# Power MOSFET, N Channel, 150 V, 1.9 A, 0.28 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2777385RL/)

**URL**: https://novapart.co/products/IRF7465TRPBF/power-mosfet-n-channel-150-v-19-a-028-ohm-soic
**SKU**: IRF7465TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1630
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Pow

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1.9A |
| Drain Source On State Resistance | 0.28ohm |
| Gate Source Threshold Voltage Max | 5.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2777385RL/)

## PD-95274 IRF7465PbF 

## **SMPS MOSFET** 

HEXFET Power MOSFET 

## **Applications** 

High frequency DC-DC converters Lead-Free 

|**VDSS**|**RDS(on) max**|**ID**|
|---|---|---|
|**150V**|**0.28**<br>**@VGS = 10V**|**1.9A**|



## **Benefits** 

Low Gate to Drain Charge to Reduce Switching Losses ° Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) 

> e Fully Characterized Avalanche Voltage and Current 

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|~~SS~~|**Parameter**<br>~~C~~|**Max.**|**Units**|
|---|---|---|---|
|ID@ TA= 25°C<br>~~SS~~<br>~~a~~|Continuous Drain Current, VGS@ 10V<br>~~C~~<br>|1.9<br>|A|
|ID@ TA= 70°C<br>~~es~~|Continuous Drain Current, VGS@ 10V<br>~~es~~|1.5<br>~~es~~||
|IDM|Pulsed Drain Current|15||
|PD@TA= 25°C<br>~~a~~|Power Dissipation<br>~~a~~|2.5<br>~~a~~|W<br>~~a~~|
|~~a~~|Linear DeratingFactor<br>~~a~~|0.02<br>~~a~~|W/°C<br>~~a~~|
|VGS<br>~~ee~~|Gate-to-Source Voltage<br>~~ee~~|± 30<br>~~ee~~|V<br>~~ee~~|
|dv/dt<br>~~ee~~<br>~~EE~~|Peak Diode Recoverydv/dt<br>~~ee~~<br>~~EE~~|7.8<br>~~ee~~<br>~~eee~~|V/ns<br>~~ee~~<br>~~eee~~|
|TJ<br>TSTG<br>~~EE~~|Operating Junction and<br>Storage Temperature Range<br>~~EE~~|-55  to + 150<br>~~eee~~|°C<br>~~eee~~|
|~~EE~~|Soldering Temperature, for 10 seconds<br>~~EE~~|300 (1.6mm from case )<br>~~eee~~||



|**Thermal Resistance**|
|---|
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RθJL<br>Junction-to-Drain Lead<br>–––<br>20<br>RθJA<br>Junction-to-Ambient<br>–––<br>50<br>°C/W<br>~~eees~~<br>~~es~~<br>~~ee~~<br>~~ee ee~~ ee|
|Notes<br>hrough<br>are on page 8<br>®<br>©|
|www.irf.com<br>1|
|09/21/04|



