# Power MOSFET, N Channel, 40 V, 9 A, 0.017 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2577169RL/)

**URL**: https://novapart.co/products/IRF7469TRPBF/power-mosfet-n-channel-40-v-9-a-0017-ohm-soic
**SKU**: IRF7469TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2950
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Di

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 9A |
| Drain Source On State Resistance | 0.017ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2577169RL/)

PD- 93951A 

## **SMPS MOSFET** 

## IRF7469 

## HEXFET[®] Power MOSFET 

## **Applications** 

High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use 

High Frequency Buck  Converters for Computer Processor Power 

## **Benefits** 

Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage and Current 

|**VDSS**|**RDS(on) max(mΩ)**|**ID**|
|---|---|---|
|**40V**|**17@VGS = 10V**|**9.0A**|



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A<br>A<br>S 1 8 D<br>S 2 7 D<br>S 3 6 D<br>G 4 5 D<br>SO-8<br>Top View<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|**Symbol**<br>**Parameter**<br>**Max.**<br>**Units**<br>VDS<br>Drain-Source Voltage<br>40<br>V<br>ee<br>|<br>|||
|---|
|VGSGate-to-Source Voltage<br>± 20                                   V<br>ID@ TA= 25°C<br>Continuous Drain Current, VGS@ 10V<br>9.0<br>ID@ TA= 70°C<br>Continuous Drain Current, VGS@ 10V<br>7.3<br>A<br>IDM<br>Pulsed Drain Current<br>73<br>PD@TA= 25°C<br>Maximum Power Dissipation<br>2.5<br>W<br>PD@TA= 70°C<br>Maximum Power Dissipation<br>1.6<br>W<br>Linear DeratingFactor                                                                     0.02                              mW/°C<br>TJ, TSTG<br>Junction and Storage Temperature Range<br>-55  to + 150<br>°C<br>~~es~~<br>~~RRa~~<br>~~ae~~<br>~~ee~~<br>~~ee©~~<br>~~a~~<br>~~es ee~~|
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>**Thermal Resistance**<br>~~esrs~~|
|RθJL<br>Junction-to-Drain Lead<br>–––<br>20|
|RθJA<br>Junction-to-Ambient<br>–––<br>50<br>°C/W|



Notes hrough are on page 8 www.irf.com 

1 3/25/01 

## IRF7469 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Static @ TJ = 25°C (unless otherwise specified)**|**Static @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)**|
|---|---|---|
||V(BR)DSS<br>∆V(BR)DSS/∆TJ<br>VGS(th)<br>IGSS<br>IDSS<br>RDS(on)|**Parameter**<br>**Min.**<br>**Typ. Max.**<br>**Units**<br> **Conditions**<br>Drain-to-Source Breakdown Voltage<br>40<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250µA<br>JBreakdown Voltage Temp. Coefficient –––     0.04    –––     V/°C    Reference to 25°C, ID= 1mA<br>–––<br>12<br>17<br>VGS= 10V, ID= 9.0A<br>–––<br>15.5<br>21<br>VGS= 4.5V, ID= 7.2A<br>Gate Threshold Voltage<br>1.0<br>–––<br>3.0<br>V<br>VDS= VGS, ID= 250µA<br>–––<br>–––<br>20<br>µA<br>VDS= 32V, VGS= 0V<br>–––<br>–––<br>100<br>VDS= 32V, VGS= 0V, TJ= 125°C<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>200<br>VGS= 16V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-200<br>nA<br>VGS= -16V<br>Drain-to-Source Leakage Current<br>Static Drain-to-Source On-Resistance<br>mΩ<br>es<br>rd se<br>rs<br>~~re~~<br>~~rs~~<br>~~rs rs rsGs~~<br>~~ee~~<br>Pf<br>~~es~~<br>~~rs es rs~~<br>~~—~~<br>Ff<br>~~oo~~<br>~~a~~|
||**Dynamic @ T**|**Dynamic @ TJ = 25°C (unless otherwise specified)**|
||**Symbol**<br>gfs|**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br> **Conditions**<br>Forward Transconductance<br>17<br>–––<br>–––<br>S<br>VDS= 20V, ID= 7.2A<br>ee<br>~~ee ee~~|
|Qg<br>Qgs<br>Qgd<br>Qoss<br>td(on)<br>tr<br>td(off)<br>tf<br>Ciss<br>Coss<br>Crss<br>Rs<br>a<br>es<br>Re<br>~~a ~~<br>es||Total Gate Charge<br>–––<br>15      23                ID= 7.2A<br>Gate-to-Source Charge<br>–––<br>7.0<br>11<br>nC<br>VDS= 20V<br>Gate-to-Drain ("Miller") Charge<br>–––<br>5.0<br>8.0<br>VGS= 4.5V<br>Output Gate Charge<br>–––<br>16<br>24<br>VGS= 0V, VDS= 16V<br>Turn-On Delay Time<br>–––<br>11<br>–––<br>VDD= 20V<br>Rise Time<br>–––<br>2.2<br>–––<br>ID= 7.2A<br>Turn-Off Delay Time<br>–––<br>14<br>–––<br>RG= 1.8Ω<br>Fall Time<br>–––<br>3.5<br>–––<br>VGS= 4.5V<br>Input Capacitance<br>–––<br>2000<br>–––<br>VGS= 0V<br>Output Capacitance<br>–––<br>480<br>–––<br>VDS= 20V<br>Reverse Transfer Capacitance<br>–––<br>28<br>–––<br>pF<br>ƒ = 1.0MHz<br>ns<br>~~Re~~<br>~~ee~~<br>eeee<br>~~Re~~<br>@<br> ~~ee~~<br>es|



