# Power MOSFET, N Channel, 80 V, 9.3 A, 0.015 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:1013466/)

**URL**: https://novapart.co/products/IRF7493PBF/power-mosfet-n-channel-80-v-93-a-0015-ohm-soic
**SKU**: IRF7493PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5090
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 2.5W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.015ohm |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 80V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 9.3A |
| Drain Source On State Resistance | 0.015ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1013466/)

## IRF7493PbF 

HEXFET ® Power MOSFET 

## **Applications** 

High frequency DC-DC converters Lead-Free 

|**VDSS**|**RDS(on) max**|**Qg (typ.)**|
|---|---|---|
|**80V**|**15m @VGS=10V**|**35nC**|



## **Benefits** 

Low Gate-to-Drain Charge to Reduce Switching Losses 

Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) 

Fully Characterized Avalanche Voltage and Current 

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A<br>A<br>S 1 8 D<br>S 2 7 D<br>S 3 6 D<br>G 4 5 D<br>SO-8<br>Top View<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-to-Source Voltage|80<br>~~——~~|V<br>~~——~~<br>~~ae~~|
|VGS|Gate-to-Source Voltage<br>~~a~~<br>~~ae~~|± 20<br>~~——~~<br>~~a~~<br>~~ae~~||
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V<br>~~a~~<br>~~ae~~|9.3<br>~~a~~<br>~~ae~~|A<br>~~ae~~|
|ID@ TC= 70°C|Continuous Drain Current, VGS@ 10V<br>~~ae~~|7.4<br>~~ae~~||
|IDM|Pulsed Drain Current<br>~~ae~~|74<br>~~ae~~||
|PD@TC= 25°C<br>~~a~~|Maximum Power Dissipation<br>~~ae~~<br>~~oo—~~<br>~~a~~|2.5<br>~~ae~~<br>~~—~~<br>|W<br>~~ae~~<br>~~oe~~<br>|
|PD@TC= 70°C<br>~~a~~|Maximum Power Dissipation<br>~~oo—~~<br>~~a~~|1.6<br>~~—~~<br>||
|~~a~~|Linear Derating Factor<br>~~oo—~~<br>~~a~~|0.02<br>~~—~~<br><br>~~ee~~|W/°C<br>~~oe~~<br><br>~~ee~~|
|TJ<br>TSTG<br>|Operating Junction and<br>Storage Temperature Range<br>~~oo—~~<br>~~ee~~|-55  to + 150<br>~~—~~<br>~~ee~~<br>~~ee~~|°C<br>~~oe~~<br>~~ee~~<br>~~ee~~|



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Lead|–––|20||
|RθJA|Junction-to-Ambient|–––|50||