## IRF7465PbF 

**Static @ TJ = 25°C (unless otherwise specified)** 

|||~~ee~~|~~ee~~||||
|---|---|---|---|---|---|---|
||**Parameter**<br>es|**Min.**<br>es<br>~~ee~~|**Typ. **<br>es<br>~~ee~~|**Max. **<br>es|**Units**<br>es|**Conditions**|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~es~~<br>~~es~~|150<br>~~ee ~~<br>~~es~~|–––<br> ~~ee~~<br>~~es~~|–––<br>~~es~~|V<br>~~es~~|VGS= 0V, ID= 250µA<br>~~@~~|
|∆V(BR)DSS/∆TJ|JBreakdown Voltage Temp. Coefficient –––     0.19    –––     V/°C    Reference to 25°C, I<br>~~es~~<br>~~es~~|–––     0.19    –––     V/°C    Reference to 25°C, I|–––     0.19    –––     V/°C    Reference to 25°C, I|–––     0.19    –––     V/°C    Reference to 25°C, I|–––     0.19    –––     V/°C    Reference to 25°C, I|–––     0.19    –––     V/°C    Reference to 25°C, ID= 1mA<br>~~@~~<br>~~@~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~es~~<br>~~es~~|–––|–––|0.28|Ω|VGS= 10V, ID= 1.14A<br>~~@~~<br>~~@~~|
|VGS(th)|Gate Threshold Voltage<br>~~es~~<br>~~ee~~<br>~~ee eee~~|3.0<br>~~ee~~<br>~~eee~~|–––<br>~~ee~~<br>~~eee~~|5.5<br>~~ee~~<br>~~eee~~|V<br>~~ee~~<br>~~eee~~|VDS= VGS, ID= 250µA<br>~~@~~|
|IDSS|Drain-to-Source Leakage Current<br>~~ee eee~~<br>~~|~~TT<br>||–––<br>~~eee~~<br>~~|~~|–––<br>~~eee~~<br>|25<br>~~eee~~<br>|µA<br>~~eee~~<br>TT<br>|VDS= 150V, VGS= 0V|
|||–––<br>~~eee~~<br>~~|~~TT<br>||–––<br>~~eee~~<br>TT<br>|250<br>~~eee~~<br>TT<br>||VDS= 120V, VGS= 0V, TJ= 125°C|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee eee~~<br>~~|~~<br>|~~tT~~|–––<br>~~eee~~<br>~~|~~<br>|~~tT~~|–––<br>~~eee~~<br><br>~~tT~~|100<br>~~eee~~<br><br>~~tT~~|nA<br>~~eee~~<br><br>~~tT~~|VGS= 30V|
||Gate-to-Source Reverse Leakage<br>|~~tT~~|–––<br>|~~tT~~|–––<br>~~tT~~|-100<br>~~tT~~||VGS= -30V|



**Dynamic @ TJ = 25°C (unless otherwise specified)** 

||||~~ee~~||||||||
|---|---|---|---|---|---|---|---|---|---|---|
||**Parameter**<br>ee||**Min.**<br>ee<br>~~ee~~<br>~~es~~|**Typ. **<br>ee|**Max. **<br>ee||**Units**<br>ee|**Conditions**|||
|gfs|Forward Transconductance<br>~~ee~~||0.75<br>~~ee~~<br>~~ee~~<br>~~es~~|–––<br>~~ee~~|–––<br>~~ee~~||S<br>~~ee~~|VDS= 50V, ID= 1.14A|||
|Qg|Total Gate Charge<br>~~a~~||–––<br>~~es~~<br>~~a~~<br>es|10<br>~~a~~|15                 I<br>~~a~~||15                 I<br>nC|15                 ID= 1.14A<br>VDS= 120V<br>VGS= 10V|||
|Qgs<br>~~a~~<br>~~es~~|Gate-to-Source Charge<br>~~ee~~<br>~~a~~||–––<br>~~ee~~<br>es<br>es|2.7<br>~~ee~~|4.0<br>~~ee~~||||||
|Qgd<br>~~a~~<br>~~es~~|Gate-to-Drain("Miller")Charge<br>~~ee~~<br>~~a~~||–––<br>es<br>~~ee~~<br>es|5.0<br>~~ee~~|7.5<br>~~ee~~||||||
|td(on)<br>~~a~~<br>~~es~~|Turn-On Delay Time<br>~~a~~||–––<br>es|7.0|–––||ns|VDD= 75V<br>ID= 1.14A<br>RG= 6.0Ω<br>VGS= 10V<br>°|||
|tr<br>~~a~~<br>~~es~~<br>ee|Rise Time<br>~~a~~<br>~~ee~~||–––<br>es<br>~~ee~~|1.2<br>~~ee~~|–––<br>~~ee~~||||||
|td(off)<br>~~a~~<br>~~es~~<br>ee<br>~~oe~~|Turn-Off Delay Time<br>~~a~~<br>~~ee~~<br>~~oe~~||–––<br>es<br>~~ee~~<br>~~oe~~|10<br>~~ee~~|–––<br>~~ee~~||||||
|tf<br>ee<br>~~oe~~|Fall Time<br>~~ee~~<br>~~oe~~||–––<br>~~ee~~<br>~~oe~~|9.0<br>~~ee~~|–––<br>~~ee~~||||||
|Ciss<br>~~oe~~<br>~~Ps~~|Input Capacitance<br>~~oe~~<br>~~a~~||–––<br>~~oe~~<br>~~a~~|330<br>~~a~~|–––<br>~~a~~||pF|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz<br>°|||
|Coss<br>~~oe~~<br>~~Ps~~<br>es|Output Capacitance<br>~~oe~~<br>~~a~~<br>~~ee~~||–––<br>~~oe~~<br>~~a~~<br>~~ee~~|80<br>~~a~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~||||||
|Crss<br>~~Ps~~<br>es<br>Rs|Reverse Transfer Capacitance<br>~~a~~<br>~~ee~~||–––<br>~~a~~<br>~~ee~~|16<br>~~a~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~||||||
|Coss<br>es<br>Rs<br>Rs|Output Capacitance<br>~~ee~~||–––<br>~~ee~~|420<br>~~ee~~|–––<br>~~ee~~|||VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz|||
|Coss<br>Rs<br>Rs|Output Capacitance||–––|41|–––|||VGS= 0V,  VDS= 120V,  ƒ = 1.0MHz|||
|Cosseff.<br>Rs|Effective Output Capacitance||–––|76|–––|||VGS= 0V, VDS= 0V to 120V<br>®|||
|**Avalanche Characteristics**<br>ee|||||||||||
|ee<br>es||**Parameter**||||**Typ.**|||**Max.**|**Units**|
|EAS<br>ee<br>es||Single Pulse Avalanche Energy||||–––|||40|mJ|
|IAR<br>es<br>Of||Avalanche Current<br>Of||||–––<br>Of|||1.9<br>Of|A<br>Of|



