# Power MOSFET, N Channel, 12 V, 15 A, 8000 µohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:1298486/)

**URL**: https://novapart.co/products/IRF7476PBF/power-mosfet-n-channel-12-v-15-a-8000-ohm-soic
**SKU**: IRF7476PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3920
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.9V; Power Dissipa

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 12V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 15A |
| Drain Source On State Resistance | 8000µohm |
| Gate Source Threshold Voltage Max | 1.9V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1298486/)

PD - 94311 

## IRF7476 

## HEXFET[®] Power MOSFET 

## **Applications** 

High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications. Power Management for Netcom, Computing and Portable Applications. 

## **Benefits** 

Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage and Current 

|**VDSS**|**RDS(on) max**|**ID**|
|---|---|---|
|**12V**|**8.0mΩ@VGS = 4.5V**|**15A**|



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A<br>A<br>S 1 8 D<br>S 2 7 D<br>S 3 6 D<br>G 4 5 D<br>SO-8<br>Top View<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|**Symbol**<br>Po|**Parameter**<br>Po|**Max.**<br>Po|**Units**<br>Po|
|---|---|---|---|
|VDS<br>I|Drain-Source Voltage<br>I|12<br>I|V<br>I|
|VGS<br>GO<br>~~ns~~<br>~~——————————~~|GSGate-to-Source Voltage<br>±12                                   V<br>GO<br>~~——————————~~|±12                                   V<br>GO<br>~~ne~~|±12                                   V<br>GO<br>~~ne~~|
|ID@ TA= 25°C<br>~~ns~~<br>~~——————————~~|Continuous Drain Current, VGS@ 10V<br>~~——————————~~|15<br>~~ne~~|A<br>~~ne~~|
|ID @TA= 70°C<br>~~ns~~<br>~~——————————~~<br>~~ee~~|Continuous Drain Current,VGS @10V<br>~~——————————~~<br>~~Oe~~|12<br>~~ne~~<br>~~Oe~~||
|IDM<br>~~——————————~~<br>~~ee~~<br>~~Re~~|Pulsed Drain Current<br>~~——————————~~<br>~~Oe~~<br>~~nN©~~|120<br>~~ne~~<br>~~Oe~~||
|PD@TA= 25°C<br>~~——————————~~<br>~~ee~~<br>~~Re~~|Maximum Power Dissipation<br>~~——————————~~<br>~~Oe~~<br>~~nN©~~|2.5<br>~~ne~~<br>~~Oe~~|W<br>~~ne~~|
|PD@TA= 70°C<br>~~Re~~|Maximum Power Dissipation<br>~~nN©~~|1.6|W|
|Linear Deratin<br>~~a~~|Linear DeratingFactor                                                                     0.02                              W/°C|Factor                                                                     0.02                              W/°C|Factor                                                                     0.02                              W/°C|
|TJ, TSTG|Junction and Storage Temperature Range|-55  to + 150|°C|



## **Thermal Resistance** 

|**Symbol**<br>~~ee~~<br>||**Parameter**<br>~~en~~<br>~~Ps~~<br>5<br>————}+———|**Typ.**<br>~~en~~<br>————}+———|**Max.**<br>~~en~~<br>————}+———|**Units**<br>~~en~~<br>||
|---|---|---|---|---|
|RθJL<br>~~ee~~<br>||Junction-to-Drain Lead<br>~~en~~<br>~~Ps~~<br>5<br>————}+———|–––<br>~~en~~<br>————}+———|20<br>~~en~~<br>————}+———|°C/W<br>~~en~~<br>||
|RθJA<br>||Junction-to-Ambient<br>~~Ps~~<br>5<br>————}+———|–––<br>————}+———|50<br>————}+———||



