# Power MOSFET, N Channel, 30 V, 13 A, 0.01 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2468020RL/)

**URL**: https://novapart.co/products/IRF7413ZTRPBF/power-mosfet-n-channel-30-v-13-a-001-ohm-soic
**SKU**: IRF7413ZTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2500
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (17-Jan-2023) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 13A |
| Drain Source On State Resistance | 0.01ohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2468020RL/)

## IRF7413ZPbF 

## HEXFET Power MOSFET 

## **Applications** 

Control FET for Notebook Processor Power 

Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Networking and Telecommunication Systems 

## **Benefits** 

Ultra-Low Gate Impedance 

Very Low RDS(on) Fully Characterized Avalanche Voltage and Current 

|**VDSS**|**RDS(on) max**|**ID**|
|---|---|---|
|**30V**|**10m @VGS = 10V**|**13A**|



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100% Tested for RG Lead-Free 

## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-to-Source Voltage<br>~~a~~|30<br>~~a~~|V|
|VGS|Gate-to-Source Voltage<br>~~Ee~~|± 20<br>~~Ee~~||
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V<br>~~Ee~~<br>~~a~~<br>~~oo~~|13<br>~~Ee~~<br>~~a~~<br>~~oo~~|A<br>~~oo~~<br>~~see~~|
|ID@ TA= 70°C|Continuous Drain Current, VGS@ 10V<br>~~ee~~<br>~~oo~~|10<br>~~ee~~<br>~~oo~~||
|IDM<br>~~a~~|Pulsed Drain Current<br>~~oo~~<br>~~asee~~|100<br>~~oo~~<br>~~see~~||
|PD@TA= 25°C<br>~~a~~|Power Dissipation<br>~~oo~~<br>~~asee~~|2.5<br>~~oo~~<br>~~see~~|W<br>~~oo~~<br>~~see~~|
|PD@TA= 70°C<br>~~a~~|Power Dissipation<br>~~asee~~|1.6<br>~~see~~||
||Linear Derating Factor<br>~~see~~<br>~~Se~~|0.02<br>~~see~~<br>~~Se~~|W/°C<br>~~see~~<br>~~Se~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~Se~~|-55  to + 150<br>~~Se~~|°C<br>~~Se~~|



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJL|Junction-to-Drain Lead|–––|20|°C/W|
|RθJA|Junction-to-Ambient<br>~~a~~|–––|50||



