# Power MOSFET, N Channel, 100 V, 5.4 A, 0.039 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2803412RL/)

**URL**: https://novapart.co/products/IRF7490TRPBF/power-mosfet-n-channel-100-v-54-a-0039-ohm-soic
**SKU**: IRF7490TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3230
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:5.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 5.4A |
| Drain Source On State Resistance | 0.039ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2803412RL/)

## IRF7490PbF 

## HEXFET ® Power MOSFET 

## **Applications** 

High frequency DC-DC converters Lead-Free 

**VDSS RDS(on) max Qg 100V 39m @VGS=10V 37nC** 

## **Benefits** 

Low Gate-to-Drain Charge to Reduce Switching Losses 

Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) 

Fully Characterized Avalanche Voltage and Current 

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## **Absolute Maximum Ratings** 

|**Symbol**<br>a<br>~~a~~<br>~~RR~~|**Parameter**<br>~~ee~~<br>~~a~~<br>|**Max.**<br>~~i~~<br>|**Units**<br>~~i~~<br>|
|---|---|---|---|
|VDS<br>~~—~~<br>~~a~~<br>~~RR~~|Drain-Source Voltage<br>~~ee~~<br>~~a~~<br>|100<br>~~i~~<br>|V<br>~~i~~<br><br>~~ie~~|
|VGS<br>~~—~~<br>~~a~~<br>~~RR~~<br>~~a~~<br>~~Nee~~|GSGate-to-Source Voltage<br>± 20<br>~~ee~~<br>~~a~~<br><br>~~a~~<br>|± 20<br>~~i~~<br><br>~~ie~~||
|ID@ TA= 25°C<br>~~a~~<br>~~RR—————————~~<br>~~a~~<br>~~Nee~~|Continuous Drain Current, VGS@ 10V<br>~~ee~~<br>~~a~~<br>~~—————————~~<br>~~a~~<br>|5.4<br>~~i~~<br>~~—————————~~<br>~~ie~~|A<br>~~i~~<br>~~—————————~~<br>~~ie~~|
|ID@ TA= 70°C<br>~~a~~<br>~~RR—————————~~<br>~~a~~<br>~~Nee~~|Continuous Drain Current, VGS@ 10V<br>~~ee~~<br>~~a~~<br>~~—————————~~<br>~~a~~<br>|4.3<br>~~i~~<br>~~—————————~~<br>~~ie~~||
|IDM<br>~~—————————~~<br>~~a~~<br>~~Nee~~|Pulsed Drain Current<br>~~—————————~~<br>~~a~~<br>|43<br>~~—————————~~<br>~~ie~~||
|PD@TA= 25°C<br>~~a~~<br>~~Nee~~|Maximum Power Dissipation<br>~~a~~<br>|2.5<br>~~ie~~|W<br>~~ie~~|
|PD@TA= 70°C<br>~~a~~<br>~~Nee~~|Maximum Power Dissipation<br>~~a~~<br>|1.6<br>~~ie~~||
|Linear Deratin<br>~~a~~<br>~~Neeapf~~|Linear DeratingFactor                                                                     20                                 mW/°C<br>~~a~~<br>~~pf~~|Factor                                                                     20                                 mW/°C<br>~~ie~~|Factor                                                                     20                                 mW/°C<br>~~ie~~|
|TJ<br>TSTG<br>~~apf~~|Operating Junction and<br>Storage Temperature Range<br>~~pf~~|-55  to + 150|°C|
|~~pf~~|Soldering Temperature, for 10 seconds<br>~~pf~~|300 (1.6mm from case )||



## **Thermal Resistance** 

|~~es~~|||||
|---|---|---|---|---|
|**Symbol**<br>~~es~~<br>~~SS~~|**Parameter**|**Typ.**|**Max.**|**Units**|
|RθJL<br>~~es~~<br>~~SS~~<br>rs|Junction-to-Drain Lead<br>nk~~©~~|–––|20|°C/W|
|RθJA<br>~~SS~~<br>rs|Junction-to-Ambient<br>nk~~©~~|–––|50||



