# Power MOSFET, N Channel, 60 V, 345 A, 1500 µohm, DirectFET L8, Surface Mount
**URL**: https://novapart.co/products/IRF7749L1TRPBF/power-mosfet-n-channel-60-v-345-a-1500-ohm
**SKU**: IRF7749L1TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.2800
**Stock**: 1000+
**Lead Time**: 134 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:375A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 15Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 341W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DirectFET L8 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 345A |
| Drain Source On State Resistance | 1500µohm |
| Gate Source Threshold Voltage Max | 4V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2725913RL/)
**IRF7749L1TRPbF**
## **IR MOSFET-DirectFET™**
## **IRF7749L1TRPbF**
## **Quality Requirement Category: Industrial**
## **Applications**
DirectFET™ N-Channel Power MOSFET
|**VDSS**|**60V**|
|---|---|
|**RDS(on)typ.**
**@ VGS =10V**|**1.1m**|
|**RDS(on) max**
**@ VGS = 10V**|**1.5m**|
|**ID (Silicon Limited)**|**345A**|
|**ID (Package Limited)**|**375A**|
- RoHS Compliant, Halogen Free
- Lead-Free (Qualified up to 260°C Reflow)
- Ideal for High Performance Isolated Converter Primary Switch Socket
- Optimized for Synchronous Rectification
- Low Conduction Losses
- High Cdv/dt Immunity
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**----- Start of picture text -----**
S S
S S
D G S S D
S S
DirectFET ™ ISOMETRIC
L8
**----- End of picture text -----**
- Low Profile (<0.7mm)
- Dual Sided Cooling Compatible
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**----- Start of picture text -----**
Compatible with existing Surface Mount Techniques
G D S
Gate Drain Source
—
Standard Pack
Base part number Package Type Orderable Part Number
Form Quantity
es IRF7749L1TRPbF DirectFET™ Large Can (LA) Tape and Reel ee 4000 IRF7749L1TRPbF
8.0 8
T = 25°C
I = 120A J
D
6.0 6 Vgs = 5.5V
qi lL i/
Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
4.0 4
Vgs = 10V
roth) cb Vgs = 12V Ne
T = 125°C
J
2.0 2
T = 25°C
J
JOT
0.0 0
A } EET
4 6 8 10 12 14 16 18 20 0 40 80 120 160 200
VGS, Gate-to-Source Voltage (V) ID, Drain Current (A)
)
Typical RDS(on) (m
)
RDS(on), Drain-to -Source On Resistance (m
**----- End of picture text -----**
**Figure 1 Typical On-Resistance vs. Gate Voltage**
**Figure 2 Typical On-Resistance vs. Drain Current**
Final Datasheet Please read the important Notice and Warnings at the end of this document V2.2 **www.infineon.com** 2019-02-20
2019-02-20
**IR MOSFET-DirectFET™**
**IRF7749L1TRPbF**
**Table of Contents**
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## **Table of Contents**
|**Applications**
**…..………………………………………………………………………...……………..……………1**|
|---|
|**Ordering Table ….……………………………………………………………………………………………………1**|
|**Table of Contents ….………………………………………………………………………………………………...2**|
|**1**
**Parameters ………………………………………………………………………………………………3**|
|**2**
**Maximum ratings, Thermal, and Avalanche characteristics ………………………………………4**|
|**3**
**Electrical characteristics ………………………………………………………………………………5**|
|**4**
**Electrical characteristic diagrams ……………………………………………………………………6**|
|**Package Information ………………………………………………………………………………………………14**|
|**Qualification Information ……………………………………………………………………………………………16**|
|**Revision History …………………………………………………………………………………………..…………17**|
Final Datasheet
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**IR MOSFET-DirectFET™**
