# Power MOSFET, N Channel, 20 V, 16 A, 6500 µohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2725908/)

**URL**: https://novapart.co/products/IRF7456TRPBF/power-mosfet-n-channel-20-v-16-a-6500-ohm-soic
**SKU**: IRF7456TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6440
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power D

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (08-Jul-2021) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 16A |
| Drain Source On State Resistance | 6500µohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725908/)

## **SMPS MOSFET** 

## IRF7456PbF 

## HEXFET ® Power MOSFET 

## **Applications** 

High Frequency DC-DC Converters with Synchronous Rectification Lead-Free 

|HEXFET|HEXFET<br>Power MOSFET<br>®|Power MOSFET|
|---|---|---|
|**VDSS**|**RDS(on) max**|**ID**|
|**20V**|**0.0065**Ω|**16A**|



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A<br>Ultra-Low RDS(on) at 4.5V VGS S 1 8 DA<br>     Reduce Switching LossesLow Charge and Low Gate Impedance to S 2 7 D<br>. Fully Characterized Avalanche Voltage S ] 3 (ua in 6 D<br>    and Current G 4 5 D<br>ee<br>SO-8<br>Top View<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

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Symbol Parameter Max. Units<br>es<br>VDS Drain-Source Voltage 20 V<br>es VGS                                      Gate-to-Source Voltage                                                              ± 12                                  V<br>ah ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 16<br>ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 13 A<br>—_—_———aoa IPDMD @TA = 25°C Pulsed Drain CurrentMaximum Power Dissipation 1302.5 ee W<br>i PD @TA = 70°C Maximum Power Dissipation 1.6 W<br>                                  Linear Deratin > g Factor                                                                      0.02                              W/°C<br>a TJ , TSTG Junction and Storage Temperature Range -55  to + 150 °C<br>**----- End of picture text -----**<br>


**Thermal Resistance** 

**Parameter Max. Units** ~~**e**~~ RθJA S Maximum Junction-to-Ambient ~~e~~ 50 °C/W 

## **Typical SMPS Topologies** 

Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers 

www.irf.com 

> hrough ® are on page 8 

1 

## IRF7456PbF 

**Static @ TJ = 25°C (unless otherwise specified)** 

|es<br>a|**Parameter**<br>es<br>a|**Min.**<br>es<br>rerers|**Typ. **<br>es<br>es|**Max. **<br>es<br>es|**Units**<br>es<br>es|**Conditions**<br>es|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>a|Drain-to-Source Breakdown Voltage<br>a<br>~~|~~|20<br>rerers<br>~~ss~~<br>~~|~~|–––<br>es<br>~~ss~~|–––<br>es<br>~~ss~~|V<br>es<br>~~ss~~|VGS= 0V, ID= 250µA|
|∆V(BR)DSS/∆TJ<br>~~rs~~|JBreakdown Voltage Temp. Coefficient –––     0.024    –––     V/°C    Reference to 25°C, I<br>~~rs~~<br>~~|~~|–––     0.024    –––     V/°C    Reference to 25°C, I<br>~~rs~~<br>~~ss~~<br>~~|~~|–––     0.024    –––     V/°C    Reference to 25°C, I<br>~~rs~~<br>~~ss~~|–––     0.024    –––     V/°C    Reference to 25°C, I<br>~~rs~~<br>~~ss~~|–––     0.024    –––     V/°C    Reference to 25°C, I<br>~~rs~~<br>~~ss~~|–––     0.024    –––     V/°C    Reference to 25°C, ID= 1mA<br>~~rs~~|
|RDS(on)<br>~~So~~|Static Drain-to-Source On-Resistance<br>~~|~~<br>|<br>~~So~~|–––<br>~~ss~~<br>~~|~~<br>**|**~~UT~~<br>||0.00470.0065<br>~~ss~~<br>~~UT~~<br>|0.00470.0065<br>~~ss~~<br>~~UT~~<br>|Ω<br>~~ss~~<br>a|VGS= 10V, ID= 16A|
|||–––<br>~~ss~~<br>~~|~~<br>**|**~~UT~~<br>||0.00570.0075<br>~~ss ~~<br>~~UT~~<br>|0.00570.0075<br> ~~ss~~<br>~~UT~~<br>||VGS= 4.5V, ID= 13A|
|||–––<br>**|**~~UT~~<br>|a|0.011 0.020<br>~~UT~~<br>a<br>~~sD~~|0.011 0.020<br>~~UT~~<br>a<br>~~sD~~||VGS= 2.8V, ID= 3.5A|
|VGS(th)<br>~~ss~~<br>~~So~~|Gate Threshold Voltage<br>~~ss~~<br>~~So~~|0.6<br>~~ss~~|–––<br>~~ss~~<br>~~sD~~|2.0<br>~~ss~~<br>~~sD~~|V<br>~~ss~~|VDS= VGS, ID= 250µA<br>~~ss~~|
|IDSS<br>~~So~~|Drain-to-Source Leakage Current<br>~~So~~<br>~~|~~|–––<br>~~||~~|–––<br>~~sD~~|20<br>~~sD~~|µA|VDS= 16V, VGS= 0V<br>VDS= 16V, VGS= 0V, TJ= 125°C<br>~~PO~~|
|||–––<br>~~||~~|–––<br>~~sD~~|100<br>~~sD~~|||
|IGSS<br>~~So~~|Gate-to-Source Forward Leakage<br>Gate-to-Source Reverse Leakage<br>~~So~~<br>~~|~~|–––<br>–––<br>~~| |~~|–––<br>–––<br>~~sD~~|200<br>-200<br>~~sD~~|nA|VGS= 12V<br>~~PO~~|
|||||||VGS= -12V|



