# Power MOSFET, N Channel, 40 V, 330 A, 950 µohm, DirectFET ME, Surface Mount

![Product image](https://novapart.co/image/farnell:2709878/)

**URL**: https://novapart.co/products/IRF7480MTRPBF/power-mosfet-n-channel-40-v-330-a-950-ohm
**SKU**: IRF7480MTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9740
**Stock**: 1000+
**Lead Time**: 155 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:330A; Drain Source Voltage Vds:40V; On Resistance Rds(on):950µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | StrongIRFET, DirectFET |
| Qualification | - |
| Power Dissipation | 96W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DirectFET ME |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 330A |
| Drain Source On State Resistance | 950µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2709878/)

## ~~Cinfineon~~ 

## Strong _IR_ FET™ IRF7480MTRPbF ~~pe~~ 

DirectFET[®] N-Channel Power MOSFET 

## **Application** 

- Brushed Motor drive applications 

- BLDC Motor drive applications 

- Battery powered circuits 

- Half-bridge and full-bridge topologies 

- Synchronous rectifier applications 

- Resonant mode power supplies 

- OR-ing and redundant power switches 

- DC/DC and AC/DC converters 

- DC/AC Inverters 

## **Benefits** 

- Improved  Gate, Avalanche and Dynamic dv/dt Ruggedness 

- Fully Characterized Capacitance and Avalanche SOA 

- Enhanced body diode dv/dt and di/dt Capability 

- Lead-Free, RoHS Compliant 

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VDSS  40V<br>RDS(on) typ. 0.95m <br>            max  1.20m <br>I 217A<br>D (Silicon Limited)<br>I 330A<br>D (double-sided cooling)<br>S<br>S S<br>S<br>D D<br>S S<br>G<br>DirectFET [®]  ISOMETRIC<br>ME<br>**----- End of picture text -----**<br>


|||**Standard Pack**|**Standard Pack**||
|---|---|---|---|---|
|**Base part number**|**Package Type**|**Form**|**Quantity**|**Orderable Part Number**|
|IRF7480MPbF|DirectFET®ME|Tape and Reel|4800|IRF7480MTRPbF|



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3.0 225<br>ID = 132A 200<br>2.5 ALE PN<br>175<br>150<br>2.0<br>CCE =<br>125<br>TJ = 125°C 100<br>1.5<br>WELLE ee<br>75<br>1.0 50<br>Sees<br>TJ = 25°C 25<br>0.5 ere 0 ee<br>4 6 8 10 12 14 16 18 20 25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>VGS, Gate -to -Source Voltage  (V)<br>ID,  Drain Current (A)<br>)<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Maximum Drain Current vs. Case Temperature 