> Notes ® hrough ® are on page 9 www.irf.com 

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## IRF7490PbF 

**Static @ TJ = 25°C (unless otherwise specified)** 

|||~~ee~~|||||
|---|---|---|---|---|---|---|
||**Parameter**<br>ee|**Min. **<br>ee<br>~~ee~~|**Typ. **<br>ee|**Max.**<br>ee|**Units**<br>ee|**Conditions**|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~ee~~|100<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= 250µA|
|∆V(BR)DSS/∆TJ|JBreakdown Voltage Temp. Coefficient –––     0.11    –––     V/°C    Reference to 25°C, I<br>~~a~~|–––     0.11    –––     V/°C    Reference to 25°C, I|–––     0.11    –––     V/°C    Reference to 25°C, I|–––     0.11    –––     V/°C    Reference to 25°C, I|–––     0.11    –––     V/°C    Reference to 25°C, I|–––     0.11    –––     V/°C    Reference to 25°C, ID= 1mA<br>®|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~es~~|–––<br>~~es~~|33|39|mΩ|VGS= 10V, ID= 3.2A<br>@|
|VGS(th)|Gate Threshold Voltage<br>~~ee~~|2.0<br>~~ee~~|–––<br>~~ee~~|4.0<br>~~ee~~|V<br>~~ee~~|VDS= VGS, ID= 250µA|
|IDSS|Drain-to-Source Leakage Current<br>~~er~~<br>~~**|**~~|–––<br>~~er~~<br>~~**|**~~|–––<br>~~er~~|20<br>~~er~~|µA<br>~~er~~<br>||VDS= 100V, VGS= 0V|
|||–––<br>~~er~~<br>~~**|**~~|–––<br>~~er~~<br>||250<br>~~er~~<br>|||VDS= 80V, VGS= 0V, TJ= 125°C|
|IGSS|Gate-to-Source Forward Leakage<br>~~**|**~~|–––<br>~~**|**~~<br>~~fT~~|–––<br>~~fT~~|200<br>~~fT~~|nA<br>~~fT~~|VGS= 20V|
||Gate-to-Source Reverse Leakage|–––|–––|-200||VGS= -20V|



**Dynamic @ TJ = 25°C (unless otherwise specified)** 

||||~~ee~~|~~ee~~|||||||
|---|---|---|---|---|---|---|---|---|---|---|
||**Parameter**<br>es||**Min. **<br>es<br>~~ee~~|**Typ. **<br>es<br>~~ee~~|**Max.**<br>es||**Units**<br>es|**Conditions**|||
|gfs|Forward Transconductance<br>~~es~~||8.0<br>~~ee ~~<br>~~es~~|–––<br> ~~ee~~<br>~~es~~|–––<br>~~es~~||S<br>~~es~~|VDS= 50V, ID= 3.2A|||
|Qg|Total Gate Charge<br>~~a~~||–––<br>~~a~~|37<br>~~a~~|56                 I<br>~~a~~||56                 I<br>nC|56                 ID= 3.2A<br>VDS= 50V<br>VGS= 10V,|||
|Qgs<br>~~a~~|Gate-to-Source Charge<br>~~es~~<br>~~a~~||–––<br>~~es~~<br>~~es~~|8.0<br>~~es~~|~~es~~||||||
|Qgd<br>~~a~~|Gate-to-Drain("Miller")Charge<br>~~es~~<br>~~a~~||–––<br>~~es~~<br>~~es~~|10<br>~~es~~|~~es~~||||||
|td(on)<br>~~a~~|Turn-On Delay Time<br>~~a~~||–––<br>~~es~~|13|–––||ns<br>~~eee~~|VDD= 100V<br>ID= 3.2A<br>RG= 9.1Ω<br>VGS= 10V<br>~~®~~|||
|tr<br>~~a~~<br>~~Rs~~<br>Re|Rise Time<br>~~a~~<br>~~Rs~~<br>~~es~~||–––<br>~~es~~<br>~~Rs~~<br>~~es~~|4.2<br>~~Rs~~<br>~~es~~|–––<br>~~Rs~~<br>~~es~~||||||
|td(off)<br>Re<br>~~ee~~|Turn-Off Delay Time<br>~~es~~<br>~~eee~~||–––<br>~~es~~<br>~~eee~~|51<br>~~es~~<br>~~eee~~|–––<br>~~es~~<br>~~eee~~||||||
|tf<br>Re<br>~~ee~~|Fall Time<br>~~es~~<br>~~eee~~||–––<br>~~es~~<br>~~eee~~|11<br>~~es~~<br>~~eee~~|–––<br>~~es~~<br>~~eee~~||||||
|Ciss<br>~~ee~~|Input Capacitance<br>~~eee~~<br>~~es~~||–––<br>~~eee~~<br>~~es~~|1720<br>~~eee~~<br>~~es~~|–––<br>~~eee~~<br>~~es~~||pF<br>~~eee~~|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz<br>~~®~~|||
|Coss<br>~~ee~~<br>~~Rs~~<br>Rs|Output Capacitance<br>~~eee~~<br>~~Rs~~||–––<br>~~eee~~<br>~~Rs~~|220<br>~~eee~~<br>~~Rs~~|–––<br>~~eee~~<br>~~Rs~~||||||
|Crss<br>Rs<br>Rs|Reverse Transfer Capacitance<br>eG||–––<br>eG|25<br>eG|–––<br>eG||||||
|Coss<br>Rs<br>Rs<br>es|Output Capacitance<br>eG<br>eG||–––<br>eG<br>eG|1650<br>eG<br>eG|–––<br>eG<br>eG|||VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz|||
|Coss<br>Rs<br>es<br>Rs|Output Capacitance<br>eG<br>eG<br>eG||–––<br>eG<br>eG<br>eG|130<br>eG<br>eG|–––<br>eG<br>eG|||VGS= 0V,  VDS= 80V,  ƒ = 1.0MHz<br>®|||
|Cosseff.<br>es<br>Rs|Effective Output Capacitance<br>eG<br>eG||–––<br>eG<br>eG|250<br>eG|–––<br>eG|||VGS= 0V, VDS= 0V to 80V<br>®|||
|**Avalanche Characteristics**<br>Rs eG<br>®<br>eses|||||||||||
|es<br>Rs||**Parameter**<br>es<br>©||||**Typ.**<br>es|||**Max.**<br>es|**Units**|
|EAS<br>es<br>Rs<br>re||Single Pulse Avalanche Energy<br>es<br>©||||–––<br>es|||91<br>es|mJ|
|IAR<br>Rs<br>re||Avalanche Current<br>©||||–––|||3.2|A|