## **Avalanche Characteristics** 

|**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>EAS<br>Single Pulse Avalanche Energy<br>–––<br>40<br>mJ<br>IAR<br>Avalanche Current<br>–––<br>1.9<br>A<br>ee<br>es<br>Of|
|---|



**Diode Characteristics** 

|~~>~~|**Parameter**<br>~~>~~|**Min. **<br>~~>~~|**Typ. **<br>~~>~~|**Max.**<br>~~>~~|**Units**<br>~~>~~|**Conditions**|
|---|---|---|---|---|---|---|
|IS<br>~~>~~|Continuous Source Current<br>(Body Diode)<br>~~>~~|–––<br>~~>~~|–––<br>~~>~~|2.3<br>~~>~~|~~>~~|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.|
|ISM|Pulsed Source Current<br>(BodyDiode)|–––|–––|15|||
|VSD<br>~~ee~~|Diode Forward Voltage<br>~~ee~~|–––|–––|1.3|V|TJ= 25°C, IS= 1.14A, VGS= 0V<br>~~°~~|
|trr<br>~~ee~~<br>ee|Reverse Recovery Time<br>~~ee~~<br>~~es~~|–––<br>~~es~~|62<br>~~es~~|93<br>~~es~~|ns<br>~~es~~|TJ= 25°C, IF= 1.14A<br>di/dt = 100A/µs<br>~~°~~<br>@|
|Qrr<br>ee|Reverse RecoveryCharge<br>~~es~~|–––<br>~~es~~|160<br>~~es~~|240<br>~~es~~|nC<br>~~es~~||



## IRF7465PbF 

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100 100<br>VGS VGS<br>TOP            15V TOP            15V<br>                    12V                     12V<br>                    10V                     10V<br>                   8.0V                    8.0V<br>                   7.5V eat em                    7.5V el<br>                   7.0V                   7.0V<br>10                   6.5V er I 10                    6.5V a amnlilll<br>BOTTOM  6.0V | fT BOTTOM  6.0V Sroct eet!<br>6.0V<br>amy’ comm Sa)! a l<br>1 1<br>6.0V<br>20µs PULSE WIDTH<br>20µs PULSE WIDTH<br>Tj = 150°C<br>Tj = 25°C<br>0.1 Oiwaza nee | 0.1 JrT Ee ETTil<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 100 2.5<br>ID = 1.9A<br>== Po EET<br>a ELE ELLE EEL<br>a 2.0 4<br> 10 rT] T  = 150  CJ ° TP HEEL<br>1.5<br>a SSS an<br>T  = 25  CJ ° 1.0<br> 1 AVA T. |Ppt| | | ELLE AALEAL EEL<br>———————— HT<br>0.5<br>a TTLLL ELL<br>V      = 25VDS<br>S P 20µs PULSE WIDTH Et e VGS = 10V<br>0.1 0.0<br>6.0 7.0 8.0 9.0 10.0 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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## IRF7465PbF 