> Notes ® hrough 6) are on page 9 

www.irf.com 

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## IRF7493PbF 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>**Conditions**|
|---|---|
|BVDSS<br>∆ΒVDSS/∆TJ<br>RDS(on)<br>VGS(th)<br>IDSS<br>IGSS|Drain-to-Source Breakdown Voltage<br>80<br>–––<br>–––<br>V<br>Breakdown Voltage Temp. Coefficient<br>–––<br>0.074<br>–––<br>mV/°C<br>Static Drain-to-Source On-Resistance<br>–––<br>11.5<br>15<br>mΩ<br>Gate Threshold Voltage<br>2.0<br>–––<br>4.0<br>V<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>µA<br>–––<br>–––<br>250<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>200<br>nA<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-200<br>VGS= 0V, ID= 250µA<br>Reference to 25°C, ID= 1mA<br>VGS= 10V, ID= 5.6A<br>VDS= VGS, ID= 250µA<br>VDS= 80V, VGS= 0V<br>VDS= 64V, VGS= 0V, TJ= 125°C<br>VGS= 20V<br>VGS= -20V<br>~~es~~<br>~~en Gs~~<br>~~es~~<br>~~Gs GO~~<br>~~Ps~~<br>~~ss~~<br>~~Gn~~<br>~~Be~~<br>~~OE~~<br>~~**|**~~<br>~~C~~~~**e**~~<br>~~e~~<br>~~|TT~~|
|**Dynamic @ TJ = 25°C(unless otherwise specified)**||
|gfs|Forward Transconductance<br>13<br>–––<br>–––<br>S<br>VDS= 15V, ID= 5.6A|
|Qg<br>Qgs<br>Qgd<br>td(on)<br>tr<br>td(off)<br>tf<br>Ciss<br>Coss<br>Crss<br>Coss<br>Coss<br>Crsseff.|Total Gate Charge<br>–––<br>35<br>53<br>Gate-to-Source Charge<br>–––<br>5.7<br>–––<br>Gate-to-Drain Charge<br>–––<br>12<br>–––<br>Turn-On DelayTime<br>–––<br>8.3<br>–––<br>Rise Time<br>–––<br>7.5<br>–––<br>Turn-Off DelayTime<br>–––<br>30<br>–––<br>ns<br>Fall Time<br>–––<br>12<br>–––<br>Input Capacitance<br>–––<br>1510<br>–––<br>Output Capacitance<br>–––<br>320<br>–––<br>pF<br>Reverse Transfer Capacitance<br>–––<br>130<br>–––<br>Output Capacitance<br>–––<br>1130<br>–––<br>Output Capacitance<br>–––<br>210<br>–––<br>Effective Output Capacitance<br>–––<br>320<br>–––<br>RG= 6.2Ω<br>VGS= 10V<br>VGS= 0V, VDS= 0V to 64V<br>VGS= 10V<br>VGS= 0V<br>VDS= 25V<br>VGS= 0V, VDS= 1.0V,ƒ= 1.0MHz<br>VGS= 0V, VDS= 64V,ƒ= 1.0MHz<br>VDD= 40V,<br>ID= 5.6A<br>ƒ= 1.0MHz<br>VDS= 40V<br>ID= 5.6A<br>~~es~~<br>~~ee es~~<br>~~ee~~<br>~~ee Ge~~<br>~~es~~<br>~~**ee**~~<br>~~ee~~<br>~~Ge~~<br>®<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee Ge~~<br>~~es~~<br>~~ee ee~~<br>~~ee~~<br>~~ee es~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee Ge~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~**ee** G~~~~**e**~~<br>~~es~~<br>~~e~~<br>~~©~~|
|**Avalanche Characteristics**||
||**Parameter**<br>**Units**<br>**Max.**<br>**Typ.**|
|EAS<br>IAR|Single Pulse Avalanche Energy<br>mJ<br>Avalanche Current<br>A<br>180<br>5.6<br>–––<br>–––<br>~~PO~~<br>~~ee~~<br>~~Gs~~|
|**Diode Characteristics**||
||**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>**Conditions**|
|IS|Continuous Source Current<br>–––<br>–––<br>9.3<br>MOSFET symbol|
||(Body Diode)<br>A<br>showing  the|
|ISM|Pulsed Source Current<br>–––<br>–––<br>74<br>integral reverse|
||(Body Diode)<br>p-n junction diode.|
|VSD<br>trr<br>Qrr|Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>Reverse RecoveryTime<br>–––<br>37<br>56<br>ns<br>Reverse RecoveryCharge<br>–––<br>52<br>78<br>nC<br>TJ= 25°C, IF= 5.6A, VDD= 15V<br>di/dt = 100A/µs<br>TJ= 25°C, IS= 5.6A, VGS= 0V<br>~~es~~<br>~~Sennen~~<br>~~ne el een~~<br>~~eeGe~~<br>~~©~~|



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## IRF7493PbF 

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100<br>-—|—arete top sv<br>merrr 2746 40V=v<br>10<br>Parry— ®0rtom 38v:<br>1 | ll<br>A 3.5V CH<br>eee) —— | ee<br>0.1 edS e<br>po a at<br>De ee LF<br>20µs PULSE WIDTH<br>Tj = 25°C<br>0.01<br>nil TT<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

