# Power MOSFET, P Channel, 12 V, 11.5 A, 0.014 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2777391/)

**URL**: https://novapart.co/products/IRF7420TRPBF/power-mosfet-p-channel-12-v-115-a-0014-ohm-soic
**SKU**: IRF7420TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3980
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | HEXFET |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | P Channel |
| Power Dissipation Pd | 2.5W |
| Rds(On) Test Voltage | 4.5V |
| On Resistance Rds(On) | 0.014ohm |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 12V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 11.5A |
| Drain Source On State Resistance | 0.014ohm |
| Gate Source Threshold Voltage Max | 900mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2777391/)

## PD - 956330 IRF7420PbF 

HEXFET Power MOSFET 

Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free 

|**VDSS**<br>**-12V**|**RDS(on) max**|**ID**<br>-11.5A<br>-9.8A<br>-8.1A|
|---|---|---|
||**DS(on)**<br>14mΩ@VGS= -4.5V||
||17.5mΩ@VGS= -2.5V||
||26mΩ@VGS= -1.8V||



## **Description** 

These P-Channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.  This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. 

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.  With these improvements, multiple devices can be used in an application with dramatically reduced board space.  The package is designed for vapor phase, infrared, or wave soldering technique 

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A<br>S 1 8 D<br>S 2 7 D<br>S 3 6 D<br>G 4 5 D<br>SO-8<br>Top View<br>**----- End of picture text -----**<br>


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Parameter Max. Units<br>rs<br>RG VDS Drain- Source Voltage -12 V<br>ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -11.5<br>es<br>ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -9.2 A<br>re IDM Pulsed Drain Current  -46<br>Rs PD @TA = 25°C © Power Dissipation  © OY 2.5<br>OO PD @TA = 70°C Power Dissipation  1.6<br>Linear Derating Factor 20 mW/°C<br>Re<br>VGS Gate-to-Source Voltage  ±8 V<br>Re<br>Reef TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C<br>**----- End of picture text -----**<br>