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IRF7480MTRPbF 

## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**|||
|---|---|---|
|**Symbol**<br>**Parameter**|**Max.**<br>**Units**||
|ID@ TC(top)= 25°C<br>TC (bottom)= 25°C Continuous Drain Current, VGS@ 10V (double-sided cooling)<br>330|||
|ID @TC= 25°C<br>Continuous Drain Current,VGS @10V(Silicon Limited)|217||
|ID @TC= 100°C<br>Continuous Drain Current,VGS @10V(Silicon Limited)|137<br>A||
|IDM<br>Pulsed Drain Current|868||
|PD @TC= 25°C<br>Maximum Power Dissipation|96<br>W||
|Linear DeratingFactor|0.77<br>W/°C||
|VGS<br>Gate-to-Source Voltage|± 20<br>V||
|TJ<br>Operating Junction and<br>TSTG<br>Storage Temperature Range|-55  to + 150<br>°C||
|**Avalanche Characteristics**|||
|EAS (Thermally limited)<br>Single Pulse Avalanche Energy<br>81<br>EAS (Thermally limited)<br>Single Pulse Avalanche Energy <br>206<br>IAR<br>Avalanche Current<br>See Fig.15,16, 23a, 23b<br>A<br>EAR<br>Repetitive Avalanche Energy<br>mJ<br>**Thermal Resistance**<br>mJ<br>~~—ee~~|||
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RJA<br>Junction-to-Ambient<br>–––<br>45<br> °C/W<br>RJA<br>Junction-to-Ambient<br>12.5<br>–––<br>RJA<br>Junction-to-Ambient<br>20<br>–––<br>RJC<br>Junction-to-Case<br>–––<br>1.3<br>RJ-PCB<br>Junction-to-PCB Mounted<br>0.75<br>–––<br>**Static @ TJ = 25°C (unless otherwise specified)**<br>~~SS~~<br>~~SSSSSS=25R~~||°C/W|
|**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>40<br>–––<br>–––<br>V<br>VGS= 0V,ID= 250µA<br>V(BR)DSS/TJBreakdown Voltage Temp. Coefficient<br>–––<br>30<br>––– mV/°C Reference to 25°C,ID= 1.0mA<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>0.95 1.20<br>m VGS= 10V,ID= 132A<br>––– 1.60<br>–––<br>VGS= 6.0V,ID= 66A<br>VGS(th)<br>Gate Threshold Voltage<br>2.1<br>3.0<br>3.9<br>V<br>VDS= VGS,ID= 150µA<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>1.0<br>µAVDS= 40V,VGS= 0V<br>–––<br>–––<br>150<br>VDS= 40V,VGS= 0V,TJ= 125°C<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>VGS= 20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS= -20V<br>RG<br>Internal Gate Resistance<br>–––<br>0.81<br>–––<br><br>nA<br>~~————~~<br>~~—~~|||
|**Notes:**|||
|Mounted on minimum footprint full size board with metalized<br>TC measured with thermocouple mounted to top (Drain) of part.|||
|back and with small clip heatsink.|||



-  Used double sided cooling , mounting pad with large heatsink. 

   -  Surface mounted on 1 in. square Cu board  (still air). 

 Mounted to a PCB with small clip heatsink (still air) 

 Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 

2 

2016-5-4 

IRF7480MTRPbF ~~rd~~ 

## ~~Cinfin eon~~ 

|<br>IRF7480MTRPbF<br> <br>~~Cinfineon~~<br>~~rd~~|<br>IRF7480MTRPbF<br> <br>~~Cinfineon~~<br>~~rd~~|
|---|---|
|**Dynamic @ TJ = 25°C (unless otherwise specified)**<br>**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**<br>gfs<br>Forward Transconductance<br>370<br>–––<br>–––<br>S<br>VDS =10V, ID =132A<br>Qg<br>Total Gate Charge<br>–––<br>123<br>185<br>nC<br>ID= 132A<br>Qgs<br>Gate-to-Source Charge<br>–––<br>31<br>–––<br>VDS=20V<br>Qgd<br>Gate-to-Drain ("Miller") Charge<br>–––<br>44<br>–––<br>VGS =10V<br>Qsync<br>Total Gate Charge Sync. (Qg -Qgd)<br>–––<br>79<br>–––<br>ID =132A, VDS =0V, VGS =10V<br>td(on)<br>Turn-On Delay Time<br>–––<br>21<br>–––<br>ns<br>VDD= 20V<br>tr<br>Rise Time<br>–––<br>70<br>–––<br>ID= 30A<br>td(off)<br>Turn-Off Delay Time<br>–––<br>68<br>–––<br>RG= 2.7<br>tf<br>Fall Time<br>–––<br>58<br>–––<br>VGS =10V<br>Ciss<br>Input Capacitance<br>–––6680–––<br>pF<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––1035–––<br>VDS= 25V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>700<br>–––<br>ƒ=1.0MHz<br>Cosseff.(ER)Effective Output Capacitance(EnergyRelated)––– 1240 –––<br>VGS= 0V,VDS= 0V to 32V<br>Cosseff. (TR) Effective Output Capacitance (Time Related)<br>––– 1515 –––<br>VGS= 0V, VDS= 0V to 32V<br>~~a~~<br>~~I~~<br>~~(I (UD (OD(OO~~<br>~~a~~<br>~~I~~<br>~~(RD (OOD (OD(OR~~<br>~~a nn~~<br>~~ee~~<br>~~ee~~<br>~~**e**e~~<br>~~e~~<br>~~PO~~<br>~~eeen~~<br>~~ee~~<br>~~ee~~<br>~~**ee**en~~<br>~~ee~~<br>~~ee~~<br>~~——~~<br>~~esrn~~<br>~~(ts Dn rs~~||
|**Diode Characteristics**||
|D<br>S<br>G<br>**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**<br>IS<br>Continuous Source Current<br>–––   –––<br>87<br>A<br>MOSFET symbol<br>(BodyDiode)<br>showing  the<br>ISM<br>Pulsed Source Current<br>–––   –––   868<br>integral reverse<br>(BodyDiode) <br>p-njunctiondiode.<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.2<br>V<br>TJ= 25°C,IS=132A, VGS= 0V<br>dv/dt<br>Peak Diode Recovery<br>–––<br>2.4<br>–––<br>V/nsTJ=150°C,IS=132A,<br>VDS =40V<br>trr<br>Reverse Recovery Time<br>–––<br>44<br>–––<br>nsTJ =25°CVR= 34V,<br>–––<br>46<br>–––<br>TJ= 125°C IF= 132A<br>~~ee~~<br>~~I I (Ot~~<br>~~(OU~~<br>~~ft~~<br>~~es~~<br>~~I~~<br>~~(ts ts~~<br>~~ae~~<br>~~rs es ed es~~||
|Qrr<br>Reverse Recovery Charge<br>–––<br>56<br>–––<br>TJ= 25°C<br>di/dt = 100A/µs<br>–––<br>63<br>–––<br>TJ= 125°C<br>IRRM<br>Reverse RecoveryCurrent<br>–––<br>2.1<br>–––<br>A<br>TJ= 25°C<br>nC<br>~~**|**~~<br>~~Ce~~<br>~~eeI~~|di/dt = 100A/µs|



