# Power MOSFET, N Channel, 30 V, 13 A, 0.011 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2468019/)

**URL**: https://novapart.co/products/IRF7413TRPBF/power-mosfet-n-channel-30-v-13-a-0011-ohm-soic
**SKU**: IRF7413TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7340
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 2.5W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.011ohm |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 13A |
| Drain Source On State Resistance | 0.011ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2468019/)

100% R Fast SwitchingLead-Free G Tested 

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## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratingsgss**|**Absolute Maximum Ratingsgss**|**Absolute Maximum Ratingsgss**|**Absolute Maximum Ratingsgss**|
|---|---|---|---|
|**Symbol**|**Parameter**|**Max**|**Units**|
|VDS|Drain-to-Source Voltage|30|V|
|VGS|Gate-to-Source Voltage|± 20||
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V|13|A<br>~~a~~<br>~~A~~|
|ID@ TA= 70°C|Continuous Drain Current, VGS@ 10V<br>~~a~~|9.2<br>~~a~~||
|IDM|~~Pulsed Drain Current~~<br>~~A~~|58<br>~~A~~||
|PD@TA= 25°C|Power Dissipation<br>~~A~~|2.5<br>~~A~~|W<br>~~A~~|
||Linear Derating Factor|0.02|mW/°C|
|EAS<br>~~a~~|~~Single Pulse Avalanche Energency~~<br>~~a~~<br>~~a~~|260<br>~~a~~<br>~~a~~|mJ<br>~~a~~<br>~~a~~|
|dv/dt<br>~~a~~|Peak Diode Recovery dv/dt<br>~~a~~|5.0<br>~~a~~|V/ns<br>~~a~~|
|TJ, TSTG<br>~~a~~|Junction and Storage Temperature Range<br>~~a~~|-55 to +150<br>~~a~~|°C<br>~~a~~|



