# Power MOSFET, P Channel, 30 V, 11 A, 0.0135 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2468021RL/)

**URL**: https://novapart.co/products/IRF7424TRPBF/power-mosfet-p-channel-30-v-11-a-00135-ohm-soic
**SKU**: IRF7424TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3480
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-11A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0135oh; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 11A |
| Drain Source On State Resistance | 0.0135ohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2468021RL/)

## po 96943 IRF7424PbF HEXFET ® Power MOSFET 

Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free 

|ee|ee)||
|---|---|---|
|**VDSS**<br>ee|**RDS(on) max (m**<br>ee)|**ID**|
|**-30V**<br>ee<br>a|**DS(on)**<br>13.5@VGS= -10V<br>ee)<br>a|-11A|
||22@VGS= -4.5V<br>a|-8.8A|



## **Description** 

These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.  This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. 

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.  With these improvements, multiple devices can be used in an application with dramatically reduced board space.  The package is designed for vapor phase, infrared, or wave soldering technique 

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A<br>S 1 8 D<br>S 2 7 D<br>S 3 6 D<br>G 4 5 D<br>SO-8<br>Top View<br>**----- End of picture text -----**<br>


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[OCOUdOC‘CSCSSOCO™OCOCOCOOCOCSCSC“‘(<“‘RNNOCOSCSCSC“‘“(™#SYNN Parameter Max. Units<br>a VDS a Drain- Source Voltage -30 V<br>a ID @ TA = 25°C a Continuous Drain Current, VGS @ -10V -11<br>ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -9.3 A<br>a IDM a Pulsed Drain Current  e -47<br>PD @TA = 25°C Power Dissipation  2.5<br>a PD @TA = 70°C a Power Dissi a pation  1.6<br>a Linear Derating Factor 20 mW/°C<br>a VGS Gate-to-Source Voltage  ± 20 V<br>A TJ, TSTG Junction and Storage Temperature Range -55  to + 150 °C<br>**----- End of picture text -----**<br>


**Thermal Resistance** 

~~a~~ **Parameter Max. Units** RθJA Maximum Junction-to-Ambient ~~ee~~ 50 °C/W www.irf.com 1 