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10000 20<br>VGS   = 0V,       f = 1 MHZ ID = 1.14A<br>CCiss    = C  = Cgs + Cgd,   Cds    SHORTED VDS = 120V<br>rss   gd  16 VDS = 75V<br>1000 ArH Coss   = Cds + Cgd | | | VDS = 30V | | |<br>gp | | ft Sry |_|<br>Ciss<br>im 251] en SSL Tl 12 a 7<br>Coss<br>100<br>S T anny//Ane<br>Crss 8<br>a A eel<br>10<br>TS S) | I<br>4<br>1 aeAN eeA ee 0 Vit tf<br>1 10 100 1000 0 4 8 12 16<br>Q   , Total Gate Charge (nC)G<br>VDS, Drain-to-Source Voltage (V)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

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 100<br>a ee ee ee<br> 10<br>| i<br>T  = 150  CJ °<br>T  = 25  CJ °<br>ff |<br> 1<br>fA ft<br>a<br>a A ee) ee ee<br>V      = 0 V GS<br>0.1<br>PAR ay oe<br>0.4 0.6 0.8 1.0<br>V     ,Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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100<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>rT ME all<br>10<br>ezin tines |e<br>100µsec<br>Pes S R<br>1 C OIS ul<br>1msec<br>TA = 25°C re<br>TJ = 150°C 1 10msec i<br>Single Pulse<br>0.1 oo at<br>1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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## IRF7465PbF 

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2.01.5 PLSAE [RAK] PtE E E EL Ves Vos D.U.T.RRr<br>-<br>aaa ns<br>1.0 Pi tet INNEE 5 tov °<br>≤ 1<br>≤ 0.1 %<br>PEL LEE NI sence<br>0.5 PE tet LING\ Fig 10a.   Switching Time Test Circuit Duty Factor<br>TTT VDS<br>90%<br>0.0 Pi TE EE EEL LA f__\<br>25 50 75 100 125 150<br>T   , Case TemperatureC (  C)°<br>10% / \ AmK<br>Fig 9.   Maximum Drain Current Vs. VGS f\« le >|\ pl< ><br>Ambient Temperature td(on) tr td(off) tf<br>Fig 10b.   Switching Time Waveforms<br> 100<br>eee es ee ee es ees nt eee EEE el<br>D = 0.50<br>p ac e ler|<br>Ls<br> 10 r 0.20 e<br>r 0.10 eer sp a<br>0.05<br>= 0.02 scomeeeerrr TE PDM<br> 1 r a 0.01 sai ee aag? Ell |ET| dd EI t1<br>B e t2<br>|__| | er 7 SINGLE PULSE a ee Notes:<br>(THERMAL RESPONSE) 1. Duty factor D = t   / t1 2<br>pe TT eLe 2. Peak TJ= P DM x  Z thJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1  1  10<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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## IRF7465PbF 