**IRF7749L1TRPbF**
**Parameters**
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## **1 Parameters**
**Table1 Key performance parameters**
|**Parameter**|**Values**|**Units**|
|---|---|---|
|VDS|60|V|
|RDS(on) max|1.5|m|
|ID@ TC|345|A|
|ID@ TA|36|A|
Final Datasheet
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**IR MOSFET-DirectFET™**
**IRF7749L1TRPbF**
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## **Maximum ratings and thermal characteristics**
## **2 Maximum ratings and thermal characteristics**
**Table 2 Maximum ratings (at TJ=25** ° **C, unless otherwise specified)**
|**Parameter**|**Symbol**|**Conditions**|**Values**|**Unit**|
|---|---|---|---|---|
|Continuous Drain Current(Silicon Limited) |ID|TC= 25°C,VGS @10V|345|A|
|Continuous Drain Current(Silicon Limited) |ID|TC= 100°C,VGS@ 10V|243||
|Continuous Drain Current(Silicon Limited) |ID|TA= 25°C,VGS @10V|36||
|Continuous Drain Current(Package Limited) |ID|TC= 25°C,VGS @10V|375||
|Pulsed Drain Current|IDM|TC= 25°C|1380||
|Maximum Power Dissipation|PD|TC= 25°C|341|W|
|Maximum Power Dissipation|PD|TA= 25°C|3.8||
|Linear DeratingFactor|-|-|0.025|W/°C|
|Gate-to-Source Voltage|VGS|-|± 20|V|
|Operating Junction|TJ|-|-55 to + 175|°C|
|Storage Temperature Range|TSTG|-|||
**Table 3 Thermal characteristics**
|**Parameter**|**Symbol**|**Conditions**|**Min.**|**Typ. **|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Junction-to-Ambient|RJA|-|-|-|40|°C/W|
|Junction-to-Ambient|RJA|-|-|12.5|-||
|Junction-to-Ambient|RJA|-|-|20|-||
|Junction-to-Case |RJC|-|-|-|0.44||
|Junction-to-PCB Mounted|RJA-PCB|-|-|-|0.5||
**Table 4 Avalanche characteristics**
|**Table 4 Avalanche characteristics**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|**Unit**|
|Single Pulse Avalanche Energy (ThermallyLimited|EAS|315|mJ|
|Single Pulse Avalanche Energy (Tested) |EAS|714||
|Avalanche Current|IAR|See Fig.15,16, 19a, 19b|A|
|Repetitive Avalanche Energy |EAR||mJ|
## **Notes:**
- _Package limit current based on source connection technology_
- _Repetitive rating; pulse width limited by max. junction temperature._
- _Limited by TJmax, starting TJ = 25°C, L = 0.044mH, RG = 50_ _, IAS = 120A, VGS =10V._
- _Pulse width ≤ 400µs; duty cycle ≤ 2%._
- _Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS._
- _R_ _is measured at TJ approximately 90°C._
- _Silicon limit current based on maximum allowable junction temperature TJmax._
Final Datasheet
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**IR MOSFET-DirectFET™**
**IRF7749L1TRPbF**
**Electrical characteristics**
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## **3 Electrical characteristics**
## **Table 5 Static characteristics**
|**Table 5 Static characteristics**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Values**|||**Unit**|
||||**Min.**|**Typ.**|**Max.**||
|Drain-to-Source Breakdown Voltage
|V(BR)DSS|VGS= 0V,ID= 250µA|60|-|-|V|
|Breakdown Voltage Temp. Coeficient|V(BR)DSS/TJ|Reference to 25°C,ID= 3.0mA|-|56|-|mV/°C|
|Static Drain-to-Source On-Resistance|RDS(on)|VGS= 10V,ID= 120A|-|1.1|1.5|m|
|Gate Threshold Voltage|VGS(th)|VDS= VGS, ID= 250µA|2.0|-|4.0|V|
|Gate Threshold Voltage Coefficient|VGS(th)/TJ||-|8.8|-|mV/°C|
|Drain-to-Source Leakage Current|IDSS|VDS= 60V, VGS= 0V|-|-|20|µA|
|||VDS= 60V,VGS= 0V,TJ= 125°C|-|-|250||
|Gate-to-Source Forward Leakage|IGSS|VGS= 20V|-|-|100|nA|
||IGSS|VGS= -20V|-|-|100||
|Gate Resistance|RG|-|-|1.5|-||
**Table 6 Dynamic characteristics**
|**Parameter**|**Symbol**|**Conditions**|**Values**|**Values**|**Values**|**Unit**|
