# Dual MOSFET, P Channel, 30 V, 30 V, 8 A, 8 A, 0.017 ohm

![Product image](https://novapart.co/image/farnell:2468014/)

**URL**: https://novapart.co/products/IRF7328TRPBF/dual-mosfet-p-channel-30-v-8-a-0017-ohm
**SKU**: IRF7328TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.7030
**Stock**: 10+

## Description

Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage V

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (17-Jan-2023) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | SOIC |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 2W |
| Power Dissipation P Channel | 2W |
| Drain Source Voltage Vds N Channel | 30V |
| Drain Source Voltage Vds P Channel | 30V |
| Continuous Drain Current Id N Channel | 8A |
| Continuous Drain Current Id P Channel | 8A |
| Drain Source On State Resistance N Channel | 0.017ohm |
| Drain Source On State Resistance P Channel | 0.017ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2468014/)

PD - 95196A 

## IRF7328PbF 

HEXFET[®] Power MOSFET 

Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Available in Tape & Reel Lead-Free 

|**VDSS**|**RDS(on) max**|**ID**|
|---|---|---|
|**-30V**|**DS(on)**<br>21mΩ@VGS= -10V<br>32mΩ@VGS= -4.5V|-8.0A|
|||-6.8A|



## **Description** 

New trench HEXFET[®] Power MOSFETs  from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area. This benefit, combined with the ruggedized  device  design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications. 

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Absolute Maximum Ratings<br>es Parameter Max. Units<br>en VDS Drain-Source Voltage -30 V<br>ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -8.0<br>a ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -6.4 A<br>© IDM Pulsed Drain Current -32<br>Oe PD @TA = 25°C Maximum Power Dissipation 2.0 W<br>Oe PD @TA = 70°C Maximum Power Dissipation 1.3 W<br>                                  Linear Derating Factor                                                                       16                               mW/°C<br>  VGS                                      Gate-to-Source Voltage                                                              ± 20                                  V<br>e TJ , TSTG e Junction and Storage Temperature Range s -55  to + 150 °C<br>**----- End of picture text -----**<br>


**Thermal Resistance** 

**Parameter Max.                           Units** R θ JA Maximum Junction-to-Ambient 62.5                               °C/W ~~a~~ www.irf.com 1 

