# Power MOSFET, P Channel, 30 V, 5.8 A, 0.045 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2725903/)

**URL**: https://novapart.co/products/IRF7406TRPBF/power-mosfet-p-channel-30-v-58-a-0045-ohm-soic
**SKU**: IRF7406TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.0700
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-5.8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (08-Jul-2021) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 5.8A |
| Drain Source On State Resistance | 0.045ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725903/)

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S 1 8 DA<br>S oron 2 7 D Vpss = -30V<br>S an 3 6 D<br>G a 4 5 D Rpgion) = 0.045 Ω<br>Top View<br>.<br>te a<br>Wig. <s<br>val ‘<br>SO-8<br>**----- End of picture text -----**<br>


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∆ ∆<br>Rosion) Static Drain-to-Source On-Resistance |= | ——~ [0.048 Ω Ves = -10V, Ip = -2.8A @<br>| --- | -—- |o.070 Vos = -4.5V, Ip = -2.4A ®<br>Gate Threshold Voltage |-1.0|—— |---| v_ | Vps= Ves, Ip = -250uA<br>Forward Transconductance 131 {—-|-—-| s | Vos = -15V, Ip = -2.8A<br>|IDSS Drain-to-S rain-to-source | Leak Leakage Cc Curren t |—/— ||——~ ||-1.0-25 || re] A VosVos == -24V,-24V, VasVes == OV,OV Ty = 125°C<br>lass Gate-to-Source Forward Leakage | —- | — |-100 | nA Ves = -20V<br>[Q,___| Gate-to-Source Reverse Leakage |  —- | — |  100 | Ves = 20V<br>IQs Total Gate Charge _——~ |—- | 59 | Ip = -2.8A<br>IQgi | Gate- to-Drainto-Source("MilleCha r ")geCharge | ---- - | -—-— - | 5.721 | nc | V po s = - 10V,2.4V See Fig. 6 and 12 ®<br>SS]<br>i; [RisetimeTurn-On Delay Time 6 [Vo = 18<br>Tuen-Off ST — |] | = 28 Ω<br>Fall Time Delay Time |---|Tas47 |—[=]| "* | Ro=60 Rp=5.3__ Ω, See Fig. 10®<br>D<br>Lp Internal Drain Inductance — |} 25 ;— .<br>nH | Between lead tip G<br>Ls Internal Source Inductance — |; 40 ;— | and center of die contact<br>S<br>Input Capacitance | --- |1100 | — | Vos = OV<br>Ciss OutputReverseCapacitanceTransfer Capacitance =——-— [480| 220 [=]|-——- PF | f Vos = 1.0MHz, = -28v See Fig. 5<br>Source-Drain Ratings and Characteristics<br>Parameter Min. |Typ. |Max. | Units Conditions<br>Is Continuous Source Current 34 MOSFET symbol D<br>Body Diode ee showing the<br>A<br>G<br>Ism Pulsed Source Current | integral reverse<br>(Body Diode) © — |}— | 3 p-n junction diode. S<br>Diode Forward Voltage |-—-|—|-1.0] v | Ty = 25°C, Is = -2.0A, Vag = OV @<br>Reverse Recovery Time |---| 42 | 63 | ns | Ty = 25°C, le =-2.8A<br>Reverse Recovery Charge —— | 64 | 96 | nC | di/dt = 100A/us ©<br>ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls+Lp)<br>Notes:<br>Repetitive rating; pulse width limited by © Pulse width ≤  300us; duty cycle  ≤ 2%.<br>**----- End of picture text -----**<br>


ISD ≤ -2.8A, di/dt ≤ 90A/us, Vpp ≤ Ver)pss: ® Surface mounted on FR-4 board, t ≤ ≤ 

