# Power MOSFET, N Channel, 60 V, 114 A, 3600 µohm, DirectFET ME, Surface Mount

![Product image](https://novapart.co/image/farnell:2710001/)

**URL**: https://novapart.co/products/IRF7580MTRPBF/power-mosfet-n-channel-60-v-114-a-3600-ohm
**SKU**: IRF7580MTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6470
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:114A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0029ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (08-Jul-2021) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | StrongIRFET, DirectFET |
| Qualification | - |
| Power Dissipation | 96W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DirectFET ME |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 114A |
| Drain Source On State Resistance | 3600µohm |
| Gate Source Threshold Voltage Max | 3.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2710001/)

## Strong _IR_ FET™ IRF7580MTRPbF ~~pe~~ 

DirectFET[®] N-Channel Power MOSFET 

## **Application** 

- Brushed motor drive applications 

- BLDC motor drive applications 

- Battery powered circuits 

- Half-bridge and full-bridge topologies 

- Synchronous rectifier applications 

- Resonant mode power supplies 

- OR-ing and redundant power switches 

- DC/DC and AC/DC converters 

- DC/AC inverters 

## **Benefits** 

- Improved  gate, avalanche and dynamic dv/dt ruggedness 

- Fully characterized capacitance and avalanche SOA 

- Enhanced body diode dv/dt and di/dt capability 

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VDSS  60V<br>RDS(on) typ. 2.9m <br>            max  3.6m <br>ID  114A<br>S<br>S S<br>S<br>D D<br>S S<br>G<br>DirectFET [®]<br>ME  ISOMETRIC<br>**----- End of picture text -----**<br>


- Lead-free, RoHS compliant 

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Standard Pack  Orderable Part Number<br>Base part number  Package Type<br>Form  Quantity<br>IRF7580MPbF  DirectFET [®]  ME  Tape and Reel  4800  IRF7580MTRPbF<br>8.0 120<br>ID = 70A 110<br>7.0<br>100<br>6.0 AEtE tet? 90<br>80<br>WEEE L ae<br>5.0 T J  = 125°C 70<br>60<br>4.0 \SeEET TT 50<br>40<br>3.0<br>eee i<br>30<br>2.0 Att T J  = 25°C 20 aX<br>10<br>1.0 0<br>CoP eLe Bae<br>4 6 8 10 12 14 16 18 20 25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>VGS, Gate -to -Source Voltage  (V)<br>ID,  Drain Current (A)<br>)<br> <br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Maximum Drain Current vs. Case Temperature 

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## **Absolute Maximum Ratings** 

|**Symbol**|**Parameter**||||||**Max.**|**Units**|
|---|---|---|---|---|---|---|---|---|
|ID @TC= 25°C|ContinuousDrainCurrent,VGS @10V|V|||||114||
|ID@ TC =100°C Continuous Drain Current, VGS@ 10V||@ 10V|||||72|A|
|IDM|Pulsed Drain Current||||||452||
|PD@TC =25°C<br>Maximum Power Dissipation|||||||96|W|
||Linear DeratingFactor||||||0.78|W/°C|
|VGS|Gate-to-Source Voltage||||||± 20|V|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range||||||-55  to + 150|°C|
|**Avalanche Characteristics**|||||||||
|EAS (Thermally limited)<br>Single Pulse Avalanche Energy<br>81<br>mJ<br>EAS (Thermally limited)<br>Single Pulse Avalanche Energy <br>149<br>IAR<br>Avalanche Current<br>A<br>EAR<br>Repetitive Avalanche Energy<br>mJ<br>See Fig.15,16 , 23a, 23b<br>~~——~~|||||||||
|**Thermal Resistance**|||||||||
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RJA<br>Junction-to-Ambient<br>–––<br>44<br>RJA<br>Junction-to-Ambient<br>12.5<br>–––<br>RJA<br>Junction-to-Ambient<br>20<br>–––<br>°C/W<br>RJC<br>Junction-to-Case<br>–––<br>1.3<br>RJ-PCB<br>Junction-to-PCB Mounted<br>0.75<br>–––<br>~~Se~~|||||||||
|**Static @ TJ = 25°C (unless otherwise specified)**|||||||||
|**Symbol**|**Parameter**|**Min. T**|**Min. Typ. Max. Units**|**. Max. Units**|**. Max. Units**||**Conditions**||
|V(BR)DSS|Drain-to-Source Breakdown Voltage|60|–––|–––|V||VGS= 0V,ID= 250µA||
|V(BR)DSS/TJ|Breakdown Voltage Temp. Coefficient|–––|44|––– mV/°C Reference to 25°C|––– mV/°C Reference to 25°C||––– mV/°C Reference to 25°C,ID= 1.0mA||
|RDS(on)|Static Drain-to-Source On-Resistance|–––|2.9|3.6|m||VGS= 10V,ID= 70A||
|||–––|3.5|–––|m||VGS= 6.0V,ID= 35A||
|VGS(th)|Gate Threshold Voltage|2.1|–––|3.7|V||VDS= VGS,ID= 150µA||
|IDSS|Drain-to-Source Leakage Current|–––|–––|1.0|µA||VDS= 60V,VGS= 0V||
|||–––|–––|150|||VDS= 60V,VGS= 0V,TJ= 125°C||
|IGSS|Gate-to-Source Forward Leakage|–––|–––|100|nA||VGS= 20V||
||Gate-to-Source Reverse Leakage|–––|–––|-100|||VGS= -20V||
|RG|Internal Gate Resistance|–––|0.8|–––|||||