## **Avalanche Characteristics** 

|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>EAS<br>Single Pulse Avalanche Energy<br>–––<br>210<br>mJ<br>IAR<br>Avalanche Current<br>–––<br>7.2<br>A<br>oe<br>Re|
|---|



**Diode Characteristics** 

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Symbol Parameter Min. Typ. Max. Units Conditions<br>IS Continuous Source Current ––– ––– 2.3 MOSFET symbol D<br>(Body Diode) showing  the<br>A<br>ISM Pulsed Source Current ––– ––– 73 integral reverse G<br>fT (Body Diode)  p-n junction diode. S<br>VSD Diode Forward Voltage ––– 0.80 1.3 V TJ = 25°C, IS = 7.2A, VGS = 0V<br>SS | ––– TT 0.65 ––– TJ = 125°C, IS = 7.2A, VGS = 0V  @<br>trr Reverse Recovery Time ––– 47 71 ns TJ = 25°C, IF = 7.2A, VR=15V<br>ee Qrr es Reverse Recovery Charge ––– 91 140 nC di/dt = 100A/µs @<br>trr Reverse Recovery Time ––– 77 120 ns TJ = 125°C, IF = 7.2A, VR=20V<br>Qrr Reverse Recovery Charge ––– 150 230 nC di/dt = 100A/µs )<br>esooooo<br>2 www.irf.com<br>**----- End of picture text -----**<br>


IRF7469 

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**----- Start of picture text -----**<br>
 100 VGS a a  100 VGS<br>TOP 10V TOP 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>5.0V ict an 5.0V ct<br>4.5V 4.5V<br>4.0V 1/4 | 4.0V ey ACG ll<br>3.7V 3.7V<br>BOTTOM 3.5V BOTTOM 3.5V<br>1) N/A<br>a Hh WAT<br>HTT 3.5V _|<br>| Wy<br>3.5V<br> 10 YMe.f ul 20µs PULSE WIDTHT  = 25J °C  10 LI)i, Zan Rtnim 20µs PULSE WIDTHT  = 150J aail °C l<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 100 2.5<br>IDD = 9.0A<br>[os Pee LEELA LEELA<br>J} 7 2.0 PEELE EEE<br>T  = 150  CJ °<br>a r rCCEECECEECEE<br>1.5<br>Eiht<br>a 7 CPL<br>T  = 25  CJ ° 1.0 BAR IAEAD>=<A0RRNAIAI<br>Ca ra AT<br>Y err EEE EEE<br>TOLL EEEEEEEEE<br>0.5 SUREERREOUGHEERRREUUEE<br>V      = 25VDS<br> 10 20µs PULSE WIDTH 0.0 TL EELEL EEL EELEL EEL EEL LEE VGSGS = 10V<br>3.5 4.0 4.5 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°°<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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2.5<br>IDD = 9.0A<br>Pee LEELA LEELA<br>2.0 PEELE EEE<br>rCCEECECEECEE<br>1.5<br>Eiht<br>CPL<br>1.0<br>BAR IAEAD>=<A0RRNAIAI<br>AT<br>err EEE EEE<br>TOLL EEEEEEEEE<br>0.5 SUREERREOUGHEERRREUUEE<br>TL EELEL EEL EELEL EEL EEL LEE VGSGS = 10V<br>0.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction TemperatureJ (  C)°°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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## IRF7469 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = Cgs + Cgd,   Cds    SHORTED<br>== Crss    = Cgd<br>an: C  = C + C<br>10000 oss   ds  gd<br>FE E<br>rr ee Ciss Pee<br>1000<br>SS Coss<br>100<br>Pa sNTEay<br>Pp Crss SEH<br>10 ll<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

