# Power MOSFET, StrongIRFET™, N Channel, 40 V, 135 A, 0.0017 ohm, DirectFET MF, Surface Mount

![Product image](https://novapart.co/image/farnell:2781118RL/)

**URL**: https://novapart.co/products/IRF7483MTRPBF/power-mosfet-strongirfettm-n-channel-40-v-135-a
**SKU**: IRF7483MTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.4300
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Channel Type | N Channel |
| Power Dissipation | 74W |
| Drain Source On State Resistance | 0.0017ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781118RL/)

## Strong _IR_ FET™ IRF7483MTRPbF ~~pe~~ 

DirectFET[®] N-Channel Power MOSFET 

## **Application** 

- Brushed Motor drive applications 

- BLDC Motor drive applications 

- Battery powered circuits 

- Half-bridge and full-bridge topologies 

- Synchronous rectifier applications 

- Resonant mode power supplies 

- OR-ing and redundant power switches 

- DC/DC and AC/DC converters 

- DC/AC Inverters 

## **Benefits** 

- Improved  Gate, Avalanche and Dynamic dv/dt Ruggedness 

- Fully Characterized Capacitance and Avalanche SOA 

- Enhanced body diode dv/dt and di/dt Capability 

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VDSS  40V<br>RDS(on) typ. 1.7m <br>            max  2.3m <br>I 135A<br>D (Silicon Limited)<br>S<br>S<br>S<br>D D<br>S<br>G<br>DirectFET [®]  ISOMETRIC<br>MF<br>**----- End of picture text -----**<br>


- Lead-Free, RoHS Compliant 

|||**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|**Base part number**|**Package Type**|**Form**|**Quantity**||
|IRF7483MPbF|DirectFET®MF|Tape and Reel|4800|IRF7483MTRPbF|



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6.5<br>ID = 81A<br>5.0<br>Aa<br>3.5<br>TJ = 125°C<br>Mn<br>2.0<br>ee<br>TJ = 25°C<br>0.5 Pere<br>4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage  (V)<br>)<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

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150<br>125<br>mf [ttt]<br>100<br>75<br>ES<br>50<br>PN]<br>CTT<br>25<br>CCE<br>0<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Maximum Drain Current vs. Case Temperature 

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IRF7483MTRPbF 

## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**|||
|---|---|---|
|**Symbol**<br>**Parameter**|**Max.**<br>**Units**||
|ID @TC= 25°C<br>ContinuousDrainCurrent,VGS @10V(Silicon Limited)|135||
|ID@ TC =100°C Continuous Drain Current, VGS@ 10V (Silicon Limited)|86<br>A||
|IDM<br>Pulsed Drain Current|540||
|PD@TC =25°C<br>Maximum Power Dissipation|74<br>W||
|Linear DeratingFactor|0.59<br>W/°C||
|VGS<br>Gate-to-Source Voltage|± 20<br>V||
|TJ<br>Operating Junction and<br>TSTG<br>Storage Temperature Range|-55  to + 150<br>°C||
|**Avalanche Characteristics**|||
|EAS (Thermally limited)<br>Single Pulse Avalanche Energy<br>69<br>EAS (tested)<br>Single Pulse Avalanche EnergyTested Value<br>147<br>IAR<br>Avalanche Current<br>See Fig.15,16, 23a, 23b<br>A<br>EAR<br>Repetitive Avalanche Energy<br>mJ<br>mJ<br>EAS (Thermally limited)<br>Single Pulse Avalanche Energy <br>152<br>~~—SSS~~<br>~~ee~~|||
|**Thermal Resistance**|||
|**Symbol**<br>**Parameter**<br>RJA<br>Junction-to-Ambient<br>RJA<br>Junction-to-Ambient<br>RJA<br>Junction-to-Ambient<br>RJC<br>Junction-to-Case<br>RJ-PCB<br>Junction-to-PCB Mounted<br>**Static @ TJ = 25°C (unless otherwise specified)**<br>~~SSS ~~|**Typ.**<br>**Max.**<br>**Units**<br>–––<br>60<br> °C/W<br>12.5<br>–––<br>20<br>–––<br>–––<br>1.7<br>1.0<br>–––<br> ~~==~~|°C/W|
|**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>40<br>–––<br>–––<br>V<br>VGS= 0V,ID= 250µA<br>V(BR)DSS/TJBreakdown Voltage Temp. Coefficient<br>–––<br>32<br>––– mV/°C Reference to 25°C,ID= 1.0mA<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>1.7<br>2.3<br>m VGS= 10V,ID= 81A<br>–––<br>3.4<br>–––<br>VGS= 6.0V,ID= 41A<br>VGS(th)<br>Gate Threshold Voltage<br>2.2<br>3.0<br>3.9<br>V<br>VDS= VGS,ID= 100µA<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>1.0<br>µAVDS= 40V,VGS= 0V<br>–––<br>–––<br>150<br>VDS= 40V,VGS= 0V,TJ= 125°C<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>VGS= 20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS= -20V<br>RG<br>Internal Gate Resistance<br>–––<br>1.2<br>–––<br><br>nA<br>~~————~~<br>~~—a~~|||
|**Notes:**|||
|Mounted on minimum footprint full size board with metalized<br>TC measured with thermocouple mounted to top (Drain) of part.|||
|back and with small clip heatsink.|||