## **Avalanche Characteristics** 

|**Parameter**<br>**Typ.**<br>**Max.**<br>EAS<br>Single Pulse Avalanche Energy<br>–––<br>91<br>IAR<br>Avalanche Current<br>–––<br>3.2<br>eses<br>Rs<br>©<br>re|**Units**<br>mJ<br>A|
|---|---|



**Diode Characteristics** 

|~~ne~~|**Parameter**<br>~~ee~~|**Min.**<br>~~ee~~|**Typ. **|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS<br>~~ne~~|Continuous Source Current<br>(Body Diode)<br>~~ee~~|–––<br>~~ee~~|–––|2.3||S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>°|
|ISM<br>~~ne~~<br>~~ee~~|Pulsed Source Current<br>(BodyDiode)<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|–––|43|||
|VSD<br>~~ee~~|Diode Forward Voltage<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>es|–––|1.3|V|TJ= 25°C, IS= 3.2A, VGS= 0V<br>°<br>5|
|trr<br>~~ee~~|Reverse Recovery Time<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>es|67|100|ns|www.irf.com<br>TJ= 25°C, IF= 3.2A<br>di/dt = 100A/µs<br>°<br>5|
|2<br>Qrr<br>~~ee~~|Reverse RecoveryCharge<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br> es|220|330|nC||



IRF7490PbF 

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100<br>TOP 18V Ce<br>ge<br>10 |<br>45V TTTH<br>1 ; pe ee<br>O Af LL at t<br>0.1<br>ZF eA<br>3.7V<br>0.01 e ee ee |<br>ae ee ee ee ee ee ee<br>20µs PULSE WIDTH<br>eine Tj = 25°C Meili<br>0.001 FETE EE rn<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