## **Thermal Resistance** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|RθJA|Maximum Junction-to-Ambient|50|°C/W|



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8/25/06 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~es~~<br>~~Ps~~|**Parameter**<br>~~ss~~<br>~~GG~~|**Min.**<br>~~ss~~<br>~~GG~~|**Typ. **<br>~~GG~~|**Max. **<br>~~Os~~<br>~~GG~~|**Units**<br>~~GG~~|**Conditions**<br>~~GG~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~es~~<br>~~Ps~~<br>~~Re~~|Drain-to-Source Breakdown Voltage<br>~~ss~~<br>~~GG~~<br>~~GQ~~|-12<br>~~ss~~<br>~~GG~~<br>~~GQ~~|–––<br>~~GG~~<br>~~GQ~~|–––<br>~~Os~~<br>~~GG~~<br>~~GQ~~|V<br>~~GG~~<br>~~GQ~~|VGS= 0V, ID= -250µA<br>~~GG~~<br>~~GQ~~|
|∆V(BR)DSS/∆TJ<br>~~Ps~~<br>~~Re~~|Breakdown Voltage Temp. Coefficient<br>~~GG~~<br>~~GQ~~|––– <br>~~GG~~<br>~~GQ~~<br>~~**|**~~|0.007 <br>~~GG~~<br>~~GQ~~<br>~~**|**~~|–––<br>~~GG~~<br>~~GQ~~<br>|V/°C<br>~~GG~~<br>~~GQ~~|Reference to 25°C, ID= -1mA<br>~~GG~~<br>~~GQ~~|
|RDS(on)<br>~~Re~~<br>~~es~~|Static Drain-to-Source On-Resistance<br>~~GQ~~<br>|–––<br>~~GQ~~<br>~~**|**~~|–––<br>~~GQ~~<br>~~**|**~~|14<br>~~GQ~~<br>|mΩ<br>~~GQ~~<br>|VGS= -4.5V, ID= -11.5A<br>~~GQ~~|
|||~~**|**~~||<br>~~|~~<br>|–––<br>~~**|**~~||<br>~~|~~<br>|17.5<br>||<br>||VGS= -2.5V, ID= -9.8A<br>|
|||~~|~~<br>|–––<br>~~|~~<br>|26<br>||VGS= -1.8V, ID= -8.1A<br>|
|VGS(th)<br>~~es~~<br>~~Ps~~|Gate Threshold Voltage<br>~~**GG**~~<br>|-0.4<br>~~|~~<br>~~**GG**~~<br>|–––<br>~~|~~<br>~~**GG**~~<br>|-0.9<br>~~**GG**~~<br>|V<br>~~**GG**~~<br>|VDS= VGS, ID= -250µA<br>~~**GG**~~<br>|
|gfs<br>~~es~~<br>~~Ps~~|Forward Transconductance<br>~~**GG**~~<br><br>~~|~~|32<br>~~|~~<br>~~**GG**~~<br><br>~~|~~|–––<br>~~|~~<br>~~**GG**~~<br>|–––<br>~~**GG**~~<br>|S<br>~~**GG**~~<br><br>~~E~~|VDS= -10V, ID= -11.5A<br>~~**GG**~~<br><br>~~E~~|
|IDSS<br><br>~~Ps|~~<br>~~———_~~|Drain-to-Source Leakage Current<br>~~**GG**~~<br>~~|~~<br>~~|~~<br>~~———_~~|–––<br>~~**GG**~~<br>~~|~~<br>~~|~~|–––<br>~~**GG**~~<br>~~|~~|-1.0<br>~~**GG**~~<br>~~|~~|µA<br>~~**GG**~~<br>~~|~~<br>~~E~~|VDS= -9.6V, VGS= 0V<br>~~**GG**~~<br>~~|~~<br>~~E~~|
|||–––<br>~~|~~<br>~~|~~<br>~~**|**~~<br>|–––<br>~~|~~<br>|-25<br>~~|~~||VDS= -9.6V, VGS= 0V, TJ= 70°C<br>~~|~~<br>~~E~~|
|IGSS<br>~~———_~~<br>~~a~~|Gate-to-Source Forward Leakage<br>~~|~~<br>~~———_~~|–––<br>~~|~~<br>~~**|**~~<br><br>~~ee~~|–––<br>|-100|nA<br>~~E~~|VGS= -8V<br>~~E~~|
||Gate-to-Source Reverse Leakage<br>~~———_ee~~|–––<br>~~**|**~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|100||VGS= 8V|
|Qg<br>~~———_~~<br>~~a~~~~**ee**~~|Total Gate Charge<br>~~———_~~|–––<br>~~**|**~~<br><br>~~ee~~|38<br>|–––|nC|ID= -11.5A<br>VDS= -6V<br>VGS= -4.5V<br>~~®~~|
|Qgs<br>~~a~~~~**ee**~~|Gate-to-Source Charge|–––<br>~~ee~~|8.1|–––|||
|Qgd<br>~~**ee**~~<br>~~es~~|Gate-to-Drain("Miller")Charge|–––|8.7|–––|||
|td(on)<br>~~**ee**~~<br>~~es~~<br>es|Turn-On Delay Time|–––|8.8|13|ns|VDD= -6V, VGS= -4.5V<br>ID= -1.0A<br>RD= 6Ω<br>RG= 6Ω<br>~~®~~<br>~~®~~|
|tr<br>~~es~~<br>es<br>ee|Rise Time<br>~~ee~~|–––<br>~~ee~~|8.8<br>~~ee~~|13|||
|td(off)<br>es<br>ee<br>~~ee~~|Turn-Off Delay Time<br>~~ee~~|–––<br>~~ee~~|291<br>~~ee~~|437|||
|tf<br>ee<br>~~ee~~<br>~~Se~~|Fall Time<br>~~ee~~|–––<br>~~ee~~|225<br>~~ee~~|338|||
|Ciss<br>~~ee~~<br>~~Se~~<br>es|Input Capacitance|–––|3529|–––|pF|VGS= 0V<br>VDS= -10V<br>ƒ = 1.0MHz<br>~~®~~|
|Coss<br>~~Se~~<br>es<br>ee|Output Capacitance<br>~~en~~|–––<br>~~en~~|1013<br>~~en~~|–––<br>~~en~~|||
|Crss<br>~~Se~~<br>es<br>ee|Reverse Transfer Capacitance<br>~~en~~|–––<br>~~en~~|656<br>~~en~~|–––<br>~~en~~|||



