# Power MOSFET, N Channel, 30 V, 11 A, 0.0125 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:1013432/)

**URL**: https://novapart.co/products/IRF7466PBF/power-mosfet-n-channel-30-v-11-a-00125-ohm-soic
**SKU**: IRF7466PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5610
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0125ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipa

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 11A |
| Drain Source On State Resistance | 0.0125ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1013432/)

## **SMPS MOSFET** 

## IRF7466PbF 

## **Applications** 

High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use . High Frequency Buck  Converters for Computer Processor Power Lead-Free 

## **Benefits** 

Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage and Current 

## HEXFET Power MOSFET 

**==> picture [200 x 161] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDSS RDS(on) max(m ID<br>poee [30V] 12.5@V ee GS = 10V 11A<br>A<br>A<br>S 1 8 D<br>S 2 7 D<br>S 3 6 D<br>G 4 5 D<br>SO-8<br>Top View<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

**Symbol Parameter Max. Units** ee ns DO VDS Drain-Source Voltage 30 V VGS                                     Gate-to-Source Voltage ± 20                                   V ~~Rs I (~~ ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 11 ~~nsGO~~ ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 9.0 A ~~ee————————~~ IDM Pulsed Drain Current 90 ~~ae ©~~ PD @TA = 25°C Maximum Power Dissipation 2.5 W ~~©~~ PD @TA = 70°C Maximum Power Dissipation 1.6 W Linear Derating Factor                                                                     0.02                              mW/°C ~~Re Rs~~ TJ , TSTG Junction and Storage Temperature Range ~~I (~~ -55  to + 150 °C 

**Thermal Resistance** 

**Symbol Parameter Typ. Max. Units** ~~eeen~~ RθJL Junction-to-Drain Lead ––– 20 RθJA Junction-to-Ambient ––– 50 °C/W ~~S~~ es ~~**e** ee n~~ ( ~~ne~~ 