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100.00<br>| TJ = 150°C —_|  4t<br>—— a —<br>10.00 PA | mE U y<br>S a see 4 ee 2 ee ee<br>1.00 ap ty7 jf |ee{| |<br>a es<br>SSS<br>TJ = 25°C<br>0.10 e y es<br>p f 4<br>peso eefj ee| VDS  | = 50V |a<br>20µs PULSE WIDTH<br>0.01 ee ee<br>3.0 4.0 5.0 6.0<br>VGS, Gate-to-Source Voltage (V)<br>)(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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100<br>er<br>6 Hee<br>4.5V<br>10<br>BOTTOM 3.7V ed<br>myAd4a),(| |\med<br>1 YZ| a o 3.7V CTT<br>7 Agmne | oc oo cl<br>J |<br>20µs PULSE WIDTH<br>4 Tj = 150°C<br>0.1 i 44llil| a cee<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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2.5<br>ID = 5.4A<br>V = 10V<br>GS  PLE EE<br>2.0 PET ETT Ly}<br>PELE LEELA/ |<br>1.5 P ELELLeT<br>PELE LIAL<br>1.0<br>f ae d4eeeee<br>EEPea Za<br>LZ<br>0.5 Cagnneeeeee<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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## IRF7490PbF 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss     = Cgs  + Cgd,   Cds     SHORTED<br>| Crss     = Cgd<br>10000 =e Coss    = Cds  + Cgd<br>es ee al RT<br>Ciss<br>1000 ee eee<br>eP e Coss H<br>re ee. ~ ee ee eee<br>R N Crss RL<br>100<br>ee eee:<br>a<br>a el<br>10<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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20<br>ID= 3.2A<br>V = 80V<br>DS hy<br>16 VDS= 50V<br>ep VDS= 20V fb<br>12 pAY<br>f<br>8<br>SY<br>4 | 4<br>Anna<br>0<br>0 10 20 30 40 50 60<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

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100.0 1000<br>OPERATION IN THIS AREA<br>re ee ee ee ae P| | LIMITED BY RDS(on) LT<br>TJ = 150°C 100<br>10.0<br>a a 10 MC A A|<br>100µsec<br>1.0 ee[| ee[_| PSa Sp<br>1 1msec<br>SE —————— T = 25°C |<br>J<br>Tc = 25°C<br>10msec<br>ee a V -—— = 0V Tj = 150°C t tt<br>GS<br>Single Pulse<br>0.1 | TF] OS 0.1 AtLPa elCot<br>0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 1000<br>VSD, Source-toDrain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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## IRF7490PbF 

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6<br>DS<br>5 :<br>4<br>N Re a f -<br>3<br>~ ){ 10V<br>≤ 1<br>≤ 0.1 %<br>2 C ONSN OGE-Duty Factor<br>Fig 10a.   Switching Time Test Circuit<br>1<br>VDS<br>0 || tT ft ft | 90% ——<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>10% / \ A\<br>Fig 9.   Ambient TemperatureMaximum Drain Current Vs. VGS |\« le >|\/Pr ><br>td(on) tr td(off) tf<br>Fig 10b.   Switching Time Waveforms<br>100<br>D = 0.50<br>a meena meee EE | Ee | |<br>10 0.20<br>0.10<br>0.05<br>e ae re 0.02 mer HHH EHH HHH<br>1<br>0.01<br>i me >a | |<br>P eee HEEEEEEth<br>0.1 e ect FHMC FAFA CTF Tn<br>SINGLE PULSE<br>( THERMAL RESPONSE )<br>es | | | |<br>PE ET ET ETT<br>0.01<br>1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>ID , Drain Current (A)<br> thJC )<br>Thermal Response ( Z<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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## IRF7490PbF 

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0.045 0.06<br>0.040 0.05<br>V = 10V<br>GS<br>0.035 0.04 ID = 3.2A<br>ae B NG gR E<br>0.030 J y 0.03 EEE<br>0 10 20 30 40 50 4.0 8.0 12.0 16.0<br>ID , Drain Current (A) VGS, Gate -to -Source Voltage  (V)<br>Fig 12.    On-Resistance Vs. Drain Current Fig 13.    On-Resistance Vs. Gate Voltage<br>Current Regulator<br>Same Type as D.U.T.<br>QG<br>50KΩ<br>12V .2µF<br>.3µF QGS QGD<br>D.U.T. +-VDS VG 240                  I<br>D<br>VGS 3mA Charge 200 TOP                 2.6A       1.4A<br>CurrentIGSampling ResistorsID BOTTOM   3.2A<br>oa“ ia oN o t<br>160<br>Fig 14a&b.   Basic Gate Charge Test Circuit<br>ACE<br>and Waveform 120<br>80 N ING<br>15V<br>40 S KF<br>V(BR)DSS<br>tp VDS L DRIVER<br>0<br>7 R G IASD.U.T +- [V][DD] A 25 H 50 E 75 SS 100 125 150<br>20V<br>I AS tp 0.01Ω Starting TJ, Junction Temperature (°C)<br>)Ω<br>RDS (on) , Drain-to-Source On Resistance (<br>EAS, Single Pulse Avalanche Energy (mJ)<br>)Ω<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 15a&b.** Unclamped Inductive Test circuit and Waveforms 

