# Power MOSFET, N Channel, 40 V, 10 A, 0.013 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2577185/)

**URL**: https://novapart.co/products/IRF7470TRPBF/power-mosfet-n-channel-40-v-10-a-0013-ohm-soic
**SKU**: IRF7470TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7490
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 10A |
| Drain Source On State Resistance | 0.013ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2577185/)

## **SMPS MOSFET** 

## IRF7470PbF 

## **Applications** 

High Frequency DC-DC Converters with Synchronous Rectification Lead-Free 

## HEXFET Power MOSFET 

|**VDSS**|**RDS(on) max**|**ID**|
|---|---|---|
|**40V**|**13m**Ω|**10A**|



## **Benefits** 

Ultra-Low Gate Impedance 

Very Low RDS(on) at 4.5V VGS 

Fully Characterized Avalanche Voltage and Current 

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A<br>A<br>S 1 8 D<br>S 2 7 D<br>S 3 6 D<br>G 4 5 D<br>SO-8<br>Top View<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

**Symbol Parameter Max. Units** eses VDS Drain-Source Voltage 40 V eeGO VGS Gate-to-Source Voltage ± 12                                   V ~~Rs Rs~~ ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 10 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 8.5 A ~~**e**~~ IDM Pulsed Drain Current ~~ee~~ 85 ~~nS~~ PD @TA = 25°C Maximum Power Dissipation ~~©~~ 2.5 W ~~©~~ PD @TA = 70°C Maximum Power Dissipation 1.6 W Linear Derating Factor                                                                     0.02                              W/°C ~~a es~~ TJ , TSTG Junction and Storage Temperature Range -55  to + 150 °C 

## **Thermal Resistance** 

|~~ee~~|||||
|---|---|---|---|---|
|**Symbol**<br>~~ee~~<br>~~Se~~|**Parameter**<br>~~Se~~<br>~~nn~~|**Typ.**<br>~~ee~~|**Max.**<br>~~EE~~|**Units**|
|RθJL<br>~~ee~~<br>~~Se~~<br>es|Junction-to-Drain Lead<br>~~Se~~<br>~~nn~~<br>~~nD~~|–––<br>~~ee~~<br>~~nD~~|20<br>~~EE~~<br>~~nD~~|°C/W|
|RθJA<br>~~Se~~<br>es|Junction-to-Ambient<br>~~Se~~<br>~~nn~~<br>~~nD~~|–––<br>~~ee~~<br>~~nD~~|50<br>~~EE~~<br>~~nD~~||



Notes oO) hrough @) are on page 8 www.irf.com 

1 

## IRF7470PbF 

## **Static @ TJ = 25°C (unless otherwise specified)** 

|**Static @ TJ = 25°C (unless otherwise specified)**|**Static @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)**|
|---|---|
|V(BR)DSS<br>∆V(BR)DSS/∆TJ|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br> **Conditions**<br>Drain-to-Source Breakdown Voltage<br>40<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250µA<br>JBreakdown Voltage Temp. Coefficient –––     0.04    –––     V/°C    Reference to 25°C, ID= 1mA<br>rs<br>rd rs<br>ns<br>Rs<br>~~es~~<br>~~Ge~~|
||–––<br>9.0<br>13<br>VGS= 10V, ID= 10A<br>~~Ff~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>–––<br>10<br>15<br>mΩ<br>VGS= 4.5V, ID= 8.0A<br>HEE|
||–––<br>14.5<br>30<br>VGS= 2.8V, ID= 5.0A<br>fT<br>@|
|VGS(th)|Gate Threshold Voltage<br>0.8<br>–––<br>2.0<br>V<br>VDS= VGS, ID= 250µA<br>~~a~~<br>~~G~~|
|IGSS<br>IDSS|Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>µA<br>VDS= 32V, VGS= 0V<br>–––<br>–––<br>100<br>VDS= 32V, VGS= 0V, TJ= 125C<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>200<br>VGS= 12V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-200<br>nA<br>VGS= -12V<br>~~eS~~<br>~~||~~<br>~~ee~~|