## **Source-Drain Ratings and Characteristics** 

|aes|**Parameter**<br>es|**Min.**<br>es<br>~~ss~~|**Typ. **<br>es<br>~~ss~~|**Max.**<br>es|**Units**<br>es|**Conditions**<br>es|
|---|---|---|---|---|---|---|
|IS|Continuous Source Current<br>(Body Diode)|~~ss~~|~~ss~~|2.5|~~oe~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>S<br>D<br>G<br>~~oe~~|
|ISM<br>~~a~~|Pulsed Source Current<br>(BodyDiode)<br>~~rs~~|~~oe~~|~~oe~~|46<br>~~oe~~|||
|VSD<br>~~a~~|Diode Forward Voltage<br>~~rs~~|–––<br>~~oe~~|–––<br>~~oe~~|-1.2<br>~~oe~~|V<br>~~oe~~|TJ= 25°C, IS= -2.5A, VGS= 0V<br>~~oe~~|
|trr<br>~~a~~<br>~~el~~<br>~~a~~|Reverse Recovery Time<br>~~rs~~<br>~~el~~<br>~~ee~~|–––<br>~~oe~~<br>~~el~~<br>~~ee~~|62<br>~~oe~~<br>~~el~~<br>ee|93<br>~~oe~~<br>~~el~~|ns<br>~~oe~~<br>~~el~~|TJ= 25°C, IF= -2.5A<br>di/dt = -100A/µs<br>~~oe~~<br>~~el~~<br>@|
|Qrr<br>~~el~~<br>~~a~~|Reverse Recovery Charge<br>~~el~~<br>~~ee~~|–––<br>~~el~~<br>~~ee~~|61<br>~~el~~<br>ee|92<br>~~el~~|µC<br>~~el~~||



0) Repetitive rating;  pulse width limited by max. junction temperature. 

Surface mounted on 1 in square Cu board, t ≤ 10sec. 

Pulse width ≤ 400µs; duty cycle ≤ 

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100 100<br>VGS VGS<br>TOP           -7.0V TOP           -7.0V<br>                  -5.0V                   -5.0V<br>SP 7iileeeeentl                   -4.5V | Ae                   -4.5V |<br>                  -2.5V                   -2.5V<br>10 Zen                   -1.8V | fa                   -1.8V |<br>                  -1.5V 10 -1.5V<br>                  -1.2V                   -1.2V<br>eS BOTTOM   -1.0V Zea eect BOTTOM   -1.0V<br>1 a ee ee eellll| CA<br>1<br>ZACH AH ZAR -1.0V<br>0.1 ee -1.0V ll Pe EH<br>20µs PULSE WIDTH<br>AA 20µs PULSE WIDTH mal Tj = 150°C<br>Tj = 25°C<br>0.01 ane AHH oft ene Ea r a l 0.1 AgZ n i otlljill<br>0.1 1 10 100 0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>2.0<br> 100 ID = -11.5A<br>ee ee ee ee 1.5<br> 10 a T  = 150  CJ ° 4 ALLELE<br>Pf ft pra T |<br>== 4S SS 1.0 Lee<br>°<br>a 4 T  = 25  CJ TTT LEE<br> 1<br>N ee ee 0.5 TIT tiNntntill<br>SS === =<br>oe PEELE<br>V      = -10VDS<br>0.1 erTePTee 20µs PULSE WIDTH 0.0 EEL E EE VGS = -4.5V<br>0.5 1.0 1.5 2.0 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>-V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>D<br>-I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>-ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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5500 VGS   = 0V,     f = 1 MHZ 6 ID = -11.5A V DS=-9.6V<br>5000 = Ciss   = Cgs + Cgd, Cds  SHORTED BocEe V DS=-6V E A<br>5<br>4500 C   = C<br>rss   gd<br>4000 Se Coss   = Cds + Cgd scec ee ey<br>eee Ciss 4 2<br>3500<br>en eee e<br>3000 ee ll 3 ft| | |r Wymmr<br>ee EL<br>2500<br>ee ell TT OTA AT OTT<br>2000 ell ee<br>Coss 2<br>1500 ee 4<br>1000 Crss 1<br>BTee eel TfAnnee<br>500<br>0 ell 0 7VititrrereitFEfy<br>0 10 20 30 40 50<br>1 10 100<br>Q   , Total Gate Charge (nC)G<br>-VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100  1000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>a te ea oo<br> 10 Beem 2760  100 ell<br>T  = 150  CJ °<br>100us<br>ee T  = 25  CJ ° Se et 1ms<br> 1  10<br>pi if | ee<br>ee ee pta ee l<br>10ms<br>a Sanaa  T TCJ = 25  C= 150  C° ° cmetiii cmmmaii<br>0.1 eePITAL a U/L | | | V      = 0 V GS  1 p  Single Pulse f WE LAI fs ELT<br>0.2 0.4 0.6 0.8 1.0 1.2 0.1  1  10  100<br>-V     ,Source-to-Drain Voltage (V)SD -V     , Drain-to-Source Voltage (V)DS<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D-<br>SD<br>-I     , Reverse Drain Current (A)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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12 SE EEE Vos pan<br>~ D.U.T.<br>9 PEAKE LLL ELL Yes<br>-<br>INQ Re<br>+<br>ERS AL Voo<br>6 PEE EL LN EL Ves ≤ 1<br>uty Factor ≤ 0.1 %<br>POSENN smi<br>3 PEE EEL EEN, Fig 10a.   Switching Time Test Circuit '|<br>POPE td(on) tr td(off) tf<br>VGS<br>0 10%<br>25 50 75 100 125 150<br>T   , Case TemperatureC (  C)°<br>|<br>90%<br>Fig 9.   PE Maximum Drain Current Vs. t tt LE ft VDS st a- i<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 100<br>EEFEEE<br>D = 0.50<br>BT TTemEE lHttt Tit<br>ese<br> 10 0.20<br>0.10<br>0.05<br>Ee SE ee EET ee<br>STO ee See PDM<br>0.02<br> 1 ee ee<br>0.01 t1<br>a ee ee ee eee eee t2<br>e e<br>Notes:<br>11 SINGLE PULSE a | ee 1. Duty factor D = t   / t1 2<br>0.1 wail (THERMAL RESPONSE) eee THANUn TC 2. Peak TJ = P DM x  ZthJA + TA<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>D<br>-I   , Drain Current (A)<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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0.025<br>a 0.08<br>0.020<br>0.06<br>on<br>V = -1.8V<br>0.015 GS<br>ID = -11.5A 0.04<br>0.010 eee y VGS = -2.5V<br>0.02<br>os — —<br>0.005 VGS = -4.5V<br>0.0 2.0 4.0 6.0 8.0 0<br>0.0 10.0 20.0 30.0 40.0 50.0<br>-VGS, Gate -to -Source Voltage  (V)<br>-ID , Drain Current ( A )<br>)<br>ΩRDS(on),  Drain-to -Source On Resistance ( )Ω RDS ( on ) , Drain-to-Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 12.** Typical On-Resistance Vs. Gate Voltage 