6 

**Fig 15c.** Maximum Avalanche Energy Vs. Drain Current 

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## IRF7490PbF 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— > D = —— Period<br>) [©)]    • Circuit Layout Considerations | t V t GS=10V<br>| — - •   GroundLow StrayPlane Inductance<br>•   Low Leakage Inductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [l] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 > VDD<br>ma<br>•   Re-Applied<br>Ro ) •   dv/dt controlledDriver same typebyas RgD.U.T. Vpp + Voltage Body Diode  Forward Drop<br>•   Isp controlled by Duty Factor "D" - @ Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e e I  ee SD<br>**----- End of picture text -----**<br>


**Fig 16.** Peak Diode Recovery dv/dt Test Circuit or N-Channel HEXFET ® Power MOSFETs 

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Id<br>Vds f1<br>1 Vgs<br>1<br>1<br>1<br>1<br>1<br>1<br>1<br>1<br>1 [1]<br>Vgs(th) 4'H I\<br>! |<br>! 1<br>H \I<br>io<br>1 H 1 ' 1<br><> <-> IAT __§_§|_ re 4t_§|___ ><br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 17.** Gate Charge Waveform 

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## IRF7490PbF 

## **SO-8 Package Outline** 

**==> picture [348 x 328] intentionally omitted <==**

**----- Start of picture text -----**<br>
INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>ee b .013 .020 0.33 0.51<br>8 Hoe 7 6 q— 5 oa c .0075 .0098 0.19 0.25<br>6 H es D .189 .1968 ee 4.80 ee 5.00 ee<br>E 1 2 3 4 0.25 [.010]  A esee E .1497 .1574 3.80 4.00<br>e .050  BASIC 1.27  BASIC<br>—— ee<br>e1 .025  BASIC 0.635  BASIC<br>TW | aes ee ee<br>H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X ob e escone L .016 .050 0.40 1.27<br>y  0°  8°  0°  8°<br>en<br>e1 K x 45°<br>A<br>= FL] C aan<br>y<br>a if o _ t<br>0.10 [.004]<br>ae 8X b o A1 r N L 8X L 8X c<br>0.25 [.010]  C A B 7<br>le. ~—@ TT<br>FOOTPRINT<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>“Hoon<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>i rT<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>6.46 [.255]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. oon<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>0000<br>3X 1.27 [.050] ak<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## NOTES: 

1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 

2.  CONTROLLING DIMENSION: MILLIMETER 

3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 

4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 

- 5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. 

- MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. 

- : MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO 

- A SUBSTRATE. 

## **SO-8 Part Marking** 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

DATE CODE (YWW) 

**==> picture [172 x 56] intentionally omitted <==**

**----- Start of picture text -----**<br>
XXXX<br>INTERNATIONAL F7101<br>Sc a le<br>RECTIFIER<br>LOGO THO<br>**----- End of picture text -----**<br>


- P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) 

- Y =  LAST DIGIT OF THE YEAR 

- WW =  WEEK A =  ASSEMBLY SITE CODE LOT CODE 

PART NUMBER 

www.irf.com 

8 

## IRF7490PbF 

## **SO-8 Tape and Reel** 

**==> picture [165 x 110] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>oO 0 a)<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )7.9 ( .312 ) | FEED DIRECTION |<br>**----- End of picture text -----**<br>


**==> picture [20 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
NOTES:<br>**----- End of picture text -----**<br>


1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

**==> picture [146 x 67] intentionally omitted <==**

**----- Start of picture text -----**<br>
 330.00<br>(12.992)<br>  MAX.<br>VY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 17mH RG = 25Ω, IAS = 3.2A. 

When mounted on 1 inch square copper board 

Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS 

Pulse width ≤ 300µs; duty cycle ≤ 2%. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/04 

www.irf.com 

9 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF7490TRPBF/power-mosfet-n-channel-100-v-54-a-0039-ohm-soic)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf7490trpbf/mosfet-n-ch-100v-5-4a-soic-8/dp/2803412RL)
---

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