> Notes ® through ® are on page 10 www.irf.com 

1 

05/08/08 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~en~~|**Typ.**|**Max. **<br>~~CO~~|**Units**<br>~~CO~~|**Conditions**<br>~~CO~~|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~es~~|30<br>~~es~~<br>~~en~~|–––<br>~~es~~|–––<br>~~es~~<br>~~CO~~|V<br>~~es~~<br>~~CO~~|VGS= 0V, ID= 250µA<br>~~es~~<br>~~CO~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~pt~~<br>|–––<br>~~en~~<br>~~pt~~<br>|0.025<br>~~pt~~<br>|–––<br>~~CO~~<br>~~pt~~<br>|V/°C<br>~~CO~~<br>~~pt~~<br>|Reference to 25°C, ID= 1mA<br>~~CO~~<br>~~pt~~<br>~~—~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~pt~~<br>~~|~~|–––<br>~~pt~~<br>~~|~~|8.0<br>~~pt~~<br>~~|~~|10<br>~~pt~~<br>~~|~~|mΩ<br>~~pt~~<br>~~|~~|VGS= 10V, ID= 13A<br>~~pt~~<br>~~|—~~|
|||–––<br>~~|~~|10.5<br>~~|~~|13<br>~~|~~||VGS= 4.5V, ID= 10A<br>~~|—~~|
|VGS(th)|Gate Threshold Voltage<br><br>~~ff~~|1.35<br><br>~~ff~~|1.80<br><br>~~ff~~|2.25<br><br>~~ff~~|V<br><br>~~ff~~|VDS= VGS, ID= 25µA<br>~~—~~<br>~~ff~~<br>~~ee~~|
|∆VGS(th)/∆TJ|Gate Threshold Voltage Coefficient<br>~~ff~~|–––<br>~~ff~~<br>~~**|**~~<br>~~ee ee~~|-5.0<br>~~ff~~<br>~~**|**~~<br>~~ee~~|–––<br>~~ff~~<br>~~ee~~|mV/°C<br>~~ff~~<br>~~ee~~||
|IDSS|Drain-to-Source Leakage Current<br>~~ff~~<br>~~ee~~|–––<br>~~ff~~<br>~~**|**~~<br>~~ee~~<br>~~ee ee~~|–––<br>~~ff~~<br>~~**|**~~<br>~~ee~~<br>~~ee~~|1.0<br>~~ff~~<br>~~ee~~<br>~~ee~~|µA<br>~~ff~~<br>~~ee~~<br>~~ee~~|VDS= 24V, VGS= 0V<br>~~ff~~<br>~~ee~~<br>~~ee~~|
|||–––<br>~~**|**~~<br>~~ee~~<br>~~ee ee~~|–––<br>~~**|**~~<br>~~ee~~<br>~~ee~~|150<br>~~ee~~<br>~~ee~~||VDS= 24V, VGS= 0V, TJ= 125°C<br>~~ee~~<br>~~ee~~|
|IGSS<br>~~a~~|Gate-to-Source Forward Leakage<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~ee ee~~<br>~~a~~|–––<br>~~ee~~<br>~~ee~~<br>~~a~~|100<br>~~ee~~<br>~~ee~~<br>~~a~~|nA<br>~~ee~~<br>~~ee ~~<br>~~a~~<br>~~(~~|VGS= 20V<br>~~ee~~<br> ~~ee~~<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~<br>~~rd~~<br>|–––<br>~~a~~<br>~~ee~~<br><br>|-100<br>~~a~~<br>~~ee~~<br>~~(~~<br>||VGS= -20V<br>~~a~~<br>~~(QO~~|
|gfs<br>~~a~~|Forward Transconductance<br>~~a~~<br>~~rs~~<br>~~a~~|62<br>~~a~~<br>~~a ~~<br>~~rs~~<br>~~rd~~<br>|–––<br>~~a~~<br> ~~ee~~<br>~~rs~~<br><br>|–––<br>~~a~~<br>~~ee~~<br>~~rs~~<br>~~(~~<br>|S<br>~~a~~<br>~~rs~~<br>~~(~~|VDS= 15V, ID= 10A<br>~~a~~<br>~~rs~~<br>~~(QO~~|
|Qg<br>~~a~~|Total Gate Charge<br>~~rs~~<br>~~a~~|–––<br>~~rs~~<br>~~rd~~<br>|9.5<br>~~rs~~<br><br>|14<br>~~rs~~<br>~~(~~<br>|nC<br>~~rs~~<br>~~(~~<br>~~QO~~|See Fig. 16<br>VDS= 15V<br>VGS= 4.5V<br>ID= 10A<br>~~rs~~<br>~~(QO~~<br>~~QO~~|
|Qgs1<br>~~a~~|Pre-Vth Gate-to-Source Charge<br>~~aee~~|–––<br>~~rd ~~<br>~~ee~~<br>~~ee~~|3.0<br> <br>~~ee~~|–––<br> ~~(~~<br>~~ee~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~<br>~~ee~~|1.0<br>~~es~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain Charge<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|3.0<br>~~ee~~|–––<br>~~ee~~|||
|Qgodr|Gate Charge Overdrive<br>~~es~~|–––<br>~~es~~<br>~~ee~~<br>~~ee~~|2.5<br>~~es~~|–––<br>~~es~~|||
|Qsw|Switch Charge (Qgs2+ Qgd)<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ss~~|4.0<br>~~es~~<br>~~ss~~|–––<br>~~es~~<br>|||
|Qoss|Output Charge<br>~~es~~<br>~~rs~~|–––<br>~~es~~<br>~~ee~~<br>~~rs~~<br>~~ss~~<br>~~nn~~|5.6<br>~~es~~<br>~~rs~~<br>~~ss~~<br>~~nn~~|–––<br>~~es~~<br>~~rs~~<br><br>|nC<br>~~rs~~<br>~~QO~~<br>~~QO~~|VDS= 15V, VGS= 0V<br>~~rs~~<br>~~QO~~<br>~~QO~~|
|RG|Gate Resistance<br>~~rs~~<br>~~es~~|–––<br>~~rs~~<br>~~ss~~<br>~~es~~<br>~~nn~~<br>~~ee~~|2.3<br>~~rs~~<br>~~ss ~~<br>~~es~~<br>~~nn~~|4.5<br>~~rs~~<br> <br>~~es~~<br>|Ω<br>~~rs~~<br> ~~QO~~<br>~~es~~<br>~~QO~~|~~rs~~<br>~~QO~~<br>~~es~~<br>~~QO~~|
|td(on)|Turn-On DelayTime<br>~~es~~|–––<br>~~nn~~<br>~~es~~<br>~~ee~~|8.7<br>~~nn ~~<br>~~es~~|–––<br> <br>~~es~~|ns<br> ~~QO~~|VDD= 16V, VGS= 4.5V<br>ID= 10A<br>Clamped Inductive Load<br>~~QO~~|
|tr|Rise Time<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|6.3<br>~~ee~~|–––<br>~~ee~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~es~~<br>~~ee~~|11<br>~~es~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|3.8<br>~~ee~~|–––<br>~~ee~~|||
|Ciss|Input Capacitance<br>~~es~~|–––<br>~~es~~<br>~~ee~~|1210<br>~~es~~|–––<br>~~es~~|pF|ƒ= 1.0MHz<br>VGS= 0V<br>VDS= 15V|
|Coss|Output Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|270<br>~~ee~~|–––<br>~~ee~~|||
|Crss|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~|140<br>~~ee~~|–––<br>~~ee~~|||



