# Power MOSFET, N Channel, 30 V, 8.5 A, 0.022 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2725902RL/)

**URL**: https://novapart.co/products/IRF7403TRPBF/power-mosfet-n-channel-30-v-85-a-0022-ohm-soic
**SKU**: IRF7403TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3530
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:8.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 8.5A |
| Drain Source On State Resistance | 0.022ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725902RL/)

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A<br>A<br>S ay 1 8 = D _<br>S | 2 a 7 D Voss = 30V<br>S “7 3 Ge Pr 6 D<br>cr PSY to<br>G mh 4 i= 5 D R ~ 0022 Ω<br>DS(on) ~ ©:<br>Top View<br>**----- End of picture text -----**<br>


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||~~Parameter~~<br>~~Drain-to-SourceBreakdownVoltage~~<br>~~|~~|~~Min. |~~<br>~~|30~~|~~| Typ.~~<br>~~|--|---|~~|~~|Max. |~~<br>~~|---|~~|~~| Units~~<br>~~|---|v|~~|~~Conditions~~<br>~~Ves=OV,Ip=250A~~|
|---|---|---|---|---|---|---|
||~~Parameter~~<br>~~Drain-to-SourceBreakdownVoltage~~<br>~~|~~<br>~~BreakdownVoltageTemp.Coefficient~~<br>~~|~~|~~Min. |~~<br>~~|30~~<br>~~|—-|o.024~~|~~| Typ.~~<br>~~|--|---|~~<br>~~|o.024|~~|~~|Max. |~~<br>~~|---|~~<br>~~|-—-|~~|~~| Units~~<br>~~|---|v|~~<br>~~|vec|~~|~~Conditions~~<br>~~Ves=OV,Ip=250A~~<br>~~Referenceto25°C,Ip=1mA~~|
|∆<br>Rpson)|~~Drain-to-Source Breakdown Voltage~~<br>~~|~~<br>~~BreakdownVoltageTemp.Coefficient~~<br>~~|~~<br>StaticDrain-to-SourceOn-Resistance<br>~~|---|~~|~~| 30 ~~<br>~~|—-|o.024~~<br>~~|---|~~|~~|-- |---|~~<br>~~|o.024|~~<br>~~|---|-[0.022~~|~~|---|~~<br>~~|-—-|~~<br>~~[0.022~~|~~|---| v | ~~<br>~~|vec|~~|~~Ves = OV, Ip = 250A~~<br>~~Referenceto25°C,Ip=1mA~~<br>~~Ves=10V,Ip=4.0A@~~|
|Rpson)|~~Breakdown Voltage Temp. Coefficient~~<br>~~|~~<br>Static Drain-to-Source On-Resistance<br>~~|---|~~<br>~~|~~<br>~~GateThresholdVoltage~~<br>~~|~~|~~| —- |o.024~~<br>~~|---|~~<br>~~|—-|~~|~~|o.024|~~<br>~~|---|-[0.022~~<br>~~|—|o.035~~|~~| -—- |~~<br>~~[0.022~~<br>~~|o.035~~|Ω<br>~~| vec | ~~<br>~~[|---|~~<br>~~V_|~~|~~Reference to 25°C, Ip = 1mA~~<br>~~Ves=10V,Ip=4.0A@~~<br>~~Ves=4.5V,Ip=3.44®~~|
|||~~|---|~~<br>~~|—-|~~<br>~~|1.0~~|~~|---| - [0.022~~<br>~~|—|o.035~~<br>~~|—-[|---|~~|~~[0.022~~<br>~~|o.035~~<br>~~[|---|~~||~~Ves = 10V, Ip = 4.0A @~~<br>~~Ves=4.5V,Ip=3.44®~~<br>~~Vos=Ves,Ip=250uA~~|
