# Power MOSFET, P Channel, 20 V, 15 A, 8200 µohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2468022RL/)

**URL**: https://novapart.co/products/IRF7425TRPBF/power-mosfet-p-channel-20-v-15-a-8200-ohm-soic
**SKU**: IRF7425TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3980
**Stock**: 10+
**Lead Time**: 147 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-15A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0082oh; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 15A |
| Drain Source On State Resistance | 8200µohm |
| Gate Source Threshold Voltage Max | 1.2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2468022RL/)

|**VDS**|**-20**|**V**|
|---|---|---|
|**RDS(on) max**<br>(@VGS=  -4.5V)|**8.2**|**m**Ω|
|**RDS(on) max**<br>(@VGS=  -2.5V)|**13**||
|()<br>**Qg (typical)**|**87**|**nC**|
|**ID **<br>(@TA= 25°C)|**-15**|**A**|



|Top View<br>8<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>D<br>D<br>D<br>G<br>S<br>A<br>D<br>S<br>S||SO-8|
|---|---|---|



## **Benefitsenefitsnefitsefitsfitsts** 

**Features Benefitsenefitsnefitsefitsfitsts** Industry-standard pinout SO-8 Package ⇒ Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1,Consumer qualification Increased Reliability 

|**Base Part  Number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRF7425PbF|SO-8|Tube/Bulk|95|IRF7425PbF|
|||Tape andReel|4000|IRF7425TRPbF|



ee **Parameter Max. Units** VDS Drain- Source Voltage -20 V ~~es~~ ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -15 ~~es~~ ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -12 A ~~es ©~~ IDM Pulsed Drain Current -60 ~~©~~ PD @TA = 25°C Power Dissipation 2.5 PD @TA = 70°C Power Dissipation 1.6 ~~es OV~~ Linear Derating Factor 20 mW/°C ~~es ©~~ VGS Gate-to-Source Voltage ± 12 V ~~eseG~~ TJ, TSTG Junction and Storage Temperature Range -55  to + 150 °C ~~ee~~ 

## **Thermal Resistance** 

|~~$e~~|**Parameter**<br>~~$ept~~|**Max.**<br>~~pt~~|**Units**|
|---|---|---|---|
|RθJA<br>~~$e~~|Maximum Junction-to-Ambient<br>~~$ept~~|50<br>~~pt~~|°C/W|



## ���������� 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ. **|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage|-20|–––|–––|V|VGS= 0V, ID= -250μA|
|ΔV(BR)DSS/ΔTJ|Breakdown Voltage Temp. Coefficient|–––|0.010|–––|V/°C|Reference to 25°C, ID= -1mA|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|–––|8.2|mΩ|VGS= -4.5V, ID= -15A�|
|||–––|–––|13||VGS= -2.5V,ID= -13A�|
|VGS(th)|Gate Threshold Voltage|-0.45|–––|-1.2|V|VDS= VGS, ID= -250μA|
|gfs|Forward Transconductance|44|–––|–––|S|VDS= -10V, ID= -15A|
|IDSS|Drain-to-Source Leakage Current|–––|–––|-1.0|��|VDS= -16V,VGS= 0V|
|||–––|–––|-25||VDS= -16V, VGS= 0V, TJ= 70°C|
|����|Gate-to-Source Forward Leakage|–––|–––|-100|��|VGS= -12V|
||Gate-to-Source Reverse Leakage|–––|–––|100||VGS= 12V|
|Qg|Total Gate Charge|–––|87|130|nC|ID= -15A<br>VDS= -10V<br>VGS= -4.5V|
|Qgs|Gate-to-Source Charge|–––|18|27|||
|Qgd|Gate-to-Drain("Miller")Charge|–––|21|32|||
|td(on)|Turn-On DelayTime|–––|13|–––|��|VDD= -10V�<br>ID= -1.0A<br>RG= 6.0Ω<br>VGS= -4.5V|
|tr|Rise Time|–––|20|–––|||
|td(off)|Turn-Off Delay Time|–––|230|–––|||
|tf|Fall Time|–––|160|–––|||
|Ciss|Input Capacitance|–––|7980|–––|pF|VGS= 0V<br>VDS= -15V<br>ƒ = 1.0kHz|
|Coss|Output Capacitance|–––|1480|–––|||
|Crss|Reverse Transfer Capacitance|–––|980|–––|||



