# Power MOSFET, N Channel, 100 V, 14.4 A, 0.062 ohm, DirectFET SB, Surface Mount

![Product image](https://novapart.co/image/farnell:1778234/)

**URL**: https://novapart.co/products/IRF7665S2TRPBF/power-mosfet-n-channel-100-v-144-a-0062-ohm
**SKU**: IRF7665S2TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8870
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:14.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.051ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Powe

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 30W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DirectFET SB |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 14.4A |
| Drain Source On State Resistance | 0.062ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1778234/)

## PD -96239 IRF7665S2TRPbF IRF7665S2TR1PbF 

## **Features** 

- Key parameters optimized for Class-D audio amplifier applications 

- Low RDS(on) for improved efficiency 

- Low Qg for better THD and improved efficiency 

- Low Qrr for better THD and lower EMI 

- Low package stray inductance for reduced ringing and lower EMI 

- Can deliver up to 100W per channel into 8Ω with no heatsink 

- e Dual sided cooling compatible Compatible with existing surface mount technologies RoHS compliant containing no lead or bromide Lead-Free (Qualified up to 260°C Reflow) Industrial Qualified 

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Key Parameters<br>VDS 100 V<br>RDS(on) typ. @ VGS = 10V P| 51 m<br>Qg typ. Pf 8.3 nC<br> RG(int) typ. 3.5<br>pf<br>|<br>ee ie,<br>DirectFET  ISOMETRIC<br>**----- End of picture text -----**<br>


Applicable DirectFET Outline and  Substrate Outline (see p. 6, 7 for details) **SB SC M2 M4 L4 L6 L8** ~~Ss~~ **Description** This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest  processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. 

The IRF7665S2TR/TR1PbF device utilizes DirectFET[TM] packaging technology.  DirectFET[TM] packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging.  Lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients.  The DirectFET[TM] package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes.  The DirectFET[TM] package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. 

## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-to-Source Voltage<br>~~a~~|100<br>~~a~~|V<br>~~ee~~|
|VGS|Gate-to-Source Voltage<br>~~a~~<br>~~——_————~~|± 20<br>~~a~~<br>~~——_————~~||
|ID@ TC= 25°C|Continuous Drain Current,VGS@ 10V<br>~~a~~<br>~~a~~<br>~~——_————~~|14.4<br>~~a~~<br>~~a~~<br>~~——_————~~|A<br>~~ee~~|
|ID@ TC= 100°C|Continuous Drain Current,VGS@ 10V<br>~~a~~<br>~~——_————~~|10.2<br>~~a~~<br>~~——_————~~||
|ID@ TA= 25°C|Continuous Drain Current,VGS@ 10V<br>~~a~~<br>~~——_————~~|4.1<br>~~a~~<br>~~——_————~~||
|IDM|Pulsed Drain Current<br>~~——_————~~<br>~~ae~~|58<br>~~——_————~~||
|PD@TC= 25°C|Maximum Power Dissipation<br>~~——_————~~<br>~~a~~<br>~~ae~~|30<br>~~——_———— ~~<br>~~a~~|W<br> ~~ee~~<br>~~a~~|
|PD@TC= 100°C|Power Dissipation<br>~~—~~<br>~~ae~~|15<br>~~—~~||
|PD@TA= 25°C|Power Dissipation<br>~~ae~~<br>~~a~~|2.4<br>~~a~~||
||Linear Derating Factor<br>~~ae~~<br>~~a~~<br>~~a~~|0.2<br>~~a~~<br>~~a~~|W/°C<br>~~a~~<br>~~a~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~a~~|-55  to + 175<br>~~a~~|°C<br>~~a~~|



**Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJA|Junction-to-Ambient<br>~~a~~|–––<br>~~a~~|63<br>~~a~~|°C/W<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|
|RθJA|Junction-to-Ambient<br>~~a~~|12.5<br>~~a~~|–––<br>~~a~~||
|RθJA|Junction-to-Ambient<br>~~a~~|20<br>~~a~~|–––<br>~~a~~||
|RθJ-Can|Junction-to-Can<br>~~a~~|–––<br>~~a~~|5.0<br>~~a~~||
|RθJ-PCB|Junction-to-PCB Mounted<br>~~a~~|1.4<br>~~a~~|–––<br>~~a~~||