|---|---|---|---|---|---|---|
||||**Min.**|**Typ. **|**Max.**||
|Forward Trans conductance|gfs|VDS= 10V, ID= 120A|185|-|-|S|
|Total Gate Charge|Qg|ID= 120A
VDS= 30V
VGS= 10V|-|183|275|nC|
|Gate-to-Source Charge|Qgs1||-|39|-||
|Gate-to-Source Charge|Qgs2|||19|||
|Gate-to-Drain(“Miller)Charge|Qgd||-|46|-||
|Gate Charge Overdrive|Qgodr||-|79|-||
|Switch Charge(Qgs2 +Qgd)|Qsw||-|65|-||
|Output Charge|Qoss|VDS= 48V,VGS= 0V|-|119|-|nC|
|Turn-On DelayTime|td(on)|VDD= 30V
ID= 120A
RG= 1.8
VGS= 10V|-|29|-|ns|
|Rise Time|tr||-|149|-||
|Turn-Of DelayTime|td(of)||-|72|-||
|Fall Time|tf||-|88|-||
|Input Capacitance|Ciss|VGS= 0V
VDS= 25V
ƒ = 1.0MHz|-|10655|-|pF|
|Output Capacitance|Coss||-|1627|-||
|Reverse Transfer Capacitance|Crss||-|680|-||
|Efective Output Capacitance|Cossef.|VGS= 0V, VDS= 0V to 48V|-|1959|-||
**Table 7 Reverse Diode**
|**Table 7 Reverse Diode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Values**|||**Unit**|
||||**Min.**|**Typ.**|**Max.**||
|Continuous Source Current
(BodyDiode)|IS|D
S
G
MOSFET symbol
showing the
integral reverse
p-njunction diode.|-|-|345|A|
|Pulsed Source Current
(BodyDiode) |ISM||-|-|1380||
|Diode Forward Voltage|VSD|TJ= 25°C, IS= 120A,VGS= 0V|-|-|1.3|V|
|Reverse RecoveryTime|trr|TJ= 25°C ,IF= 120A,
VDD= 30V,di/dt = 100A/µs|-|42|-|ns|
|Reverse RecoveryCharge|Qrr||-|54|-|nC|
Final Datasheet
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**IR MOSFET-DirectFET™**
**IRF7749L1TRPbF**
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## **Electrical characteristic diagrams**
## **4 Electrical characteristic diagrams**
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10000 10000
VGS
VGS
TOP 15V TOP 15V
10V
10V
8.0V 8.0V
1000 7.0V 7.0V
6.0V
6.0V
1000 5.5V
5.5V
5.0V
5.0V
BOTTOM 4.5V BOTTOM 4.5V
100
100
4.5V
10 4.5V
60µs PULSE WIDTH 60µs PULSE WIDTH
Tj = 25°C Tj = 175°C
1 10
0.1 1 10 100 0.1 1 10 100
VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)
Figure 3 Typical Output Characteristics Figure 4 Typical Output Characteristics
10000 2.0
VDS = 25V ID = 120A
1.8
60µs PULSE WIDTH VGS = 10V
1000
1.6
100
1.4
T = 25°C
J
10 TJ = 175 ° C 1.2
1.0
1
0.8
0.1 0.6
2.0 3.0 4.0 5.0 6.0 7.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)
ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
RDS(on) , Drain-to-Source On Resistance (Normalized)
**----- End of picture text -----**
**Figure 5 Typical Transfer Characteristics**
**Figure 6 Normalized On-Resistance vs. Temperature**
Final Datasheet
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**IR MOSFET-DirectFET™**
**IRF7749L1TRPbF**
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## **Electrical characteristic diagrams**
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**----- Start of picture text -----**
100000 16
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED I D = 120A
C = C
rss gd
Coss = Cds + Cgd 12 VDS= 48V
10000 C iss VDS= 30V
Coss VDS= 12V
8
C
rss
1000
4
0
100
0.1 1 10 100 0 40 80 120 160 200 240
VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC)
C, Capacitance (pF)
VGS, Gate-to-Source Voltage (V)
**----- End of picture text -----**
**Figure 7 Typical Capacitance vs. Drain-to-Source Voltage**
**Figure 8 Typical Gate Charge vs. Gate-to-Source Voltage**
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10000
1000
1000 100µsec
TJ = 175°C 100
100
OPERATION IN THIS AREA 1msec
LIMITED BY R DS (on)
TJ = 25°C 10
10
10msec
1 1 Tc = 25°C
V = 0V Tj = 175°C DC
GS Single Pulse