12/03/10 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|||~~Od~~|~~rs rs~~|~~rs~~|||
|---|---|---|---|---|---|---|
||**Parameter**<br>rs|**Min. **<br>rs<br>~~Od~~<br>~~Ors~~|**Typ. **<br>rs<br>~~rs rs~~<br>~~GG~~|**Max.**<br>rs<br>~~rs~~<br>~~GG~~|**Units**<br>rs<br>~~GG~~|**Conditions**<br>rs|
|V(BR)DSS<br>~~Bo~~|Drain-to-Source Breakdown Voltage<br>~~rs~~<br>~~Bo~~|-30<br>~~Od ~~<br>~~rs~~<br>~~Ors~~|–––<br> ~~rs rs~~<br>~~rs~~<br>~~GG~~<br>~~GG~~|–––<br>~~rs~~<br>~~rs~~<br>~~GG~~<br>~~GG~~|V<br>~~rs~~<br>~~GG~~<br>~~GG~~|VGS= 0V, ID= -250µA<br>~~rs~~|
|∆V(BR)DSS/∆TJ<br>~~Bo~~|Breakdown Voltage Temp. Coefficient<br>~~Gs~~<br>~~Bo~~|––– <br>~~Ors~~<br>~~Gs~~<br>~~REY~~|-0.018 <br>~~GG~~<br>~~Gs~~<br>~~GG~~<br>~~REY~~|–––<br>~~GG~~<br>~~Gs~~<br>~~GG~~<br>~~REY~~|V/°C<br>~~GG~~<br>~~Gs~~<br>~~GG~~<br>|Reference to 25°C, ID= -1mA<br>~~Gs~~<br>~~RK~~|
|RDS(on)<br>~~Bo~~|Static Drain-to-Source On-Resistance<br>~~Bo~~|–––<br>~~REY~~|17<br>~~GG~~<br>~~REY~~|21<br>~~GG~~<br>~~REY~~|mΩ<br>~~GG~~<br><br>~~es~~|VGS= -10V, ID= -8.0A<br>~~RK~~|
|||~~REY~~<br>[—|<br>~~rs rs~~|26.8<br>~~GG~~<br>~~REY~~<br>[—|<br>~~rs~~|32<br>~~GG~~<br>~~REY~~<br>[—|<br>~~rs~~||VGS= -4.5V, ID= -6.8A<br>~~RK~~|
|VGS(th)<br>~~Bo~~|Gate Threshold Voltage<br>~~Bo~~<br>~~rs~~|-1.0<br>~~REY~~<br>~~rs~~<br>~~rs rs~~<br>~~Gre~~|–––<br>~~GG~~<br>~~REY~~<br>~~rs~~<br>~~rs~~<br>~~Gr~~|-2.5<br>~~GG~~<br>~~REY ~~<br>~~rs~~<br>~~rs~~|V<br>~~GG~~<br> <br>~~rs~~<br>~~es~~|VDS= VGS, ID= -250µA<br> ~~RK~~<br>~~rs~~|
|gfs|Forward Transconductance<br>~~rs~~|12<br>~~rs rs~~<br>~~rs~~<br>~~Gre~~|–––<br>~~rs ~~<br>~~rs~~<br>~~Gr~~|–––<br> ~~rs~~<br>~~rs~~|S<br>~~es~~<br>~~rs~~|VDS= -10V, ID= -8.0A<br>~~rs~~|
|IDSS|Drain-to-Source Leakage Current<br>~~ES~~<br>~~|~~|–––<br>~~Gre ~~<br>~~ES~~<br>~~||~~|–––<br> ~~Gr~~<br>~~ES~~<br>~~|~~|-15<br>~~ES~~<br>~~|~~|~~ES~~<br>~~Po~~|VDS= -24V, VGS= 0V<br>~~ES~~<br>~~Po~~|
|||–––<br>~~ES~~<br>~~||~~|–––<br>~~ES~~<br>~~|~~|-25<br>~~ES~~<br>~~|~~||VDS= -24V, VGS= 0V, TJ= 70°C<br>~~ES~~<br>~~Po~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~|~~<br>~~oo~~<br>~~ee~~|–––<br>~~| |~~<br>~~oo~~<br>~~eeee~~|–––<br>~~| ~~<br>~~oo~~<br>~~ee~~|-100<br> ~~| ~~|~~Po~~<br>i<br>~~PO~~|VGS= -20V<br>~~Po~~<br>~~PO~~|
||Gate-to-Source Reverse Leakage<br>~~oo~~<br>~~ee~~<br>~~|~~|–––<br>~~oo~~<br>~~eeee~~<br>+}|–––<br>~~oo~~<br>~~ee~~<br>+}|100<br>+}—||VGS= 20V<br>~~PO~~|
|Qg|Total Gate Charge<br>~~ee ~~<br>~~|~~|–––<br> ~~eeee~~<br>+}<br>ee|52<br>~~ee~~<br>+}<br>ee|78<br>+}—<br>ee|nC<br>~~PO~~|ID= -8.0A<br>VDS= -15V<br>VGS= -10V<br>~~PO~~|
|Qgs|Gate-to-Source Charge<br>~~|~~<br>~~ee~~|–––<br>+}<br>~~ee~~<br>ee|9.8<br>+}<br>~~ee~~<br>ee|–––<br>+}—<br>ee|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~|~~ <br>~~ee~~|–––<br> +}<br>ee <br>~~ee~~<br>ee|8.3<br>+}<br> ee<br>~~ee~~|–––<br>+} —<br>ee<br>~~ee~~|||
|td(on)|Turn-On Delay Time<br>~~ee~~|–––<br>~~ee~~<br>ee<br>ee|13<br>~~ee~~|20||VDD= -15V, VGS= -10.0V<br>ID= -1.0A<br>RG= 6.0Ω<br>RD= 15Ω<br>~~@~~|
|tr|Rise Time<br>~~ee~~<br>~~ee~~|–––<br>ee<br>~~ee~~<br>ee<br>~~ee~~<br>|15<br>~~ee~~|23|||
|td(off)|Turn-Off Delay Time<br>~~ee~~<br>~~ee~~|–––<br>ee<br>~~ee~~<br>~~ee~~<br>~~ee~~|198<br>~~ee~~|297|||
|tf|Fall Time<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>ee|98|147|||
|Ciss|Input Capacitance<br>~~ee ~~<br>~~ee~~|–––<br>~~ee~~<br> ~~ee~~<br>~~ee~~<br>ee<br>ee|2675<br>~~ee~~|–––|pF|VGS= 0V<br>VDS= -25V<br>ƒ = 1.0MHz<br>~~@~~|
|Coss|Output Capacitance<br>~~ee~~|–––<br>ee<br>~~ee~~<br>ee|409<br>~~ee~~|–––|||
|Crss|Reverse Transfer Capacitance|–––<br>ee|262|–––|||



