# Power MOSFET, P Channel, 30 V, 7 A, 0.026 ohm, µSOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2577157/)

**URL**: https://novapart.co/products/IRF7726TRPBF/power-mosfet-p-channel-30-v-7-a-0026-ohm-soic
**SKU**: IRF7726TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6180
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.026ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (08-Jul-2021) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 1.79W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | µSOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 7A |
| Drain Source On State Resistance | 0.026ohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2577157/)

PD -95992 

## IRF7726PbF 

Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Lead-Free 

## HEXFET[®] Power MOSFET 

|**VDSS**|**RDS(on) max**|**ID**|
|---|---|---|
|**-30V**|0.026@VGS= -10V|-7.0A|
||0.040@VGS= -4.5V|-6.0A|



## **Description** 

HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for  battery and load management. 

The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium.  The low profile (<1.2mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. 

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A<br>S 1 8 D<br>S 2 7 D<br>S 3 6 D<br>G 4 5 D<br>Top View MICRO-8<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

a **Parameter Max. Units** VDS Drain-Source Voltage -30 V ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -7.0 ~~a~~ ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -5.7 A ~~©~~ IDM Pulsed Drain Current -28 ~~a~~ PD @TA = 25°C Maximum Power Dissipation 1.79 W ~~a~~ PD @TA = 70°C Maximum Power Dissipation 1.14 W Linear Deratin ~~a~~ g Factor                                                                     0.01                               W/°C VGS                                      Gate-to-Source Voltage ±20                                   V TJ , TSTG Junction and Storage Temperature Range -55 to +150 °C ~~Sg~~ 

