# Power MOSFET, N Channel, 20 V, 6.5 A, 0.03 ohm, µSOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2579993/)

**URL**: https://novapart.co/products/IRF7607TRPBF/power-mosfet-n-channel-20-v-65-a-003-ohm-soic
**SKU**: IRF7607TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3900
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.03ohm; ; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (08-Jul-2021) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 1.8W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | µSOIC |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6.5A |
| Drain Source On State Resistance | 0.03ohm |
| Gate Source Threshold Voltage Max | 1.2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2579993/)

## PD - 95698 

## IRF7607PbF 

## HEXFET ® Power MOSFET 

Trench Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Lead-Free 

## **Description** 

New trench HEXFET[®] power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area. This benefit, combined with the ruggedized  device  design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The new Micro8™ package has half the footprint area of the standard SO-8. This makes the Micro8 an ideal package for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. 

**==> picture [203 x 232] intentionally omitted <==**

**----- Start of picture text -----**<br>
A<br>A<br>S 1 8 D<br>S 2 7 D VDSS = 20V<br>S 3 6 D<br>=“(ef) i n=<br>G tt 4 in 5 D R  = 0.030Ω<br>DS(on)<br>Top View<br>Micro8™<br>**----- End of picture text -----**<br>


|~~rs~~<br>~~es~~|**Parameter**<br>~~sO~~<br>~~eG~~|**Max.**<br>~~sO~~<br>~~eG~~|**Units**<br>~~sO~~<br>~~eG~~|
|---|---|---|---|
|VDS<br>~~rs~~<br>~~es~~<br>~~———~~|Drain- Source Voltage<br>~~sO~~<br>~~eG~~<br>~~———~~|20<br>~~sO~~<br>~~eG~~<br>~~ae~~|V<br>~~sO~~<br>~~eG~~<br>~~ae~~|
|ID@ TA= 25°C<br>~~es~~<br>~~———~~|Continuous Drain Current, VGS@ 4.5V<br>~~eG~~<br>~~———~~|6.5<br>~~eG~~<br>~~ae~~|A<br>~~eG~~<br>~~ae~~<br>~~a~~<br>~~©~~|
|ID@ TA= 70°C<br>~~———~~<br>~~a~~|Continuous Drain Current, VGS@ 4.5V<br>~~———~~<br>~~a~~|5.2<br>~~ae~~<br>~~a~~||
|IDM<br>~~———~~<br>~~©~~|Pulsed Drain Current<br>~~———~~<br>~~©~~|50<br>~~ae~~<br>~~©~~||
|PD@TA= 25°C<br>~~———~~<br>~~|~~|Power Dissipation<br>~~———~~<br>~~|~~|1.8<br>~~ae~~<br>~~|~~|~~ae~~|
|PD@TA= 70°C<br>~~|~~<br>—CisdC|Power Dissipation<br>~~|~~<br>~~RG~~|1.2<br>~~|~~<br>~~RG~~||
|~~|~~<br>~~sO~~|Linear DeratingFactor<br>~~|~~<br>~~sO~~|0.014<br>~~|~~<br>~~sO~~|W/°C<br>~~sO~~|
|VGS<br>~~sO~~<br>~~**e**e~~|Gate-to-Source Voltage<br>~~sO~~|± 12<br>~~sO~~|V<br>~~sO~~|
|TJ,TSTG<br>~~**e**e~~|Junction and Storage Temperature Range<br>~~G~~|-55  to + 150<br>~~G~~|°C<br>~~G~~|



