<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.476<br>~~ee~~<br>~~eeee~~<br>~~eeeee~~|
|B<br>~~ee~~<br>~~es~~<br>~~ee~~|3.90<br>~~ee~~<br>~~ee~~<br>~~ee~~|4.10<br>~~ee~~<br>~~ee ~~<br>~~eeee~~<br>~~ee~~<br>~~ee~~|0.154<br> ~~ee~~<br>~~ee~~<br>~~ee~~|0.161<br>~~ee ee~~<br>~~eeeee~~<br>~~eeee~~|
|C<br>~~es ~~<br>~~ee~~<br>~~es~~|15.90<br> ~~ee~~<br>~~ee~~<br>~~ee~~|16.30<br>~~ee ee~~<br>~~ee~~<br>~~ee~~<br>~~eeee~~|0.626<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.642<br>~~ee eee~~<br>~~eeee~~<br>~~eeeee~~|
|D<br>~~ee~~<br>~~es~~<br>~~ee~~|7.40<br>~~ee~~<br>~~ee~~<br>~~ee~~|7.60<br>~~ee~~<br>~~ee ~~<br>~~eeee~~<br>~~ee~~<br>~~ee~~|0.291<br> ~~ee~~<br>~~ee~~<br>~~ee~~|0.299<br>~~ee ee~~<br>~~eeeee~~<br>~~eeee~~|
|E<br>~~es ~~<br>~~ee~~<br>~~es~~|7.20<br> ~~ee~~<br>~~ee~~<br>~~ee~~|7.40<br>~~ee ee~~<br>~~ee~~<br>~~ee~~<br>~~eeee~~|0.284<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.291<br>~~ee eee~~<br>~~eeee~~<br>~~eeeee~~|
|F<br>~~ee~~<br>~~es~~<br>~~ee~~|9.90<br>~~ee~~<br>~~ee~~<br>~~ee~~|10.10<br>~~ee~~<br>~~ee ~~<br>~~eeee~~<br>~~ee~~<br>~~ee~~|0.390<br> ~~ee~~<br>~~ee~~<br>~~ee~~|0.398<br>~~ee ee~~<br>~~eeeee~~<br>~~eeee~~|
|G<br>~~es ~~<br>~~ee~~<br>~~ee~~|1.50<br> ~~ee~~<br>~~ee~~<br>~~ee~~|NC<br>~~ee ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.059<br>~~ee~~<br>~~ee~~<br>~~ee~~|NC<br>~~ee eee~~<br>~~eeee~~<br>~~eeee~~|
|H<br>~~ee~~<br>~~ee~~|1.50<br>~~ee~~<br>~~ee~~|1.60<br>~~ee~~<br>~~ee ~~<br>~~ee~~<br>~~ee~~|0.059<br> ~~ee~~<br>~~ee~~|0.063<br>~~ee ee~~<br>~~eeee~~|



**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

## **Qualification Information[†]** 

|**Qualification Information[†]**|||
|---|---|---|
|Qualification level|Industrial††||
||(per JEDEC JESD47F†††guidelines)||
||Comments: This family of products has passed JEDEC’s Industrial<br>qualification. IR’s Consumer qualification level is granted by extension of the<br>higher Industrial level.||
|Moisture Sensitivity Level|DFET2|MSL1<br>(perJEDEC J-STD-020D†††)|
|RoHS Compliant|Yes||



- T http://www.irf.com/product-info/reliability 

- ~~H~~ o 

Qualification standards can be found at International Rectifier’s web site 

- Higher qualification ratings may be available should the user have such requirements. 

- Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ 

- Ht Applicable version of JEDEC standard at the time of product release. 

|**Revision History**|**Revision History**|
|---|---|
|**Date**<br>**Revision History**|**Comments**<br>**Revision History**|
|5/6/2014|•Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option  (EOL notice #264).<br>•Updated data sheet based on corporate template.|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF7749L2TRPBF/power-mosfet-n-channel-60-v-375-a-00011-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irf7749l2trpbf/mosfet-n-ch-60v-375a-directfet/dp/2803415)
---

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