# Power MOSFET, P Channel, 30 V, 10 A, 0.02 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:3132245/)

**URL**: https://novapart.co/products/IRF7416TRPBF/power-mosfet-p-channel-30-v-10-a-002-ohm-soic
**SKU**: IRF7416TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3440
**Stock**: 1000+
**Lead Time**: 120 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-10A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.04V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | HexFET |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 10A |
| Drain Source On State Resistance | 0.02ohm |
| Gate Source Threshold Voltage Max | 2.04V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3132245/)

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A<br>S 1 8 D<br>S 2 7 D Vpss = -30V<br>S 3 6 D<br>G 4 5 D Rpsvon) _= 0.02 Ω<br>Top View<br>SO-8<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TA= 25°C|Continuous Drain Current, VGS@ -10V|-10|A|
|ID@ TA= 70°C|Continuous Drain Current, VGS@ -10V|-7.1||
|IDM|Pulsed Drain Current|-45||
|PD@TA= 25°C|Power Dissipation|2.5<br>~~C~~|W<br>~~(~~|
||Linear Derating Factor<br>~~a~~|0.02<br>~~a~~<br>~~C~~|W/°C<br>~~a~~<br>~~(~~|
|VGS<br>~~a~~|Linear Derating Factor<br>Gate-to-Source Voltage<br>~~a~~|± 20<br>~~C~~|V<br>~~(~~|
|EAS<br>~~a~~<br>~~a~~|Single Pulse Avalanche Energy<br>~~a~~<br>~~a~~|370|mJ|
|dv/dt<br>~~a~~<br>~~a~~|Peak Diode Recovery dv/dt<br>~~a~~<br>~~a~~<br>~~eG~~|-5.0<br>~~eG~~|V/ns<br>~~eG~~|
|TJ<br>TSTG<br>~~a~~|Operating Junction and<br>Storage Temperature Range<br>~~a~~<br>~~eG~~|-55  to + 150<br>~~eG~~|°C<br>~~eG~~|



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## **Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**|
|---|
|V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>-30<br>–––<br>–––<br>V<br>ΔV(BR)DSS/ΔTJBreakdown Voltage Temp. Coefficient<br>–––<br>-0.024<br>–––<br>V/°C<br>–––<br>–––<br>0.020<br>–––<br>–––<br>0.035<br>VGS(th)<br>Gate Threshold Voltage<br>-1.0<br>–––<br>-2.04<br>V<br>gfs<br>Forward Transconductance<br>5.6<br>–––<br>–––<br>S<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>-1.0<br>–––<br>–––<br>-25<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>-100<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>100<br>VDS= VGS, ID= -250μA<br>VDS= -10V, ID= -2.8A<br>VGS= -20V<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>Ω<br>VGS= -4.5V,ID= -2.8A<br>VGS= 0V, ID= -250μA<br>Reference to 25°C, ID= -1mA<br>VGS= -10V, ID= -5.6A<br>nA<br>μA<br>VDS= -24V, VGS= 0V<br>VDS= -24V, VGS= 0V, TJ= 125°C<br>VGS= 20V<br>~~po~~<br>~~ss~~<br>~~SN~~<br>~~ee~~<br>~~||~~<br>~~es~~<br>~~QO~~<br>~~es~~<br>~~sD~~<br>~~a~~<br>~~———~~<br>~~esee~~<br>~~py~~<br>~~a~~<br>~~GO~~|
|**Dynamic  Electrical Characteristics @ TJ = 25°C(unless otherwise specified)**|
|**Parameter**<br>**Min. Typ. Max. Units**<br>Qg<br>Total Gate Charge<br>–––<br>61<br>92<br>Qgs<br>Gate-to-Source Charge<br>–––<br>8.0<br>12<br>Qgd<br>Gate-to-Drain("Miller")Charge<br>–––<br>22<br>32<br>td(on)<br>Turn-On DelayTime<br>–––<br>18<br>–––<br>tr<br>Rise Time<br>–––<br>49<br>–––<br>td(off)<br>Turn-Off DelayTime<br>–––<br>59<br>–––<br>tf<br>Fall Time<br>–––<br>60<br>–––<br>Ciss<br>Input Capacitance<br>–––<br>1700<br>–––<br>Coss<br>Output Capacitance<br>–––<br>890<br>–––<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>410<br>–––<br>**Conditions**<br>ID= -5.6A<br>pF<br>ns<br>nC<br>VDS= -25V<br>ƒ= 1.0MHz, See Fig. 5<br>VGS= -10V, See Fig. 6 & 9<br>VDS= -24V<br>VDD= -15V<br>ID= -5.6A<br>RG= 6.2Ω<br>RD= 2.7Ω, See Fig. 10<br>VGS= 0V<br>~~a~~<br>~~ss~~<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~es ee~~<br>~~a~~<br>~~@~~<br>~~ee~~<br>~~es es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~®~~<br>~~ee~~<br>~~ee~~<br>~~es ee~~<br>~~ee~~<br>~~es~~|