## **Source-Drain Ratings and Characteristics** 

||**Parameter**|**Min.**|**Typ. **|**Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS|Continuous Source Current<br>(Body Diode)|–––|–––|�2.5|�|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>S<br>D<br>G|
|ISM|Pulsed Source Current<br>(BodyDiode) �|–––|–––|�60|||
|VSD|Diode Forward Voltage|–––|–––|-1.2|V|TJ= 25°C, IS= -2.5A, VGS= 0V�|
|trr|Reverse RecoveryTime|–––|120|180|ns|TJ= 25°C, IF= -2.5A<br>di/dt = -100A/μs �|
|Qrr|Reverse Recovery Charge|–––|160|240|nC||



## **������** 

- Repetitive rating;  pulse width limited by 

- max. junction temperature. 

   - Surface mounted on 1 in square Cu board,  t ≤  ������ 

- Pulse width ≤ 400μs; duty cycle ≤���� 

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**==> picture [202 x 193] intentionally omitted <==**

**----- Start of picture text -----**<br>
 1000<br>VGS<br>TOP -7.0V<br>-5.0V<br>-4.5V<br>-2.5V<br> 100 --1.8V1.5V 1<br>-1.2V<br>BOTTOM -1.0V<br> 10 Zee ee<br>a a<br> 1 ett<br>ea<br>0.1 ——— eee -1.0V<br>ao 20μs PULSE WIDTH<br>T  = 25J °C<br>0.01 Pettit tt<br>0.1  1  10  100<br>-V     , Drain-to-Source Voltage (V)DS<br>D<br>-I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**==> picture [202 x 194] intentionally omitted <==**

**----- Start of picture text -----**<br>
 1000<br>VGS<br>TOP -7.0V<br>-5.0V<br>-4.5V<br>-2.5V<br>-1.8V<br> 100 -1.5V -1.2V IIHT<br>BOTTOM -1.0V<br>oes eal mma<br> 10<br>aS Se el<br>Se<br>Ve -1.0V Hl<br> 1<br>oe ee<br>Ath a 20μs PULSE WIDTH T  = 150J °C<br>0.1 Toni cit<br>0.1  1  10  100<br>-V     , Drain-to-Source Voltage (V)DS<br>D<br>-I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

**Fig 2.** Typical Output Characteristics 

**==> picture [436 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
 100 2.0 ID = -15A<br>a==SSSS==>—== Poe LEE<br>A °<br>T  = 150  C J<br>ARSE TETRA<br>| 1.5 aE aRA<br>| SASH<br> 10 SE>740EREEEE PEELE<br>S77 SS PELE<br>BA = SSE PEELEaa<br>A 1.0 EErT<br>7S<br>°<br>HI T  = 25  CJ er<br> 1<br>eeaeee ee 0.5 HATHA AATAOTOATAATOATI<br>A7Aee ee ee ES EEE<br>V      = -15VDS<br>20μs PULSE WIDTH VGS = -4.5V<br>0.1 PeErE TP | 0.0 MEADDU AERO ORIEOORAARAA<br>1.0 1.2 1.4 1.6 1.8 2.0 2.2 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>-V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>D<br>-I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