## **Notes:** 

- Repetitive rating;  pulse width limited by max. junction temperature. 

-   Limited by TJmax, starting TJ = 25°C, L = 0.009mH, RG = 50, IAS = 132A, VGS =10V. 

-   ISD ≤ 132A, di/dt ≤ 920A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. 

- Pulse width ≤ 400µs; duty cycle ≤ 2%. 

- Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

- Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

- When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer 

   - - 

   - to application note # AN-994. http://www.irf.com/technical info/appnotes/an 994.pdf 

-  R is measured at TJ approximately 90°C. 

-   Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 20A, VGS =10V. 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>100 5.0V<br>BOTTOM 4.5V<br>ae -uils<br>4.5V<br>10<br>60µs PULSE WIDTH60µs PULSE WIDTH<br>Tj = 25°C<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>6.0V 6.0V<br>5.5V 5.5V<br>100 5.0V 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br>100<br>ae -uils<br>4.5V<br>4.5V<br>10<br>60µs PULSE WIDTH60µs PULSE WIDTH 60µs PULSE WIDTH<br>Tj = 25°C Tj = 150°C<br>1 10<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics  Fig 4.   Typical Output Characteristics<br>1000 1.8<br>ID = 132A<br>1.6 V GS  = 10V<br>TJ = 150°C<br>100 1.4<br>1.2<br>T J  = 25°C<br>10 1.0<br>“ey ER<br>0.8<br>V DS  = 10V<br>60µs PULSE WIDTH<br>1.0 0.6<br>Bias aceeeeett<br>2 3 4 5 6 7 8 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 5.   Typical Transfer Characteristics  Fig 6.   Normalized On-Resistance vs. Temperature<br>100000 14.0<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED ID= 132A<br>12.0<br>C rss    = C gd  VDS= 32V<br>Coss  = Cds + Cgd 10.0 VDS= 20V<br>10000 Ciss<br>Set ea Saenny 40<br>8.0<br>C oss<br>C rss 6.0<br>_ Ty<br>1000<br>4.0<br>a) = FREE<br>2.0<br>100 0.0<br>1 CUI 10 100 = 0 VEREEEEE 20 40 60 80 100 120 140 160<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Normalized On-Resistance vs. Temperature 