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 100<br>T  = 150  CJ °<br>i<br> 10<br>po re}<br>| T  = 25  CJ °<br> 1<br>ee<br>o e V      = 0 V GS<br>0.1 Pitt | fl cE<br>0.4 0.8 1.2 1.6 2.0<br>V     ,Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


- **Fig 7.** Typical Source-Drain Diode Forward Voltage 

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10<br>ID = 7.2A<br>VDS =  32V<br>VDS =  20V<br>8 Sp ee ER<br>Pi] tt Ly ae<br>y,<br>6 CTA<br>4<br>2 apDAREJ 4eeeeeeeee<br>Zee<br>0<br>0 5 10 15 20 25 30<br>Q   , Total Gate Charge (nC)G<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br> 1000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>|<br> 100<br>=<br>10us<br>iN<br>100us<br> 10<br>1ms<br> TA = 25  C° HE Se<br> TJ = 150  C° 10ms<br> 1 pf  Single Pulse LELS<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>**----- End of picture text -----**<br>


## **Fig 8.** Maximum Safe Operating Area 

www.irf.com 

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## IRF7469 

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10.0<br>RD<br>VDS<br>pif tt | tt tt |<br>8.0 VGS<br>PpPANEtt | RG D.U.T.<br>+<br>- [V] DD<br>6.0 PET EEE EE<br>PEt AAEENTE TTEE i 4.5V<br>Pulse Width ≤ 1 µs<br>4.0 Pett Duty Factor ≤ 0.1 %<br>Pitt EE EN<br>Fig 10a.   Switching Time Test Circuit<br>2.0 PE te t eee EENty TN ;<br>VDS<br>CEEEer ere 90% —<br>0.0 PE tT eT tet ty r<br>25 50 75 100 125 150 |<br>T   , Case TemperatureC (  C)° |<br>10% /\_\<br>VGS<br>td(on) tr td(off) tf<br>Fig 10b.   Switching Time Waveforms<br> 100<br>D = 0.50<br>A | ——— el<br> 10 P 0.20 eeE<br>0.10<br>0.05 [TI oo<br>0.02<br> 1<br>gn ne cl<br>0.01<br>PDM<br>t1<br>SINGLE PULSE<br>0.1 ee l (THERMAL RESPONSE) l t 2<br>Notes:<br>||| 1. Duty factor D = t   / t1 2<br>a ee 2. Peak T J = P DM x  Z thJA + TA<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 10.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

www.irf.com 

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## IRF7469 

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0.03<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
0.03<br>V = 4.5V<br>GS<br>a 0.02 0.02<br>ID = 9.0A<br>e es<br>V = 10V<br>GS<br>0.01 a a 0.01<br>0 20 40 60 80 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0<br>ID , Drain Current (A) VGS, Gate -to -Source Voltage  (V)<br>)<br>Ω<br>RDS (on) , Drain-to-Source On Resistance (<br>)<br>Ω<br>RDS(on) ,  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 12.** On-Resistance Vs. Drain Current 

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Current Regulator<br>Same Type as D.U.T.<br>QG<br>12V .2µF 50KΩ VGS<br>.3µF QGS QGD<br>cme D.U.T. +-VDS VG<br>VGS<br>3mA (ss | po Charge o<br>oe | —<br>IG ID<br>Current Sampling Resistors<br>—<br>Fig 13a&b.   Basic Gate Charge Test Circuit<br>and Waveform<br>15 V<br>V (B R )D S S<br>tp VD S L DRIVER<br>_.<br>R G D .U .T +<br>Wo. - [VD D]<br>IAS<br>20V<br>I A S / \ r it tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 13.** On-Resistance Vs. Gate Voltage 