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1000 1000<br>VGS VGS<br>TOP           10V TOP           10V<br>8.0V4.5V ae eee ee 8.0V4.5V a eeee<br>4.0V 4.0V<br>100 3.5V A) )| 3.5V 0<br>3.0V 3.0V<br>2.8V 100 2.8V<br>BOTTOM 2.5V BOTTOM 2.5V<br>sg Or EE wy 4r-<br>10 A AT ee e ooo e=ee —————|<br>P AH 10 Q Z<br>2.5V 2.5V<br>1 P | | eer TTT Z o y e<br>a eat 20µs PULSE WIDTH eel Meee 20µs PULSE WIDTH |<br>Tj = 25°C Tj = 150°C<br>0.1 ELLE meal 1 || | TTT ll<br>0.1 1 10 0.1 1 10<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 2.0<br>r s es ee ID = 13A<br>Ee ee es es VGS = 10V<br>100 e e oee 1.5 LL ELLE BE<br>T = 150°C<br>|} | J  J 4<br>ee ee ee ee wa<br>i/o LLLXK LLL<br>10 1.0<br>TJ = 25°C<br>ee LT<br>a ee ee es ee —<br>VDS = 10V<br>20µs PULSE WIDTH<br>1 ed 0.5 ALLELE EEL<br>2 3 4 5 6 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>ID, Drain-to-Source Current (A)<br>)(Α<br>ID, Drain-to-Source Current<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance vs. Temperature 

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10000 12.0<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED ID= 10A<br>Crss   = Cgd  10.0 VDS= 24V<br>_ Coss  = Cds + Cgd | VDS= 15V<br>ee<br>8.0<br>H Ciss H H | Ve<br>1000 6.0<br>= | aaa<br>C 4.0<br>oss<br>2.0<br>Crss<br>100 = HEEFTaePSSll 0.0 Yi =a An | ft<br>1 10 100 0 4 8 12 16<br>VDS, Drain-to-Source Voltage (V)  QG  Total Gate Charge (nC)<br>Fig 5.   Typical Capacitance vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.00 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100.00 100<br>TJ = 150°C<br>10.00 10 100µsec<br>S f] FSi 1msec<br>T = 25°C<br>J<br>1.00 1<br>TA = 25°C 10msec<br>Tj = 150°C<br>VGS = 0V Single Pulse<br>a HiEHH<br>0.10 0.1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>VGS, Gate-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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Ie Rectifier<br>14 2.5<br>12 w p<br>2.0<br>10 N ee<br>8 P P ID = 250µA<br>1.5<br>6 e ee<br>4 a N<br>2 p f 1.0<br>0 | | | | | | lt 0.5<br>25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150<br> TA , Ambient Temperature (°C) TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Threshold Voltage vs. Temperature<br>Ambient Temperature<br>100<br>D = 0.50<br>10 0.20<br>0.10<br>0.05<br>1 0.010.02 τJ τJτ1τ1 R1 R1 τ2 τR22 R2 Rτ33 R τ3 3 τR4τ4R4 4 τCτ Ri (°C/W)   1.8556       0.0003372.4927       0.01275225.570       0.691000 τi (sec)<br>0.1 i l<br>afl Ci= τi/Ri T — 20.340       21.90000<br>Ci i/Ri<br>SINGLE PULSE P DM<br>0.01 ( THERMAL RESPONSE ) t 1 t 2<br>Notes:<br>1. Duty factor D = t   / t 1 2<br>PC E Pern PT ec CCE 2. Peak T J = P DM x  Z thJA + T A |<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>VGS(th) Gate threshold Voltage (V)<br>ID,  Drain Current (A)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20VVGS<br>tp 0.01Ω<br>an<br> Unclamped Inductive Test Circuit 3<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>< tp<br>/<br>/ \<br>/ |<br>IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>rt .3µF<br>LLji +<br>D.U.T. -VDS<br>VGS<br>3mA<br>a |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13.** Gate Charge Test Circuit 