10/04/04 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|re<br>~~es~~<br>~~es~~|**Parameter**<br>re<br><br>|**Min.**<br>re<br><br>~~**Gs**~~<br>|**Typ. **<br>re<br><br>~~**Gs**~~<br>|**Max. **<br>re<br>~~Qs~~<br><br>~~**Gs**~~|**Units**<br>re<br>~~Gs~~<br><br>~~**Gs**~~|**Conditions**<br>re<br>|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~es~~<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~es~~<br>|-30<br>~~es~~<br>~~**Gs**~~<br>|–––<br>~~es~~<br>~~**Gs**~~<br>|–––<br>~~Qs~~<br>~~es~~<br>~~**Gs**~~|V<br>~~Gs~~<br>~~es~~<br>~~**Gs**~~|VGS= 0V, ID= -250µA<br>~~es~~|
|∆V(BR)DSS/∆TJ<br>~~es~~<br>~~es~~|Breakdown Voltage Temp. Coefficient<br><br>~~e~~|–––<br><br>~~**Gs**~~<br>~~e~~|0.019<br><br>~~**Gs**~~<br>~~e~~|–––<br>~~Qs~~<br><br>~~**Gs**~~|V/°C<br>~~Gs~~<br><br>~~**Gs**~~|Reference to 25°C, ID= -1mA<br>|
|RDS(on)<br>~~es~~<br>~~2~~<br>~~a~~|Static Drain-to-Source On-Resistance<br><br>~~2~~<br>**|**<br>~~eG~~|–––<br>~~**Gs**~~<br><br>~~2~~<br>**|**|–––<br>~~**Gs**~~<br><br>~~2~~|13.5<br>~~**Gs**~~<br>~~2~~|mΩ<br>~~**Gs**~~<br>~~2~~<br>~~GOOG~~|VGS= -10V, ID= -11A<br>~~2~~|
|||–––<br>~~2~~<br>**|**<br>~~eG~~|–––<br>~~2~~<br>|22<br>~~2~~<br>~~GOOG~~||VGS= -4.5V, ID= -8.8A<br>~~2~~<br>~~GOOG~~|
|VGS(th)<br>~~a~~<br>~~es~~|Gate Threshold Voltage<br>**|**<br>~~eG~~<br>~~e~~|-1.0<br>**|**<br>~~eG~~<br>~~e~~<br>~~G~~|–––<br><br>~~e~~~~**s**~~<br>~~G~~|-2.5<br>~~GOOG~~<br>~~**s**~~<br>~~G~~|V<br>~~GOOG~~<br>~~**s**~~|VDS= VGS, ID= -250µA<br>~~GOOG~~<br>~~**s**~~|
|gfs<br>~~a ~~<br>~~es~~|Forward Transconductance<br> ~~eG~~<br>~~e~~|17<br>~~eG ~~<br>~~e~~<br>~~G~~|–––<br> <br>~~e~~~~**s**~~<br>~~G~~|–––<br> ~~GOOG~~<br>~~**s**~~<br>~~G~~|S<br>~~GOOG~~<br>~~**s**~~|VDS= -10V, ID= -11A<br>~~GOOG~~<br>~~**s**~~|
|IDSS<br>~~es~~<br>~~ee~~|Drain-to-Source Leakage Current<br>~~e~~<br>~~ee~~|–––<br>~~e~~<br>~~G~~<br>~~ee~~|–––<br>~~e~~~~**s**~~<br>~~G~~<br>~~ee~~|-15<br>~~**s**~~<br>~~G~~<br>~~ee~~|~~**s**~~<br>~~ee~~|VDS= -24V, VGS= 0V<br>~~**s**~~<br>~~ee~~|
|||–––<br>~~ee~~|–––<br>~~ee~~|-25<br>~~ee~~||VDS= -24V, VGS= 0V, TJ= 70°C<br>~~ee~~|
|~~fess~~|Gate-to-Source Forward Leakage<br>~~fess~~|–––<br>~~fess~~<br>~~ee~~|–––<br>~~fess~~|-100<br>~~fess~~|~~fess~~|VGS= -20V<br>~~fess~~|
||Gate-to-Source Reverse Leakage<br>~~fess~~<br>~~ee~~|–––<br>~~fess~~<br>~~ee~~<br>~~ee~~|–––<br>~~fess~~<br>~~ee~~|100<br>~~fess~~||VGS= 20V<br>~~fess~~|
|Qg<br>~~a~~<br>es|Total Gate Charge<br>~~a~~|–––<br>~~ee~~<br>~~a~~|75|110|nC|ID= -11A<br>VDS= -15V<br>VGS= -10V<br>@|
|Qgs<br>es<br>~~ee~~|Gate-to-Source Charge|–––|14|21|||
|Qgd<br>es<br>~~ee~~<br>~~a~~|Gate-to-Drain("Miller")Charge|–––|12|18|||
|td(on)<br>~~ee~~<br>~~a~~<br>es|Turn-On Delay Time|–––|15|–––||VDD= -15V<br>ID= -1.0A<br>RG= 6.0Ω<br>VGS= -10V<br>@|
|tr<br>~~a~~<br>es<br>ee|Rise Time<br>~~ee~~|–––<br>~~ee~~|23<br>~~ee~~|–––|||
|td(off)<br>es<br>ee<br>~~es~~|Turn-Off Delay Time<br>~~ee~~|–––<br>~~ee~~|150<br>~~ee~~|–––|||
|tf<br>ee<br>~~es~~<br>~~ee~~|Fall Time<br>~~ee~~|–––<br>~~ee~~|76<br>~~ee~~|–––|||
|Ciss<br>~~es~~<br>~~ee~~<br>es|Input Capacitance|–––|4030|–––|pF|VGS= 0V<br>VDS= -25V<br>ƒ = 1.0kHz|
|Coss<br>~~ee~~<br>es<br>ee|Output Capacitance|–––|580|–––|||
|Crss<br>es<br>ee|Reverse Transfer Capacitance|–––|410|–––|||



## **Source-Drain Ratings and Characteristics** 

|~~a~~|**Parameter**<br>~~ee~~|**Min.**<br>~~ss~~|**Typ. **<br>~~ss~~|**Max.**<br>~~ss~~|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS<br>~~a~~|Continuous Source Current<br>(Body Diode)<br>~~ee~~|~~ss~~|~~ss~~|2.5<br>~~ss~~||MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>S<br>D<br>G|
|ISM|Pulsed Source Current<br>(BodyDiode)|||47|||
|VSD<br>~~a~~<br>~~a~~|Diode Forward Voltage<br>~~ee~~|–––<br>~~ee~~|–––<br>~~eeeG~~|-1.2<br>~~eG~~|V<br>~~eG~~<br>es|TJ= 25°C, IS= -2.5A, VGS= 0V<br>~~ee~~|
|trr<br>~~ee~~<br>~~a~~|Reverse Recovery Time<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>ee|40<br>~~ee~~<br>ee|60<br>~~ee~~|ns<br>~~ee~~<br>es|TJ= 25°C, IF= -2.5A<br>di/dt = -100A/µs<br>~~ee~~<br>~~ee~~<br>®|
|Qrr<br>~~ee~~<br>~~a~~|Reverse Recovery Charge<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>ee|47<br>~~ee~~<br>ee|71<br>~~ee~~|nC<br>~~ee~~<br>es||