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500<br>ID<br>TOP 3.2A<br>5.8A<br>400 eye BOTTOM 7.2A<br>P\ [TE]]<br>300 PIN Tt<br>GENE Eee<br>NEAT<br>200 fT<br>YaKo ft<br>100 ZaNNRUEEe<br>PASSE<br>0<br>PES<br>25 50 75 100 125 150<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14a&b.** Unclamped Inductive Test circuit and Waveforms 

6 

**Fig 14c.** Maximum Avalanche Energy Vs. Drain Current 

www.irf.com 

## IRF7469 

## **SO-8 Package Details** 

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      INC HES         M ILLIM E TER S<br>i - B  -D 5 a DIM a   M IN       M AX        M IN       M AX a<br>a A       .0532     .0688     1.35      1.75<br>A1     .0040     .0098     0.10      0.25<br>_ 8      7       6     5 ee<br>5 E H B       .014       .018       0.36      0.46<br>- A  -  0 .25  (.01 0)    M     A   M a C       .0075     .0098     0.19      0.25<br>CC 1     2      3      4 ee<br>L a D       .189       .196       4.80      4.98<br>— a E       .150       .157       3.81      3.99<br>CHL 6Xe θ K  x 4 5° fT e         .050 B ASIC         1.27 BA SIC<br>e1 e1       .025 B ASIC        0.635 BA SIC<br>=o, θ ae |<br>H       .2284     .2440      5.80     6.20<br>A<br>K       .011       .019       0.28      0.48<br>= - C  - imnina B   8 X nlaee A 1 0.1 0  (.0 04 ) LrTL.  L8X 6  C8 X |eeee L       0.16        .050       0.41     1.27 {| |<br>θ          0°          8°           0°         8°<br>0.2 5  (.010 )      M    C   A   S   B   S<br>[¢[ OT TF OO |_| R E C O M M E N D E D  F O O T P R IN T<br>N O T E S :<br>       1.  D IM E N S IO N IN G  A N D  T O LE R A N C IN G  P E R  A N S I Y 14 .5M -19 82 . 0.7 2 (.028  )<br>8X<br>       2.  C O N T R O LL IN G  D IM E N S IO N  : IN C H .<br>       3.  D IM E N S IO N S  A R E  S H O W N  IN  M IL LIM E T E R S  (IN C H E S ).<br>       4.  O U TL IN E  C O N F O R M S  TO  JE D E C  O U TL IN E  M S -01 2A A . he ;<br>           D IM E N S IO N  D O E S  N O T  IN C L U D E  M O L D  P R O TR U S IO N S5 6.46  ( .2 55  ) 1.78  (.0 70 )<br>iy che yt        8X<br>           M O LD  P R O T R U S IO N S  N O T  TO  E XC E E D  0.25  (.0 06 ).<br>           D IM E N S IO N S  IS  TH E  LE N G T H  O F  LE A D  F O R  S O LD E R IN G  T O  A  S U B S TR A TE ..6<br>1 .27 ( .05 0 ) noon,<br>        3 X<br>**----- End of picture text -----**<br>


## **SO-8 Part Marking** 

www.irf.com 

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## IRF7469 

## **SO-8 Tape and Reel** 

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TERM INAL NUM BER 1<br>oOo 6) fF<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) | FEED DIRECTIO N a<br>**----- End of picture text -----**<br>


N OTES : 

1.   CO NTRO LLING  DIM E NSIO N : M ILLIM ETER . 

2.   ALL DIM ENS ION S ARE SHO W N IN M ILL IM E TER S(INC HES). 3.   OU TL IN E CO N FO RM S  TO  EIA-481 & EIA-541. 

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 330.00<br>(12.992)<br>  M AX.<br>VAY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NO TES : 

1. CO NTRO LLING  DIM ENSIO N : M ILLIMETER. 

2. O UTLINE CO NFO RM S TO  EIA-481 & EIA-541. 

## **Notes:** 

Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 8.1mH RG = 25Ω, IAS = 7.2A. 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

When mounted on 1 inch square copper board. 

Data and specifications subject to change without notice. This product has been designed and qualified for the  Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 3/01 

www.irf.com 

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