## **Thermal Resistance** 

**Parameter Max. Units** RθJA Maximum Junction-to-Ambient 70 °C/W ~~Re©~~ www.irf.com 1 

9/2/04 

|ee<br>~~Re~~|**Parameter**<br>ee<br>|**Min. **<br>ee<br>|**Typ. **<br>ee<br>|**Max.**<br>ee<br>~~se~~<br>|**Units**<br>ee<br>~~se~~<br>|**Conditions**<br>ee<br>|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~Re~~<br>~~a~~|Drain-to-Source Breakdown Voltage<br>~~DG~~|20<br>~~DG~~|–––<br>~~DG~~|–––<br>~~se~~<br>~~DG~~<br>~~ss~~|V<br>~~se~~<br>~~DG~~<br>~~ss~~|VGS= 0V, ID= 250µA<br>~~DG~~|
|∆V(BR)DSS/∆TJ<br>~~Re~~<br>~~a~~<br>~~a~~|Breakdown Voltage Temp. Coefficient<br><br>~~se~~|–––<br><br>~~se~~|0.016<br><br>~~se~~|–––<br>~~se~~<br><br>~~se~~<br>~~ss~~|V/°C<br>~~se~~<br><br>~~se~~<br>~~ss~~|Reference to 25°C, ID= 1mA<br><br>~~se~~|
|RDS(on)<br>~~a~~<br>~~es~~|Static Drain-to-Source On-Resistance<br>|<br>|–––<br>||–––|0.030<br>~~ss~~<br>~~Ss~~|Ω<br>~~ss~~<br>~~Ss~~<br>|VGS= 4.5V, ID= 6.5A<br>~~Ss~~|
|||–––<br>|<br>|<br>~~fs~~<br>|––– <br>~~fs~~<br>|0.045<br>~~ss~~<br>~~Ss~~<br>~~fs~~<br>||VGS= 2.5V, ID= 5.2A<br>~~Ss~~<br>|
|VGS(th)<br>~~ss~~<br>~~es~~|Gate Threshold Voltage<br>|<br>~~ss~~<br>|0.60<br>|<br>~~ss~~<br>~~fs~~<br><br>~~es~~|–––<br>~~ss~~<br>~~fs~~<br><br>~~es~~|1.2<br>~~Ss~~<br>~~ss~~<br>~~fs~~<br><br>~~es~~|V<br>~~Ss~~<br>~~ss~~<br>|VDS= VGS, ID= 250µA<br>~~Ss~~<br>~~ss~~<br>|
|gfs<br>~~es~~|Forward Transconductance<br>~~es~~|13<br>~~fs~~<br>~~es~~<br>~~es~~|–––<br>~~fs~~<br>~~es~~<br>~~es~~|–––<br>~~fs~~<br>~~es~~<br>~~es~~|S<br>~~es~~|VDS= 10V, ID= 6.5A<br>~~es~~|
|IDSS<br>~~es~~<br>~~8~~|Drain-to-Source Leakage Current<br><br>~~8~~|–––<br>~~fs~~<br><br>~~es~~<br>~~8~~|–––<br>~~fs~~<br><br>~~es~~<br>~~8~~|1.0<br>~~fs~~<br><br>~~es~~<br>~~8~~|~~8 Pe~~|VDS= 16V, VGS= 0V<br><br>~~Pe~~|
|||–––<br>~~8~~|–––<br>~~8~~|25<br>~~8~~||VDS= 16V, VGS= 0V, TJ= 70°C<br>~~Pe~~|
|~~Se~~<br>~~pf}~~|Gate-to-Source Forward Leakage<br>~~Se~~|–––<br>~~Se~~|–––<br>~~Se~~|-100<br>~~Se~~|~~Se~~|VGS= -12V<br>~~Se~~|
||Gate-to-Source Reverse Leakage<br>~~Se~~<br>~~pf}~~|–––<br>~~Se~~<br>{|–––<br>~~Se~~<br>}|100<br>~~Se~~||VGS= 12V<br>~~Se~~|
|Qg<br>~~pf}~~|Total Gate Charge<br>~~pf}~~|–––<br>{|15<br>}|22|nC|ID= 6.5A<br>VDS= 10V<br>VGS= 5.0V<br>~~@~~|
|Qgs<br>~~pf}~~<br>a<br>~~Pe ee~~|Gate-to-Source Charge<br>~~pf}~~<br>~~ee~~|–––<br>{|2.2<br>}|3.3|||
|Qgd<br>~~pf}~~<br>~~Pe ee~~<br>~~ee~~|Gate-to-Drain("Miller")Charge<br>~~pf}~~<br>~~ee~~<br>~~ee~~|–––<br>{<br>~~ee~~|3.5<br>}<br>~~ee~~|5.3|||
|td(on)<br>~~Pe ee~~<br>~~ee~~<br>ee|Turn-On Delay Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|8.5<br>~~ee~~|–––||VDD= 10V<br>ID= 1.0A<br>RG= 6.0Ω<br>RD= 10Ω<br>~~@~~<br>~~®~~|
|tr<br>~~ee~~<br>ee<br>ee|Rise Time<br>~~ee~~|–––<br>~~ee~~|11<br>~~ee~~|–––|||
|td(off)<br>ee<br>ee<br>~~ee~~|Turn-Off Delay Time|–––|36|–––|||
|tf<br>ee<br>~~ee~~<br>~~ee~~|Fall Time|–––|16|–––|||
|Ciss<br>~~ee~~<br>~~ee~~<br>es|Input Capacitance|–––|1310|–––|pF|VGS= 0V<br>VDS= 15V<br>ƒ = 1.0MHz<br>~~®~~|
|Coss<br>~~ee~~<br>es|Output Capacitance|–––|150|–––|||
|Crss<br>es<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~|36<br>~~ee~~|–––|||