-  Used double sided cooling , mounting pad with large heatsink. 

   -  Surface mounted on 1 in. square Cu board  (still air). 

 Mounted to a PCB with small clip heatsink (still air) 

 Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 

2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 14, 2015 

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IRF7483MTRPbF ~~_~~ 

|**Dynamic @ TJ = 25°C (unless otherwise specified)**|
|---|
|**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**<br>gfs<br>Forward Transconductance<br>125<br>–––<br>–––<br>S<br>VDS =10V, ID =81A<br>Qg<br>Total Gate Charge<br>–––<br>81<br>nC<br>ID= 81A<br>Qgs<br>Gate-to-Source Charge<br>–––<br>21<br>–––<br>VDS=20V<br>Qgd<br>Gate-to-Drain ("Miller") Charge<br>–––<br>28<br>–––<br>VGS =10V<br>Qsync<br>Total Gate Charge Sync. (Qg -Qgd)<br>–––<br>53<br>–––<br>ID =81A, VDS =0V, VGS =10V<br>td(on)<br>Turn-On Delay Time<br>–––<br>15<br>–––<br>ns<br>VDD= 20V<br>tr<br>Rise Time<br>–––<br>53<br>–––<br>ID= 30A<br>td(off)<br>Turn-Off Delay Time<br>–––<br>39<br>–––<br>RG= 2.7<br>tf<br>Fall Time<br>–––<br>25<br>–––<br>VGS =10V<br>Ciss<br>Input Capacitance<br>–––3913–––<br>pF<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>642<br>–––<br>VDS= 25V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>431<br>–––<br>ƒ=1.0MHz<br>Cosseff.(ER)Effective Output Capacitance(EnergyRelated)–––<br>765<br>–––<br>VGS= 0V,VDS= 0V to 32V<br>Cosseff. (TR) Effective Output Capacitance (Time Related)<br>–––<br>932<br>–––<br>VGS= 0V, VDS= 0V to 32V<br>~~es~~<br>~~es——————~~<br>~~es~~<br>~~es~~<br>~~———————~~<br>~~eee~~<br>~~——~~<br>~~es~~<br>~~nS I~~<br>~~PO~~<br>~~eets~~<br>~~IY~~<br>~~rs~~|
|**Diode Characteristics**|
|D<br>S<br>G<br>**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**<br>IS<br>Continuous Source Current<br>–––   –––<br>74<br>A<br>MOSFET symbol<br>(BodyDiode)<br>showing  the<br>ISM<br>Pulsed Source Current<br>–––   –––   540<br>integral reverse<br>(BodyDiode) <br>p-njunctiondiode.<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.2<br>V<br>TJ= 25°C,IS= 81A, VGS= 0V<br>dv/dt<br>Peak Diode Recovery<br>–––<br>2.4<br>–––<br>V/nsTJ=150°C,IS= 81A,<br>VDS =40V<br>trr<br>Reverse Recovery Time<br>–––<br>38<br>–––<br>nsTJ =25°CVR= 34V,<br>–––<br>39<br>–––<br>TJ= 125°C IF= 81A<br>Qrr<br>Reverse Recovery Charge<br>–––<br>42<br>–––<br>TJ= 25°C<br>di/dt = 100A/µs<br>–––<br>46<br>–––<br>TJ= 125°C<br>IRRM<br>Reverse RecoveryCurrent<br>–––<br>1.9<br>–––<br>A<br>TJ= 25°C<br>nC<br>~~ee~~<br>~~I I (Ot~~<br>~~(OU~~<br>~~ee rr ss~~<br>~~ee~~<br>~~rs~~<br>~~rs tn~~<br>~~a~~<br>~~ena~~<br>~~ee~~<br>~~es~~|