## **Dynamic @ TJ = 25°C (unless otherwise specified)** 

|**Dynamic @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)**|||||
|---|---|---|---|---|
|**Symbol**<br>**Parameter**<br>**Min. Typ. Max.**<br>**Units**<br>gfs<br>Forward Transconductance<br>27<br>–––<br>–––<br>S<br>ee<br>eeee ee<br>es|<br>VDS= 20V, I||**Conditions**<br>= 20V, ID= 8.0A||
|Qg<br>Total Gate Charge<br>–––<br>29      44                I<br>~~a~~|29      44                ID= 8.0A||||
|ns<br>Qgs<br>Gate-to-Source Charge<br>–––<br>7.9<br>12<br>nC<br>Qgd<br>Gate-to-Drain ("Miller") Charge<br>–––<br>8.0<br>12<br>Qoss<br>Output Gate Charge<br>–––<br>23<br>35<br>td(on)<br>Turn-On Delay Time<br>–––<br>10<br>–––<br>tr<br>Rise Time<br>–––<br>1.9<br>–––<br>td(off)<br>Turn-Off Delay Time<br>–––<br>21<br>–––<br>tf<br>Fall Time<br>–––<br>3.2<br>–––<br>Ciss<br>Input Capacitance<br>–––<br>3430<br>–––<br>Coss<br>Output Capacitance<br>–––<br>690<br>–––<br>~~ee~~<br>Re<br>a es<br>ee<br>a es<br>ee<br>a ee<br>ee<br>a~~Se~~<br>~~ee~~<br>~~se~~<br>~~a es~~|VDS= 20V<br>VGS= 4.5V<br>VGS= 0V, VDS= 16V<br>VDD= 20V<br>ID= 8.0A<br>RG= 1.8Ω<br>VGS= 4.5V<br>VGS= 0V<br>VDS= 20V<br>®||||
|Crss<br>Reverse Transfer Capacitance<br>–––<br>41<br>–––<br>pF|ƒ = 1.0MHz||||
|**Avalanche Characteristics**|||||
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>EAS<br>Single Pulse Avalanche Energy<br>–––<br>300<br>IAR<br>Avalanche Current<br>–––<br>8.0<br>————————<br>eseG||||**Units**<br>mJ<br>A|
|**Diode Characteristics**|||||



|**Symbol**<br>~~>~~|**Parameter**<br>~~>~~|**Min. **|**Typ. **|**Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS<br>~~>~~|Continuous Source Current<br>(Body Diode)<br>~~>~~|–––|–––|2.3||MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>S<br>D<br>G|
|ISM|Pulsed Source Current<br>(Body Diode)|–––|–––|85|||
|VSD<br>i<br>Re|Diode Forward Voltage<br>i|–––|0.80|1.3<br>_|V|TJ= 25°C, IS= 8.0A, VGS= 0V<br>°|
|||–––<br>ee|0.65<br>ee|–––<br>_<br>ee||TJ= 125°C, IS= 8.0A, VGS= 0V<br>°|
|trr<br>Re<br>~~es~~|Reverse Recovery Time|–––<br>ee|72<br>ee|110<br>ee|ns|TJ= 25°C, IF= 8.0A, VR= 20V<br>di/dt=100A/µs<br>~~®~~|
|Qrr<br>Re<br>~~es~~|Reverse Recovery Charge|–––<br>ee|130<br>ee|200<br>ee|nC||
|trr<br>~~es~~<br>~~Sn~~<br>es|Reverse Recovery Time<br>~~Sn~~|–––<br>~~Sn~~|76<br>~~Sn~~|110<br>~~Sn~~|ns<br>~~Sn~~|TJ= 125°C, IF= 8.0A, VR=20V<br>di/dt = 100A/µs<br>~~®~~<br>~~Sn~~<br>®|
|Qrr<br>~~Sn~~<br>es|Reverse Recovery Charge<br>~~Sn~~|–––<br>~~Sn~~|150<br>~~Sn~~|230<br>~~Sn~~|nC<br>~~Sn~~||



## IRF7470PbF 

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**----- Start of picture text -----**<br>
 1000<br>VGS Pett Ee EE<br>TOP 15V<br>10V<br>4.5V<br>3.0V<br>2.7V<br>2.5V<br>2.25V<br>BOTTOM 2.0V<br> 100 ee<br>eee ae| et|<br>Ben<br> 10 Bec TT |<br>Oe 2.0V<br>cenit ane eet eet<br>20µs PULSE WIDTH<br>T IT T  = 25J °C<br> 1<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics<br> 100 ===a eeee ee ee ee ee<br>T  = 150  CJ °<br>lL<br>fa7| T  = 25  CJ tft ° tt<br> 10 aeaineeeeea A LZ ee ee<br>a<br>PEEEEPECPA<br>V      = 25VDS<br>20µs PULSE WIDTH<br> 1 Pi tti<br>2.0 2.2 2.4 2.6 2.8 3.0<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   ,  Drain-to-Source Current (A)<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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 100 VGS SS<br>TOP 15V<br>10V<br>4.5V<br>3.0V<br>2.7V<br>2.5V<br>2.25V<br>BOTTOM 2.0V<br> /ll<br>/ 1, ge 2.0V<br> 10<br>7<br>a<br>7eo<br>IIE IT<br>20µs PULSE WIDTH<br>LAM LE T  = 150J °C<br> 1<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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**----- Start of picture text -----**<br>
2.5<br>ID = 10A<br>P ereOSH U UR RRRRROOD<br>2.0<br>1.5 PEELE ELAA<br>HERE GEREGERE D SZq00RE0Eud<br>1.0 PEELEETTLTer|<br>0.5<br>tne<br>VGS = 10V<br>0.0 PPEEEEEEEEE PE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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## IRF7470PbF 