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100.00<br>a ee ee ee © eee eee<br>ee es ee ee. eee eee<br>TJ = 150°C<br>10.00<br>Se Sy, ee es ee eee<br>ee ey 2 ee ee ee ee<br>T = 25°C<br>J<br>1.00<br>pif py |<br>Se) ee es ee ee ee<br>EE ee ee ee ee eee<br>ee ee ee ee ee<br>V = 25V<br>DS<br>20µs PULSE WIDTH<br>0.10<br>3.0 4.0 5.0 6.0<br>VGS, Gate-to-Source Voltage (V)<br>)(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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100<br>-—— FHgeo Top = 15v<br>amaeny -ZomeniiillZee 40Vot<br>10 no” E / oaeeH eorrom 3sv:<br>3.5V<br>WY || one<br>1 2 0 |<br>ey QO eeee<br>e eeer een<br>PE EEE<br>| | | |<br>20µs PULSE WIDTH<br>Tj = 150°C<br>0.1<br>PTE Et ul<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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2.0<br>ID = 9.3A<br>V = 10V<br>GS<br>1.5<br>1.0<br>YZ<br>|<br>LF<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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## IRF7493PbF 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>— Ciss     = C gs  + Cgd,   C ds     SHORTED<br>Crss    = C gd<br>10000 Coss   = C ds + Cgd<br>e e ee<br>es ee ee ee<br>Ciss<br>e y ||<br>1000<br>e Coss e<br>S e<br>| | | Te<br>Crss<br>100 eeE T eTennai<br>es sO 0<br>ee ell<br>10<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

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100.0<br>ee ee 4 A<br>T = 150°C<br>J<br>10.0<br>ee ee ee<br>a<br>a a ee<br>1.0 es ee ee<br>SS T = 25°C<br>—— J<br>e e<br>fp V = 0V<br>GS<br>0.1 ee<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, Source-toDrain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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20<br>ID= 5.6A<br>VDS= 64V<br>16 VDS= 40V<br>VDS= 16V<br>Y<br>12 VYWAWa<br>Mf<br>8 Lp<br>WsY<br>40 J) Z |) 4) 4]<br>0 10 20 30 40 50 60<br> QG  Total Gate Charge (nC)<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br>1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>Sai er<br>100<br>N<br>10 aU | TPS EE LUT<br>100µsec<br>ee<br>Se a<br>1 ETA TIINNN TIMEEST! 1msec<br>See Sec ee et tees<br>Tc = 25°CTj = 150°C eFe H 10msec<br>Single Pulse<br>0.1 0<br>0 1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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## IRF7493PbF 

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10<br>Rp<br>8<br>6 Re | -<br>4 \ Pulse Width ≤ 0.1 %≤ 1  ys<br>P t tT IN ie<br>2 E EN Fig 10a.   Switching Time Test Circuit _<br>VDS<br>0 90%<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>Fig 9.   Ambient TemperatureMaximum Drain Current Vs. 10%VGS /|\ re \ >|ee\leK ><br>td(on) tr td(off) tf<br>Fig 10b.   Switching Time Waveforms<br>100<br>D = 0.50<br>e errt<br>10 0.20<br>0.10<br>S c ce ee ee ee eee ee eee |<br>S 0.05 T HHT<br>SP arcet<br>1 S a 0.02 eee eeealam<br>0.01<br>T ee<br>aa S e| ee ee ee<br>a | | |<br>0.1 e eeeen<br>SINGLE PULSE<br>( THERMAL RESPONSE )<br>ae en<br>aa a | a| |<br>0.01<br>1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>ID , Drain Current (A)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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## IRF7493PbF 

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0.013<br>0.030<br>0.012 0.020<br>ae<br>V = 10V<br>GS<br>ae ID = 5.6A<br>0.011 0.010<br>ri |<br>0 20 40 60 80 4.0 8.0 12.0 16.0<br>ID , Drain Current (A) VGS, Gate -to -Source Voltage  (V)<br>Fig 12.    On-Resistance Vs. Drain Current Fig 13.    On-Resistance Vs. Gate Voltage<br>Current Regulator<br>Same Type as D.U.T.<br>QG<br>50KΩ<br>12V .2µF<br>.3µF QGS QGD<br>D.U.T. +-VDS VG 500<br>VGS<br>3mA Charge<br>IG ID 400<br>Current Sampling Resistors<br>Fig 14a&b.  eo  Basic Gate Charge Test Circuit 300 E os<br>N ee<br>and Waveform<br>200<br>R EE<br>15V<br>100<br>V(BR)DSS<br>tp VDS L DRIVER<br>R G D.U.T + 0<br>IAS - [V][DD] A 25 ||| 50 75 SSA 100 125 150<br>20V<br>I AS an tp 0.01Ω S Starting TJ, Junction Temperature (°C) G Hm<br>)Ω<br>RDS (on) , Drain-to-Source On Resistance (<br>EAS, Single Pulse Avalanche Energy (mJ)<br>)Ω<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