> Notes ® hrough ® are on page 8 

www.irf.com 

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## IRF7466PbF 

**Static @ TJ = 25°C (unless otherwise specified)** 

||a|a|errs|tr|rs|rs|||||
|---|---|---|---|---|---|---|---|---|---|---|
||**Parameter**<br>Pes<br>a||**Min.**<br>Pes<br>errs|**Typ. **<br>Pes<br>tr|**Max.**<br>Pes<br>rs||**Units**<br>Pes|**Conditions**<br>Pes|||
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>a||30<br>errs|–––<br>tr<br>GO|–––<br>rs<br>GO||V<br>GO|VGS= 0V, ID= 250µA|||
|∆V(BR)DSS/∆TJ|JBreakdown Voltage Temp. Coefficient –––     0.028    –––     V/°C    Reference to 25°C, I<br>~~QO~~||–––     0.028    –––     V/°C    Reference to 25°C, I<br>~~QO~~|–––     0.028    –––     V/°C    Reference to 25°C, I<br>~~QO~~|–––     0.028    –––     V/°C    Reference to 25°C, I<br>~~QO~~||–––     0.028    –––     V/°C    Reference to 25°C, I<br>~~QO~~|–––     0.028    –––     V/°C    Reference to 25°C, ID= 1mA<br>~~QO~~|||
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~A~~||–––<br>~~Pf~~|9.8<br>~~Pf~~|12.5<br>~~Pf~~||mΩ<br>~~Pf~~|VGS= 10V, ID= 11A|||
||||–––<br>~~Pf~~|13<br>~~Pf~~|17<br>~~Pf~~|||VGS= 4.5V, ID= 8.8A|||
|VGS(th)|Gate Threshold Voltage<br>~~GO~~||1.0<br>~~GO~~|–––<br>~~GO~~|3.0<br>~~GO~~||V<br>~~GO~~|VDS= VGS, ID= 250µA<br>~~GO~~|||
|IDSS|Drain-to-Source Leakage Current<br>~~ee~~<br>~~|~~||–––<br>~~ee~~<br>~~|~~|–––<br>~~ee~~<br>|20<br>~~ee~~<br>||µA<br>~~ee~~<br>tT|VDS= 24V, VGS= 0V<br>VDS= 24V, VGS= 0V, TJ= 125°C<br>~~ee~~|||
||||–––<br>~~ee~~<br>~~|~~tT|–––<br>~~ee~~<br>tT|100<br>~~ee~~<br>tT||||||
|IGSS|Gate-to-Source Forward Leakage<br>~~|~~<br>~~a~~||–––<br>~~|~~<br>~~a~~<br>a|–––<br><br>~~a~~<br>ee|200<br><br>~~a~~<br>ee||nA<br><br>~~a~~<br>ee|VGS= 16V<br>~~a~~|||
||Gate-to-Source Reverse Leakage<br>~~a~~||–––<br>~~a~~<br>a|–––<br>~~a~~<br>ee|-200<br>~~a~~<br>ee|||VGS= -16V<br>~~a~~|||
|**Dynamic @ TJ = 25°C (unless otherwise specified)**<br>a ee<br>eeee|||||||||||
|**Symbol**|**Parameter**<br>ee||**Min.**<br>ee<br>ee|**Typ. **<br>ee<br>ee|**Max. **<br>ee||**Units**<br>ee|**Conditions**|||
|gfs|Forward Transconductance<br>es||22<br>ee <br>es|–––<br> ee<br>es|–––<br>es||S<br>es|VDS= 15V, ID= 8.8A|||
|Qg<br>es|Total Gate Charge<br>~~a~~<br>~~Re~~<br>||–––<br>~~a~~<br>es<br>|16      23                I<br>~~a~~<br>|16      23                I<br>~~a~~<br>||16      23                I<br>nC|16      23                ID= 8.8A<br>VDS= 15V<br>VGS= 4.5V<br>©)|||
|Qgs<br>es|Gate-to-Source Charge<br>~~ee~~<br>~~Re~~<br>||–––<br>~~ee~~<br>es<br>|7.4<br>~~ee~~<br>|11<br>~~ee~~<br>||||||
|Qgd<br>es|Gate-to-Drain ("Miller") Charge<br>~~Re~~<br>||–––<br>es<br>|5.3<br>|8.0<br>||||||
|gd<br>Qoss<br>es<br>es|Output Gate Charge<br>~~Re~~<br>~~a~~||–––<br>es<br>~~a~~|19<br>~~a~~|29<br>~~a~~|||VGS= 0V, VDS= 15V<br>©)|||