Notes hrough are on page 8 

www.irf.com 

1 

04/29/02 

## IRF7476 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Parameter**<br>**Min. Typ. Max.**<br>**Units**<br> **Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>12<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250µA<br>∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient –––     0.014    –––   V/°C    Reference to 25°C, ID= 1mA<br>–––<br>6.0<br>8.0<br>VGS= 4.5V, ID= 15A<br>–––<br>12<br>30<br>VGS= 2.8V, ID= 12A<br>VGS(th)<br>Gate Threshold Voltage<br>0.6<br>–––<br>1.9<br>V<br>VDS= VGS, ID= 250µA<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>mΩ<br>rs<br>ts rsre rs<br>en<br>~~GG~~<br>~~Rs~~<br>~~ns es~~<br>~~Be~~<br>===<br>~~es~~|
|---|
|–––<br>–––<br>100<br>µA<br>VDS= 9.6V, VGS= 0V<br>–––<br>–––<br>250<br>VDS= 9.6V, VGS= 0V, TJ= 125°C<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>200<br>VGS= 12V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-200<br>nA<br>VGS= -12V<br>IGSS<br>IDSS<br>Drain-to-Source Leakage Current<br>~~|~~<br>~~Pf~~<br>~~**|**~~<br>~~ef~~<br>~~Ps~~<br>rs Ge|
|**Dynamic @ TJ = 25°C (unless otherwise specified)**|
|**Symbol**<br>**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br> **Conditions**<br>gfs<br>Forward Transconductance<br>31<br>–––<br>–––<br>S<br>VDS= 6.0V, ID= 12A<br>ee<br>ee ee<br>ee<br>es|
|Qg<br>Total Gate Charge<br>–––<br>26      40                ID= 12A<br>Qgs<br>Gate-to-Source Charge<br>–––<br>4.6<br>–––<br>nC<br>VDS= 10V<br>Qgd<br>Gate-to-Drain ("Miller") Charge<br>–––<br>11<br>–––<br>VGS= 4.5V<br>~~ee~~<br>es<br>~~Rs~~|
|Qoss<br>Output Gate Charge<br>–––<br>17<br>–––<br>VGS= 0V, VDS= 5.0V<br>a|
|ns<br>td(on)<br>Turn-On Delay Time<br>–––<br>11<br>–––<br>VDD= 6.0V<br>tr<br>Rise Time<br>–––<br>29<br>–––<br>ID= 12A<br>td(off)<br>Turn-Off Delay Time<br>–––<br>19<br>–––<br>RG= 1.8Ω<br>tf<br>Fall Time<br>–––<br>8.3<br>–––<br>VGS= 4.5V<br>Ciss<br>Input Capacitance<br>–––<br>2550<br>–––<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>2190<br>–––<br>VDS= 6.0V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>450<br>–––<br>pF<br>ƒ = 1.0MHz<br>a<br>aee<br>ee<br>eeee<br>~~ee~~<br>~~a~~<br>es<br>~~a~~|



**Dynamic @ TJ = 25°C (unless otherwise specified)** 

## **Avalanche Characteristics** 

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Symbol Parameter Typ. Max. Units<br>EAS Single Pulse Avalanche Energy ––– 160 mJ<br>es<br>oe IAR Avalanche Current ––– 12 A<br>Diode Characteristics<br>Symbol Parameter Min. Typ. Max. Units Conditions<br>IS Continuous Source Current ––– ––– 2.5 MOSFET symbol D<br>(Body Diode) showing  the<br>A<br>ISM Pulsed Source Current ––– ––– 120 integral reverse G<br>T (Body Diode)  p-n junction diode. S<br>VSD Diode Forward Voltage ––– 0.87 1.2 V TJ = 25°C, IS = 12A, VGS = 0V<br>| | ––– | 0.73 ––– TJ = 125°C, IS = 12A, VGS = 0V  ®<br>trr Reverse Recovery Time ––– 55 82 ns TJ = 25°C, IF = 12A, VR=12V<br>ee Qrr RR Reverse Recovery Charge ––– 59 89 nC di/dt = 100A/µs ©)<br>trr Reverse Recovery Time ––– 54 81 ns TJ = 125°C, IF = 12A, VR=12V<br>Sees Qrr Reverse Recovery Charge ––– 60 90 nC di/dt = 100A/µs ®<br>2 www.irf.com<br>**----- End of picture text -----**<br>


## IRF7476 

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1000<br>            VGS<br> TOP        10V<br>                 8.0V<br>100 e e) peeene|               5.0V<br>                4.5V<br>                3.5V<br>                2.7V<br>10 e o | |                 2.0V<br>BOTTOM 1.5V<br>1 a ea e ee|—— ell<br>en eee ee<br>0.1 |r r<br>1.5V<br>F Ee e aHEeeeeeHH<br>0.01<br>20µs PULSE WIDTH<br>Pe a Tj = 25°C ET<br>0.001<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000.00<br>eseseses<br>100.00 ae T e = 150°C ee— ee ee<br>J<br>10.00 A V7 F |}| |<br>S SSESSE<br>PFFp<br>T = 25°C<br>J<br>1.00 2he eee ee eeeee ee<br>V = 10V<br>0Faeee eeeee ee DS  ;<br>20µs PULSE WIDTH<br>0.10 yf [{|_|] fp} ft SY<br>1.5 2.0 2.5 3.0 3.5 4.0<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>)<br>(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000<br>            VGS<br> TOP        10V<br>                 8.0V<br>FP CEE               5.0V<br>100<br>                4.5V<br>                3.5V<br>Year                 2.7V                2.0V<br>10 BOTTOM 1.5V<br>S SS.ESS SSL eee<br>ae|e ee<br>1<br>p —| |} 1.5V |<br>e pee— eee<br>a e ee ee a ee eeee T ee ee<br>0.1<br>20µs PULSE WIDTH<br>0.01 elie Tj = 150°C meni<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