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0.40 0.50<br>T OLL<br>A EE<br>0.45<br>0.36 ; P ITT<br>0.40<br>B RA A EE<br>0.32 : P IT<br>VGS = 10V 0.35<br>0.28 S E Ene Yvan PA E ID = 1.14A E EEC<br>0.30<br>pz Eeee<br>| Ebr | | aeeee ee ee<br>0.24 4 INSEE EE<br>0.25<br>0.20 P TC) 0.20 o ESPSSEEEESe<br>0 4 8 12 16 6 8 10 12 14 16<br>ID , Drain Current (A) VGS, Gate -to -Source Voltage  (V)<br>Fig 12.    On-Resistance Vs. Drain Current Fig 13.    On-Resistance Vs. Gate Voltage<br>Current Regulator<br>Same Type as D.U.T.<br>QGG<br>50KΩΩ<br>12V .2µFµFF<br>.3µFµFF QGSGS QGDGD<br>Tr D.U.T. | +-VDS-VDSVDSDS VGG w4 100 ID<br>VGSGS TOP 0.8A<br>3mA fi Charge 80 Fi | | fl BOTTOM 1.5A 1.9A<br>oma IGG IDD | KEE<br>Current nme Sampling Resistors PXEf<br>60 PN EEE |<br>Fig 14a&b.   Basic Gate Charge Test Circuitand Waveformand Waveform GaNNEN<br>40 DYN SN<br>15V<br>20<br>pS AT<br>V(BR)DSS(BR)DSS<br>_ tp VDS L DRIVER PSS<br>aoe<br>0<br>R G D.U.T + 25 50 75 100 125 150<br>IASAS - [[V][DD]][[DD]] A Starting T  , Junction TemperatureJ (  C)°<br>/ a<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>)<br> Ω<br>RDS ( on) , Drain-to-Source On Resistance (<br>)<br> Ω<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>QGG<br>50KΩΩ<br>12V .2µFµFF<br>.3µFµFF QGSGS QGDGD<br>Tr D.U.T. | +-VDS-VDSVDSDS VGG w4<br>VGSGS<br>3mA fi Charge<br>oma |<br>IGG IDD<br>Current nme Sampling Resistors<br>Fig 14a&b.   Basic Gate Charge Test Circuitand Waveformand Waveform<br>15V<br>V(BR)DSS(BR)DSS<br>_ tp VDS L DRIVER<br>R G D.U.T +<br>- [[V][DD]][[DD]]<br>IASAS<br>/ a 20V<br>I AS tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 15a&b.** Unclamped Inductive Test circuit and Waveforms 

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**Fig 15c.** Maximum Avalanche Energy Vs. Drain Current 

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## IRF7465PbF 

## **SO-8 Package Outline** 

Dimensions are shown in millimeters (inches) 

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INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>Heo AE ee b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>a 6 q — H es—= D .189 .1968 4.80 5.00<br>E<br>1 2 3 4 0.25 [.010]  A es E .1497 a .1574 3.80 4.00<br>e .050  BASIC 1.27  BASIC<br>e1 .025  BASIC 0.635  BASIC<br>Te F o a<br>[e as a H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e<br>cH == L .016 .050 0.40 1.27<br>a y  0°  8°  0°  8°<br>e1 K x 45°<br>A<br>C<br>y<br>0.10 [.004]<br>an 8X b v A1 ere X L 8X L 8X c of<br>0.25 [.010]  C A B 7<br>és. OT<br>FOOTPRINT<br>NOTES:<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>rT<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. | “toad [|]<br>6.46 [.255]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>     A SUBSTRATE.<br>| 0003<br>3X 1.27 [.050] a_i<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## **SO-8 Part Marking** 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

DATE CODE (YWW) 

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XXXX<br>INTERNATIONAL F7101<br>a i e<br>RECTIFIERLOGO THEE<br>**----- End of picture text -----**<br>


P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y =  LAST DIGIT OF THE YEAR WW =  WEEK A =  ASSEMBLY SITE CODE LOT CODE 

PART NUMBER 

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7 

## IRF7465PbF 

## **SO-8 Tape and Reel** 

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TERMINAL NUMBER 1<br>ooo 6 a)<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )7.9 ( .312 ) | FEED DIRECTION —<br>**----- End of picture text -----**<br>


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NOTES:<br>**----- End of picture text -----**<br>


1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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 330.00<br>(12.992)<br>  MAX.<br>PY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


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NOTES :<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1. CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>


**==> picture [105 x 4] intentionally omitted <==**

**----- Start of picture text -----**<br>
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>**----- End of picture text -----**<br>


Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 22mH RG = 25Ω, IAS = 1.9A. 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

When mounted on 1 inch square copper board 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/04 

www.irf.com 

8 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF7465TRPBF/power-mosfet-n-channel-150-v-19-a-028-ohm-soic)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf7465trpbf/mosfet-n-ch-150v-1-9a-soic/dp/2777385RL)
---

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