# Power MOSFET, N Channel, 20 V, 6.8 A, 0.035 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2781115RL/)

**URL**: https://novapart.co/products/IRF7402TRPBF/power-mosfet-n-channel-20-v-68-a-0035-ohm-soic
**SKU**: IRF7402TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6380
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Channel Type | N Channel |
| Power Dissipation | 2.5W |
| Drain Source On State Resistance | 0.035ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781115RL/)

PD - 95202 

## IRF7402PbF 

HEXFET[®] Power MOSFET 

Generation V Technology Ultra Low On-Resistance : N-Channel MOSFETVery Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Lead-Free : 

**==> picture [227 x 223] intentionally omitted <==**

**----- Start of picture text -----**<br>
A<br>A<br>S 1 8 D<br>S “A 2 Te 7 D VDSS = 20V<br>S 3 6 D<br>G 4 5 D R  = 0.035Ω<br>DS(on)<br>Top View<br>-_<br>SO-8<br>**----- End of picture text -----**<br>


## **Description** 

Fifth Generation HEXFET[®] power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs  are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The SO-8 has been modified through a customized leadframe for enhanced thermal characterstics and multiple-die capability making it ideal in a variety of power   applications.  With these improvements, multiple devices  can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared or wave soldering techniques. Power dissipation of greater than 0.8 W is possible in a typical PCB mount  application. 

## **Absolute Maximum Ratings** 

|**Parameter**<br>**Max.**<br>**Units**<br>ID@ TA= 25°C<br>Continuous Drain Current, VGS@ 4.5V<br>6.8<br>ID@ TA= 70°C<br>Continuous Drain Current, VGS@ 4.5V<br>5.4<br>A<br>IDM<br>Pulsed Drain Current<br>54<br>PD@TA= 25°C<br>Power Dissipation<br>2.5<br>W<br>PD@TA= 70°C<br>Power Dissipation<br>1.6<br>(ooo<br>~~—_——————————~~<br>~~es i~~<br>~~ee~~<br>~~ee~~<br>~~oo~~||
|---|---|
|Linear DeratingFactor<br>0.02<br>W/°C<br>VGS<br>Gate-to-Source Voltage<br>± 12<br>V<br>dv/dt<br>Peak Diode Recoverydv/dt<br>5.0<br>V/ns<br>TJ,TSTG<br>Junction and Storage Temperature Range<br>-55  to + 150<br>°C<br>~~a~~<br>~~Ce~~<br>~~a~~||
|**Thermal Resistance**||
|**Parameter**<br>**Max.**<br>**Units**<br>aes||
|RθJA<br>Maximum Junction-to-Ambient<br>50<br>°C/W||
|www.irf.com<br>1||
|9/30/04||