**Thermal Resistance Parameter Max. Units** ——— RθJA Maximum Junction-to-Ambient 70 °C/W www.irf.com 1 02/22/05 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|||~~Od~~|~~rs rs~~|~~rs~~|||
|---|---|---|---|---|---|---|
||**Parameter**<br>rs|**Min. **<br>rs<br>~~Od~~<br>~~Ors~~|**Typ. **<br>rs<br>~~rs rs~~<br>~~GG~~|**Max.**<br>rs<br>~~rs~~<br>~~GG~~|**Units**<br>rs<br>~~GG~~|**Conditions**<br>rs|
|V(BR)DSS<br>~~Bo~~|Drain-to-Source Breakdown Voltage<br>~~rs~~<br>~~Bo~~|-30<br>~~Od ~~<br>~~rs~~<br>~~Ors~~<br>rs|–––<br> ~~rs rs~~<br>~~rs~~<br>~~GG~~<br>rs|–––<br>~~rs~~<br>~~rs~~<br>~~GG~~<br>rs|V<br>~~rs~~<br>~~GG~~<br>Ge|VGS= 0V, ID= -250µA<br>~~rs~~|
|∆V(BR)DSS/∆TJ<br>~~Bo~~|Breakdown Voltage Temp. Coefficient<br>~~rs~~<br>~~Bo~~|––– <br>~~Ors~~<br>~~rs~~<br>rs<br>~~REY~~|0.016<br>~~GG~~<br>~~rs~~<br>rs<br>~~REY~~|–––<br>~~GG~~<br>~~rs~~<br>rs<br>~~REY~~|V/°C<br>~~GG~~<br>~~rs~~<br>Ge<br>|Reference to 25°C, ID= -1mA<br>~~rs~~<br>~~RK~~|
|RDS(on)<br>~~Bo~~|Static Drain-to-Source On-Resistance<br>~~Bo~~|–––<br>rs<br>~~REY~~|––– <br>rs<br>~~REY~~<br>||0.026<br>rs<br>~~REY~~<br>|||Ω<br>Ge<br><br>|<br>~~ss~~|VGS= -10V, ID= -7.0A<br>~~RK~~|
|||rs<br>~~REY~~<br>I—|<br>~~Gs~~|––– <br>rs<br>~~REY~~<br>I—|<br>|<br>~~rr~~|0.040<br>rs<br>~~REY~~<br>I—|<br>||<br>~~ss~~||VGS= -4.5V, ID= -6.0A<br>~~RK~~|
|VGS(th)<br>~~Bo~~<br>~~Se~~|Gate Threshold Voltage<br>~~Bo~~<br>~~rs~~<br>~~Se~~|-1.0<br>rs <br>~~REY~~<br>~~rs~~<br>~~Gs~~<br>~~Gre~~|–––<br> rs<br>~~REY~~<br>|<br>~~rs~~<br>~~rr~~<br>~~Gr~~|-2.5<br>rs<br>~~REY ~~<br>| |<br>~~rs~~<br>~~ss~~|V<br>Ge<br> <br>|<br>~~rs~~<br>~~ss~~|VDS= VGS, ID= -250µA<br> ~~RK~~<br>~~rs~~|
|gfs<br>~~Se~~|Forward Transconductance<br>~~rs~~<br>~~Se~~|10<br>~~Gs ~~<br>~~rs~~<br>~~Gre~~|–––<br> ~~rr ~~<br>~~rs~~<br>~~Gr~~|–––<br> ~~ss~~<br>~~rs~~|S<br>~~ss~~<br>~~rs~~|VDS= -10V, ID= -7.0A<br>~~rs~~|
|IDSS<br>~~Se~~|Drain-to-Source Leakage Current<br>~~Se~~|–––<br>~~Gre~~|–––<br>~~Gr~~|-15|~~a~~|VDS= -24V, VGS= 0V|
|||–––<br>~~Gre~~<br>~~a~~|–––<br>~~Gr~~<br>~~a~~|-25<br>~~a~~||VDS= -24V, VGS= 0V, TJ= 70°C<br>~~a~~|
|~~Se~~|Gate-to-Source Forward Leakage<br>~~Se~~<br>~~a~~<br>~~ee~~|–––<br>~~Gre~~<br>~~a~~<br>~~ee~~|–––<br>~~Gr~~<br>~~a~~|-100<br>~~a~~|eg<br>~~PO~~|VGS= -20V<br>~~PO~~|
||Gate-to-Source Reverse Leakage<br>~~a~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~|–––<br>~~a~~|100<br>~~a~~||VGS= 20V<br>~~PO~~|
|Qg|Total Gate Charge<br> <br>~~i~~|–––<br> ~~ee~~<br>~~i~~<br>ee|46<br>~~i~~|69<br>~~i~~|nC<br>~~PO~~|ID= -7.0A<br>VDS= -15V<br>VGS= -10V<br>~~PO~~|
|Qgs|Gate-to-Source Charge<br>~~i~~<br>~~ee~~|–––<br>~~i~~<br>~~ee~~<br>ee|8.0<br>~~i~~<br>~~ee~~|–––<br>~~i~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––<br>ee<br>~~ee~~<br>ee|8.1<br>~~ee~~|–––<br>~~ee~~|||
|td(on)|Turn-On Delay Time<br>~~es~~|–––<br>~~es~~<br>ee<br>ee|15<br>~~es~~|23||VDD= -15V, VGS= -10V<br>ID= -1.0A<br>RG= 6.0Ω<br>RD= 15Ω<br>~~@~~|
|tr|Rise Time<br>~~ee~~<br>~~ee~~|–––<br>ee<br>~~ee~~<br>ee<br>~~e~~~~**e**~~<br>|25<br>~~ee~~|38|||
|td(off)|Turn-Off Delay Time<br>~~ee~~<br>~~ee~~|–––<br>ee<br>~~ee~~<br>~~e~~~~**e**~~<br>~~e~~|227<br>~~ee~~|341|||
|tf|Fall Time<br>~~ee~~|–––<br>~~e~~~~**e**~~<br>~~e~~<br>ee|107|161|||
|Ciss|Input Capacitance<br>~~ee ~~<br>~~ee~~|–––<br>~~e~~~~**e**~~<br> ~~e~~<br>~~ee~~<br>ee<br>ee|2204<br>~~ee~~|–––|pF|VGS= 0V<br>VDS= -25V<br>ƒ = 1.0MHz<br>~~@~~|
|Coss|Output Capacitance<br>~~ee~~|–––<br>ee<br>~~ee~~<br>ee|341<br>~~ee~~|–––|||
|Crss|Reverse Transfer Capacitance|–––<br>ee|220|–––|||