## **Source-Drain Ratings and Characteristics** 

|~~a~~|||||||
|---|---|---|---|---|---|---|
|~~a~~|**Parameter**<br>|**Min. **<br>|**Typ. **<br>|**Max.**<br>|**Units**<br>|**Conditions**<br>|
|IS<br>~~a~~|Continuous Source Current<br>(Body Diode)<br>|||1.8<br>||MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>S<br>D<br>G<br>|
|ISM<br>|Pulsed Source Current<br>(BodyDiode)<br>|||50<br>|||
|VSD<br>~~Ds~~|Diode Forward Voltage<br>~~Ds~~|–––<br>~~Ds~~|–––<br>~~Ds~~|1.2<br>~~Ds~~|V<br>~~Ds~~|TJ= 25°C, IS= 1.7A, VGS= 0V<br>~~Ds~~|
|trr<br>~~fg~~<br>Re|Reverse Recovery Time<br>~~fg~~|–––<br>~~fg~~|19<br>~~fg~~|29<br>~~fg~~|ns<br>~~fg~~|TJ= 25°C, IF= 1.7A<br>di/dt = 100A/µs<br>~~fg~~<br>@|
|Qrr<br>~~fg~~<br>Re|Reverse Recovery Charge<br>~~fg~~|–––<br>~~fg~~|13<br>~~fg~~|20<br>~~fg~~|nC<br>~~fg~~||



® Repetitive rating;  pulse width limited by 6) Surface mounted on FR-4 board,  t ≤ max. junction temperature. (See fig. 11) 

Pulse width ≤ 400µs; duty cycle ≤ 2% 

www.irf.com 

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**==> picture [205 x 474] intentionally omitted <==**

**----- Start of picture text -----**<br>
 100<br>VGS<br>TOP 7.50V<br>5.00V<br>4.00V<br>3.50V<br>3.00V2.50V LE a |<br>2.00V<br>BOTTOM 1.50V ye |<br>y e HH<br> 10 fect |<br>JAM GE ee ell<br>Y | Liu EET EE<br>1.50V<br>20µs PULSE WIDTH<br>T yrA  | T  = 25J °C<br> 1<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics<br> 100<br>ssa<br>— T  = 25  CJ ° a<br>a<br>mmr T  = 150  CJ ° [|<br>Van |<br> 10 A |<br>————<br>4 A Py; Aof enfleeUT eeUE ee ee ee<br>V      = 15VDS<br>A e 20µs PULSE WIDTH<br> 1<br>1.5 2.0 2.5 3.0 3.5<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   ,  Drain-to-Source Current (A)<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**==> picture [212 x 472] intentionally omitted <==**