|td(on)<br>es<br>es<br>ee|Turn-On Delay Time<br>~~Re~~<br>~~a~~<br>ee||–––<br>es<br>~~a~~<br>ee|10<br>~~a~~<br>ee|–––<br>~~a~~<br>ee||ns|VDD= 15V<br>ID= 8.8A<br>RG= 1.8Ω<br>VGS= 4.5V<br>©)|||
|d(on)<br>tr<br><br>es<br>ee|Rise Time<br>~~a~~<br>ee||–––<br>~~a~~<br>ee|2.8<br>~~a~~<br>ee|–––<br>~~a~~<br>ee||||||
|td(off)<br>ee<br>aee|Turn-Off Delay Time<br>ee<br>ee||–––<br>ee<br>ee|13<br>ee<br>ee|–––<br>ee<br>ee||||||
|tf<br>aee<br>~~eo~~|Fall Time<br>ee<br>~~eo~~||–––<br>ee<br>~~eo~~|3.6<br>ee<br>~~eo~~|–––<br>ee<br>~~eo~~||||||
|Ciss<br>~~eo~~<br>~~es~~|Input Capacitance<br>~~eo~~<br>~~ee~~||–––<br>~~eo~~<br>~~ee~~|2100<br>~~eo~~<br>~~ee~~|–––<br>~~eo~~<br>~~ee~~||pF|VGS= 0V<br>VDS= 15V<br>ƒ = 1.0MHz|||
|Coss<br>~~es~~|Output Capacitance<br>~~ee~~||–––<br>~~ee~~|710<br>~~ee~~|–––<br>~~ee~~||||||
|Crss<br>~~es~~|Reverse Transfer Capacitance<br>~~ee~~||–––<br>~~ee~~|52<br>~~ee~~|–––<br>~~ee~~||||||
|**Avalanche Characteristics**<br>—————————————|||||||||||
|**Symbol**<br>—————————————<br>es||**Parameter**<br>—————————————||||**Typ.**<br>—————————————|||**Max.**<br>—————————————|**Units**<br>—————————————|
|EAS<br>—————————————<br>es||Single Pulse Avalanche Energy<br>—————————————||||–––<br>—————————————|||230<br>—————————————|mJ<br>—————————————|
|IAR<br>—————————————<br>es||Avalanche Current<br>—————————————||||–––<br>—————————————|||8.8<br>—————————————|A<br>—————————————|
|**Diode Characteristics**<br>—————————————<br>~~ne~~<br>~~ee~~|||||||||||
|**Symbol**<br>~~ne~~<br>~~SSS~~|**Parameter**<br>~~ee~~<br>~~SSS~~||**Min.**<br>~~ee~~<br>~~SSS~~|**Typ. **<br>~~ee~~<br>~~SSS~~|**Max. **<br>~~ee~~<br>~~SSS~~||**Units**<br>~~SSS~~|**Conditions**<br>i|||
|IS<br>~~ne~~<br>~~SSS~~|Continuous Source Current<br>(Body Diode)<br>~~ee~~<br>~~SSS~~||–––<br>~~ee~~<br>~~SSS~~|–––<br>~~ee~~<br>~~SSS~~|2.3<br>~~ee~~<br>~~SSS~~||~~SSS~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>S<br>D<br>G<br>i|||
|ISM<br>~~ne~~<br>~~SSS~~|Pulsed Source Current<br>(Body Diode)<br>~~ee~~<br>~~SSS~~||–––<br>~~ee~~<br>~~SSS~~|–––<br>~~ee~~<br>~~SSS~~|90<br>~~ee~~<br>~~SSS~~||||||
|VSD<br>~~SSS~~<br>~~EE~~|Diode Forward Voltage<br>~~SSS~~<br>~~EE~~<br>|||–––<br>~~SSS~~<br>~~EE~~<br>||0.8<br>~~SSS~~<br>~~EE~~|1.3<br>~~SSS~~<br>~~EE~~||V<br>~~SSS~~<br>~~EE~~|TJ= 25°C, IS= 8.8A, VGS= 0V<br>i<br>~~EE~~<br>@|||
||||–––<br>~~EE~~<br>||0.66<br>~~EE~~|–––<br>~~EE~~|||TJ= 125°C, IS= 8.8A, VGS= 0V<br>~~EE~~<br>@|||
|trr<br>ee<br>es|Reverse Recovery Time<br>|<br>ee<br>es||–––<br>|<br>ee|42<br>ee|63<br>ee||ns<br>ee|TJ= 25°C, IF= 8.8A, VR=15V<br>di/dt = 100A/µs<br>@<br>©|||
|Qrr<br>ee<br>es|Reverse Recovery Charge<br>ee<br>es||–––<br>ee|59<br>ee|89<br>ee||nC<br>ee||||
|trr<br>es<br>ee<br>es|Reverse Recovery Time<br>es<br>ee||–––<br>ee|42<br>ee|63<br>ee||ns<br>ee|TJ= 125°C, IF= 8.8A, VR=15V<br>di/dt = 100A/µs<br>©<br>ee<br>@|||
|Qrr<br>ee<br>es|Reverse Recovery Charge<br>ee||–––<br>ee|61<br>ee|92<br>ee||nC<br>ee||||



