# Power MOSFET, P Channel, 12 V, 16 A, 7000 µohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:1298514RL/)

**URL**: https://novapart.co/products/IRF7410TRPBF/power-mosfet-p-channel-12-v-16-a-7000-ohm-soic
**SKU**: IRF7410TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3810
**Stock**: 10+

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900mV; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 12V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 16A |
| Drain Source On State Resistance | 7000µohm |
| Gate Source Threshold Voltage Max | 900mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1298514RL/)

PD - 94025 

## IRF7410 

HEXFET[®] Power MOSFET 

Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel 

|**VDSS**<br>**-12V**|**RDS(on) max**|**ID**<br>-16A<br>-13.6A<br>-11.5A|
|---|---|---|
||**DS(on)**<br>7mΩ@VGS= -4.5V||
||9mΩ@VGS= -2.5V||
||13mΩ@VGS= -1.8V||



## **Description** 

These P-Channel HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.  This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. 

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.  With these improvements, multiple devices can be used in an application with dramatically reduced board space.  The package is designed for vapor phase, infrared, or wave soldering techniques. 

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A<br>S 1 8 D<br>S 2 7 D<br>S 3 6 D<br>G 4 5 D<br>Top View SO-8<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

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a Parameter Max. Units<br>-——— VDS a Drain- Source Voltage -20 — V<br>ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -16<br>ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -13 A<br>aee IDM Pulsed Drain Current  -65 ie<br>a PD @TA = 25°C Power Dissipation  2.5 W<br>OO PD @TA = 70°C Power Dissipation  1.6<br>a Linear Derating Factor 20 mW/°C<br>a VGS Gate-to-Source Voltage  ±8 V<br>TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C<br>a<br>**----- End of picture text -----**<br>


**Thermal Resistance** 

|a|**Parameter**<br>~~a~~|**Max.**<br>~~a~~|**Units**|
|---|---|---|---|
|RθJA<br>|Maximum Junction-to-Ambient<br> ~~a~~|50<br>~~a~~|°C/W|