## **Diode Characteristics** 

|~~a~~|**Parameter**<br>~~a~~<br>~~**e**e~~|**Min. **<br>~~QO~~|**Typ. **<br>~~QOQO~~|**Max. **<br>~~QO~~|**Units**<br>~~QO~~|**Conditions**<br>~~QO~~|
|---|---|---|---|---|---|---|
|IS|Continuous Source Current<br>(BodyDiode)<br>~~**e**e~~|–––|–––|-3.1|A|S<br>D<br>G<br>integral reverse<br>p-njunction diode.<br>MOSFET symbol<br>showing  the|
|ISM|Pulsed Source Current<br>(BodyDiode)<br>~~**e**e~~|–––|–––|-45|||
|VSD|Diode Forward Voltage<br>~~**e**e~~|–––|–––<br>~~s~~|-1.0<br>~~s~~|V<br>~~s~~|TJ= 25°C, IS= -5.6A, VGS= 0V<br>~~s~~<br>~~(S~~|
|trr|Reverse RecoveryTime<br>~~**e**~~<br>~~s~~|–––<br>~~**e**~~<br>~~es~~|56<br>~~**e**e~~<br>~~ee~~|85<br>~~e~~|ns<br>~~e~~|TJ= 25°C,IF= -5.6A<br>di/dt = 100A/μs<br>~~e~~<br>~~°~~|
|Qrr|Reverse RecoveryCharge<br>~~**e**~~<br>~~s~~|–––<br>~~**e**~~<br>~~es~~|99<br>~~**e**e~~<br>~~ee~~|150<br>~~e~~|nC<br>~~e~~||



ISD ≤ ≤ ≤ max. junction temperature. ( See fig. 11 ) T, ≤ 150°C ® Starting Ty = 25°C, L = 25mH @® Pulse width ≤ 300ys; duty cycle ≤ 2%. Ω Re = 29 las = -8.6A. (See Figure 12) @® Surface mounted on FR-4 board, t ≤ 

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100 Vest<br> TOP         - 15V ee<br>                 - 10V                 - 7.0V A<br>                 - 5.5V ee ee ee<br>- 4.5V<br>                 - 4.0V pny<br>- 3.5V<br> BOTTOM - 3.0V KM<br>fhE-— ‘i<br>10 Mornl<br>(LLL Se<br>S/ ff 777i iit | | i ttt<br>ZS een eee eee<br>Uf  -3.0V<br>A errr TT<br> T   = 25°CJ<br>1<br>0.1 Paliilll 1 aoe 10<br>-V     , Drain-to-Source Voltage (V)DS<br>Fig 1. Typical Output Characteristics<br>100<br>a ee ee ee ee ee eee<br>afta CSCC<br>a a<br>T  = 25°CJ<br>fta er<br>| Ar T  = 150°CJ ae<br>10 Pya 7 ee<br>| fy | | | | ~ | JT | |<br>Jf/—}-}-Pp| | | [| tf | Jf ff<br> V     = -10VDS<br>1 PL ppp<br>| sueruse more<br>3.0 3.5 4.0 4.5 5.0 5.5<br>-V     , Gate-to-Source Voltage (V)GS<br>D<br>-I   , Drain-to-Source Current (A)<br>D<br>-I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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100<br>Vest<br> TOP         - 15V ee<br>                 - 10V<br>                 - 7.0V ee<br>                 - 5.5V - 4.5V ee<br>                 - 4.0V ee ee<br>- 3.5V<br> BOTTOM - 3.0V man) eel<br>ia Za<br>10 bfME.<br>) SL ff 7<br>OiIIS/ 2000 een ee ee<br>Yael  -3.0V<br>Sia LTT<br>VAP ee<br> T   = 150°CJ<br>1<br>0.1 77 LTT rs 1 10<br>-V     , Drain-to-Source Voltage (V)DS<br>Fig 2. Typical Output Characteristics<br>2.0 P LE<br>1.5<br>PLETE ee<br>aera<br>CLE Eee<br>1.0 An Pa An |<br>jYT<br>a<br>0.5<br>TEE EEE EEE<br>0.0 SEER EE<br>PPE EE ov<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T   , Junction Temperature (°C)J<br>D<br>-I   , Drain-to-Source Current (A)<br>(Normalized)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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4000<br>V      = 0V,         f = 1MHzGS<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds<br>C      = C rss         gd<br>C      = C     + Coss        ds         gd<br>3000<br>a Sa<br>ug<br>ST oil<br>s<br>PNA TTT<br>2000 ss<br>a J<br>ee al l l<br>1000 ss l<br>SST<br>0 Coors<br>1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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100 ————————<br>aa A<br>eere eeee Aeee aeeee<br>4a T  = 150°CJ Ae<br>10 ils |<br>T  = 25°CJ<br>ey 2 ee 2<br>ey 2 ee 2 ee ee<br>ae ee<br>1<br>Pe | TI | ew<br>0.4 0.6 0.8 1.0 1.2<br>-V     , Source-to-Drain Voltage (V)SD<br>SD<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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20<br> I    = -5.6AD<br>16  V      = -15VDS<br>pf<br>1,<br>12 HEHEHE Y<br>8 BRR<br>P| TA<br>ft YF|<br>4<br>aap @nnnne<br>[etna     SEE FIGURE 9<br>0<br>0 20 40 60 80 100<br>Q   , Total Gate Charge (nC)G<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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 100<br>OPERATION IN THIS AREA LIMITED<br>neers=7 , BY RDS( ss on) CoH<br>P= FEE aii oe<br>cia ie l 100us l<br>0 |<br> 10 UML SMI Ell<br>1ms<br>a TT<br>a lll<br> T  TAJ = 25  C = 150  C ° ° 10ms<br>I  Single Pulse TT |<br> 1<br>0.1 LL  1 IN  10  100 Lv<br>-V     , Drain-to-Source Voltage (V)DS<br>I   , Drain Current (A) D-<br>**----- End of picture text -----**<br>