## **Source-Drain Ratings and Characteristics** 

||||~~rd~~|~~es~~|~~es~~||
|---|---|---|---|---|---|---|
|re<br>~~EF~~|**Parameter**<br>re<br>~~EF~~|**Min. **<br>re<br>~~EF~~|**Typ. **<br>re<br>~~rd~~<br>~~aH|~~|**Max.**<br>re<br>~~es~~<br>~~aH|~~|**Units**<br>re<br>~~es~~<br>~~aH|~~|**Conditions**<br>re<br>~~aH|~~<br>~~@~~|
|IS<br>~~EF~~|Continuous Source Current<br>(Body Diode)<br>~~EF~~|~~EF~~|~~rd ~~<br>~~aH|~~|2.0<br> ~~es ~~<br>~~aH|~~|~~es~~<br>~~aH|~~<br>~~es~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>S<br>D<br>G<br>~~aH|~~<br>~~@~~<br>~~es~~|
|ISM<br>~~EF~~<br>~~Rses~~<br>~~Se~~|Pulsed Source Current<br>(BodyDiode)<br>~~EF~~<br>~~es~~|~~EF~~<br>~~es~~<br>~~ss~~|~~aH|~~<br>~~es~~<br>~~ss~~|-32<br>~~aH|~~<br>~~es~~|||
|VSD<br>~~EF~~<br>~~Rses~~<br>~~Se~~<br>~~a~~|Diode Forward Voltage<br>~~EF~~<br>~~es~~<br>~~ened~~|–––<br>~~EF ~~<br>~~es~~<br>~~ss~~<br>ee|–––<br> ~~aH|~~<br>~~es~~<br>~~ss~~<br>eee|-1.2<br>~~aH|~~<br>~~es~~<br>ees|V<br>~~aH|~~<br>~~es~~<br>ee|TJ= 25°C, IS= -2.0A, VGS= 0V<br>~~aH|~~<br>~~@~~<br>~~es~~|
|trr<br>~~Rses~~<br>~~Se~~<br>~~a~~|Reverse Recovery Time<br>~~es~~<br>~~ened~~<br>~~es~~|–––<br>~~es~~<br>~~ss~~<br>ee<br>ee|37<br>~~es~~<br>~~ss~~<br>eee<br>ee|56<br>~~es~~<br>ees|ns<br>~~es~~<br>ee|TJ= 25°C, IF= -2.0A<br>di/dt = -100A/µs<br>~~es~~<br>@|
|Qrr<br>~~Se~~<br>~~a~~|Reverse Recovery Charge<br>~~ened~~<br>~~es~~|–––<br>~~ss~~<br>ee<br>ee|36<br>~~ss~~<br>eee<br>ee|54<br>ees|nC<br>ee||



Repetitive rating;  pulse width limited by max. junction temperature. 0) Pulse width ≤ 400µs : duty cycle ≤ 2%. 