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500<br>400<br>300 E os<br>N ee<br>200<br>R EE<br>100<br>0<br>||| SSA<br>25 50 75 100 125 150<br>S Starting TJ, Junction Temperature (°C) G Hm<br>**----- End of picture text -----**<br>


**Fig 15a&b.** Unclamped Inductive Test circuit and Waveforms 

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**Fig 15c.** Maximum Avalanche Energy Vs. Drain Current 

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## IRF7493PbF 

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**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— D = —— Period<br>) [©)]    • Circuit Layout Considerations ) t V t GS=10V<br>| — -  •   GroundLow StrayPlane Inductance<br> •   Low Leakage Inductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [1] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 a VDD<br>ma<br>•   Re-Applied<br>Ro ) •  dv/dtDriver controlledsame type byas RgD.U.T. Vpp + Voltage Body Diode  Forward Drop<br>•   Isp controlled by Duty Factor "D" - @ Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e e I  ee SD<br>**----- End of picture text -----**<br>


**Fig 16.** 

Recovery dv/dt Test Circuit or N-Channel HEXFET ® Power MOSFETs 

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**----- Start of picture text -----**<br>
Id<br>Vds f'<br>1 Vgs<br>I<br>1<br>1<br>1<br>1<br>I<br>1<br>|<br>1<br>H \<br>Vgs(th) !! I\<br>| I<br>! \<br>H \<br>H \<br>1 H ' ' |<br>><1)ro dt i@@me ><br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 17.** Gate Charge Waveform 

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## IRF7493PbF 

## **SO-8 Package Outline** 

Dimensions are shown in millimeters (inches) 

**==> picture [373 x 336] intentionally omitted <==**

**----- Start of picture text -----**<br>
INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>non 8 7 6 5 ff ee cb .0075.013 .0098.020 ee 0.190.33 0.250.51 ee<br>ra E : 6 H enEF D .189 .1968 4.80 5.00<br>0.25 [.010]  A E .1497 .1574 3.80 4.00<br>1 2 3 4<br>e .050  BASIC 1.27  BASIC<br>—— en<br>e1 .025  BASIC 0.635  BASIC<br>TOT TT | aen ee ee<br>H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X oH e he esPE L .016 .050 0.40 1.27<br>y  0°  8°  0°  8°<br>es<br>e1 K x 45°<br>A<br>= FL C nai<br>y<br>JLae 8X b A1 | : 0.10 [.004]  ft M y 8X L 8X c 7)<br>fe. 0.25 [.010]  @ C TTI A B 7<br>FOOTPRINT<br>NOTES:<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>[rT]<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. | “Wood [|]<br>6.46 [.255]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>     A SUBSTRATE.<br>| 0003<br>3X 1.27 [.050] Ka ok<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## **SO-8 Part Marking** 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

DATE CODE (YWW) 

XXXX INTERNATIONAL F7101 ~~_~~ RECTIFIERLOGO TE EE 

P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y =  LAST DIGIT OF THE YEAR WW =  WEEK A =  ASSEMBLY SITE CODE LOT CODE 

PART NUMBER 

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8 

## IRF7493PbF 

## **SO-8 Tape and Reel** 

Dimensions are shown in millimeters (inches) 

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**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>oO66) fF<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) | FEED DIRECTION a<br>NOTES:<br>**----- End of picture text -----**<br>


1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

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**----- Start of picture text -----**<br>
3.   OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>**----- End of picture text -----**<br>


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 330.00<br>(12.992)<br>  MAX.<br>SY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 12mH RG = 25Ω, IAS = 5.6A. 

When mounted on 1 inch square copper board 

Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS 

Pulse width ≤ 300µs; duty cycle ≤ 2%. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/04 

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---

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