0.1
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.1 1 10
VSD, Source-to-Drain Voltage (V)
VDS, Drain-toSource Voltage (V)
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
**----- End of picture text -----**
**Figure 9 Typical Source-Drain Diode Forward Voltage**
**Figure 10 Maximum Safe Operating Area**
Final Datasheet
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**IR MOSFET-DirectFET™**
**IRF7749L1TRPbF**
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## **Electrical characteristic diagrams**
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**----- Start of picture text -----**
350 4.5
300 4.0
250
3.5
200
3.0
150
ID = 250µA
2.5
I = 1.0mA
100 D
I = 1.0A
D
2.0
50
0 1.5
25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175
TC , CaseTemperature (°C) TJ , Temperature ( °C )
ID , Drain Current (A)
VGS(th) Gate threshold Voltage (V)
**----- End of picture text -----**
**Figure 11 Maximum Drain Current vs. Case Temperature**
**Figure 12 Typical Threshold Voltage vs. Junction**
**Temperature**
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**----- Start of picture text -----**
1400
I
D
1200
TOP 15A
35A
1000 BOTTOM 120A
800
600
400
200
0
25 50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
EAS, Single Pulse Avalanche Energy (mJ)
**----- End of picture text -----**
**Figure 13 Maximum Avalanche Energy vs. Temperature**
Final Datasheet
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**IR MOSFET-DirectFET™**
**IRF7749L1TRPbF**
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## **Electrical characteristic diagrams**
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**----- Start of picture text -----**
1
D = 0.50
0.1 0.20
0.10
0.05
0.01 0.02
0.01
SINGLE PULSE
0.001 ( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Thermal Response ( Z thJC ) °C/W
**----- End of picture text -----**
**Figure 14 Maximum Effective Transient Thermal Impedance, Junction-to-Case**
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1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C. (Single Pulse)
1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Avalanche Current (A)
**----- End of picture text -----**
**Figure 15 Typical Avalanche Current vs. Pulse Width**
Final Datasheet
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**IR MOSFET-DirectFET™**
**IRF7749L1TRPbF**
## **Electrical characteristic diagrams**
## **Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.infineon.com)**
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**----- Start of picture text -----**
350
TOP Single Pulse
300 TiC BOTTOM 1.0% Duty Cycle
ID = 120A
250
NTL
200
ANTE
150
PLNNUTETTE
100
TT ENN TT
50 TLLLEE LLEENANG E ANNIE
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
EAR , Avalanche Energy (mJ)
**----- End of picture text -----**
- 1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 19a, 19b.
4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. DT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15).
- tav = Average time in avalanche.
- D = Duty cycle in avalanche = tav ·f
- ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
- Iav = 2 T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
**Figure 16 Maximum Avalanche Energy vs. Temperature**
## **Notes:**
Used double sided cooling , mounting pad with large heatsink TC measured with thermocouple mounted to top (Drain) of part.
Mounted on minimum footprint full size board with metalized back and with small clip heatsink.
