# Power MOSFET, P Channel, 12 V, 16 A, 0.007 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2725904/)

**URL**: https://novapart.co/products/IRF7410GTRPBF/power-mosfet-p-channel-12-v-16-a-0007-ohm-soic
**SKU**: IRF7410GTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2780
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | HEXFET |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | P Channel |
| Power Dissipation Pd | 2.5W |
| Rds(On) Test Voltage | 4.5V |
| On Resistance Rds(On) | 0.007ohm |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 12V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 16A |
| Drain Source On State Resistance | 0.007ohm |
| Gate Source Threshold Voltage Max | 900mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725904/)

## PD - 06247 IRF7410GPbF 

HEXFET Power MOSFET 

Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free Halogen-Free 

|**VDSS**<br>**-12V**|**RDS(on) max**|**ID**<br>-16A<br>-13.6A<br>-11.5A|
|---|---|---|
||**DS(on)**<br>7mΩ@VGS= -4.5V||
||9mΩ@VGS= -2.5V||
||13mΩ@VGS= -1.8V||



## **Description** 

These P-Channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.  This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. 

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.  With these improvements, multiple devices can be used in an application with dramatically reduced board space.  The package is designed for vapor phase, infrared, or wave soldering technique 

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A<br>S 1 8 D<br>S 2 7 D<br>S 3 6 D<br>G 4 5 D<br>SO-8<br>Top View<br>**----- End of picture text -----**<br>


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Parameter Max. Units<br>rs<br>RG VDS Drain- Source Voltage -12 V<br>ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -16<br>es<br>ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -13 A<br>IDM Pulsed Drain Current  -65<br>Oo [Gn] PD @TA = 25°C Power Dissipation  2.5<br>RGfp PD @TA = 70°C Power Dissipation  © 1.6<br>Linear Derating Factor 20 mW/°C<br>Re ©<br>VGS Gate-to-Source Voltage  ±8 V<br>Re<br>Reef TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C<br>**----- End of picture text -----**<br>


## **Thermal Resistance** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|RθJA|Maximum Junction-to-Ambient|50|°C/W|
|www.irf.com|||1|
||||07/10/09|



## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**|**Min.**<br>~~rs~~|**Typ.**<br>~~GD~~|**Max. **<br>~~GD~~|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~Ps~~|-12<br>~~Ps~~<br>~~rs~~|–––<br>~~Ps~~<br>~~GD~~|–––<br>~~Ps~~<br>~~GD~~|V<br>~~Ps~~|VGS= 0V, ID= -250µA<br>~~Ps~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~Gs~~|–––<br>~~rs ~~<br>~~Gs~~|0.006<br> ~~GD~~<br>~~Gs~~|–––<br>~~GD~~<br>~~Gs~~|V/°C<br>~~Gs~~|Reference to 25°C, ID= -1mA<br>~~Gs~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~Gs~~<br>~~**e**e~~|–––<br>~~Gs~~|–––<br>~~Gs~~<br>~~ft~~|7<br>~~Gs~~<br>~~ft~~|mΩ<br>~~Gs~~<br>|VGS= -4.5V, ID= -16A<br>~~Gs~~<br>®|
|||–––|–––<br>~~Pt~~|9<br>~~Pt~~||VGS= -2.5V, ID= -13.6A<br>a|
|||–––<br>|–––<br>~~Pt~~<br>|13<br>~~Pt~~<br>||VGS= -1.8V, ID= -11.5A<br>~~r)~~|
|VGS(th)|Gate Threshold Voltage<br>~~**e**e~~|-0.4<br>|–––<br>~~Pt~~<br>|-0.9<br>~~Pt~~<br>|V<br>|VDS= VGS, ID= -250µA<br>~~r)~~<br>~~(~~|
|∆VGS(th)/∆TJ|Gate Threshold Voltage Coefficient<br>~~**e**es~~|–––<br>~~s~~<br>~~Ge~~|-3.09<br>~~Pt~~<br>~~s~~<br>~~sO~~|–––<br>~~Pt~~<br>~~s~~<br>~~sO~~|mV/°C<br>~~s~~<br>~~(~~||
|gfs|Forward Transconductance<br>~~**e**e~~<br>~~ee~~|55<br><br>~~ee~~<br>~~Ge~~<br>~~**|**~~|–––<br>~~Pt~~<br><br>~~ee~~<br>~~sO~~<br>~~**|**~~|–––<br>~~Pt~~<br><br>~~ee~~<br>~~sO~~<br>~~OE~~|S<br><br>~~ee~~<br>~~(~~<br>~~OE~~|VDS= -10V, ID= -16A<br>~~r)~~<br>~~ee~~<br>~~(~~<br>~~OE~~|
|IDSS|Drain-to-Source Leakage Current<br>~~ee~~<br>~~Ee~~|–––<br>~~ee~~<br>~~Ge ~~<br>~~Ee~~<br>~~**|**~~|–––<br>~~ee~~<br> ~~sO~~<br>~~Ee~~<br>~~**|**~~|-1.0<br>~~ee~~<br>~~sO ~~<br>~~Ee~~<br>~~OE~~|µA<br>~~ee~~<br> ~~(~~<br>~~Ee~~<br>~~OE~~|VDS= -9.6V, VGS= 0V<br>~~ee~~<br>~~(~~<br>~~Ee~~<br>~~OE~~|
|||–––<br>~~Ee~~<br>~~**|**~~|–––<br>~~Ee~~<br>~~**|**~~|-25<br>~~Ee~~<br>~~OE~~||VDS= -9.6V, VGS= 0V, TJ= 70°C<br>~~Ee~~<br>~~OE~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~Ee~~<br>~~a~~|–––<br>~~Ee~~<br>~~**|**~~<br>~~a~~|–––<br>~~Ee~~<br>~~**|**~~<br>~~a~~|-100<br>~~Ee~~<br>~~OE~~<br>~~a~~|nA<br>~~Ee~~<br>~~OE~~<br>~~a~~|VGS= -8V<br>~~Ee~~<br>~~OE~~<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~a~~|–––<br>~~a~~<br>~~PT~~<br>~~es~~|–––<br>~~a~~<br>~~PT~~<br>~~Ge~~|100<br>~~a~~<br>~~PT~~||VGS= 8V<br>~~a~~|
|Qg|Total Gate Charge<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~**es**~~|91<br>~~es~~<br>~~Ge~~<br>~~**Ge**~~|~~es~~|nC|ID= -16A<br>VDS=-9.6V<br>VGS= -4.5V<br>~~@~~|
|Qgs|Gate-to-Source Charge<br>~~es~~<br>~~es~~|–––<br>~~es ~~<br>~~es~~<br>~~**es**~~|18<br> ~~Ge~~<br>~~es~~<br>~~**Ge**~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~es~~|–––<br>~~**es**~~<br>~~es~~|25<br>~~**Ge**~~<br>~~Ge~~||||
|td(on)|Turn-On DelayTime<br>~~es~~<br>~~es~~|–––<br>~~**es** ~~<br>~~es~~<br>~~es~~<br>~~es~~|13<br> ~~**Ge**~~<br>~~es~~<br>~~Ge~~<br>~~Ge~~|20<br>~~es~~|ns|RG= 6Ω<br>ID=-1.0A<br>RD= 6Ω<br>VDD= -6V   VGS= -4.5V<br>~~@~~<br>~~@~~|
|tr|Rise Time<br>~~es~~<br>~~es~~|–––<br>~~es ~~<br>~~es~~<br>~~es~~<br>~~**es**~~|12<br> ~~Ge~~<br>~~es~~<br>~~Ge~~<br>~~**Ge**~~|18<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~<br>~~es~~|–––<br>~~es ~~<br>~~es~~<br>~~**es**~~|271<br> ~~Ge~~<br>~~es~~<br>~~**Ge**~~|407<br>~~es~~|||
|tf|Fall Time<br>~~es~~|–––<br>~~**es**~~<br>~~es~~|200<br>~~**Ge**~~<br>~~Ge~~|300|||
|Ciss|Input Capacitance<br>~~es~~<br>~~es~~|–––<br>~~**es** ~~<br>~~es~~<br>~~es~~<br>~~es~~|8676<br> ~~**Ge**~~<br>~~es~~<br>~~Ge~~<br>~~Ge~~|–––<br>~~es~~|pF|VGS= 0V<br>VDS= -10V<br>ƒ= 1.0 MHz<br>~~@~~|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~es ~~<br>~~es~~<br>~~es~~|2344<br> ~~Ge~~<br>~~es~~<br>~~Ge~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es ~~<br>~~es~~|1604<br> ~~Ge~~<br>~~es~~|–––<br>~~es~~|||



@ Repetitive rating;  pulse width limited by max. junction temperature. oO) Pulse width ≤ 400µs; duty cycle ≤ 2%. 

Surface mounted on 1 in square Cu board, t ≤ 10sec. 