**==> picture [437 x 488] intentionally omitted <==**

**----- Start of picture text -----**<br>
12000 8<br>VGS = 0V, f = 1MHz ID = -15A<br>Ciss = Cgs + Cgd , C      SHORTEDds VDS =-16V<br>10000 qT CCrssoss == CCgdds + Cgd V DS =-10V<br>6<br>Ciss<br>8000 | Foe<br>=oee el po ><br>6000 4<br>SSH<br>4000 FT [LTA] EE TT YAd |<br>2<br>2000 C oss<br>SSE pee<br>Crss<br>=DL =o Annan<br>0 0<br> 1  10  100 0 40 80 120 160<br>-V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100  1000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br> 10  100<br>pit i yy i|<br>T  = 150  CJ °<br>100us<br> 1 pf ff  10 Sai ects eat 1ms<br>pi iy 7 | | SA<br>T  J = 25  C°<br>10ms<br> T T AJ = 25  C= 150  C° °<br>0.1 HRAyA V      = 0 V GS  1 ot  Single Pulse ICC Ce<br>0.2 0.4 0.6 0.8 1.0 0.1  1  10  100<br>-V     ,Source-to-Drain Voltage (V)SD -V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D-<br>SD<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

**==> picture [203 x 227] intentionally omitted <==**

**----- Start of picture text -----**<br>
15 BN NY<br>12<br>PU<br>pt tT NT EL<br>9<br>pot | NI TE<br>Eee eeeNEe<br>SRR \<br>6<br>3<br>0<br>25 50 75 100 125 150<br>T   , Case TemperatureCC (  C)°°<br>Fig 9.   Fi Maximum Drain Current Vs. tt tt | | |<br>D<br>-I   , Drain Current (A)<br>**----- End of picture text -----**<br>


**==> picture [96 x 46] intentionally omitted <==**

**----- Start of picture text -----**<br>
-<br>+<br>≤ 1  us<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 10a.** Switching Time Test Circuit 

**==> picture [420 x 328] intentionally omitted <==**

**----- Start of picture text -----**<br>
td(on) tr td(off) tf<br>VGS<br>||<br>0 10%<br>25 50 75 100 125 150<br>T   , Case TemperatureCC (  C)°°<br>|<br>90%<br>Fig 9.   Fi Maximum Drain Current Vs. tt tt | | | VDS Yo 7\ :<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 100<br>D = 0.50<br>eee err<br> 10 0.20<br>0.10<br>SS<br>0.05<br>= Sra er TI<br>0.02<br> 1<br>eeNE 0.01 a aenent ceoe atl A | | |<br>=a cc8 PDM<br>ee cael ee a ee ee t1<br>SINGLE PULSE<br>0.1 OA (THERMAL RESPONSE) t 2<br>Sa ee ee | ee| |ae<br>a2 Notes:<br>ee eee 1. Duty factor D = t   / t1 2<br>ee 2. Peak T J = P DM x  Z thJA + TA<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

**==> picture [434 x 476] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.015 0.010 Ty<br>0.009<br>a VGS = -2.5V<br>a><br>0.008<br>| |<br>a ee<br>0.010 0.007 ee<br>ID = -15A 0.006 eeee<br>V GS  = -4.5V<br>iPr<br>0.005 0.005<br>1.0 2.0 3.0 4.0 5.0 0 10 20 30 40 50 60<br>-VGS, Gate -to -Source Voltage  (V) -ID , Drain Current (A)<br>Fig 12.    Typical On-Resistance Vs. Fig 13.    Typical On-Resistance Vs.<br>Gate Voltage Drain Current<br>Current Regulator<br>Same Type as D.U.T.<br>50K Ω<br>QG 12V .2 μ F<br>.3 μ F<br>-<br>a QGS n QGD e s rhe D.U.T. | +VDS<br>VGS<br>VG<br>-3mA<br>C am IG ID<br>Charge Current Sampling Resistors<br>)<br> Ω<br>RDS (on) , Drain-to-Source On Resistance (<br>)<br>Ω<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 14a.** Basic Gate Charge Waveform 