||~~|~~<br>~~GateThresholdVoltage~~<br>~~|~~<br>~~ForwardTransconductance~~<br>~~|3.4|/—-|—-|~~|~~| —- |~~<br>~~|1.0~~<br>~~|3.4|/—-|—-|~~|~~| — |o.035~~<br>~~|—-[|---|~~<br>~~|3.4|/—-|—-|~~|~~|o.035~~<br>~~[|---|~~<br>~~|3.4|/—-|—-|~~|~~[|---|~~<br>~~V_|~~<br>~~|3.4|/—-|—-|s|~~|~~Ves = 4.5V, Ip = 3.44 ®~~<br>~~Vos=Ves,Ip=250uA~~<br>~~Vps=15V,Ip=4.0A~~|
|||~~Gate Threshold Voltage~~<br>~~|~~<br>~~ForwardTransconductance~~<br>~~|3.4|/—-|—-|~~<br>|<br>~~|~~|~~| 1.0 ~~<br>~~|3.4|/—-|—-|~~<br>~~|—|~~|~~|—- [|---|~~<br>~~|3.4|/—-|—-|~~<br>~~|~~<br>~~|~~|~~[|---|~~<br>~~|3.4|/—-|—-|~~<br>~~1.0|~~|~~[|---|~~<br>~~V_| ~~<br>~~|3.4|/—-|—-|s|~~|~~Vos= Ves, Ip = 250uA~~<br>~~Vps=15V,Ip=4.0A~~<br>~~Vos=24V,Ves=OV~~|
||<br>Dss<br>loss|~~Forward Transconductance~~<br>~~|3.4|/—-|—-|~~<br>|<br>~~|~~<br>Drain-to-S<br>Leakage<br>C<br>t<br>~~rain-to-sourceLeakage~~<br>~~Curren~~<br>~~|~~<br>~~Gate-to-SourceForwardLeakage~~<br>~~|~~|~~|3.4|/—-|—-|~~<br>~~|—|~~<br>~~|||~~|~~|3.4|/—-|—-|~~<br>~~|~~<br>~~|~~<br>~~||~~|~~|3.4|/—-|—-|~~<br>~~1.0|~~<br>~~25|~~|~~|3.4|/—-|—-| s | ~~<br>A<br>~~|~~<br>~~Hy~~<br>~~|~~nA|~~Vps = 15V, Ip = 4.0A~~<br>~~Vos=24V,Ves=OV~~<br>~~Vos=DAV,Vos=ov,Ty=125°C~~|
|||~~| — |~~<br>~~|||~~<br>~~|—--|~~|~~|~~<br>~~| ~~<br>~~||~~<br>~~|—-|~~|~~1.0 |~~<br>~~25|~~<br>~~|100|~~||~~Vos = 24V, Ves = OV~~<br>~~Vos=DAV,Vos=ov,Ty=125°C~~<br>~~Ves=20V~~|
|loss<br>~~[Qo__|~~<br>~~Qs~~|~~rain-to-source Leakage~~<br>~~Curren~~<br>~~|~~<br>~~Gate-to-SourceForwardLeakage~~<br>~~|~~<br>~~Gate-to-SourceReverseLeakage~~<br>~~|~~<br>|~~| ||~~<br>~~|—--|~~<br>~~|—-|~~|~~|| ~~<br>~~|—-|~~<br>~~|—|-100~~|~~25 |~~<br>~~|100|~~<br>~~|-100|~~|~~|~~<br>~~Hy~~<br>~~|~~ nA<br>~~|~~<br>~~**|**~~|~~Vos = DAV, Vos = ov, Ty = 125°C~~<br>~~Ves=20V~~<br>Ves=-20V|
||~~Gate-to-Source Forward Leakage~~<br>~~|~~<br>~~Gate-to-SourceReverseLeakage~~<br>~~|~~<br>~~__|TotalGateCharge~~<br>~~**|**~~<br>|~~| —-- |~~<br>~~|—-|~~<br>~~**|**—-~~~~**|**~~|~~| —- |~~<br>~~|—|-100~~<br>~~**|**—|~~|~~| 100 |~~<br>~~|-100|~~<br>~~|57~~~~**|**~~||~~Ves = 20V~~<br>Ves=-20V<br>lp=4.0A|
|~~[Qo__|~~<br>~~Qs|~~|~~Gate-to-SourceReverseLeakage~~<br>~~|~~<br>~~__|TotalGateCharge~~<br>~~**|**~~<br>~~Gate-to-SourceCharge~~|~~|—-|~~<br>~~**|**—-~~~~**|**~~<br>~~—-~~|~~|—|-100~~<br>~~**|**—|~~<br>~~-—|~~|~~|-100|~~<br>~~|57~~~~**|**~~<br>~~|6.8~~|~~|~~<br>~~**|**~~<br>nc<br>|<br>~~|~~|Ves = -20V<br>lp = 4.0A<br>| Vps =24V<br>|<br>~~Ves=10V,SeeFig.~~<br>~~6and12 ©~~<br>Vo=18|