**==> picture [204 x 192] intentionally omitted <==**

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2.0<br>I D = 15A<br>1.5 PEELEALLELEEEE ELE |<br>1.0 ecpypra peaaee ctttil||<br>|r |<br>0.5 PEELEELE EEEEEE<br>0.0 LEE EEE EE V GS = 4.5V<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>Tj, Junction Temperature (°C)<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

www.irf.com 

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## IRF7476 

**==> picture [435 x 202] intentionally omitted <==**

**----- Start of picture text -----**<br>
100000 6<br>VGS   = 0V,       f = 1 MHZ ID = 12A<br>-— = CCiss rss    = C = Cgs gd + Cgd,  Cds SHORTED 5 ee Pt Tt | VVVDSDSDS ===  9.6V 6V 2.4V aanTo<br>— Coss  = Cds + Cgd Pt tt | Se<br>10000 i 4 PI E TTTYgry<br>a ee ee ee eee<br>C 3<br>iss<br>Coss<br>1000 a a aeenlll 2 Sannn,/ Anne<br>p t ptt iaear e  t<br>Crss 1<br>Pee eee TTT EEE<br>100 PT EE EE 0 Annan<br>1 10 100 0 5 10 15 20 25 30<br>VDS, Drain-to-Source Voltage (V) Q   , Total Gate Charge (nC)G<br>GS<br>V     , Gate-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

## **Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

**==> picture [194 x 190] intentionally omitted <==**

**----- Start of picture text -----**<br>
 1000<br>a ee eee eee<br> 100<br>ff et<br>oe i<br>T  = 150      CJ °<br> 10 A<br>T  = 25      CJ °<br> 1<br>Sone eeee eee<br>OEE V      = 0 V GS<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD, Source-to-Drain Voltage (V)<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1000<br>OPERATION IN THIS AREA<br>pt LIMITED BY R DS(on) ll<br>100<br>pose T TT<br>100µsec<br>S S P<br>10 1msec HE<br>S a KA Rl<br>10msec<br>1<br>Ee<br>Tc = 25°C<br>Tj = 150°C<br>0.1 Single Pulse ICE ol<br>0 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


## **Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

www.irf.com 

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## IRF7476 

**==> picture [437 x 478] intentionally omitted <==**

**----- Start of picture text -----**<br>
15<br>RD<br>SNE VDS |<br>12 Pp} AA ET yt VGS D.U.T.<br>RG<br>ptt | NEE yt +<br>- [V] DD<br>9 Pt tT | |INET<br>ERR ; 4.5V<br>Pulse Width ≤ 1 µs<br>6 Pt tT | EE Duty Factor ≤ 0.1 %<br>ptt | tT EN<br>SRR Fig 10a.   Switching Time Test Circuit<br>3<br>VDS<br>Sees enn 90% —<br>SERRE Y<br>0<br>25 50 75 100 125 150 |<br>Tc, Case Temperature (°C)°<br>10%<br>Fig 9.    Maximum Drain Current Vs. VGS<br>Case Temperature td(on) tr td(off) tf<br>Fig 10b.   Switching Time Waveforms<br> 100<br>SSe D = 0.50 S meeesstSemestere ei<br> 10 e 0.20 ee<br>0.10<br>0.05<br>ee ae<br>S es 0.02 iiieeD> etal memati ee e e P DM e<br> 1 r 0.01 T t 1<br>SINGLE PULSE<br>(THERMAL RESPONSE) t 2<br>aeay eEEEH ee Notes:<br>1. Duty factor D = t   / t1 2<br>Se e eee 2. Peak T J = P DM x  Z thJA + T A<br>0.1<br>0.0001 0.001 0.01 0.1  1  10  100  1000<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJA<br>(Z          )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 10.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

www.irf.com 

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## IRF7476 

**==> picture [439 x 202] intentionally omitted <==**

**----- Start of picture text -----**<br>
7.5 Pf | ot | 15.00 r eee<br>13.00<br>7.3<br>p t} EP A e<br>S e) e ee<br>11.00<br>VGS = 4.5V<br>7.0 ran Fe [TLELLES]<br>9.00<br>r y TL COAT P e1<br>6.8 A ID = 15A<br>7.00<br>P S) Se<br>6.5 ee 5.00 PE ee<br>0 20 40 60 80 100 120 2.0 4.0 6.0 8.0 10.0<br>ID , Drain Current (A) VGS, Gate -to -Source Voltage  (V)<br>)<br>Ω<br>RDS (on) , Drain-to-Source On Resistance (m<br>)<br>Ω<br>RDS(on) ,  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 12.** On-Resistance Vs. Drain Current 