**Fig 13.** Typical On-Resistance Vs. Drain Current 

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QG<br>a<br>QGS QGD<br>VG<br>Charge<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>-<br>THe) D.U.T. +VDS<br>VGS<br>-3mA<br>Ont.<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 14a.** Basic Gate Charge Waveform 

**Fig 14b.** Gate Charge Test Circuit 

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1.0 400<br>0.9 PF] ff fof fo td 350 aNCEAeeCI aTEI EETeT aCTI TTT|<br>0.8 300<br>pti tt ttt BaN00a<br>0.7 NER 250 NOT OT<br>~w ID = -250µA NCATE ETHIE -CLEE EFTTA EEE UTI<br>0.6 Py} 200 A ee a<br>0.5 Pt TINE]tT ETN EELEyN\ 150 aFEELa aCLI CCCA EL<br>0.4 CPA 100 CCHIT<br>0.30.2 Pt| || || tft || ftPINGdots\ 500 PATATIENTaANGIEaETT eeTETTTT TTTaECT PETTTT<br>-75 -50 -25 0 25 50 75 100 125 150 0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000<br>TJ , Temperature ( °C ) Time (sec)<br>-VGS(th) ( V ) Power (W)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Vgs(th) Vs. Junction Temperature 

**Fig 16** Typical Power Vs. Time 

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## SO-8  Package Outline 

Dimensions are shown in milimeters (inches) 

## SO-8 Part Marking Information (Lead-Free) 

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## SO-8 Tape and Reel 

Dimensions are shown in milimeters (inches) 

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TERMINAL NUMBER 1<br>OO © ©<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) _ FEED DIRECTION<br>**----- End of picture text -----**<br>


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NOTES:<br>**----- End of picture text -----**<br>


1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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 330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/2006 

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- [Supplier page](https://es.farnell.com/en-ES/infineon/irf7420trpbf/mosfet-p-ch-12v-11-5a-soic/dp/2777391)
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