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a QG "I Ves D.U.T.<br>40V<br>QGS QGD -<br>So Re + Von<br>VG )* -40V<br>Pulse Width ≤ 1  ys<br>Charge . Duty Factor ≤ 0.1 %<br>Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit<br>Current Regulator<br>Same Type as D.U.T.<br>50K Ω td(on) tr td(off) tf<br>12V .2 μ F VGS<br>.3 μ F 10%<br>a ee D.U.T. +-VDS i ans<br>VGS<br>90%<br>-3mA<br>VDS<br>Oo  ; IG ID | K/\<br>Current Sampling Resistors<br>Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms<br> 100<br>D = 0.50<br>ee ii ean<br>sa ae aa ee ee<br>0.20<br> 10<br>0.10<br>= SSray<br>0.05 a ceee<br>eeirmarti 0.02 2. PDM<br> 1<br>0.01 t1<br>Set (THERMAL RESPONSE)SINGLE PULSE t2<br>Notes:<br>1. Duty factor D = t   / t 1 2<br>coi 2. Peak TJ = P DM x  ZthJA + TA<br>0.1 oie no<br>0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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VDS L<br>RG D.U.T 1. VDD<br>IAS<br>a -20V tl DRIVER<br>b oot tp 0.01 Ω 2<br>15V<br>12a. Unclamped Inductive Test Circuit<br>IAS<br>S|<br>\ |<br>\<br>¢— tp<br>V(BR)DSS<br>**----- End of picture text -----**<br>


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1000<br>ID<br>TOP -2.5A<br>-4.5A<br>800 BOTTOM -5.6A<br>Po<br>Gannann<br>600 Nae<br>AP | |<br>PN pp<br>400 NE NG ee<br>ANON<br>200 PPt.SSAASANT<br>PS<br>0<br>25 50 75 100 125 150<br>Starting T  , Junction Temperature ( C)J o<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>Kk<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Isp controlled by Duty Factor "D" -<br>‘ © •   D.U.T. - Device Under Test<br>* Reverse Polarity for P-Channel<br>** Use P-Channel Driver for P-Channel Measurements<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. n d Period _ t<br>[<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current i Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \ F<br>[,<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>a<br>Ripple  ≤ 5% ]<br>**----- End of picture text -----**<br>


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## **SO-8 Package Outline** 

Dimensions are shown in millimeters (inches) 

**==> picture [354 x 338] intentionally omitted <==**

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INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>- eeea b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>jae 6 H a D .189 .1968 4.80 5.00<br>E<br>0.25 [.010]  A E .1497 .1574 3.80 4.00<br>= 1 2 3 4 == e .050  BASIC 1.27  BASIC<br>1 ee<br>-——— {— e1 .025  BASIC 0.635  BASIC<br>H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e<br>Hh ca L .016 .050 0.40 1.27<br>a y  0°  8°  0°  8°<br>e1 K x 45°<br>A<br>aro C qe<br>y<br>0.10 [.004]<br>d h e 8X b iver A1 m ae XS 8X L 8X c of<br>© 0.25 [.010]  ®@ C A B 7<br>FOOTPRINT<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER<br>n a e<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>a n<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>6.46 [.255]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>| ii kd<br>uu u<br>3X 1.27 [.050] a _ i<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br>


NOTES: 

1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 

2.  CONTROLLING DIMENSION: MILLIMETER 

3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 

4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 

- 5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 

- 7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 

## **SO-8 Part Marking** 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

XXXX INTERNATIONAL F7101 RECTIFIER LOGO ~~me~~ 

DATE CODE (YWW) 

- P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) 

- Y =  LAST DIGIT OF THE YEAR WW =  WEEK A =  ASSEMBLY SITE CODE LOT CODE 

PART NUMBER 

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## **SO-8 Tape and Reel** 

Dimensions are shown in millimeters (inches) 

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TERMINAL NUMBER 1<br>Oooo ©<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) | FEED DIRECTION<br>|  330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


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NOTES:<br>**----- End of picture text -----**<br>


1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 06/2011 

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## Links

- [View this product on Novapart](https://novapart.co/products/IRF7416TRPBF/power-mosfet-p-channel-30-v-10-a-002-ohm-soic)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf7416trpbf/mosfet-p-ch-30v-10a-soic/dp/3132245)
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