1 

07/11/01 

## IRF7410 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~es~~<br>~~rs~~|**Parameter**<br>~~ss~~<br>~~GQ~~|**Min.**<br>~~ss~~<br>~~GQ~~|**Typ. **<br>~~rs~~<br>~~GQ GO~~|**Max. **<br>~~GO~~|**Units**<br>~~GO~~|**Conditions**<br>~~GO~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~es~~<br>~~rs~~<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~ss~~<br>~~GQ~~<br>~~Gs~~|-12<br>~~ss ~~<br>~~GQ~~<br>~~Gs~~|–––<br> ~~rs~~<br>~~GQ GO~~<br>~~GG~~|–––<br>~~GO~~<br>~~GG QO~~|V<br>~~GO~~<br>~~QO~~|VGS= 0V, ID= -250µA<br>~~GO~~<br>~~QO~~|
|∆V(BR)DSS/∆TJ<br>~~rs~~<br>~~es~~|Breakdown Voltage Temp. Coefficient<br>~~GQ~~<br>~~Gs~~|––– <br>~~GQ~~<br>~~Gs~~<br>~~**|**~~|0.006 <br>~~GQ GO~~<br>~~GG~~<br>~~**|**~~|–––<br>~~GO~~<br>~~GG QO~~<br>|V/°C<br>~~GO~~<br>~~QO~~|Reference to 25°C, ID= -1mA<br>~~GO~~<br>~~QO~~|
|RDS(on)<br>~~es~~<br>~~rs~~<br>~~rs~~|Static Drain-to-Source On-Resistance<br>~~Gs~~<br>~~Gs~~|–––<br>~~Gs~~<br>~~**|**~~||–––<br>~~GG~~<br>~~**|**~~||7<br>~~GG QO~~<br>|mΩ<br>~~QO~~<br>~~QO~~|VGS= -4.5V, ID= -16A<br>~~QO~~|
|||–––<br>~~**|**~~|~~|~~|–––<br>~~**|**~~|~~|~~|9<br>||VGS= -2.5V, ID= -13.6A|
|||–––<br>|~~||~~<br>~~Gs~~|–––<br>|~~||~~<br>~~GG~~|13<br>~~|~~<br>~~GG QO~~||VGS= -1.8V, ID= -11.5A<br>~~QO~~|
|VGS(th)<br>~~rs~~<br>~~rs~~|Gate Threshold Voltage<br>~~Gs~~|-0.4<br>~~||~~<br>~~Gs~~|–––<br>~~||~~<br>~~GG~~|-0.9<br>~~|~~<br>~~GG QO~~|V<br>~~QO~~|VDS= VGS, ID= -250µA<br>~~QO~~|
|gfs<br>~~rs~~<br>~~rs~~<br>~~ee~~|Forward Transconductance<br>~~Gs~~<br>~~GQ~~<br><br>~~|~~|55<br>~~|~~<br>~~Gs~~<br>~~GQ~~<br><br>~~|~~|–––<br>~~|~~<br>~~GG~~<br>~~GQ~~<br><br>|–––<br>~~|~~<br>~~GG QO~~<br>~~GO~~<br><br>|S<br>~~QO~~<br>~~GO~~<br>|VDS= -10V, ID= -16A<br>~~QO~~<br>~~GO~~<br><br>~~en~~|
|IDSS<br>~~rs~~<br>~~ee~~<br>~~———_~~|Drain-to-Source Leakage Current<br>~~Gs~~<br>~~GQ~~<br>~~ee~~<br>~~|~~<br>~~———_~~|–––<br>~~Gs~~<br>~~GQ~~<br>~~ee~~<br>~~|~~|–––<br>~~GG~~<br>~~GQ~~<br>~~ee~~<br>|-1.0<br>~~GG QO~~<br>~~GO~~<br>~~ee~~<br>|µA<br>~~QO~~<br>~~GO~~<br>~~ee~~|VDS= -9.6V, VGS= 0V<br>~~QO~~<br>~~GO~~<br>~~ee~~<br>~~en~~|
|||–––<br>~~GQ~~<br>~~ee~~<br>~~|fT~~<br>|–––<br>~~GQ~~<br>~~ee~~<br>~~fT~~<br>|-25<br>~~GO~~<br>~~ee~~<br>~~fT~~||VDS= -9.6V, VGS= 0V, TJ= 70°C<br>~~GO~~<br>~~ee~~<br>~~en~~|
|IGSS<br>~~ee~~<br>~~———_~~<br>~~es~~|Gate-to-Source Forward Leakage<br>~~GQ~~<br><br>~~|~~<br>~~———_~~|–––<br>~~GQ~~<br><br>~~|fT~~<br>|–––<br>~~GQ~~<br><br>~~fT~~<br>|-100<br>~~GO~~<br><br>~~fT~~|nA<br>~~GO~~<br>|VGS= -8V<br>~~GO~~<br><br>~~en~~|
||Gate-to-Source Reverse Leakage<br><br>~~———_~~~~**e**e~~|–––<br>~~fT~~<br>~~e~~|–––<br>~~fT~~<br>~~e~~|100<br>~~fT~~||VGS= 8V|
|Qg<br>~~———_~~<br>~~es~~|Total Gate Charge<br><br>~~———_~~~~**e**e~~<br>~~G~~|–––<br>~~fT~~<br>~~e~~<br>~~G~~|91<br>~~fT~~<br>~~e~~<br>~~G~~|–––<br>~~fT~~<br>~~G~~|nC|ID= -16A<br>VDS= -9.6V<br>VGS= -4.5V<br>~~@~~|
|Qgs<br><br>~~es~~<br>~~ee~~<br>~~es~~|Gate-to-Source Charge<br>~~**e**e~~<br>~~ee~~|–––<br>~~e~~|18<br>~~e~~|–––|||
|Qgd<br>~~es~~<br>~~rs~~|Gate-to-Drain("Miller")Charge|–––|25|–––|||
|td(on)<br>~~es~~<br>~~rs~~<br>Rs|Turn-On Delay Time|–––|13|20|ns|VDD= -6V, VGS= -4.5V<br>ID= -1.0A<br>RD= 6Ω<br>RG= 6Ω<br>~~@~~<br>~~@~~|
|tr<br>~~rs~~<br>Rs<br>ee|Rise Time<br>~~ee~~|–––<br>~~ee~~|12<br>~~ee~~|18|||
|td(off)<br>Rs<br>ee<br>~~es~~|Turn-Off Delay Time<br>~~ee~~|–––<br>~~ee~~|271<br>~~ee~~|407|||
|tf<br>ee<br>~~es~~<br>~~SE~~|Fall Time<br>~~ee~~|–––<br>~~ee~~|200<br>~~ee~~|300|||
|Ciss<br>~~es~~<br>~~SE~~<br>es|Input Capacitance|–––|8676|–––|pF|VGS= 0V<br>VDS= -10V<br>ƒ = 1.0MHz<br>~~@~~|
|Coss<br>~~SE~~<br>es<br>Rs|Output Capacitance|–––|2344|–––|||
|Crss<br>~~SE~~<br>es<br>Rs|Reverse Transfer Capacitance|–––|1604|–––|||