**Notes:** 

-  Mounted on minimum footprint full size board with metalized back and with small clip heatsink. 

      -  TC measured with thermocouple mounted to top (Drain) of part. 

-  Used double sided cooling , mounting pad with large heatsink. 

   -  Surface mounted on 1 in. square Cu board  (still air). 

 Mounted to a PCB with small clip heatsink (still air) 

 Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 

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|**Dynamic @ TJ = 25°C (unless otherwise specified)**|
|---|
|**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**<br>gfs<br>Forward Transconductance<br>190<br>–––<br>–––<br>S<br>VDS =10V, ID =70A<br>Qg<br>Total Gate Charge<br>–––<br>120<br>180<br>nC<br>ID= 70A<br>Qgs<br>Gate-to-Source Charge<br>–––<br>32<br>–––<br>VDS=30V<br>Qgd<br>Gate-to-Drain ("Miller") Charge<br>–––<br>36<br>–––<br>VGS= 10V<br>Qsync<br>Total Gate Charge Sync. (Qg -Qgd)<br>–––<br>84<br>–––<br>td(on)<br>Turn-On Delay Time<br>–––<br>20<br>–––<br>ns<br>VDD= 30V<br>tr<br>Rise Time<br>–––<br>38<br>–––<br>ID= 30A<br>td(off)<br>Turn-Off Delay Time<br>–––<br>53<br>–––<br>RG= 2.7<br>tf<br>Fall Time<br>–––<br>21<br>–––<br>VGS =10V<br>Ciss<br>Input Capacitance<br>–––6510–––<br>pF<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>610<br>–––<br>VDS= 25V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>360<br>–––<br>ƒ=1.0MHz<br>Cosseff.(ER)Effective Output Capacitance(EnergyRelated)–––<br>620<br>–––<br>VGS= 0V,VDS= 0V to 48V<br>Cosseff. (TR) Effective Output Capacitance (Time Related)<br>–––<br>770<br>–––<br>VGS= 0V, VDS= 0V to 48V<br>~~a~~<br>~~a——————~~<br>~~ee~~<br>~~a————_————~~<br>~~ee~~<br>~~ee————er ee~~<br>~~es~~<br>~~ee~~<br>~~a rs~~|
|**Diode Characteristics**|
|D<br>**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**<br>IS<br>Continuous Source Current<br>–––   –––   105<br>A<br>MOSFET symbol<br>(BodyDiode)<br>showing  the<br>~~ee~~<br>~~I~~<br>~~(QD (OU (OR~~<br>~~a~~|
|G<br>ISM<br>Pulsed Source Current<br>–––   –––   460<br>integral reverse|
|S<br>(Body Diode)<br>p-n junction diode.<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.2<br>V<br>TJ= 25°C,IS= 70A, VGS= 0V<br>dv/dt<br>Peak Diode Recovery<br>–––<br>4.1<br>–––<br>V/ns TJ=150°C,IS=70A, VDS= 60V<br>trr<br>Reverse Recovery Time<br>–––<br>41<br>–––<br>ns TJ= 25°CVR= 51V,<br>–––<br>44<br>–––<br>TJ= 125°C IF= 70A<br>Qrr<br>Reverse Recovery Charge<br>–––<br>55<br>–––<br>TJ= 25°C<br>di/dt = 100A/µs<br>–––<br>71<br>–––<br>TJ= 125°C<br>IRRM<br>Reverse RecoveryCurrent<br>–––<br>2.5<br>–––<br>A<br>TJ= 25°C<br>nC<br>~~es~~<br>~~nn (OD ID I~~<br>~~a~~<br>~~nD~~<br>~~TD ID I I~~<br>~~se~~<br>~~ee~~|



## **Notes:** 

- Repetitive rating;  pulse width limited by max. junction temperature. 