|~~[Qo __|~~<br>~~Qs|~~<br>~~lQgq_—_—'|,~~|~~Gate-to-Source Reverse Leakage~~<br>~~|~~<br>~~__|TotalGateCharge~~<br>~~**|**~~<br>~~Gate-to-SourceCharge~~<br>~~Gatte-to-Drain("Miller")Charge~~<br>~~|~~|~~| —- |~~<br>~~**|**—-~~~~**|**~~<br>~~—-~~<br>~~|—-|~~|~~| — |-100~~<br>~~**|**—|~~<br>~~-—|~~<br>~~|-—-|~~|~~|-100 |~~<br>~~|57~~~~**|**~~<br>~~|6.8~~<br>~~|18|~~|||
|~~__|~~<br>~~Qs | ~~<br>~~lQgq_—_—'|,~~<br>~~fi~~|~~__| Total Gate Charge~~<br>~~**|**~~<br> ~~Gate-to-Source Charge~~<br>~~Gatte-to-Drain("Miller")Charge~~<br>~~|~~<br>~~Turn-OnDelayTime~~|~~**|**—- ~~~~**|**~~<br>~~—-~~<br>~~|—-|~~<br>~~0~~|~~**|**— |~~<br>~~-— |~~<br>~~|-—-|~~<br>~~0~~|~~| 57 ~~~~**|**~~<br>~~| 6.8~~<br>~~|18|~~<br>~~[=~~|||
|~~lQgq_—_—'|, ~~<br>~~fi~~|~~Gatte-to-Drain ("Miller") Charge~~<br>~~|~~<br>~~Turn-OnDelayTime~~<br>~~RiseTime~~<br>~~Turn-Off~~|~~| —- |~~<br>~~0~~|~~| -—- |~~<br>~~0~~<br>~~||]~~|~~| 18 |~~<br>~~[=~~<br>~~||]~~|~~|~~<br> |<br>~~[=] ~~"*<br>|<br>~~[=]~~<br>~~|~~|Ω<br>Ω,<br>~~Ves = 10V, See Fig.~~<br>~~6 and 12 ©~~<br>Vo = 18<br>| to =4.0<br>|<br>| Ro=80<br>|<br>~~|Ro= 37~~<br>~~SeeFig. 10~~|
|~~fi~~|~~Turn-OnDelayTime~~<br>~~RiseTime~~<br>~~—SS~SCS~~<br>~~Turn-Off~~<br>~~Delay Time~~<br>~~Fall~~|~~0~~<br>~~—SS~SCS~~<br>~~=z~~|~~0~~<br>~~—SS~SCS~~<br>~~||]~~<br>~~=z[=]~~|~~[=~~<br>~~—SS~SCS~~<br>~~||]~~<br>~~[=]~~|||
|~~fi~~|~~Turn-On Delay Time~~<br>~~RiseTime~~<br>~~Turn-Off~~<br>~~Delay Time~~<br>~~FallTime~~|~~0~~<br>~~=z~~<br>~~[40~~|~~0 ~~<br>~~||]~~<br>~~=z[=]~~<br>~~[40 [=]~~|~~[=~~<br>~~||] ~~<br>~~[=]~~<br>~~[=]~~|||
||~~Delay Time~~<br>~~Fall~~ ~~Time~~|~~=z~~<br>~~[40~~|~~=z [=]~~<br>~~[40 [=]~~|~~[=]~~<br>~~[=]~~|||
|Lp|~~Time~~<br>Internal Drain Inductance|~~[40~~<br>—|~~[40 [=]~~<br>,25|~~[=]~~<br>;—|~~[=]~~<br>~~|~~<br>nH<br>|<br>|<br>~~|~~|S<br>D<br>G<br>~~| Ro= 37~~<br>~~See Fig. 10~~<br>.<br>| Between lead tip<br>)<br>|<br>| and center ofdie contact<br>|<br>Vas=OV|
|Ls|Internal Source Inductance<br>~~InputCapacitance~~<br>~~|~~|— ;<br>~~|—--~~|; 40<br>~~|1200|~~|;—<br>~~|—-|~~|||
|~~Ciss~~|~~InputCapacitance~~<br>~~|~~<br>~~OutputCapacitance~~<br>~~[==~~|~~|—--~~<br>~~[==[460~~|~~|1200|~~<br>~~[460[==]~~|~~|—-|~~<br>~~[==]~~|~~|~~<br>~~[==]~~ pF<br>||Vas = OV<br>|Vos<br>= 25v<br>|<br>~~f=1.0MHZ,SeeFig.5~~<br>||
|~~Ciss~~|~~Input Capacitance~~<br>~~|~~<br>~~OutputCapacitance~~<br>~~[==~~|~~| —--~~<br>~~[==[460~~|~~|1200 |~~<br>~~[460[==]~~|~~| —- |~~<br>~~[==]~~|||
|~~Ciss~~|~~Output Capacitance~~<br>~~[==~~<br>~~ReverseTransferCapacitance~~|~~[== [460~~<br>~~———|~~|~~[460 [==]~~<br>~~|160|~~|~~[==]~~<br>~~|——~~|||