## **Source-Drain Ratings and Characteristics** 

|~~nn~~|**Parameter**<br>~~es~~|**Min.**<br>~~ee~~|**Typ. **<br>~~ee~~|**Max.**<br>~~ee~~|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS<br>~~nn~~|Continuous Source Current<br>(Body Diode)<br>~~es~~|–––<br>~~ee~~|–––<br>~~ee~~|-2.5<br>~~ee~~|A<br>~~GG~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>S<br>D<br>G|
|ISM<br>~~nn~~|Pulsed Source Current<br>(BodyDiode)<br>~~es ~~|–––<br> ~~ee~~|–––<br>~~ee~~<br>~~GG~~|-65<br>~~ee~~<br>~~GG~~|||
|VSD<br>~~ee~~|Diode Forward Voltage<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~<br>~~GG~~|-1.2<br>~~ee~~<br>~~GG~~|V<br>~~ee~~<br>~~GG~~|TJ= 25°C, IS= -2.5A, VGS= 0V<br>~~ee~~|
|trr<br>es|Reverse Recovery Time|–––|97<br>~~GG~~|145<br>~~GG~~|ns<br>~~GG~~|TJ= 25°C, IF= -2.5A<br>di/dt = -100A/µs<br>@|
|Qrr<br>es|Reverse Recovery Charge|–––|134|201|µC||



**Notes:** 

©@ Repetitive rating;  pulse width limited by Surface mounted on 1 in square Cu board, t ≤ 10sec. max. junction temperature. 

@ Pulse width ≤ 400µs; duty cycle ≤ 2%. 

www.irf.com 

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## IRF7410 

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100<br>VGS<br>TOP           -7.0V<br>                  -5.0V<br>                  -4.5V<br>                  -2.5V<br>                  -1.8V<br>10 -1.5V<br>                  -1.2V<br>one ny BOTTOM   -1.0V<br>ee ee<br>1 el<br>-1.0V<br>20µs PULSE WIDTH<br>Tj = 25°C<br>0.1 CACGillie HT}<br>0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br> 100 ————<br>a T  = 150  CJ ° aa<br>Fo oA<br>e e<br> 10<br>P= ———— |<br>T  = 25  CJ °<br>Pf op fe<br>V      = -10VDS<br>A<br>20µs PULSE WIDTH<br> 1 A RE<br>1.0 1.2 1.4 1.6 1.8 2.0<br>-V     , Gate-to-Source Voltage (V)GS<br>D<br>-I   ,  Drain-to-Source Current (A)<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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100<br>VGS<br>TOP           -7.0V<br>                  -5.0V<br>                  -4.5V<br>                  -2.5V<br>                  -1.8V<br>                  -1.5V<br>                  -1.2V<br>Vea BOTTOM   -1.0V<br>10<br>eit 7-H eeFEEETT<br>-1.0V<br>20µs PULSE WIDTH<br>Tj = 150°C<br>1 a liin een lll<br>0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V)<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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2.0<br>ID = -16A<br>Pee ELEEE<br>P EE<br>1.5<br>AUTRE<br>1.0<br>ATEorn<br>0.5 PEE<br>ELEDODDEREEREEAAAILAAAAA VGS = -4.5V<br>0.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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## IRF7410 