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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**<br>~~a~~|**Min**|**Typ**<br>~~Os~~|**Max **<br>~~Os GO~~|**Units**<br>~~GO~~|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~GO~~<br>~~a~~|30<br>~~GO~~|–––<br>~~GO~~<br>~~Os~~|–––<br>~~GO~~<br>~~Os GO~~|V<br>~~GO~~<br>~~GO~~|VGS= 0V, ID= 250µA<br>~~GO~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~GO~~<br>~~a~~|–––<br>~~GO~~|0.034<br>~~GO~~<br>~~Os~~<br>~~PT~~|–––<br>~~GO~~<br>~~Os GO~~<br>~~PT~~|V/°C<br>~~GO~~<br>~~GO~~<br>~~(~~<br>~~Oe~~|Reference to 25°C, ID= 1mA<br>~~GO~~<br>~~(~~<br>~~eee~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~re~~|–––<br>~~re~~|–––<br>~~re~~<br>~~PT~~|0.011<br>~~re~~<br>~~PT~~|Ω<br>~~re~~<br>~~Oe~~|VGS= 10V, ID= 7.3A<br>~~re~~<br>~~eee~~|
|||–––<br>~~re~~|–––<br>~~re~~<br>~~PT~~|0.018<br>~~re~~<br>~~PT~~||VGS= 4.5V, ID= 3.7A<br>~~re~~<br>~~eee~~<br>@|
|VGS(th)|Gate Threshold Voltage<br>~~re~~<br>~~es~~|1.0<br>~~re~~<br>~~es~~|–––<br>~~re~~<br>~~PT~~<br>~~es~~<br>~~OO~~|3.0<br>~~re~~<br>~~PT~~<br>~~es~~<br>~~OO~~|V<br>~~re~~<br>~~Oe~~<br>~~es~~<br>~~GO~~|VDS= VGS, ID= 250µA<br>~~re~~<br>~~eee~~<br>~~es~~|
|gfs|Forward Transconductance<br>~~GO~~|10<br>~~GO~~|–––<br>~~GO~~<br>~~OO~~<br>~~PT~~|–––<br>~~GO~~<br>~~OO~~<br>~~PT~~|S<br>~~GO~~<br>~~GO~~<br>~~Oe ee~~|VDS= 10V, ID= 3.7A<br>~~GO~~<br>~~ee~~|
|IDSS|Drain-to-Source Leakage Current<br>~~GO~~<br>~~ne~~|–––<br>~~GO~~<br>~~ne~~|–––<br>~~GO~~<br>~~OO~~<br>~~ne~~<br>~~PT~~|12<br>~~GO~~<br>~~OO~~<br>~~ne~~<br>~~PT~~|µA<br>~~GO~~<br>~~GO~~<br>~~ne~~<br>~~Oe ee~~|VDS= 30V, VGS= 0V<br>~~GO~~<br>~~ne~~<br>~~ee~~|
|||–––<br>~~ne~~|–––<br>~~ne~~<br>~~PT~~|25<br>~~ne~~<br>~~PT~~||VDS= 24V, VGS= 0V, TJ= 125°C<br>~~ne~~<br>~~ee~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee~~|–––<br>~~ee~~|–––<br>~~PT~~<br>~~ee~~|-100<br>~~PT~~<br>~~ee~~|nA<br>~~Oe ee~~<br>~~ee~~|VGS= -20V<br>~~ee~~<br>~~ee~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~|–––<br>~~ee~~<br>~~Pt~~|–––<br>~~ee~~<br>~~Pt~~|100<br>~~ee~~<br>~~Pt~~||VGS= 20V<br>~~ee~~|
|Qg|Total Gate Charge<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~Pt~~<br>~~es~~|52<br>~~ee~~<br>~~Pt~~<br>~~es~~|79<br>~~ee~~<br>~~Pt~~<br>~~es~~|nC<br>~~ee~~<br>~~(~~|ID= 7.3A<br>VDS= 24V<br>VGS= 10V, See Fig. 6 and 9<br>~~ee~~<br>@<br>~~(~~|
|Qgs|Gate-to-Source Charge<br>~~a~~|–––<br>~~a~~|6.1<br>~~a~~|9.2<br>~~a~~|||
|Qgd<br>~~a~~|Gate-to-Drain("Miller")Charge<br>~~a~~<br>~~a~~|–––<br>~~a~~|16<br>~~a~~|23<br>~~a~~<br>~~(~~|||
|RG<br>~~a~~|Gate Resistance<br>~~a~~<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|3.7<br>~~a~~<br>~~(~~|Ω<br>~~(~~|~~(~~|
|td(on)<br>~~a~~|Turn-On DelayTime<br>~~a~~<br>~~a~~|–––<br>~~a~~|8.6<br>~~a~~|–––<br>~~(~~<br>~~a~~|ns<br>~~(~~|RG= 2.0Ω,See Fig. 10<br>RG= 6.2Ω<br>VDD= 15V<br>ID= 7.3A<br>~~(~~<br>@|
|tr|Rise Time<br>~~a~~|–––<br>~~a~~|50<br>~~a~~|–––<br>~~a~~|||
|td(off)|Turn-Off DelayTime<br>~~a~~|–––<br>~~a~~|52<br>~~a~~|–––<br>~~a~~|||
|tf|Fall Time<br>~~a~~|–––<br>~~a~~|46<br>~~a~~|–––<br>~~a~~|||
|Ciss|Input Capacitance<br>~~es~~|–––<br>~~es~~|1800<br>~~es~~|–––<br>~~es~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz, See Fig. 5|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~es~~<br>~~ee~~|680<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~a~~|–––<br>~~a~~<br>~~ee~~|240<br>~~a~~<br>~~ee~~|–––<br>~~a~~|||