## **Thermal Resistance** 

## IRF7402PbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~Bs~~<br>~~es~~|**Parameter**<br>~~rs~~<br>~~ss~~|**Min. **<br>~~rsOs~~<br>~~ss~~|**Typ. **<br>~~ss~~<br>~~ss~~|**Max. **<br>~~ss~~<br>~~ss~~|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~Bs~~<br>~~es~~<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~rs~~<br>~~ss~~<br>~~se~~|20<br>~~rsOs ~~<br>~~ss~~<br>~~se~~|–––<br> ~~ss~~<br>~~ss~~<br>~~ss~~|–––<br>~~ss~~<br>~~ss~~<br>~~ss~~|V|VGS= 0V, ID= 250µA|
|∆V(BR)DSS/∆TJ <br>~~es~~<br>~~es~~|Breakdown Voltage Temp. Coefficient<br>~~ss~~<br>~~se~~|–––<br>~~ss ~~<br>~~se~~|0.024<br> ~~ss~~<br>~~ss~~|–––<br>~~ss~~<br>~~ss~~|V/°C|Reference to 25°C, ID= 1mA|
|RDS(on)<br>~~es~~<br>~~a~~<br>a|Static Drain-to-Source On-Resistance<br>~~se~~<br>~~a~~<br>|–––<br>~~se ~~<br>~~a~~<br>|<br>||~~ss~~<br>~~a~~|0.035<br>~~ss~~<br>~~a~~|Ω<br>~~a~~|VGS= 4.5V, ID= 4.1A<br>~~a~~|
|||–––<br>~~a~~<br>|<br>||~~a~~|0.050<br>~~a~~||VGS= 2.7V, ID= 3.5A<br>~~a~~|
|VGS(th)<br>a<br>~~a~~|Gate Threshold Voltage<br>a<br>~~ss~~|0.70<br>|<br>|<br>~~ss~~|–––<br>~~Gs~~|–––|V|VDS= VGS, ID= 250µA|
|gfs<br>~~a~~|Forward Transconductance<br>~~ss~~|6.1<br>~~ss~~|–––<br>~~Gs~~|–––|S|VDS= 10V, ID= 1.9A|
|IDSS<br>~~a~~<br>~~ee~~<br>~~ee~~|Drain-to-Source Leakage Current<br>~~ss~~<br>~~ee~~<br>~~ee~~|–––<br>~~ss~~<br>~~ee~~<br>~~||~~|–––<br>~~Gs~~<br>~~ee~~<br>~~|~~|1.0<br>~~ee~~|µA<br>~~ee~~<br>~~Po~~<br>~~ee~~|VDS= 16V, VGS= 0V<br>~~ee~~<br>~~Po~~|
|||–––<br>~~ee~~<br>~~||~~<br>~~ee~~<br>|–––<br>~~ee~~<br>~~|~~<br>~~ee~~|25<br>~~ee~~<br>~~ee~~||VDS= 16V, VGS= 0V, TJ= 125°C<br>~~ee~~<br>~~Po~~|
|IGSS<br>~~cers~~<br>~~ee~~<br>~~Se~~|Gate-to-Source Forward Leakage<br>~~cers~~<br>~~ee~~<br>~~Se~~|–––<br>~~| |~~<br>~~cers~~<br>~~ee~~<br>~~ee~~|–––<br>~~|~~<br>~~cers~~<br>~~ee~~|100<br>~~cers~~<br>~~ee~~|nA<br>~~Po~~<br>~~cers~~<br>~~ee~~<br>~~Po~~|VGS= 12V<br>~~Po~~<br>~~cers~~<br>~~Po~~|
||Gate-to-Source Reverse Leakage<br>~~cers~~<br>~~ee~~<br>~~Se~~|–––<br>~~cers~~<br>~~ee~~<br>~~ee~~|–––<br>~~cers~~<br>~~ee~~|-100<br>~~cers~~<br>~~ee~~||VGS= -12V<br>~~cers~~<br>~~Po~~|
|Qg<br>~~ee~~<br>~~Se~~<br>~~es~~|Total Gate Charge<br>~~ee ~~<br>~~Se~~<br>|–––<br>~~ee ~~<br> ~~ee~~<br>~~ee~~|14<br> ~~ee~~|22<br>~~ee~~|nC<br>~~ee~~<br>~~Po~~|ID= 3.8A<br>VDS= 16V<br>VGS= 4.5V, See Fig. 6 and 12<br>~~Po~~<br>®|
|Qgs<br>a~~es~~<br>~~es~~<br>~~es~~|Gate-to-Source Charge<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~|2.0<br>~~es~~|3.0|||
|Qgd<br>~~es~~<br>~~es~~|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––<br>~~ee~~|6.3|9.5|||
|td(on)<br>~~es ~~<br>~~es~~<br>es|Turn-On Delay Time<br> ~~ee~~|–––<br>~~ee~~|5.1|–––|ns|VDD= 10V<br>ID= 3.8A<br>RG= 6.2Ω<br>RD= 2.6Ω<br>®<br>~~®~~|
|tr<br> <br>~~es~~<br>es<br>es|Rise Time<br> ~~ee~~|–––|47|–––|||
|td(off)<br>es<br>es<br>~~es~~|Turn-Off Delay Time|–––|24|–––|||
|tf<br>es<br>~~es~~<br>~~es~~|Fall Time|–––|32|–––|||
|Ciss<br>~~es~~<br>~~es~~<br>es|Input Capacitance|–––|650|–––|pF|VGS= 0V<br>VDS= 15V<br>ƒ = 1.0MHz, See Fig. 5<br>~~®~~|
|Coss<br>~~es~~<br>es<br>ee|Output Capacitance<br>~~ee~~|–––<br>~~ee~~|300<br>~~ee~~|–––|||
|Crss<br>es<br>ee|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~|150<br>~~ee~~|–––|||



## **Source-Drain Ratings and Characteristics** 

|~~ne~~|**Parameter**<br>~~ee~~|**Min. **<br>~~ee~~|**Typ. **<br>~~ee~~|**Max. **<br>~~ee~~|**Units**<br>~~ee~~|**Conditions**<br>~~ee~~|
|---|---|---|---|---|---|---|
|IS<br>~~ne~~|Continuous Source Current<br>(Body Diode)<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|2.5<br>~~ee~~|A<br>~~ee~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>S<br>D<br>G<br>~~ee~~|
|ISM<br>~~ne~~|Pulsed Source Current<br>(BodyDiode)<br>~~ee ~~|–––<br> ~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|54<br>~~ee~~<br>~~ee~~|||
|VSD<br>~~a ee~~<br>~~ee~~|Diode Forward Voltage<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.2<br>~~ee~~<br>~~ee~~<br>ee|V<br>~~ee~~|TJ= 25°C, IS= 3.8A, VGS= 0V<br>~~ee~~|
|trr<br>~~ee~~<br>Rs|Reverse Recovery Time<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|51<br>~~ee~~<br>~~ee~~|77<br>~~ee~~<br>ee|ns|TJ= 25°C, IF= 3.8A<br>di/dt = 100A/µs<br>®|
|Qrr<br>~~ee~~<br>Rs|Reverse Recovery Charge<br>~~ee~~|–––<br>~~ee~~|69<br>~~ee~~|100<br>ee|nC||