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≤ ≤ 

ISD ≤ 4.0A, di/dt ≤ 180A/Us, Vpp ≤ Verypss; ® Surface mounted on FR-4 board, t ≤ ≤ 

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1000                    VGS 1000                    VGS<br> TOP           15V  TOP           15V<br>                   10V                    10V<br>                   8.0V                    8.0V<br>                   7.0V                   6.0V nc |                    7.0V                   6.0V nc<br>                   5.5V                    5.5V<br>                   5.0V                    5.0V<br> BOTTOM   4.5V  BOTTOM   4.5V<br>100 peel UUegece | 100 Epul|LonBe<br> 4.5V<br> 4.5V<br>SS eaniiaaaay’ aamailll mame en) Z c<br>Pl ogA BREE = QE ll<br>10 aN Al 10 ENP<br>eyfn en) ARR |<br>1 |gLM | |  T   = 25°C saeerutse J  wor A 1 |"A| igTp  T   = 150°C atee J  ruse mone<br>0.01 0.1 1 10 100 0.01 0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br>2.0<br> 1000 SS T TL<br>oe<br>oSsSeeeeee 1.5 PEEL EEE Ee |<br>°<br>Pt tt tT | tT T  = 25  CJ | tT TT a —<br>Saeene eeeeee EEL bet<br> 100 1.0<br>ft eee T  = 150  CJ ° tt ert<br>=>Zceaeaeeee De<br>7, ee<br>7 EEE 0.5 PEPE<br>An [EE] [eae] EE EE EE<br>ttt ttt  EE V      = DS E a<br> 10 20µs PULSE WIDTH 0.0 PEEP<br>4 titi} 5 6 7 8 9 10 -60 -40 -20 0 20 40 ea 60 EE 80 100 120 ie 140 160<br>V     , Gate-to-Source Voltage (V)GS T   , Junction Temperature (°C)J<br>I   , Drain-to-Source Current (A)D I   , Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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2400<br>V      = 0V,         f = 1MHzGS<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds<br>C      = Crss         gd<br>2000 C      = C     + Coss        ds         gd<br>| s te<br>1600<br>cr el<br>NO PARE<br>ss<br>1200<br>PeN<br>800<br>SU<br>ee ss ee<br>ee<br>400<br> Sl<br>ao<br>0 a ee ll<br>1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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20<br> I    = 4.0AD<br> V     = 24V DS<br>16<br>p f<br>12 SaeeeeeEeZee<br>LZ<br>EEA Z<br>8 rT TT TAT<br>4 PP ATy<br>vaadull<br>[7<br>    SEE FIGURE 12<br>0 Anan<br>0 10 20 30 40 50 60<br>Q   , Total Gate Charge (nC)G<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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100 aee  100 oe OPERATION IN THIS AREA LIMITED<br>_ BY RDS(on) Hitt<br>oe ee oe a a ee Se<br>eee p= 4=EbR ut sete tt  TIT<br>10 100us<br>| ert acNO SAL<br>SS T  = 150°CJ T  = 25°CJ a  10 LUTE ERMINE<br>1ms<br>1 fe y KS LT<br>_—— | ) SS<br>== 2S H  T TAJ = 25  C= 150  C° ° S H 10ms<br>0.1 oepoy ee| | ow A  1 I  Single Pulse T T | !<br>0.0 SHE 0.5 1.0 1.5 EP 2.0 2.5 3.0 0.1 H  1 aan  10  100<br>V     , Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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10.0<br>+<br>pt tT tT tT tT ty aaVe ns D.U.T. [ -<br>8.0<br>mit | PE tt<br>PINE EE TT tov<br>≤ 1<br>≤ 0.1 %<br>PEPE =“<br>6.0 EEE NY =<br>4.0<br>VDS<br>pit? RSE Fig 90%  10a. Switching Time Test Circuit<br>2.0 pi te tetT e t tTN X—\<br>0.0 aPit tt | | | tt 10% /\ \<br>25 50 75 100 125 150<br>° VGS<br>T   , Case TemperatureC (  C)<br>td(on) tr td(off) tf<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