**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 8.** Typical Gate Charge vs. Gate-to-Source Voltage 

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## ~~Gree~~ 

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1000<br>100<br>TJ = 150°C<br>10<br>TJ = 25°C<br>1<br>V GS  = 0V<br>0.1<br>0.2 0.4 0.6 0.8 1.0<br>VSD, Source-to-Drain Voltage (V)<br>Fig 9.<br>48<br>Id = 1.0mA<br>47 TTT<br>CL<br>46<br>SaOGG087 400<br>45<br>COC<br>44<br>43 SE0e7 400000<br>COA<br>42<br>41 CAE<br>ZC<br>40<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Temperature ( °C )<br>ISD, Reverse Drain Current (A)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Source-Drain Diode Forward Voltage 

**Fig 11.** Drain-to-Source Breakdown Voltage 

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1000<br>100 µsec<br>100<br>OPERATION IN THIS AREA<br>10 LIMITED BY RDS(on)<br>1msec<br>1<br>10msec<br>0.1 Tc = 25°C DC<br>Tj = 150°C<br>Single Pulse<br>0.01<br>0.1 1 10<br>VDS, Drain-to-Source Voltage (V)<br>Fig 10.   Maximum Safe Operating Area<br>0.9<br>0.8<br>0.7<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0.0<br>-5 0 5 10 15 20 25 30 35 40<br>VDS, Drain-to-Source Voltage (V)<br>Energy (µJ)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 12.** Typical Coss Stored Energy 

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4.5<br>4.0 Vgs = 5.5V THe<br>Vgs = 6.0V<br>Vgs = 7.0V<br>3.5 Vgs = 8.0V<br>NOT<br>Vgs = 10V<br>3.0 WOVE<br>2.5<br>CANE<br>2.0 CCE TT<br>1.5 SERSRNNEEE<br>AN<br>1.0<br>0.5<br>PE [TET] ET Tt<br>0 20 40 60 80 100 120 140 160 180 200<br>ID, Drain Current (A)<br>)<br>m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

a 

5 

2016-5-4 

IRF7480MTRPbF ~~Ty~~ 

## ~~Cinfineon~~ 

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10<br>1 D = 0.50 Ssee<br>0.20<br>0.10<br>0.1<br>0.05<br>SBi eeeaOOG—=e MOLL |<br>0.02 Sa<br>0.01<br>0.01 SE ailend<br>Notes:<br>SINGLE PULSE<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>2. Peak Tj = P dm x Zthjc + Tc<br>rae Ee<br>0.001 eon eat<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Allowed avalanche Current vs avalanche<br>100 COT | pulsewidth, tav, assuming  Tj  = 125°C and<br>Tstart =25°C (Single Pulse)<br>TTR<br>10<br>OAs ooo<br>CLIT<br>1<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  j = 25°C and<br>Tstart = 125°C.<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Thermal Response ( Z thJC ) °C/W<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Avalanche Current vs. Pulse Width 

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100<br>TOP          Single Pulse<br>BOTTOM   1.0% Duty Cycle<br>80 I D  = 132A<br>60<br>N ttt tt yy<br>40 NENE EL<br>INN<br>20<br>SON<br>EEN EX<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy vs. Temperature 

**Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)** 

- 1.Avalanche failures assumption: 

   - Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). 

   - tav = Average time in avalanche. 

   - D = Duty cycle in avalanche =  tav ·f 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC 

      - Iav = 2T/ [1.3·BV·Zth] 

EAS (AR) = PD (ave)·tav 

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IRF7480MTRPbF ~~_~~ 

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Cinfin eon<br>4.0<br>3.5<br>3.0 PRN TT<br>SPR<br>ID = 150µA<br>2.5 ID = 250µA CBRN |<br>ID = 1.0mA<br>ID = 1.0A<br>anBANN<br>2.0<br>NS<br>1.5 FLLLL<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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9<br>IF = 88A<br>8 V R  = 34V<br>TJ = 25°C<br>7 T J  = 125°C<br>re<br>6<br>e—<br>5 Pann<br>4<br>4<br>3<br>WE<br>TLL<br>2<br>100 200 300 400 500 600 700<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

**Fig 18.** Typical Recovery Current vs. dif/dt 

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**----- Start of picture text -----**<br>
9<br>IF = 132A<br>8 V R  = 34V TI<br>TJ = 25°C<br>7 T J  = 125°C<br>6<br>aa<br>5<br>eae<br>4<br>TT<br>ALL<br>3 Ar<br>2<br>100 200 300 400 500 600 700<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