## **Notes:** 

- © Repetitive rating;  pulse width limited by @ Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. (See fig. 11) 

- 0 ISD ≤ 3.8A, di/dt ≤ 96A/µs, VDD ≤ V(BR)DSS,[®] TJ ≤ 150°C 

When mounted on 1 inch square copper board,  t<10 sec 

- © This data sheet has curves & data from IRF7601 

www.irf.com 

2 

## IRF7402PbF 

**==> picture [204 x 477] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>                   VGS<br> TOP           7.5V<br>                   5.0V<br>                   4.0V Eee +<br>                   3.5V<br>                   3.0V Coo<br>                   2.5V<br>                   2.0V<br> BOTTOM   1.5V LAA<br>Y ga<br>10 a Aneel<br>A Zaha See...<br>Zann ee<br>1 PePE<br>a<br>a<br>1.5V  20µs PULSE WIDTH<br>0.1 ————Tif  T   = 25°CJ<br>0.1 1 10<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics<br>100<br>popeseeee eee<br>——a<br>ee ee —_<br>10<br>T  = 150°CJ<br>a—— _a—a—————<br>7 a<br>ey A a<br>As T  = 25°CJ ean<br>1<br>ff, |<br>> eeeee<br>DO(iee eea aeee eeea<br> V     = 10VDS<br>0.1 P P  20µs PULSE WIDTH<br>1.5 2.0 2.5 3.0 3.5<br>V     , Gate-to-Source Voltage (V)GS<br>I   , Drain-to-Source Current (A)D<br>D<br>I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**==> picture [204 x 197] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>                   VGS<br> TOP           7.5V<br>                   5.0V<br>                   4.0V Eee +<br>                   3.5V                   3.0V coon oo<br>                   2.5V<br>                   2.0V BOTTOM   1.5V LZ<br>>aaa<br>10 | G F<br>be A424. 68h eee ee ee<br>Za eee<br>1 t e el e 1.5V ee<br>o o<br>re<br> 20µs PULSE WIDTH<br>Crill  T   = 150°CJ |<br>0.1<br>0.1 1 10<br>V     , Drain-to-Source Voltage (V)DS<br>I   , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

**==> picture [213 x 197] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0<br> I    = 3.8AD<br>Pere [aaa]<br>1.5 Dalar | J<br>ct er<br>1.0 Ler<br>eT EL<br>an<br>0.5 SEE<br>PEPELE E  V      = 4.5V  E GS T<br>0.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T   , Junction Temperature (°C)J<br>(Normalized)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

www.irf.com 

3 

## IRF7402PbF 

**==> picture [208 x 197] intentionally omitted <==**

**----- Start of picture text -----**<br>
1200<br>V      = 0V,         f = 1MHzGS<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds<br>1000 T_T]aa C      = CC      = C     + Crss         gdoss        ds         gd<br>C iss<br>800 ~ SE TT TT Titty UU TT TTT<br>C oss<br>aPLL LTT<br>600 NE |<br>400 NCCE ooh<br>C rss<br>a |<br>200<br>el ell<br>e e Tell<br>0<br>1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

**==> picture [202 x 197] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>re ee ee ee<br>10<br>See aGeee<br>T  = 150°CJ<br>fay dee T  = 25°CJ  ee on<br>7 1) o n on oe<br>1<br>fpf | |<br>Ss ee ee eee<br>—————HAA<br>0.1 Pet ft ft V      = 0V GS<br>0.4 0.8 1.2 1.6 2.0 2.4<br>V     , Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**==> picture [202 x 471] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br> I    = 3.8AD<br> V     = 16V DS<br>eee[it [til<br>8 PAH<br>6<br>Peet PLYF Z<br>4 Pott LA<br>acca ance<br>2 PTTAP<br>TT<br> FOR TEST CIRCUIT<br>0 f | | | ATTTT     SEE FIGURE 9<br>0 4 8 12 16 20 24<br>Q   , Total Gate Charge (nC)G<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br> 1000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>PT YT TT<br> 100 AB |<br>Padmtsesti ee 100us s<br> 10 Sa t ttt<br>Se lll<br>1ms<br>SS SEps tes ett<br>°<br>ce  T TCJ = 25  C= 150  C° ee 10ms e al<br> Single Pulse<br> 1 ea e e ee eelilll<br> 1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

www.irf.com 

4 

## IRF7402PbF 

**==> picture [201 x 193] intentionally omitted <==**

**----- Start of picture text -----**<br>
8.0 iti ttt | tt<br>6.0<br>PNT EE<br>PNET<br>PEN<br>4.0 ~<br>2.0 COCO<br>0.0<br>25 50 75 100 125 150<br>PEt T   , Case TemperatureCC ee (  C)°° yy<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