> Notes ® hrough ® are on page 2 www.irf.com 

1 07/02/09 

## IRF7665S2TR/TR1PbF 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Units**<br>**Conditions**|
|---|---|
|V(BR)DSS<br>∆V(BR)DSS/∆TJ<br>RDS(on)<br>VGS(th)<br>IDSS|Drain-to-Source Breakdown Voltage<br>100<br>–––<br>–––<br>V<br>Breakdown Voltage Temp. Coefficient<br>–––<br>0.10<br>–––<br>V/°C<br>Static Drain-to-Source On-Resistance<br>–––<br>51<br>62<br>mΩ<br>Gate Threshold Voltage<br>3.0<br>4.0<br>5.0<br>V<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>µA<br>–––<br>–––<br>250<br>VGS= 0V, ID= 250µA<br>Reference to 25°C, ID= 1mA<br>VGS= 10V, ID= 8.9A<br>VDS= VGS, ID= 25µA<br>VDS= 100V, VGS= 0V<br>VDS= 80V, VGS= 0V, TJ= 125°C<br>~~es~~<br>~~QO QQ~~<br>~~ss~~<br>~~QO GQ~~<br>~~QO~~<br>~~QQ~~<br>~~©~~<br>~~ss~~<br>~~QO~~<br>~~GO~~<br>~~EE~~<br>~~a~~|
|IGSS<br>RG(int)|Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>Internal Gate Resistance<br>–––<br>3.5<br>5.0<br>Ω<br>VGS= 20V<br>VGS= -20V<br>~~a~~<br>~~a~~<br>~~ee~~<br>~~DG~~<br>~~GO~~|
|**Dynamic @ T**|**namic @ TJ = 25°C(unless otherwise specified)**|
||**Parameter**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Units**<br>**Conditions**|
|gfs<br>Qg|Forward Transconductance<br>8.8<br>–––<br>–––<br>S<br>Total Gate Charge<br>–––<br>8.3<br>13<br>VDS= 50V<br>VDS= 25V, ID= 8.9A<br>~~GO~~<br>~~GO GO~~<br>~~es~~|
|Qgs1<br>Qgs2<br>Qgd|Pre-Vth Gate-to-Source Charge<br>–––<br>1.9<br>–––<br>VGS= 10V<br>Post-Vth Gate-to-Source Charge<br>–––<br>0.77<br>–––<br>ID= 8.9A<br>Gate-to-Drain Charge<br>–––<br>3.2<br>–––<br>nC<br>See Fig. 6 and 17<br>~~es~~<br>~~PRes~~|
|Qgodr|Gate Charge Overdrive<br>–––<br>2.4<br>–––<br>~~es~~|
|Qsw|Switch Charge(Qgs2+ Qgd)<br>–––<br>4.0<br>–––<br>~~es~~|
|td(on)|Turn-On DelayTime<br>–––<br>3.8<br>–––<br>VDD= 50V<br>~~es~~|
|tr|Rise Time<br>–––<br>6.4<br>–––<br>ID= 8.9A<br>~~es~~|
|td(off)<br>tf<br>Ciss|Turn-Off DelayTime<br>–––<br>7.1<br>–––<br>ns<br>Fall Time<br>–––<br>3.6<br>–––<br>Input Capacitance<br>–––<br>515<br>–––<br>RG= 6.8Ω<br>VGS= 10V<br>VGS= 0V<br>~~es~~<br>~~es~~<br>~~@~~<br>~~es~~|
|Coss|Output Capacitance<br>–––<br>112<br>–––<br>VDS= 25V<br>~~es~~|
|Crss|Reverse Transfer Capacitance<br>–––<br>30<br>–––<br>pF<br>ƒ= 1.0MHz<br>~~es~~|
|Coss<br>Output Capacitance<br>–––<br>533<br>–––<br>Coss<br>Output Capacitance<br>–––<br>67<br>–––<br>Cosseff.<br>Effective Output Capacitance<br>–––<br>115<br>–––<br>**Avalanche Characteristics**<br>VGS= 0V,  VDS= 1.0V,ƒ= 1.0MHz<br>VGS= 0V,  VDS= 80V,ƒ= 1.0MHz<br>VGS= 0V, VDS= 0V to 80V<br>~~es~~<br>~~RRes~~<br>~~©~~||
||**Parameter**<br>**Units**<br>**Max.**<br>**Typ.**|
|EAS<br>IAR|Single Pulse Avalanche Energy<br>mJ<br>Avalanche Current<br>A<br>37<br>8.9<br>–––<br>–––<br>~~RQ~~<br>~~a~~<br>~~©~~<br>~~DO~~|
|**Diode Characteristics**||
||**Parameter**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Units**<br>**Conditions**|
|IS|D<br>Continuous Source Current<br>MOSFET symbol<br>–––<br>–––<br>14.4|
||(BodyDiode)<br>A<br>showing  the|
|ISM|G<br>Pulsed Source Current<br>integral reverse<br>58<br>–––<br>–––|
||S<br>(BodyDiode)<br>p-njunction diode.|
|VSD<br>trr<br>Qrr|Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>Reverse RecoveryTime<br>–––<br>33<br>–––<br>ns<br>Reverse RecoveryCharge<br>–––<br>38<br>–––<br>nC<br>TJ= 25°C,IS= 8.9A,VGS= 0V<br>TJ= 25°C, IF= 8.9A, VDD= 25V<br>di/dt = 100A/µs<br>~~OQO~~<br>~~ff~~<br>~~a~~<br>~~@~~|



Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. TC measured with thermal couple mounted to topC measured with thermal couple mounted to top measured with thermal couple mounted to top (Drain) of part. 

o Repetitive rating;  pulse width limited by @ Mounted on minimum footprint full size board with max. junction temperature. metalized back and with small clip heatsink. @ Starting TJ = 25°C, L = 0.944mH, RG = 25Ω, IAS = 8.9A. TC measured with thermal couple mounted to topC measured with thermal couple mounted to top measured with thermal couple mounted to top ® Surface mounted on 1 in. square Cu board. (Drain) of part. @ Pulse width ≤ 400µs; duty cycle ≤ 2%. © Rθ is measured at TJ of approximately 90°C. © Coss eff. is a fixed capacitance that gives the same ® Based on testing done using a typical device & evaluation board charging time as Coss while VDS is rising from 0 to 80% VDSS. at Vbus=±45V, fSW=400KHz, and TA=25°C.  The delta case =400KHz, and TA=25°C.  The delta case =25°C.  The delta case 

Based on testing done using a typical device & evaluation board at Vbus=±45V, fSW=400KHz, and TA=25°C.  The delta case temperature ∆TC is 55°C. 

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## IRF7665S2TR/TR1PbF 

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100<br>VGS<br>TOP           15V<br>10V<br>10 8.0V<br>7.0V<br>6.5V<br>6.0V<br>5.5V<br>1 BOTTOM 5.0V<br>0.1 ell meaaaiit—aai<br>0.01<br>5.0V<br>≤60µs PULSE WIDTH<br>Tj = 25°C<br>0.001 enmiilll il<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

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100<br>10<br>| 17] | | |<br>Pt AE Pt |<br>1 TJ = -40°C<br>TJ = 25°C<br>P| PISS TJ = 175°C =<br>0.1 r T _<br>e s VDS = 25V<br>≤60µs PULSE WIDTH<br>ade<br>0.01 | ft [ttt]<br>2 4 6 8 10 12 14 16<br>VGS, Gate-to-Source Voltage (V)<br>Fig 3.   Typical Transfer Characteristics<br>10000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>C  = C<br>rss   gd<br>C = C + C<br>oss   ds  gd<br>1000 = en<br>p H<br>C<br>iss<br>S SS<br>Se | eenSH<br>C<br>oss<br>100<br>Tye e SSO<br>Crss<br>PRR eeEEAeee!<br>e e e |<br>10<br>1 10 100<br>ID, Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


VDS, Drain-to-Source Voltage (V) 

**Fig 5.** Typical Capacitance vs.Drain-to-Source Voltage 

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100<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V<br>6.5V<br>6.0V<br>10 5.5V<br>BOTTOM 5.0V<br>| [f] tf} yg [e] —_——<br>1<br>5.0V<br>≤60µs PULSE WIDTH<br>Tj = 175°C<br>0.1 lll lll<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>2.5<br>ID = 8.9A<br>VGS = 10V<br>2.0<br>A<br>PL ELLE TA<br>1.5<br>L LL ALE<br>1.0 L LL LLL<br>A TTTT<br>Steet<br>0.5<br>-60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Junction Temperature (°C)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

**Fig 4.** Normalized On-Resistance vs. Temperature 

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14.0<br>ID= 8.9A<br>12.0<br>VDS= 80V<br>10.0 | VDS= 50V Ws<br>VDS= 20V _|<br>SK/<br>8.0<br>p e WY | |<br>6.0 A neWH<br>4.0 T f/ TT<br>2.00.0 7J) ) |} fF ft | ] ft fd ff<br>0 2 4 6 8 10 12<br> QG,  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge vs.Gate-to-Source Voltage 