## **Source-Drain Ratings and Characteristics** 

|~~ee~~|**Parameter**<br>~~ss~~|**Min. **<br>~~ss~~|**Typ. **|**Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS<br>~~ee~~|Continuous Source Current<br>(Body Diode)<br>~~ss~~|~~ss~~||-1.8|~~es~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>S<br>D<br>G<br>~~es~~|
|ISM<br>~~Rses~~<br>~~$$~~|Pulsed Source Current<br>(BodyDiode)<br>~~es~~<br>~~$$~~|~~es~~<br>~~ss~~|~~es~~<br>~~ss~~|-28<br>~~es~~|||
|VSD<br>~~Rses~~<br>~~$$~~<br>~~a~~|Diode Forward Voltage<br>~~es~~<br>~~$$~~<br>~~ttt~~|–––<br>~~es~~<br>~~ss~~<br>~~ttt~~|–––<br>~~es~~<br>~~ss~~<br>~~ttt~~|-1.2<br>~~es~~<br>~~ttt~~|V<br>~~es~~|TJ= 25°C, IS= -1.8A, VGS= 0V<br>~~es~~<br>~~lis~~|
|trr<br>~~Rses~~<br>~~$$~~<br>~~a~~|Reverse Recovery Time<br>~~es~~<br>~~$$~~<br>~~ttt~~<br>~~es~~|–––<br>~~es~~<br>~~ss~~<br>~~ttt~~<br>ee|35<br>~~es~~<br>~~ss~~<br>~~ttt~~<br>ee|53<br>~~es~~<br>~~ttt~~|ns<br>~~es~~|TJ= 25°C, IF= -1.8A<br>di/dt = -100A/µs<br>~~es~~<br>~~lis~~<br>@|
|Qrr<br>~~$$~~<br>~~a~~|Reverse Recovery Charge<br>~~$$~~<br>~~ttt~~<br>~~es~~|–––<br>~~ss~~<br>~~ttt~~<br>ee|32<br>~~ss~~<br>~~ttt~~<br>ee|48<br>~~ttt~~|µC||



@ Repetitive rating; pulse width limited by max. junction temperature. 

When mounted on 1 inch square copper board,  t < 10 sec. 