-   Limited by TJ max, starting TJ = 25°C, L = 34µH 

- RG = 50, IAS = 70A, VGS =10V. 

-   ISD ≤ 70A, di/dt ≤ 980A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. 

- Pulse width ≤ 400µs; duty cycle ≤ 2%. 

- Coss eff. (TR) is a fixed capacitance that gives the 

   - same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

- Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

- When mounted on 1" square PCB (FR-4 or G-10 

   - Material). For recommended footprint and soldering techniques refer to application note #AN-994. 

-  R is measured at TJ approximately 90°C. 

-  Limited by TJ max, starting TJ = 25°C, L= 1mH, RG = 50, IAS = 17A, VGS =10V. 

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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>100 6.0V 6.0V<br>5.5V 5.5V<br>ZL 5.0V 100 pA 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br>10<br>4.5V<br>10<br>1 4.5V<br>Z f=<br>60µs PULSE WIDTH 60µs PULSE WIDTH<br>Tj = 25°C Tj = 150°C<br>0.1 1<br>acc ce eT<br>0.1 1 10 100 1000 0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics  Fig 4.   Typical Output Characteristics<br>1000 2.5<br>ID = 70A<br>VGS = 10V<br>2.0<br>100 TJ = 150 ° C<br>T J  = 25°C 1.5<br>10 ae TL<br>1.0<br>Ly TT<br>V DS  = 25V<br>60µs PULSE WIDTH<br>1.0 HLS 0.5 HED cAUI<br>|| ) AT<br>3 4 5 6 7 8 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 5.   Typical Transfer Characteristics  Fig 6.   Normalized On-Resistance vs. Temperature<br>100000 14.0<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = C gs + Cgd,  C ds SHORTED ID= 70A<br>C rss    = C gd  12.0 VDS= 48V<br>Coss   = Cds + Cgd VDS= 30V<br>10.0<br>10000 VDS= 12V<br>Ciss<br>8.0<br>Coss 6.0<br>1000 C rss<br>4.0<br>2.0<br>100 Te(RSH 0.0 tase!EERRREE<br>1 10 100 0 20 40 60 80 100 120 140 160<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Output Characteristics 

**Fig 6.** Normalized On-Resistance vs. Temperature 

**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 8.** Typical Gate Charge vs. Gate-to-Source Voltage 

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## ~~LR~~ 

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1000<br>100 Ty]<br>TJ = 150°C<br>10<br>TJ = 25°C<br>aay ay,<br>1<br>Evaeaee<br>0.1 [| V GS  = 0V<br>VAnyonn<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>VSD, Source-to-Drain Voltage (V)<br>Fig 9.   Typical Source-Drain Diode Forward Voltage<br>76<br>Id = 1.0mA<br>a<br>74<br>A<br>72<br>Ad<br>70<br>it<br>68<br>Ta EL<br>ALLELE<br>66<br>LETTE ELL<br>64<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Temperature ( °C )<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Source-Drain Diode Forward Voltage 

**Fig 11.** Drain-to-Source Breakdown Voltage 

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100µsec<br>100 1msec<br>10<br>OPERATION IN<br>THIS AREA<br>LIMITED BY R DS(on)<br>1<br>10msec<br>0.1 Tc = 25°C sy<br>Tj = 150°C DC<br>Single Pulse<br>0.01<br>0.1 1 Seine 10<br>VDS, Drain-to-Source Voltage (V)<br>Fig 10.   Maximum Safe Operating Area<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>-10 0 10 20 30 40 50 60<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


**Fig 12.** Typical Coss Stored Energy 

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7.0<br>6.0 Vgs = 5.5V<br>TT Vgs = 6.0V TTE<br>Vgs = 7.0V<br>Vgs = 8.0V<br>5.0 Vgs = 10V<br>| Sue<br>4.0 LUSCHPree YT NAXKN ES<br>3.0 FECLEASSEP<br>SoS<br>2.0 PESFECETLT<br>0 20 40 60 80 100 120 140 160 180 200<br>ID, Drain Current (A)<br>)<br><br> m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