**==> picture [210 x 197] intentionally omitted <==**

**----- Start of picture text -----**<br>
100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = Cgs + Cgd,   Cds    SHORTED<br>=e: Crss    = Cgd<br>ani C  = C + C<br>10000 oss   ds  gd<br>oo Ciss TT<br>1000 Coss<br>e e<br>100 N E eel<br>Pe Crss<br>10 ee lll<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

**==> picture [197 x 192] intentionally omitted <==**

**----- Start of picture text -----**<br>
 100<br>T  = 150  CJ °<br>Po AA<br> 10 co pa<br>== 2e======<br>T  = 25  CJ °<br>SAR dR<br> 1 ee<br>Yr if Jf | ft tT fT<br>oe V      = 0 V GS<br>0.1 PP yt; te ep<br>0.2 0.6 1.0 1.4 1.8 2.2<br>V     ,Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**==> picture [202 x 471] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>ID = 8.0A<br>VDS = 32V<br>8 py if i V e DS = 20V re<br>Pi {tt i Sea<br>6 4<br>|) DALE<br>4<br>4<br>2<br>/<br>ZR<br>0<br>0 10 20 30 40 50 60<br>Q   , Total Gate Charge (nC)G<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br> 1000<br>OPERATION IN THIS AREA LIMITED<br>BY R<br>DS(on)<br>Ce<br> 100<br>Et<br>Se eeecoee 10us n<br>100us<br> 10 CE O N<br>CAI N<br>1ms<br> T TAJ = 25  C= 150  C° ° a eeeel 10ms<br>p  Single Pulse f ep ON<br> 1 LE<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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**Fig 6.** On-Resistance Vs. Drain Current 

## IRF7470PbF 

**==> picture [431 x 473] intentionally omitted <==**

**----- Start of picture text -----**<br>
10.0<br>BNENN Vos +o<br>8.0 PE RAAT ET Ves<br>tt NEE Ro POT -<br>6.0<br>ptt PINE Tt | Voo<br>pitt tT TENET FF tov ≤ 1<br>4.0 Pt tt] tT tel Ne PuWidths ≤ 0.1 %<br>Fig 10a.   Switching Time Test Circuit<br>2.0<br>VDS<br>Pi tt} ty tt Y 90% —<br>0.0<br>25 50 75 100 125 150<br>T   , Case TemperatureC (  C)°<br>|| ft | ft | tt tt 10% / \ OYX<br>VGS f\« le >|\ pl< ><br>td(on) tr td(off) tf<br>Fig 10b.   Switching Time Waveforms<br> 100<br>D = 0.50<br>a sec<br> 10 a 0.20 e e ect eton |<br>0.10<br>0.05<br>= esSeer|errr rr rr rr<br>0.02<br> 1 PN eS oer el|<br>= 0.01 Seee<br>a PDM<br>t1<br>0.1 a cl (THERMAL RESPONSE)SINGLE PULSE t2<br>ST a<br>e ees ee ee ee ee eee Notes:<br>e e 1. Duty factor D = t   / t1 2<br>a i eeeee 2. Peak T J = P DM x  Z thJA + TA<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 10.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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## IRF7470PbF 

**==> picture [209 x 200] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.030<br>P f<br>0.025 | | | | |<br>Pot ff [ee]<br>0.020 ELT| }Z s<br>a V = 2.7V aa<br>GS<br>0.015<br>a -aae<br>VGS = 4.5V<br>To<br>VGS = 10V<br>| Fr.<br>0.010<br>0 10 20 30 40 50 60<br>ID , Drain Current (A)<br>)<br>Ω<br>RDS (on) , Drain-to-Source On Resistance (<br>**----- End of picture text -----**<br>