## **Notes:** 

- Repetitive rating;  pulse width limited by max. junction temperature. 

-   Limited by TJmax, starting TJ = 25°C, L = 0.021mH 

- RG = 50, IAS = 81A, VGS =10V. 

-   ISD ≤ 81A, di/dt ≤ 839A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. 

- Pulse width ≤ 400µs; duty cycle ≤ 2%. 

- Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

- Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

- When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note # AN-994. - - 

- http://www.irf.com/technical info/appnotes/an 994.pdf 

-  R is measured at TJ approximately 90°C. 

-  This value determined from sample failure population, starting TJ = 25°C, L= 0.021mH, RG = 50, IAS = 81A, VGS =10V. 

- Limited by TJmax, starting TJ = 25°C, L = 1mH 

- RG = 50, IAS = 17A, VGS =10V. 

3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 14, 2015 ~~a~~ 

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IRF7483MTRPbF<br>TGR<br>1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>6.0V 6.0V<br>100 5.5V 5.0V 5.5V 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br>100<br>10<br>4.5V<br>4.5V<br>60µs PULSE WIDTH 60µs PULSE WIDTH<br>Tj = 25°C Tj = 150°C<br>1 10 Va<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics  Fig 4.   Typical Output Characteristics<br>1000 2.0<br>ID = 81A<br>VGS = 10V<br>1.5<br>TJ = 150°C<br>100<br>rt) te<br>1.0<br>TJ = 25°C<br>10<br>COAT) pein<br>0.5<br>V DS  = 10V<br>60µs PULSE WIDTH<br>1.0 et) 0.0 Ur<br>2 3 4 5 6 7 8 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 5.   Typical Transfer Characteristics  Fig 6.   Normalized On-Resistance vs. Temperature<br>100000 14.0<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED ID= 81A<br>C rss    = C gd  12.0 VDS= 32V<br>Coss  = Cds + Cgd 10.0 V DS = 20V<br>10000<br>Ciss 8.0<br>Coss 6.0<br>1000 Crss<br>4.0<br>2.0<br>Pate if<br>100 0.0<br>0.1 IMEI 1 10 100 = 0 HERE 20 40 60 80 100<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 8.** Typical Gate Charge vs. Gate-to-Source Voltage 

4 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 14, 2015 ~~©.~~ 

IRF7483MTRPbF ~~[nn~~ 

## ~~TIGR~~ 

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1000<br>100<br>TJ = 150°C<br>ert<br>10<br>TJ = 25°C<br>1<br>V GS  = 0V<br>0.1<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>VSD, Source-to-Drain Voltage (V)<br>Fig 9.<br>48<br>Id = 1.0mA<br>47<br>46 eet BREE  eee AE<br>45 SREP Zee<br>PET ELE<br>44<br>EREDAR<br>43<br>42<br>BEEP ARR<br>41 PTA TTT EE<br>ALTE<br>40<br>39 PET TEE TTT TEty<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Temperature ( °C )<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Source-Drain Diode Forward Voltage 