Surface mounted on 1 in. square Cu Mounted to a PCB with small clip Mounted on minimum footprint full size board board (still air). heatsink (still air). with metalized back and with small clip heatsink (still air)
Final Datasheet
V2.2
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**IRF7749L1TRPbF**
## **IR MOSFET-DirectFET™**
## **Electrical characteristic diagrams**
**Figure 17 Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET™ Power MOSFETs**
## **Figure 18a Gate Charge Test Circuit**
**Figure 18b Gate Charge Waveform**
Final Datasheet
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**IR MOSFET-DirectFET™**
**IRF7749L1TRPbF**
## **Electrical characteristic diagrams**
**Figure 19a Unclamped Inductive Test Circuit**
**Figure 20a Switching Time Test Circuit**
**Figure 19b Unclamped Inductive Waveforms**
**Figure 20b Switching Time Waveforms**
Final Datasheet
12 V2.2 2019-02-20
**IR MOSFET-DirectFET™**
**IRF7749L1TRPbF Package Information**
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## **5 Package Information**
## **DirectFET™ Board Footprint, L8 Outline (Large Size Can, 8-Source Pads)**
Please see DirectFET™ application note AN-1035 for all details regarding the assembly of DirectFET™. This includes all recommendations for stencil and substrate designs.
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**==> picture [404 x 258] intentionally omitted <==**
**----- Start of picture text -----**
G = GATE
D = DRAIN
S = SOURCE
D D
S S
S S
D G D
S S
S S
D D
**----- End of picture text -----**
13
Final Datasheet
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**IR MOSFET-DirectFET™**
**IRF7749L1TRPbF**
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## **Package Information**
## **DirectFET™ Outline Dimension, L8 Outline (Large Size Can, 8-Source Pads)**
Please see DirectFET™ application note AN-1035 for all details regarding the assembly of DirectFET™. This includes all recommendations for stencil and substrate designs.
**==> picture [537 x 313] intentionally omitted <==**
**----- Start of picture text -----**
DIMENSIONS
METRIC IMPERIAL
CODE MIN MAX MIN MAX
A 9.05 9.15 0.356 0.360
B 6.85 7.10 0.270 0.280
C 5.90 6.00 0.232 0.236
D 0.55 0.65 0.022 0.026
E 0.58 0.62 0.023 0.024
F 1.18 1.22 0.046 0.048
G 0.98 1.02 0.039 0.040
H 0.73 0.77 0.029 0.030
J 0.38 0.42 0.015 0.017
K 1.35 1.45 0.053 0.057
L 2.55 2.65 0.100 0.104
L1 5.35 5.45 0.211 0.215
M 0.68 0.74 0.027 0.029
P 0.09 0.17 0.003 0.007
R 0.02 0.08 0.001 0.003
**----- End of picture text -----**
## **DirectFET[TM ] Part Marking**
## GATE MARKING
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**----- Start of picture text -----**
+
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LOGO
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**----- Start of picture text -----**
PART NUMBER
**----- End of picture text -----**
## BATCH NUMBER
## DATE CODE
Line above the last character of the date code indicates "Lead-Free"
Final Datasheet
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14 2019-02-20
**IR MOSFET-DirectFET™**
**IRF7749L1TRPbF**
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## **Tape & Reel Information**
## **DirectFET[TM ] Tape & Reel Dimension (Showing component orientation).**
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NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. (ordered as IRF7749L1TRPBF).