## **Dynamic @ TJ = 25°C (unless otherwise specified)** 

|gfs<br>Qg<br>Qgs<br>Qgd<br>td(on)<br>tr<br>td(off)<br>tf<br>Ciss<br>Coss<br>Crss<br>~~es~~<br>a~~es~~<br>~~ee~~<br>~~ee~~|**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>Forward Transconductance<br>44<br>–––<br>–––<br>S<br>Total Gate Charge<br>–––<br>41<br>62<br>Gate-to-Source Charge<br>–––<br>9.7<br>15<br>nC<br>Gate-to-Drain("Miller")Charge<br>–––<br>18<br>27<br>Turn-On Delay Time<br>–––<br>20<br>–––<br>Rise Time<br>–––<br>25<br>–––<br>Turn-Off Delay Time<br>–––<br>50<br>–––<br>Fall Time<br>–––<br>52<br>–––<br>Input Capacitance<br>–––<br>3640<br>–––<br>Output Capacitance<br>–––<br>1570<br>–––<br>Reverse Transfer Capacitance<br>–––<br>330<br>–––<br>pF<br>ns<br>es<br>es ee<br>es<br>~~es~~<br>es ee<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~es~~<br>~~ee e~~~~**e**~~<br>~~ee~~<br>~~e e~~<br>~~es~~<br>es ee|**Conditions**<br>VDS= 10V, ID= 16A<br>ID= 16A<br>VDS= 16V<br>VGS= 5.0V,<br>VDD= 10V<br>ID= 1.0A<br>RG= 6.0Ω<br>VGS= 4.5V<br>VGS= 0V<br>VDS= 15V<br>ƒ = 1.0MHz<br>~~®~~<br>~~®~~|
|---|---|---|



## **Avalanche Characteristics** 

**Parameter Typ. Max. Units** re EAS Single Pulse Avalanche Energy ––– 250 mJ eser IAR Avalanche Current ––– 16 A ee > EAR Repetitive Avalanche Energy ––– 0.25 mJ ee **©** 

## **Diode Characteristics** 

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 Parameter Min. Typ. Max. Units Conditions<br>IS Continuous Source Current ––– ––– 2.5 MOSFET symbol D<br>(Body Diode) showing  the<br>ISM Pulsed Source Current ––– ––– 130 integral reverse G<br>(Body Diode)  p-n junction diode. S<br>VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 2.5A, VGS = 0V °<br>] trr Reverse Recovery Time ––– 48 72 ns a) TJ = 25°C, IF = 2.5A<br>Qrr Reverse RecoveryCharge ––– 74 110 nC di/dt = 100A/µs<br>ee ee<br>2 www.irf.com<br>**----- End of picture text -----**<br>