**Fig 11.** Drain-to-Source Breakdown Voltage 

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10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000<br>100 100µsec<br>10<br>1msec<br>1 DC<br>10msec<br>0.1 Tc = 25 ° C<br>Tj = 150°C<br>Single Pulse<br>0.01<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 10.   Maximum Safe Operating Area<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0.0 _<br>-5 0 5 10 15 20 25 30 35 40 45<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


**Fig 12.** Typical Coss Stored Energy 

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10<br>VGS = 5.5V TTT<br>9<br>VGS = 6.0V<br>8 VGS = 7.0V ‘A | TZ |<br>VGS = 8.0V<br>7 VGS = 10V WT<br>6 WAY [ft<br>5 SReNGae<br>4 ew ANNEe<br>3 ee NS<br>2<br>SSaaeNm<br>1<br>PR<br>0<br>0 25 50 75 100 125 150 175 200<br>ID, Drain Current (A)<br>)<br>m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

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10<br>1 D = 0.50<br>0.20<br>0.10<br>0.1 0.05 eer<br>Sguucee 0.02 aanillll<br>0.01<br>0.01<br>Sasi SINGLE PULSE — Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>|EN<br>0.001<br>1E-006 22a [RE] 1E-005  call 0.0001 OE 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Allowed avalanche Current vs avalanche<br>100 TM pulsewidth, tav, assuming  oy Tj  = 125°C and<br>Tstart =25°C (Single Pulse)<br>sail seul cee<br>10<br>BL meeeERE<br>1<br>a aSm<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  j = 25°C and<br>Tstart = 125°C.<br>pT<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.  Avalanche Current vs. Pulse Width<br>80<br>TOP          Single Pulse                 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>70 BOTTOM   1.0% Duty Cycle (For further info, see AN-1005 at www.irf.com)<br>ID = 81A 1.Avalanche failures assumption:<br>60 NEStL Purely a thermal phenomenon and failure occurs at a<br>temperature far in excess of Tjmax. This is validated for every  jmax. This is validated for every  . This is validated for every<br>50 part type.<br>PINTTT ET TT 2. Safe operation in Avalanche is allowed as long asTjmax is not<br>40    exceeded.<br>NSE<br>3. Equation below based on circuit and waveforms shown in Figures<br>30     23a, 23b.<br>CNONETEE 4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse.<br>20 EERNGANEEE 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage<br> increase during avalanche).<br>10 6. Iav = Allowable avalanche current.<br>COIS ENT 7. T = Allowable rise in junction temperature, not to exceed Tjmax  T = Allowable rise in junction temperature, not to exceed Tjmax  T = Allowable rise in junction temperature, not to exceed Tjmax  jmax<br>pit     (assumed as 25°C in Figure 14, 15).<br>0 ET AAEN tav = Average time in avalanche.<br>25 50 75 100 125 150 D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C) ZthJC(D, tav) = Transient thermal resistance, see Figures 13) thJC(D, tav) = Transient thermal resistance, see Figures 13) (D, tav) = Transient thermal resistance, see Figures 13) av) = Transient thermal resistance, see Figures 13) ) = Transient thermal resistance, see Figures 13)<br>EAR , Avalanche Energy (mJ)<br>Thermal Response ( Z thJC ) °C/W<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


   - Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every  jmax. This is validated for every  . This is validated for every part type. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. T = Allowable rise in junction temperature, not to exceed Tjmax  T = Allowable rise in junction temperature, not to exceed Tjmax  T = Allowable rise in junction temperature, not to exceed Tjmax  jmax (assumed as 25°C in Figure 14, 15). 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 13) thJC(D, tav) = Transient thermal resistance, see Figures 13) (D, tav) = Transient thermal resistance, see Figures 13) av) = Transient thermal resistance, see Figures 13) ) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