Surface mounted on FR-4 board, ≤ 10sec 

www.irf.com 

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100 100<br>VGS VGS<br>TOP          -10.0V TOP          -10.0V<br>                  -5.0V                   -5.0V<br>                  -4.5V                   -4.5V<br>                  -4.0V                   -4.0V<br>Y | A                   -3.5V | Lt                   -3.5V |<br>10                   -3.3V                  -3.0V 10                   -3.3V                  -3.0V<br>BOTTOM   -2.7V BOTTOM   -2.7V<br>Oe it Or n<br>| -2.7V il<br>1  e o 1 pauline Mail<br>AI 24 NN<br>-2.7V<br>20µs PULSE WIDTH<br>20µs PULSE WIDTH<br>Tj = 150°C<br>0.1 titA TH Tj = 25°C a uP HH 0.1 PHCELUI aulCUT<br>0.1 1 10 100 0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 100 2.0<br>ID = -8.0A<br>SSS Pee ELLE<br>——— =<br>A UE EEE EEE<br>1.5<br> 10 T  = 150  CJ °<br>ne 42 PEELETr<br>S S LET ELLE |<br>S SS 1.0 LE[bees<br>— —— T  = 25  CJ ° —— TTL<br> 1<br>ae eS ——————— |<br>——— 0.5 PEELE<br>V      = -15VDS<br>ee ce ee 20µs PULSE WIDTH VGS = -10V<br>0.1 PT Et 0.0 ULEEELLEEEEE EE<br>2.0 3.0 4.0 5.0 6.0 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>-V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>D<br>-I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>-ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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**----- Start of picture text -----**<br>
4000 14<br>VGS = 0V, f = 1MHz ID = -8A<br>CCCissrssoss === CCCgsgdds + C+ Cgd ,gd C      SHORTEDds 12 VVDSDS==-24V-15V<br>3000<br>—_—— Ciss EE 10 REE EE E ERE<br>Co o HH III SaSSSS5887 48<br>8<br>a|<br>2000<br>6<br>a | pteP| At<br>a 4 tt | PAA<br>1000<br>ll PE A<br>Coss<br>2<br>a Crss AE<br>0 o e LL 0 7 EEE EEE<br> 1  10  100 0 10 20 30 40 50 60<br>-V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100  1000<br>OPERATION IN THIS AREA LIMITED<br>BY R<br>DS(on)<br>T  = 150  CJ °<br>Pr RAT e e<br> 10 Ar tt  100 a<br>T  = 25  CJ °<br>FPP EEL PATTE M<br>100us<br> 1 P O)  10 SC LPM sot LL<br>SS ll<br>1ms<br> T TCJ = 25  C= 150  C° ° 10ms<br>0.1 FAERPE UE TEE EEIE V      = 0 V GS  1 a  Single Pulse 1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1  1  10  100<br>-V     ,Source-to-Drain Voltage (V)SD -V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D-<br>SD<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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10.0 PET ET | EE Vos Ro<br>8.0<br>CEPEP EEE eo<br>PE ro | _ -<br>+<br>6.0<br>P| PN EL Yoo<br>PT ET ENE EL Ves<br>≤ 1<br>≤ 0.1 %<br>4.0<br>OY eel<br>Fig 10a.   Switching Time Test Circuit<br>2.0 Pt Et yt [EEA] q<br>td(on) tr td(off) tf<br>COCEeeeey VGS oe<br>0.0 PE TT te TE 10% na |<br>25 50 75 100 125 150<br>T   , Case TemperatureTCA (  C)°<br>90% \ / |<br>Fig 9.   Maximum Drain Current Vs. VDS<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 1000<br>Pe te I TT<br> 100 ttt<br>D = 0.50<br>0.20<br>a rcs A |<br> 10<br>0.10<br>0.05 PDM<br>0.02 Sn —| t1<br> 1 a 0.01 t2<br>SINGLE PULSE<br>(THERMAL RESPONSE) Notes:<br>1. Duty factor D = t   / t1 2<br>a 2. Peak TJ = P DM x  ZthJA + TA<br>0.1<br>0.0001 0.001 0.01 0.1  1  10  100  1000<br>t  , Rectangular Pulse Duration (sec)1<br>D<br>-I   , Drain Current (A)<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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**----- Start of picture text -----**<br>
0.060 0.100<br>0.050<br>PP I E<br>0.075<br>REO TT. 1 .<br>0.040<br>0.030 PVppt ID = -8.0A Le 0.050 TI TE L<br>VGS = -4.5V<br>0.020 PRET = | fy” ai n<br>0.025 VGS = -10V<br>0.010 Pf SS |<br>0.000 Pt |ttt eterety 0.000 eePE EET Ey<br>3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0 10 20 30 40 50 60 70<br>-VGS, Gate -to -Source Voltage  (V) -ID , Drain Current ( A )<br> )<br>) Ω RDS ( on ) , Drain-to-Source On Resistance (<br>Ω RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 12.** Typical On-Resistance Vs. Gate Voltage 