Repetitive rating;  pulse width limited by max. junction temperature. 

Surface mounted on 1 in square Cu board 

Pulse width ≤ 400µs; duty cycle ≤ 

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 1000  1000<br>VGS VGS<br>TOP -10V TOP -10V<br>-4.5V-3.7V a -4.5V-3.7V Heo<br>-3.5V aa -3.5V<br>-3.3V -3.3V<br>-3.0V a lll -3.0V a ee<br> 100 -2.7V -2.7V<br>BOTTOM -2.5V BOTTOM -2.5V<br> 100<br>aD 0 60 ee eo<br> 10 | Agee ee | TTI -—HAE<br>aia o_o<br> 10<br> 1<br>-2.5V<br>-2.5V<br>0.1 aeAT ee 20µs PULSE WIDTHT  = 25J eee °C  1 O Y K || S e 20µs PULSE WIDTHT  = 150J t °C<br>0.1  1  10  100 0.1  1  10  100<br>-V     , Drain-to-Source Voltage (V)DS -V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 100 2.0 ID = -11A<br>== SSS SS PeceecLLLLLLLLLEEEE<br>ee ee eee eee eee<br>T  = 150  CJ ° 1.5<br> 10 iA) | | | | cl<br>[Ge Let -<br>1.0<br>i7Y7i [| jf; [J 7 JT TT fy Ho rae<br>= T  = 25  CJ ° ff TELL<br> 1 7L | i | | | | | anal<br>ee ee 0.5 PELLET<br>ERa ee es ee ee ee PEELE<br>V      = -15VDS<br>20µs PULSE WIDTH VGS = -10V<br>0.1 FCEEPr | 0.0 PE PE<br>2.5 3.0 3.5 4.0 4.5 5.0 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>-V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>D D<br>-I   ,  Drain-to-Source Current (A) -I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>D<br>-I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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6000 12<br>5000 — t VCCCGSissrssoss ==== T] 0V,CCCgsgdds + C+ Cf = 1MHzgd ,gd C      SHORTEDds 10 7ees ID = -11A VVDSDS ==-24V-15V a<br>Ciss<br>hp a ee eZ<br>4000 8<br>ee =an0sime ALI ae<br>3000 ee | 6 TAHAaa<br>0 ee a 774<br>2000 4<br>pS}<br>1000 Coss Soon 2 AT TTT<br>P= Crss CERT PATTI<br>0 Sot == Con 0 Ae ee<br> 1  10  100 0 20 40 60 80<br>-V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100  100<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>|] T  = 150  CJ ° |} ft | PTI NTIS TT<br> 10<br>100us<br>a==nnaS aS62e"  10 CALTIMIEASONUIIS LE Lul<br>1ms<br> 1<br>7 | fi | | See<br>———————————— T  = 25  CJ ° eee een<br>FS R H  T TAJ = 25  C= 150  C° ° T 10ms<br>0.1 ( Ae V      = 0 V GS  1 t  Single Pulse TLtE vm EEL<br>0.4 0.6 0.8 1.0 1.2 0.1  1  10  100<br>-V     ,Source-to-Drain Voltage (V)SD -V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D-<br>SD<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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12 pi tt tT tT tt Vos Ro<br>10 nN Ves<br>Pp] AA ET Tt ; DUT.<br>8 a es fe |. +- 7<br>6 PtPte ttETEENEEEN ET JNes ≤ 1<br>ae Duty Factor ≤ 0.1 %<br>4 Pt eT ET ET EK Fig 10a.   Switching Time Test Circuit<br>2 PTE TE TE TT<br>td(on) tr td(off) tf<br>VGS<br>0 10%<br>25 50 75 100 125 150<br>T   , Case TemperatureC (  C)°<br>|<br>90%<br>Fig 9.   Maximum Drain Current Vs. VDS<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 100<br>l D = 0.50 A m| ee| TT TT<br> 10 0.20<br>0.10<br>0.05 acc<br>eee en oe || |<br>0.02<br> 1 e 0.01 eeee|<br>a ee eee ee eee eee PDM<br>ie SINGLE PULSE ce t1<br>0.1 =. e (THERMAL RESPONSE) T t2<br>Notes:<br>a 1. Duty factor D = t   / t1 2<br>ee 2. Peak T J = P DM x  Z thJA + TA<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>D<br>-I   , Drain Current (A)<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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0.035 0.030<br>e e<br>0.030<br>0.025<br>0<br>S SSSSe ee e ee<br>VGS = -4.5V<br>0.025<br>e P t TYtA EET] 0.020 pp| Le|<br>0.020<br>tt a T]<br>I = -11A<br>D<br>0.015 APTa NNS E)R 0.015 S EEf ps. VGS  t = -10V<br>pip  Se pf fp<br>0.010 Pt 0.010 PT tT tT<br>2.0 4.0 6.0 8.0 10.0 0 10 20 30 40 50 60<br>-VGS, Gate -to -Source Voltage  (V) -ID , Drain Current (A)<br>)<br>Ω<br>RDS (on) , Drain-to-Source On Resistance (<br>)<br>Ω<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 12.** Typical On-Resistance Vs. Gate Voltage 