EAS (AR) = PD (ave)·tav 

6 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 14, 2015 ~~=—_—_____—~~ 

IRF7483MTRPbF ~~LEE~~ 

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4.5<br>PLETE LEE<br>4.0<br>3.5 Penn eee<br>SSPE<br>3.0<br>ID = 100µA<br>ID = 250µA<br>2.5 ID = 1.0mA<br>ASS<br>ID = 1.0A<br>2.0<br>BEEAXN<br>1.5<br>FLEET TT<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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8<br>IF = 54A<br>7 V R  = 34V a<br>TJ = 25°C<br>6 T J  = 125°C<br>| bee<br>5<br>Pa<br>4<br>3 pa<br>2 Pt<br>1<br>PE te<br>100 200 300 400 500 600<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

**Fig 18.** Typical Recovery Current vs. dif/dt 

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8<br>IF = 81A<br>LT.<br>7 V R  = 34V<br>TJ = 25°C<br>6 T J  = 125°C<br>5 er<br>eT<br>4<br>3<br>et<br>Zt<br>2<br>1<br>ATer<br>100 200 300 400 500 600<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


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160<br>IF = 54A<br>140 V R  = 34V TT<br>TJ = 25°C<br>120 T J  = 125°C<br>100 eZ<br>80 Te<br>60<br>me An<br>40 eT Tt<br>20<br>TE<br>100 200 300 400 500 600<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

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160<br>IF = 81A<br>TT,<br>140 V R  = 34V<br>TJ = 25°C<br>Te<br>120 T J  = 125°C<br>100<br>mm yA<br>80<br>oa<br>60<br>Er<br>ane<br>40<br>Er<br>20<br>100 200 300 400 500 600<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

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~~IéaR~~ 

IRF7483MTRPbF ~~_~~ 

**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>NW\= IAS - [V][DD]<br>20V<br>tp 0.01<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>< tp ><br>IAS<br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

**==> picture [21 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>**----- End of picture text -----**<br>


**Fig 24b.** Switching Time Waveforms 

**==> picture [172 x 117] intentionally omitted <==**

**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 14, 2015 

~~I6aR~~ 

IRF7483MTRPbF ~~_~~ 

## **DirectFET[®] Board Footprint, MF Outline (Medium Size Can, E-Designation)** 

Please see DirectFET[®] application note AN-1035 for all details regarding the assembly of DirectFET[®] . This includes all recommendations for stencil and  substrate designs. 

**==> picture [349 x 203] intentionally omitted <==**

**----- Start of picture text -----**<br>
G = GATE<br>D = DRAIN<br>S = SOURCE<br>i<br>D D<br>G<br>S<br>!<br>\<br>S S<br>D D<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 14, 2015 

~~IvaR~~ 

IRF7483MTRPbF ~~or~~ 

## **DirectFET[®] Outline Dimension, MF Outline** 

## **(Medium Size Can, E-Designation)** 

Please see DirectFET[®] application note AN-1035 for all details regarding the assembly of DirectFET[®] . This includes all recommendations for stencil and  substrate designs. 

**==> picture [112 x 161] intentionally omitted <==**

**----- Start of picture text -----**<br>
DIMENSIONS<br>METRIC IMPERIAL<br>CODE MIN MAX MIN MAX<br>A 6.25 6.35 0.246 0.250<br>B 4.80 5.05 0.189 0.199<br>C 3.85 3.95 0.152 0.156<br>D 0.35 0.45 0.014 0.018<br>E 0.58 0.62 0.023 0.024<br>F 1.08 1.12 0.043 0.044<br>G 0.93 0.97 0.037 0.038<br>H 1.28 1.32 0.050 0.052<br>J 0.38 0.42 0.015 0.017<br>J1 0.58 0.62 0.023 0.024<br>K 0.88 0.92 0.035 0.036<br>L 2.08 2.12 0.082 0.083<br>M 0.59 0.70 0.023 0.028<br>N 0.02 0.08 0.0008 0.003<br>P 0.08 0.17 0.003 0.007<br>**----- End of picture text -----**<br>