**Fig 13.** Typical On-Resistance Vs. Drain Current 

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**----- Start of picture text -----**<br>
Current Regulator<br>Same Type as D.U.T.<br>50K Ω<br>12V .2 µ F<br>QG .3 µ F<br>O o THe) D.U.T. | +-VDS<br>QGS QGD<br>VGS<br>i _ (ny<br>VG -3mA<br>Ont.<br>IG ID<br>Current Sampling Resistors<br>Charge<br>**----- End of picture text -----**<br>


**Fig 14a.** Basic Gate Charge Waveform 

**Fig 14b.** Gate Charge Test Circuit 

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## SO-8  Package Outline 

Dimensions are shown in milimeters (inches) 

**==> picture [313 x 291] intentionally omitted <==**

**----- Start of picture text -----**<br>
INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 | A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>an a a b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>i E 6 — 0.25 [.010] H A ——ee DE .189.1497 .1968.1574 4.803.80 5.004.00<br>1 2 3 4<br>e .050  BASIC 1.27  BASIC<br>e1 .025  BASIC 0.635  BASIC<br>H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X oh e — _ eeoo L .016 .050 0.40 1.27<br>y  0°  8°  0°  8°<br>es<br>- e1 A K x 45°<br>C<br>θ y<br>0.10 [.004]<br>HARES am 8X b A1 yl ( f 8X L n 8X c<br>0.25 [.010]  C A B 0 7<br>FOOTPRINT<br>NOTES:<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER VT<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>: 6.46 [.255] j [oad]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>0      MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. ii<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>     A SUBSTRATE.<br>O 3X 1.27 [.050] 000 8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## SO-8 Part Marking Information (Lead-Free) 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

**==> picture [187 x 84] intentionally omitted <==**

**----- Start of picture text -----**<br>
ron" XXXX<br>INTERNATIONAL F7101<br>RECTIFIER<br>LOGO<br>me<br>**----- End of picture text -----**<br>


DATE CODE (YWW) P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y =  LAST DIGIT OF THE YEAR WW =  WEEK A =  ASSEMBLY SITE CODE LOT CODE 

PART NUMBER 

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## SO-8 Tape and Reel 

Dimensions are shown in milimeters (inches) 

**==> picture [206 x 324] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>OO oO 6<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) ae FEED DIRECTION<br>|  330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/2010 

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---

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