**----- Start of picture text -----**<br>
 100<br>VGS<br>TOP 7.50V<br>5.00V<br>4.00V<br>3.50V<br>3.00V 1 ee<br>2.50V<br>2.00V<br>BOTTOM 1.50V HY Zeon ||<br>J O<br> 10 OPeeea Bl<br>Vs |<br>1.50V<br>avail All<br>20µs PULSE WIDTH<br>T  = 150J °C<br> 1 V40ian e ON l ||<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 2.   Typical Output Characteristics<br>2.0<br>ID = 5.3A<br>PE LLET<br>PEELE EEE<br>1.5<br>He<br>ETL<br>PET<br>1.0 |] Let |<br>RTT TTT<br>EEE<br>0.5 ET<br>AE E VGS = 4.5V<br>0.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction TemperatureJ (  C)°<br>D<br>I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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**==> picture [212 x 473] intentionally omitted <==**

**----- Start of picture text -----**<br>
2000<br>VGS = 0V, f = 1MHz<br>Ciss = Cgs + Cgd , C      SHORTEDds<br>Crss = Cgd<br>1600 | [| Coss = Cds + Cgd<br>y j<br>P| | | Ciss Hf} ot TTT<br>1200 nPLEl hl ELTl<br>800 PLE ELT<br>400<br>ell<br>Coss<br>0 ttE S Crss s t IHttii<br> 1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 5.   Typical Capacitance Vs.<br>Drain-to-Source Voltage<br> 100<br>aeeee ee ee ee ee<br>ee ee<br> 10 mee<br>T  = 150  CJ °<br>—= 2o===oe<br> 1 I7I7_ |<br>== T  = 25  CJ °<br>a=  ==<br>FS<br>F t i V      = 0 V GS<br>0.1<br>0.4 0.6 0.8 1.0 1.2<br>V     ,Source-to-Drain Voltage (V)SD<br>C, Capacitance (pF)<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**==> picture [201 x 470] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>ID =<br>VDS = 10V<br>8 BE ER SEE<br>SEC<br>6 PLPittSERRAELETt EEL| eryYL<br>4 titty tt<br>2<br>SEE? 4EEREEEe<br>0 PVianellitl ete t iy.<br>0 4 8 12 16 20 24<br>Q   , Total Gate Charge (nC)G<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br> 100<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>2 ee el<br>2ee ll<br>Ba<br> 10 VAILll<br>CAS TAI 1ms<br>Er tt<br>Co Cis<br> T TAJ = 25  C= 150  C° ° TCC 10ms<br> Single Pulse KE<br> 1<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

www.irf.com 

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**==> picture [436 x 475] intentionally omitted <==**

**----- Start of picture text -----**<br>
6.0 SSS 0.20 S ooo<br>5.0 0.10<br>NT tT tt NS<br>4.0 N 0.00 aN<br>P SS = PSA<br>Id = 250µA<br>-0.10<br>3.0 aaFRSA eeeNeee = C C PC NS<br>arene -0.20<br>2.0 PEPE = E CKET<br>FEE E CE<br>-0.30<br>1.0 Pt te tT ET TT A<br>FN E ee<br>-0.40<br>0.0 Fi| |t?tT dt ht SN<br>25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>T   , Case TemperatureC (  C)° TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Typical Vgs(th) Variance Vs.<br>Case Temperature  Juction Temperature<br> 100<br>Ly D = 0.500.20 Corr em nT<br> 10<br>0.10<br>G 0.050.02 t A PDM<br> 1<br>0.01 t1<br>t2<br>Notes:<br>SINGLE PULSE 1. Duty factor D = t   / t1 2<br>ee Patil (THERMAL RESPONSE) TUT ETT 2. Peak T J = P DM x  Z thJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJA<br>(Z        )<br>Thermal Response<br>VGS(th) ,  Variace ( V )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

www.irf.com 

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**==> picture [435 x 250] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.040 0.10<br>0.035 0.08<br>0.030 0.06<br>0.025 Id = 5.3A 0.04 VGS= 2.5V<br>—j——7—_| | VGS = 4.5V<br>0.020 0.02 eeee ee<br>Hi e p a p<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 10 20 30 40<br>VGS, Gate -to -Source Voltage  ( V ) ID, - Drain Current (A )<br>Fig 12.    Typical On-Resistance Vs. Fig 13.    Typical On-Resistance Vs.<br>Gate Voltage Drain Current<br>)<br>Ω<br> ) RDS ( on) , Drain-to-Source On Resistance (<br>Ω<br>RDS(on) ,  Drain-to -Source Voltage (<br>**----- End of picture text -----**<br>


www.irf.com 

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## Micro8 Package Outline 

Dimensions are shown in milimeters (inches) 