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## IRF7665S2TR/TR1PbF 

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100<br>T = -40°C<br>J<br>TJ = 25°CTJ = 175°C ht | | YY td<br>10<br>1 ==. == ===<br>0.1 = F SSS SS|<br>0.01 ffi | | | hy le VGS = 0V |_|<br>0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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16<br>14<br>C TT TIT.<br>12<br>P SS}<br>10<br>8 a e<br>6 T TT INES<br>4 S a<br>2 | | | | | Ly<br>0 Ft | ft tt<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

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1000<br>OPERATION IN THIS AREA<br>100 B aa LIMITED BY R DS(on) alll<br>10 10 0 µsec<br>1msec<br>1 B AM 10 g msec e)<br>SAMAeESS tti DC s remk<br>0.1 T c = 25°C Sv eail l mematiA<br>Tj = 175°C<br>Single Pulse<br>0.01 CESALTTT<br>0 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>6.5<br>S ee<br>EEEPEE EP<br>5.5 Ys |<br>enn<br>4.5<br>E SSUREEZan<br>3.5 |  CSS[|<br>ID = 25µA<br>AER<br>ID = 250µA<br>2.5 ID = 1.0mA<br>D = 1.0A ZL7RES><br>1.5 \<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>ID,  Drain-to-Source Current (A)<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 10.** Threshold Voltage vs. Temperature 

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10<br>D = 0.50<br>1 o 0.20 e<br>0.10<br>——— 0.05 iE ECT TTT OE TTR AT<br>0.02<br>0.1 a S. 0.01 ail R1 R1 R2 R2 R3 R3 R4R4 rH Ri (°C/W)   0.49687   0.000119 τi (sec)<br>Fe e τJ τ co Jτ1τ1 τ2 τ2 τ3τ3 τ4τ4 τCτ 0.00517   8.2314862.55852   0.018926 e<br>0.01 e P e 0 eee Ci=  T Ciτi/Rii/Ri T T T | 1.94004   0.002741 aa<br>E SINGLE PULSE E Notes: ee eee =e<br>FSRPT ( THERMAL RESPONSE ) E EEee 1. Duty Factor D = t1/t2 IS |<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001 es ll<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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## IRF7665S2TR/TR1PbF 

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320<br>Vgs = 10V<br>280<br>F H<br>240<br>a<br>200<br>160 TJ = 125°C<br>r y<br>120<br>TJ = 25°C<br>80<br>a<br>40 a ae<br>0 10 20 30 40<br>ID, Drain Current (A)<br>Fig 12.    On-Resistance vs. Gate Voltage<br>15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>20VVGS i<br>tp 0.01Ω<br>5 ,<br> Unclamped Inductive Test Circuit<br>V(BR)DSS<br><< tp ><br>/ ‘|\<br>IAS<br>)Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 15a.** Unclamped Inductive Test Circuit 

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140<br>ID = 8.9A<br>120<br>100 AULT<br>TJ = 125°C<br>|  Pek<br>80<br>SCO<br>60 T J  = 25°C<br>NEUE<br>40 fitteeess<br>6 7 8 9 10 11 12 13 14 15<br>VGS, Gate -to -Source Voltage  (V)<br>) Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 13.** On-Resistance vs. Drain Current 

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160<br>FELL ID<br>140<br>TOP         1.64A<br>  3.04A<br>120<br>BOTTOM   8.90A<br>N PN ELEE<br>100<br>PEN EEE EEL<br>80<br>60<br>N ING EET<br>40 P SN<br>20 P SRSSNOTT<br>PELL SSS<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Avalanche Energy vs. Drain Current 

**Fig 15b.** Unclamped Inductive Waveforms 

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+<br>-<br>o om<br>≤ 1<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 16a.** Switching Time Test Circuit www.irf.com 

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V<br>DS<br>90%<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 16b.** Switching Time Waveforms 

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## IRF7665S2TR/TR1PbF 

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Current Regulator<br>l| Same Type as D.U.T. Vds<br>|<br>50KΩ Vgs<br>12V .2µF<br>| .3µF i<br>+<br>D.U.T. -VDS<br>VGS Vgs(th)<br>3mA<br>IG ID<br>Current Sampling Resistors<br>Qgs1 Qgs2 Qgd Qgodr<br> Gate Charge Test Circuit Fig 17b.    Gate Charge Waveform<br>D.U.T<br>+<br>fC) Circuit Layout Considerations<br>   •  Low Stray Inductance<br> •<br> •<br>| | - GroundCurrentLow LeakageTransformerPlane Inductance<br>+<br>° © ®<br>- - +<br>Ut<br>®<br>•<br>Ro ) •  •   Driverdi/dt controlledsame typeby Rgas D.U.T. Vop +<br>•   D.U.T. - Device Under Test -<br>> Isp controlled byDuty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. I Period<br>VGS=10V<br>D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current Current =<br>di/dt<br>©)ii D.U.T. VDS Waveform /<br>Diode Recoverydv/dt \ F<br>VDD<br>mi<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Indu nt<br>a<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