## IRF7456PbF 

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**----- Start of picture text -----**<br>
 1000 VGS  1000 VGS<br>TOP 15V TOP 15V<br>10V 10V<br>4.5V 4.5V<br>3.0V HHL 3.0V HEL<br>2.7V 2.7V<br>2.5V 2.5V<br> 100 2.25V 2.25V<br>BOTTOM 2.0V BOTTOM 2.0V<br> 100<br> 10 ATT| ataTETTT TTT | TTT 9 A ee eteoe<br>a ee ee eee ee ee<br>FH HE HH  10 7a<br> 1 a | cath<br>ee ee i | 2.0V<br>0.1 ttmeee 2.0V or ee 20µs PULSE WIDTHT  = 25J °C  1 P E 20µs PULSE WIDTHT  = 150J °C<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>2.0<br>IDD = 16A<br>100.0<br>e ee, «SCC<br>TJ = 150°C<br>Pw : Leer 1.5 o PEEPLESnn<br>| | | | [a fT ct Le<br>PE E A EEL Le<br>10.0<br>R AO ETT<br>A Z TJ = 25°C I 1.0 Lett<br>ZT A a ee | Lee Lee<br>1.0 PA PLE) 0.5 SEPPPEELEPEELE<br>ee ee ee ee<br>VDS = 15V VGSGS = 10V<br>Ep 20µs PULSE WIDTH 0.0-60-60 PUEEEEELEEE -40 -20 0 20 40 EEE 60 80 100 120 140 160<br>0.1 2.0 2.2 2.4 2.6 2.8 3.0 3.2 T  , Junction TemperatureJJ (  C)°°<br>VGS, Gate-to-Source Voltage (V)<br>Fig 3.   Typical Transfer Characteristics Fig 4.   Normalized On-Resistance<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>)<br>(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


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2.0<br>IDD = 16A<br>«SCC<br>1.5 o PEEPLESnn<br>Le<br>EEL Le<br>ETT<br>1.0<br>Lett<br>| Lee Lee<br>0.5<br>SEPPPEELEPEELE<br>VGSGS = 10V<br>0.0-60-60 PUEEEEELEEE -40 -20 0 20 40 EEE 60 80 100 120 140 160<br>T  , Junction TemperatureJJ (  C)°°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


## **Fig 4.** Normalized On-Resistance Vs. Temperature 

www.irf.com 

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## IRF7456PbF 

**==> picture [211 x 473] intentionally omitted <==**

**----- Start of picture text -----**<br>
6000<br>VGS = 0V, f = 1MHz<br>|| Ciss = Cgs + Cgd , C      SHORTEDds<br>5000 CCrssoss == CCgdds + Cgd<br>—<br>4000<br>Ciss<br>Roe f e<br>INE ee ll<br>3000 N E ll<br>NG eel<br>2000 Coss<br>e p<br>1000 eee r e elll<br>Crss<br>0 e| Le l TTl<br> 1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 5.   Typical Capacitance Vs.<br>Drain-to-Source Voltage<br> 100<br>===> 2S==<br>T  = 150  CJ °<br>KI TT<br> 10<br>Pit sZAT | |<br>rT | ff ff Jy _[ [ [| T— [  Yf<br>T  = 25  CJ °<br>ph P RT<br> 1 Pie | | |<br>eta<br>0.1 Py | Et V      = 0 V GS<br>0.2 0.6 1.0 1.4 1.8 2.2<br>V     ,Source-to-Drain Voltage (V)SD<br>C, Capacitance (pF)<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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**----- Start of picture text -----**<br>
12<br>oo ID = 16A VDS = 16V<br>10<br>ea<br>8<br>| | | | {[ | [A]<br>PF | | | [| | xr |]<br>6 |P|| |{| ||Yt| Yl [ |<br>4<br>2 fF||[tyfA| || [|{Al{[ | | ||{ ||[ |<br>FOR TEST CIRCUIT<br>0 yVJi}| | |icl ) SEE FIGURE ow<br>0 20 40 60 80<br>Q   , Total Gate Charge (nC)G<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br> 1000<br>OPERATION IN THIS AREA LIMITED<br>BY R<br>DS(on)<br>Sd<br>a<br>10us<br> 100 a tt t<br>Seeadet emesis Ol<br>YT v_ TIT | | TRI + 100us TTT<br>1ms<br> 10 Eraati mecatis eat i<br>UT el<br>10ms<br>S  T TAJ = 25  C= 150  C° ° AHSSt E Hi<br> 1 e  Single Pulse s Le eee inti|<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