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10<br>1<br>D = 0.50<br>0.20<br>0.10<br>0.1<br>SS 0.05<br>0.02<br>0.01<br>0.01<br>Notes:<br>=e: SINGLE PULSE alll BUN BE nl<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>2. Peak Tj = P dm x Zthjc + Tc<br>2241<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Allowed avalanche Current vs avalanche<br>100 AE CFR pulsewidth, tav, assuming  Tstart =25°C (Single Pulse) Tj  = 125°C and<br>SSS ol<br>10<br>Sa<br>1<br>BEAN<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming j = 25°C and<br>Tstart = 125°C.<br>a aai<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02<br>tav (sec)<br>Thermal Response ( Z  thJC ) °C/W<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Avalanche Current vs. Pulse Width 

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100<br>TOP          Single Pulse<br>BOTTOM   1.0% Duty Cycle<br>80 I D  = 70A<br>cL<br>60<br>NOT<br>40<br>NNT<br>20<br>INANE<br>UL TANS<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy vs. Temperature 

**Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)** 

- 1.Avalanche failures assumption: 

   - Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). 

   - tav = Average time in avalanche. 

   - D = Duty cycle in avalanche =  tav ·f 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC 

      - Iav = 2T/ [1.3·BV·Zth] 

      - EAS (AR) = PD (ave)·tav 

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4.0<br>3.5<br>TRYST<br>3.0<br>SW<br>PK<br>ID = 150µA<br>2.5 ID = 250µA<br>ID = 1.0mA SST]<br>ID = 1.0A<br>2.0 PERS<br>TLEEN<br>1.5<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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20<br>IF = 46A<br>VR = 51V<br>15 T J = 25°C TT<br>TJ = 125°C<br>|,<br>|<br>10<br>a<br>5<br>EPZen<br>Lan<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

**Fig 18.** Typical Recovery Current vs. dif/dt 

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25<br>IF = 70A<br>VR = 51V<br>20<br>TJ = 25°C<br>TJ = 125°C<br>15 iG| 7<br>10 TT IA<br>5<br>PZ<br>Lanne<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


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300<br>IF = 46A<br>VR = 51V<br>250<br>TJ = 25°C<br>TJ = 125°C<br>200 eaen| iy<br>150 TT<br>100<br>TT<br>EAnnn<br>50<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

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300<br>IF = 70A<br>VR = 51V<br>250<br>TJ = 25°C<br>TJ = 125°C<br>Hy<br>200<br>A<br>150 TT | 7<br>Zan<br>100<br>E~ Annn<br>50<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

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**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>NW\= IAS - [V][DD]<br>20V<br>tp 0.01<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>< tp ><br>IAS<br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

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VDD<br>**----- End of picture text -----**<br>


**Fig 24b.** Switching Time Waveforms 

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Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

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## **DirectFET[®] Board Footprint, ME Outline** 

## **(Medium Size Can, E-Designation)** 

Please see DirectFET[®] application note AN-1035 for all details regarding the assembly of DirectFET[®] . This includes all recommendations for stencil and  substrate designs. 

**==> picture [364 x 212] intentionally omitted <==**

**----- Start of picture text -----**<br>
G = GATE<br>D = DRAIN<br>S = SOURCE<br>\<br>D D<br>G<br>S S<br>'<br>\<br>S S S<br>D D<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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IRF7580MTRPbF ~~LT~~ 

## **DirectFET[®] Outline Dimension, ME Outline** 

## **(Medium Size Can, E-Designation)** 

Please see DirectFET[®] application note AN-1035 for all details regarding the assembly of DirectFET[®] . This includes all recommendations for stencil and  substrate designs. 

**==> picture [417 x 260] intentionally omitted <==**

**----- Start of picture text -----**<br>
a | DIMENSIONS<br>METRIC IMPERIAL<br>L CODE MIN MAX MIN MAX<br>! = A 6.25 6.35 0.246 0.250<br>A B 4.80 5.05 0.189 0.199<br>C 3.85 3.95 0.152 0.156<br>D 0.35 0.45 0.014 0.018<br>A E 0.58 0.62 0.023 0.024<br>i ; F 1.08 1.12 0.043 0.044<br>ey a , A G 0.93 0.97 0.037 0.038<br>H 1.28 1.32 0.050 0.052<br>! Mtn‘Oo “am “mee ! J 0.38 0.42 0.015 0.017<br>J1 0.58 0.62 0.023 0.024<br>K 0.88 0.92 0.035 0.036<br>L 2.08 2.12 0.082 0.083<br>! mei- =~ aa<br>! L1 3.63 3.67 0.143 0.144<br>M 0.59 0.70 0.023 0.028<br>N 0.02 0.08 0.0008 0.003<br>P 0.08 0.17 0.003 0.007<br>a !<br>Dimensions are shown in<br>millimeters (inches)<br>**----- End of picture text -----**<br>