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200<br>IF = 88A<br>To<br>180 VR = 34V<br>TJ = 25°C<br>160 T J  = 125°C<br>9am<br>140<br>ne2ann<br>120<br>BZ<br>100 Zane<br>80 Zane<br>100 200 300 400 500 600 700<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

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200<br>IF = 132A<br>VR = 34V<br>160 T J = 25°C<br>TJ = 125°C<br>pe<br>120<br>ran<br>80<br>ACL<br>4G<br>40<br>100 200 300 400 500 600 700<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

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Cinfi 

IRF7480MTRPbF 

**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

**==> picture [148 x 88] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>RG D.U.T +<br>NW\= IAS - [V][DD]<br>20V<br>» dy tp 0.01<br>**----- End of picture text -----**<br>


**==> picture [182 x 106] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS<br>< tp ><br>IAS<br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

**==> picture [21 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>**----- End of picture text -----**<br>


**Fig 24b.** Switching Time Waveforms 

**==> picture [172 x 117] intentionally omitted <==**

**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

8 

2016-5-4 

~~Cinfineon~~ 

IRF7480MTRPbF ~~LLL~~ 

## **DirectFET[®] Board Footprint, ME Outline** 

## **(Medium Size Can, E-Designation)** 

Please see DirectFET[®] application note AN-1035 for all details regarding the assembly of DirectFET[®] . This includes all recommendations for stencil and  substrate designs. 

**==> picture [346 x 202] intentionally omitted <==**

**----- Start of picture text -----**<br>
G = GATE<br>D = DRAIN<br>S = SOURCE<br>A<br>D D<br>G<br>S S<br>!<br>A<br>S S S<br>D D<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

9 

2016-5-4 

~~Cinfineon~~ 

IRF7480MTRPbF ~~LLL~~ 

## **DirectFET[®] Outline Dimension, ME Outline** 

## **(Medium Size Can, E-Designation)** 

Please see DirectFET[®] application note AN-1035 for all details regarding the assembly of DirectFET[®] . This includes all recommendations for stencil and  substrate designs. 

**==> picture [118 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
DIMENSIONS<br>METRIC IMPERIAL<br>CODE MIN MAX MIN MAX<br>A 6.25 6.35 0.246 0.250<br>B 4.80 5.05 0.189 0.199<br>C 3.85 3.95 0.152 0.156<br>D 0.35 0.45 0.014 0.018<br>E 0.58 0.62 0.023 0.024<br>F 1.08 1.12 0.043 0.044<br>G 0.93 0.97 0.037 0.038<br>H 1.28 1.32 0.050 0.052<br>J 0.38 0.42 0.015 0.017<br>J1 0.58 0.62 0.023 0.024<br>K 0.88 0.92 0.035 0.036<br>L 2.08 2.12 0.082 0.083<br>L1 3.63 3.67 0.143 0.144<br>M 0.59 0.70 0.023 0.028<br>N 0.02 0.08 0.0008 0.003<br>P 0.08 0.17 0.003 0.007<br>**----- End of picture text -----**<br>


**==> picture [108 x 22] intentionally omitted <==**

**----- Start of picture text -----**<br>
Dimensions are shown in<br>millimeters (inches)<br>**----- End of picture text -----**<br>


## **DirectFET[® ] Part Marking** 

## LOGO 

**==> picture [228 x 132] intentionally omitted <==**

**----- Start of picture text -----**<br>
GATE MARKING<br>PART NUMBER<br>BATCH NUMBER<br>DATE CODE<br>Line above the last character of<br>the date code indicates "Lead-Free"<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