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140 P tH<br>120100 NK EPERRtf | BOTTOM 10A<br>80<br>60<br>A LE TTT<br>40<br>X \GHEEEEEE<br>20<br>S S<br>0 PPL RESL<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy vs. Drain Current 

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LD<br>VDS<br>+<br>VDD -<br>D.U.T<br>VGS<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br>mi<br>Fig 14a.   Switching Time Test Circuit i)<br>V<br>DS<br>90%<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 14b.** Switching Time Waveforms 

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Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period ——— + D = —— Period<br>Circuit Layout Considerations V | GS=10V<br>   •<br>(4) [©)] | t<br>•<br>| =] - LowGround StrayPla I n eductance<br>•   Low Leakage Inductance a) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [l] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 + VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( 4 •   dv/dt controlled by Rg Vop - Inductor Curent<br>•<br>D.U.T. - Device Under Test SOO |<br>Isp controlled by Duty Factor "D" @ Ripple  ≤ 5% ISD<br>* Vg = 5V for Logic Level Devices<br>Fig 15.  Peak Diode Recovery dv/dt Test Circuit or N-Channel<br>HEXFET ® Power MOSFETs<br>Id<br>Vds f!<br>1 Vgs<br>l<br>1<br>1<br>1<br>1<br>I<br>1<br>|<br>H 1<br>|<br>Vgs(th) HH [1] 1<br>HH [1] 1<br>HH [1] 1<br>| \<br>\ H ! ! |<br>> <1) _ wm I dr_| i<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 16.** Gate Charge Waveform 

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## **Power MOSFET Selection for Non-Isolated DC/DC Converters** 

## **Control FET** 

## **Synchronous FET** 

The power loss equation for Q2 is approximated by; 

**==> picture [185 x 15] intentionally omitted <==**

This can be expanded and approximated by; 

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*dissipated primarily in Q1. 

For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant.  Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. 

The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of  Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Q /Q must be minimized to reduce the gd gs1 potential for Cdv/dt turn on. 

Figure A:  Qoss Characteristic 

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## **SO-8 Package Details** 

## **SO-8 Part Marking** 

**Note: For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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## **SO-8 Tape and Reel** 

Dimensions are shown in millimeters (inches) 

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TERMINAL NUMBER 1<br>esos] |<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) | FEED DIRECTION a<br>**----- End of picture text -----**<br>


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NOTES:<br>**----- End of picture text -----**<br>


1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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 330.00<br>(12.992)<br>  MAX.<br>WAT<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.62mH, RG = 25Ω, IAS = 10A. Pulse width ≤ 400µs; duty cycle ≤ 2%. When mounted on 1 inch square  copper board. 

## **Note: For the most current drawing please refer to IR website at http://www.irf.com/package/** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 05/2008 

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> specialises in exactly the cases where availability is the real problem: stock
> shortages, allocation crises, end-of-life components, and cost-reduction
> alternatives. They guarantee delivery even during supply chain disruptions and
> typically respond to quote requests within one business day.
> [Request a quote](https://novapart.co/quote/) — it's free and there's no
> minimum order.