Pulse width ≤ 400µs duty cycle ≤ 

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100 100<br>VGS VGS<br>TOP          -10.0V TOP          -10.0V<br>                  -4.5V                   -4.5V<br>ap st een                   -3.7V EHH                   -3.7V |<br>10 40 Se eeean                   -3.5V                  -3.3V                  -3.0V                  -2.7V | 10 cae aml                   -3.5V                  -3.3V                  -2.7V-3.0V<br>BOTTOM   -2.5V BOTTOM   -2.5V<br>L SA if<br>1 tt | Y Zaioetesesss ean<br>-2.5V -2.5V<br>1<br>AO et t 2740)<br>0.1<br>Ellie 20µs PULSE WIDTH CT 20µs PULSE WIDTH<br>Tj = 25°C Tj = 150°C<br>0.01 daEPHelEs aanll CHI|| 0.1 l llllalll<br>0.1 1 10 100 0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 100 2.0<br>ID = -7.0A<br>———se ee ee ee ee eee eee P ELE<br>Paa ee eeAATee ee 1.5 UE EEE EEE<br>T  = 150  CJ °<br> 10<br>pg | | | PEELE<br>SS —————— >ET LLann |<br>Ee A 2 2 ee ee ee ee ee 1.0 ALLELa LERram TTLL<br>Ff} ° TTL<br>T  = 25  CJ<br> 1 P y =anil<br>=] SS SSS PEELE<br>0.5<br>ER—— esee es PEELE EEE<br>V      = -15VDS<br>0.1 ee 20µs PULSE WIDTH 0.0 HURUAU OUUUDURAAAAN U VGS I = -10V<br>2.0 3.0 4.0 5.0 6.0 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>-V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>D<br>-I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>-ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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3200 T_T VCGSiss == 0V,Cgs + Cf = 1MHzgd , C      SHORTEDds 16 ID = -7.0A TL VDS=-24V TT<br>2800 Crss = Cgd 14 VDS=-15V<br>S Coss = Cds + C e gd eee<br>2400 enee Ciss tn 12 pofee te fe ty<br>2000 10<br>es a<br>1600 fe | 8 a<br>es aA<br>1200 fe | 6 a<br>es ee ee<br>800 es | 4 ee<br>Coss<br>400 PS S 2 TOP TAT eee<br>Se Crss t ee ee<br>0 PF 0 2PAPER EEE<br> 1  10  100 0 10 20 30 40 50 60<br>-V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100  100<br>OPERATION IN THIS AREA LIMITED<br>T  = 25  CJ ° BY RDS(on)<br>=, Set et coo oot<br>T  = 150  CJ °<br>TA yh<br> 10<br>—————— 100us<br>PY “TA Re<br> 10<br>nee 1ms<br> 1<br>SES meen a es Sees<br>= ———oO ATH oI Hl<br>A EC  T TCJ = 25  C= 150  C° ° 10ms<br>0.1 HEE{fi | | |E| t V      = 0 V GS | |  1 E  Single Pulse T I<br>0.0 1.5 3.0 4.5 6.0 0.1  1  10  100<br>-V     ,Source-to-Drain Voltage (V)SD -V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D-<br>SD<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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8.0 piNY ti tt tt Vo Rp 3<br>6.0<br>PA EE Et ves (Dour<br>-<br>+<br>PLLA ET TTT fel ve<br>4.0<br>SERRE Neee es ≤ 1<br>≤ 0.1 %<br>pitt tE EEN | Sener ©<br>Fig 10a.   Switching Time Test Circuit<br>po IN I |<br>2.0<br>td(on) tr td(off) tf<br>0.0 V10%GS | ys<br>25 pit 50  it 75 100 ty 125 150 Tova<br>T   , Case TemperatureC (  C)°<br>90% \ |<br>Fig 9.   Maximum Drain Current Vs. VDS \<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 100<br>D = 0.50<br>S E<br>0.20<br> 10 NE cel |<br>arm 0.10 [rt] err ttt tt<br>0.05<br>=, HHH rast HEE re ee ee<br>0.02<br>PDM<br> 1 = 0.01 oeroReaL$<br>t1<br>(THERMAL RESPONSE)SINGLE PULSE t2<br>un a e Ee e Notes:<br>eee 1. Duty factor D = t   / t1 2<br>a 2. Peak TJ= P DM x  ZthJA + TA<br>0.1<br>0.0001 0.001 0.01 0.1  1  10  100  1000<br>t  , Rectangular Pulse Duration (sec)1<br>D<br>-I   , Drain Current (A)<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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0.070 0.120<br>0.060 CITT TTI] 6 TT T y<br>0.050 APT ETT Ey 0.080 P<br>0.040 TTT EE OP<br>ID = -7.0A<br>VGS = -4.5V<br>0.030<br>0.040<br>INP tty yfyyA<br>VGS = -10V<br>0.020 Se<br>PTEE e e ee<br>0.010  EET p T<br>0.000<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0<br>0 10 20 30 40 50 60<br>-VGS, Gate -to -Source Voltage  (V)<br>-ID , Drain Current ( A )<br> )<br>ΩRDS ( on ) , Drain-to-Source On Resistance (<br>)<br>ΩRDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 12.** Typical On-Resistance Vs. Gate Voltage 

**Fig 13.** Typical On-Resistance Vs. Drain Current 

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QG<br>10 V ——————<br>QGS QGD<br>hoo<br>VG<br>Charge<br>**----- End of picture text -----**<br>


**Fig 14a.** Basic Gate Charge Waveform 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>THe) D.U.T. | +-VDS<br>VGS<br>ih<br>-3mA<br>oe |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 14b.** Gate Charge Test Circuit 

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2.4 ee 150 a<br>2.1 PNET 120 RMMIEETIPE<br>ee ee ee ne ee NU IP TT Tl<br>ID = -250µA 90<br>aN UT aT<br>1.8 a PAE TAI EITM CTT<br>NN re a 2<br>60<br>PEEING EUNIEIEIETTI<br>INSTI<br>INET Tl<br>1.5<br>30<br>TTT ITI<br>1.2 PN 0 ARPS CEI THIS CUE<br>-75 -50 -25 0 25 50 75 100 125 150 0.001 0.010 0.100 1.000 10.000 100.000<br>TJ , Temperature ( °C ) Time (sec)<br>-VGS(th) ( V )<br>Power (W)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Vgs(th) Vs. Junction Temperature 