**Dynamic @ TJ = 25°C (unless otherwise specified)** 

## **Avalanche Characteristics** 

## **Diode Characteristics** 

## IRF7466PbF 

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**----- Start of picture text -----**<br>
 1000<br>VGS<br>TOP 10V<br>5.0V4.5V Hef py<br>4.0V<br> 100 3.5V3.3V 1<br>3.0V<br>BOTTOM 2.7V<br> 10 A r<br>fl ee<br> 1<br>0 |<br>2.7V<br>0.1<br>er<br>20µs PULSE WIDTH<br>orn ee T  = 25J °C<br>0.01 en<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


## **Fig 1.** Typical Output Characteristics 

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**----- Start of picture text -----**<br>
 100<br>a eeee ee<br>T  = 150  CJ °<br> 10<br>LL<br>2 2<br>ae Pe T  = 25  CJ ° ee ee<br>7 4<br> 1 PIA |<br>=2=====———|SS A eS<br>V      = 15VDS<br>20µs PULSE WIDTH<br>0.1 PCREEr<br>2.5 3.0 3.5 4.0 4.5 5.0<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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**----- Start of picture text -----**<br>
 1000<br>VGS<br>TOP 10V<br>5.0V4.5V ete<br>4.0V<br>3.5V<br>3.3V ioT<br>3.0V i<br>BOTTOM 2.7V<br> 100<br>n estses eer<br>—<br>oo<br> 10<br>2.7V<br>aarti gaat eeatit<br>20µs PULSE WIDTH<br>T  = 150J °C<br> 1 Z t<br>7<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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**----- Start of picture text -----**<br>
2.0<br>ID = 11A<br>P ELE<br>1.5 pal<br>Pa<br>1.0 LY LT |<br>LETTE<br>aaa<br>0.5 PELLET<br>EE<br>PEELE EEE<br>VGS = 10V<br>0.0 EE L<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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## IRF7466PbF 

**==> picture [437 x 471] intentionally omitted <==**

**----- Start of picture text -----**<br>
100000 VGS   = 0V,       f = 1 MHZ 10 ID = 8.8A VDS = 24V<br>Ciss    = Cgs + Cgd,   Cds    SHORTED VDS = 15V<br>= =e Crss    = Cgd  8 Ce, PAPER SS e<br>C  = C + C<br>10000 | | oss   ds  gd<br>(a es Oe Oe es eG OO<br>—— ae Ciss eel 6 V2<br>1000 Coss<br>SS S A<br>4<br>PSR<br>100<br>Crss = FY 2<br>PT EE /<br>10 VetPL<br>0<br>1 10 100 0 5 10 15 20 25 30<br>VDS, Drain-to-Source Voltage (V) Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100  1000<br>OPERATION IN THIS AREA LIMITED<br>BY R<br>eo _ y DS(on) aul<br>T  = 150  CJJ °<br> 10  100<br>any /aeeeeeAA /aeeeeeAAAA | | {| | | aTN | ENC| | 10us<br>100us<br> 1 | | ff f_ [| T  = 25  CJJ | ° | | fT 7 |  10 ATT. SUT ATT<br>i ee e P l 1ms<br> T TAJ = 25  C= 150  C° ° 10ms<br>0.1 | 2 if tet fT | tT | V      = 0 V  hh GS  1 p  Single Pulse p 1a NS<br>0.2 0.6 1.0 1.4 1.8 2.2 0.1  1  10  100<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SDSD<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
 100<br>eo<br>T  = 150  CJJ °<br> 10<br>any /aeeeeeAA /aeeeeeAAAA | | {| | |<br>| | ff f_ [| T  = 25  CJJ | ° | | fT 7 |<br> 1<br>i ee e<br>| 2 if tet fT | tT | V      = 0 V  hh GS<br>0.1<br>0.2 0.6 1.0 1.4 1.8 2.2<br>V     ,Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SDSD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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## **Fig 6.** On-Resistance Vs. Drain Current 

## IRF7466PbF 

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**----- Start of picture text -----**<br>
12<br>a vec BR<br>10 PiPATAYEEE EETE ETTL Ves Dut.<br>8 ata Re | - J<br>Ea NEeee pp<br>6 Pt tT tT tT | NEL )} 4.5V<br>≤ 1<br>≤ 0.1 %<br>4<br>Pt IN Fig 10a.   Switching Time Test Circuit x<br>2 Ptttt| | rT dErEtt rtT dtrEA<br>VDS<br>0 |Ft | | | cdTcdELdT TE 90% \—<br>25 50 75 100 125 150<br>T   , Case TemperatureC (  C)°<br>10% /\ X<br>VGS \<br>td(on) tr td(off) tf<br>Fig 10b.   Switching Time Waveforms<br> 100<br>D = 0.50<br>eestorA L ——iilee|<br> 10 0.20<br>0.10<br>0.05 nn a<br>0.02<br> 1 a eensec|<br>0.01<br>e a nee ee ee | PDM<br>cs ee ee t1<br>SINGLE PULSE<br>0.1 C rsn (THERMAL RESPONSE) T t2<br>Notes:<br>ee ni 1. Duty factor D = t   / t1 2<br>a 2. Peak T J = P DM x  Z thJA + TA<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 10.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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## IRF7466PbF 