**==> picture [438 x 472] intentionally omitted <==**

**----- Start of picture text -----**<br>
14000 VGS   = 0V,     f = 1 MHZ 6 ID = -16A V DS=-9.6V<br>12000 ml Ciss   = Cgs + Cgd, Cds  SHORTED 5 He p} AP<br>C   = C<br>rss   gd<br>C = C + C<br>10000 oss   ds  gd<br>Ciss 4<br>8000 - Tor | tl P at ttERERAa, tt Rae<br>3<br>a el EEE<br>6000<br>2<br>4000 Coss<br>2000 Pou Crss sa 1 Pt}e TT tT d A<br>| A e<br>0 LIF LLL 0 RS<br>0 20 40 60 80 100 120<br>1 10 100<br>Q   , Total Gate Charge (nC)G<br>-VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100  1000<br>OPERATION IN THIS AREA LIMITED<br>BY R<br>DS(on)<br>T  = 150  CJ °<br>ee A A COE<br> 10 Se e  100 oo Foo<br>100us<br>T  = 25  CJ ° 1ms<br> 1 Sie aa it e  10 ed ee e<br>| yf} | | | a<br>10ms<br> T TCJ = 25  C= 150  C° °<br>0.1 eePY iA [iit V      = 0 V GS  1 p  Single Pulse f TEfsETT<br>0.2 0.4 0.6 0.8 1.0 0.1  1  10  100<br>-V     ,Source-to-Drain Voltage (V)SD -V     , Drain-to-Source Voltage (V)DS<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D-<br>SD<br>-I     , Reverse Drain Current (A)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

## **Fig 8.** Maximum Safe Operating Area 

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## IRF7410 

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16 = RD<br>VDS<br>PNT<br>VGS<br>PEN IEEEE E E D.U.T.<br>12 NX RG<br>+- VDD<br>EEEERNGEEE |<br>VGS<br>8 PEt ELINA Pulse Width  F ≤ 1 µs<br>Duty Factor ≤ 0.1 %<br>ERRNe\<br>|<br>4 Fig 10a.   Switching Time Test Circuit<br>PEELE [EEA] r<br>Teh td(on) tr td(off) tf<br>0 PE Ltt Ltt | V10%GS |eeff\<br>25 50 75 100 125 150 Vo<br>T   , Case TemperatureC (  C)° |<br>90% X |<br>Fig 9.   Maximum Drain Current Vs. VDS \<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 100<br>D = 0.50<br>B GOeeewe<br>|_| SS ee<br> 10 0.20<br>0.10<br>0.05<br>= See er TT rn rr ri<br>0.02<br> 1<br>eteer<br>0.01<br>L e PDM<br>ne t1<br>0.1 (THERMAL RESPONSE)SINGLE PULSE t2<br>e e<br>ee e ee el ee e e Notes: ee<br>| | 1. Duty factor D = t   / t1 2<br>e e 2. Peak TJ = P DM x  Z thJA + TA<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>D<br>-I   , Drain Current (A)<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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## IRF7410 

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**----- Start of picture text -----**<br>
0.010<br>0.008 aPEE]<br>0.006<br>ID = -16A<br>A<br>0.004<br>0.002 SESS<br>0.0 2.0 4.0 6.0 8.0<br>-VGS, Gate -to -Source Voltage  (V)<br>)<br>RDS(on),  Drain-to -Source On Resistance (Ω<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
0.02<br>UY<br>0.015<br>V = -1.8V<br>GS<br>0.01<br>V = -2.5V<br>GS<br>0.005<br>VGS = -4.5V<br>P SE<br>0<br>0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0<br>-ID , Drain Current ( A )<br>RDS ( on ) , Drain-to-Source On Resistance ( )Ω<br>**----- End of picture text -----**<br>


## **Fig 12.** Typical On-Resistance Vs. Gate Voltage 

**Fig 13.** Typical On-Resistance Vs. Drain Current 

**==> picture [382 x 140] intentionally omitted <==**

**----- Start of picture text -----**<br>
Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>QG 12V .2µF<br>.3µF<br>QGS QGD D.U.T. +-VDS<br>VGS<br>VG<br>-3mA<br>IG ID<br>Charge a Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 14a.** Basic Gate Charge Waveform 