## **DirectFET[® ] Part Marking** 

**==> picture [233 x 163] intentionally omitted <==**

**----- Start of picture text -----**<br>
LOGO<br>GATE MARKING<br>PART NUMBER<br>BATCH NUMBER<br>DATE CODE<br>Line above the last character of<br>the date code indicates "Lead-Free"<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

10 

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**DirectFET[® ] Tape & Reel Dimension (Showing component orientation).** 

NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF7580MTRPBF). For 1000 parts on 7" reel, order   IRF7580MTR1PBF 

|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF7580MTRPBF). For 1000 parts on 7"<br>reel, order   IRF7580MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF7580MTRPBF). For 1000 parts on 7"<br>reel, order   IRF7580MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF7580MTRPBF). For 1000 parts on 7"<br>reel, order   IRF7580MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF7580MTRPBF). For 1000 parts on 7"<br>reel, order   IRF7580MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF7580MTRPBF). For 1000 parts on 7"<br>reel, order   IRF7580MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF7580MTRPBF). For 1000 parts on 7"<br>reel, order   IRF7580MTR1PBF|
|---|---|---|---|---|---|
|**REEL DIMENSIONS**<br>MAX<br>IMPERIAL<br>MIN<br>STANDARD OPTION**(QTY 4800)**<br>CODE<br>MAX<br>MIN<br>METRIC<br>MIN<br>TR1 OPTION**(QTY 1000)**<br>MAX<br>MIN<br>METRIC<br>MAX<br>IMPERIAL||||||
|A|330.0|N.C<br>N.C<br>12.992<br>177.77|N.C<br>177.77|6.9|N.C|
|B|20.2|N.C<br>N.C<br>0.795<br>19.06|N.C<br>19.06|0.75|N.C|
|C|12.8|0.520<br>13.2<br>0.504<br>13.5|12.8<br>13.5|0.53|0.50|
|D|1.5<br>D|N.C<br>N.C<br>0.059|0.059<br>N.C<br>1.5|0.059|N.C|
|E|100.0|N.C<br>N.C<br>3.937<br>58.72|N.C<br>58.72|2.31|N.C|
|F|N.C|0.724<br>18.4<br>N.C<br>N.C|13.50<br>N.C|N.C|0.53|
|G|12.4<br>G|0.567<br>14.4<br>0.488<br>11.9|12.01<br>11.9|0.47|N.C|
|H|11.9<br>H|0.606<br>15.4<br>0.469<br>11.9|12.01<br>11.9|0.47|N.C|



## LOADED TAPE FEED DIRECTION 

|||DIMENSIONS|DIMENSIONS|DIMENSIONS||
|---|---|---|---|---|---|
|||METRIC||IMPERIAL||
|NOTE: CONTROLLING<br>DIMENSIONS IN MM|CODE|MIN|MAX|MIN|MAX|
||A|7.90|8.10|0.311|0.319|
||B|3.90|4.10|0.154|0.161|
||C|11.90|12.30|0.469|0.484|
||D|5.45|5.55|0.215|0.219|
||E|5.10|5.30|0.201|0.209|
||F|6.50|6.70|0.256|0.264|
||G|1.50|N.C|0.059|N.C|
||H|1.50|1.60|0.059|0.063|



Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

11 www.irf.com        © 2015 International Rectifier Submit Datasheet Feedback                            May 14, 2015 ~~=°°.°°” —~~ 

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## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F††guidelines)||
|**Moisture Sensitivity Level**|DFET 1.5|MSL1<br>(per JEDEC J-STD-020D††)|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site - 

- http://www.irf.com/product info/reliability 

- ††      Applicable version of JEDEC standard at the time of product release. 

- Industrial qualification standards except autoclave test conditions. 

## **Revision History** 

|**Revision History**|**Revision History**|
|---|---|
|**Date**|**Comments**|
|3/25/2014|<br>Corrected figure 6 - Normalized On-Resistance vs. Temperaturegraph onpage 4.|
|2/19/2015|Updated EAS (L =1mH)= 149mJ  on page 2<br>Updated note 9  “Limited by TJmax, starting TJ= 25°C, L = 1mH, RG= 50, IAS= 17A, VGS=10V” on page 3|
|05/14/2015|<br>Updated registered trademark from  DirectFETTMto DirectFET®onpage 1,9 and 10.|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

12 ~~_~~ 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF7580MTRPBF/power-mosfet-n-channel-60-v-114-a-3600-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf7580mtrpbf/mosfet-n-ch-60v-114a-directfet/dp/2710001)
---

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