**==> picture [211 x 199] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.06<br>0.04<br>0.02<br>VGS = 4.5V<br>V = 10V<br>GS<br>0.00<br>0 20 40 60 80 100<br>ID , Drain Current (A)<br>)<br>Ω<br>RDS (on) , Drain-to-Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 12.** On-Resistance Vs. Drain Current 

**==> picture [213 x 240] intentionally omitted <==**

**----- Start of picture text -----**<br>
Current Regulator<br>Same Type as D.U.T.<br>QG<br>50KΩ<br>12V .2µF<br>.3µF QGS QGD<br>D.U.T. +-VDS VG<br>VGS<br>3mA (a Charge<br>moef IG ID | |<br>Current Sampling Resistors<br>Fig 13a&b.   Basic Gate Charge Test Circuit<br>and Waveform<br>15V<br>V(BR)DSS<br>tp VDS L DRIVER<br>><br>R G D.U.T +<br>/ IAS - [V][DD]<br>20V<br>I AS | r dt tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 14a&b.** Unclamped Inductive Test circuit and Waveforms 

6 

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**----- Start of picture text -----**<br>
0.025<br>0.020<br>0.015 ID = 11A<br>0.010<br>0.005<br>0.000<br>3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0<br>VGS, Gate -to -Source Voltage  (V)<br>Fig 13.    On-Resistance Vs. Gate Voltage<br>600<br>ID<br>TOP 3.9A<br>500 PT tt 7.0A<br>neWn e BOTTOM 8.8A<br>400 PN Et<br>ENE eee<br>PPR<br>300<br>KRU [IX] Et<br>200<br>BAND Ne<br>100<br>aan SeNEee<br>0<br>FT | |<br>25 50 75 100 125 150<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>)<br>Ω<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 14c.** Maximum Avalanche Energy Vs. Drain Current 

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## IRF7466PbF 

## **SO-8 Package Outline** 

Dimensions are shown in millimeters (inches) 

**==> picture [373 x 336] intentionally omitted <==**

**----- Start of picture text -----**<br>
INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>b .013 .020 0.33 0.51<br>Heo 8 7 AE 6 5 en c ee .0075 .0098 0.19 0.25<br>a 6 — H ee—= D .189 .1968 4.80 5.00<br>E<br>1 2 3 4 0.25 [.010]  A a E .1497 a .1574 3.80 4.00<br>e .050  BASIC 1.27  BASIC<br>e1 .025  BASIC 0.635  BASIC<br>Ta e  a [J<br>_| i H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e<br>cH == L .016 .050 0.40 1.27<br>A y  0°  8°  0°  8°<br>e1 K x 45°<br>A<br>C<br>y<br>0.10 [.004]<br>an 8X b v A1 o X S L 8X L 8X c of<br>0.25 [.010]  C A B 7<br>és. OTT<br>FOOTPRINT<br>NOTES:<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>Toa<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>i rT<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>6.46 [.255]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>     A SUBSTRATE.<br>| M0002<br>3X 1.27 [.050] ee<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## **SO-8 Part Marking** 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

DATE CODE (YWW) 

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**----- Start of picture text -----**<br>
XXXX<br>INTERNATIONAL F7101<br>a u l<br>RECTIFIERLOGO TPee<br>**----- End of picture text -----**<br>


- P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) 

- Y =  LAST DIGIT OF THE YEAR WW =  WEEK 

- A =  ASSEMBLY SITE CODE 

LOT CODE 

PART NUMBER 

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## IRF7466PbF 

## **SO-8 Tape and Reel** 

Dimensions are shown in millimeters (inches) 

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TERMINAL NUMBER 1<br>oOO 0) fF<br>12.3 ( .484 )<br>11.7 ( .461 )<br>|<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br> 330.00<br>g (12.992)  MAX. \/<br>PY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


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1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 5.9mH RG = 25Ω, IAS = 8.8A. 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

When mounted on 1 inch square copper board,  t<10 sec 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 08/04 

www.irf.com 

8 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF7466PBF/power-mosfet-n-channel-30-v-11-a-00125-ohm-soic)
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- [Supplier page](https://es.farnell.com/infineon/irf7466pbf/mosfet-n-logic-so-8/dp/1013432)
---

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