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 100<br>D = 0.50<br>P a COeee<br>a | ee |<br> 10 0.20<br>0.10<br>0.05<br>—<br>SMart 0.02 memise" Zoeeeanil emis tian P c DM ee<br> 1<br>0.01 t1<br>SINGLE PULSE t2<br>(THERMAL RESPONSE)<br>Notes:<br>Seti 1et ee<br>1. Duty factor D = t   / t1 2<br>a 2. Peak T J = P DM x  Z thJA + TA<br>0.1<br>0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>fC QG * .3µF<br>a D.U.T. +-VDS<br>QGS QGD<br>ale oe yy.<br>VGS<br>VG 3mA Ty<br>IG ID<br>Charge Current Sampling Resistors<br>**----- End of picture text -----**<br>


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D.U.T + Circuit Layout Considerations<br>—_    •  Low Stray Inductance<br>®  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>00<br>Kk<br>Rg •   dv/dt controlled by Rg +<br>•   -<br>•<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent e<br>Ripple  ≤ 5%<br>**----- End of picture text -----**<br>


## SO-8  Package Outline 

Dimensions are shown in milimeters (inches) 

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INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>E a 6 0.25 [.010] H A oo DE .189.1497 .1968.1574 4.803.80 5.004.00<br>1 2 3 4<br>e .050  BASIC 1.27  BASIC<br>e1 .025  BASIC 0.635  BASIC<br>H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X q e d bk +4 L .016 .050 0.40 1.27<br>ee y  0°  8°  0°  8°<br>e1 K x 45°<br>A<br>C<br>y<br>0.10 [.004]<br>Saal 8X b A1 e fny e 8X L 8X c<br>0.25 [.010]  C A B 7<br>FOOTPRINT<br>NOTES:<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER aie<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>: | Q0G0<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>6.46 [.255]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>     A SUBSTRATE.<br>: 3X 1.27 [.050] oe 8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## SO-8 Part Marking Information (Lead-Free) 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

XXXX INTERNATIONAL F7101 RECTIFIER LOGO ~~ee~~ 

DATE CODE (YWW) 

P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y =  LAST DIGIT OF THE YEAR WW =  WEEK A =  ASSEMBLY SITE CODE LOT CODE 

PART NUMBER 

## SO-8 Tape and Reel 

Dimensions are shown in milimeters (inches) 

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TERMINAL NUMBER 1<br>oO Oo of<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) ed FEED DIRECTION |<br>**----- End of picture text -----**<br>


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NOTES:<br>**----- End of picture text -----**<br>


1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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 330.00<br>(12.992)<br>  MAX.<br>PY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


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NOTES :<br>**----- End of picture text -----**<br>


1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/04 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF7403TRPBF/power-mosfet-n-channel-30-v-85-a-0022-ohm-soic)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf7403trpbf/mosfet-n-ch-30v-8-5a-soic/dp/2725902RL)
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