||**REEL DIMENSIONS**|**REEL DIMENSIONS**|**REEL DIMENSIONS**||
|---|---|---|---|---|
|STANDARD OPTION|||**(QTY 4000)**||
||METRIC||IMPERIAL||
|CODE|MIN|MAX|MIN|MAX|
|A|330.00|N.C|12.992|N.C|
|B|20.20|N.C|0.795|N.C|
|C|12.80|13.20|0.504|0.520|
|D|1.50|N.C|0.059|N.C|
|E|99.00|100.00|3.900|3.940|
|F|N.C|22.40|N.C|0.880|
|G|16.40|18.40|0.650|0.720|
|H|15.90|19.40|0.630|0.760|
## LOADED TAPE FEED DIRECTION
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**----- Start of picture text -----**
+
**----- End of picture text -----**
|NOTE: CONTROLLING
DIMENSIONS IN MM|DIMENSIONS|DIMENSIONS|DIMENSIONS|DIMENSIONS|DIMENSIONS|
|---|---|---|---|---|---|
|||METRIC||IMPERIAL||
||CODE|MI|MAX
N|MIN|MAX|
||A|11.9|12.10
0|4.69|0.476|
||B|3.9|4.10
0|0.154|0.161|
||C|15.9|16.30
0|0.623|0.642|
||D|7.4|7.60
0|0.291|0.299|
||E|7.2|7.40
0|0.283|0.291|
||F|9.9|10.10
0|0.390|0.398|
||G|1.5|N.C
0|0.059|N.C|
||H|1.5|1.60
0|0.059|0.063|
Final Datasheet
15
V2.2
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**IR MOSFET-DirectFET™**
**IRF7749L1TRPbF Qualification Information**
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## **6 Qualification Information**
## **Qualification Information**
|**Qualification Information**|||
|---|---|---|
|**Qualification Level**|Industrial
(per JEDEC JESD47F)†||
|**Moisture Sensitivity Level**|DirectFET™ Large Can|MSL1
(per JEDEC J-STD-020D)†|
|**RoHS Compliant**|Yes||
- Applicable version of JEDEC standard at the time of product release.
Final Datasheet
16 V2.2 2019-02-20
**IR MOSFET-DirectFET™**
**IRF7749L1TRPbF Revision History**
**==> picture [101 x 46] intentionally omitted <==**
## **Revision History**
## **Major changes since the last revision**
|**Page or Reference**|**Revision**|**Date**|**Description of changes**|
|---|---|---|---|
|All pages|2.0|2013-01-07|
First release Final data sheet.|
|All pages|2.1|2013-02-13|
TR1 option removed and Tape & Reel Info updated accordingly.
Hyperlinks added throw-out the document|
|All pages|2.2|2019-02-20|
Update to R-Theta.|
Final Datasheet
17 V2.2 2019-02-20
**IR MOSFET-DirectFET™**
**IRF7749L1TRPbF**
**==> picture [101 x 46] intentionally omitted <==**
## **Trademarks of Infineon Technologies AG**
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
## **Other Trademarks**
All referenced product or service names and trademarks are the property of their respective owners.
## **IMPORTANT NOTICE**
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office **(www.infineon.com).**
**Edition 2015-05-06** The information given in this document shall in no delivery terms and conditions and prices please **Published by** event be regarded as a guarantee of conditions or contact your nearest Infineon Technologies office **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”) . **(www.infineon.com). 81726 Munich, Germany** With respect to any examples, hints or any typical **© 2016 Infineon Technologies AG.** values stated herein and/or any information regarding the application of the product, Infineon **WARNINGS All Rights Reserved.** Technologies hereby disclaims any and all Due to technical requirements products may contain warranties and liabilities of any kind, including dangerous substances. For information on the types **Do you have a question about this document?** without limitation warranties of non-infringement of intellectual property rights of any third party. in question please contact your nearest Infineon Technologies office. **Email: erratum@infineon.com** In addition, any information given in this document Except as otherwise explicitly approved by Infineon **Document reference** is subject to customer’s compliance with its obligations stated in this document and any Technologies in a written document signed by authorized representatives of Infineon Technologies, applicable legal requirements, norms and standards Infineon Technologies’ products may not be used in concerning customer’s products and any use of the any applications where a failure of the product or product of Infineon Technologies in customer’s any consequences of the use thereof can reasonably applications. be expected to result in personal injury.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with 18 V2.2
Final Datasheet
2019-02-20
## Links
- [View this product on Novapart](https://novapart.co/products/IRF7749L1TRPBF/power-mosfet-n-channel-60-v-345-a-1500-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf7749l1trpbf/mosfet-n-ch-60v-345a-directfet/dp/2725913RL)
---
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