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1000 1000<br> TOP          - 15V  TOP          - 15V<br>                  - 10V                   - 10V<br>                  - 8.0V                   - 8.0V<br>                  - 7.0V                   - 7.0V<br>                  - 6.0V                   - 6.0V<br>                  - 5.5V 2 a                   - 5.5V a<br>                  - 5.0V                   - 5.0V<br> BOTTOM  - 4.5V  BOTTOM  - 4.5V<br>100 lll yz LL 100 lll TE TT<br> -4.5V<br> -4.5V<br>10 aya? 2 Z=-ac a eanlll 10 SE|y oa ye<br> 20µs PULSE WIDTH<br>1  T   = 25°CJ A 1  T   = 150°CJ<br>0.1 PCH 1 rieeeeeror 10 100 0.1 WTR 1 10 100<br>-V     , Drain-to-Source Voltage (V)DS -V     , Drain-to-Source Voltage (V)DS<br>Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br>1000 2.0<br>a ee ee hl =-4.7/<br>apepe p pep eye P E<br>a<br>1.5 PEELE<br>Pot tT | rt LEE LE> an<br>pf opt a<br>T  = 25°CJ<br>100 e ee ee 1.0<br>aee eo e T  = 150°CJ eToy ae<br>e e 0.5 ATPL<br>a AAR eee E EE EE LE<br>Yer ++  V     = -15VDS CE<br>10 0.0<br>PLL | coos won A PPE ev<br>4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>-V     , Gate-to-Source Voltage (V)GS T   , Junction Temperature (°C)J<br>D D<br>-I   , Drain-to-Source Current (A) -I   , Drain-to-Source Current (A)<br>(Normalized)<br>D<br>-I   , Drain-to-Source Current (A)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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2500 20<br>V      = 0V,         f = 1MHzGS  I    = -2.8AD<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds  V     = -24V DS<br>C      = Crss         gd<br>2000 | C      = C     + Coss        ds         gd 16 «LEE<br>NRO EET<br>we | Po<br>s<br>1500 12<br>S“TSS ee j<br>ss<br>1000 8<br>PSE ee ae<br>NOON ae<br>ss<br>500 4<br>p Pe IIE po<br>0 a Pt S| A 0 fy [| [|] rors     SEE FIGURE 12  rc A<br>1 10 100 0 20 40 60<br>-V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>100 OO ee ae  100 $$ A tt HH HH<br>OPERATION IN THIS AREA LIMITED<br>—FF BY RDS(on)<br>a |, Ease<br>a oe<br>10 100us<br>ee ae ea ee<br>S T  = 150°CJ 77 T  = 25°CJ r  10 aTi  NI lil<br>1ms<br>1<br>ff | pene<br>ee alleee ic ts ene<br>oe  T TAJ = 25  C= 150  C° ° ll 10ms |<br> Single Pulse<br>0.10.3 pfoef | 0.6 | 0.9 eeew 1.2A  10.1 A  1  10  100 a<br>-V     , Source-to-Drain Voltage (V)SD -V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>SD I   , Drain Current (A) D-<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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6.0 A TE TE TT Vos ro<br>5.0 PPA EE J<br>P| TNE eT] ty . y DUTT. -<br>4.0 COPE a +<br>Saas .<br>3.0 PT tT dE TE | ENT )t -10V<br> 1<br> 0.1 %<br>P| tT | rE rE TN TT PusFow<br>2.0 PT TT TT tT TN *<br>r | { | | | ft tf ft Fig 10a. Switching Time Test Circuit<br>1.0 P| tT dT rT TE TE | TN VDS<br>Pt tt tT et Ty 90%<br>0.0<br>25 Pt 50 te TT 75 | 100 TT 125 TT 150 |<br>T   , Case TemperatureC (  C)° |<br>|<br>10%<br>VGS |<br>Fig 9. Maximum Drain Current Vs. re <<br>td(on) tr td(off) tf<br>D<br>-I   , Drain Current (A)<br>**----- End of picture text -----**<br>


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 100<br>D = 0.50<br>P CO eee<br>a ee<br> 10 0.20<br>0.10<br>S eeS<br>0.05<br>e r<br>0.02 a eo ae PDM<br> 1<br>0.01 t1<br>SINGLE PULSE t2<br>(THERMAL RESPONSE)<br>Notes:<br>Set et<br>1. Duty factor D = t   / t1 2<br>a 2. Peak T J = P DM x  Z thJA + TA<br>0.1<br>0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>QG .3µF<br>-<br>-10V o QGS T QGD if | D.U.T. +VDS<br>VGS<br>V bee G -3mA (o<br>oO:ANT wl IG ID<br>Charge Current Sampling Resistors<br>**----- End of picture text -----**<br>


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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>® •  Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>00<br>kK<br>®<br>Re •   dv/dt controlled by Rg +<br>•   -<br>•   D.U.T. - Device Under Test<br>‘ , Isp controlled by Duty Factor "D"<br>* Reverse Polarity for P-Channel<br>** Use P-Channel Driver for P-Channel Measurements<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% [ ]<br>**----- End of picture text -----**<br>


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## SO-8  Package Outline 

Dimensions are shown in milimeters (inches) 

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INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>p 6 ag ? H EEE D .189 .1968 4.80 5.00<br>E 0.25 [.010]  A E .1497 .1574 3.80 4.00<br>1 2 3 4<br>e .050  BASIC 1.27  BASIC<br>e1 .025  BASIC 0.635  BASIC<br>ae ° [| — ==—— H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e<br>oe SSS= L .016 .050 0.40 1.27<br>y  0°  8°  0°  8°<br>e1 K x 45°<br>A<br>C<br>y<br>0.10 [.004]<br>erst 8X b A1 | [ : f — 8X L * 8X c 4<br>0.25 [.010]  C A B 7<br>FOOTPRINT<br>NOTES:<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER Pr<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>:      MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. ; QO0g<br>6.46 [.255]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>oO      MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. on<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>     A SUBSTRATE.<br>3X 1.27 [.050] tt 8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## SO-8 Part Marking Information (Lead-Free) 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

XXXX INTERNATIONAL F7101 RECTIFIER LOGO ~~ee~~ 

DATE CODE (YWW) P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y =  LAST DIGIT OF THE YEAR WW =  WEEK A =  ASSEMBLY SITE CODE LOT CODE 

PART NUMBER 

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## SO-8 Tape and Reel 

Dimensions are shown in milimeters (inches) 

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TERMINAL NUMBER 1<br>oo 6 © a)<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) | FEED DIRECTION |<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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 330.00<br>(12.992)<br>  MAX.<br>WAG<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/04 

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- [Supplier page](https://es.farnell.com/infineon/irf7406trpbf/mosfet-p-ch-30v-5-8a-soic/dp/2725903)
---

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