**Fig 14b.** Gate Charge Test Circuit 

**==> picture [431 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.0 RU 120 CNT TUM TANT ETI TT<br>100<br>\ man<br>2.5 80<br>HSH EASeu et at<br>LENGE 60 N<br>ID = -250μA<br>2.0 Py TT ENCIN I 40 RUNPETITa ANATaNT RNaEEET aETT TT<br>BRN ee NS a<br>20<br>1.5 Py TT Tt tLMNON 0 eREea a a see eee<br>-75 -50 -25 0 25 50 75 100 125 150 0.001 0.010 0.100 1.000 10.000 100.000<br>TJ , Temperature ( °C ) Time (sec)<br>-VGS(th) ,  Variace ( V )<br>Power (W)<br>**----- End of picture text -----**<br>


**==> picture [163 x 23] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig 15.   Typical Vgs(th) Variance Vs.<br> Juction Temperature<br>**----- End of picture text -----**<br>


**==> picture [144 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig 16 Typical Power Vs. Time<br>**----- End of picture text -----**<br>


## ���������� 

## **SO-8 Package Outline** 

Dimensions are shown in millimeters (inches) 

**==> picture [384 x 344] intentionally omitted <==**

**----- Start of picture text -----**<br>
INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>6 H D .189 .1968 4.80 5.00<br>E<br>0.25 [.010]  A E .1497 .1574 3.80 4.00<br>1 2 3 4<br>e .050  BASIC 1.27  BASIC<br>e1 .025  BASIC 0.635  BASIC<br>H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e<br>L .016 .050 0.40 1.27<br>y  0°  8°  0°  8°<br>e1 K x 45°<br>A<br>C<br>y<br>0.10 [.004]<br>8X b A1 8X L 8X c<br>0.25 [.010]  C A B 7<br>FOOTPRINT<br>NOTES:<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>6.46 [.255]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>     A SUBSTRATE.<br>3X 1.27 [.050]<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## **SO-8 Part Marking** 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

**==> picture [341 x 102] intentionally omitted <==**

**----- Start of picture text -----**<br>
DATE CODE (YWW)<br>P =  DESIGNATES LEAD-FREE<br>PRODUCT (OPTIONAL)<br>Y =  LAST DIGIT OF THE YEAR<br>XXXX WW =  WEEK<br>INTERNATIONAL F7101 A =  ASSEMBLY SITE CODE<br>RECTIFIER<br>LOT CODE<br>LOGO<br>PART NUMBER<br>**----- End of picture text -----**<br>


**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

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## ���������� 

## **SO-8 Tape and Reel** (Dimensions are shown in millimeters (inches)) 

**==> picture [197 x 226] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br>NOTES:<br>1.   CONTROLLING DIMENSION : MILLIMETER.<br>2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).<br>3.   OUTLINE CONFORMS TO EIA-481 & EIA-541.<br> 330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


**==> picture [98 x 13] intentionally omitted <==**

**----- Start of picture text -----**<br>
NOTES :<br>1. CONTROLLING DIMENSION : MILLIMETER.<br>2. OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>**----- End of picture text -----**<br>


**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

|**Note: For the most current drawing please refer to IR website at:**<br>**http://www.irf.com/packa**|**Note: For the most current drawing please refer to IR website at:**<br>**http://www.irf.com/packa**|**Note: For the most current drawing please refer to IR website at:**<br>**http://www.irf.com/packa**|
|---|---|---|
|**Qualification information**<br>†|||
|Qualification level|Consumer<br>(per JEDEC JESD47F<br>††guidelines)||
|Moisture Sensitivity Level|SO-8|MS L1<br>(per JEDEC J-STD-020D<br>††)|
|RoHS compliant|<br><br>Yes||



†     Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability 

††   Applicable version of JEDEC standard at the time of product release 

## **Revision History** 

|**Revision History**|**Revision History**|
|---|---|
|**Date**<br>|**Comments**|
|10/29/2013|•Added ordering information on page 1.<br>• Updated datasheet with new IR corporate template.|



**==> picture [88 x 37] intentionally omitted <==**

**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

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- [Supplier page](https://es.farnell.com/infineon/irf7425trpbf/mosfet-p-ch-20v-15a-soic-8/dp/2468022RL)
---

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