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100 100<br>VGS VGS<br>TOP           -7.0V TOP           -7.0V<br>-5.0V -5.0V<br>-4.5V -4.5V<br>AA et -2.5V Y ff -2.5V<br>-1.8V -1.8V<br>10 -1.5V-1.2V -1.5V-1.2V<br>BOTTOM -1.0V BOTTOM -1.0V<br>10<br>-1.0V<br>-1.0V<br>pee 7a<br>1<br>e ≤ e 60µs PULSE WIDTH e<br>≤60µs PULSE WIDTH<br>Tj = 25°C<br>0.1 re un | ET 1 | Tj = 150°C<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>100 2.0 ID = -16A<br>= = 52 PELE ETE<br>10 a 1.5 PEELE<br>P ET AYE TJ = 25°C LETT E EL<br>T = 150°C<br>1 PAA J  1.0 ELLEea TTY<br>er == seaaa= TLE| Lee<br>0.1 0.5<br>P V t DS = -10V<br>0.01 AA ≤60µs PULSE WIDTH 0.0 Ge e VGS = -4.5V<br>0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -60 -40 -20T  , Junction TemperatureJ 0 20 40 60 80 100 (  C)120° 140 160<br>VGS, Gate-to-Source Voltage (V)<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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14000 VGS   = 0V,     f = 1 MHZ 6 ID = -16A V DS=-9.6V<br>12000 C iss   = C gs  + C gd , C ds   SHORTED 5<br>C   = C<br>rss   gd<br>C = C + C<br>10000 oss   ds  gd<br>Ciss 4<br>8000 - HEEEEE HAE<br>Tome I 3 PEAT TT ATT<br>6000 a ee eee eee eee<br>2<br>4000 Coss Mooi = EEE<br>TT C<br>2000 Crss 1<br>en) PARES<br>ee<br>0 0<br>0 20 40 60 80 100 120<br>1 10 100<br>Q   , Total Gate Charge (nC)G<br>-VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100  1000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>T  = 150  CJ °<br>oe ie A A A Eo<br> 10  100<br>100us<br>T  = 25  CJ ° 1ms<br> 1  10<br>H f)<br>10ms<br> T TCJ = 25  C= 150  C° °<br>V      = 0 V GS  Single Pulse<br>0.1 PY {A | fT  1 _B EH<br>0.2 0.4 0.6 0.8 1.0 0.1  1  10  100<br>-V     ,Source-to-Drain Voltage (V)SD -V     , Drain-to-Source Voltage (V)DS<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D-<br>SD<br>-I     , Reverse Drain Current (A)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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16 PNNY Vos Ro<br>12 PE bwLNELNX ELE Re Ves bur -<br>+<br>SaaeaNGe AL Vee<br>8 PT LLL INE [I Ves ≤ 1<br>≤ 0.1 %<br>4 SeGegeananRENPi fT tL TN\ a Fig 10a. correcDuty Factor td(on)  Switching Time Test Circuittr td(off) tf<br>VGS<br>ae | > >| <> ><br>0 10%<br>25 50 75 100 125 150<br>T   , Case TemperatureC (  C)°<br>|<br>90%<br>Fig 9.   Maximum Drain Current Vs. eeeee e VDS vas<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 100<br>D = 0.50<br>A mer TTI<br> 10 a 0.20 a ene ll<br>0.10<br>0.05<br>S S eo<br>0.02<br> 1 A actl||<br>0.01<br>PDM<br>p—f ott er t1<br>0.1 (THERMAL RESPONSE)SINGLE PULSE t2<br>es ee eee ee<br>Notes:<br>in i 1. Duty factor D = t   / t1 2<br>a e e 2. Peak TJ = P DM x  ZthJA + TA<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>D<br>-I   , Drain Current (A)<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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0.010 0.02<br>0.008 LL L<br>0.015<br>ee ee<br>VGS = -1.8V<br>0.006<br>0.01<br>oe ee ID  e = -16A e y A<br>VGS = -2.5V<br>0.004<br>0.005<br>eeooo P| t VGS = -4.5V<br>0.002<br>ee 0 ee<br>0.0 2.0 4.0 6.0 8.0<br>0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0<br>-VGS, Gate -to -Source Voltage  (V) -ID , Drain Current ( A )<br>)<br>ΩRDS(on),  Drain-to -Source On Resistance (<br>)Ω RDS ( on ) , Drain-to-Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 12.** Typical On-Resistance Vs. Gate Voltage 

**Fig 13.** Typical On-Resistance Vs. Drain Current 

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QG<br>O O<br>QGS QGD<br>VG<br>Charge<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>-<br>THe) D.U.T. +VDS<br>VGS<br>-3mA<br>Ont.<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 14a.** Basic Gate Charge Waveform 

**Fig 14b.** Gate Charge Test Circuit 

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1.0 700 |<br>600<br>0.8 mN Oe a ee<br>SNE ID = -250µA 500400 AI<br>0.6<br>300<br>SEH ERE<br>200<br>0.4 PT ft yf | IN | 4 MBnN ENa<br>Pt | tf tf INS IN | 100 C UTANCI NOTICHEN NII ET E ETTTHIEMETT T l<br>0.2 PELE 0<br>-75 -50 -25 0 E 25  TET 50 75 100 125 150 0.0001 GIEISSEOT 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000<br>TJ , Temperature ( °C ) Time (sec)<br>-VGS(th) ( V ) Power (W)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Vgs(th) Vs. Junction Temperature 

**Fig 16** Typical Power Vs. Time 

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## **SO-8 Package Outline** (Mosfet & Fetky) 

Dimensions are shown in milimeters (inches) 

## SO-8 Part Marking Information 

**Note: For the most current drawing please refer to IR website at http://www.irf.com/package/** 

www.irf.com 

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## SO-8 Tape and Reel 

Dimensions are shown in milimeters (inches) 

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TERMINAL NUMBER 1<br>oo Oo o :<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) | FEED DIRECTION<br>|  330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


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NOTES:<br>**----- End of picture text -----**<br>


1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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NOTES :<br>**----- End of picture text -----**<br>


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1. CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>


2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2009 

www.irf.com 

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- [Supplier page](https://es.farnell.com/en-ES/infineon/irf7410gtrpbf/mosfet-p-ch-12v-16a-soic/dp/2725904)
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