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Fig 17a.   Gate Charge Test Circuit<br>**----- End of picture text -----**<br>


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Id<br>**----- End of picture text -----**<br>


**Fig 18.** Diode Reverse Recovery Test Circuit for N-Channel HEXFET ® Power MOSFETs 

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6 

IRF7665S2TR/TR1PbF 

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations 

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CL<br>**----- End of picture text -----**<br>


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G = GATE<br>D = DRAIN<br>“<br>S = SOURCE<br>0.550<br>1.050<br>: 0.900<br>D D<br>oe 7 4 AA G S  Om<br>D D<br>**----- End of picture text -----**<br>


www.irf.com 

7 

## IRF7665S2TR/TR1PbF 

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations 

**==> picture [223 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
PT DIMENSIONS<br>METRIC IMPERIAL<br>ee ee<br>CODE MIN MAX  MIN  MAX<br>eeee<br>Pot  A 4.75 4.85 0.187 0.191<br>Pot  B 3.70 3.95 0.146 0.156<br>Pot  C 2.75 2.85 0.108 0.112<br>Pot  D 0.35 0.45 0.014 0.018<br>Pot  E 0.48 0.52 0.019 0.020<br>Pot  F 0.88 0.92 0.035 0.036<br>( pp  G 0.98 1.02 0.039 0.040<br> H 0.88 0.92 0.035 0.036<br> J N/A N/A N/A N/A<br> K 0.95 1.05 0.037 0.041<br>Pot  L 1.85 1.95 0.073 0.073<br>Pot  M 0.616 0.676 0.0235 0.0274<br>Pot  R 0.020 0.080 0.0008 0.0031<br>a  P 0.08 0.17 0.003 0.007<br>**----- End of picture text -----**<br>


## DirectFET Part Marking 

## **GATE MARKING** 

## **LOGO** 

## **PART NUMBER** 

## **BATCH NUMBER** 

## **DATE CODE** 

Line above the last character of the date code indicates "Lead-Free" 

www.irf.com 

8 

## IRF7665S2TR/TR1PbF 

## DirectFET ™ Tape & Reel Dimension (Showing component orientation). 

**==> picture [115 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
Loaded Tape Feed Direction<br>**----- End of picture text -----**<br>


**==> picture [439 x 159] intentionally omitted <==**

**----- Start of picture text -----**<br>
J DIMENSIONS<br>NOTE: Controlling dimensions in mm NOTE: CONTROLLING METRIC IMPERIAL<br>Std reel quantity is 4800 parts. I RF7665S2PbFRF7665S2 DIMENSIONS IN MM a ee<br>a CODE  ee  MIN  MAX  MIN  MAX<br> A  7.90  8.10 0.311 0.319<br>REEL DIMENSIONS<br>o o  B  3.90  4.10 0.154 ee 0.161<br>TT STANDARD OPTION  r—“sOCSCOCCCCC‘sdCY METRIC (QTY 4800) IMPERIAL —es  C 11.90 ee 12.30 ee 0.469 0.484<br> D  5.45  5.55 0.215 0.219<br>CODE  MIN  MAX  MIN  MAX<br>eeeeHf}   A  B 330.0 20.2 eeee  N.C N.C 12.9920.795 ____]  N.C N.C aaa  E F  eeee  4.00 5.00 ee  4.20 5.20 0.1580.197 eeee 0.1650.205 eeee<br>ee   C  12.8 es  13.2 ee 0.504 ee 0.520 a  G  ee  1.50  N.C 0.059 ee  N.C ee<br>es   D   1.5  N.C 0.059  N.C  H  1.50  1.60 0.059 ee 0.063 ee<br>  E 100.0  N.C 3.937  N.C<br>ee es es a ee<br>  F   N.C  18.4  N.C 0.724<br>ee ee ee ee<br>  G  12.4  14.4 0.488 0.567<br>ee eeee<br>es   H ee  11.9 ee  15.4 ee 0.469 eeeee 0.606<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. This product has been designed and qualified to MSL1 rating for the Industrial market. 

Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2009 

www.irf.com 

9 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF7665S2TRPBF/power-mosfet-n-channel-100-v-144-a-0062-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf7665s2trpbf/mosfet-n-ch-100v-14-4a-sb/dp/1778234)
---

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