## **Source-Drain Ratings and Characteristics** 

|**Symbol**<br>**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>**Conditions**|
|---|
|Continuous Source Current<br>(Body Diode)<br>A<br>Pulsed Source Current<br>(Body Diode)<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.0<br>V<br>trr<br>Reverse RecoveryTime<br>–––<br>74<br>110<br>ns<br>Qrr<br>Reverse RecoveryCharge<br>–––<br>200<br>300<br>nC<br>ISM<br>–––<br>–––<br>58<br>IS<br>3.1<br>–––<br>–––<br>MOSFET symbol<br>TJ= 25°C, IS= 7.3A, VGS= 0V<br>TJ= 25°C, IF= 7.3A<br>di/dt = 100A/µs<br>showing  the<br>integral reverse<br>p-n junction diode.<br>~~re~~<br>ms<br>~~a)~~<br>~~a~~<br>|<br>~~GO~~<br>~~GO QO~~<br>~~**e**s~~<br>~~oe ae ie os a~~<br>~~e~~<br>~~®~~|
|Notes:|
|ISD≤<br>≤<br>≤<br>® Repetitive rating;<br>pulse width limited by<br>®<br>7.3A, di/dt<br>100A/us, Vpp<br>Vrypss,|
|≤<br>max. junction temperature.<br>( See fig. 11<br>)<br>Ty<br>150°C|
|≤<br>≤<br>@ Starting T)= 25°C,<br>L=9.8mH<br>@® Pulse width<br>300ys; duty cycle<br>2%.|
|Ω<br>Rg=25_<br>,las=7.3A.(SeeFigure12)<br>®<br>SurfacemountedonFR-4board|



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100 — a  TOP           15V VGs]<br>                   10V<br>er                    7.0V<br>Re”) 7 eee                    5.5V<br>                   4.5V<br>mw Aa                    4.0V<br>                   3.5V<br> BOTTOM   3.0V<br>10<br>YSf feZa<br>0 7<br>[7 | ft<br> 3.0V<br>aarti)ee ot<br>AM MmBRniil<br>Gai ll<br> T   = 25°CJ<br>1<br>0.1 [TTT 1 at 10<br>V      , Drain-to-Source Voltage (V)DS<br>Fig 1. Typical Output Characteristics<br>100<br>a———CC<br>a ee<br>a a ae<br>eS T  = 150°CJ 4a<br>|<br>T  = 25°CJ<br>10 VA<br>A<br>Vsi————re es ee es<br>a ee eeeeee ee<br>ee<br> V     = 10VDS<br>1<br>|| syeruse more<br>3.0 3.5 4.0 4.5<br>V     , Gate-to-Source Voltage (V)GS<br>I    , Drain-to-Source Current (A)D<br>D<br>I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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100<br>no  TOP           15V VGs}<br>                   10V<br>a                    7.0V<br>pT re                    5.5V<br>                   4.5V<br>Rey Za                    4.0V<br>                   3.5V<br> BOTTOM   3.0V<br>10  3.0V<br>)eZ —££/ a. A _ Eee<br>UfS |<br>VUSi,M 2am Setit A e e e  eee el<br>CAMEEG i eel<br>SERB ll<br> T   = 150°CJ<br>1<br>0.1 [LT 1 ntat 10<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 2. Typical Output Characteristics<br>2.0<br>M E<br>y<br>1.5 PEELE EL<br>LL ZO<br>DeA<br>1.0 TEL<br>eTALE - ,AT | enLL Ey<br>0.5<br>PEELE EE<br>ae<br>0.0<br>PPE EE ft bow<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T   , Junction Temperature (°C)J<br>D<br>I   , Drain-to-Source Current (A)<br>(Normalized)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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3200<br>V      = 0V,         f = 1MHzGS<br>Gn C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds<br>2800 C      = Crss         gd<br>|_| s C      = C     + Coss        ds         gd<br>2400 N rr<br>SL NS eee eee<br>2000 ss<br>SS ee<br>1600<br>1200 ec|eeeeer =,<br>a <<br>800 ss<br>pro IN<br>ET<br>400<br>0 Sete<br>1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 5. Typical Capacitance Vs.<br>Drain-to-Source Voltage<br>100 ——————<br>SS  —<br>-——_} T  = 25°CJ [ ooa<br>T  = 150°CJ<br>10 Yt;—————————|<br>-f\-|—<br>fp yf pe<br>1 Ji tt | eed A<br>0.4 1.2 2.0 2.8 3.6<br>V     , Source-to-Drain Voltage (V)SD<br>C, Capacitance (pF)<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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20<br>I    = 7.3AD<br>Vo =24V<br>16 Hp poe sa<br>Sane EaEGaS Y/<br>12<br>SESE SRERD 45<br>\f<br>8 PonnGnp/4ann<br>pf | TA |<br>Pet TL wT<br>4 Eeeeeaneeee<br>|i LZ<br>    SEE FIGURE 9<br>0 Vase Yi |  [i aeuaneee<br>0 10 20 30 40 50 60<br>Q   , Total Gate Charge (nC)G<br>Fig 6. Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br> 1000<br>R OPERATION IN THIS AREA LIMITED AEI<br>BY RDS(on)<br>= cut<br>(| att<br> 100<br>PER<br>100us<br>TE SCO Tl<br> 10<br>AT TPS Pl<br>1ms<br> T TCJ = 25  C= 150  C° ° 10ms<br>S  Single Pulse e i S ea<br> 1<br>ci t<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>**----- End of picture text -----**<br>