**Fig 13.** Typical On-Resistance Vs. Drain Current 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>QG 12V .2µF<br>OT re .3µF<br>QGS QGD D.U.T. +-VDS<br>VGS<br>VG « p< - (a<br>-3mA<br>IG ID<br>Charge Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 14a.** Basic Gate Charge Waveform 

**Fig 14b.** Gate Charge Test Circuit 

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**----- Start of picture text -----**<br>
2.2 N ee 120 Y IM LATIN TMEET<br>2.0 100<br>S IN H S a<br>1.8 ID = -250µA 80<br>ss<br>1.6 Pe E PTeTINeNee 60 PR ENIn aCTIANN TIT<br>1.4 40<br>H ANS O NG<br>1.2 20<br>S EEEEEEE P ARE<br>1.0 PF | | tT tT | | 0 PT IPIN, PoS<br>-75 -50 -25 0 25 50 75 100 125 150 0.001 0.010 0.100 1.000 10.000 100.000<br>TJ , Temperature ( °C ) Time (sec)<br>-VGS(th) Gate Threshold Voltage(V)<br>Power (W)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Vgs(th)  Vs. Junction Temperature 

**Fig 16** Typical Power Vs. Time 

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## **SO-8 Package Outline** 

Dimensions are shown in millimeters (inches) 

**==> picture [343 x 232] intentionally omitted <==**

**----- Start of picture text -----**<br>
INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>- eee b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>j 6 ae H a D .189 .1968 4.80 5.00<br>E<br>0.25 [.010]  A ———— E .1497 .1574 3.80 4.00<br>| 1 2 3 4 [|er—ars] oe e .050  BASIC 1.27  BASIC<br>1 ee<br>-——— {— e1 .025  BASIC 0.635  BASIC<br>H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e<br>oH pt L .016 .050 0.40 1.27<br>y  0°  8°  0°  8°<br>fr [ff ff<br>e1 K x 45°<br>A<br>4 -O C yh<br>y<br>0.10 [.004]<br>dhe 8X b v A1 o X L 8X L 8X c i<br>0.25 [.010]  C A B 7<br>fe} J TT]<br>FOOTPRINT<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>**----- End of picture text -----**<br>


NOTES: 

1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 

2.  CONTROLLING DIMENSION: MILLIMETER 

3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 

4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 

- 5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 

**==> picture [34 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
6.46 [.255]<br>**----- End of picture text -----**<br>


- 7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 

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**----- Start of picture text -----**<br>
3X 1.27 [.050]<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## **SO-8 Part Marking** 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

XXXX INTERNATIONAL F7101 RECTIFIER LOGO ~~m~~ e 

## DATE CODE (YWW) 

P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y =  LAST DIGIT OF THE YEAR 

WW =  WEEK LOT CODE 

- A =  ASSEMBLY SITE CODE 

PART NUMBER 

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## **SO-8 Tape and Reel** 

Dimensions are shown in millimeters (inches) 

**==> picture [192 x 125] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>Oo O © ©<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) | FEED DIRECTION<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

**==> picture [170 x 75] intentionally omitted <==**

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 330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/04 

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