10 

2016-5-4 

~~Cinfineon~~ 

IRF7480MTRPbF ~~rd~~ 

## **DirectFET[® ] Tape & Reel Dimension (Showing component orientation).** 

NOTE: Controlling dimensions in mm 

Std reel quantity is 4800 parts. (ordered as IRF7480MTRPBF). For 1000 parts on 7" reel, order   IRF7480MTR1PBF 

|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF7480MTRPBF). For 1000 parts on 7"<br>reel, order   IRF7480MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF7480MTRPBF). For 1000 parts on 7"<br>reel, order   IRF7480MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF7480MTRPBF). For 1000 parts on 7"<br>reel, order   IRF7480MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF7480MTRPBF). For 1000 parts on 7"<br>reel, order   IRF7480MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF7480MTRPBF). For 1000 parts on 7"<br>reel, order   IRF7480MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF7480MTRPBF). For 1000 parts on 7"<br>reel, order   IRF7480MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF7480MTRPBF). For 1000 parts on 7"<br>reel, order   IRF7480MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF7480MTRPBF). For 1000 parts on 7"<br>reel, order   IRF7480MTR1PBF|
|---|---|---|---|---|---|---|---|
|**REEL DIMENSIONS**<br>MAX<br>IMPERIAL<br>MIN<br>STANDARD OPTION**(QTY 4800)**<br>CODE<br>MAX<br>MIN<br>METRIC<br>MIN<br>TR1 OPTION**(QTY 1000)**<br>MAX<br>MIN<br>METRIC<br>MAX<br>IMPERIAL||||||||
|330.0<br>A|330.0<br>N.C|12.992|N.C|177.77|N.C|6.9|N.C|
|20.2<br>B|20.2<br>N.C|0.795|N.C|19.06|N.C|0.75|N.C|
|12.8<br>C|12.8<br>13.2|0.504|0.520|13.5|12.8|0.53|0.50|
|1.5<br>D|1.5<br>N.C|0.059|N.C|1.5|0.059<br>N.C|0.059|N.C|
|100.0<br>E|100.0<br>N.C|3.937|N.C|58.72|N.C|2.31|N.C|
|N.C<br>F|N.C<br>18.4|N.C|0.724|N.C|13.50|N.C|0.53|
|12.4<br>G|12.4<br>14.4|0.488|0.567|11.9|12.01|0.47|N.C|
|11.9<br>H|11.9<br>15.4|0.469|0.606|11.9|12.01|0.47|N.C|



## LOADED TAPE FEED DIRECTION 

## DIMENSIONS 

|||METRIC|METRIC|IMPERIAL|IMPERIAL|
|---|---|---|---|---|---|
|NOTE: CONTROLLING<br>DIMENSIONS IN MM|CODE|MIN|MAX|MIN|MAX|
||A|7.90|8.10|0.311|0.319|
||B|3.90|4.10|0.154|0.161|
||C|11.90|12.30|0.469|0.484|
||D|5.45|5.55|0.215|0.219|
||E|5.10|5.30|0.201|0.209|
||F|6.50|6.70|0.256|0.264|
||G|1.50|N.C|0.059|N.C|
||H|1.50|1.60|0.059|0.063|



Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

11 

2016-5-4 

~~Cinfineon~~ 

IRF7480MTRPbF ~~rd~~ 

**Qualification Information[† ]** 

Industrial * **Qualification Level** (per JEDEC JESD47F[††] guidelines) MSL1 **Moisture Sensitivity Level** DFET 1.5 (per JEDEC J-STD-020D[††)] **RoHS Compliant** Yes ~~——~~ †        Qualification standards can be found at International Rectifier’s web site 

- http://www.irf.com/product info/reliability 

††      Applicable version of JEDEC standard at the time of product release. 

* Industrial qualification standards except autoclave test conditions. 

## **Revision History** 

|**Date**|**Comments**|
|---|---|
|11/07/2014|<br>Updated EAS (L =1mH)= 206mJ  on page 2<br><br>Updated note 9  “Limited by TJmax, starting TJ= 25°C, L = 1mH, RG= 50, IAS= 20A, VGS=10V” on page 3<br><br>Updated RJA from  “60°C/W” to “45°C/W”  onpage 2.|
|05/14/2015|<br>Updated registered trademark from  DirectFETTMto DirectFET®on page 1,9 and 10.|
|05/04/2016|<br>Updated datasheet with corporate template.<br><br>Added ID(double- sided   cooling)= 300A onpages1 and 2.|



**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

12 2016-5-4 ~~ee~~ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF7480MTRPBF/power-mosfet-n-channel-40-v-330-a-950-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf7480mtrpbf/mosfet-n-ch-40v-330a-directfet/dp/2709878)
---

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