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Ter Rectifier<br>QG<br>o e Vos aN<br>10V. QGS QGD Ves D.U.T.<br>+<br>-<br>VG<br>y+ 40V<br>Pulse Width ≤ 1  ys<br>Charge > Duty Factor ≤ 0.1 %<br>Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test<br>Current Regulator<br>Same Type as D.U.T.<br>| VDS<br>50KΩ 90%<br>12V .2µF<br>.3µF<br>+<br>LE] fy D.U.T. -VDS<br>10%<br>VGS VGS | |<br>3mA r | t \< d(on) >< tr >| t «he d(off) tf<br>=<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


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 100<br>D = 0.50<br>P C ee tt<br>sa ae aS ee ee<br>0.20<br> 10<br>0.10<br>r e<br>e 0.050.02 a eseeri rrr eT PDM<br> 1 e e<br>0.01 t1<br>ane a SINGLE PULSE a a ee t2<br>(THERMAL RESPONSE)<br>Notes:<br>Set i<br>1. Duty factor D = t   / t1 2<br>o i A TT 2. Peak TJ = P DM x  ZthJA + TA<br>0.1<br>0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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15V<br>VDS L DRIVER<br>RG D.U.T +<br>" - [V][DD]<br>IAS<br>: 20V it<br>tp 0.01Ω<br>Fig 12a. Unclamped Inductive| Test Circuit<br>V(BR)DSS<br>~<— tp —><br>/ / \<br>/y Ih<br>IAS<br>**----- End of picture text -----**<br>


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600<br>ID<br>Vj]<br>TOP 3.3A<br>500 A yt 6.0A<br>BOTTOM 7.3A<br>PN ee<br>p tT | yy<br>400<br>At of<br>PT N | ft | ft tt<br>300 GENE See<br>INEXEfp<br>200 NWN<br>100 ARAN—~ —_»<br>SSN<br>Pe SS<br>0<br>25 50 75 100 125 150<br>Starting T  , Junction Temperature ( C)J o<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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D.U.T + Circuit Layout Considerations<br>—_    •  Low Stray Inductance<br>®  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Re •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  a Forward Drop<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


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## **SO-8 Package Outline** 

Dimensions are shown in millimeters (inches) 

## **SO-8 Part Marking** 

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## **SO-8 Tape and Reel** 

Dimensions are shown in milimeters (inches) 

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TERMINAL NUMBER 1<br>oO OC O<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )7.9 ( .312 ) oe FEED DIRECTION<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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 330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>LX 12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 02/2008 

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## Links

- [View this product on Novapart](https://novapart.co/products/IRF7413TRPBF/power-mosfet-n-channel-30-v-13-a-0011-ohm-soic)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irf7413trpbf/mosfet-n-ch-30v-13a-soic-8/dp/2468019)
---

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