**==> picture [404 x 469] intentionally omitted <==**

**----- Start of picture text -----**<br>
RD<br>VDS<br>iti ttt | tt VGS aan<br>D.U.T.<br>6.0 RG<br>PNT EE Y +- VDD<br>PNET<br>4.5V<br>PEN :<br>4.0 ~ Pulse Width ≤ 1 µs<br>Duty Factor ≤ 0.1 %<br>Fig 10a.   Switching Time Test Circuit<br>2.0<br>VDS<br>COCO 90% —<br>0.0<br>25 50 75 100 125 150<br>PEt T   , Case TemperatureCC ee (  C)°° yy Y \/<br>10%<br>/\\<br>Fig 9.   Maximum Drain Current Vs. VGS<br>Ambient Temperature td(on) tr td(off) tf<br>Fig 10b.   Switching Time Waveforms<br> 100<br>D = 0.50<br>P hhneer ti<br> 10 0.20<br>0.10<br>0.05<br>= eeeSs<br>PDM<br>0.02<br> 1<br>0.01 t1<br>P ee td t 2<br>Notes:<br>SINGLE PULSE<br>(THERMAL RESPONSE) 1. Duty factor D = t   / t1 2<br>0.1 allt e an PLUCEITTILI| 2. Peak TJ= P DM x  ZthJC + TC<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

www.irf.com 

5 

## IRF7402PbF 

**==> picture [391 x 161] intentionally omitted <==**

**----- Start of picture text -----**<br>
Current Regulator<br>Same Type as D.U.T.<br>50KΩ |<br>|<br>12V .2µF<br>QG | l .3µF [ ; ||<br>\<—— — __ ooLL iit +<br>4.5V D.U.T. -VDS<br>a QGS *<_ QGD —»<br>VGS<br>VG 3mA<br>Ort.<br>IG ID<br>Charge Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 12a.** Basic Gate Charge Waveform 

**Fig 12b.** Gate Charge Test Circuit 

**==> picture [228 x 163] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.1 /<br>oe ee<br> ( Ω )  ( Ω )<br> , Drain-to-Source On Resistance  , Drain-to-Source On Resistance<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance Vs. Drain Current 

**Fig 14.** Typical On-Resistance Vs. Gate Voltage 

www.irf.com 

6 

## IRF7402PbF 

## SO-8  Package Outline 

Dimensions are shown in milimeters (inches) 

**==> picture [291 x 270] intentionally omitted <==**

**----- Start of picture text -----**<br>
INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>- ee b .013 .020 0.33 0.51<br>8 7 a 6 5 es ——o c .0075 .0098 0.19 0.25<br>E 6 0.25 [.010] H A PEER DE .189.1497 .1968.1574 4.803.80 5.004.00<br>1 2 3 4 rt e .050  BASIC 1.27  BASIC<br>_ ttt<br>> e 1 .025  BASIC 0.635  BASIC<br>H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X Od e b esee L .016 .050 0.40 1.27<br>y  0°  8°  0°  8°<br>es<br>- e1 A K x 45°<br>C<br>y<br>0.10 [.004]<br>a ioe 8X b m A1 ic iLf 8X L hy 8X c<br>0.25 [.010]  C A B 0 7<br>FOOTPRINT<br>NOTES:<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER n e<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>:      MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. | OO0d<br>6.46 [.255]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>O      MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. oan<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>     A SUBSTRATE.<br>oO 3X 1.27 [.050] oe 8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## SO-8 Part Marking Information (Lead-Free) 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

DATE CODE (YWW) P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y =  LAST DIGIT OF THE YEAR ron’ XXXX WW =  WEEK INTERNATIONAL F7101 A =  ASSEMBLY SITE CODE RECTIFIER LOT CODE LOGO ~~ee~~ PART NUMBER 

www.irf.com 

7 

## IRF7402PbF 

## SO-8 Tape and Reel 

Dimensions are shown in milimeters (inches) 

**==> picture [174 x 114] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>ood 0) fF<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) ed FEED DIRECTION |<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

**==> picture [154 x 68] intentionally omitted <==**

**----- Start of picture text -----**<br>
 330.00<br>(12.992)<br>  MAX.<br>PY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/04 

www.irf.com 

8 



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---

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