**Fig 14b.** Gate Charge Test Circuit 

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6 

## IRF7410 

**==> picture [441 x 200] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0 700<br>TTT TTT 600 TILL<br>0.8 ENE ATE00 OCT<br>500<br>Py NET Tt Td ACE B01 OE  CCF A CCIE ECF<br>= ID = -250µA 400 B00<br>0.6 Py PT |S} FONT CET A CEM CC A<br>300<br>PNET BEL A A<br>IN, CONE EMCEE<br>200<br>0.4 PP YP PP INGE BS) GUAT AN OE A UT<br>100<br>rr PT yy TIN . NN EEUUBRUVANOTU ANBRN ETATT<br>0.2 Py} tf tt ty IN 0 FCMCHE SHC FE<br>-75 -50 -25 0 25 50 75 100 125 150 0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000<br>TJ , Temperature ( °C ) Time (sec)<br>-VGS(th) ( V ) Power (W)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Vgs(th) Vs. Junction Temperature 

**Fig 16.** Typical Power Vs. Time 

www.irf.com 

7 

## IRF7410 

## **SO-8 Package Details** 

**==> picture [356 x 339] intentionally omitted <==**

**----- Start of picture text -----**<br>
INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>- | b  -}—+—+—,J .013 .020 0.33 0.51<br>7 6 loos 8 7 6 . 5 H aa — cD .0075.189 .1968.0098 ee 4.800.19 ee 5.000.25 ee<br>E<br>1 2 3 4 0.25 [.010]  A ee E .1497 .1574 3.80 4.00<br>e .050  BASIC 1.27  BASIC<br>e1 .025  BASIC 0.635  BASIC<br>H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X A e bk a L .016 .050 0.40 1.27<br>a y  0°  8°  0°  8°<br>7 e1 K x 45°<br>A<br>C<br>y<br>0.10 [.004]<br>SAEel 8X b A1 o (fnye 8X L 8X c<br>0.25 [.010]  C A B 7<br>eT OT<br>FOOTPRINT<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>6.46 [.255]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>j [a] nae [oa]<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>| iii<br>3X 1.27 [.050] aq ug ke g<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## NOTES: 

1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 

2.  CONTROLLING DIMENSION: MILLIMETER 

3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 

4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 

- 5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 

- 7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 

## **SO-8 Part Marking** 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

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YWW<br>XXXX<br>INTERNATIONAL F7101<br>ae<br>RECTIFIER<br>LOGO THEE<br>**----- End of picture text -----**<br>


DATE CODE (YWW) Y =  LAST DIGIT OF THE YEAR WW =  WEEK 

## LOT CODE 

PART NUMBER 

www.irf.com 

8 

## IRF7410 

## **Tape and Reel** 

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T E R M IN A L N U M B E R  1<br>Ooo Oo 6<br>12.3 ( .48 4 )<br>11.7 ( .46 1 )<br>8.1 ( .31 8 )<br>7.9 ( .31 2 ) ee FE E D  D IR E C TIO N<br>**----- End of picture text -----**<br>


N O TE S : 

- 1 .   C O N TR O L L IN G  D IM E N S IO N  : M IL L IM E TE R . 

- 2 .   A L L  D IM E N S IO N S  A R E  S H O W N  IN  M IL L IM E TE R S (IN C H E S ). 

- 3 .   O U TL IN E  C O N FO R M S  T O  E IA -4 8 1  &  E IA -5 4 1. 

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 33 0.00<br>(12.992)<br>  M AX .<br>14.40 ( .5 66  )<br>12.40 ( .4 88  )<br>**----- End of picture text -----**<br>


N O TE S  : 

1. C O N T R O LLIN G  D IME N S IO N  : M ILLIM E T ER . 

2. O U TL IN E  C O N FO R M S T O  E IA -481  & E IA -541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/01 

www.irf.com 

9 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF7410TRPBF/power-mosfet-p-channel-12-v-16-a-7000-ohm-soic)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf7410trpbf/mosfet-p-ch-12v-16a-so8/dp/1298514RL)
---

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