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Dimensions are shown in<br>millimeters (inches)<br>**----- End of picture text -----**<br>


## **DirectFET[® ] Part Marking** 

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LOGO<br>GATE MARKING<br>PART NUMBER<br>BATCH NUMBER<br>DATE CODE<br>Line above the last character of<br>the date code indicates "Lead-Free"<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

10 www.irf.com        © 2015 International Rectifier Submit Datasheet Feedback May 14, 2015 

~~16aR~~ 

IRF7483MTRPbF ~~[~~ 

## **DirectFET[® ] Tape & Reel Dimension (Showing component orientation).** 

## LOADED TAPE FEED DIRECTION 

NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF7483MTRPBF). For 1000 parts on 7" reel, order   IRF7483MTR1PBF 

|||DIMENSIONS|DIMENSIONS|DIMENSIONS||||||||**REEL DIMENSIONS**|**REEL DIMENSIONS**||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|NOTE: CONTROLLING<br>DIMENSIONS IN MM|CODE|MAX<br>MIN<br>METRIC||IMPERIAL<br>MIN<br>MAX|||MIN<br>STANDARD OPTION<br>CODE<br>MAX<br>METRIC|||||MAX<br>IMPERIAL<br>STANDARD OPTION**(QTY 4800)**<br>MIN|TR1 OPTION<br>MAX<br>MIN<br>METRIC||||MIN<br>TR1 OPTION**(QTY 1000)**<br>MAX<br>IMPERIAL||
||A|7.90|8.10|0.311|0.319||A|330.0||N.C||N.C<br>12.992|177.77||N.C||6.9|N.C|
||B|3.90|4.10|0.154|0.161||B|20.2||N.C||N.C<br>0.795|19.06||N.C||0.75|N.C|
||C|11.90|12.30|0.469|0.484||C|12.8||13.2||0.520<br>0.504|13.5||12.8||0.53|0.50|
||D|5.45|5.55|0.215|0.219||D|1.5||N.C||N.C<br>0.059|1.5||N.C||0.059|N.C|
||E<br>F<br>G<br>H|5.10<br>6.50<br>1.50<br>1.50|5.30<br>6.70<br>N.C<br>1.60|0.201<br>0.256<br>0.059<br>0.059|0.209<br>0.264<br>N.C<br>0.063||E<br>F<br>G<br>H|100.0<br>N.C<br>12.4<br>11.9||N.C<br>18.4<br>14.4<br>15.4||N.C<br>0.724<br>0.567<br>0.606<br>3.937<br>N.C<br>0.488<br>0.469|58.72<br>N.C<br>11.9<br>11.9||N.C<br>13.50<br>12.01<br>12.01||2.31<br>N.C<br>0.47<br>0.47|N.C<br>0.53<br>N.C<br>N.C|



Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial *<br>(per JEDEC JESD47F††guidelines)||
|**Moisture Sensitivity Level**|DFET 1.5|MSL1<br>(per JEDEC J-STD-020D††)|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site - 

- http://www.irf.com/product info/reliability 

- ††      Applicable version of JEDEC standard at the time of product release. 

- Industrial qualification standards except autoclave test conditions. 

## **Revision History** 

|**Date**|||**Comments**|
|---|---|---|---|
|05/14/2015||Updated registered trademark from  DirectFET|Updated registered trademark from  DirectFETTMto DirectFET®on page 1,9 and 10.|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

11 www.irf.com        © 2015 International Rectifier Submit Datasheet Feedback May 14, 2015 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF7483MTRPBF/power-mosfet-strongirfettm-n-channel-40-v-135-a)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irf7483mtrpbf/mosfet-n-ch-40v-135a-directfet/dp/2781118RL)
---

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