**==> picture [305 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
LEAD ASSIGNMENTS       INCHES        MILLIMETERS<br>- B -D 3 D  D  D  D — D1 D1 D2 D2 [Reo DIMA       .036       .044        0.91      1.11  MIN       MAX       MIN      MAX<br>A1     .004       .008        0.10      0.20<br>~ 3 E Loo(oe 8   7   6   5 H 8   7   6   5SINGLE 8   7   6   5DUAL co B       .010       .014        0.25      0.36C       .005       .007        0.13      0.18D       .116       .120        2.95      3.05<br>- A - 0.25  (.010)       M     A    M 1   2   3   4 1   2   3   4 e        .0256 BASIC        0.65 BASIC<br>1   2   3   4 e1      .0128 BASIC        0.33 BASIC<br>Tal S  S  S  G S1 G1 S2 G2 —— E       .116       .120         2.95      3.05<br>H       .188       .198        4.78       5.03<br>e L        .016      .026         0.41       0.66<br>6X ee θ          0°          6°           0°           6°<br>ote e 1 ee<br>θ RECOMMENDED FOOTPRINT<br>A  1.04   0.38<br>- C - — 0.10  (.004) aa ( .041 )   8X ( .015 )  [8X]<br>B     8X A 1 L C<br>re a 8X 8X Laas]<br>0.08  (.003)         M    C   A  S    B   S   3.20   4.24   5.28<br>( .126 ) ( .167 ) ( .208 )<br>NOTES:<br>       1  DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.<br>       2  CONTROLLING DIMENSION : INCH. 4L    0.65<br>       3  DIMENSIONS DO NOT INCLUDE MOLD FLASH. © ( .0256 ) [6X]<br>**----- End of picture text -----**<br>


## Micro8 Part Marking Information 

EXAMPLE: THIS IS AN IRF7501 

LOT CODE (XX) DATE CODE (YW) - See table below Y =  YEAR W =  WEEK P =  DESIGNATES LEAD - FREE 7501 PRODUCT (OPTIONAL) PART NUMBER 

|WW =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|WW =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|WW =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|WW =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|WW =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|WW =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|WW =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR||WW =  (27-52) IF PRECEDED BY A LETTER|WW =  (27-52) IF PRECEDED BY A LETTER|WW =  (27-52) IF PRECEDED BY A LETTER|WW =  (27-52) IF PRECEDED BY A LETTER|WW =  (27-52) IF PRECEDED BY A LETTER||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||WORK|||||||WORK||||
||YEAR|Y|WEEK||W|||YEAR|Y|WEEK||W||
||2003<br>2002<br>2001<br>2004|3<br>2<br>1<br>4|03<br>02<br>01<br>04||C<br>B<br>A<br>D|||2002<br>2001<br>2003|B<br>A<br>C|28<br>27<br>29||B<br>A<br>C||
||2005|5||||||2004|D|30||D||
||2006|6||||||2005|E|||||
||2007|7||||||2006|F|||||
||2008|8||||||2007|G|||||
||2009<br>2010|9<br>0|26<br>24<br>25||Z<br>X<br>Y|||2010<br>2008<br>2009|K<br>H<br>J|50||X||
|||||||||||51||Y||
|||||||||||52||Z||



www.irf.com 

7 

## Micro8 Tape & Reel Information 

Dimensions are shown in millimeters (inches) 

**==> picture [210 x 340] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>Ooo oo<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 ) [ FEED DIRECTION<br>7.9 ( .312 )<br> 330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES: 

1.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

2.   CONTROLLING DIMENSION : MILLIMETER. 

NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/04 

www.irf.com 

8 



## Links

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- [Supplier page](https://es.farnell.com/infineon/irf7607trpbf/mosfet-n-ch-20v-6-5a-usoic-8/dp/2579993)
---

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