www.irf.com 

4 

## IRF7456PbF 

**==> picture [431 x 473] intentionally omitted <==**

**----- Start of picture text -----**<br>
20 PEELE EEE Vos N\/N\/\-><br>15 SRRPERKnw LL ns Ves but DD<br>10 PitTAKEIN )14.5V<br>NX PulseWidth  1 —s<br>Nm Duty Factor  0.1 %<br>5 Fig 10a.   Switching Time Test Circuit<br>VDS<br>90%<br>0 PET [<br>25 50 75 100 125 150<br>T   , Case TemperatureC (  C)°<br>ee  L EE}  yA 10% / \ YA<br>Fig 9.   Maximum Drain Current Vs.Case Temperature VGS f\« le >|\/pl< ><br>td(on) tr td(off) tf<br>Fig 10b.   Switching Time Waveforms<br> 100<br>D = 0.50<br>a aa eee et —— 0<br> 10 e 0.20 l<br>0.10<br>0.05<br>ee | aEee  ———— | | |<br>0.02<br> 1<br>0.01<br>SINGLE PULSE PDM<br>(THERMAL RESPONSE)<br>t1<br>0.1 e |T EAR HT EL t2<br>a a aOeOO Notes:<br>PF 1. Duty factor D = t   / t1 2<br>en 2. Peak T J = P DM x  Z thJA + TA<br>0.01<br>0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

www.irf.com 

5 

## IRF7456PbF 

**==> picture [434 x 208] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.0062<br>0.012<br>VGS = 4.5V<br>l s O A<br>0.0058<br>= 0.010 o no<br>! P TE] R ARER<br>0.0054<br>Pity<br>0.008 P APER<br>0.0050 VGS = 10V ef Et ID = 16A td<br>0.006<br>= p th it<br>e t] ESS E<br>0.0046<br>0.004 PEttt | Ee<br>0 20 40 60 80 100<br>0 4 8 12 16<br>ID , Drain Current (A)<br>VGS, Gate -to -Source Voltage  (V)<br>)<br>Ω<br>RDS (on) , Drain-to-Source On Resistance ( )<br>Ω<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 12.** On-Resistance Vs. Drain Current 

**==> picture [213 x 240] intentionally omitted <==**

**----- Start of picture text -----**<br>
Current Regulator<br>Same Type as D.U.T.<br>QG<br>50KΩ<br>12V .2µF<br>.3µF QGS QGD<br>= D.U.T. +-VDS VG J<br>VGS<br>3mA Charge<br>OEGaoe IG ID :<br>Current Sampling Resistors<br>Fig 14a&b.   Basic Gate Charge Test Circuit<br>and Waveform<br>15V<br>V(BR)DSS<br>J tp VDS L DRIVER<br>R G D.U.T +<br>J IAS - [V][DD]<br>; 20V<br>I AS 7 tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 13.** On-Resistance Vs. Gate Voltage 

**==> picture [210 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
600<br>ID<br>TOP 7.2A<br>500 10A<br>Coboee BOTTOM 16A<br>Oe a<br>400<br>NKALLL<br>NOR TOI IS<br>300<br>PFNDC<br>RONAN<br>200<br>PNDNRTO OIL<br>100 TTne ISSROSALI<br>0<br>25 SS 50 75 100 125 150<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 15a&b.** Unclamped Inductive Test circuit and Waveforms 

6 

**Fig 15c.** Maximum Avalanche Energy Vs. Drain Current 

www.irf.com 

## IRF7456PbF 

## SO-8 Package Outline(Mosfet & Fetky) 

Dimensions are shown in milimeters (inches) 

## SO-8 Part Marking Information 

www.irf.com 

7 

## IRF7456PbF 

## SO-8 Tape and Reel 

Dimensions are shown in milimeters (inches) 

**==> picture [192 x 128] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>oO 0 ©<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br>NOTES:<br>1.   CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>


2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

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**----- Start of picture text -----**<br>
3.   OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
 330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>LX 12.40 ( .488 )<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
NOTES :<br>1. CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>**----- End of picture text -----**<br>


® Repetitive rating;  pulse width limited by ©) Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. ) When mounted on 1 inch square copper board,  t<10 sec ) Starting TJ = 25°C, L = 2.0mH RG = 25Ω, IAS = 16A. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 08/2008 

www.irf.com 

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---

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