**Fig 13.** On-Resistance Vs. Gate Voltage 

**==> picture [433 x 240] intentionally omitted <==**

**----- Start of picture text -----**<br>
Current Regulator<br>Same Type as D.U.T.<br>QG<br>12V .2µF 50KΩ VGS<br>.3µF QGS QGD<br>D.U.T. +-VDS VG 400 I D<br>VGS TOP 5.4A<br>3mA Charge 9.6A<br>OESwho IG ID | : KENee BOTTOM 12A<br>Current Sampling Resistors 300 E NE<br>Fig 13a&b.   Basic Gate Charge Test Circuit<br>and Waveform<br>200<br>ERNE EEEEEe<br>IATPE<br>15 V<br>100<br>BNNANEEEEE<br>V (B R )D S S<br>tp VD S L DRIVER<br>4 poSAN<br>R G D .U .T +<br>- [VD D] 0<br>IAS A 25 50 75 100 125 150<br>20V<br>I A S \ go d t t p 0.01Ω Starting Tj, Junction Temperature (°C)<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14a&b.** Unclamped Inductive Test circuit and Waveforms 

6 

**Fig 14c.** Maximum Avalanche Energy Vs. Drain Current 

www.irf.com 

IRF7476 

## **SO-8 Package Details** 

**==> picture [355 x 338] intentionally omitted <==**

**----- Start of picture text -----**<br>
DIM re INCHES MILLIMETERS<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>fa 6 le H i D .189 .1968 4.80 5.00<br>E<br>0.25 [.010]  A E .1497 .1574 3.80 4.00<br>a 1 2 3 4 === e .050  BASIC 1.27  BASIC<br>i jr<br>e1 .025  BASIC 0.635  BASIC<br>Tor o oe H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X oH} e ok en L .016 .050 0.40 1.27<br>ee ee<br>a y  0°  8°  0°  8°<br>e1 K x 45°<br>A<br>> re] C qe<br>y<br>0.10 [.004]<br>an 8X b v A1 o X SL 8X L 8X c Tf<br>0.25 [.010]  C A B 7<br>fer OrTT1<br>FOOTPRINT<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6.46 [.255] ; [o] n ae [od]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>U UW<br>3X 1.27 [.050] woe<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## NOTES: 

1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 

2.  CONTROLLING DIMENSION: MILLIMETER 

3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 

- 5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 

- 7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 

## **SO-8 Part Marking** 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

**==> picture [195 x 64] intentionally omitted <==**

**----- Start of picture text -----**<br>
YWW<br>XXXX<br>INTERNATIONAL F7101<br>ae<br>RECTIFIER<br>LOGO<br>**----- End of picture text -----**<br>


DATE CODE (YWW) Y =  LAST DIGIT OF THE YEAR WW =  WEEK 

LOT CODE PART NUMBER 

www.irf.com 

7 

## IRF7476 

## **SO-8 Tape and Reel** 

**==> picture [173 x 113] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERM INAL NUM BER 1<br>oOo 6) fF<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )7.9 ( .312 ) | FEED DIRECTIO N |<br>**----- End of picture text -----**<br>


N OTES: 

1.   CO NTRO LLING  DIM EN SION  : M ILLIM ETER. 

2.   ALL DIM ENSION S ARE SH O W N  IN M ILLIM ETERS (IN CHES ). 

3.   OU TLIN E CO NFO RM S TO  EIA-481  &  EIA-541. 

**==> picture [154 x 68] intentionally omitted <==**

**----- Start of picture text -----**<br>
 330.00<br>(12.992)<br>  MAX.<br>VAY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CO NTRO LLING DIMENSIO N : MILLIM ETER. 

2. O UTLINE CONFO RM S TO  EIA-481 & EIA-541. 

## **Notes:** 

Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 2.3mH RG = 25Ω, IAS = 12A. 

Pulse width ≤ 400µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 04/02 

www.irf.com 

8 



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---

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