**==> picture [211 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.020<br>0.018<br>0.016<br>0.014<br>ID = 10A<br>0.012<br>0.010<br>2 4 6 8 10 12 14 16<br>VGS, Gate -to -Source Voltage  (V)<br>)<br>Ω<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 12.** On-Resistance Vs. Drain Current 

**Fig 13.** On-Resistance Vs. Gate Voltage 

**==> picture [434 x 237] intentionally omitted <==**

**----- Start of picture text -----**<br>
Current Regulator<br>Same Type as D.U.T.<br>QG<br>50KΩ<br>12V .2µF<br>.3µF QGS QGD<br>T D.U.T. r +-VDS VG 800 ID<br>VGS TOP 3.6A<br>3mA Charge 6.4A<br>BOTTOM 8.0A<br>On. Current (a IGSampling ResistorsID | Pp : 600 ENeeR ppU<br>Fig 13a&b.   Basic Gate Charge Test Circuit<br>and Waveform 400 PN| ff<br>KOA<br>15V 200<br>SYNC<br>V(BR)DSS(BR)DSS<br>tp VDS L DRIVER<br>- SSC<br>R G D.U.T + 0 SSS<br>IASAS - [[V][DD]][[DD]] A 25 50 75 100 125 150<br>20V °<br>tpp 0.01ΩΩ Starting T  , Junction TemperatureJ (  C)<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**==> picture [213 x 75] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>V(BR)DSS(BR)DSS<br>tp VDS L DRIVER<br>-<br>R G D.U.T +<br>- [[V][DD]][[DD]]<br>IASAS<br>20V<br>I AS tpp 0.01ΩΩ<br>**----- End of picture text -----**<br>


**Fig 14a&b.** Unclamped Inductive Test circuit and Waveforms 

6 

**Fig 14c.** Maximum Avalanche Energy Vs. Drain Current 

www.irf.com 

## IRF7470PbF 

## **SO-8 Package Outline** 

Dimensions are shown in millimeters (inches) 

**==> picture [356 x 336] intentionally omitted <==**

**----- Start of picture text -----**<br>
INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>non 8 7 6 5 ff ee cb .0075.013 .0098.020 ee 0.190.33 0.250.51 ee<br>ra E : 6 H ===es D .189 .1968 4.80 5.00<br>0.25 [.010]  A E .1497 .1574 3.80 4.00<br>1 2 3 4<br>e .050  BASIC 1.27  BASIC<br>—— ee<br>e1 .025  BASIC 0.635  BASIC<br>TOT TT | aen ee ee<br>H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X oh e esPE L .016 .050 0.40 1.27<br>y  0°  8°  0°  8°<br>es<br>e1 K x 45°<br>A<br>= FL C nai<br>y<br>JLSSe 8X b A1 n | : 0.10 [.004]  i S L f 8X L n 8X c 2)<br>fe. 0.25 [.010]  @ C TTI A B 7<br>FOOTPRINT<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>[rT]<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. | Toa [|]<br>6.46 [.255]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>| gus<br>3X 1.27 [.050] a ok<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## NOTES: 

1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 

2.  CONTROLLING DIMENSION: MILLIMETER 

3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 

4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 

- 5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 

- 7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 

## **SO-8 Part Marking** 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

## DATE CODE (YWW) 

**==> picture [174 x 58] intentionally omitted <==**

**----- Start of picture text -----**<br>
XXXX<br>INTERNATIONAL F7101<br>ca c aik<br>RECTIFIERLOGO TE EE<br>**----- End of picture text -----**<br>


- P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) 

Y =  LAST DIGIT OF THE YEAR WW =  WEEK 

A =  ASSEMBLY SITE CODE 

LOT CODE 

PART NUMBER 

www.irf.com 

7 

## IRF7470PbF 

## **SO-8 Tape and Reel** 

Dimensions are shown in millimeters (inches) 

**==> picture [194 x 122] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>rir 7.9 ( .312 ) | FEED DIRECTION ah<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

**==> picture [231 x 87] intentionally omitted <==**

**----- Start of picture text -----**<br>
 330.00<br>(12.992)<br>  MAX.<br>| YO<br>14.40 ( .566 )<br>12.40 ( .488 )<br>NOTES :<br>1. CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>


2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 9.4mH RG = 25Ω, IAS = 8.0A. 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

When mounted on 1 inch square copper board,  t<10 sec 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 08/04 

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8 



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---

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