Typical Power Vs. Time 

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+ Circuit Layout Considerations<br>   •  Low Stray Inductance<br> •   Ground Plane<br> •   Low Leakage Inductance<br>[| - Current Transformer<br>+<br>- - +<br>0<br>•   +<br>(h ae •   dv/dt controlledIsp controlled by byDuty Rg Factor "D" -<br>•<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. nd Period _t<br>VGS=10V<br>‘<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current Current<br>di/dt<br>@|" D.U.T. VDS Waveform Diode Recovery fo<br>dv/dt<br>VDD<br>av<br>Re-Applied<br>Voltage Body Diode  a Forward Drop ae<br>@ Inductor Curent<br>a<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


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## Micro8 Package Outline 

Dimensions are shown in milimeters (inches) 

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LEAD ASSIGNMENTS       INCHES        MILLIMETERS<br>D DIM   MIN       MAX       MIN      MAX<br>- B - 3 D  D  D  D D1 D1 D2 D2 A       .036       .044        0.91      1.11<br>A1     .004       .008        0.10      0.20<br>Ce PE<br>8   7   6   5 8   7   6   5 B       .010       .014        0.25      0.36<br>of 3 E ‘ait 8   7   6   5 H qgaa SINGLE BRR DUAL  Pp C       .005       .007        0.13      0.18D       .116       .120        2.95      3.05<br>- A - f 0.25  (.010)       M     A    M | _ 1   2   3   4 1   2   3   4 --—|—_}—| e        .0256 BASIC        0.65 BASIC [+]<br>i 1   2   3   4 e1      .0128 BASIC        0.33 BASIC -<br>S  S  S  G S1 G1 S2 G2 E       .116       .120         2.95      3.05<br>H       .188       .198        4.78       5.03<br>cH! e a_|Le |es L        .016      .026         0.41       0.66<br>6X θ          0°          6°           0°           6°<br>e 1<br>θ RECOMMENDED FOOTPRINT<br>- C - choo A 0.10  (.004) [|  1.04( .041 )   8X [ [|   0.38( .015 ) JT [8X] |<br>SP B     8X A 1 reeaU! L C<br>8X 8X<br>0.08  (.003)         M    C   A  S    B   S   3.20   4.24   5.28<br>( .126 ) ( .167 ) ( .208 )<br>NOTES:<br>      1  DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.<br>      2  CONTROLLING DIMENSION : INCH. ak    0.65<br>      3  DIMENSIONS DO NOT INCLUDE MOLD FLASH. ( .0256 ) [6X]<br>**----- End of picture text -----**<br>


## Micro8 Part Marking Information 

EXAMPLE: THIS IS AN IRF7501 

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**----- Start of picture text -----**<br>
LOT CODE (XX)<br>PART NUMBER<br>**----- End of picture text -----**<br>


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DATE CODE (YW) - See table below<br>Y =  YEAR<br>W =  WEEK<br>P =  DESIGNATES LEAD - FREE<br>PRODUCT (OPTIONAL)<br>**----- End of picture text -----**<br>


WW =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR 

|||WORK|WORK|||
|---|---|---|---|---|---|
|YEAR|Y|WEEK||W||
|2001|1|01||A||
|2003<br>2002<br>2004|3<br>2<br>4|03<br>02<br>04||C<br>B<br>D||
|2005|5|||||
|2006|6|||||
|2007|7|||||
|2008|8|||||
|2009<br>2010|9<br>0|26<br>24<br>25||Z<br>X<br>Y||



WW =  (27-52) IF PRECEDED BY A LETTER 

|||WORK|WORK|||
|---|---|---|---|---|---|
|YEAR|Y|WEEK||W||
|2001|A|27||A||
|2002|B|28||B||
|2003|C|29||C||
|2004|D|30||D||
|2005|E|||||
|2006|F|||||
|2007|G|||||
|2008|H|||||
|2009|J|||||
|2010|K|50||X||
|||51||Y||
|||52||Z||



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## Micro8 Tape & Reel Information 

Dimensions are shown in millimeters (inches) 

**==> picture [207 x 333] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>Oo Oo oO<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 ) tL FEED DIRECTION<br>7.9 ( .312 )<br> 330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES: 

1.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

2.   CONTROLLING DIMENSION : MILLIMETER. 

NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 02/05 

www.irf.com 

10 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF7726TRPBF/power-mosfet-p-channel-30-v-7-a-0026-ohm-soic)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf7726trpbf/mosfet-p-ch-30v-7a-usoic-8/dp/2577157)
---

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